CN103603042A - Ferroelectric monocrystal yttrium lead niobate-magnesium lead niobate-lead titanate as well as preparation and application thereof - Google Patents
Ferroelectric monocrystal yttrium lead niobate-magnesium lead niobate-lead titanate as well as preparation and application thereof Download PDFInfo
- Publication number
- CN103603042A CN103603042A CN201310578843.5A CN201310578843A CN103603042A CN 103603042 A CN103603042 A CN 103603042A CN 201310578843 A CN201310578843 A CN 201310578843A CN 103603042 A CN103603042 A CN 103603042A
- Authority
- CN
- China
- Prior art keywords
- crystal
- pmn
- lead
- temperature
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011777 magnesium Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 title abstract description 8
- YFELSHAOJFLZEW-UHFFFAOYSA-N [Y].[Pb] Chemical compound [Y].[Pb] YFELSHAOJFLZEW-UHFFFAOYSA-N 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 claims abstract description 108
- 239000000463 material Substances 0.000 claims abstract description 44
- 239000000126 substance Substances 0.000 claims abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 29
- 229910052697 platinum Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 8
- 230000004907 flux Effects 0.000 claims description 8
- 239000011812 mixed powder Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000011068 loading method Methods 0.000 claims description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims description 2
- 241001124569 Lycaenidae Species 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- -1 yttrium-lead magnesium Chemical compound 0.000 claims 1
- 239000006104 solid solution Substances 0.000 abstract description 7
- 230000007704 transition Effects 0.000 abstract description 7
- 229910019653 Mg1/3Nb2/3 Inorganic materials 0.000 abstract 1
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- 239000006184 cosolvent Substances 0.000 description 15
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 description 10
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000011056 performance test Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 238000000634 powder X-ray diffraction Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000001757 thermogravimetry curve Methods 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 244000137852 Petrea volubilis Species 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种新型铁电单晶及其制备方法。具体而言,本发明涉及到具有准同型相界(MPB)结构且居里温度相对较高的铁电单晶材料(1-x-y)Pb(Y1/2Nb1/2)O3-x Pb(Mg1/3Nb2/3)O3-y PbTiO3,简记为PYN-PMN-PT,以及晶体的制备方法、结构和电学性能,属于晶体技术和功能材料学领域。The invention relates to a novel ferroelectric single crystal and a preparation method thereof. Specifically, the present invention relates to a ferroelectric single crystal material (1-xy)Pb(Y 1/2 Nb 1/2 )O 3 -x with quasi-isomorphic phase boundary (MPB) structure and relatively high Curie temperature Pb(Mg 1/3 Nb 2/3 )O 3 -y PbTiO 3 , abbreviated as PYN-PMN-PT, and the preparation method, structure and electrical properties of the crystal belong to the field of crystal technology and functional materials.
背景技术Background technique
铅基钙钛矿结构固溶体,尤其是以钛酸铅作为一种端元组分的弛豫铁电单晶材料,由于具有优异的压电性能而在机电耦合领域如水声、超声、传感和微机械系统尤其是国防建设等方面有着广泛而且重要的应用,是目前备受关注的重要功能铁电材料。作为弛豫铁电单晶的典型代表,铌镁酸铅-钛酸铅(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMN-PT)已经成为新一代高性能的水声换能器、医用超声换能器、传感器和驱动器的核心压电材料。PMN-PT单晶的压电性能除了跟居里温度(TC)有关,还和居里温度之下的三方——四方之间的相变温度(TR-T)密切相关。当使用温度超过相变温度TR-T时,其压电系数和机电耦合系数都会明显下降导致压电性能大大衰减。此外,PMN-PT单晶的矫顽电场(EC)也比较低(2-3kV/cm),限制了其在大功率超声换能器中的应用。这些本征缺陷限制了PMN-PT单晶在很多方面尤其是较高温度范围的应用。如果能探索出新型弛豫铁电单晶,在保持PMN-PT单晶的优良压电和机电耦合性能的同时,还能提高材料的居里温度、三方——四方相变温度和矫顽场强,就可以有效地弥补PMN-PT单晶的本征不足,使其电学性能表现出较好的温度稳定性,扩大该类材料的实际应用范围。因此,探索新的高居里温度、高性能弛豫铁电单晶材料就成为发展新一代铁电压电器件亟待解决的关键问题。Lead-based perovskite structure solid solutions, especially relaxor ferroelectric single crystal materials with lead titanate as a terminal component, are widely used in electromechanical coupling fields such as underwater acoustics, ultrasound, sensing and Micromechanical systems, especially in national defense construction, have extensive and important applications, and they are important functional ferroelectric materials that have attracted much attention. As a typical representative of relaxor ferroelectric single crystal, lead magnesium niobate-lead titanate (1-x)Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PMN-PT) has become a new generation of high Core piezoelectric materials for high-performance underwater acoustic transducers, medical ultrasonic transducers, sensors and actuators. The piezoelectric properties of PMN-PT single crystal are not only related to the Curie temperature (T C ), but also closely related to the phase transition temperature (T RT ) between the three parties and four parties below the Curie temperature. When the operating temperature exceeds the phase transition temperature T RT , its piezoelectric coefficient and electromechanical coupling coefficient will decrease significantly, resulting in a great attenuation of piezoelectric performance. In addition, the coercive electric field ( EC ) of PMN-PT single crystal is relatively low (2-3kV/cm), which limits its application in high-power ultrasonic transducers. These intrinsic defects limit the application of PMN-PT single crystal in many aspects, especially in the higher temperature range. If a new type of relaxor ferroelectric single crystal can be explored, while maintaining the excellent piezoelectric and electromechanical coupling properties of PMN-PT single crystal, the Curie temperature, trigonal-tetragonal phase transition temperature and coercive field of the material can also be improved. Strong, it can effectively make up for the intrinsic deficiency of PMN-PT single crystal, so that its electrical properties show better temperature stability, and expand the practical application range of this type of material. Therefore, exploring new high-Curie temperature and high-performance relaxor ferroelectric single crystal materials has become a key problem to be solved in the development of a new generation of ferroelectric devices.
