CN103618018A - Novel solar cell and preparation method - Google Patents

Abstract

The invention discloses a novel solar cell and a manufacturing method of the novel solar cell. Wherein, the novel solar cell includes at least one first battery power generation layer and at least one second battery power generation layer, the first battery power generation layer and the second battery power generation layer are stacked together; the first battery power generation layer at the corresponding position Adjacent to the power generation layer of the second battery and connected in series, the first battery is a silicon-based thin-film solar battery, and the second battery is a copper indium gallium selenide solar battery. The copper indium gallium selenide solar cell has high light absorption rate and photoelectric conversion efficiency, and can be used to improve the conversion efficiency of the new solar cell.

Description

Novel solar cell and manufacturing method thereof

technical field

The invention relates to a new energy field, in particular to a new solar cell and a manufacturing method of the solar cell.

Background technique

At present, among many solar cells with different technologies, silicon-based thin-film solar cells occupy the market share of photovoltaic thin-film solar cells due to their abundant raw material reserves, non-toxic, non-polluting, simple process, low cost and large-scale production. getting bigger. However, at the technical level, amorphous silicon and silicon-germanium alloy cells face a situation of large light-induced attenuation and low conversion efficiency. Therefore, how to make technological breakthroughs has become the key to the development of silicon-based thin film batteries. The absorption of light by amorphous silicon single-junction cells and amorphous silicon-germanium stacked cells is limited to 300-800 and 300-900nm respectively, and amorphous silicon-germanium stacked cells transmit about 60% of light in the 600-1500nm band , The loss of 900-1300nm long-wavelength light is one of the reasons for the low efficiency of amorphous silicon and silicon germanium cells. Fully absorbing and utilizing this long-wavelength light is an effective way to improve the conversion efficiency of silicon-based thin-film cells.

Contents of the invention

The invention provides a novel solar cell to solve the problem of low conversion efficiency of the existing silicon-based thin film solar cells.

The invention additionally provides a manufacturing method of a novel solar cell to solve the problem of low conversion efficiency of the existing silicon-based thin-film solar cell.

The present invention provides a novel solar cell, comprising at least one first battery power generation layer and at least one second battery power generation layer, the first battery power generation layer and the second battery power generation layer are stacked together; the first battery power generation layer at the corresponding position The battery power generation layer is adjacent to and connected in series with the second battery power generation layer, the first battery is a silicon-based thin-film solar battery, and the second battery is a copper indium gallium selenide solar battery.

Preferably, the silicon-based thin film solar cell is an amorphous silicon and/or amorphous silicon germanium thin film solar cell.

Optionally, the silicon-based thin-film solar cell includes a semiconductor layer, which is a power generation layer of the silicon-based thin-film solar cell. Wherein, the amorphous silicon thin film solar cell has at least one amorphous silicon semiconductor layer, the amorphous silicon germanium thin film solar cell has at least one amorphous silicon germanium semiconductor layer, and the amorphous silicon and amorphous silicon germanium stack The thin film solar cell has at least one amorphous silicon semiconductor layer and at least one amorphous silicon germanium semiconductor layer, and the amorphous silicon semiconductor layer is adjacent to the amorphous silicon germanium semiconductor layer.

Preferably, the first battery power generation layer is connected in series with the second battery power generation layer, specifically, the positive electrode extended from the first battery power generation layer is connected to the negative electrode extended from the second battery power generation layer, or the first battery power generation layer The extended negative electrode is connected to the positive electrode extended from the power generation layer of the second battery.

Preferably, the first battery power generation layer is connected in series with the second battery power generation layer, specifically, the first battery power generation layer is formed on the second battery power generation layer by physical and/or chemical methods.

Optionally, after serial connection, the order of the film layers is the copper indium gallium selenide film layer and the semiconductor layer of the silicon-based thin film solar cell.

Optionally, the order of the film layers after serial connection is the copper indium gallium selenide film layer, the transition layer and the semiconductor layer of the silicon-based thin film solar cell.

Optionally, the transition layer is a silicon oxide film layer.

Preferably, the thickness range of the novel solar cell is greater than or equal to 100 nm and less than or equal to 450 nm.

The present invention also provides a manufacturing method of a novel solar cell, comprising: preparing a first cell, preparing a second cell, and laminating the first cell and the second cell in series. Wherein, the first cell is a silicon-based thin film solar cell, and the second cell is a copper indium gallium selenide solar cell.

