CN103631283B - Semiconductor device, method for controlling temperature thereof, and test system - Google Patents
Semiconductor device, method for controlling temperature thereof, and test system Download PDFInfo
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Abstract
Description
技术领域 technical field
本发明涉及一种半导体装置及其温度控制方法以及测试系统。The invention relates to a semiconductor device, its temperature control method and a testing system.
背景技术 Background technique
在生产半导体装置的产品的过程中，通常需要在多个不同的温度进行各项功能测试，例如温度条件为45℃、85℃、95℃、105℃或125℃。现有技术对于不同温度的测试条件，常通过增加测试站来提供所需的测试温度。然而，这种增加测试站的做法需要更大的空间来容置测试机台，且会大幅度地增加生产成本，并且在测试站之间运送产品时会拉长测试时间。In the process of producing semiconductor devices, it is usually necessary to perform various functional tests at different temperatures, for example, the temperature conditions are 45°C, 85°C, 95°C, 105°C or 125°C. In the prior art, for test conditions at different temperatures, the required test temperature is often provided by adding test stations. However, this method of adding test stations requires a larger space for accommodating test machines, and greatly increases production costs, and prolongs test time when products are transported between test stations.
发明内容 Contents of the invention
有鉴于此，本发明的目的在于提出一种半导体装置及其温度控制方法以及测试系统，藉以解决现有技术所述及的问题。In view of this, the object of the present invention is to provide a semiconductor device and its temperature control method and testing system, so as to solve the problems mentioned in the prior art.
本发明提出一种半导体装置，其包括至少一温度控制单元以及至少一加热单元。温度控制单元用以反应于半导体装置外部的一外部控制信号而运作。加热单元耦接温度控制单元。温度控制单元反应于外部控制信号的第一指令信号而控制加热单元的温度，据以从第一工作温度升温至第二工作温度。The invention provides a semiconductor device, which includes at least one temperature control unit and at least one heating unit. The temperature control unit operates in response to an external control signal outside the semiconductor device. The heating unit is coupled to the temperature control unit. The temperature control unit controls the temperature of the heating unit in response to the first instruction signal of the external control signal, so as to raise the temperature from the first working temperature to the second working temperature.
在本发明的一实施例中，当温度控制单元接收到来自外部控制信号的第二指令信号时，温度控制单元反应于第二指令信号而控制加热单元的温度，据以从第二工作温度升温至第三工作温度。In one embodiment of the present invention, when the temperature control unit receives the second instruction signal from the external control signal, the temperature control unit controls the temperature of the heating unit in response to the second instruction signal, so as to raise the temperature from the second working temperature to the third working temperature.
在本发明的一实施例中，半导体装置还包括逻辑控制单元。逻辑控制单元耦接温度控制单元。逻辑控制单元根据各个温度控制单元的反馈结果，于达到第二工作温度时传送第一反馈信号，还可于达到第三工作温度时传送第二反馈信号。In an embodiment of the present invention, the semiconductor device further includes a logic control unit. The logic control unit is coupled to the temperature control unit. The logic control unit sends the first feedback signal when the second working temperature is reached according to the feedback results of each temperature control unit, and also sends the second feedback signal when the third working temperature is reached.
本发明另提出一种半导体装置的温度控制方法，其包括以下步骤。提供测试机台以控制半导体装置的运作。测试机台传送第一指令信号至半导体装置的温度控制单元。温度控制单元反应于第一指令信号而控制半导体装置的加热单元的温度，据以从第一工作温度升温至第二工作温度。The present invention further provides a temperature control method for a semiconductor device, which includes the following steps. Provide test equipment to control the operation of semiconductor devices. The testing machine transmits the first instruction signal to the temperature control unit of the semiconductor device. The temperature control unit controls the temperature of the heating unit of the semiconductor device in response to the first command signal, so as to raise the temperature from the first working temperature to the second working temperature.
本发明另提出一种测试系统。测试系统包括测试机台以及半导体装置。半导体装置包括至少一温度控制单元以及至少一加热单元。温度控制单元用以反应于测试机台的控制而运作。加热单元耦接温度控制单元。温度控制单元反应于测试机台的第一指令信号而控制加热单元的温度，据以从第一工作温度升温至第二工作温度。The invention also provides a testing system. The test system includes a test machine and a semiconductor device. The semiconductor device includes at least one temperature control unit and at least one heating unit. The temperature control unit operates in response to the control of the testing machine. The heating unit is coupled to the temperature control unit. The temperature control unit controls the temperature of the heating unit in response to the first command signal of the test machine, so as to raise the temperature from the first working temperature to the second working temperature.
