CN103594505A - High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof - Google Patents
High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
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- H—ELECTRICITY
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
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Abstract
本发明公开了一种用于减弱局部放电效果的高压IGBT模块的制造方法以及具有局部放电减弱行为的高压IGBT模块，通过在电绝缘衬底上下导电层之间淀积半导体氢化非晶薄膜以降低导电层与电绝缘衬底边界处电场强度，降低IGBT模块局部放电视在电荷，提高模块局部放电通过率，使得电场极大值处电场强度减弱明显，局部放电视在电荷减小，IGBT模块局部放电测试通过率提高。
The invention discloses a manufacturing method of a high-voltage IGBT module for weakening partial discharge effect and a high-voltage IGBT module with partial discharge weakening behavior, by depositing a semiconductor hydrogenated amorphous film between the upper and lower conductive layers of an electric insulating substrate to reduce The electric field intensity at the boundary between the conductive layer and the electrically insulating substrate reduces the partial discharge electric charge of the IGBT module and improves the partial discharge pass rate of the module, so that the electric field intensity at the maximum value of the electric field is significantly weakened, and the local discharge electric charge is reduced, and the local discharge of the IGBT module The pass rate of discharge test is improved.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate in particular to a kind of for weaken partial discharge effect high pressure IGBT module manufacture method and there is the high pressure IGBT module that partial discharge weakens behavior.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, be called for short in full IGBT) characteristic of property that there is high-frequency, high voltage, large electric current, especially easily turn on and off, it is the most representative product of the power electronic technology revolution for the third time of generally acknowledging in the world, so far developed into for the 6th generation, commercialization developed into for the 5th generation.At present, IGBT has been widely used in all trades and professions of national economy.
IGBT module is mainly used in major loop inverter and all inverter circuits of frequency converter, i.e. in DC/AC conversion.The novel power transistor that the IGBT module of take is now representative is the core switching components and parts of high-frequency power electronic circuit and control system, now be widely used in the fields such as electric locomotive, high voltage power transmission and transforming, electric automobile, servo controller, UPS, Switching Power Supply, power of chopping, market prospects are very good.
IGBT module combines the advantage of high power transistor (GTR) and high-power field-effect transistor (MOSFET), is more satisfactory full-control type device, has and controls the advantages such as convenient, switching speed is fast, operating frequency is high, safety operation area is large.IGBT module capacity has reached 2000A/6500V at present, meets power electronics and power drives field application requirements.Yet along with the rising of IGBT power module voltage grade, the electric field that insulation system bears is more and more stronger, it is unpractiaca that partial discharge does not occur completely.At present, IGBT module partial discharge conventionally according to GB/T7305-2003/IEC60270:2000 standard method test, in test, partial discharge apparent charge is limited in to 10pC, guarantee module energy trouble free service and have sufficiently long useful life.The module degradation by test is not used or scraps, and greatly reduces production efficiency.
In IGBT module, AlN pottery and copper clad plate engagement edge radius of curvature are less, and electric field is concentrated.Meanwhile, on AlN pottery, copper clad plate is formed by etching conventionally, easily causes metal edge inhomogeneous in corrosion process, and electric field further strengthens, and causes the generation of partial discharge.In the article < < Analysis of Insulation Failure Modes in High Power IGBT Modules > > that the people such as 2005 J.H.Fabian of Nian， Switzerland ABB AB deliver at it, by the method for numerical simulation, determine that high pressure IGBT module electric field maximum is positioned at copper-clad on DCB plate, AlN pottery and silicon gel intersection.2010, the people such as Ning-yan Wang by experiment method observed discharge position and occur in module electric field maximum place.2013, in the article < < Partial Discharges in Ceramic Substrates Embedded in Liquids and Gels > > that the people such as J.-L.Aug é deliver at it, explicitly pointing out copper-clad, AlN pottery and the electric discharge of silicon gel intersection was the main cause that causes the test of IGBT module partial discharge not passed through.
Therefore, how reducing electric field maximum place electric field strength is to improve IGBT insulation module performance, reduces the key of partial discharge apparent charge.
Conventionally, improving IGBT module partial discharge performance has two aspects, uses new insulating material on the one hand, improves the ability that it bears electric field; By simulation calculation or measurement, there is the position of partial discharge in judgement, by change structure and Optimization Technology, reduces electric field strength, avoids the generation of partial discharge on the other hand.