Optionally, the production time sequence of the first battery and the second battery may be reversed, or the first battery and the second battery may be produced at the same time.

Optionally, radio frequency plasma enhanced chemical vapor deposition technology, hot wire chemical vapor deposition technology, high frequency plasma enhanced chemical vapor deposition technology, electron cyclotron resonance chemical vapor deposition technology or microwave plasma chemical vapor deposition technology are used in the preparation of the first battery. One or more of vapor deposition techniques.

Optionally, the preparation of the second battery adopts magnetron sputtering deposition method and co-evaporation.

The present invention also provides a method for manufacturing a novel solar cell, comprising: forming a metal molybdenum layer on a glass substrate, forming a copper indium gallium selenide film layer on the metal molybdenum layer, and forming the copper indium gallium selenide film layer on the copper indium gallium selenide film layer. The amorphous silicon and/or the amorphous silicon germanium film layer is formed on the amorphous silicon and/or the amorphous silicon germanium film layer, and the aluminum-doped zinc oxide film layer is laminated and packaged.

Preferably, the rate range of the formation of the film layer is greater than or equal to 0.1 nm/s and less than or equal to 0.5 nm/s.

Compared with the prior art, one aspect of the present invention has the following advantages: the present invention provides a novel solar cell comprising at least one first battery power generation layer and at least one second battery power generation layer, the first battery power generation layer and The power generation layers of the second battery are adjacent and connected in series, the first battery is a silicon-based thin-film solar battery, and the second battery is a copper indium gallium selenide solar battery. The copper indium gallium selenide solar cell has high light absorption rate and photoelectric conversion efficiency, thereby greatly improving the conversion efficiency of the new solar cell.

The present invention also provides a manufacturing method of a novel solar cell, comprising: preparing a first cell, preparing a second cell, and laminating the first cell and the second cell in series. Wherein, the first cell is a silicon-based thin film solar cell, and the second cell is a copper indium gallium selenide solar cell. The novel solar cell manufactured by applying the manufacturing method of the novel solar cell has relatively high photoelectric conversion efficiency.

The present invention also provides a method for manufacturing a novel solar cell, comprising: forming a metal molybdenum layer on a glass substrate; forming a copper indium gallium selenide film layer on the metal molybdenum layer; forming the copper indium gallium selenide film layer on the copper indium gallium selenide film layer. An amorphous silicon and/or amorphous silicon germanium film layer; forming an aluminum-doped zinc oxide film layer on the amorphous silicon and/or amorphous silicon germanium film layer; finally laminating and encapsulating. The manufacturing method can not only manufacture new type solar cells with high conversion rate, but also has simple steps.

Description of drawings

Fig. 1 is the structural representation of novel solar cell of the present invention;

Fig. 2 is the structural representation of novel solar cell of the present invention;

3 is a schematic diagram of the internal structure of the novel solar cell of the present invention;

4 is a schematic diagram of the internal structure of the novel solar cell of the present invention;

5 is a flow chart of a manufacturing method for an amorphous silicon single-junction silicon-based thin-film solar cell;

Fig. 6 is the manufacturing method flowchart of the silicon-based thin-film solar cell of amorphous silicon and amorphous silicon germanium lamination;

Fig. 7 is a flow chart of a manufacturing method of a copper indium gallium selenide solar cell;

Fig. 8 is a flow chart of the manufacturing method of the novel solar cell of the present invention;

Fig. 9 is a flow chart of the manufacturing method of the novel solar cell of the present invention;

Fig. 10 is a flow chart of the manufacturing method of the novel solar cell of the present invention;

Fig. 11 is a flow chart of the manufacturing method of the novel solar cell of the present invention;

Fig. 12 is a flow chart of the manufacturing method of the novel solar cell of the present invention.

Among them, 1. The first battery power generation layer, 2. The second battery power generation layer, 3. Electrodes, 4. Metal molybdenum layer, 5. Copper indium gallium selenide layer, 6. Amorphous silicon N1 layer, 7. Amorphous silicon I1 8, amorphous silicon P1 layer, 9, aluminum-doped zinc oxide layer, 10, amorphous silicon N2 layer, 11, amorphous silicon germanium I2 layer, 12, amorphous silicon P2 layer.

