CN103617828B - Polymer dielectric material modification agent and the processing method of polymer dielectric material - Google Patents
Polymer dielectric material modification agent and the processing method of polymer dielectric material Download PDFInfo
- Publication number
- CN103617828B CN103617828B CN201310566173.5A CN201310566173A CN103617828B CN 103617828 B CN103617828 B CN 103617828B CN 201310566173 A CN201310566173 A CN 201310566173A CN 103617828 B CN103617828 B CN 103617828B
- Authority
- CN
- China
- Prior art keywords
- dielectric material
- polymer dielectric
- high molecular
- molecular surfactant
- cation high
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Organic Insulating Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention provides a kind of polymer dielectric material modification agent and the processing method of polymer dielectric material, this modifying agent includes organic amine, cation high molecular surfactant and water.Compared with cleaning conditioner of the prior art, present invention employing comprises organic amine and processes polymer dielectric material surface with cation high molecular surfactant, wherein, the surface of dielectric material can be cleaned by organic amine, the inorganic base attack to cation high molecular surfactant can be avoided, it helps the dissolving dispersion of cation high molecular surfactant simultaneously；And Zeta potential that cation high molecular surfactant is formed is higher, adsorb by strong positive charge, dielectric material surface is made to plant the functional group of Nitrogen element, the adsorbance of palladium activator and the interactive keys knotting strength of chemical copper can be increased, and then strengthen the adhesion force between chemical copper and polymer dielectric material.
Description
Technical field
The invention belongs to wire forming techniques field, particularly relate to polymer dielectric material modification agent and high score
The processing method of sub-dielectric material.
Background technology
In response to the compact demand of electronic product, wiring board and encapsulating carrier plate even volume circuit all must
Must be towards high-density development, in the processing technology of circuit, in addition to the aperture reducing via, micro-blind
The importing in hole the most all must be incorporated in these advanced process with the making on fine rule road, i.e. high density interconnection skill
The circuit design of art, in processing technology, mainly faces two problems: the making on fine rule road is mutual with interlayer
Reliability even.
For thin line manufacturing process, the way of current comparative maturity is the increasing layer skill using addition process
Art, the most again technique with semi-additive process as comparative maturity, but along with the physico-chemical property of dielectric material is with electric
The lifting of device character, the adhesion force between chemistry layers of copper and dielectric layer highlights the most gradually with thermal reliability problem.
When the size reduction of circuit and the transmission frequency of circuit increase, advanced dielectric material surface is necessary for
Possesses little roughness, to avoid scattering and disappearing and reducing RC delays effect (RC delay) of signal
With loss, therefore improving while the dielectric material opering characteristic of electric apparatus, have to last for again strengthened material with
Adhesion force between chemistry layers of copper, will be the key point of WeiLai Technology lifting.
ITRS (ITRS) assembles and encapsulation blueprint more new edition for 2008, for future
The attribute of performance of the carrier plate for packaging semiconductor of different shape and demand, it is provided that clear and definite technical specification, its
Pointing out, for the application of Flip Chip-BGA encapsulating carrier plate, wire sizes will reach 8/8 μm in 2014
Live width line-spacing requirement, and be contracted to 6/6 μm further in 2017；And for the opering characteristic of electric apparatus and 2013
Start in year to apply in response to high-speed high frequency (reaching 7.34GHz), it is necessary to by the dielectric of Layer increasing method dielectric material
Constant is reduced to less than 3, and loss tangent also must drop to less than 0.009, and other engineering propertiess are for material
Thermal coefficient of expansion also need persistently to reduce with material hydroscopicity.Meanwhile, RoHS with WEEE of European Union refers to
Make the environmental regulation such as the strong request for pb-free solder and disabling Halogen-free burning resistant agent, high density distribution must
Palpus uses the trends of design such as the base material of relatively low thermel expansion coefficient and preferable heat stability, high-speed broadband is wireless
The application of radio frequency also forces dielectric material must have more preferable mechanical performance.