In US Patent No. 6201696B1, by cover Insulating Polyester (Polyester) or epoxy resin on AlN pottery and copper-clad border, improve partial discharge ability.Due to AlN pottery and copper-clad surface ratio more coarse, while covering Insulating Polyester or epoxy resin, the bad and air of key position adhesiveness easily remains in the ceramic and copper-clad boundary of AlN, further causes the generation of partial discharge.
Switzerland ABB AB also applies for a patent (application number: 200480009083.5) cover the generation that low viscosity monomer or oligomer (oligomer) polyimides (polyimide) reduce partial discharge on copper-clad and AlN pottery border.It is enough low to guarantee that it can cover ceramic substrate and copper-clad corner that polyimide precursor use amount and viscosity are wanted, polyimide precursor need to add siloxy group (siloxane based) class adhesive promoter simultaneously, improves adhesive capacity between metal and pottery.Covering is reunited needs to carry out 1 hour 200～350 ℃ solidifies after imide precursor, and the monomer in polyimide precursor and oligomer polymerization form polyimides.Technique comparatively complexity and controllability poor.
Although said method can reduce the generation of partial discharge, do not reduce electric field maximum place electric field strength, root problem is not resolved.
Summary of the invention
In view of this, it is a kind of for weakening the manufacture method of the high pressure IGBT module of partial discharge effect that one of object of the present invention is to provide, and reduces IGBT module electric field maximum place electric field strength.Another object of the present invention is to provide a kind of high pressure IGBT module that partial discharge weakens behavior that has.
For achieving the above object, the present invention by the bottom of electrically insulating substrate between upper and lower conductive layers the hydrogenated amorphous film of deposition of semiconductor to reduce conductive layer and electrically insulating substrate's bottom boundaries place electric field strength, reduce IGBT module partial discharge apparent charge, improve module partial discharge percent of pass.
Concrete, the invention provides following technical scheme:
The manufacture method of the high pressure IGBT module that partial discharge of the present invention weakens, specifically comprises the steps:
(1) at the bottom of an electrically insulating substrate is provided, on two surfaces at the bottom of described electrically insulating substrate, conductive layer is set respectively, the periphery top area at the bottom of described electrically insulating substrate is not covered by described conductive layer, form surface without the substrate bared end of conducting objects;
(2) at other region division mask layers except described substrate bared end surface, the hydrogenated amorphous thin layer of deposited semiconductor, remove described mask layer and on the hydrogenated amorphous thin layer of semiconductor, described substrate bared end is coated by the hydrogenated amorphous thin layer of semiconductor, is communicated with both sides conductive layer;
(3) semiconductor chip is joined on the conductive layer of a side, the conductive layer of opposite side joins on base plate by solder mask.
Preferably, at the bottom of described electrically insulating substrate, be AlN pottery.
Preferably, described conductive layer is copper clad plate.
The hydrogenated amorphous film of described semiconductor is a-Si:H, a-Ge:H, a-SiGe:H, a-SiC:H, and preferred, the hydrogenated amorphous film of described semiconductor is a-Si:H.
Further, described a-Si:H thin layer strengthens chemical vapour deposition (CVD) (RF-PECVD) method deposition by radio frequency plasma and forms.
Preferably, the hydrogenated amorphous thin layer thickness of described semiconductor is 300nm, and conductivity is 10
5Ω .cm.
Preferably, described base plate is AlSiC.
The high pressure IGBT module that partial discharge of the present invention weakens, comprising:
At the bottom of electrically insulating substrate;
Be arranged on two lip-deep conductive layers at the bottom of described electrically insulating substrate, the periphery top area at the bottom of described electrically insulating substrate is not covered by described conductive layer, forms surface without the substrate bared end of conducting objects;
Be bonded at least one semiconductor chip on a side conductive layer;
By solder mask, be bonded on the base plate on opposite side conductive layer;
Described substrate bared end is coated by the hydrogenated amorphous thin layer of semiconductor, is communicated with the conductive layer of both sides at the bottom of described electrically insulating substrate.
The hydrogenated amorphous film of described semiconductor is a-Si:H, a-Ge:H, a-SiGe:H, a-SiC:H, and preferred, the hydrogenated amorphous film of described semiconductor is a-Si:H.