以PMN-PT为代表的具有复合钙钛矿型结构的(1-x)Pb(B′B′′)O3-xPbTiO3[B′:Mg2+,Zn2+,In3+,Sc3+;B′′:Nb5+,Ta2+]弛豫铁电固溶体单晶,其端元组分Pb(B′B′′)O3和PbTiO3分别属于三方(赝立方)和四方对称性,随着PT组分的变化,在固溶体系内存在着一个多相共存的所谓准同型相界(MPB)区域,在该区域内,固溶体材料一般具有良好的压电和机电耦合性能。自从PMN-PT类弛豫铁电陶瓷在1957年由前苏联科学家首先发现以来,人们陆续发现了一系列的具有MPB结构的弛豫铁电体陶瓷体系,如一些二元系铅基铁电材料(1-x)Pb(In1/2Nb1/2)O3-xPbTiO3(PIN-PT)、(1-x)Pb(Yb1/2Nb1/2)O3-xPbTiO3(PYN-PT)、(1-x)Pb(Sc1/2Nb1/2)O3-xPbTiO3(PSN-PT)、BiScO3-PbTiO3(BS-PT)等都具有较高的居里温度,且有较好的压电性能和机电耦合性能,可以大大拓宽弛豫铁电单晶实际使用的温度和功率范围。由于这些二元体系的熔点相对于PMN-PT较高,增加了生长的难度。同时由于这类二元体系均为无限混溶体系,从熔体中直接生长单晶,容易出现组分分凝现象。(1-x)Pb(B′B′′)O 3 -xPbTiO 3 [B′: Mg 2+ , Zn 2+ , In 3+ , Sc 3+ ; B′′: Nb 5+ , Ta 2+ ] relaxor ferroelectric solid solution single crystal, whose end member components Pb(B′B′′)O 3 and PbTiO 3 belong to trigonal (pseudocubic) and tetragonal, respectively Symmetry, with the change of PT composition, there is a so-called quasi-isomorphic phase boundary (MPB) region where multiple phases coexist in the solid solution system. In this region, solid solution materials generally have good piezoelectric and electromechanical coupling properties. Since PMN-PT relaxor ferroelectric ceramics were first discovered by former Soviet scientists in 1957, people have successively discovered a series of relaxor ferroelectric ceramic systems with MPB structure, such as some binary lead-based ferroelectric materials. (1-x)Pb(In 1/2 Nb 1/2 )O 3 -xPbTiO 3 (PIN-PT), (1-x)Pb(Yb 1/2 Nb 1/2 )O 3 -xPbTiO 3 (PYN -PT), (1-x)Pb(Sc 1/2 Nb 1/2 )O 3 -xPbTiO 3 (PSN-PT), BiScO 3 -PbTiO 3 (BS-PT), etc. all have high Curie temperature , and has good piezoelectric performance and electromechanical coupling performance, which can greatly broaden the temperature and power range of the actual use of relaxor ferroelectric single crystals. Since the melting point of these binary systems is higher than that of PMN-PT, the difficulty of growth is increased. At the same time, since this type of binary system is an infinitely miscible system, direct growth of single crystals from the melt is prone to component segregation.
相比较之下,三元系铅基铁电材料具有熔点低、相对容易生长的优势,如铌铟酸铅-铌镁酸铅-钛酸铅(PIN-PMN-PT)、铌镱酸铅-铌镁酸铅-钛酸铅(PYbN-PMN-PT)、铌钪酸铅-铌镁酸铅-钛酸铅(PSN-PMN-PT)、铌镁酸铅-锆酸铅-钛酸铅(PMN-PZT)等,其优良的压电、机电耦合性能尤其是相对较高的居里温度使得该类材料有望成为新一代的压电材料。随着研究的深入,国际国内铁电材料领域对三元系铁电单晶给予了越来越多的关注,三元系铁电单晶成为弛豫铁电材料领域的一个热点。In contrast, ternary lead-based ferroelectric materials have the advantages of low melting point and relatively easy growth, such as lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT), lead niobate-ytterbate- Lead magnesium niobate-lead titanate (PYbN-PMN-PT), lead scandate-lead magnesium niobate-lead titanate (PSN-PMN-PT), lead magnesium niobate-lead zirconate-lead titanate ( PMN-PZT), etc., its excellent piezoelectric and electromechanical coupling properties, especially the relatively high Curie temperature make this type of material is expected to become a new generation of piezoelectric materials. With the deepening of research, more and more attention has been paid to ternary ferroelectric single crystals in the field of ferroelectric materials at home and abroad, and ternary ferroelectric single crystals have become a hot spot in the field of relaxor ferroelectric materials.