Detailed ways

The utility model provides a new type of solar cell, which not only has a high light absorption rate between 300nm-900nm, but also can fully absorb light in the long-wave band of 900nm-1300nm. Solar cells have high photoelectric conversion efficiency.

Embodiment one:

This example introduces a new type of solar cell. The new solar cell is constructed by external integration of solar cells. Figure 1 is a schematic diagram of the structure of the new solar cell. As shown in FIG. 1 , the new solar cell includes a first battery power generation layer 1 and a second battery power generation layer 2 , the first battery power generation layer 1 and the second battery power generation layer 2 are adjacent and connected in series. The first cell is a silicon-based thin film solar cell, and the second cell is a copper indium gallium selenide solar cell. The above series connection can be made through the series connection between the electrodes 3 extended from the power generation layer.

It should be noted that a first battery power generation layer 1 and a second battery power generation layer 2 may be provided, and the first battery power generation layer 1 and the second battery power generation layer 2 are directly connected in series.

It is also possible to set two first battery power generation layers 1 and one second battery power generation layer 2, and the second battery power generation layer 2 can be arranged between the first battery power generation layers 1, or not arranged between the first battery power generation layers. between layer 1. Wherein two adjacent power generation layers are connected in series.

By analogy, a plurality of first battery power generation layers 1 and a plurality of second battery power generation layers 2 may be provided. Two adjacent power generation layers are connected in series.

It should be noted that the first battery is a silicon-based thin-film solar cell, and the power generation layer of the silicon-based thin-film solar cell can be composed of a semiconductor layer. Specifically, on a complete semiconductor, different doping processes are used to make one side An N-type semiconductor is formed, and a P-type semiconductor is formed on the other side. An intrinsic layer I layer is set between the N-type semiconductor and the P-type semiconductor. The N-type semiconductor, P-type semiconductor and I layer together form a semiconductor layer, which is a solar cell. power generation layer. Among them, the N-type semiconductor is a semiconductor doped with a small amount of impurity phosphorus or antimony, and the P-type semiconductor is a semiconductor doped with a small amount of impurity boron or indium.

Specifically, the complete semiconductor can be amorphous silicon, and the semiconductor layer formed on the amorphous silicon by a doping process can be called an amorphous silicon semiconductor layer; correspondingly, if the complete semiconductor is amorphous silicon germanium , the semiconductor layer formed on the amorphous silicon germanium by a doping process may be referred to as an amorphous silicon germanium semiconductor layer.

The power generation layer of the solar cell may comprise the above-mentioned N-type semiconductor, P-type semiconductor and I layer together to form a semiconductor layer, and the semiconductor layer may be an amorphous silicon semiconductor layer or an amorphous silicon-germanium semiconductor layer.

The power generation layer of the solar cell can also comprise two above-mentioned N-type semiconductors, P-type semiconductors and I layer to form a semiconductor layer together, the two semiconductor layers are adjacent, and the two semiconductor layers can both be amorphous silicon semiconductors layer, that is, a laminated amorphous silicon semiconductor layer; or both semiconductor layers may be amorphous silicon germanium semiconductor layers, that is, a laminated amorphous silicon germanium semiconductor layer; or one of the two semiconductor layers is an amorphous The silicon semiconductor layer is an amorphous silicon germanium semiconductor layer, and the semiconductor layer is a laminated semiconductor layer of amorphous silicon and amorphous silicon germanium.

The power generation layer of the solar cell can also include three above-mentioned N-type semiconductors, P-type semiconductors and I layers to form a semiconductor layer together. Similarly, the semiconductor layer can be three stacked amorphous silicon semiconductor layers; or the semiconductor layer The layer is three stacked amorphous silicon germanium semiconductor layers; or the three semiconductor layers have one amorphous silicon semiconductor layer and two amorphous silicon germanium semiconductor layers, or two amorphous silicon semiconductor layers and one amorphous The silicon germanium semiconductor layer, the amorphous silicon germanium semiconductor layer may or may not be adjacent to the amorphous silicon semiconductor layer, so the semiconductor layer may be three stacked semiconductor layers of various structures.

The power generation layer of the solar cell may also include three or more of the above-mentioned N-type semiconductors, P-type semiconductors, and I layers to form a semiconductor layer together. According to the above-mentioned structural composition mode, multiple semiconductor layers may have a variety of stacked layers. The method is not described in detail here.

