CN103605248B - Based on the Enhancement Method of the frequency multiplication of periodic polarized lithium niobate - Google Patents
Based on the Enhancement Method of the frequency multiplication of periodic polarized lithium niobate Download PDFInfo
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 31
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 6
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Abstract
一种光信息处理技术领域的基于周期性极化铌酸锂的倍频的增强方法,首先对铌酸锂晶体进行室温电场极化,在晶体的+Z面上负畴区域改变电畴极化方向,在晶体的Y向两侧进行真空镀膜溅射电极;然后对晶体进行寻常光照射的同时用高压源给铌酸锂晶体的Y向两侧加电压,通过产生的慢光效应实现寻常光倍频的增强。本发明首创将准相位匹配的技术(QPM)和慢光效应所引起的有效光功率的增大结合起来。
A frequency-doubling enhancement method based on periodically polarized lithium niobate in the field of optical information processing technology. Firstly, the lithium niobate crystal is subjected to electric field polarization at room temperature, and the electric domain polarization is changed in the negative domain region on the +Z surface of the crystal. direction, vacuum coating sputtering electrodes are carried out on both sides of the Y direction of the crystal; then the crystal is irradiated with ordinary light and at the same time, a high voltage source is used to apply voltage to both sides of the Y direction of the lithium niobate crystal, and the ordinary light is realized through the slow light effect generated. Multiplier enhancement. The present invention is the first to combine the technology of quasi-phase matching (QPM) with the increase of effective optical power caused by the slow light effect.
Description
技术领域technical field
本发明涉及的是一种光信息处理技术领域的方法,具体涉及一种基于周期性极化铌酸锂的倍频的增强方法。The invention relates to a method in the technical field of optical information processing, in particular to a frequency doubling enhancement method based on periodically polarized lithium niobate.
背景技术Background technique
自激光技术诞生以来,非线性频率转换技术和慢光技术一直是研究的热点。基于周期极化非线性晶体的准相位匹配技术(QPM)是拓宽激光可调谐波长最有效、最常用的办法之一。常用的周期极化非线性晶体有:LiNbO3(PPLN)、LiTaO3及KTP等。准相位匹配技术即人为的在非线性晶体中制备周期性极化反转光栅,对晶体的非线性系数进行周期性调制,从而满足相位匹配的条件。在频率转换技术中,倍频(SHG)技术应用最为广泛。LiNbO3晶体为负单轴晶体,有两种倍频方式,0型倍频和I型倍频。0型倍频是指参与倍频过程的基频光和倍频光都是在晶体中以非寻常光(E光,ExtraordinaryLight)入射或传播的;I型倍频是指参与倍频过程的基频光以寻常光(O光,OrdinaryLight),倍频光以非寻常光入射或传播的。0型倍频使用的非线性系数为d31,倍频效率高但是带宽窄;I型倍频使用的非线性系数为d33,倍频带宽宽,但是效率低。两种倍频产生的都是非寻常光。慢光效应作为光子晶体一个很重要的特性,可以用于实现时间延迟、增加相移以及增强非线性效应等。Since the birth of laser technology, nonlinear frequency conversion technology and slow light technology have been research hotspots. The quasi-phase matching technique (QPM) based on periodically poled nonlinear crystals is one of the most effective and commonly used methods to broaden the tunable wavelength of lasers. Commonly used periodically poled nonlinear crystals are: LiNbO 3 (PPLN), LiTaO 3 and KTP. The quasi-phase-matching technology artificially prepares a periodically polarized inversion grating in a nonlinear crystal, and periodically modulates the nonlinear coefficient of the crystal to meet the conditions of phase matching. Among frequency conversion technologies, frequency multiplication (SHG) technology is most widely used. LiNbO 3 crystal is a negative uniaxial crystal, and there are two frequency doubling methods, 0-type frequency doubling and I-type frequency doubling. Type 0 frequency doubling means that both the fundamental frequency light and the frequency doubled light participating in the frequency doubling process are incident or propagated in the crystal as extraordinary light (E light, Extraordinary Light); type I frequency doubling refers to the fundamental frequency light participating in the frequency doubling process. Frequency light is incident or propagated by ordinary light (O light, Ordinary Light), and double frequency light is incident or transmitted by extraordinary light. The non-linear coefficient used by type 0 multiplier is d 31 , which has high multiplication efficiency but narrow bandwidth; the non-linear coefficient used by type I multiplier is d 33 , which has wide multiplication bandwidth but low efficiency. Both frequency doublings produce extraordinary light. As a very important characteristic of photonic crystals, the slow light effect can be used to realize time delay, increase phase shift and enhance nonlinear effects, etc.