铌钇酸铅-铌镁酸铅-钛酸铅(PYN-PMN-PT)也属于复合钙钛矿结构,在全组分范围内完全混溶,也同样存在一个准同型相界(MPB)区域,在准同型相界区域,表现出了较好的压电性能。研究三元体系PYN-PMN-PT在MPB区域及附近组分的单晶的制备方法、结构和电学性能,可以为压电领域提供一种新型且能用于大功率器件的高居里温度高性能铁电单晶。发明内容Lead yttrium niobate-lead magnesium niobate-lead titanate (PYN-PMN-PT) also belongs to the composite perovskite structure, which is completely miscible in the whole composition range, and there is also a quasi-isomorphic phase boundary (MPB) region , in the quasi-isomorphic phase boundary region, showing better piezoelectric performance. Studying the preparation method, structure and electrical properties of the single crystal of the ternary system PYN-PMN-PT in the MPB region and nearby components can provide a new type of high Curie temperature and high performance for the piezoelectric field that can be used in high-power devices. ferroelectric single crystal. Contents of the invention
本发明的目的在于公开一种新型三元铁电固溶体单晶并研究其制备工艺,以解决现有高居里温度铁电单晶难生长和没有较好的适用于大功率器件的铁电单晶,为铁电单晶材料增加一种新产品。该晶体材料能广泛用于压电器件领域。The purpose of the present invention is to disclose a new type of ternary ferroelectric solid solution single crystal and to study its preparation process, so as to solve the problem that the existing high Curie temperature ferroelectric single crystal is difficult to grow and there is no ferroelectric single crystal suitable for high-power devices , adding a new product for ferroelectric single crystal materials. The crystal material can be widely used in the field of piezoelectric devices.
本发明提供的一种新型的铁电单晶材料,其特征在于:A kind of novel ferroelectric single crystal material provided by the invention is characterized in that:
主成分化合物由(1-x-y)Pb(Y1/2Nb1/2)O3-xPb(Mg1/3Nb2/3)O3-yPbTiO3(PYN-PMN-PT) 表示,式中,x=0.44,y=0.34~0.44,属于典型的钙钛矿结构。该固溶体存在准同型相界(MPB)区,x=0.44时,准同型相区位于y=0.38~0.42。The main component compound is represented by (1-xy)Pb(Y 1/2 Nb 1/2 )O 3 -xPb(Mg 1/3 Nb 2/3 )O 3 -yPbTiO 3 (PYN-PMN-PT), where , x=0.44, y=0.34~0.44, which belongs to the typical perovskite structure. The solid solution has a quasi-isotype phase boundary (MPB) region, and when x=0.44, the quasi-isotype phase region is located at y=0.38-0.42.
本发明所述的铁电晶体材料的制备方法,是基于能生长大尺寸的顶部籽晶法,其特征在于包括如下具体步骤:The preparation method of the ferroelectric crystal material of the present invention is based on the top seed crystal method capable of growing large sizes, and is characterized in that it comprises the following specific steps:
a)将初始原料PbO、TiO2、Y2O3、MgO、Nb2O5按晶体的化学式(1-x-y)Pb(Y1/2Nb1/2)O3-x Pb(Mg1/3Nb2/3)O3-y PbTiO3进行配比, 其中x=0.44,y=0.34~0.44; a) According to the chemical formula (1-xy)Pb(Y 1/2 Nb 1/2 ) O 3 -x Pb ( Mg 1 / 3 Nb 2/3 )O 3 -y PbTiO 3 for proportioning, where x=0.44, y=0.34~0.44;
b)助熔剂采用PbO或Pb3O4和H3BO3或B2O3复合助熔剂,PYN-PMN-PT与助熔剂的摩尔比为1:1~10;b) The flux is PbO or Pb 3 O 4 and H 3 BO 3 or B 2 O 3 composite flux, and the molar ratio of PYN-PMN-PT to flux is 1:1~10;
c)将晶体原料和助熔剂在容器中混合研磨;c) mixing and grinding the crystal raw material and the flux in a container;
d)将混合均匀的粉料装入铂金坩埚中,并把铂金坩埚置于晶体生长炉中化料;d) loading the uniformly mixed powder into a platinum crucible, and placing the platinum crucible in a crystal growth furnace;
e)将晶体生长炉升温至混合粉料呈熔融状态,恒温一定时间;以适当降温速率降温,然后用PMN-PT籽晶找到过饱和温度,在过饱和温度引入籽晶生长,生长过程中旋转籽晶,适当降温,并根据生长晶体的快慢调节降温速率。当生长晶体满足要求时,从熔体中提起晶体,降温退火,在室温取出晶体。e) Heat up the crystal growth furnace until the mixed powder is in a molten state, and keep the temperature constant for a certain period of time; cool down at an appropriate cooling rate, then use the PMN-PT seed crystal to find the supersaturation temperature, introduce the seed crystal growth at the supersaturation temperature, and rotate during the growth process For seed crystals, cool down appropriately, and adjust the cooling rate according to the speed of growing crystals. When the growing crystal meets the requirements, the crystal is lifted from the melt, annealed at lower temperature, and the crystal is taken out at room temperature.
所采用的铂金坩埚为圆柱型坩埚。The platinum crucible used is a cylindrical crucible.