Although adding the inorganic filler of non-halogen flame retardant (reactive organophosphor system DOPO) and high-load
(the SiO of up to 20%2Or Al (OH)2) can improve polymer dielectric material glass transition temperature (Tg),
Heat decomposition temperature (Td), young's modulus and tensile strength, also downgrade the thermal expansion system of X/Y and Z-direction
Number, elongation percentage and water absorption rate, but meanwhile, dielectric material also strengthens perhaps for the resistivity of chemistry
Many, improve the de-smear of post processing or the difficulty of roughening treatment.
At present, de-smear mainly uses wet chemical processing methods, i.e. includes solvent Gao Meng bulk, alkaline
Acid potassium oxidation is stung erosion and neutralizes four steps.For the dielectric material that polarity is higher, the method can be effectively increased material
The roughness on material surface, but on high polymer main chain, even there is no polar group, only for polarity is relatively low
There is the dielectric material of polar group on side chain or cross-bond, de-smear repeatedly processes also cannot produce and needs
The roughness wanted, and if time dielectric material has deeper and coarse surface pit-hole, also can dodge to the later stage
Erosion and palladium removing processing procedure bring heavy pressure.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of polymer dielectric material modification
Agent and the processing method of polymer dielectric material, this modifying agent can not increase dielectric material surface roughness
When strengthen the adhesion force of chemical copper and dielectric material.
The invention provides a kind of polymer dielectric material modification agent, composed of the following components: organic amine,
Cation high molecular surfactant, wetting agent and water；
Described cation high molecular surfactant is to live in the quarternary ammonium salt cationoid surface of formula (I) structure
Property agent:
Wherein, R1、R2With R3It is each independently selected from the alkyl of H or C1～C12；N is 1～20
Integer；
Described wetting agent is nonionic surfactant；
The concentration of described wetting agent is 1～1000ppm；
The content of described organic amine is (5～50) g/L；
The content of described cation high molecular surfactant is (0.1～10) g/L.
Preferably, described organic amine is selected from monoethanolamine, diethanolamine, triethanolamine, diethylenetriamine
With one or more in TEPA.
Preferably, described cation high molecular surfactant is Gemini surfactant.
Present invention also offers the processing method of a kind of polymer dielectric material, including:
Polymer dielectric material is soaked in polymer dielectric material modification agent, described polymer dielectric material
Material modifying agent includes organic amine, cation high molecular surfactant and water.
The invention provides a kind of polymer dielectric material modification agent and the process side of polymer dielectric material
Method, this modifying agent includes organic amine, cation high molecular surfactant and water.With of the prior art
Cleaning conditioner is compared, and the present invention uses and comprises organic amine with cation high molecular surfactant to high score
Sub-dielectric material surface processes, and wherein, the surface of dielectric material can be cleaned by organic amine, with
Time can avoid the inorganic base attack to cation high molecular surfactant, it helps cation high molecular
The dissolving dispersion of surfactant；And Zeta potential that cation high molecular surfactant is formed is higher,
Adsorb by strong positive charge, make dielectric material surface plant the functional group of Nitrogen element, palladium can be increased and live
The adsorbance of agent and the interactive keys knotting strength of chemical copper, and then strengthen chemical copper and polymer dielectric material
Between adhesion force.
Test result indicate that, the polymer dielectric material palladium adsorbance using modifier treatment of the present invention to cross can
Reach 3.37 μ g/cm2, process back pull up to 0.79N/mm through electro-coppering and baking sheet.
Detailed description of the invention
The invention provides a kind of polymer dielectric material modification agent, it is characterised in that including: organic amine,
Cation high molecular surfactant and water.
The source of all raw materials is not particularly limited by the present invention, for commercially available.
Wherein, the Main Function of described organic amine is to be cleaned dielectric material or copper foil surface, uses
Organic amine can avoid the inorganic base attack to cation high molecular surfactant, and also contributes to cation
The dissolving of high molecular surfactant and dispersion.Heretofore described organic amine be preferably monoethanolamine, two
Ethanolamine, triethanolamine, diethylenetriamine and one or more in TEPA.Described organic amine
Content in polymer dielectric material modification agent is preferably 5～50g/L, more preferably 10～45g/L, then
It is preferably 20～40g/L.