本发明的有益效果在于，基于上述，本发明的半导体装置内配置了加热单元，当测试特定的温度时，可控制半导体装置内的加热单元的温度，以在特定的温度进行功能测试，从而减少测试站的数量与所需的测试空间。The beneficial effect of the present invention is that, based on the above, a heating unit is arranged in the semiconductor device of the present invention. When testing a specific temperature, the temperature of the heating unit in the semiconductor device can be controlled to perform a functional test at a specific temperature, thereby reducing Number of test stations vs. required test space.
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.
附图说明 Description of drawings
下面的附图是本发明的说明书的一部分，绘示了本发明的示例实施例，附图与说明书的描述一起说明本发明的原理。The accompanying drawings, which form a part of the specification of the invention, illustrate example embodiments of the invention and together with the description explain the principles of the invention.
图1是依照本发明一实施例的测试系统的示意图。FIG. 1 is a schematic diagram of a testing system according to an embodiment of the invention.
图2是依照本发明一实施例的测试温度的示意图。FIG. 2 is a schematic diagram of test temperatures according to an embodiment of the present invention.
图3是依照本发明一实施例的测试流程图。FIG. 3 is a test flow chart according to an embodiment of the present invention.
图4是依照本发明另一实施例的测试系统的示意图。FIG. 4 is a schematic diagram of a test system according to another embodiment of the present invention.
图5是依照本发明一实施例的半导体装置的温度控制方法的流程图。FIG. 5 is a flowchart of a temperature control method for a semiconductor device according to an embodiment of the invention.
其中，附图标记说明如下：Wherein, the reference signs are explained as follows:
100A、100B：测试系统100A, 100B: Test system
110：测试机台110: Test machine
120、120A：半导体装置120, 120A: Semiconductor device
130、130A、130B：温度控制单元130, 130A, 130B: temperature control unit
140_1、140_2、140A_1、140A_n、140B_1、140B_m：加热单元140_1, 140_2, 140A_1, 140A_n, 140B_1, 140B_m: heating unit
150：逻辑控制单元150: Logic Control Unit
A0~A6：测试区间A0~A6: Test interval
CS：校正信号CS: correction signal
ES1、ES2：致能信号ES1, ES2: enable signal
FBS1、FBS2：反馈信号FBS1, FBS2: feedback signal
F0：室温F0: room temperature
F1、F2、F3：工作温度F1, F2, F3: working temperature
S310～S360：本发明一实施例的测试流程的各步骤S310～S360: each step of the test flow in an embodiment of the present invention
S510～S550：本发明一实施例的半导体装置的温度控制方法的各步骤S510-S550: each step of the temperature control method of a semiconductor device according to an embodiment of the present invention
T1~T7：时间点T1~T7: time point
具体实施方式 Detailed ways
现将详细参考本发明的实施例，并在附图中说明所述实施例。然而，本发明概念可以许多不同形式体现且不应被解释为限于本文中所阐述的实施例。另外，在附图及实施方式中使用相同标号的元件/构件代表相同或类似部分。Reference will now be made in detail to embodiments of the invention, which are illustrated in the accompanying drawings. However, inventive concepts may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In addition, elements/members using the same reference numerals in the drawings and embodiments represent the same or similar parts.
图1是依照本发明一实施例的测试系统的示意图。图2是依照本发明一实施例的测试温度的示意图。图3是依照本发明一实施例的测试流程图。请合并参阅图1、图2和图3。测试系统100A包括测试机台110以及半导体装置120。待测试的半导体装置120包括温度控制单元130以及加热单元140_1、140_2。测试机台110用以测试半导体装置120的各项功能。而半导体装置120可以为集成电路的芯片或是封装体。加热单元140_1、140_2耦接温度控制单元130。请注意，本发明不限制温度控制单元或加热单元的数量。FIG. 1 is a schematic diagram of a testing system according to an embodiment of the invention. FIG. 2 is a schematic diagram of test temperatures according to an embodiment of the present invention. FIG. 3 is a test flow chart according to an embodiment of the present invention. Please refer to Figure 1, Figure 2 and Figure 3 combined. The test system 100A includes a test machine 110 and a semiconductor device 120 . The semiconductor device 120 to be tested includes a temperature control unit 130 and heating units 140_1 , 140_2 . The testing machine 110 is used for testing various functions of the semiconductor device 120 . The semiconductor device 120 may be a chip or a package of an integrated circuit. The heating units 140_1 and 140_2 are coupled to the temperature control unit 130 . Note that the present invention does not limit the number of temperature control units or heating units.