籽晶生长方向为(001)或(110)或(111)方向。The seed crystal growth direction is (001) or (110) or (111) direction.
所采用的晶体生长炉为电阻加热元件,加热元件为电阻丝或硅碳棒或硅钼棒。The crystal growth furnace adopted is a resistance heating element, and the heating element is a resistance wire or a silicon carbon rod or a silicon molybdenum rod.
本发明所述晶体的制备方法均采用助溶剂,助溶剂用PbO或Pb3O4和H3BO3或B2O3复合助溶剂。生长出晶体质量好,没有助溶剂包裹体,成分均一性好。该晶体可用于用于声纳传感器、水声换能器、压电点火器、电容器、驱动器、铁电存储器、红外探测器等压电领域的器件上。The preparation methods of the crystals in the present invention all use a co-solvent, and the co-solvent is a composite co-solvent of PbO or Pb 3 O 4 and H 3 BO 3 or B 2 O 3 . The quality of the grown crystal is good, there is no cosolvent inclusion, and the composition uniformity is good. The crystal can be used in devices in the piezoelectric field such as sonar sensors, underwater acoustic transducers, piezoelectric igniters, capacitors, drivers, ferroelectric memories, and infrared detectors.
本发明所述铁电单晶材料PYN-PMN-PT具有MPB结构。在PbTiO3(PT)含量较少时是三方钙钛矿结构,在PbTiO3含量较多时过渡到四方钙钛矿结构。固定PMN的含量,根据PYN和PT的比例的不同,生长出的在MPB区及其附近的PYN-PMN-PT晶体的居里温度Tc可在125~145℃之间,三方-四方相变温度TRT在90~95℃之间,矫顽场Ec(3-3.4kV/cm),压电系数d33(1244-1608pC/N)。The ferroelectric single crystal material PYN-PMN-PT of the present invention has an MPB structure. When the PbTiO 3 (PT) content is low, it is a trigonal perovskite structure, and when the PbTiO 3 content is high, it transitions to a tetragonal perovskite structure. Fixed PMN content, according to the different proportions of PYN and PT, the Curie temperature Tc of the PYN-PMN-PT crystal grown in the MPB area and its vicinity can be between 125 and 145 °C, and the trigonal-tetragonal phase transition temperature T RT is between 90~95℃, coercive field E c (3-3.4kV/cm), piezoelectric coefficient d 33 (1244-1608pC/N).
附图说明Description of drawings
图1为实施例2制备的PYN-PMN-PT铁电单晶在室温下的X射线粉末衍射图。粉末衍射仪型号:日本理学MiniFlexП。Fig. 1 is the X-ray powder diffraction pattern of the PYN-PMN-PT ferroelectric single crystal prepared in Example 2 at room temperature. Powder diffractometer model: Rigaku MiniFlexП.
图2为实施例2制备的PYN-PMN-PT单晶极化后的介电温谱图。介电分析仪型号:德国Novolcontrol Alpha-A。Fig. 2 is the dielectric thermogram of the PYN-PMN-PT single crystal prepared in Example 2 after polarization. Dielectric analyzer model: German Novolcontrol Alpha-A.
图3为实施例2制备的PYN-PMN-PT单晶在不同电场下的电滞回线。铁电分析仪的型号:aix-ACCT TF2000。Figure 3 is the hysteresis loops of the PYN-PMN-PT single crystal prepared in Example 2 under different electric fields. The model of the ferroelectric analyzer: aix-ACCT TF2000.
图4为(1-x-y)Pb(Y1/2Nb1/2)O3-x Pb(Mg1/3Nb2/3)O3-y PbTiO3(PYN-PMN-PT)三元相图。式中,x=0.44,y=0.34~0.44。Figure 4 shows the (1-xy)Pb(Y 1/2 Nb 1/2 )O 3 -x Pb(Mg 1/3 Nb 2/3 )O 3 -y PbTiO 3 (PYN-PMN-PT) ternary phase picture. In the formula, x=0.44, y=0.34~0.44.
具体实施方式Detailed ways
下面结合具体的实施方案对本发明做进一步详细、完整的说明,但不限制本发明的内容。The present invention will be described in further detail and complete below in conjunction with specific embodiments, but the content of the present invention will not be limited.
本发明所采用的晶体生长炉为自行设计加工;用于结构分析的粉末衍射仪采用Rigaku diffractometer(Rigaku,Japan);介电温谱用德国Novocontrol公司的Alpha-A宽频介电/阻抗分析仪;电滞回线是由德国Aixacct公司生产的aix-ACCT TF2000铁电分析仪测得(频率为2Hz)。The crystal growth furnace that the present invention adopts is self-designed processing; The powder diffractometer (Rigaku, Japan) that is used for structural analysis adopts Rigaku diffractometer (Rigaku, Japan); The Alpha-A broadband dielectric/impedance analyzer of German Novocontrol Company is used for dielectric temperature spectrum; The hysteresis loop is measured by aix-ACCT TF2000 ferroelectric analyzer produced by Aixacct Company of Germany (frequency is 2Hz).
实施例1:Example 1:
采用高温溶液法生长PYN-PMN-PT铁电单晶材料。The PYN-PMN-PT ferroelectric single crystal material was grown by high temperature solution method.
