CN103604507B - A kind of method for on-line monitoring GIS tank interior temperature rise of conductor - Google Patents
A kind of method for on-line monitoring GIS tank interior temperature rise of conductor Download PDFInfo
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Abstract
本发明提供一种用于在线监测GIS罐体内部导体温升的方法,利用红外传感器接受温升部位发射的红外线,并将红外线能量转变为电信号,经过放大器、信号处理电路和AD转换电路,转变为导体的辐射功率,再通过斯蒂芬‑波尔兹曼定律,计算出导体的绝对温度,最后对绝对温度再进行修正,得到准确的导体绝对温度。本发明用于在带电运行情况下,实时监测GIS内部导体温升,避免事故的发生。
The invention provides a method for on-line monitoring the temperature rise of the conductor inside the GIS tank body. The infrared sensor is used to receive the infrared radiation emitted by the temperature rise part, and the infrared energy is converted into an electrical signal. After passing through the amplifier, the signal processing circuit and the AD conversion circuit, Convert it to the radiation power of the conductor, and then calculate the absolute temperature of the conductor through Stephen-Boltzmann's law, and finally correct the absolute temperature to obtain an accurate absolute temperature of the conductor. The invention is used to monitor the temperature rise of the inner conductor of the GIS in real time under the condition of electrified operation, so as to avoid the occurrence of accidents.
Description
技术领域technical field
本发明涉及一种监测方法,具体讲涉及一种用于在线监测GIS罐体内部导体温升的方法。The invention relates to a monitoring method, in particular to a method for online monitoring the temperature rise of a conductor inside a GIS tank body.
背景技术Background technique
任何高于绝对零度的物体都会以电磁波的形式向外发射出能量,这种能量叫做辐射能,波长在0.76~40μm的红外线短波部分电磁波热效应最明显。因此可以利用红外传感器,接受发热部位发出的红外线来测量温升部位温度。Any object above absolute zero will emit energy in the form of electromagnetic waves. This energy is called radiant energy. The thermal effect of electromagnetic waves in the infrared short-wave part with a wavelength of 0.76-40 μm is the most obvious. Therefore, the infrared sensor can be used to measure the temperature of the temperature rising part by receiving the infrared rays emitted by the heating part.
行业内目前已有用于GIS测温方法主要有通过对GIS导体局部材料进行改造,提高导体表面的发射率,再利用红外传感器接受红外线测量温度,但此方法对GIS改造成本相当大,且对已投入运行的GIS并不适用。At present, there are existing methods for GIS temperature measurement in the industry, mainly through the transformation of the local material of the GIS conductor to increase the emissivity of the conductor surface, and then use the infrared sensor to receive infrared measurement of temperature. A live GIS does not apply.
与常规电器相比,气体绝缘金属封闭开关设备(GIS)在结构性能上具有占地面积小、可靠性高、维护量少以及使用寿命长等优点,目前已在国内外电力系统中广泛应用。调研显示,由于工厂组装、现场安装以及交接验收等各个环节质量控制不严格,GIS设备内部导体插接部位因接触不良等造成的过热甚至烧毁故障,严重影响了电网供电可靠性。Compared with conventional electrical appliances, gas-insulated metal-enclosed switchgear (GIS) has the advantages of small footprint, high reliability, less maintenance and long service life in terms of structural performance, and has been widely used in domestic and foreign power systems. The survey shows that due to the lack of strict quality control in various links such as factory assembly, on-site installation, and handover acceptance, the internal conductor plugging parts of GIS equipment are overheated or even burned due to poor contact, which seriously affects the reliability of power grid power supply.
