CN103607687B - A kind of MEMS microphone defect monitoring structure and its manufacturing method - Google Patents
A kind of MEMS microphone defect monitoring structure and its manufacturing method Download PDFInfo
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Abstract
The invention discloses a kind of MEMS microphone monitoring structures, include the substrate with cavity；First medium layer has the through-hole communicated with cavity；Lower electrode layer, including vibrating membrane and the first lead division for being attached thereto；Second dielectric layer；Upper electrode layer and insulating layer, insulating layer has the main part for wherein forming multiple trepannings, upper electrode layer includes the second lead division and the multiple mutually disjunct concave configurations with hollow portion extended towards vibrating membrane formed below trepanning, the main part composition back electrode structure of concave configuration and insulating layer；The section of concave configuration is concave shape, and bottom is parallel with vibrating membrane, and multiple capacity plate antennas are formed with vibrating membrane；Air-gap is formed between vibrating membrane and back electrode structure；And release aperture, it is formed in back electrode structure, is connected to air-gap and through-hole.The present invention can easily measure the deformation of different zones under vibrating membrane vibrational state.
Description
Technical field
The present invention relates to technical field of microelectronic mechanical systems, more particularly to a kind of MEMS microphone defect monitoring structure and
Its manufacturing method.
Background technology
MEMS microphone is one of most successful MEMS product so far, is added by the surface compatible with IC manufacturing
Work or the microphone of Bulk micro machining manufacture can be made very small using the CMOS technology technology of lasting micro, can
It is widely applied in the portable equipments such as mobile phone, laptop, tablet computer and video camera.
MEMS microphone has the vibration film and back electrode film of hanging structure, and how to realize this two layers of on-line monitoring
Whether film is bent, and controls yield rate extremely important.
The pattern test of film is generally carried out using white light interference or confocal laser at present, but this method has a foregone conclusion
It is sex-limited, it is mainly reflected in：When film is bigger, in the case where ensureing resolution ratio, visual field is smaller, needs to utilize splicing
Form a complete sub-picture；Use white light interference or confocal laser that can only test the pattern of topmost thin film, in order to lower layer in addition
The pattern of film is also tested, and the prior art is chosen in entire silicon chip after the topmost thin film to entire silicon chip is graphical
Segment chip its topmost thin film is removed, be monitored online to expose lower film.Specifically, pass through 4 times
Or 4~5 times of pattern reduction in reticle is exposed to an exposure field of silicon chip by the litho machine of 5 times of projection multiplying powers（shot）,
There are several chips in one exposure field（die）, therefore only need an exposure field to connect an exposure field and carry out multiple exposure, finally
Realize the photolithography patterning of entire silicon chip.
However, the chip for eliminating topmost thin film is only used for being monitored online, the microphone function of itself is no longer valid,
And cost increase can be undoubtedly caused there are one the chip to fail in this way in each exposure field.
Invention content
The purpose of the present invention is to provide a kind of MEMS microphone defect monitoring structure and its manufacturing methods, can be to MEMS
Vibration membrane for microphone carries out process monitoring, accurately and easily measures the deformation of vibrating membrane different location.
To reach above-mentioned purpose, the present invention provides a kind of defect monitoring structure of MEMS microphone, including：Substrate, tool
There is cavity；First medium layer is formed in the substrate top surface, has the through-hole communicated with the cavity；Lower electrode layer, including
Vibrating membrane and the first lead division being attached thereto, the vibrating membrane are located at the top of the through-hole；Second dielectric layer is located at described
Vibrating membrane is with first medium layer and the lower electrode layer top of exterior domain；The upper electrode layer that is sequentially located in the second dielectric layer and
Insulating layer, the insulating layer have main part, and multiple trepannings are formed in the main part, and the upper electrode layer includes the second extraction
Portion and the multiple concave configurations with hollow portion extended towards the vibrating membrane formed below the trepanning, under described
Recessed structure and the main part of the insulating layer constitute back electrode structure；The section of the wherein described concave configuration is concave shape, bottom
Portion is parallel with the vibrating membrane；The multiple concave configuration is mutually not attached to, and is drawn respectively by multiple second lead divisions；
The bottom of the multiple concave configuration forms multiple capacity plate antennas with the vibrating membrane；Air-gap, be formed in the vibrating membrane with
Between the back electrode structure；And release aperture, it is formed in the back electrode structure, is connected to the air-gap.