It should be noted that, generally, the thickness of the above-mentioned amorphous silicon thin-film solar cell with a semiconductor layer is between 100-300nm for the thickness range of the new solar cell, and the thickness of the above-mentioned solar cell stacked with amorphous silicon and amorphous silicon germanium The range is between 350-450nm.

The power generation layer of copper indium gallium selenide solar cells is a direct band gap compound semiconductor material composed of copper, indium, selenium and other metal elements, which has a higher absorption coefficient for light with longer wavelengths.

The above series connection specifically refers to the series connection of silicon-based thin-film solar cells composed of amorphous silicon or amorphous silicon germanium as the power generation layer and copper indium gallium selenide solar cells composed of copper indium gallium selenide as the power generation layer. Specifically, the silicon-based thin-film solar cell is used as the first cell, and two electrodes 3, a positive electrode and a negative electrode, can be drawn from the power generation layer of the silicon-based thin-film solar cell; the copper indium gallium selenide solar cell is used as the second cell, and the The power generation layer of the CIGS solar cell can also lead to two electrodes 3 , a positive electrode and a negative electrode. The positive electrode of the silicon-based thin-film solar cell is connected to the negative electrode of the CIGS solar cell, or the negative electrode of the silicon-based thin-film solar cell is connected to the positive electrode of the CIGS solar cell.

It should be noted that the connection between the two positive and negative electrodes can be in many ways, the two electrodes can be connected in series by wires, or the two electrodes can be connected in series by solder joints.

A new type of solar cell provided by the present invention is a silicon-based thin-film solar cell connected in series with a copper indium gallium selenium solar cell. The silicon-based thin-film solar cell has a high absorption rate for visible light, but not for long-wavelength light. Very high, the copper indium gallium selenide solar cell has a high absorption rate of light in the long wavelength range of 700-1400nm, so the series connection of these two solar cells makes up for the problem of the limited light absorption range of silicon-based thin film solar cells. The new solar cell improves the light absorption rate, thereby effectively improving the photoelectric conversion efficiency of the solar cell.

Embodiment two:

This example introduces a new type of solar cell. The new solar cell is through intrinsic integration of solar cells. Figure 2 is a schematic diagram of the structure of the new solar cell. As shown in FIG. 2 , the new solar cell includes a first battery power generation layer 1 and a second battery power generation layer 2 , and the first battery power generation layer 1 and the second battery power generation layer 2 are adjacent and connected in series. The first cell is a silicon-based thin film solar cell, and the second cell is a copper indium gallium selenide solar cell.

The structures of the silicon-based thin-film solar cell and the CIGS solar cell are the same as those described in the first embodiment.

It should be noted that the above series connection is an intrinsic series connection of two batteries. The power generation layer of the silicon-based thin-film solar cell is formed on the power generation layer of the CIGS solar cell by physical or chemical methods, or a combination of both, and the power generation layer is the semiconductor layer. The film layers of the power generation layer of the new solar cell formed can be a copper indium gallium selenide film layer and a semiconductor layer in sequence.

Specifically, the N-type semiconductor of the semiconductor layer is formed on the CIGS film layer, the P-type semiconductor is formed on the N-type semiconductor, and finally the back electrode of the new solar cell is formed on the P-type semiconductor.

In order to make the power generation layer more stable when connected in series, a transition layer is provided between the copper indium gallium selenide film layer and the semiconductor layer, and the transition layer may be a silicon oxide film layer.

The power generation layer structure of the novel solar cell can be a multi-layer stack. Specifically, the structure of the power generation layer of the new solar cell is a three-layer laminated structure of a copper indium gallium selenide film layer, a semiconductor layer and a copper indium gallium selenide film layer in sequence. Alternatively, the structure of the power generation layer of the novel solar cell is a four-layer laminated structure of a copper indium gallium selenide film layer, a semiconductor layer, a copper indium gallium selenide film layer, and a semiconductor layer. Alternatively, the structure of the power generation layer of the new solar cell is a multi-layer laminated structure in which copper indium gallium selenide film layers and semiconductor layers are alternated in sequence.