温度监测作为电力系统故障诊断的一个重要手段,有利于发现GIS设备初期故障,防止事故扩大,为GIS设备的正常运行提供保障。GIS负荷电流过大、连接部件松动接触不良或开关合闸不到位等均可能造成导电部件温升过高。例如:在正常运行时,GIS导电回路长期通过工作电流产生热能,使电器材料温度升高,一般不会超出规定值,但导电回路一旦发生接触不可靠时,接触电阻会显著增加,使电器材料温度升高超出规定值,造成电器材料的机械强度或物理性能下降,严重时发生接触部位烧熔,甚至击穿放电故障。由于GIS是全封闭设备,无法通过常规测温方法对导电部件的温度进行检测,因此,研究GIS温度在线监测对于发现GIS内部过热现象,避免设备故障具有重要意义。As an important means of power system fault diagnosis, temperature monitoring is beneficial to discover the initial faults of GIS equipment, prevent accidents from expanding, and provide guarantee for the normal operation of GIS equipment. Excessive GIS load current, loose connection parts, poor contact, or improper closing of the switch may cause excessive temperature rise of conductive parts. For example: during normal operation, the GIS conductive circuit generates heat energy through the working current for a long time, so that the temperature of the electrical material will rise, generally not exceeding the specified value, but once the conductive circuit is unreliable, the contact resistance will increase significantly, making the electrical material If the temperature rises beyond the specified value, the mechanical strength or physical properties of electrical materials will decrease, and in severe cases, the contact parts will be melted, and even breakdown and discharge failures will occur. Since GIS is a fully enclosed device, the temperature of conductive parts cannot be detected by conventional temperature measurement methods. Therefore, it is of great significance to study the online monitoring of GIS temperature to find the internal overheating phenomenon of GIS and avoid equipment failure.
针对导体接触不良缺陷,运行现场通常采用测量回路电阻、局放监测等方法,但测量GIS回路电阻需要停电,且一般GIS母线较长,受测试仪器功率限制通常只能检测出明显接触不良的缺陷。局放监测目前仍缺少行之有效的故障判据,而且过热与局放的对应关系有待深入研究。此外,国内外一些厂家利用热敏电阻、光纤传感器等方法进行测温,但较多应用于高压开关柜,如ABB公司用石英温度传感器对开关柜母线温升进行实时监测等。由于GIS是全封闭设备,预埋热敏电阻或光纤传感器后其内部绝缘性能,光纤引出接口的密封方式以及传感器使用寿命等存在许多尚难以解决的技术难题,使得上述方法均未能在GIS设备中实现现场应用。For poor contact defects of conductors, methods such as measuring loop resistance and partial discharge monitoring are usually used at the operation site. However, measuring GIS loop resistance requires a power outage, and generally the GIS busbar is long. Due to the power limit of the test instrument, only obvious defects of poor contact can usually be detected. . At present, there is still a lack of effective fault criteria for partial discharge monitoring, and the corresponding relationship between overheating and partial discharge needs to be further studied. In addition, some manufacturers at home and abroad use methods such as thermistors and optical fiber sensors to measure temperature, but they are mostly used in high-voltage switchgear. For example, ABB uses quartz temperature sensors to monitor the temperature rise of switchgear busbars in real time. Since GIS is a fully enclosed device, there are many technical problems that are still difficult to solve, such as the internal insulation performance of the embedded thermistor or optical fiber sensor, the sealing method of the optical fiber outlet interface, and the service life of the sensor. Realize field application.
发明内容Contents of the invention
为了克服上述现有技术的不足,本发明提供一种用于在线监测GIS罐体内部导体温升的方法,利用红外传感器接受温升部位发射的红外线,并将红外线能量转变为电信号,经过放大器、信号处理电路和AD转换电路,转变为导体的辐射功率,再通过斯蒂芬-波尔兹曼定律,计算出导体的绝对温度,最后对绝对温度再进行修正,得到准确的导体绝对温度。本发明用于在带电运行情况下,实时监测GIS内部导体温升,避免事故的发生。In order to overcome the deficiencies of the above-mentioned prior art, the present invention provides a method for online monitoring of the temperature rise of the conductor inside the GIS tank, using an infrared sensor to receive the infrared rays emitted by the temperature rise part, and convert the infrared energy into an electrical signal, which is passed through the amplifier , signal processing circuit and AD conversion circuit, transform it into the radiated power of the conductor, and then calculate the absolute temperature of the conductor through the Stephen-Boltzmann law, and finally correct the absolute temperature to obtain the accurate absolute temperature of the conductor. The invention is used to monitor the temperature rise of the inner conductor of the GIS in real time under the condition of electrified operation, so as to avoid the occurrence of accidents.