Optionally, the release aperture is formed in the main part of the concave configuration and/or the insulating layer.
Optionally, the material of the upper electrode layer and the lower electrode layer is metal or the polysilicon of doping.
Optionally, the material of the insulating layer is silicon nitride, and the material of the first medium layer and second dielectric layer is oxygen
SiClx.
Optionally, the defect monitoring structure is exposed and is formed in the spy of entire silicon chip by using one times of reticle
Determine on chip, the graphics chip of one times of reticle corresponds to the graphics chip of entire silicon chip.
The present invention also provides a kind of manufacturing methods of above-mentioned MEMS microphone defect monitoring structure, include the following steps：
First medium layer, patterned lower electrode layer and second dielectric layer are sequentially formed on substrate；The lower electrode layer, which defines, to shake
Dynamic film and the first lead division being connected with the vibrating membrane；The second dielectric layer is etched with the shape in the second dielectric layer
At multiple grooves；Upper electrode layer and graphical is deposited on above structure, the upper electrode layer defines multiple in the groove
In be deposited as one layer and the concave configuration with hollow portion that horizontally outward extends from the trenched side-wall upper end and with it is described
Multiple concave configurations correspond to connected multiple second lead divisions；The section of the concave configuration be concave shape, and it is the multiple under
Recessed structure is mutually not attached to；Deposition third dielectric layer is simultaneously graphical, and the third dielectric layer is made to be only filled in the multiple recessed knot
In the hollow portion of structure；The depositing insulating layer and graphical on above structure, removes the insulating layer on the third dielectric layer,
The insulating layer has the main part for surrounding the third dielectric layer；Etching removes the third medium in the insulating layer master
The trepanning for exposing the multiple concave configuration is formed in body portion；The main part of the insulating layer and the multiple concave configuration shape
At back electrode structure；The release aperture that multiple bottoms extend to the second dielectric layer is formed in the back electrode structure；It is formed
It is located at the vibrating membrane through the cavity of the substrate, at the top of the cavity with the lower section of inner region；And pass through the cavity
And the release aperture carries out release process, removes the first medium layer and the second dielectric layer above the cavity, the back of the body
The air-gap formed between electrode structure and the vibrating membrane, the bottom of the multiple concave configuration form more with the vibrating membrane
A capacity plate antenna.
Optionally, the step that multiple bottoms extend to the release aperture of the second dielectric layer is formed in the back electrode structure
Suddenly it is：Deposition upper electrode layer is simultaneously graphical, and the upper electrode layer defines the multiple concave configuration and the multiple second
Lead division, and through-hole is formed in at least partly described concave configuration using as the release aperture；And/or the master in the insulating layer
The release aperture is etched in body portion.
Optionally, the material of the upper electrode layer and the lower electrode layer is metal or the polysilicon of doping.
Optionally, the insulating materials is silicon nitride, and the material of the first medium layer is silica.
Optionally, the defect monitoring structure is formed in the certain chip of entire silicon chip, carries out the manufacturing method
Multiple reticles needed for each step are one times of reticle, and the graphics chip of one times of reticle corresponds to entire silicon chip
Graphics chip.
The advantage of the invention is that passing through the back of the body with multiple concave configurations and insulative body portion extended towards vibration membrane
Electrode structure reduces the bottoms of multiple concave configurations at a distance from vibrating membrane to form multiple capacity plate antennas, and electrode shakes instantly
Dynamic film bend deformation when, can be by testing the capacitance of each capacity plate antenna, to assess each different location/area of vibrating membrane
The different distortion situation in domain, compared to traditional optical monitoring method, the present invention monitors not vibrated film size limit using electricity
System, it is more simple and convenient.
