CN103606583A - Upconversion amorphous silicon solar cell with one-dimensional photonic crystal and manufacturing process thereof - Google Patents
Upconversion amorphous silicon solar cell with one-dimensional photonic crystal and manufacturing process thereof Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 47
- 239000004038 photonic crystal Substances 0.000 title abstract description 33
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000003475 lamination Methods 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims description 23
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 19
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 19
- -1 rare earth ion Chemical class 0.000 claims description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000085 borane Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000005984 hydrogenation reaction Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 230000003252 repetitive effect Effects 0.000 claims 1
- 229920005573 silicon-containing polymer Polymers 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229920001577 copolymer Polymers 0.000 abstract 1
- 239000010408 film Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/52—PV systems with concentrators
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明公开了一种具有一维光子晶体的上转换非晶硅太阳电池，其结构由上往下依次为非晶硅太阳电池、乙烯-醋酸乙烯共聚物EVA、上转换器、乙烯-醋酸乙烯共聚物EVA、一维光子晶体反射镜，其制造工艺包括制备非晶硅太阳电池、制备上转换器、制备一维光子晶体反射镜、叠层和层压几个步骤。本发明可以增加非晶硅太阳电池对近红外光子的利用，提高太阳电池的短路电流，进而提高太阳电池的转换效率。一维光子晶体背反射镜可以增强反射效果，减少光子的透射损失，有利于提高电池的转换效率。同时一维光子晶体取代金属反射镜，可以降低材料成本，可利用非晶硅太阳电池的生产设备进行制备，无需增加设备成本。
The invention discloses an up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal. Copolymer EVA, one-dimensional photonic crystal mirror, its manufacturing process includes several steps of preparing amorphous silicon solar cell, preparing up-converter, preparing one-dimensional photonic crystal mirror, lamination and lamination. The invention can increase the utilization of near-infrared photons by the amorphous silicon solar cell, increase the short-circuit current of the solar cell, and further improve the conversion efficiency of the solar cell. The one-dimensional photonic crystal back reflector can enhance the reflection effect, reduce the transmission loss of photons, and help improve the conversion efficiency of the battery. At the same time, the one-dimensional photonic crystal replaces the metal mirror, which can reduce the cost of materials, and can be prepared by using the production equipment of amorphous silicon solar cells without increasing the cost of equipment.
Description
技术领域 technical field
本发明涉及一种太阳能电池，特别涉及一种同时结合和上转换技术与一维光子晶体全反射技术的新型太阳电池的结构和制备方法。 The present invention relates to a solar cell, in particular to a structure and preparation method of a new type of solar cell that simultaneously combines and up-conversion technology and one-dimensional photonic crystal total reflection technology.
背景技术 Background technique
当前太阳能发电技术已经得到了一定程度的应用与发展，但是并没有大规模普及，其中一个重要的原因是太阳能电池的成本过高，为降低太阳电池的成本，一方面要减少太阳电池的生产制造成本。另一方面要提高太阳电池的转换效率。 At present, solar power generation technology has been applied and developed to a certain extent, but it has not been popularized on a large scale. One of the important reasons is that the cost of solar cells is too high. In order to reduce the cost of solar cells, on the one hand, it is necessary to reduce the production of solar cells. cost. On the other hand, it is necessary to improve the conversion efficiency of solar cells.
非晶硅太阳电池属于薄膜电池，其厚度只有0.2至0.4微米。晶硅太阳电池的厚度为200微米左右，前者可以大大节省材料成本。然而前者的转换效率没有后者高，限制了其应用和发展。 Amorphous silicon solar cells are thin-film cells with a thickness of only 0.2 to 0.4 microns. The thickness of crystalline silicon solar cells is about 200 microns, and the former can greatly save material costs. However, the conversion efficiency of the former is not as high as that of the latter, which limits its application and development.
发明内容 Contents of the invention
发明目的：本发明的目的是为了解决现有技术中的不足，提供一种转换效率高、节省材料的具有一维光子晶体的上转换非晶硅太阳电池及其制造工艺。 Purpose of the invention: The purpose of the invention is to solve the deficiencies in the prior art, and provide an up-conversion amorphous silicon solar cell with one-dimensional photonic crystal and its manufacturing process with high conversion efficiency and material saving.