为了实现上述发明目的,本发明采取如下技术方案:In order to realize the above-mentioned purpose of the invention, the present invention takes the following technical solutions:
本发明提供一种用于在线监测GIS罐体内部导体温升的方法,包括以下步骤:The invention provides a method for on-line monitoring the temperature rise of a conductor inside a GIS tank, comprising the following steps:
步骤1:确定GIS罐体内部导体的发射率;Step 1: Determine the emissivity of the conductor inside the GIS tank;
步骤2:监测所述导体的辐射功率,并计算导体的绝对温度;Step 2: monitoring the radiation power of the conductor, and calculating the absolute temperature of the conductor;
步骤3:修正导体的绝对温度。Step 3: Correct the absolute temperature of the conductor.
所述步骤1包括以下步骤:Described step 1 comprises the following steps:
步骤1-1:将接触式感温传感器的发射率线调整为1;Step 1-1: Adjust the emissivity line of the contact temperature sensor to 1;
步骤1-2:将所述导体保持为恒温状态,并将所述接触式感温传感器贴在所述导体上;Step 1-2: keeping the conductor at a constant temperature, and sticking the contact temperature sensor on the conductor;
步骤1-3:采用所述接触式感温传感器测出导体的温度标准值T温度标准值;Step 1-3: using the contact temperature sensor to measure the temperature standard value T of the conductor;
步骤1-4:采用红外测温仪测出导体当前的温度实测值T温度实测值;Steps 1-4: Use an infrared thermometer to measure the current measured temperature value T of the conductor;
步骤1-5:计算所述导体的发射率,发射率用ε表示,有:Step 1-5: Calculate the emissivity of the conductor, the emissivity is represented by ε, there are:
所述步骤2中,采样红外传感器监测所述导体的辐射功率,具体包括以下步骤:In the step 2, the sampling infrared sensor monitors the radiation power of the conductor, which specifically includes the following steps:
步骤2-1:给GIS罐体安装红外玻璃;Step 2-1: Install infrared glass on the GIS tank;
步骤2-2:所述导体发射的红外线穿过所述红外玻璃进入所述红外传感器;Step 2-2: The infrared rays emitted by the conductor pass through the infrared glass and enter the infrared sensor;
步骤2-3:所述红外传感器监测所述导体的辐射功率;Step 2-3: the infrared sensor monitors the radiation power of the conductor;
步骤2-4:计算导体的绝对温度。Step 2-4: Calculate the absolute temperature of the conductor.
所述红外玻璃采用硫系红外玻璃。The infrared glass is chalcogenide infrared glass.
所述步骤2-3中,所述红外传感器将红外线转换为电信号,所述电信号经过放大器和信号处理电路,并经过AD转换为所述导体的辐射功率。In the step 2-3, the infrared sensor converts infrared rays into electrical signals, and the electrical signals pass through an amplifier and a signal processing circuit, and are converted into radiation power of the conductor through AD.
所述红外传感器距离导体的距离大于GIS罐体内壁距离导体的距离。The distance between the infrared sensor and the conductor is greater than the distance between the inner wall of the GIS tank and the conductor.
所述步骤2-4中,所述红外传感器中的微处理芯片依据斯蒂芬-波尔兹曼定律计算导体的绝对温度,有:In the step 2-4, the microprocessor chip in the infrared sensor calculates the absolute temperature of the conductor according to Stephen-Boltzmann's law, which has:
E=εσT4 (2)E=εσT 4 (2)
其中,T为导体的绝对温度,E为导体的辐射功率,σ为斯蒂芬-波尔兹曼常数。Among them, T is the absolute temperature of the conductor, E is the radiation power of the conductor, and σ is the Stefan-Boltzmann constant.
所述步骤3中,通过参数拟合的方法对计算出导体的绝对温度T进行修正,以得出最终的导体温度监测值。In the step 3, the calculated absolute temperature T of the conductor is corrected by means of parameter fitting to obtain the final monitored value of the conductor temperature.
所述GIS罐体采用的材料是0Cr13Al,其用碳含量为0.075%、硅含量为0.94%、锰含量为0.97%、磷含量为0.035%、硫含量为0.025%、铬含量为14.0%、余量为铁的合金制备,所述的百分数为重量百分数。The material used in the GIS tank body is 0Cr13Al, which has a carbon content of 0.075%, a silicon content of 0.94%, a manganese content of 0.97%, a phosphorus content of 0.035%, a sulfur content of 0.025%, and a chromium content of 14.0%. Quantities are prepared from iron alloys, and the stated percentages are by weight.