Preferably, the hydrogenated amorphous thin layer thickness of described semiconductor is 300nm, and conductivity is 10
5Ω .cm.
Preferably, at the bottom of described electrically insulating substrate, be AlN pottery; Described conductive layer is copper clad plate; Described base plate is AlSiC.
The present invention, by the hydrogenated amorphous film of upper and lower conductive layers edge deposition of semiconductor at the bottom of IGBT module electrically insulating substrate, rationally adjusts the hydrogenated amorphous film thickness of semiconductor and conductivity and controls current strength between collector electrode and ground.Regularly, Electric Field Distribution changes current strength one, and electric field maximum place electric field strength weakens obviously, and partial discharge apparent charge reduces, and IGBT module partial discharge test percent of pass improves.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing relevant of the present invention in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the high pressure IGBT module that weakens of partial discharge of the present invention;
Fig. 2 is definite structure and principle schematic of the hydrogenated amorphous film thickness of semiconductor of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belongs to the scope of protection of the invention.
Design of the present invention is to can be, but not limited to by the meteorological sedimentation (PECVD) of plasma-reinforced chemical deposition of semiconductor hydrogenated amorphous film in upper and lower conductive layers edge at the bottom of IGBT module electrically insulating substrate, as a-Si:H, a-Ge:H, a-SiGe:H, a-SiC:H etc., upper and lower conductive layers electricity is communicated with, during the work of IGBT module, has very little electric current to flow to ground by collector electrode.The hydrogenated amorphous film thickness of semiconductor of deposit and doping content will be controlled proper, make current strength want enough little of to meet the insulating requirements of IGBT module.Current lead-through changes Electric Field Distribution between conductive layer, by reasonable control current strength, reduces electric field maximum place electric field strength, reduces the generation of partial discharge herein.
The high pressure IGBT modular structure that the partial discharge that the present invention proposes weakens as shown in Figure 1, comprising:
At the bottom of electrically insulating substrate 1;
Be arranged on 1 two lip-deep conductive layers 2 at the bottom of electrically insulating substrate, at the bottom of electrically insulating substrate, 1 periphery top area is not covered by conductive layer 2, forms surface without the substrate bared end of conducting objects;
Be bonded at least one semiconductor chip 3 on a side conductive layer 2;
By solder mask 4, be bonded on the base plate 5 on opposite side conductive layer 2;
Substrate bared end is coated by the hydrogenated amorphous thin layer 6 of semiconductor, the conductive layer 2 of 1 both sides at the bottom of connection electrically insulating substrate.
With reference to accompanying drawing 1, concrete step is as follows:
(1) provide at the bottom of AlN ceramic electrical dielectric substrate 1 ， electrically insulating substrate on two surfaces of 1 copper clad plate conductive layer 2 is set respectively, make at the bottom of electrically insulating substrate 1 periphery top area by conductive layer 2, do not covered, form surface without the substrate bared end of conducting objects;
(2) in other region division mask layer (not shown)s except substrate bared end surface, the hydrogenated amorphous thin layer of deposited semiconductor, remove mask layer and on the hydrogenated amorphous thin layer of semiconductor, substrate bared end is coated by the hydrogenated amorphous thin layer 6 of semiconductor, is communicated with both sides conductive layer 2;
(3) semiconductor chip 3 is joined on the conductive layer 2 of a side, the conductive layer 2 of opposite side joins on AlSiC base plate 5 by solder mask 4.
Semiconductor noncrystal membrane deposition temperature is lower, conventionally, below 400 ℃, is convenient to large-scale production, and cost is lower.Yet semiconductor noncrystal membrane is a random network, certainly exists a large amount of dangling bonds, defect state density is 10
21cm
-3left and right.So high defect concentration is not suitable for application, so conventionally hydrogen atom is embedded to saturated dangling bonds in amorphous networks of atoms, forms Si-H key, reaches the object of passivation.
It is example that the employing radio frequency plasma of take strengthens chemical vapour deposition technique (RF-PECVD) deposit a-Si:H film between the upper and lower copper-clad of IGBT module DBC plate.With silane (SiH
4, 10%in H
2), germane (GeH
4, 5%in H
2) and CH
4(purity 99.99%) is growth source gas, H
2(purity 99.99%) as carrier gas, diborane (B
2h
6, 1.04%in H
2) and phosphine (PH
3, 1%in H
2) be doped source, rf frequency 13.56MHz.