It should be noted that FIG. 3 is a schematic diagram of the internal structure of the new solar cell. The internal structure of the new solar cell is shown in Figure 3. When the silicon-based thin-film solar cell is a single-junction amorphous silicon solar cell, the film layers of the new amorphous silicon-copper indium gallium selenide integrated solar cell are as follows: 4 metal Molybdenum layer, 5 copper indium gallium selenide layer, 6 amorphous silicon N1 layer, 7 amorphous silicon I1 layer, 8 amorphous silicon P1 layer, 9 aluminum-doped zinc oxide layer. The solar cell has a conversion efficiency of 13.8%.

Fig. 4 is a schematic diagram of another internal structure of the new solar cell. When the silicon-based thin-film solar cell is a laminated solar cell of amorphous silicon and amorphous silicon germanium, the film layers of the new amorphous silicon germanium-copper indium gallium selenide integrated solar cell are as follows: 4 metal molybdenum layers, 5 copper indium gallium Selenium layer, 10 amorphous silicon N2 layer, 11 amorphous silicon germanium I2 layer, 12 amorphous silicon P2 layer, 6 amorphous silicon N1 layer, 7 amorphous silicon I1 layer, 8 amorphous silicon P1 layer, 9 aluminum doped oxide zinc layer. The solar cell has a conversion efficiency of 12.4%.

A new type of solar cell provided by the utility model adopts an internal serial connection method to form a silicon-based thin film semiconductor layer on the copper indium gallium selenide film layer. The photoelectric conversion efficiency is improved.

Embodiment three:

The present invention also provides a method for manufacturing the above-mentioned novel solar cell. Before introducing the new solar cell, the manufacturing process of silicon-based thin-film solar cell and copper indium gallium selenide solar cell is introduced first.

Fig. 5 is a flow chart of manufacturing an amorphous silicon single-junction silicon-based thin-film solar cell. As shown in FIG. 5 , the manufacturing method of the solar cell includes: S1 preparing a front electrode layer, S2 sequentially depositing an amorphous silicon P1 layer, I1 layer and N1 layer on the front electrode, and S3 depositing a back electrode layer on the N1 layer.

Specifically, a 900nm fluorine-doped silicon oxide film was prepared on a glass substrate by chemical vapor deposition as the front electrode of the battery. A 10nm amorphous silicon P1 layer, a 100nm amorphous silicon I1 layer and a 20nm amorphous silicon N1 layer were sequentially deposited on the fluorine-doped silicon oxide film by 13.56MHz plasma enhanced chemical vapor deposition, wherein the deposition process of the I1 layer can be Optimum adjustments are made via RF power, hydrogen dilution ratio or introduction of silicon oxide. A composite film of 90nm aluminum-doped zinc oxide and 100nm silver was sputtered on the N1 layer, and the composite film was used as the back electrode layer of the battery. The prepared solar cell is laminated and packaged and post-treated, and the conversion efficiency of the prepared single-junction amorphous silicon solar cell is 8.6%.

Fig. 6 is a flow chart of manufacturing a silicon-based thin-film solar cell laminated with amorphous silicon and amorphous silicon germanium. As shown in Figure 6, the manufacturing method of the solar cell includes: S4 preparing the front electrode layer, S5 sequentially depositing an amorphous silicon layer P1, I1 layer and N1 layer on the front electrode, S6 sequentially depositing amorphous silicon P2 on the N1 layer Layer, amorphous silicon germanium I2 layer and amorphous silicon N2 layer, S7 deposits a back electrode layer on the N2 layer.

Specifically, a 900nm fluorine-doped silicon oxide film was prepared on a glass substrate by chemical vapor deposition as the front electrode of the battery. On the fluorine-doped silicon oxide film, a 10nm amorphous silicon P1 layer, a 100nm amorphous silicon I1 layer, and a 20nm amorphous silicon N1 layer were sequentially deposited by 13.56MHz plasma-enhanced chemical vapor deposition; Silicon P2 layer; continue to deposit 200nm amorphous silicon germanium I2 layer and 20nm amorphous silicon N2 layer on the amorphous silicon P2 layer, wherein the deposition process of amorphous silicon germanium I2 layer can be diluted by radio frequency power, hydrogen or introduced Silicon oxide is optimized and adjusted; then 90nm aluminum-doped zinc oxide and 100nm silver composite film are sputtered on the amorphous silicon N2 layer, and the composite film is used as the back electrode layer of the battery; the prepared battery is laminated and packaged and post-treated , the conversion efficiency of the prepared amorphous silicon and amorphous silicon germanium laminated cells is 7.2%.