Description of the drawings
Fig. 1 is the schematic diagram of the MEMS microphone defect monitoring structure of one embodiment of the invention；
Fig. 2 is the vertical view of the back electrode structure of MEMS microphone defect monitoring structure shown in FIG. 1；
Fig. 3 to Fig. 9 is the sectional view of MEMS microphone defect monitoring structure manufacturing method of the present invention；
Figure 10 is the schematic diagram of the reticle of MEMS microphone defect monitoring structure for manufacturing the present invention.
Specific implementation mode
To keep present disclosure more clear and easy to understand, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
First, the MEMS microphone defect monitoring structure of one embodiment of the invention is illustrated.As shown in Figure 1, MEMS
Microphone defect monitoring structure includes semiconductor substrate 101, first medium layer 102, lower electrode layer 103, second dielectric layer 102 ',
Upper electrode layer and insulating layer 105.Wherein, cavity 110 is formed in substrate, shape can be cylindrical or cone.First
Dielectric layer 102 is formed in 101 upper surface of semiconductor substrate, has the through-hole being connected to cavity 110.Lower electrode layer 103 is to lead
Electric material comprising the vibrating membrane 103a and the first lead division of interconnection（Do not show in figure）, vibrating membrane 103a draws by first
Go out portion's extraction.Second dielectric layer 102 ' is formed in vibrating membrane 103a with the lower electrode layer 103 and first medium layer 102 ' of exterior domain
On.Upper electrode layer is conductive material, is located in second dielectric layer 102 '.Insulating layer 105 is located on upper electrode layer comprising main
Multiple trepannings are formed in body portion 105a, main part 105a, upper electrode layer forms multiple towards vibrating membrane below these trepannings
The concave configuration 104 with hollow portion 104a that 103a extends, insulating layer main part 105a and multiple concave configurations 104 are constituted
The back electrode structure of the present embodiment microphone monitor structure.As shown in Figure 1, concave configuration 104 is perpendicular to substrate top surface side
To section be concave shape, the spacing between bottom and vibrating membrane 103 becomes smaller and parallelly vacantly above vibrating membrane 103a,
The part that the upper end horizontally outward extends is located at below the insulating layer of aperture perimeters.Between these concave configurations 104 mutually not
It is connected, and each concave configuration 104 passes through the second lead division of a upper electrode layer respectively（Refer to Fig. 2）It draws.So
One, bottom and the vibrating membrane 103a of these concave configurations 104 are formed multiple capacity plate antennas.
In addition, having the multiple release apertures for forming air-gap for carrying out release process in back electrode structure（In Fig. 2 not
Show）, these release apertures can be formed in concave configuration 104 or be formed in the main part 105a of insulating layer.Insulating layer also wraps
Support portion is included, the upper electrode layer below support portion and support portion can be supported on lower electrode layer 103 by second dielectric layer 102 '
On, so that back electrode structure is suspended on above vibrating membrane 103a and forms air-gap 111 between vibrating membrane 103a.And vibrating membrane
103a is then supported in by first medium layer on substrate 101.The material of lower electrode layer and upper electrode layer is, for example, Al, W, Cu etc. golden
The polysilicon for belonging to or adulterating.First medium layer 102 and the material of second dielectric layer 102 ' be, for example, hot oxide growth silica,
Plasma enhanced chemical vapor deposition（PECVD）The non-impurity-doped silica of method deposition（USG）, p-doped silica（PSG）
Or the silica mixed with boron phosphorus（BPSG）.The material of insulating layer 105 is, for example, silicon nitride or other insulating materials.In the present embodiment
In, the shape of the main part 105a of vibrating membrane 103a and insulating layer is circle, and the first lead division and the second lead division are elongated
Rectangle is electrically connected with external circuit formation.The present invention is not limited thereto for the forming method of electrical connection, such as when upper/lower electrode layer
The contact hole for extending to the first lead division and the second lead division when being metal by forming bottom is directly led out, and works as upper/lower electrode
By forming metal electrode liner in contact hole to form the methods of electrical connection when layer is the polysilicon of doping.