与现有技术相比,本发明的有益效果在于:Compared with prior art, the beneficial effect of the present invention is:
(1)利用该监测方法可不对GIS内部进行任何改造,检测方法安全可靠;(1) Using this monitoring method does not require any modification to the interior of the GIS, and the detection method is safe and reliable;
(2)可通过调整红外传感器距离被测温部位的距离和角度提高测量精度,且适用于不同结构的GIS设备;(2) The measurement accuracy can be improved by adjusting the distance and angle between the infrared sensor and the temperature-measured part, and it is suitable for GIS equipment with different structures;
(3)利用此方法可实时发现GIS设备内部导体插接部位的发热缺陷;(3) By using this method, the heating defect of the conductor insertion part inside the GIS equipment can be found in real time;
(4)用于在带电运行情况下,实时监测GIS内部导体温升,避免事故的发生。(4) It is used to monitor the temperature rise of the internal conductor of GIS in real time under the condition of electrified operation, so as to avoid accidents.
附图说明Description of drawings
图1是用于在线监测GIS罐体内部导体温升的方法流程图;Fig. 1 is the flow chart of the method for on-line monitoring GIS tank internal conductor temperature rise;
图2是通过红外传感器监测导体的辐射功率示意图;Fig. 2 is a schematic diagram of monitoring the radiation power of a conductor by an infrared sensor;
图3是红外传感器与GIS罐体安装结构示意图;Figure 3 is a schematic diagram of the installation structure of the infrared sensor and the GIS tank;
其中,1-金属法兰,2-红外传感器,3-红外玻璃,4-导体插接位置。Among them, 1-metal flange, 2-infrared sensor, 3-infrared glass, 4-conductor insertion position.
具体实施方式detailed description
下面结合附图对本发明作进一步详细说明。The present invention will be described in further detail below in conjunction with the accompanying drawings.
如图1,本发明提供一种用于在线监测GIS罐体内部导体温升的方法,包括以下步骤:As shown in Fig. 1, the present invention provides a kind of method for on-line monitoring GIS tank interior conductor temperature rise, comprises the following steps:
步骤1:确定GIS罐体内部导体的发射率;Step 1: Determine the emissivity of the conductor inside the GIS tank;
步骤2:监测所述导体的辐射功率,并计算导体的绝对温度;Step 2: monitoring the radiation power of the conductor, and calculating the absolute temperature of the conductor;
步骤3:修正导体的绝对温度。Step 3: Correct the absolute temperature of the conductor.
导体的发射率是导体相对于黑体辐射能力大小的物理量,它除了与物体的材料形状、表面粗糙度、凹凸度等有关外,还与测试的方向有关。若导体为光洁表面时,其方向性更为敏感。The emissivity of a conductor is a physical quantity of the radiation ability of a conductor relative to a black body. It is not only related to the material shape, surface roughness, unevenness, etc. of the object, but also related to the direction of the test. If the conductor is a smooth surface, its directionality is more sensitive.
所述步骤1包括以下步骤:Described step 1 comprises the following steps:
步骤1-1:将接触式感温传感器的发射率线调整为1;Step 1-1: Adjust the emissivity line of the contact temperature sensor to 1;
步骤1-2:将所述导体保持为恒温状态,并将所述接触式感温传感器贴在所述导体上;Step 1-2: keeping the conductor at a constant temperature, and sticking the contact temperature sensor on the conductor;
步骤1-3:采用所述接触式感温传感器测出导体的温度标准值T温度标准值;Step 1-3: using the contact temperature sensor to measure the temperature standard value T of the conductor;
步骤1-4:采用红外测温仪测出导体当前的温度实测值T温度实测值;Steps 1-4: Use an infrared thermometer to measure the current measured temperature value T of the conductor;
步骤1-5:计算所述导体的发射率,发射率用ε表示,有:Step 1-5: Calculate the emissivity of the conductor, the emissivity is represented by ε, there are:
所述步骤2中,采样红外传感器监测所述导体的辐射功率,具体包括以下步骤:In the step 2, the sampling infrared sensor monitors the radiation power of the conductor, which specifically includes the following steps:
步骤2-1:给GIS罐体安装红外玻璃;Step 2-1: Install infrared glass on the GIS tank;
所述红外玻璃采用硫系红外玻璃,其对1~17μm的红外波段具有良好的透过性能,完全满足GIS红外测温要求(电力设备的绝对温度范围为273K~473K,在此范围内,红外峰值波长为6.13~10.61μm)。The infrared glass adopts chalcogenide infrared glass, which has good transmission performance in the infrared band of 1-17 μm, and fully meets the requirements of GIS infrared temperature measurement (the absolute temperature range of power equipment is 273K-473K, within this range, infrared The peak wavelength is 6.13-10.61 μm).