Fig. 7 is a flow chart of manufacturing a CIGS solar cell. As shown in FIG. 7 , the manufacturing method of the solar cell includes: S8 preparing a back electrode, S9 depositing a copper indium gallium selenide film layer, S10 sputtering a cadmium sulfide layer, and finally, S11 sputtering aluminum-doped zinc oxide.

Specifically, a 100nm metal molybdenum layer was deposited on a glass substrate or a stainless steel substrate by magnetron sputtering as the back electrode layer of the battery; a 2 μm copper indium gallium selenide film layer was deposited on the back electrode layer by a co-evaporation method, and then magnetic Controlled sputtering of 10nm cadmium sulfide layer, and then sputtering 60nm aluminum-doped zinc oxide on it, the aluminum-doped zinc oxide is used as the light-receiving surface of the battery, and the prepared battery is laminated and packaged. The conversion efficiency of the prepared CIGS solar cell is 13.6%.

Fig. 8 is a flow chart of the manufacturing method of the novel solar cell of the present invention. As shown in Fig. 6, the manufacturing method includes: S12 preparing the first battery, S13 preparing the second battery, S14 combining the first battery with the second The cells are laminated in series.

Wherein, the first cell is a silicon-based thin film solar cell, and the second cell is a copper indium gallium selenide solar cell. Chronological sequence and swapping of the first battery and the second battery, or the first battery and the second battery can be made simultaneously.

It should be noted that, when the silicon-based thin-film solar cell is an amorphous silicon single-junction silicon-based thin-film solar cell, as shown in FIG. It is as follows: S15 prepares an amorphous silicon single-junction silicon-based thin-film solar cell, S16 prepares a copper indium gallium selenide solar cell, and S17 connects the above two solar cells in series.

Specifically, a 900nm fluorine-doped silicon oxide film is prepared on a glass substrate by chemical vapor deposition as the front electrode of the battery. A 10nm amorphous silicon P1 layer, a 100nm amorphous silicon I1 layer and a 20nm amorphous silicon N1 layer were sequentially deposited on the fluorine-doped silicon oxide film by 13.56MHz plasma enhanced chemical vapor deposition, wherein the deposition process of the I1 layer can be Optimum adjustments are made via RF power, hydrogen dilution ratio or introduction of silicon oxide. Then sputter 600nm aluminum-doped zinc oxide on the N1 layer as the back electrode layer. On another same glass substrate, a 100nm metal molybdenum layer was deposited by magnetron sputtering as the back electrode layer of the battery; a 2 μm copper indium gallium selenide film layer was deposited on the back electrode layer by co-evaporation, followed by magnetron sputtering Sputter 10nm cadmium sulfide layer, and then sputter 60nm aluminum-doped zinc oxide on it, the aluminum-doped zinc oxide is used as the light-receiving surface of the battery, and the prepared battery is laminated and packaged. The prepared copper indium gallium selenide solar cell was laminated and packaged in series with the previously prepared single-junction amorphous silicon solar cell, and the conversion efficiency of the prepared single-junction amorphous silicon-copper indium gallium selenide integrated solar cell was 13.8%.

When the silicon-based thin-film solar cell is an amorphous silicon and amorphous silicon-germanium laminated silicon-based thin-film solar cell, as shown in Figure 10 is a flow chart of the manufacturing method of the new solar cell, the specific manufacturing method of the new solar cell The process is as follows: S18 prepares amorphous silicon and amorphous silicon germanium silicon-based thin-film solar cells, S19 prepares copper indium gallium selenide solar cells, and S20 connects the above two solar cells in series.