经对现有技术的检索发现,2007年F.LU等人在《ElectronicsLetters》(43,2007)上“Broadcastwavelengthconversionbasedoncascaded?(2)nonlinearityinMgO-dopedperiodicallypoledLiNbO3”(《基于周期性极化铌酸锂晶体的二阶非线性系数多波长转换器》)一文,其中采用了非线性的倍频过程。虽然采用了准位相匹配技术(QPM),但是同时,由于倍频非线性系数不大,需要很高的泵浦光功率才可以得到可观的转换效率。After searching the existing technology, it was found that in 2007, F.LU et al. published "Broadcast wavelength conversion based on cascaded? (2) nonlinearity in MgO-doped periodically poled LiNbO3" in "Electronics Letters" (43, 2007) ("Second-order based on periodically poled lithium niobate crystal Nonlinear Coefficient Multiwavelength Converter"), which uses a nonlinear frequency doubling process. Although the quasi-phase matching technology (QPM) is adopted, at the same time, due to the small nonlinear coefficient of frequency doubling, a high pump optical power is required to obtain considerable conversion efficiency.
2010年KunLiu等人在《AppliedPhysicsLetters》(97,2010)上发表了“Activecontrolofgroupvelocitybyuseoffoldeddielectricaxesstructures”(《利用层叠介电轴结构的群速度调控》)一文,该文介绍了利用在周期性畴反转铌酸锂晶体PPLN内,通过外加横向Y向电场使得晶体的正畴和负畴的光轴形成一个周期性摇摆,从而使得经过每一个畴之后的出射光的偏振方向都发生改变。在经历合适的N个畴之后,出射光的偏振方向与入射时垂直,从而形成禁带。文章中还表明,利用这个禁带,可以形成较慢的群速度。In 2010, Kun Liu et al. published the article "Active control of group velocity by use off folded dielectric axes structures" ("Group Velocity Control Using Stacked Dielectric Axis Structure") in "Applied Physics Letters" (97, 2010), which introduced the use of periodic domain inversion lithium niobate In the crystal PPLN, the optical axes of the positive and negative domains of the crystal form a periodic swing by applying a transverse Y-direction electric field, so that the polarization direction of the outgoing light after passing through each domain changes. After passing through the appropriate N domains, the polarization direction of the outgoing light is perpendicular to that of the incident light, thus forming a forbidden band. It is also shown in the article that by utilizing this forbidden band, slower group velocities can be formed.
对比上述准相位匹配频率转换技术及群速度控制方法参考文献,本专利提出制作一种周期性结构,外加电压构造一维电光光子晶体,同时实现上述两种基于准位相匹配的倍频方式和群速度调控形成的慢光效应,以达到增强二阶非线性效应的方法设计,解决O光倍频效率低和E光倍频带宽窄的问题。Compared with the above references of quasi-phase matching frequency conversion technology and group velocity control method, this patent proposes to make a periodic structure and apply a voltage to construct a one-dimensional electro-optic photonic crystal, and realize the above two frequency doubling methods and group velocity based on quasi-phase matching at the same time. The slow light effect formed by speed regulation is designed to enhance the second-order nonlinear effect, and solve the problems of low frequency doubling efficiency of O light and narrow bandwidth of E light frequency doubling.