The cation high molecular table that described cation high molecular surfactant is well known to those skilled in the art
Face activating agent, i.e. quaternary ammonium compound, there is no special restriction.This cation high molecular surfactant
The Zeta potential formed is higher, by the absorption of strong positive charge, makes to implant on dielectric material Nitrogen element
Functional group, can increase the adsorbance of palladium activator and the interactive keys knotting strength of chemical copper, strengthen chemistry
Adhesion force between copper and polymer dielectric material.Heretofore described cation high molecular surfactant
Live in the quarternary ammonium salt cationoid surface being preferably Gemini surfactant, more preferably formula (I) structure
Property agent.
Wherein, R1、R2With R3Be each independently selected from the alkyl of H or C1～C12, preferably H or
The alkyl of C3～C8；Described alkyl is preferably saturated alkyl, and it can be that linear saturated alkyl alternatively props up
The saturated alkyl changed, there is no special restriction；N is the integer of 1～20, the integer of preferably 2～10, more
It is preferably the integer of 2,4,8.
The quarternary ammonium salt cationoid surfactant of formula (I) structure is the quarternary ammonium salt that overlength is alkyl-branched
Cationoid surfactant, it is the nitrogenous quaternary ammonium salt structure of the branched saturated carbon chains of overlength, in structure
Not containing the nitrogen heterocyclic ring structure of double bond or imidazoles, therefore molecule softness is readily bent free to rotate, shape
The stress become is relatively low.
The pretreatment procedure of traditional chemical copper technique is de-smear or is referred to as roughening, mainly by polarity
Dissolving the chemical characteristic of polarity, the polar solvent of employing is laid equal stress on by hydrogen bond or Robert Van de Walle gravitational attraction and is newly led
The polar group of line dielectric material surface, increases the quantity of the polar group of dielectric material surface, after lifting
Continuous oxidation is stung and is lost the attack to polar chemical key and cut-out.Polar solvent diffuses within dielectric material
Free space, weakens high molecular bond energy, increases bond distance, produces the effect expanded.Solvent is swollen
The Strong oxdiative power recycling potassium permanganate oxidant after pine attacks (reaction) high molecular polar fraction, cuts
Disconnected polarity bond causes fragment, and oxidant persistently spreads and attacks further stings erosion.The difference of oxidant is stung
Erosion adds the roughness of macromolecule surface, adds the oxygen/carbon ratio on surface simultaneously, but oxygen element cannot
Directly absorption divalent palladium ion, it is necessary to through stannous bridge joint effect and reduction reaction, therefore absorption affinity
More weak.And through comprising the polymer dielectric material of organic amine and cation high molecular surfactant
After modifying agent soaks, polymer dielectric material surface plants the functional group containing N structure, and these are nitrogenous four years old
Level ammonium structure has a fairly large number of non-coordinated electronic, has strong electrophilicity for divalent palladium ion,
Therefore divalent palladium ion can directly be adsorbed, it is no longer necessary to through stannous sensitization absorption and bridge joint, can be big
Amount increases the adsorbance of palladium activator, and then improves the adhesion force of chemical copper and polymer dielectric storeroom.
According to the present invention, the content of polymer dielectric material modification agent cationic high molecular surfactant
It is preferably 0.1～10g/L, more preferably 0.5～5g/L.The content of cation high molecular surfactant is too much
May result in surfactant cladding impurity positively charged in modifying agent and form micelle, cause rear operation
The coarse particles of chemical copper or electro-coppering tumor；And if content is less, then may be unable to reach dielectric material
The effect of material chemical modification.
Polymer dielectric material modification agent of the present invention the most also includes wetting agent, it is possible to decrease polymer dielectric material
The infiltration surface tension of material, it is preferably nonionic surfactant, the more preferably resistance to height of the low bubble of nonionic
The surfactant of temperature；In polymer dielectric material modification agent, the concentration of wetting agent is preferably 1～1000ppm,
More preferably 100～900ppm, it is further preferably 200～800ppm, most preferably 400～600ppm.