技术方案：本发明所述的一种具有一维光子晶体的上转换非晶硅太阳电池，其结构由上往下依次为非晶硅太阳电池、乙烯-醋酸乙烯共聚物EVA、上转换器、乙烯-醋酸乙烯共聚物EVA、一维光子晶体反射镜。 Technical solution: An up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal according to the present invention, its structure from top to bottom is an amorphous silicon solar cell, ethylene-vinyl acetate copolymer EVA, an up-converter, Ethylene-vinyl acetate copolymer EVA, one-dimensional photonic crystal mirror.
作为优选，所述非晶硅太阳电池包括玻璃衬底、透明导电电极（TCO）、窗口层p层、本征层i层和n层。 Preferably, the amorphous silicon solar cell includes a glass substrate, a transparent conductive electrode (TCO), a window layer p layer, an intrinsic layer i layer and n layer.
作为优选，所述上转换器是由卤化物、氧化物、或者硫化物等粉末状或者玻璃态的含有稀土离子掺杂的物质制成。 Preferably, the up-converter is made of powdery or glassy rare earth ion-doped substances such as halides, oxides, or sulfides.
本发明还公开了一种具有一维光子晶体的上转换非晶硅太阳电池的制造工艺： The invention also discloses a manufacturing process of an up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal:
（1）制备非晶硅太阳电池： (1) Preparation of amorphous silicon solar cells:
1）采用常规工艺，利用直流磁控溅射技术制备掺铝氧化锌透明导电前电极； 1) Using conventional technology, using DC magnetron sputtering technology to prepare aluminum-doped zinc oxide transparent conductive front electrode;
2）利用PECVD依次沉积非晶硅太阳电池的p层、i层、n层，所用气源为硅烷与磷烷、硅烷与氢气、硅烷与硼烷； 2) Use PECVD to sequentially deposit the p layer, i layer, and n layer of amorphous silicon solar cells, and the gas sources used are silane and phosphine, silane and hydrogen, silane and borane;
3）利用直流磁控溅射技术制备掺铝氧化锌透明导电后电极； 3) Prepare aluminum-doped zinc oxide transparent conductive back electrode by DC magnetron sputtering technology;
（2）制备上转换器： (2) Preparation of the up-converter:
1）采用水热法合成上转换材料，上转换由基质和和掺杂在其中三价稀土离子组成，稀土离子为材料的发光中心； 1) The up-conversion material is synthesized by the hydrothermal method. The up-conversion material is composed of a matrix and doped with trivalent rare earth ions, and the rare earth ions are the luminescent centers of the material;
2）将所得上转换材料与固化材料聚二甲基硅氧烷混合均匀呈胶体状，使用匀胶机采用旋涂的方式制备出薄层状的上转换器； 2) Mix the obtained up-conversion material with the curing material polydimethylsiloxane evenly to form a colloid, and use a homogenizer to prepare a thin-layer up-converter by spin coating;
（3）制备一维光子晶体反射镜： (3) Preparation of one-dimensional photonic crystal mirror:
1）采用PECVD技术沉积一层高折射率的氮化硅薄膜，所用气源为氨气、硅烷； 1) Using PECVD technology to deposit a layer of silicon nitride film with high refractive index, the gas source used is ammonia gas and silane;
2）采用PECVD技术沉积一层低折射率的氢化非晶硅薄膜，所用气源为硅烷与氢气； 2) Using PECVD technology to deposit a layer of hydrogenated amorphous silicon film with low refractive index, the gas source used is silane and hydrogen;
3）重复过程1）和过程2），形成一维光子晶体； 3) Repeat process 1) and process 2) to form a one-dimensional photonic crystal;
（4）叠层： (4) Lamination:
1）根据电池的面积剪裁合适大小的EVA； 1) Cut the EVA of appropriate size according to the area of the battery;
2）按照顺序依从下到上依次将一维光子晶体反射镜、EVA、上转换器、EVA、非晶硅太阳电池进行叠层； 2) Laminate the one-dimensional photonic crystal mirror, EVA, up-converter, EVA, and amorphous silicon solar cells sequentially from bottom to top;
（5）层压：叠层后放入层压机中将进行层压，将非晶硅太阳电池、上转换器、一维光子晶体反射镜封装在一起形成具有一维光子晶体反射镜的上转换太阳电池。 (5) Lamination: After stacking, put them into a laminator for lamination, and package the amorphous silicon solar cell, up-converter, and one-dimensional photonic crystal mirror together to form an upper solar cell with a one-dimensional photonic crystal mirror. Convert solar cells.