经过对现有技术的检索发现,中国专利文献号CN102338966A,公开日2012-02-01,公开了一种偏振无关的准位相匹配倍频器,该技术包括在光路中依次摆放的消偏器和第一周期性极化铌酸锂晶体片和第二周期性极化铌酸锂晶体片;其中,所述第一周期性极化铌酸锂晶体片和所述第二周期性极化铌酸锂晶体片光学性能相同,分别为Z向切割的铌酸锂晶体经过室温电场极化制成,所述室温电场极化为在铌酸锂晶体片的+Z面上负畴区域改变电畴极化方向;所述光路的方向为x-y-z坐标系中的x方向;所述第一周期性极化铌酸锂晶体片的c轴沿z方向,所述第二周期性极化铌酸锂晶体片的c轴沿y方向。但该技术的缺陷在于其结构复杂,必须通过两块PPLN晶片才能实现。并且只能达到0型倍频,因为0型倍频带宽较窄且泵浦波长固定,所以倍频光的波长不可调,难以满足现有工业需求。After searching the existing technology, it is found that the Chinese patent document number CN102338966A, the publication date is 2012-02-01, discloses a polarization-independent quasi-phase matching frequency multiplier, which includes depolarizers placed in sequence in the optical path and the first periodically poled lithium niobate crystal plate and the second periodically poled lithium niobate crystal plate; wherein, the first periodically poled lithium niobate crystal plate and the second periodically poled lithium niobate crystal plate The lithium niobate crystal sheets have the same optical properties, and are respectively made of Z-cut lithium niobate crystals subjected to electric field polarization at room temperature. Polarization direction; the direction of the optical path is the x direction in the x-y-z coordinate system; the c-axis of the first periodically poled lithium niobate crystal sheet is along the z direction, and the second periodically poled lithium niobate crystal The c-axis of the slice is along the y-direction. But the defect of this technology is that its structure is complex, and it must be realized through two PPLN chips. And only 0-type frequency doubling can be achieved, because the 0-type frequency doubling bandwidth is narrow and the pump wavelength is fixed, so the wavelength of the frequency doubling light cannot be adjusted, which is difficult to meet the needs of existing industries.
发明内容Contents of the invention
本发明针对现有技术存在的上述不足,提出一种基于周期性极化铌酸锂的倍频的增强方法,基于两种倍频效应,加电压后O光会转为E光,E光的倍频效率远大于O光,同时O光、E光相互耦合可以产生慢光,可以进一步增强倍频。所以可以使O光的倍频效率得到大大的增强。进而通过改变周期性极化铌酸锂晶体的周期和温度,可以改变同时实现O、E光和禁带的波长位置,即可在宽带倍频内调节倍频增强的位置。Aiming at the above-mentioned deficiencies in the prior art, the present invention proposes a frequency doubling enhancement method based on periodically polarized lithium niobate. Based on two frequency doubling effects, O light will be converted to E light after voltage is applied, and E light The frequency doubling efficiency is much higher than that of O light, and the mutual coupling of O light and E light can generate slow light, which can further enhance frequency doubling. Therefore, the frequency doubling efficiency of the O light can be greatly enhanced. Furthermore, by changing the period and temperature of the periodically poled lithium niobate crystal, the wavelength position of simultaneously realizing O, E light and forbidden band can be changed, and the position of frequency doubling enhancement can be adjusted in broadband frequency doubling.
本发明是通过以下技术方案实现的,本发明首先对铌酸锂晶体进行室温电场极化,在晶体的+Z面上负畴区域改变电畴极化方向,在晶体的Y向两侧进行真空镀膜溅射电极;然后对晶体进行寻常光照射的同时用高压源给铌酸锂晶体的Y向两侧加电压,通过产生的慢光效应实现寻常光倍频的增强。The present invention is achieved through the following technical solutions. In the present invention, the room temperature electric field polarization is carried out on the lithium niobate crystal first, and the electric domain polarization direction is changed in the negative domain region on the +Z surface of the crystal, and the vacuum is carried out on both sides of the crystal Y direction. Coating sputtering electrodes; then, while irradiating the crystal with ordinary light, a high-voltage source is used to apply voltage to both sides of the Y side of the lithium niobate crystal, and the frequency multiplication of ordinary light is enhanced through the slow light effect generated.
所述的电场极化所采用的周期通过以下方式得到:The cycle adopted by the electric field polarization is obtained in the following way:
1)确定同时满足准相位匹配条所需要的极化周期Λ,即满足:
2)由于O光宽带倍频不仅要求准相位匹配,还要求群速度匹配,即所求的周期在Λ-λ关系曲线的切点处;因此用matlab软件模拟Λ0、Λ1和Λ2与λ的关系图,可以求得三个周期的交点,交点对应的周期则可以实现O、E光同时倍频和禁带;通过改变温度,可以获得不同的交点;并在某一特定的温度下可以让交点落在Λ1-λ曲线的切点处,此点对应的温度和周期,则可以同时实现O光的宽带倍、E光倍频和禁带,即为本发明所需要的周期和温度。2) Since O optical broadband frequency multiplication requires not only quasi-phase matching, but also group velocity matching, that is, the required period is at the tangent point of the Λ-λ relationship curve; therefore, use matlab software to simulate Λ 0 , Λ 1 and Λ 2 and The relationship diagram of λ can obtain the intersection point of three periods, and the period corresponding to the intersection point can realize simultaneous frequency multiplication and band gap of O and E light; by changing the temperature, different intersection points can be obtained; and at a specific temperature The intersection point can be made to fall on the tangent point of the Λ 1 -λ curve, and the temperature and period corresponding to this point can simultaneously realize the broadband doubling of the O light, the frequency doubling of the E light and the forbidden band, which are the required period and period of the present invention. temperature.