The present invention uses and comprises organic amine with cation high molecular surfactant to polymer dielectric material list
Face processes, and wherein, the surface of dielectric material can be cleaned by organic amine, can avoid inorganic simultaneously
The alkali attack to cation high molecular surfactant, it helps cation high molecular surfactant
Dissolve dispersion；And Zeta potential that cation high molecular surfactant is formed is higher, by strong positive electricity
Lotus is adsorbed, and makes dielectric material surface plant the functional group of Nitrogen element, can increase the absorption of palladium activator
Amount and the interactive keys knotting strength of chemical copper, and then strengthen the adherence between chemical copper and polymer dielectric material
Power.The dielectric material processed through the polymer dielectric material modification agent of the present invention adsorbance to palladium activator
Increase, the palladium activator that wherein said palladium activator is well known to those skilled in the art, preferably alkali stannum
Colloidal activating dose of palladium, alkali ion palladium activator, nanoparticle palladium activator or Nanometer Copper palladium bimetallic are lived
Agent.
Present invention also offers the processing method of a kind of polymer dielectric material, polymer dielectric material is soaked
Steeping in polymer dielectric material modification agent, described polymer dielectric material includes that organic amine, cation are high
Molecular surface active agent and water.
Wherein, described organic amine, cation high molecular surfactant are the most same as above with water, at this not
Repeat again.Described polymer dielectric material the most also includes wetting agent, and described wetting agent is the most same as above,
Do not repeat them here.
Polymer dielectric material is soaked in polymer dielectric material modification agent, the bar of wherein said immersion
The condition that part is well known to those skilled in the art, there is no special restriction, heretofore described immersion
Temperature be preferably 20 DEG C～80 DEG C, more preferably 40 DEG C～60 DEG C；The time of described immersion is preferably 1～30
Min, more preferably 2～20min, be further preferably 3～15min, most preferably 4～10min.
Polymer dielectric material is after polymer dielectric material modification agent processes, then carries out people in the art
Palladium activation known to Yuan and chemical copper step.
Test result indicate that, the polymer dielectric material palladium adsorbance using modifier treatment of the present invention to cross can
Reach 3.37 μ g/cm2, process back pull up to 0.79N/mm through electro-coppering and baking sheet.
In order to further illustrate the present invention, a kind of macromolecule provided the present invention below in conjunction with embodiment is situated between
The processing method of electric material modifying agent and polymer dielectric material is described in detail.
Reagent used in following example is commercially available.In all embodiments and comparative example, for avoiding removing
The adsorbance of the roughness differentia influence activation of glue slag pre-treatment, designs the pre-treatment without de-smear；
For avoiding the difference influence of fluctuations evaluation result of palladium concentration, activating solution uses the activated bath of production line 750L
(palladium concentration is 32ppm)；For avoiding the palladium adsorbance of base material edges of boards matsurface to affect experiment degree of accuracy, will
Base material, after soaking activated bath, grinds edges of boards with sand paper, removes the palladium of edges of boards absorption.
Embodiment 1
The formula of 1.1 polymer dielectric material modification agent is: triethanolamine 25g/L；Surpassing of formula (I) structure
Branched Gemini cationic surfactant 1g/L, wherein R1For CH3、R2For C12H25、R3For CH3,
N=2；Nonionic surfactant TRITON X-100 0.5g/L；Surplus is water, as shown in table 1.
The raw benefit Tg150 backing material plate face Copper Foil etching solution of 5 × 5cm is removed by 1.2, is then soaked in 1.1
In in the polymer dielectric material modification agent that obtains, 60 DEG C are soaked 5min, and after washing, leaching is placed in activated bath
In (Palladous chloride. 54mg/L, stannous chloride 8g/L, sodium chloride 200g/L with chemical pure level sulphuric acid 45g/L),
Take out after 5min, after washing, be soaked in accelerator solution (the sodium bicarbonate 10g/L of constant temperature 45 DEG C
With sodium chlorite 4.5g/L), take out washing after 2.5min, the chemical copper being then soaked in constant temperature 32 DEG C is molten
Liquid (copper sulphate pentahydrate 2g/L, EDTA-4Na 25g/L, sodium hydroxide 10g/L, formaldehyde 5g/L and 2,2 '-
Bipyridyl 5ppm) in, soak 15min, take out base material and wash drying, obtaining sample.