In conclusion the present invention is character cut in bas-relief using multiple mutually disjunct sections extended to vibrating membrane of back electrode structure
The concave configuration of shape makes the bottom of multiple concave configurations form multiple capacity plate antennas with vibrating membrane, can thus pass through measurement
Flexural deformation situation of the change monitoring vibrating membrane each region of the capacitance of each capacity plate antenna in vibration.
The manufacturing method of the MEMS microphone defect monitoring structure of the present invention is carried out below in conjunction with specific embodiments
Detailed description.Technical solution in order to better illustrate the present invention, it is MEMS microphone structure of the present invention to please refer to Fig.3 to figure
Manufacturing method sectional view.
First, referring to FIG. 3, sequentially forming first medium layer 102 in semiconductor substrate 101, patterned lower electrode
Layer 103 and second dielectric layer 102 '.Specifically, first medium layer 102 is deposited first.The material of substrate 101 can be silicon, germanium
Or germanium silicon.First medium layer 102 can be silica, the plasma enhanced chemical vapor deposition of hot oxide growth（PECVD）Side
The non-impurity-doped silica of method deposition（USG）, p-doped silica（PSG）Or the silica mixed with boron phosphorus（BPSG）.Then
Lower electrode layer 103 is deposited on one dielectric layer 102 and graphically to form connected vibrating membrane 103a and the first lead division.Vibrating membrane
103a is circle, and the first lead division can be elongated rectangle.Lower electrode layer material is conductive material, can be the gold such as Al, W, Cu
The polysilicon for belonging to or adulterating.Later, second dielectric layer is deposited on patterned lower electrode layer 103 and first medium layer 102
102’.Second dielectric layer 102 ' is as the sacrificial layer material between MEMS microphone defect monitoring structure vibrating membrane and back electrode structure
Material, thickness may be defined as the height of air-gap between the vibrating membrane and back electrode structure of final defect monitoring structure.Second is situated between
Matter layer 102 ' equally can be silica, the plasma enhanced chemical vapor deposition of hot oxide growth（PECVD）Method deposition
Non-impurity-doped silica（USG）, p-doped silica（PSG）Or the silica mixed with boron phosphorus（BPSG）.
Then, referring to FIG. 4, second dielectric layer 102 ' is etched, to form multiple grooves.Groove is formed in second medium
Lower electrode layer 103 is not extended in layer 102 '.
Then, as shown in figure 5, deposition upper electrode layer and graphical, the upper electrode layer sink in multiple grooves 106 above-mentioned
Product horizontally outward extends for one layer and from 106 sidewall upper of groove, forms the recessed with hollow portion 104a of multiple concave shapes
Structure 104, it is disconnected from others between these concave configurations 104.Patterned upper electrode layer also defines multiple second and draws
Portion corresponds connected and draws each concave configuration 104 respectively at these concave configurations 104.In addition, follow-up in order to be formed
Release aperture for carrying out release process, when graphical upper electrode layer can define sizable through upper with release aperture simultaneously
The through-hole 107 of electrode layer, the through-hole（Release aperture）1007 bottoms extend to second dielectric layer 102 ', thus can be in subsequent step
Release process is carried out by the release aperture.
Later, as shown in fig. 6, deposition third dielectric layer 102 ' ' and graphical so that the third dielectric layer 102 ' ' is filled
In the concave configuration 104 of concave shape.If it should be noted that form through-hole 107 in abovementioned steps, third dielectric layer
102 ' ' it to be equally filled in the through-hole 107 as release aperture.Third dielectric layer 102 ' ' equally can be hot oxide growth
Silica, plasma enhanced chemical vapor deposition（PECVD）The non-impurity-doped silica of method deposition（USG）, p-doped oxidation
Silicon（PSG）Or the silica mixed with boron phosphorus（BPSG）.