将初始原料PbO或Pb3O4、Y2O3、MgO、TiO2、Nb2O5,助溶剂采用PbO或Pb3O4和H3BO3或B2O3复合助溶剂,按照0.12PYN-0.44PMN-0.44T比例称量,搅拌混合研磨。将混合均匀的粉料装入铂金坩埚中,并把铂金坩埚置于晶体生长炉中化料。将化好的料加热至过饱和温度以上,恒温一定时间,然后缓慢降温生长;化料温度为1000-1100℃之间,以每天1-20℃的速率降温;在生长过程中可用铂金丝悬在液面中央,以形成成核中心,减少成核数量和促进成核生长;生长结束,以5-40℃/h降温退火,后取出晶体。通过对生长的晶体的X射线粉末衍射、介电、铁电、压电性能测试分析,确定其结构和性能。The initial raw material PbO or Pb 3 O 4 , Y 2 O 3 , MgO, TiO 2 , Nb 2 O 5 , the co-solvent is PbO or Pb 3 O 4 and H 3 BO 3 or B 2 O 3 composite co-solvent, according to 0.12 PYN-0.44PMN-0.44T proportional weighing, stirring, mixing and grinding. Put the uniformly mixed powder into a platinum crucible, and place the platinum crucible in a crystal growth furnace to form the material. Heat the prepared material above the supersaturation temperature, keep the temperature constant for a certain period of time, and then slowly cool down to grow; the temperature of the chemical material is between 1000-1100°C, and the temperature is lowered at a rate of 1-20°C per day; during the growth process, platinum wire can be used to hang In the center of the liquid surface, to form a nucleation center, reduce the number of nucleation and promote nucleation growth; after the growth is complete, cool down and anneal at 5-40°C/h, and then take out the crystal. Through the X-ray powder diffraction, dielectric, ferroelectric and piezoelectric performance test and analysis of the grown crystal, its structure and performance are determined.
实施例2:Example 2:
采用高温溶液法生长PYN-PMN-PT铁电单晶材料。The PYN-PMN-PT ferroelectric single crystal material was grown by high temperature solution method.
将初始原料PbO或Pb3O4、Y2O3、MgO、TiO2、Nb2O5,助溶剂采用PbO或Pb3O4和H3BO3或B2O3复合助溶剂,按照比例0.14PYN-0.44PMN-0.42PT称量,搅拌混合研磨。将混合均匀的粉料装入铂金坩埚中,并把铂金坩埚置于晶体生长炉中化料。将化好的料加热至过饱和温度以上,恒温一定时间,用籽晶找到生长点进行生长;在1000-1100℃左右生长,晶转速率为5-30rpm,降温速率为每天0.1-5℃;生长结束,晶体提出液面,以5-40℃/h降温退火。生长出的单晶为显露(001)自然生长面的四方形晶体,晶体质量好,没有助溶剂包裹体,成分均一性好。通过对生长的晶体的X射线粉末衍射、介电、铁电、压电性能测试分析,确定其结构和性能。The initial raw material PbO or Pb 3 O 4 , Y 2 O 3 , MgO, TiO 2 , Nb 2 O 5 , co-solvent using PbO or Pb 3 O 4 and H 3 BO 3 or B 2 O 3 composite co-solvent, according to the ratio 0.14PYN-0.44PMN-0.42PT weighing, stirring, mixing and grinding. Put the uniformly mixed powder into a platinum crucible, and place the platinum crucible in a crystal growth furnace to form the material. Heat the prepared material above the supersaturation temperature, keep the temperature for a certain period of time, and use the seed crystal to find the growth point to grow; grow at about 1000-1100 °C, the crystal rotation rate is 5-30 rpm, and the cooling rate is 0.1-5 °C per day; After the growth is over, the crystal is lifted out of the liquid surface, and the temperature is lowered and annealed at 5-40°C/h. The grown single crystal is a square crystal with (001) natural growth surface exposed, the crystal quality is good, there is no co-solvent inclusion, and the composition uniformity is good. Through the X-ray powder diffraction, dielectric, ferroelectric and piezoelectric performance test and analysis of the grown crystal, its structure and performance are determined.
实施例3:Example 3:
采用高温溶液法生长PYN-PMN-PT铁电单晶材料。The PYN-PMN-PT ferroelectric single crystal material was grown by high temperature solution method.
将初始原料PbO或Pb3O4、Y2O3、MgO、TiO2、Nb2O5,助溶剂采用PbO或Pb3O4和H3BO3或B2O3复合助溶剂,按照比例0.18PYN-0.44PMN-0.38PT称量,搅拌混合研磨。将混合均匀的粉料装入铂金坩埚中,并把铂金坩埚置于晶体生长炉中化料。将化好的料加热至过饱和温度以上,恒温一定时间,用籽晶找到生长点进行生长;在1000-1100℃左右生长,晶转速率为5-30rpm,降温速率为每天0.1-5℃;生长结束,晶体提出液面,以5-40℃/h降温退火。生长出的单晶为显露(001)自然生长面的四方形晶体,晶体质量好,没有助溶剂包裹体,成分均一性好。通过对生长的晶体的X射线粉末衍射、介电、铁电、压电性能测试分析,确定其结构和性能。The initial raw material PbO or Pb 3 O 4 , Y 2 O 3 , MgO, TiO 2 , Nb 2 O 5 , co-solvent using PbO or Pb 3 O 4 and H 3 BO 3 or B 2 O 3 composite co-solvent, according to the ratio 0.18PYN-0.44PMN-0.38PT weighing, stirring, mixing and grinding. Put the uniformly mixed powder into a platinum crucible, and place the platinum crucible in a crystal growth furnace to form the material. Heat the prepared material above the supersaturation temperature, keep the temperature for a certain period of time, and use the seed crystal to find the growth point to grow; grow at about 1000-1100 °C, the crystal rotation rate is 5-30 rpm, and the cooling rate is 0.1-5 °C per day; After the growth is over, the crystal is lifted out of the liquid surface, and the temperature is lowered and annealed at 5-40°C/h. The grown single crystal is a square crystal with (001) natural growth surface exposed, the crystal quality is good, there is no co-solvent inclusion, and the composition uniformity is good. Through the X-ray powder diffraction, dielectric, ferroelectric and piezoelectric performance test and analysis of the grown crystal, its structure and performance are determined.