The edges of boards of the sample obtained in 1.2 are ground processing, after grinding off chemical copper and palladium layers, dip stick
Very little, long (Acm) and wide (B cm), the sample after then grinding is dissolved in 50ml chloroazotic acid, generalization
Learn copper and palladium layers is completely dissolved, make dissolving solution completely be settled to 100ml, with flame-type Atomic Absorption
Palladium concentration X ppm in spectrometer analysis solution, utilizes formula 1000 × X/ [10 × 2 × (A × B)] to calculate palladium
Unit are adsorbance (μ g/cm2), result is as shown in table 1.
Selecting three blocks of raw benefit Tg150 base materials, numbered 1#, 2# walk according to the method in embodiment 1 with 3#
Suddenly process, test the unit are adsorbance of its palladium according to the method for testing of above-mentioned palladium adsorbance respectively,
Result is as shown in table 2.
The sample obtained in 1.2 carries out electroplate thickening process, implements 60min with 20ASF electric current density,
Making copper layer thickness increase to 40 μm, be then placed in baking box carrying out baking sheet process, baking sheet condition is 150 DEG C
Baking 4h, carries out annealing recrystallization to electrodeposited coating, and the plate surface state after visual baking sheet only presents little circle
Bubble, according to ASTM B533-85, the sample before and after baking sheet is carried out pull test, test its pulling force strong
Degree, before baking sheet, pulling force is 0.11N/mm, and baking sheet back pull is 0.68N/mm.
After baking sheet, be positioned in 288 DEG C of stannum stoves drift stannum 10s, be cooled to room temperature, carry out 3 respectively, 5,7,
8 times drift tin test, carry out sections observation with metallurgical microscope, inspect whether have between coating and base material layering,
Bubble hole wall float off phenomenon, be found only at the 8th time drift tin test after hole wall some be slightly layered.
Embodiment 2
The formula of 2.1 polymer dielectric material modification agent is: triethanolamine 25g/L；Surpassing of formula (I) structure
Branched Gemini cationic surfactant 0.75g/L, wherein R1For CH3、R2For C12H25、R3For
CH3, n=2；Nonionic surfactant TRITON X-1000.5g/L；Surplus is water, as shown in table 1.
The raw benefit Tg150 backing material plate face Copper Foil etching solution of 5 × 5cm is removed by 2.2, is then soaked in 2.1
In in the polymer dielectric material modification agent that obtains, 60 DEG C are soaked 5min, and after washing, leaching is placed in activated bath
In (Palladous chloride. 54mg/L, stannous chloride 8g/L, sodium chloride 200g/L with chemical pure level sulphuric acid 45g/L),
Take out after 5min, after washing, be soaked in accelerator solution (the sodium bicarbonate 10g/L of constant temperature 45 DEG C
With sodium chlorite 4.5g/L), take out washing after 2.5min, the chemical copper being then soaked in constant temperature 32 DEG C is molten
Liquid (copper sulphate pentahydrate 2g/L, EDTA-4Na 25g/L, sodium hydroxide 10g/L, formaldehyde 5g/L and 2,2 '-
Bipyridyl 5ppm) in, soak 15min, take out base material and wash drying, obtaining sample.
The edges of boards of the sample obtained in 2.2 are ground processing, after grinding off chemical copper and palladium layers, dip stick
Very little, long (A cm) and wide (B cm), the sample after then grinding is dissolved in 50ml chloroazotic acid, generalization
Learn copper and palladium layers is completely dissolved, make dissolving solution completely be settled to 100ml, with flame-type Atomic Absorption
Palladium concentration X ppm in spectrometer analysis solution, utilizes formula 1000 × X/ [10 × 2 × (A × B)] to calculate palladium
Unit are adsorbance (μ g/cm2), result is as shown in table 1.
The sample obtained in 2.2 carries out electroplate thickening process, implements 60min with 20ASF electric current density,
Making copper layer thickness increase to 40 μm, be then placed in baking box carrying out baking sheet process, baking sheet condition is 150 DEG C
Baking 4h, carries out annealing recrystallization to electrodeposited coating, enters the sample after baking sheet according to ASTM B533-85
Row pull test, tests its tension intensity, the results are shown in Table 1.