With continued reference to FIG. 7, depositing insulating layer 106 is simultaneously graphical on above structure so that exhausted on third dielectric layer
Edge layer, which is etched, to be removed and exposes third dielectric layer 102 ' '.In the etching process, third dielectric layer 102 ' ' also can be used as
Etching stop layer.Insulating layer 105 can be divided into main part 105a and support portion, and main part 105a surrounds these concave configurations 104, branch
Support part then by upper electrode layer or itself is supported in second dielectric layer 102 '.The material of insulating layer 105 can be silicon nitride
Or other insulating materials, the shape of main part 105a can be round.
Then the third dielectric layer 102 ' ' that etching removal exposes as shown in Figure 8, in insulating layer main part 105a
Multiple trepannings 108 for exposing concave configuration 104 are formed, the part that 104 sidewall upper of concave configuration horizontally outward extends is located at
Below these 108 peripheries of trepanning.At this point, insulating layer main part 105a and multiple concave configuration 105a constitutes MEMS microphone defect
The back electrode structure of monitoring structure.
In above-mentioned manufacturing step, release aperture 107 can also be formed in a insulating layer.Specifically, it is to insulate in deposition
In layer and patterned step, etch to form bottom and extend to second dielectric layer in position of the main part in addition to third dielectric layer
Release aperture 107.
Again referring to FIG. 9, being patterned to the back side of substrate 101, to form the cavity 110 through substrate.It is specific next
It says, one layer of protection materials being easily removed is coated first above above structure, the front protecting of completed structure is got up,
The region etch for corresponding to vibrating membrane at the back side of substrate 101 later goes out cavity 110, removes protection materials later.Wherein etch chamber
The step of body include by substrate back upward；It overleaf coats photoresist and carries out exposed and developed；Use deep silicon etching equipment
It performs etching so that the silicon of substrate exposure position is removed completely；Remove photoresist etc..Cavity 110 is cylindrical or cone
Cavity, top should be located at vibrating membrane 103a area insides lower section.Protection materials can be photoresist or blue film（blue
tape）Deng.Further include the step that electrical connection is formed in the first lead division and the second lead division before the step of forming cavity 110
Suddenly（Do not show in figure）, the present invention is to the generation type that is electrically connected on lead division and is not limited, such as can pass through and form bottom
Portion extends to the contact hole of the first lead division and the second lead division, and exposes the first lead division and the second lead division；Root later
Material according to upper/lower electrode layer is the polysilicon or metal of doping, and electrode metal is formed on the first lead division and the second lead division
Liner is directly drawn lead division as liner, to form electrical connection.
Finally, it is carried out with the release process such as wet corrosion technique or gaseous corrosion technique by release aperture 107 and cavity
Second dielectric layer 102 ' above cavity is removed with first medium layer 102, is ultimately formed as shown in Figure 1 by release respectively
MEMS microphone defect monitoring structure.Wet etching liquid for release is, for example, HF solution or hydrogen fluoride HF and ammonium fluoride
The mixed solution BOE of NH4F.After second dielectric layer 102 ' above cavity removes, shape between vibrating membrane 103a and back electrode structure
At air-gap 111.The support section of insulating layer and upper electrode layer below are propped up by the second dielectric layer 102 ' not removed
On lower electrode layer 103, lower electrode layer 103 is then supported on substrate by the first medium layer 102 not removed for support.It is multiple recessed
The bottom of structure 104 forms multiple capacity plate antennas with vibrating membrane 103a, and the capacitance of these capacity plate antennas is measured by lead division
Value, so that it may obtain the flexural deformation situation of vibrating membrane different zones under vibrational state.