Experiment need to be carried out many experiments with controlled doping semiconductor noncrystal membrane (take a-Si:H as example) deposition rate and conductivity early stage.As shown in Figure 2, change and pass into reaction cavity diborane and phosphine flow, on simple glass slide 11, deposit a-Si:H film 12, composes by the transmitance within the scope of measurement of ultraviolet-visible spectrophotometer 400nm～2200nm, determines film thickness.On the a-Si:H of deposit film 12, deposited by electron beam evaporation is prepared coplanar Al electrode 13, with Keithley6517 type high resistant instrument 14, measures room temperature dark conductivity.According to film thickness and Al electrode 13 spacing W and width L, by following formula, calculate film conductivity.
Wherein V is the voltage between two coplanar electrodes, the electric current of I for measuring, and L is electrode width, and D is a-Si:H film thickness, and W is electrode spacing.
In PECVD process, IGBT module should have metal mask to protect other position.Meanwhile, due to deposition film isotropism in PECVD process, IGBT module only needs a deposit to complete.
The hydrogenated amorphous film thickness of semiconductor and conductivity need strict control, to meet the requirement of different size IGBT module.On current is too little, and On current is on Electric Field Distribution without impact, and hydrogenated amorphous film is inoperative.On current is too large, and insulation module performance is endangered.Calculating shows, when flowing through the hydrogenated amorphous film electric current of semiconductor and be just greater than DBC plate capacitance current, electric field maximum place (Electrical-field peak) electric field strength reduces the most obvious.The typical hydrogenated amorphous film thickness of semiconductor is controlled at 300nm, and conductivity is controlled at 10
5Ω .cm.
Eventually the above, the present invention, by the hydrogenated amorphous film of upper and lower conductive layers edge deposition of semiconductor at the bottom of IGBT module electrically insulating substrate, rationally adjusts the hydrogenated amorphous film thickness of semiconductor and conductivity and controls current strength between collector electrode and ground.Regularly, Electric Field Distribution changes current strength one, and electric field maximum place electric field strength weakens obviously, and partial discharge apparent charge reduces, and IGBT module partial discharge test percent of pass improves.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and in the situation that not deviating from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, is therefore intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should make specification as a whole, and the technical scheme in each embodiment also can, through appropriately combined, form other execution modes that it will be appreciated by those skilled in the art that.
Claims (10)
1. a manufacture method for the high pressure IGBT module that partial discharge weakens, is characterized in that, comprises the steps:
(1) at the bottom of an electrically insulating substrate is provided, on two surfaces at the bottom of described electrically insulating substrate, conductive layer is set respectively, the periphery top area at the bottom of described electrically insulating substrate is not covered by described conductive layer, form surface without the substrate bared end of conducting objects;
(2) at other region division mask layers except described substrate bared end surface, the hydrogenated amorphous thin layer of deposited semiconductor, remove described mask layer and on the hydrogenated amorphous thin layer of semiconductor, described substrate bared end is coated by the hydrogenated amorphous thin layer of semiconductor, is communicated with both sides conductive layer;
(3) semiconductor chip is joined on the conductive layer of a side, the conductive layer of opposite side joins on base plate by solder mask.
2. manufacture method according to claim 1, is characterized in that: the hydrogenated amorphous film of described semiconductor is a-Si:H, a-Ge:H, a-SiGe:H, a-SiC:H.
3. manufacture method according to claim 2, is characterized in that: the hydrogenated amorphous thin layer thickness of described semiconductor is 300nm, and conductivity is 10
5Ω .cm.
4. manufacture method according to claim 2, is characterized in that: the hydrogenated amorphous film of described semiconductor is a-Si:H.
5. manufacture method according to claim 4, is characterized in that: described a-Si:H thin layer strengthens chemical vapour deposition technique deposition by radio frequency plasma and forms.
6. the high pressure IGBT module that partial discharge weakens, comprising:
At the bottom of electrically insulating substrate;
Be arranged on two lip-deep conductive layers at the bottom of described electrically insulating substrate, the periphery top area at the bottom of described electrically insulating substrate is not covered by described conductive layer, forms surface without the substrate bared end of conducting objects;
Be bonded at least one semiconductor chip on a side conductive layer;
By solder mask, be bonded on the base plate on opposite side conductive layer;
It is characterized in that: described substrate bared end is coated by the hydrogenated amorphous thin layer of semiconductor, be communicated with the conductive layer of both sides at the bottom of described electrically insulating substrate.