作为优选，所述步骤导电前电极方块电阻为10Ω，厚度为450-500nm； As a preference, the sheet resistance of the electrode before conduction in the step is 10Ω, and the thickness is 450-500nm;
作为优选，所述氮化硅薄膜的折射率为1.3-2.1，厚度为35-45nm。 Preferably, the silicon nitride thin film has a refractive index of 1.3-2.1 and a thickness of 35-45 nm.
作为优选，所述氢化非晶硅薄膜的折射率为3.2-4.2，膜厚为70-80nm。 Preferably, the hydrogenated amorphous silicon thin film has a refractive index of 3.2-4.2 and a film thickness of 70-80 nm.
有益效果：本发明一种具有一维光子晶体的上转换非晶硅太阳电池，将上转换技术与光子晶体反射镜的全反射技术结合在一起应用于非晶硅太阳电池，上转换器的应用可以增加非晶硅太阳电池对近红外光子的利用，提高太阳电池的短路电流，进而提高太阳电池的转换效率。一维光子晶体背反射镜可以增强反射效果，减少光子的透射损失，有利于提高电池的转换效率。同时一维光子晶体取代金属反射镜，可以降低材料成本，可利用非晶硅太阳电池的生产设备进行制备，无需增加设备成本。 Beneficial effects: the present invention has an up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal, which combines the up-conversion technology with the total reflection technology of the photonic crystal mirror and applies it to the amorphous silicon solar cell, the application of the up-converter It can increase the utilization of near-infrared photons by the amorphous silicon solar cell, increase the short-circuit current of the solar cell, and further improve the conversion efficiency of the solar cell. The one-dimensional photonic crystal back reflector can enhance the reflection effect, reduce the transmission loss of photons, and help improve the conversion efficiency of the battery. At the same time, the one-dimensional photonic crystal replaces the metal mirror, which can reduce the cost of materials, and can be prepared by using the production equipment of amorphous silicon solar cells without increasing the cost of equipment.
附图说明 Description of drawings
图1为本发明具有一维光子晶体的上转换非晶硅太阳电池的结构示意图。 FIG. 1 is a schematic structural view of an up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal according to the present invention.
图2为本发明反射镜的反射图谱图。 Fig. 2 is a reflection spectrum diagram of the reflector of the present invention.
具体实施方式 Detailed ways
如图1和图2所示的一种具有一维光子晶体的上转换非晶硅太阳电池，其结构由上往下依次为非晶硅太阳电池1、乙烯-醋酸乙烯共聚物EVA2、上转换器3、乙烯-醋酸乙烯共聚物EVA2、一维光子晶体反射镜4，其中非晶硅太阳电池1包括玻璃衬底、透明导电电极（TCO）、窗口层p层、本征层i层和n层，上转换器是由卤化物、氧化物、或者硫化物等粉末状或者玻璃态的含有稀土离子掺杂的物质制成。
As shown in Figure 1 and Figure 2, an up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal, its structure from top to bottom is amorphous silicon
本发明还公开了一种具有一维光子晶体的上转换非晶硅太阳电池的制造工艺： The invention also discloses a manufacturing process of an up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal:
（1）制备非晶硅太阳电池： (1) Preparation of amorphous silicon solar cells:
1）采用常规工艺，利用直流磁控溅射技术制备掺铝氧化锌透明导电前电极，电极方块电阻为10Ω，厚度为450-500nm； 1) Using conventional technology, using DC magnetron sputtering technology to prepare aluminum-doped zinc oxide transparent conductive front electrode, the electrode square resistance is 10Ω, and the thickness is 450-500nm;
3）利用PECVD依次沉积非晶硅太阳电池的p层、i层、n层，所用气源为硅烷与磷烷、硅烷与氢气、硅烷与硼烷； 3) Use PECVD to sequentially deposit the p layer, i layer, and n layer of amorphous silicon solar cells, and the gas sources used are silane and phosphine, silane and hydrogen, silane and borane;
3）利用直流磁控溅射技术制备掺铝氧化锌透明导电后电极； 3) Prepare aluminum-doped zinc oxide transparent conductive back electrode by DC magnetron sputtering technology;
（2）制备上转换器： (2) Preparation of the up-converter:
1）采用水热法合成上转换材料，上转换由基质和和掺杂在其中三价稀土离子组成，稀土离子为材料的发光中心，其作用是实现对光子能量的转换，吸收两个或者以上的低能光子辐射出来一个高能光子。一般选用稀土Er3+作为掺杂离子。基质的作用是为稀土离子提供晶体场，基质按照其化学成分划分可以是氯化物、氧化物或者硫化物，目前多采用氯化物因为具有较小的声子能量； 1) The up-conversion material is synthesized by the hydrothermal method. The up-conversion material is composed of a matrix and doped with trivalent rare earth ions. The rare earth ion is the luminescent center of the material. Its function is to realize the conversion of photon energy and absorb two or more A low-energy photon radiates a high-energy photon. Generally, rare earth Er 3+ is selected as the dopant ion. The role of the matrix is to provide a crystal field for rare earth ions. According to its chemical composition, the matrix can be chloride, oxide or sulfide. Currently, chloride is mostly used because it has a smaller phonon energy;
2）将所得上转换材料与固化材料聚二甲基硅氧烷混合均匀呈胶体状，使用匀胶机采用旋涂的方式制备出薄层状的上转换器； 2) Mix the obtained up-conversion material with the curing material polydimethylsiloxane evenly to form a colloid, and use a homogenizer to prepare a thin-layer up-converter by spin coating;
（3）制备一维光子晶体反射镜： (3) Preparation of one-dimensional photonic crystal mirror:
1）采用PECVD技术沉积一层高折射率的氮化硅薄膜，折射率为1.3-2.1，厚度为35-45nm，所用气源为氨气、硅烷； 1) Using PECVD technology to deposit a layer of silicon nitride film with a high refractive index, the refractive index is 1.3-2.1, and the thickness is 35-45nm. The gas source used is ammonia and silane;
3）采用PECVD技术沉积一层低折射率的氢化非晶硅薄膜，折射率为3.2-4.2，膜厚为70-80nm，所用气源为硅烷与氢气； 3) Using PECVD technology to deposit a layer of hydrogenated amorphous silicon film with a low refractive index, the refractive index is 3.2-4.2, the film thickness is 70-80nm, and the gas source used is silane and hydrogen;
3）重复过程1）和过程2），形成一维光子晶体； 3) Repeat process 1) and process 2) to form a one-dimensional photonic crystal;
（4）叠层： (4) Lamination:
1）根据电池的面积剪裁合适大小的EVA； 1) Cut the EVA of appropriate size according to the area of the battery;
2）按照顺序依从下到上依次将一维光子晶体反射镜、EVA、上转换器、EVA、非晶硅太阳电池进行叠层； 2) Laminate the one-dimensional photonic crystal mirror, EVA, up-converter, EVA, and amorphous silicon solar cells sequentially from bottom to top;
（5）层压：叠层后放入层压机中将进行层压，将非晶硅太阳电池、上转换器、一维光子晶体反射镜封装在一起形成具有一维光子晶体反射镜的上转换太阳电池。 (5) Lamination: After stacking, put them into a laminator for lamination, and package the amorphous silicon solar cell, up-converter, and one-dimensional photonic crystal mirror together to form an upper solar cell with a one-dimensional photonic crystal mirror. Convert solar cells.
本发明一种具有一维光子晶体的上转换非晶硅太阳电池，将上转换技术与光子晶体反射镜的全反射技术结合在一起应用于非晶硅太阳电池，上转换器的应用可以增加非晶硅太阳电池对近红外光子的利用，提高太阳电池的短路电流，进而提高太阳电池的转换效率。一维光子晶体背反射镜可以增强反射效果，减少光子的透射损失，有利于提高电池的转换效率。同时一维光子晶体取代金属反射镜，可以降低材料成本，可利用非晶硅太阳电池的生产设备进行制备，无需增加设备成本。 The present invention is an up-conversion amorphous silicon solar cell with a one-dimensional photonic crystal. The up-conversion technology and the total reflection technology of the photonic crystal mirror are combined and applied to the amorphous silicon solar cell. The application of the up-converter can increase the non-crystalline silicon solar cell. The use of near-infrared photons by crystalline silicon solar cells increases the short-circuit current of the solar cell, thereby improving the conversion efficiency of the solar cell. The one-dimensional photonic crystal back reflector can enhance the reflection effect, reduce the transmission loss of photons, and help improve the conversion efficiency of the battery. At the same time, the one-dimensional photonic crystal replaces the metal mirror, which can reduce the cost of materials, and can be prepared by using the production equipment of amorphous silicon solar cells without increasing the cost of equipment.
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