On the other hand, it is the litho machine by 4 times or 5 times projection multiplying powers in the manufacturing method of traditional monitoring structure by photoetching
4~5 times of pattern reduction in version is exposed to an exposure field of silicon chip, and entire silicon chip litho pattern is realized through multiple exposure
Change, the problem of chip failing excessive cost as monitoring structure rises in silicon chip can be caused in this way.For this purpose, lacking in the present invention
Sunken monitoring structure is to be exposed and be formed in the certain chip of entire silicon chip by using one times of reticle.Specifically,
One times of reticle is all made of in each step of monitoring structure manufacturing method, the graphics chip of reticle corresponds to entire silicon chip
Graphics chip, exposure range also correspond to entire silicon chip, therefore a system of entire silicon chip can be completed by single exposure
Make the photolithography patterning of step.In the graphics chip of each reticle, the certain chip position that can correspond to silicon chip is set as
The figure of the monitoring structure of the present invention is tied in specific 5 chip positions of entire silicon chip for manufacturing monitoring as shown in Figure 10
Structure, it is chip failing thus there was only the chip of this 5 positions, effectively prevents cost increase.
In conclusion compared with prior art, MEMS microphone defect monitoring structure provided by the present invention can pass through electricity
Method carries out the process monitoring of vibrating membrane, and it is each only need to can to assess vibrating membrane by the capacitance of each capacity plate antenna of test
The different distortion situation in different location/region, the not vibrated film size limitation of defect monitoring structure of the invention, more simple side
Just.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, it is not limited to the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention
Several changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (10)
1. a kind of defect monitoring structure of MEMS microphone, which is characterized in that including：
Substrate, with cavity；
First medium layer is formed in the substrate top surface, has the through-hole communicated with the cavity；
Lower electrode layer, including vibrating membrane and the first lead division for being attached thereto, the vibrating membrane are located at the top of the through-hole；
Second dielectric layer is located at the vibrating membrane with first medium layer and the lower electrode layer top of exterior domain；
The upper electrode layer and insulating layer being sequentially located in the second dielectric layer, the insulating layer have main part, the main body
Multiple trepannings are formed in portion, the upper electrode layer includes the second lead division and formed below the trepanning multiple towards institute
The concave configuration with hollow portion of vibrating membrane extension is stated, the concave configuration and the main part of the insulating layer constitute back electrode
Structure；The section of the wherein described concave configuration is concave shape, and bottom is parallel with the vibrating membrane；The multiple concave configuration is mutual
It is not attached to, and is drawn respectively by multiple second lead divisions；The bottom of the multiple concave configuration and the vibrating membrane shape
At multiple capacity plate antennas；
Air-gap is formed between the vibrating membrane and the back electrode structure；And
Release aperture is formed in the back electrode structure, is connected to the air-gap.
2. the defect monitoring structure of MEMS microphone as described in claim 1, which is characterized in that the release aperture is formed in institute
In the main part for stating concave configuration and/or the insulating layer.
3. the defect monitoring structure of MEMS microphone as described in claim 1, which is characterized in that the upper electrode layer and described
The material of lower electrode layer is metal or the polysilicon of doping.
4. the defect monitoring structure of MEMS microphone as described in claim 1, which is characterized in that the material of the insulating layer is
The material of silicon nitride, the first medium layer and second dielectric layer is silica.
5. the defect monitoring structure of MEMS microphone as described in claim 1, which is characterized in that the defect monitoring structure is logical
It crosses and is exposed and is formed in the certain chip of entire silicon chip using one times of reticle, the graphics chip of one times of reticle
Corresponding to the graphics chip of entire silicon chip.