实施例4:Example 4:
采用高温溶液法生长PYN-PMN-PT铁电单晶材料。The PYN-PMN-PT ferroelectric single crystal material was grown by high temperature solution method.
将初始原料PbO或Pb3O4、Y2O3、MgO、TiO2、Nb2O5,助溶剂采用PbO或Pb3O4和H3BO3或B2O3复合助溶剂,按照比例0.22PYN-0.44PMN-0.34PT称量,搅拌混合研磨。将混合均匀的粉料装入铂金坩埚中,并把铂金坩埚置于晶体生长炉中化料。将化好的料加热至过饱和温度以上,恒温一定时间,用籽晶找到生长点进行生长;在1000-1100℃左右生长,晶转速率为5-30rpm,降温速率为每天0.1-5℃;生长结束,晶体提出液面,以5-40℃/h降温退火。生长出的单晶为显露(001)自然生长面的四方形晶体,晶体质量好,没有助溶剂包裹体,成分均一性好。通过对生长的晶体的X射线粉末衍射、介电、铁电、压电性能测试分析,确定其结构和性能。The initial raw material PbO or Pb 3 O 4 , Y 2 O 3 , MgO, TiO 2 , Nb 2 O 5 , co-solvent using PbO or Pb 3 O 4 and H 3 BO 3 or B 2 O 3 composite co-solvent, according to the ratio 0.22PYN-0.44PMN-0.34PT weighing, stirring, mixing and grinding. Put the uniformly mixed powder into a platinum crucible, and place the platinum crucible in a crystal growth furnace to form the material. Heat the prepared material above the supersaturation temperature, keep the temperature for a certain period of time, and use the seed crystal to find the growth point to grow; grow at about 1000-1100 °C, the crystal rotation rate is 5-30 rpm, and the cooling rate is 0.1-5 °C per day; After the growth is over, the crystal is lifted out of the liquid surface, and the temperature is lowered and annealed at 5-40°C/h. The grown single crystal is a square crystal with (001) natural growth surface exposed, the crystal quality is good, there is no co-solvent inclusion, and the composition uniformity is good. Through the X-ray powder diffraction, dielectric, ferroelectric and piezoelectric performance test and analysis of the grown crystal, its structure and performance are determined.
实施例5:Example 5:
将实施例1、2、3和4中的PYN-PMN-PT铁电晶体材料进行结构和性能测试,优选组分0.18PYN-0.44PMN-0.38PT进行结构和性能测试。The PYN-PMN-PT ferroelectric crystal materials in Examples 1, 2, 3 and 4 were subjected to structure and performance tests, and the preferred component 0.18PYN-0.44PMN-0.38PT was subjected to structure and performance tests.
a)将晶体切一小片研碎磨细成粉体用于粉末衍射用。根据所得铁电晶体的粉末衍射谱图表明室温0.18PYN-0.44PMN-0.38PT铁电晶体为三方钙钛矿结构。a) Cut the crystal into a small piece and grind it into powder for powder diffraction. According to the powder diffraction spectrum of the obtained ferroelectric crystal, it shows that the room temperature 0.18PYN-0.44PMN-0.38PT ferroelectric crystal has a trigonal perovskite structure.
b)将所得到的铁电晶体材料按(001)方向切一小片,然后用不同的砂纸将切片两面打磨光滑。在打磨光滑的两面被上银电极,并在80℃、5kV/cm的直流电场下极化15分钟,然后保持电场降到室温,并放电24小时。制备好的样品用于压电性能d33和介电温谱的测试。所测得的压电系数为1608pC/N。测完压电系数后进行介电温谱测试,先测极化的样品,然后测退极化的样品。测量0.18PYN-0.44PMN-0.38PT铁电晶体的介电温谱,温度从-50℃到300℃。介电温谱图显示得到的铁电晶体材料的居里温度TC为145℃;从极化的样品的介电温谱图上得到三方-四方相变温度Trt为95℃。室温下的介电常数和介电损耗分别约为3000和0.023。b) Cut the obtained ferroelectric crystal material into a small slice according to the (001) direction, and then smooth both sides of the slice with different sandpapers. Silver electrodes were applied on both polished and smooth sides, and polarized at 80°C under a DC electric field of 5kV/cm for 15 minutes, then kept the electric field down to room temperature, and discharged for 24 hours. The prepared samples are used for the test of piezoelectric performance d 33 and dielectric thermogram. The measured piezoelectric coefficient is 1608pC/N. After measuring the piezoelectric coefficient, carry out the dielectric thermometry test, first measure the polarized sample, and then measure the depolarized sample. Measure the dielectric temperature spectrum of 0.18PYN-0.44PMN-0.38PT ferroelectric crystal, the temperature is from -50℃ to 300℃. The dielectric thermogram shows that the Curie temperature T C of the obtained ferroelectric crystal material is 145°C; from the dielectric thermogram of the polarized sample, the trigonal-tetragonal phase transition temperature T rt is 95°C. The dielectric constant and dielectric loss at room temperature are about 3000 and 0.023, respectively.