所述的室温电场极化是指:采用室温极化技术,根据得到的周期实现周期性反转,得到周期性极化铌酸锂晶体(PPLN)。The room temperature electric field poling refers to: using room temperature poling technology, realizing periodic reversal according to the obtained period, and obtaining periodically poled lithium niobate crystal (PPLN).
所述的真空镀膜溅射电极是指:采用真空镀膜机采用溅射的方法在周期性极化铌酸锂晶体的Y向两侧镀上电极。The vacuum coating sputtering electrode refers to: using a vacuum coating machine to plate electrodes on both sides of the Y direction of the periodically polarized lithium niobate crystal by sputtering.
所述的寻常光照射是指:通过精确控制环境温度,采用连续可调的激光器中出射基频光,经过偏振分光棱镜(PBS)产生寻常光入射到晶体表面,在高压源给铌酸锂晶体的Y向两侧加电压的同时,对出射的倍频光强度通过光功率计来测量。The ordinary light irradiation refers to: through the precise control of the ambient temperature, the fundamental frequency light is emitted from the continuously adjustable laser, and the ordinary light is incident on the crystal surface through the polarization beam splitter (PBS), and the lithium niobate crystal is fed to the lithium niobate crystal by the high voltage source. While voltage is applied to both sides of Y, the intensity of the outgoing frequency-doubled light is measured by an optical power meter.
所述的激光器的基频光波长为1518-1627nm,通光方向为x方向。The fundamental frequency light wavelength of the laser is 1518-1627nm, and the light passing direction is the x direction.
所述的寻常光倍频的增强是指:采用输出电压不超过10KV的高压源在铌酸锂晶体的Y向加电压,通过产生的慢光效应来增强O光倍频,同时O光也会部分转变为E光,E光的倍频效率远大于O光,所以会进一步提高O光的倍频效率,具体为:当忽略基频光波到倍频光波的转换损耗,可导出倍频增强的最大倍数为:其中:S为慢光增强的倍数,d33为0型倍频是用的非线性系数,d31为I型倍频使用的非线性系数。The enhancement of frequency doubling of ordinary light refers to: using a high voltage source with an output voltage not exceeding 10KV to apply voltage in the Y direction of lithium niobate crystal, and to enhance the frequency doubling of O light through the slow light effect generated, and at the same time, O light will also Partially converted into E light, the frequency doubling efficiency of E light is much greater than that of O light, so the frequency doubling efficiency of O light will be further improved, specifically: when the conversion loss from the fundamental frequency light wave to the frequency doubling light wave is ignored, the frequency doubling enhanced The maximum multiple is: Among them: S is the multiple of slow light enhancement, d 33 is the nonlinear coefficient used for type 0 frequency multiplication, and d 31 is the nonlinear coefficient used for type I frequency multiplication.
技术效果technical effect
与现有技术相比,本发明的技术效果包括:Compared with the prior art, the technical effects of the present invention include:
1、在不改变波长转换输出谱和带宽的前提下,可在宽带中的某个波长附近实现比原倍频方案更高的转换效率。1. On the premise of not changing the wavelength conversion output spectrum and bandwidth, it can achieve higher conversion efficiency than the original frequency doubling scheme near a certain wavelength in the broadband.
2、同过温控炉的温度控制,以及所施加的电压的大小,可以很好地将实现慢的群速度下的倍频过程与铌酸锂晶体本身的O光宽带倍频和E光高效率倍频结合起来。2. With the temperature control of the temperature-controlled furnace and the magnitude of the applied voltage, the frequency doubling process at a slow group velocity can be well combined with the O-light broadband frequency doubling and E-light height of the lithium niobate crystal itself. efficiency multiplier combined.