在图2中，假设温度F0为室温，测试的温度条件可以为工作温度F1和F2，或者再增加一工作温度F3，或者是类似地再增加其他的工作温度。而测试区间A0至A6表示不同时间点之间的区间。请注意，工作温度F3大于工作温度F2，且工作温度F2大于工作温度F1。In Fig. 2, assuming that the temperature F0 is room temperature, the temperature conditions of the test can be operating temperatures F1 and F2, or an additional operating temperature F3, or similarly increase other operating temperatures. The test intervals A0 to A6 represent intervals between different time points. Please note that the operating temperature F3 is greater than the operating temperature F2, and the operating temperature F2 is greater than the operating temperature F1.
在测试区间A0，半导体装置120在测试机台110外面。In the test area A0 , the semiconductor device 120 is outside the test machine 110 .
如步骤S310所示，在时间点T1，开始进入测试区间A1。半导体装置120被载入测试机台110且测试机台110本身的加热器开始升温。而在时间点T2表示已经达到工作温度F1（例如，85℃）。As shown in step S310 , at time point T1 , the test interval A1 starts to be entered. The semiconductor device 120 is loaded into the test machine 110 and the heater of the test machine 110 itself starts to heat up. And at time point T2 it means that the working temperature F1 (for example, 85° C.) has been reached.
如步骤S320所示，在测试区间A2（时间点T2至T3），半导体装置120处于工作温度F1，测试机台110可以对半导体装置120进行第一阶段的各项功能测试。As shown in step S320 , in the test interval A2 (time point T2 to T3 ), the semiconductor device 120 is at the working temperature F1 , and the testing machine 110 can perform various functional tests on the semiconductor device 120 in the first stage.
如步骤S330所示，在时间点T3，测试机台110可以传送致能信号ES1至半导体装置120（或是将具有致能信号ES1的外部控制信号传送至半导体装置120）。此时，半导体装置120的温度控制单元130反应于测试机台110（或外部控制信号）的控制，而根据致能信号ES1控制加热单元140_1、140_2的温度，据以使半导体装置120的本身温度从工作温度F1（例如，85℃）升温至工作温度F2（例如，105℃）。As shown in step S330 , at the time point T3 , the testing machine 110 may transmit the enable signal ES1 to the semiconductor device 120 (or transmit an external control signal having the enable signal ES1 to the semiconductor device 120 ). At this time, the temperature control unit 130 of the semiconductor device 120 responds to the control of the test machine 110 (or the external control signal), and controls the temperature of the heating units 140_1 and 140_2 according to the enable signal ES1, so that the temperature of the semiconductor device 120 itself The temperature is raised from the working temperature F1 (for example, 85° C.) to the working temperature F2 (for example, 105° C.).
另外，温度控制单元130可以检测加热单元140_1和140_2的升温情形，在达到工作温度F2的时间点T4，传送反馈信号FBS1至测试机台110，以使测试机台110得知目前半导体装置120的平均工作温度。In addition, the temperature control unit 130 can detect the temperature rise of the heating units 140_1 and 140_2, and transmit the feedback signal FBS1 to the test machine 110 at the time point T4 when the working temperature F2 is reached, so that the test machine 110 can know the current temperature of the semiconductor device 120 average operating temperature.
如步骤S340所示，在测试区间A4（时间点T4至T5），半导体装置120处于工作温度F2，测试机台110可以对半导体装置120进行第二阶段的各项功能测试。As shown in step S340 , in the test interval A4 (time point T4 to T5 ), the semiconductor device 120 is at the working temperature F2 , and the test machine 110 can perform various functional tests on the semiconductor device 120 in the second stage.
在又一实施例中，倘若测试机台110欲再增加一工作温度F3的测试条件。如步骤S350所示，在时间点T5，测试机台110可以传送致能信号ES2至半导体装置120（或是将具有致能信号ES2的外部控制信号传送至半导体装置120）。此时，半导体装置120的温度控制单元130反应于测试机台110（或外部控制信号）的控制，而根据致能信号ES2控制加热单元140_1、140_2的温度，据以使半导体装置120的本身温度从工作温度F2（例如，105℃）升温至工作温度F3（例如，125℃）。In yet another embodiment, if the test machine 110 wants to add a test condition of working temperature F3. As shown in step S350 , at time T5 , the testing machine 110 may transmit the enable signal ES2 to the semiconductor device 120 (or transmit the external control signal having the enable signal ES2 to the semiconductor device 120 ). At this time, the temperature control unit 130 of the semiconductor device 120 responds to the control of the test machine 110 (or the external control signal), and controls the temperature of the heating units 140_1 and 140_2 according to the enable signal ES2, so that the temperature of the semiconductor device 120 itself The temperature is raised from the working temperature F2 (for example, 105° C.) to the working temperature F3 (for example, 125° C.).