6. a kind of manufacturing method of the defect monitoring structure of MEMS microphone, which is characterized in that include the following steps：
First medium layer, patterned lower electrode layer and second dielectric layer are sequentially formed on substrate；The lower electrode layer definition
The first lead division for going out vibrating membrane and being connected with the vibrating membrane；
The second dielectric layer is etched to form multiple grooves in the second dielectric layer；
Deposit upper electrode layer and graphical on above structure, the upper electrode layer defines multiple to be deposited as in the trench
One layer and the concave configuration with hollow portion that horizontally outward extends from the trenched side-wall upper end and with it is the multiple recessed
Structure corresponds to connected multiple second lead divisions；The section of the concave configuration is concave shape, and the multiple concave configuration is mutual
It is not attached to；
Deposition third dielectric layer is simultaneously graphical, and the third dielectric layer is made to be only filled with the hollow portion in the multiple concave configuration
It is interior；
The depositing insulating layer and graphical on above structure, removes the insulating layer on the third dielectric layer, the insulation
Layer has the main part for surrounding the third dielectric layer；
Etching removes the third medium and exposes opening for the multiple concave configuration to be formed in the insulating layer main part
Hole；The main part of the insulating layer forms back electrode structure with the multiple concave configuration；
The release aperture that multiple bottoms extend to the second dielectric layer is formed in the back electrode structure；
The cavity through the substrate is formed, the vibrating membrane is located at the top of the cavity with the lower section of inner region；And
Release process is carried out by the cavity and the release aperture, removes the first medium layer above the cavity and the
Second medium layer, the air-gap formed between the back electrode structure and the vibrating membrane, the bottom of the multiple concave configuration with
The vibrating membrane forms multiple capacity plate antennas.
7. the manufacturing method of the defect monitoring structure of MEMS microphone as claimed in claim 6, which is characterized in that in the back of the body
The step of multiple bottoms extend to the release aperture of the second dielectric layer is formed in electrode structure is：
It is simultaneously graphical to deposit upper electrode layer, the upper electrode layer defines the multiple concave configuration and the multiple second draws
Go out portion, and forms through-hole in at least partly described concave configuration using as the release aperture；And/or
The release aperture is etched in the main part of the insulating layer.
8. the manufacturing method of the defect monitoring structure of MEMS microphone as claimed in claim 6, which is characterized in that described to power on
The material of pole layer and the lower electrode layer is metal or the polysilicon of doping.
9. the manufacturing method of the defect monitoring structure of MEMS microphone as claimed in claim 6, which is characterized in that the insulation
Material is silicon nitride, and the material of the first medium layer is silica.
10. the manufacturing method of the defect monitoring structure of MEMS microphone as claimed in claim 6, which is characterized in that described to lack
Sunken monitoring structure is formed in the certain chip of entire silicon chip, carries out multiple photoetching used by each step of the manufacturing method
Version is one times of reticle, and the graphics chip of one times of reticle corresponds to the graphics chip of entire silicon chip.
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| CN105502277A (en) * | 2014-09-24 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Micro electro mechanical system (MEMS) microphone, manufacturing method thereof and electronic device |
| CN104507014B (en) * | 2014-12-26 | 2018-08-28 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone and its manufacturing method with fold-type vibrating membrane |
| DE102017102190B4 (en) * | 2017-02-03 | 2020-06-04 | Infineon Technologies Ag | Membrane components and method for forming a membrane component |
| CN108100988A (en) * | 2017-12-19 | 2018-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | Silicon chip carries on the back chamber lithographic method and silicon wafer devices |
| CN111918192B (en) * | 2020-08-19 | 2024-06-14 | 杭州士兰微电子股份有限公司 | MEMS microphone |
| CN117376796B (en) * | 2023-12-08 | 2024-02-06 | 瑞声光电科技(常州)有限公司 | Preparation method of microelectromechanical microphone |
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| CN101389155A (en) * | 2007-09-12 | 2009-03-18 | 美律实业股份有限公司 | Silicon crystal capacitor microphone |
| CN103139691A (en) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
| CN103402163A (en) * | 2013-07-26 | 2013-11-20 | 歌尔声学股份有限公司 | Shock-resistant silicon-based micro-electro mechanical system (MEMS) microphone and manufacturing method thereof |
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