Embodiment 3
The formula of 3.1 polymer dielectric material modification agent is: triethanolamine 25g/L；Surpassing of formula (I) structure
Branched Gemini cationic surfactant 1.5g/L, wherein R1For CH3、R2For C12H25、R3For
CH3, n=2；Nonionic surfactant TRITON X-1000.5g/L；Surplus is water, as shown in table 1.
The raw benefit Tg150 backing material plate face Copper Foil etching solution of 5 × 5cm is removed by 3.2, is then soaked in 3.1
In in the polymer dielectric material modification agent that obtains, 60 DEG C are soaked 5min, and after washing, leaching is placed in activated bath
In (Palladous chloride. 54mg/L, stannous chloride 8g/L, sodium chloride 200g/L with chemical pure level sulphuric acid 45g/L),
Take out after 5min, after washing, be soaked in accelerator solution (the sodium bicarbonate 10g/L of constant temperature 45 DEG C
With sodium chlorite 4.5g/L), take out washing after 2.5min, the chemical copper being then soaked in constant temperature 32 DEG C is molten
Liquid (copper sulphate pentahydrate 2g/L, EDTA-4Na 25g/L, sodium hydroxide 10g/L, formaldehyde 5g/L and 2,2 '-
Bipyridyl 5ppm) in, soak 15min, take out base material and wash drying, obtaining sample.
The edges of boards of the sample obtained in 3.2 are ground processing, after grinding off chemical copper and palladium layers, dip stick
Very little, long (A cm) and wide (B cm), the sample after then grinding is dissolved in 50ml chloroazotic acid, generalization
Learn copper and palladium layers is completely dissolved, make dissolving solution completely be settled to 100ml, with flame-type Atomic Absorption
Palladium concentration X ppm in spectrometer analysis solution, utilizes formula 1000 × X/ [10 × 2 × (A × B)] to calculate palladium
Unit are adsorbance (μ g/cm2), result is as shown in table 1.
The sample obtained in 3.2 carries out electroplate thickening process, implements 60min with 20ASF electric current density,
Making copper layer thickness increase to 40 μm, be then placed in baking box carrying out baking sheet process, baking sheet condition is 150 DEG C
Baking 4h, carries out annealing recrystallization to electrodeposited coating, enters the sample after baking sheet according to ASTM B533-85
Row pull test, tests its tension intensity, the results are shown in Table 1.
Embodiment 4
Life benefit Tg150 base material is replaced with Rogers (Rogers) Teflon high frequency substrate, according to enforcement
The method step of example 1 processes, and tests after obtaining sample, obtains it and passes sequentially through chemical copper
Yield up to 90%, and can realize 3 times drift stannum thermal shock experiments the most do not find the phenomenon that hole wall floats off.
Comparative example 1
The cleaning conditioner formula of 1.1 traditional circuit plates is: ethylene glycol 25g/L；Polyvinyl imidazole, quaternary ammonium
Change 1g/L；Nonionic surfactant TRITON X-100 0.5g/L；Surplus is water, as shown in table 1.
The raw benefit Tg150 backing material plate face Copper Foil etching solution of 5 × 5cm is removed by 1.2, is then soaked in 1.1
In in the cleaning conditioner that obtains, 60 DEG C are soaked 5min, and after washing, leaching is placed in (Palladous chloride. in activated bath
54mg/L, stannous chloride 8g/L, sodium chloride 200g/L and chemical pure level sulphuric acid 45g/L), after 5min
Take out, after washing, be soaked in accelerator solution (sodium bicarbonate 10g/L and the chlorous acid of constant temperature 45 DEG C
Sodium 4.5g/L), take out washing after 2.5min, be then soaked in chemical copper solution (five water of constant temperature 32 DEG C
Copper sulfate 2g/L, EDTA-4Na 25g/L, sodium hydroxide 10g/L, formaldehyde 5g/L and bipy 2,2' bipyridyl
In 5ppm), soak 15min, take out base material and wash drying, obtaining sample.
The edges of boards of the sample obtained in 1.2 are ground processing, after grinding off chemical copper and palladium layers, dip stick
Very little, long (A cm) and wide (B cm), the sample after then grinding is dissolved in 50ml chloroazotic acid, generalization
Learn copper and palladium layers is completely dissolved, make dissolving solution completely be settled to 100ml, with flame-type Atomic Absorption
Palladium concentration X ppm in spectrometer analysis solution, utilizes formula 1000 × X/ [10 × 2 × (A × B)] to calculate palladium
Unit are adsorbance (μ g/cm2), result is as shown in table 1.