类似地，温度控制单元130可以检测加热单元140_1和140_2的温度，在达到工作温度F3的时间点T6，传送反馈信号FBS2至测试机台110。于是如步骤S360所示，在测试区间A6（时间点T6至T7），半导体装置120处于工作温度F3，测试机台110可以对半导体装置120进行第三阶段的各项功能测试。Similarly, the temperature control unit 130 can detect the temperature of the heating units 140_1 and 140_2 , and transmit the feedback signal FBS2 to the testing machine 110 at the time point T6 when the working temperature F3 is reached. Then, as shown in step S360 , in the test interval A6 (time point T6 to T7 ), the semiconductor device 120 is at the working temperature F3 , and the testing machine 110 can perform various functional tests on the semiconductor device 120 in the third stage.
另外，测试区间A2（时间点T2至T3），测试机台110可传送一校正信号CS，而温度控制单元130根据校正信号CS对半导体装置120进行工作温度F1的温度校正。例如，校正信号CS表示测试机台已经升温而达到温度85℃，所以温度控制单元130需将目前检测到半导体装置120的温度同步校正为85℃。请注意，本发明的校正温度数值不以此实施例所列举的数值为限。In addition, during the test period A2 (time point T2 to T3), the test machine 110 may transmit a correction signal CS, and the temperature control unit 130 performs temperature correction on the operating temperature F1 of the semiconductor device 120 according to the correction signal CS. For example, the correction signal CS indicates that the temperature of the testing machine has risen to 85° C., so the temperature control unit 130 needs to synchronously correct the currently detected temperature of the semiconductor device 120 to 85° C. Please note that the corrected temperature values of the present invention are not limited to the values listed in this embodiment.
另外，加热单元140_1、140_2可以为电阻、金属导线或其他的耗电元件所组成的电路，而温度控制单元130利用电流流量来控制加热单元140_1、140_2的温度范围。In addition, the heating units 140_1 and 140_2 can be circuits composed of resistors, metal wires or other power-consuming elements, and the temperature control unit 130 uses current flow to control the temperature range of the heating units 140_1 and 140_2 .
图4是依照本发明另一实施例的测试系统的示意图。请参阅图2和图4。测试系统100B包括测试机台110以及半导体装置120A。而测试系统100B类似于图1的测试系统100A的架构。半导体装置120A包括逻辑控制单元150、温度控制单元130A、130B、加热单元140A_1、…、140A_n以及加热单元140B_1、…、140B_m。运用多个加热单元可以使半导体装置120A的升温受热更为平均。FIG. 4 is a schematic diagram of a test system according to another embodiment of the present invention. Please refer to Figure 2 and Figure 4. The test system 100B includes a test machine 110 and a semiconductor device 120A. The architecture of the test system 100B is similar to that of the test system 100A in FIG. 1 . The semiconductor device 120A includes a logic control unit 150 , temperature control units 130A, 130B, heating units 140A_1 , . . . , 140A_n, and heating units 140B_1 , . . . , 140B_m. Using a plurality of heating units can make the heating of the semiconductor device 120A more uniform.
逻辑控制单元150耦接温度控制单元130A和130B。温度控制单元130A可以检测加热单元140A_1、…、140A_n的升温情形，而温度控制单元130B可以检测加热单元140B_1、…、140B_m的升温情形，并且温度控制单元130A和130B将温度检测的反馈结果传送至逻辑控制单元150。The logic control unit 150 is coupled to the temperature control units 130A and 130B. The temperature control unit 130A can detect the temperature rise of the heating units 140A_1, . . . , 140A_n, and the temperature control unit 130B can detect the temperature rise of the heating units 140B_1, . logic control unit 150 .