Specifically, a 900nm fluorine-doped silicon oxide film was prepared on a glass substrate by chemical vapor deposition as the front electrode of the battery. On the fluorine-doped silicon oxide film, a 10nm amorphous silicon P1 layer, a 100nm amorphous silicon I1 layer, and a 20nm amorphous silicon N1 layer were sequentially deposited by 13.56MHz plasma-enhanced chemical vapor deposition; Silicon P2 layer, continue to deposit 200nm amorphous silicon germanium I2 layer and 20nm amorphous silicon N2 layer on the amorphous silicon P2 layer, wherein the deposition process of amorphous silicon germanium I2 layer can be diluted by radio frequency power, hydrogen or introduced Silicon oxide is optimized and adjusted, and then 600nm aluminum-doped zinc oxide is sputtered on the amorphous silicon N2 layer as the back electrode layer. On another same glass substrate, a 100nm metal molybdenum layer was deposited by magnetron sputtering as the back electrode layer of the battery; a 2 μm copper indium gallium selenide film layer was deposited on the back electrode layer by co-evaporation, followed by magnetron sputtering Sputter 10nm cadmium sulfide layer, and then sputter 60nm aluminum-doped zinc oxide on it, the aluminum-doped zinc oxide is used as the light-receiving surface of the battery, and the prepared battery is laminated and packaged. The prepared copper indium gallium selenide solar cell is laminated and packaged in series with the previously prepared amorphous silicon and amorphous silicon germanium silicon based thin film solar cells, and the conversion efficiency of the prepared amorphous silicon germanium-copper indium gallium selenide integrated solar cell is was 12.4%.

Embodiment four:

The present invention also provides a method for manufacturing a novel solar cell. FIG. 11 is a flow chart of the manufacturing method. As shown in FIG. 11 , when the power generation layer of a silicon-based thin-film solar cell is an amorphous silicon film layer, the manufacturing method includes: S21 forms a metal molybdenum layer on the glass substrate; S22 forms a copper indium gallium selenide film layer on the metal molybdenum layer; S23 forms the amorphous silicon film layer on the copper indium gallium selenide film layer; S24 forms the amorphous silicon film layer on the Aluminum-doped zinc oxide film layer is formed on the film layer; S25 laminate package.

Specifically, a layer of 100nm metal molybdenum layer is sputtered on the glass substrate 1 by magnetron sputtering; then a 2 μm copper indium gallium selenide film layer is deposited on the metal molybdenum layer by co-evaporation method; A 13.56MHz plasma-enhanced chemical vapor deposition method is used to sequentially deposit a 20nm amorphous silicon N1 layer, a 100nm amorphous silicon I1 layer, and a 10nm amorphous silicon P1 layer; the deposition process of the I1 layer can be diluted by radio frequency power and hydrogen Ratio or introduction of silicon oxide for optimal adjustment; sputtering a 90nm aluminum-doped zinc oxide layer on the P1 layer as the front electrode of the battery; the prepared battery is laminated and packaged, and the prepared amorphous silicon-copper indium gallium selenide integrated The conversion efficiency of the cell is 13.8%. It should be noted that, the rate range of the formation of the above film layer is greater than or equal to 0.1 nm/s and less than or equal to 0.5 nm/s.

When the silicon-based thin film solar cell power generation layer is an amorphous silicon germanium film layer, Figure 12 is a flow chart of the manufacturing method, as shown in Figure 12, when the silicon-based thin film solar cell power generation layer is an amorphous silicon germanium film layer, The manufacturing method includes: S26 forming a metal molybdenum layer on the glass substrate; S27 forming a copper indium gallium selenide film layer on the metal molybdenum layer; S28 forming the amorphous silicon germanium film layer on the copper indium gallium selenide film layer; S29 forming an aluminum-doped zinc oxide film layer on the amorphous silicon germanium film layer; S30 lamination packaging.

Specifically, a 100nm metal molybdenum layer was sputtered on the glass substrate by magnetron sputtering; a 2 μm copper indium gallium selenide film layer was deposited on the metal molybdenum layer by co-evaporation method; A 20nm amorphous silicon N2 layer, a 200nm amorphous silicon germanium I2 layer, and a 20nm amorphous silicon P2 layer were sequentially deposited by 13.56MHz plasma-enhanced chemical vapor deposition; then continue to deposit a 20nm amorphous silicon N1 layer; Continue to deposit a 100nm amorphous silicon I1 layer and a 10nm amorphous silicon P1 layer on the layer, wherein the deposition process of the amorphous silicon germanium I2 layer and the amorphous silicon I1 layer can be optimized by diluting it with radio frequency power, hydrogen, or introducing silicon oxide adjustment; sputtering a 90nm aluminum-doped zinc oxide layer on the amorphous silicon P1 layer as the front electrode of the battery; laminating and packaging the prepared battery, and converting the prepared amorphous silicon germanium-copper indium gallium selenide integrated battery The efficiency is 12.4%.