7. high pressure IGBT module according to claim 6, is characterized in that: the hydrogenated amorphous film of described semiconductor is a-Si:H, a-Ge:H, a-SiGe:H, a-SiC:H.
8. high pressure IGBT module according to claim 7, is characterized in that: the hydrogenated amorphous film of described semiconductor is a-Si:H.
9. high pressure IGBT module according to claim 7, is characterized in that: the hydrogenated amorphous thin layer thickness of described semiconductor is 300nm, and conductivity is 10
5Ω .cm.
10. high pressure IGBT module according to claim 6, is characterized in that: at the bottom of described electrically insulating substrate, be AlN pottery; Described conductive layer is copper clad plate; Described base plate is AlSiC.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310598353.1A CN103594505A (en) | 2013-11-21 | 2013-11-21 | High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof |
| PCT/CN2014/082793 WO2015074431A1 (en) | 2013-11-21 | 2014-07-23 | High-voltage igbt module with partial discharge attenuation and manufacturing method therefor |
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|---|---|---|---|
| CN201310598353.1A CN103594505A (en) | 2013-11-21 | 2013-11-21 | High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof |
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| WO (1) | WO2015074431A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015074431A1 (en) * | 2013-11-21 | 2015-05-28 | 西安永电电气有限责任公司 | High-voltage igbt module with partial discharge attenuation and manufacturing method therefor |
| WO2016050451A1 (en) * | 2014-09-30 | 2016-04-07 | Siemens Aktiengesellschaft | Power module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3091867B1 (en) | 2019-01-23 | 2022-01-07 | Univ Toulouse 3 Paul Sabatier | Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component |
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|---|---|---|---|---|
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| US20040099948A1 (en) * | 2002-10-05 | 2004-05-27 | Thomas Stockmeier | Power semiconductor module with improved insulation strength |
| CN1774801A (en) * | 2003-04-02 | 2006-05-17 | Abb研究有限公司 | Insulated power semiconductor module with reduced partial discharge and manufacturing method |
| EP2302676A1 (en) * | 2009-09-29 | 2011-03-30 | ABB Technology AG | High power semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3153638B2 (en) * | 1992-06-26 | 2001-04-09 | 三菱電機株式会社 | Pressure contact type semiconductor device, method of manufacturing the same, and heat compensator |
| EP0789397B1 (en) * | 1996-02-07 | 2004-05-06 | Hitachi, Ltd. | Circuit board and semiconductor device using the circuit board |
| DE69923374T2 (en) * | 1998-05-28 | 2006-01-19 | Hitachi, Ltd. | Semiconductor device |
| CN103594505A (en) * | 2013-11-21 | 2014-02-19 | 西安永电电气有限责任公司 | High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof |
-
2013
- 2013-11-21 CN CN201310598353.1A patent/CN103594505A/en active Pending
-
2014
- 2014-07-23 WO PCT/CN2014/082793 patent/WO2015074431A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| US20040099948A1 (en) * | 2002-10-05 | 2004-05-27 | Thomas Stockmeier | Power semiconductor module with improved insulation strength |
| CN1774801A (en) * | 2003-04-02 | 2006-05-17 | Abb研究有限公司 | Insulated power semiconductor module with reduced partial discharge and manufacturing method |
| EP2302676A1 (en) * | 2009-09-29 | 2011-03-30 | ABB Technology AG | High power semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| G.MITIC等: "IGBT module technology with high partial discharge resistance", 《INDUSTRY APPLICATIONS CONFERENCE, 2001. THIRTY-SIXTH IAS ANNUAL MEETING. CONFERENCE RECORD OF THE 2001 IEEE (VOLUME:3 )》, vol. 3, 4 October 2001 (2001-10-04), pages 1899 - 1904 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015074431A1 (en) * | 2013-11-21 | 2015-05-28 | 西安永电电气有限责任公司 | High-voltage igbt module with partial discharge attenuation and manufacturing method therefor |
| WO2016050451A1 (en) * | 2014-09-30 | 2016-04-07 | Siemens Aktiengesellschaft | Power module |
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| Publication number | Publication date |
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| WO2015074431A1 (en) | 2015-05-28 |
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Application publication date: 20140219 |