c)将所得到的铁电晶体材料按(001)方向切一小片,然后用不同的砂纸将切片两面打磨光滑。在打磨光滑的两面被上银电极用于电滞回线的测试。测量不同电场下的电滞回线。在+/-6kV/cm的交流电场下达到饱和,此时矫顽场Ec为3.38V/cm,剩余极化Pr为29.35μC/cm2。c) Cut the obtained ferroelectric crystal material into a small slice according to the (001) direction, and then smooth both sides of the slice with different sandpapers. Silver electrodes were applied to the polished smooth sides for the hysteresis loop test. Measure the hysteresis loops under different electric fields. Saturation is achieved under an AC electric field of +/-6kV/cm, the coercive field E c is 3.38V/cm, and the remanent polarization P r is 29.35μC/cm 2 .
由上述实施例可知,PYN-PMN-PT铁电晶体材料具有较好的铁电、压电性能和温度稳定性,有应用前景。另外,以上的实施例只用于对本发明进行进一步说明,不能理解为对本发明保护范围的限制,本领域的技术人员根据本发明的上述内容作出的一些非本质的改进和调整均属于本发明的保护范围。It can be seen from the above examples that the PYN-PMN-PT ferroelectric crystal material has good ferroelectric and piezoelectric properties and temperature stability, and has a promising application prospect. In addition, the above examples are only used to further illustrate the present invention, and should not be understood as limiting the protection scope of the present invention. Some non-essential improvements and adjustments made by those skilled in the art according to the above contents of the present invention all belong to the present invention protected range.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310578843.5A CN103603042A (en) | 2013-11-18 | 2013-11-18 | Ferroelectric monocrystal yttrium lead niobate-magnesium lead niobate-lead titanate as well as preparation and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310578843.5A CN103603042A (en) | 2013-11-18 | 2013-11-18 | Ferroelectric monocrystal yttrium lead niobate-magnesium lead niobate-lead titanate as well as preparation and application thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103603042A true CN103603042A (en) | 2014-02-26 |
Family
ID=50121302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310578843.5A Pending CN103603042A (en) | 2013-11-18 | 2013-11-18 | Ferroelectric monocrystal yttrium lead niobate-magnesium lead niobate-lead titanate as well as preparation and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103603042A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106637405A (en) * | 2015-10-30 | 2017-05-10 | 中国科学院福建物质结构研究所 | An infinitely mixable and meltable ferroelectric solid solution monocrystalline lead scandium niobate-lead magnesium niobate-lead titanate and a preparing method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208183A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Oxide piezoelectric material |
CN1750995A (en) * | 2003-07-11 | 2006-03-22 | 艾布尔光子学有限公司 | Ferroelectric ceramic compound, ferroelectric ceramic single crystal and preparation method thereof |
US20090025628A1 (en) * | 2005-08-17 | 2009-01-29 | Pengdi Han | Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (pmn-pt) solid solutions and related piezocrystals |
CN101985775A (en) * | 2010-11-29 | 2011-03-16 | 中国科学院上海硅酸盐研究所 | Ternary system relaxation ferroelectric single crystal material and preparation method thereof |
CN102051685A (en) * | 2009-10-28 | 2011-05-11 | 中国科学院福建物质结构研究所 | Novel ferroelectric single-crystal lead ytterbium niobate-lead magnesium niobate-lead titanate |
CN102817080A (en) * | 2012-09-04 | 2012-12-12 | 中国科学院上海硅酸盐研究所 | Lead lutetioniobate-lead magnesioniobate-lead titanate ternary-system relaxation ferroelectric monocrystal and preparation method thereof |
CN103172373A (en) * | 2012-12-12 | 2013-06-26 | 中国科学院福建物质结构研究所 | Ternary ferroelectric solid solution lead niobate ytterbate-lead zinc niobate-lead titanate |
-
2013
- 2013-11-18 CN CN201310578843.5A patent/CN103603042A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208183A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Oxide piezoelectric material |
CN1750995A (en) * | 2003-07-11 | 2006-03-22 | 艾布尔光子学有限公司 | Ferroelectric ceramic compound, ferroelectric ceramic single crystal and preparation method thereof |
US20090025628A1 (en) * | 2005-08-17 | 2009-01-29 | Pengdi Han | Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (pmn-pt) solid solutions and related piezocrystals |
CN102051685A (en) * | 2009-10-28 | 2011-05-11 | 中国科学院福建物质结构研究所 | Novel ferroelectric single-crystal lead ytterbium niobate-lead magnesium niobate-lead titanate |
CN101985775A (en) * | 2010-11-29 | 2011-03-16 | 中国科学院上海硅酸盐研究所 | Ternary system relaxation ferroelectric single crystal material and preparation method thereof |
CN102817080A (en) * | 2012-09-04 | 2012-12-12 | 中国科学院上海硅酸盐研究所 | Lead lutetioniobate-lead magnesioniobate-lead titanate ternary-system relaxation ferroelectric monocrystal and preparation method thereof |