在此实施例中，反馈信号FBS1或FBS2可以通过逻辑控制单元150来传送至测试机台110。逻辑控制单元150可以包括与门的电路（未绘示），其中与门的各输入端分别接收温度控制单元130A、130B的反馈结果，而与门的输出端用以输出反馈信号FBS1或FBS2。于是，逻辑控制单元150可以根据温度控制单元130A和130B的反馈结果，于达到工作温度F2时传送反馈信号FBS1至测试机台110。并且，逻辑控制单元150可以在达到工作温度F3时，传送反馈信号FBS2至测试机台110，以使测试机台110得知目前半导体装置120的平均工作温度。In this embodiment, the feedback signal FBS1 or FBS2 can be transmitted to the test machine 110 through the logic control unit 150 . The logic control unit 150 may include an AND gate circuit (not shown), wherein each input terminal of the AND gate receives feedback results from the temperature control units 130A and 130B respectively, and the output terminal of the AND gate is used to output the feedback signal FBS1 or FBS2 . Therefore, the logic control unit 150 can transmit the feedback signal FBS1 to the test machine 110 when the working temperature F2 is reached according to the feedback results of the temperature control units 130A and 130B. Moreover, the logic control unit 150 may send a feedback signal FBS2 to the testing machine 110 when the working temperature F3 is reached, so that the testing machine 110 can know the current average working temperature of the semiconductor device 120 .
基于上述实施例所揭示的内容，可以汇整出一种通用的半导体装置的温度控制方法。更清楚来说，图5绘示为本发明一实施例的半导体装置的温度控制方法的流程图。请合并参阅图1和图5，本实施例的温度控制方法可以包括以下步骤。Based on the contents disclosed in the above embodiments, a general method for controlling the temperature of a semiconductor device can be compiled. To be more clear, FIG. 5 is a flowchart of a temperature control method for a semiconductor device according to an embodiment of the present invention. Please refer to FIG. 1 and FIG. 5 together, the temperature control method of this embodiment may include the following steps.
如步骤S510所示，提供测试机台110以控制半导体装置120的运作。As shown in step S510 , a testing machine 110 is provided to control the operation of the semiconductor device 120 .
接着如步骤S520所示，测试机台110传送致能信号ES1至半导体装置120的温度控制单元130。Next, as shown in step S520 , the test machine 110 transmits the enable signal ES1 to the temperature control unit 130 of the semiconductor device 120 .
然后，如步骤S530所示，温度控制单元130反应于致能信号ES1而控制半导体装置120的加热单元140_1、140_2的温度，据以从第一工作温度升温至第二工作温度。Then, as shown in step S530 , the temperature control unit 130 controls the temperature of the heating units 140_1 and 140_2 of the semiconductor device 120 in response to the enable signal ES1 , so as to raise the temperature from the first working temperature to the second working temperature.
在又一示范性实施例中，在步骤S540时，测试机台110传送致能信号ES2至半导体装置120的温度控制单元130。然后，如步骤S550所示，温度控制单元130反应于致能信号ES2而控制半导体装置120的加热单元140_1、140_2的温度，据以从第二工作温度升温至第三工作温度。In yet another exemplary embodiment, at step S540 , the test machine 110 transmits the enable signal ES2 to the temperature control unit 130 of the semiconductor device 120 . Then, as shown in step S550 , the temperature control unit 130 controls the temperature of the heating units 140_1 and 140_2 of the semiconductor device 120 in response to the enable signal ES2 , so as to raise the temperature from the second working temperature to the third working temperature.
请注意，第三工作温度（例如，95℃）大于第二工作温度（例如，85℃），且第二工作温度大于第一工作温度（例如，45℃）。Please note that the third operating temperature (eg, 95°C) is greater than the second operating temperature (eg, 85°C), and the second operating temperature is greater than the first operating temperature (eg, 45°C).
综上所述，本发明在待测试的半导体装置内配置了至少一个加热单元，当测试特定的温度时，可通过半导体装置内的加热单元控制温度，以在特定的温度进行功能测试，从而可在同一测试机台进行两种以上的温度测试，而且有效地减少测试站的数量与所需的测试空间。In summary, the present invention configures at least one heating unit in the semiconductor device to be tested. When testing a specific temperature, the temperature can be controlled by the heating unit in the semiconductor device to perform a functional test at a specific temperature. Perform more than two temperature tests on the same test machine, and effectively reduce the number of test stations and the required test space.
虽然本发明已以实施例揭露如上，然其并非用以限定本发明，任何所属技术领域中的技术人员，在不脱离本发明的精神和范围内，当可作些许更动与润饰，故本发明的保护范围当视权利要求书所界定者为准。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention should be defined by the claims.
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