Selecting three blocks of raw benefit Tg150 base materials, numbered 1#, 2# walk according to the method in comparative example 1 with 3#
Suddenly process, test the unit are adsorbance of its palladium according to the method for testing of above-mentioned palladium adsorbance respectively,
Result is as shown in table 2.
The sample obtained in 1.2 carries out electroplate thickening process, implements 60min with 20ASF electric current density,
Making copper layer thickness increase to 40 μm, visually, sample surfaces presents the phenomenon almost peeled off.
Comparative example 2
Life benefit Tg150 base material is replaced with Rogers (Rogers) Teflon high frequency substrate, according to comparing
The method step of example 1 processes, and tests after obtaining sample, and it has very high percentage and chemistry occurs
Copper criticizes the phenomenon that the property covered is the best, it is necessary to uses 2 chemical copper, just can ensure that the quality of chemical copper.
Table 1 embodiment 1～3 and comparative example 1 composition and test result
Table 2 embodiment 1 and comparative example 1 palladium adsorbance test result
As shown in Table 2, according to embodiment 1 modified dielectric material palladium adsorbance increasing compared with comparative example 1
Add about 50%.
The above is only the preferred embodiment of the present invention, it is noted that general for the art
For logical technical staff, under the premise without departing from the principles of the invention, it is also possible to make some improvement and profit
Decorations, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (4)
1. a polymer dielectric material modification agent, it is characterised in that composed of the following components: to have
Machine amine, cation high molecular surfactant, wetting agent and water；
Described cation high molecular surfactant is the quarternary ammonium salt cationoid table of formula (I) structure
Face activating agent:
Wherein, R1、R2With R3It is each independently selected from the alkyl of H or C1～C12；N is 1～20
Integer；
Described wetting agent is nonionic surfactant；
The concentration of described wetting agent is 1～1000ppm；
The content of described organic amine is (5～50) g/L；
The content of described cation high molecular surfactant is (0.1～10) g/L.
Polymer dielectric material modification agent the most according to claim 1, it is characterised in that institute
State organic amine selected from monoethanolamine, diethanolamine, triethanolamine, diethylenetriamine and four ethylene five
One or more in amine.
Polymer dielectric material modification agent the most according to claim 1, it is characterised in that institute
Stating cation high molecular surfactant is Gemini surfactant.
4. the processing method of a polymer dielectric material, it is characterised in that including:
Being soaked in polymer dielectric material modification agent by polymer dielectric material, described macromolecule is situated between
Electric material modifying agent is the polymer dielectric material modification agent described in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566173.5A CN103617828B (en) | 2013-11-13 | 2013-11-13 | Polymer dielectric material modification agent and the processing method of polymer dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566173.5A CN103617828B (en) | 2013-11-13 | 2013-11-13 | Polymer dielectric material modification agent and the processing method of polymer dielectric material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103617828A CN103617828A (en) | 2014-03-05 |
| CN103617828B true CN103617828B (en) | 2017-01-04 |
Family
ID=50168531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310566173.5A Expired - Fee Related CN103617828B (en) | 2013-11-13 | 2013-11-13 | Polymer dielectric material modification agent and the processing method of polymer dielectric material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103617828B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104611161A (en) * | 2015-01-19 | 2015-05-13 | 通山瑞邦电子科技有限公司 | Alkaline degreasing and conditioning agent as well as preparation method thereof |
| CN105132977B (en) * | 2015-08-31 | 2017-12-29 | 广东东硕科技有限公司 | A kind of adjustment liquid for wiring board manufacture and preparation method thereof |
| CN109679775B (en) * | 2019-02-21 | 2021-03-23 | 深圳市天熙科技开发有限公司 | Acidic pore-finishing agent for circuit board hole metallization process and preparation method of circuit board |