CN103172373A (en) * | 2012-12-12 | 2013-06-26 | 中国科学院福建物质结构研究所 | Ternary ferroelectric solid solution lead niobate ytterbate-lead zinc niobate-lead titanate |
Non-Patent Citations (5)
Title |
---|
《CHEMISTRY OF MATERIALS》 * |
CHAO HE等: "Preparation and Characterization of New Pb(Yb1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Ternary Piezo-/Ferroelectric Crystals", 《CHEMISTRY OF MATERIALS》 * |
SALAK等: "Structure transformations and dielectric properties of PbY1/2Nb1/2O3 and PbHo1/2Nb1/2O3 compounds", 《MATERIALS RESEARCH BULLETIN》 * |
W. QIU等: "Effects of addition of PbY1/2Nb1/2O3 (PYN) on microstructure and piezoelectric properties of Pb(Zr0.53Ti0.47)O3", 《CERAMICS INTERNATIONAL》 * |
董火民等: "Pb(Y1/2Nb1/2)O3-PbTiO3-PbZrO3压电陶瓷相图研究", 《压电与声光》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106637405A (en) * | 2015-10-30 | 2017-05-10 | 中国科学院福建物质结构研究所 | An infinitely mixable and meltable ferroelectric solid solution monocrystalline lead scandium niobate-lead magnesium niobate-lead titanate and a preparing method thereof |
CN106637405B (en) * | 2015-10-30 | 2019-04-16 | 中国科学院福建物质结构研究所 | Ferroelectric sosoloid monocrystalline lead scandate columbate-lead magnesium niobate-lead titanate and preparation method thereof of unlimited consolute |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zhang et al. | High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective | |
Ye | High-performance piezoelectric single crystals of complex perovskite solid solutions | |
JP5281657B2 (en) | Method for producing ternary piezoelectric crystal | |
CN102051685A (en) | Novel ferroelectric single-crystal lead ytterbium niobate-lead magnesium niobate-lead titanate | |
CN101985775A (en) | Ternary system relaxation ferroelectric single crystal material and preparation method thereof | |
CN103774228B (en) | Lead scandate columbate-PMN-PT ferro-electricity single crystal and preparation method thereof | |
Priya et al. | Dielectric and piezoelectric properties of the Mn-substituted Pb (Zn 1/3 Nb 2/3) O 3–PbTiO 3 single crystal | |
CN102817080A (en) | Lead lutetioniobate-lead magnesioniobate-lead titanate ternary-system relaxation ferroelectric monocrystal and preparation method thereof | |
KR102698322B1 (en) | Polar nano-stationary engineering-relaxed-PbTiO3 ferroelectric crystals | |
CN102560617A (en) | Method for preparing ferroelectric single crystal lead indium niobate-lead titanate | |
CN103014863B (en) | Antiferroelectric monocrystalline niobium lutetium lead plumbate and its production and use | |
CN106637405B (en) | Ferroelectric sosoloid monocrystalline lead scandate columbate-lead magnesium niobate-lead titanate and preparation method thereof of unlimited consolute | |
CN103966659B (en) | The preparation method of potassium-sodium niobate KNN monocrystalline | |
Zhou et al. | Dielectric and piezoelectric properties of lead-free (K0. 44Na0. 46) NbO3-0.5% MnO2 single crystals grown by the TSSG method | |
CN102644114A (en) | Ferroelectric monocrystal lead lutecium niobate-lead titanate and preparation method thereof | |
Li et al. | High‐Performance Ferroelectric Solid Solution Crystals: Pb (In 1/2 Nb 1/2) O 3–Pb (Zn 1/3 Nb 2/3) O 3–PbTiO 3 | |
CN103046138A (en) | Ferroelectric monocrystal lead ferrite niobate-lead ytterbium niobate-lead titanate and preparation method thereof | |
CN1196817C (en) | Growth of lead indium niobate-lead titanate single crystal with high Curie point by crucible descent method | |
Li et al. | Microstructure and electrical properties of Pb (Zr0. 5Ti0. 5) O3-Pb (Zn1/3Nb2/3) O3-Pb (Ni1/3Nb2/3) O3+ xS3Ti2O7 ceramics | |
CN103710754A (en) | Ferroelectric piezoelectric single crystal lead holmium niobate-lead magnesium niobate-lead titanate as well as preparation and application thereof | |
CN103603042A (en) | Ferroelectric monocrystal yttrium lead niobate-magnesium lead niobate-lead titanate as well as preparation and application thereof | |
CN102817068B (en) | A kind of preparation method of sodium bismuth titanate-lead titanate piezoelectric monocrystal | |
CN102492991A (en) | Lead niobate zincate-lead titanate (PZNT) single crystal material and pyroelectric application thereof | |
CN105154976B (en) | A kind of lead scandate columbate lead magnesio-niobate lead zirconium titanate lead plumbate ferroelectric single crystal material | |
Lu et al. | Top-seeded solution growth and characterization of PMN–0.31 PT piezoelectric single crystals |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140226 |