The above is a detailed introduction to the embodiment of a new type of solar cell and its manufacturing method provided by the present invention. In this paper, specific examples are used to illustrate the principle and implementation of the present invention. The description of the above embodiment is only used to help understanding The method of the present invention and its core idea; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation and application range. In summary, the content of the above embodiments should not be construed as limiting the present invention.

Claims (15)

1. A novel solar cell, characterized in that it comprises at least one first battery power generation layer and at least one second battery power generation layer; the first battery power generation layer and the second battery power generation layer are stacked together; all corresponding positions The first battery power generation layer is adjacent to and connected in series with the second battery power generation layer; The first cell is a silicon-based thin film solar cell, and the second cell is a copper indium gallium selenide solar cell. 2. The novel solar cell according to claim 1, characterized in that, the silicon-based thin film solar cell is an amorphous silicon and/or amorphous silicon germanium thin film solar cell. 3. The novel solar cell according to claim 2, characterized in that, the silicon-based thin-film solar cell comprises a semiconductor layer, which is the power generation layer of the silicon-based thin-film solar cell; wherein, The amorphous silicon thin film solar cell has at least one amorphous silicon semiconductor layer; The amorphous silicon germanium thin film solar cell has at least one amorphous silicon germanium semiconductor layer; The thin-film solar cell laminated with amorphous silicon and amorphous silicon germanium has at least one amorphous silicon semiconductor layer and at least one amorphous silicon germanium semiconductor layer, and the amorphous silicon semiconductor layer is in phase with the amorphous silicon germanium semiconductor layer. adjacent. 4. The new solar cell according to claim 1, characterized in that, the first battery power generation layer is connected in series with the second battery power generation layer, specifically, the positive electrode extending from the first battery power generation layer is connected by the second battery The negative electrode extended from the power generation layer; or the negative electrode extended from the first battery power generation layer is connected to the positive electrode extended from the second battery power generation layer. 5. The new solar cell according to claim 1, characterized in that, the first battery power generation layer is connected in series with the second battery power generation layer, specifically, the second battery power generation layer is formed on the second battery power generation layer by physical and/or chemical methods The first battery power generation layer. 6 . The novel solar cell according to claim 5 , wherein the order of the film layers after serial connection is the copper indium gallium selenide film layer and the semiconductor layer of the silicon-based thin film solar cell. 7 . The novel solar cell according to claim 5 , wherein the order of the film layers after series connection is the copper indium gallium selenide film layer, the transition layer and the semiconductor layer of the silicon-based thin film solar cell. 8. The novel solar cell according to claim 7, characterized in that the transition layer is a silicon oxide film layer. 9 . The novel solar cell according to claim 1 , wherein the thickness range of the novel solar cell is greater than or equal to 100 nm and less than or equal to 450 nm. 10. A method for manufacturing a novel solar cell, comprising: preparing a first battery; preparing a second battery; laminating the first battery and the second battery in series; wherein, The first cell is a silicon-based thin film solar cell, and the second cell is a copper indium gallium selenide solar cell. 11. The manufacturing method of a novel solar cell according to claim 10, characterized in that the preparation time sequence of the first battery and the second battery can be reversed, or the first battery and the second battery can be prepared at the same time . 12. The manufacturing method of novel solar cell according to claim 10, characterized in that radio frequency plasma enhanced chemical vapor deposition technology, hot wire chemical vapor deposition technology, high frequency plasma enhanced chemical vapor deposition technology, high frequency plasma enhanced chemical vapor deposition One or more of vapor phase deposition technology, electron cyclotron resonance chemical vapor deposition technology or wave plasma chemical vapor deposition technology. 13. The manufacturing method of the novel solar cell according to claim 10, characterized in that, the preparation of the second cell adopts a magnetron sputtering deposition method and co-evaporation. 14. A method for manufacturing a novel solar cell, comprising: forming a metal molybdenum layer on the glass substrate; forming a copper indium gallium selenide film layer on the metal molybdenum layer; forming the amorphous silicon and/or amorphous silicon germanium film layer on the copper indium gallium selenide film layer; forming an aluminum-doped zinc oxide film layer on the amorphous silicon and/or amorphous silicon germanium film layer; Laminate package. 15 . The manufacturing method of a novel solar cell according to claim 14 , wherein the rate range of the formation of the film layer is greater than or equal to 0.1 nm/s and less than or equal to 0.5 nm/s.

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