3、改变周期性极化铌酸锂晶体的周期和温度,可以改变同时实现O、E光和禁带的波长位置,即可在宽带倍频内调节倍频增强的位置,即可以使O光的宽带倍频和E光高效率倍频得到很好的结合。3. Changing the period and temperature of the periodically polarized lithium niobate crystal can change the wavelength position of simultaneously realizing O, E light and band gap, and can adjust the position of frequency doubling enhancement in broadband frequency doubling, which can make O light The broadband frequency doubling and E-light high-efficiency frequency doubling are well combined.
4、可以在弱光条件下实现倍频增强。4. It can achieve frequency multiplication enhancement under low light conditions.
5、可以将慢光增强倍频推广到增强和频、差频、参量振荡等非线性过程。5. Slow light enhanced frequency doubling can be extended to nonlinear processes such as enhanced sum frequency, difference frequency, and parametric oscillation.
6、实现结构简单,只需要一个PPLN的晶片便可以实现倍频增强,可以通过调节电压的大小改变倍频增强的大小。6. The implementation structure is simple, only one PPLN chip is needed to realize the frequency multiplication enhancement, and the magnitude of the frequency multiplication enhancement can be changed by adjusting the voltage.
附图说明Description of drawings
图1为本发明实现增强二阶非线性的一维电光光子晶体的原型器件的结构示意图;Fig. 1 is the structural representation of the prototype device of the one-dimensional electro-optic photonic crystal that realizes the enhanced second-order nonlinearity of the present invention;
图2为所示器件的工作原理图;Figure 2 is a schematic diagram of the working principle of the device shown;
图中:基频光从波长范围可在1518-1627nm范围内调节的可调节激光器输出,经过准直器(Collimator)入射到偏振分光棱镜上,形成寻常光入射到PPLN的表面,PPLN的Y向加电压,精确控制环境的温度,即可在O光的宽带倍频内实现E光倍频和禁带,达到增强O光倍频的效果。倍频光的输出功率用光功率计进行测量。In the figure: the fundamental frequency light is output from an adjustable laser whose wavelength range can be adjusted within the range of 1518-1627nm, and is incident on the polarization beam splitter through the collimator (Collimator), forming ordinary light incident on the surface of the PPLN, and the Y direction of the PPLN Adding voltage and precisely controlling the temperature of the environment can realize E-light frequency doubling and forbidden band within the broadband frequency doubling of O-light, and achieve the effect of enhancing O-light frequency doubling. The output power of the frequency doubled light is measured with an optical power meter.
具体实施方式detailed description
下面对本发明的实施例作详细说明,本实施例在以本发明技术方案为前提下进行实施,给出了详细的实施方式和具体的操作过程,但本发明的保护范围不限于下述的实施例。The embodiments of the present invention are described in detail below. This embodiment is implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following implementation example.
实施例1Example 1
下面结合图1和图2对本发明的实施例做详细说明。Embodiments of the present invention will be described in detail below with reference to FIG. 1 and FIG. 2 .
1)选取一片大小为30×10×0.5mm,即厚度为0.5mm的5%mol掺镁Z切割铌酸锂晶体。晶体的+/-Z均抛光,其中+Z面与水平面平行并面向Z轴正方向,-Z面与水平面平行并面向Z轴负方向。1) Select a piece of 5%mol Mg-doped Z-cut lithium niobate crystal with a size of 30×10×0.5mm, that is, a thickness of 0.5mm. Both +/-Z of the crystal are polished, where the +Z plane is parallel to the horizontal plane and faces the positive direction of the Z-axis, and the -Z plane is parallel to the horizontal plane and faces the negative direction of the Z-axis.
2)用Matlab软件模拟满足准相位匹配条件所需要的周期Λ:
得到晶片的温度为15.15℃时E光可在O光宽带倍频中心倍频,同时可以在此位置实现O、E光耦合并产生慢光的周期为19.5μm,其中:O光宽带倍频的范围是:1.537-1.558μm,E光倍频和禁带中心波长为1.549μm。It is obtained that when the temperature of the wafer is 15.15°C, the E light can be frequency-multiplied at the O-light broadband frequency doubling center, and at the same time, the O-light and E light coupling can be realized at this position, and the period of slow light generation is 19.5 μm, wherein: the O-light broadband frequency multiplication The range is: 1.537-1.558μm, the frequency doubling of E light and the center wavelength of forbidden band is 1.549μm.