步骤2-2:所述导体发射的红外线穿过所述红外玻璃进入所述红外传感器;Step 2-2: The infrared rays emitted by the conductor pass through the infrared glass and enter the infrared sensor;
步骤2-3:所述红外传感器监测所述导体的辐射功率;Step 2-3: the infrared sensor monitors the radiation power of the conductor;
步骤2-4:计算导体的绝对温度。Step 2-4: Calculate the absolute temperature of the conductor.
所述步骤2-3中,所述红外传感器将红外线转换为电信号,所述电信号经过放大器和信号处理电路,并经过AD转换为所述导体的辐射功率。In the step 2-3, the infrared sensor converts infrared rays into electrical signals, and the electrical signals pass through an amplifier and a signal processing circuit, and are converted into radiation power of the conductor through AD.
所述红外传感器距离导体的距离大于GIS罐体内壁距离导体的距离。The distance between the infrared sensor and the conductor is greater than the distance between the inner wall of the GIS tank and the conductor.
所述步骤2-4中,所述红外传感器中的微处理芯片依据斯蒂芬-波尔兹曼定律计算导体的绝对温度,有:In the step 2-4, the microprocessor chip in the infrared sensor calculates the absolute temperature of the conductor according to Stephen-Boltzmann's law, which has:
E=εσT4 (2)E=εσT 4 (2)
其中,T为导体的绝对温度,E为导体的辐射功率,σ为斯蒂芬-波尔兹曼常数,取为5.67×10-8W/(m2·K4)。Among them, T is the absolute temperature of the conductor, E is the radiation power of the conductor, and σ is the Stefan-Boltzmann constant, which is taken as 5.67×10 -8 W/(m 2 ·K 4 ).
由于GIS设备在运行过程中内部充入一定压力的SF6气体,因此,红外线会经过SF6气体环境后进入感温传感器。实验证明,不同温度区间此感温系统测量的部位温升误差各不相同,这与GIS内部的SF6气体环境有关。通过参数拟合的方法对计算出导体的绝对温度T进行修正,以得出最终的导体温度监测值。Since the GIS equipment is filled with a certain pressure of SF 6 gas during operation, the infrared rays will enter the temperature sensor after passing through the SF 6 gas environment. Experiments have proved that the temperature rise errors of the parts measured by the temperature sensing system in different temperature ranges are different, which is related to the SF 6 gas environment inside the GIS. The calculated absolute temperature T of the conductor is corrected by the method of parameter fitting to obtain the final conductor temperature monitoring value.
所述GIS罐体采用的材料是0Cr13Al,其用碳含量为0.075%、硅含量为0.94%、锰含量为0.97%、磷含量为0.035%、硫含量为0.025%、铬含量为14.0%、余量为铁的合金制备,所述的百分数为重量百分数。GIS罐体还可采用铝质材料制成。The material used in the GIS tank body is 0Cr13Al, which has a carbon content of 0.075%, a silicon content of 0.94%, a manganese content of 0.97%, a phosphorus content of 0.035%, a sulfur content of 0.025%, and a chromium content of 14.0%. Quantities are prepared from iron alloys, and the stated percentages are by weight. The GIS tank body can also be made of aluminum material.
最后应当说明的是:以上实施例仅用以说明本发明的技术方案而非对其限制,尽管参照上述实施例对本发明进行了详细的说明,所属领域的普通技术人员应当理解:依然可以对本发明的具体实施方式进行修改或者等同替换,而未脱离本发明精神和范围的任何修改或者等同替换,其均应涵盖在本发明的权利要求范围当中。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: the present invention can still be Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention shall be covered by the scope of the claims of the present invention.
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