| CN118085377A (en) * | 2024-01-31 | 2024-05-28 | 中山美力特环保科技有限公司 | Nylon surface regulator and surface regulating method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101917826A (en) * | 2010-08-03 | 2010-12-15 | 东莞市仁吉电子材料有限公司 | Method for increasing binding force between electric conductor and non-conductive polymer dielectric layer in printed circuit board substrate |
| CN102758193A (en) * | 2012-07-31 | 2012-10-31 | 湖南利尔电子材料有限公司 | Electroless copper plating pretreatment solution used for high-frequency circuit board |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7500397B2 (en) * | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
-
2013
- 2013-11-13 CN CN201310566173.5A patent/CN103617828B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101917826A (en) * | 2010-08-03 | 2010-12-15 | 东莞市仁吉电子材料有限公司 | Method for increasing binding force between electric conductor and non-conductive polymer dielectric layer in printed circuit board substrate |
| CN102758193A (en) * | 2012-07-31 | 2012-10-31 | 湖南利尔电子材料有限公司 | Electroless copper plating pretreatment solution used for high-frequency circuit board |
Non-Patent Citations (1)
| Title |
|---|
| 超支化吉米奇（Gemini）季铵盐的合成、性能与应用;李健婷等;《精细与专用化学品》;20061101;第14卷(第S1期);第40页倒数第1段、第41页右栏第3段3.4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103617828A (en) | 2014-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103617828B (en) | Polymer dielectric material modification agent and the processing method of polymer dielectric material | |
| TWI579407B (en) | Electroless copper plating compositions | |
| TW201235507A (en) | Plating catalyst and method | |
| TWI527931B (en) | Formaldehyde free electroless copper plating compositions and methods | |
| JP2008121106A (en) | Improved electroless copper composition | |
| DE19822075C2 (en) | Process for the metallic coating of substrates | |
| CN113195787B (en) | Aqueous alkaline pretreatment solution for use prior to deposition of palladium activation layer, method and use thereof | |
| CN110106536B (en) | An acid copper plating solution for copper filling in blind holes of printed circuit boards and method for filling copper in blind holes | |
| CN104532214A (en) | Preparation method of high-performance conductive glass fiber | |
| CN104744974B (en) | A kind of PCB generates the production technology of macromolecule conductive film with modified activating solution and in PCB through hole and blind hole | |
| CN102888628B (en) | Electro-nickelling working solution for PET (polyethylene glycol terephthalate) substrate based FPC (flexible printed circuit) board | |
| CN102797001A (en) | Choline-chloride-based chemical tinning solution and application method thereof | |
| Dow et al. | A novel copper electroplating formula for laser‐drilled micro via and through hole filling | |
| Sun et al. | Conductive polyaniline film synthesized through in-situ polymerization as a conductive seed layer for hole metallization of printed circuit boards | |
| TW202106926A (en) | Method for producing a printed wiring board | |
| CN115874447A (en) | A kind of electronic glass fiber cloth treatment agent and its preparation method and application | |
| US10138558B2 (en) | Pretreatment agent for electroless plating, and pretreatment and production of printed wiring board using same | |
| Sun et al. | Adhesion study between electroless seed layers and build-up dielectric film substrates | |
| Mei et al. | An Enhanced Interlayer Construction Strategy for High‐Frequency Copper Clad Laminates: Resolving the Contradiction between Signal Loss and Adhesion | |
| KR101199305B1 (en) | Manufacturing Method of Highly Electro-conductive Carbon Fibers Using Cobalt Based Reducing Agent | |
| CN101933127A (en) | Methods and compositions for depositing silver onto a metal surface | |
| EP0662984A1 (en) | Process for treating plastic surfaces and swelling solution | |
| KR102764340B1 (en) | Catalyst solution | |
| TWI414643B (en) | Composition of copper electroplating solution | |
| KR101184558B1 (en) | Pre-treating agent for electroless metal plating and manufacturing method of circuit board using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200921 Address after: 518000 628, building 1, guanlida building, 269 Qianjin 1st Road, Wenhui community, Xin'an street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN FARCIEN APPLIED MATERIALS Co.,Ltd. Address before: 425300 Industrial Park, Daoxian County State Road, Yongzhou, Hunan Patentee before: HUNAN FARCIEN APPLIED MATERIALS Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170104 Termination date: 20211113 |