3)根据得到的周期对晶体进行室温极化,具体如下:3) Polarize the crystal at room temperature according to the obtained period, as follows:
首先根据计算得到的周期制作周期性电极掩模板;通过晶体的热释电效应进行定向,确定晶片的+Z面;对晶片进行清洗,保证表面无杂物;用离子束溅射的方法在晶片的+Z向镀电极;在晶体表面的金属膜上面,刻蚀出与掩模板完全对应的几何图形,以实现选择性扩散和金属薄膜布线的目的,光刻有以下七个主要过程:涂胶、前烘、曝光、显影、腐蚀和去胶;设计极化电路,电场极化的电极配置通常采用液体电极接触的方式;最后用脉冲高压电场进行极化,在有电极的畴区域,利用高压电场克服晶体内部的矫顽场使该畴区域的电畴的自发极化方向反转;在无电极的畴区域,电畴的极化方向仍保持原来的方向,其中,+Z面与水平面平行并面向z轴正方向。所用外电场为脉冲高压电场,由于铌酸锂晶体的矫顽场为21kv/mm,所以施加在厚度为0.5mm的铌酸锂晶片上脉冲峰值电压要大于10.5kv/mm,脉冲周期的长短与次数与电极的实际表面积有关,可通过下面公式计算得到:
4)给极化好的晶片镀Y向电极,具体如下:4) Plating Y-direction electrodes on the polarized wafers, as follows:
先在极化好的晶体的+/-Z面和+/-X面涂一层厚1μm的光刻胶,把样品放入真空溅射机(使用的靶材为银)腔内中央的垫片上;抽真空,首先使用机械泵,样品室压强降低到5Pa;预溅基片(铌酸锂)在功率200W,时间4分钟;关闭溅射电源,冷却5分钟后,打开真空室取出PPLN,即可得在Y向镀电极的PPLN晶体。First coat a layer of photoresist with a thickness of 1 μm on the +/-Z surface and +/-X surface of the polarized crystal, and put the sample into the pad in the center of the cavity of the vacuum sputtering machine (the target used is silver) On-chip; vacuumize, first use a mechanical pump, and reduce the pressure of the sample chamber to 5Pa; pre-sputter the substrate (lithium niobate) at a power of 200W for 4 minutes; turn off the sputtering power supply, cool for 5 minutes, open the vacuum chamber and take out the PPLN , that is, the PPLN crystal on the Y-plated electrode can be obtained.
5)如图2所示室温控制为15.15℃,PPLN前面放偏振分光棱镜使得O光入射,1520-1620nm的可调谐激光作为基波光输入,PPLN的Y向加电极,在PPLN的后面用光功率计测量倍频光的功率。5) As shown in Figure 2, the room temperature is controlled at 15.15°C. A polarizing beamsplitter prism is placed in front of the PPLN to make the O light incident. The tunable laser of 1520-1620nm is used as the fundamental wave light input. The Y direction of the PPLN is equipped with electrodes, and the optical power is used behind the PPLN. The meter measures the power of frequency-doubled light.
6)施加不超过400V/mm的电压,在基波光波长1549nm附近倍频光的功率都会比未加电压时大,电压为80V/mm时,倍频光的功率最大。表明在此处,倍频光得到了增强。6) When a voltage not exceeding 400V/mm is applied, the power of the frequency-doubled light near the fundamental wavelength of 1549nm will be greater than that without voltage. When the voltage is 80V/mm, the power of the frequency-doubled light is the largest. It shows that here, frequency-doubled light is enhanced.
在其他实施例中,也可以选用其他的周期或其他非周期性极化非线性晶体,亦可以实现此目的;同时可以如图2中所示的较小的实施设备占用体积实现改变PPLN的周期和实验时的温度,调节倍频增强在O光宽带倍频内的位置。In other embodiments, other periodic or other non-periodically polarized nonlinear crystals can also be used to achieve this purpose; at the same time, the smaller implementation equipment as shown in Figure 2 takes up a volume to realize changing the period of the PPLN And the temperature during the experiment, adjust the position of frequency multiplication enhancement in the broadband frequency multiplication of O light.
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