CN103579729B - A kind of spaceborne high-frequency microstrip is to the vertical change-over circuit of waveguide broad-band filter with low insertion loss - Google Patents
A kind of spaceborne high-frequency microstrip is to the vertical change-over circuit of waveguide broad-band filter with low insertion loss Download PDFInfo
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Abstract
一种星载高频微带至波导宽带低插损垂直转换电路,属于微波毫米波在波导微带之间过渡转换技术。该转换电路包括顺序连接的微带线,开路匹配枝节端头、微带到同轴线端头间的互联金带,端头扁平并烧结在腔体中的同轴玻璃体绝缘子,焊接在绝缘子端头的阶梯型探针。本发明实现了矩形波导与微带线两者主模之间电磁场的模式过渡转换,完成矩形波导与微带线之间电磁信号的传输,具有设计巧妙、结构紧凑、可密封、转换传输方向可同向设计、插损小、频带宽、驻波特性好的特点。
A space-borne high-frequency microstrip to waveguide broadband low insertion loss vertical conversion circuit belongs to microwave and millimeter wave transition conversion technology between waveguide microstrips. The conversion circuit includes sequentially connected microstrip lines, open-circuit matching stub ends, interconnected gold strips between the ends of the microstrip coaxial line, coaxial glass insulators with flat ends and sintered in the cavity, welded on the insulator end The stepped probe of the head. The invention realizes the mode transition conversion of the electromagnetic field between the main modes of the rectangular waveguide and the microstrip line, completes the transmission of electromagnetic signals between the rectangular waveguide and the microstrip line, and has the advantages of ingenious design, compact structure, sealability, and the ability to switch transmission directions. Co-directional design, small insertion loss, wide frequency band, and good standing wave characteristics.
Description
技术领域technical field
本发明涉及一种微带到矩形波导的垂直转换电路,具体的说是一种微带经垂直的同轴结构转换到矩形波导的电路,主要应用在高频接收机、发射机、天线等涉及信号传输形式转换的领域。The invention relates to a vertical conversion circuit for a microstrip rectangular waveguide, specifically a circuit for converting a microstrip to a rectangular waveguide through a vertical coaxial structure, and is mainly used in high-frequency receivers, transmitters, antennas, etc. The field of signal transmission form conversion.
背景技术Background technique
微带到波导的转换是一种常用的微波电路转换结构,发展出了多种类型。从架构类型上讲,包括微带到波导的直接过渡,微带经过同轴再转化到波导的过渡;从传输方向上讲,包括微带与波导传输方向垂直,微带与波导传输方向平行两种形式;从密封方向上讲,包括可实现全气密的过渡,以及不能气密的过渡,但一般形式的微带到波导的转换都难以同时兼顾气密性、传输可同向性、以及宽带低插损特性。Microwave-to-waveguide conversion is a commonly used microwave circuit conversion structure, and many types have been developed. From the perspective of architecture type, it includes the direct transition from microstrip to waveguide, and the transition from microstrip to waveguide after coaxial transformation; from the perspective of transmission direction, it includes microstrip and waveguide transmission direction perpendicular to it, and microstrip and waveguide transmission direction parallel to each other. From the perspective of sealing direction, it includes transitions that can achieve full airtightness and non-airtight transitions, but the general form of micro-to-waveguide conversion is difficult to simultaneously take into account airtightness, transmission isotropy, and Broadband low insertion loss characteristics.
发明内容Contents of the invention
本发明的技术解决问题:克服现有技术的不足,提供一种星载高频微带至波导宽带低插损垂直转换电路,具有同向传输、气密性,频带宽,插入损耗低,可靠性高的优点。The technical problem of the present invention is to overcome the deficiencies of the prior art, and provide a vertical conversion circuit with low insertion loss from the space-borne high-frequency microstrip to the waveguide broadband, which has the same direction transmission, airtightness, wide frequency band, low insertion loss, and reliability Advantages of high sex.
本发明的技术解决方案:一种星载高频微带至波导宽带低插损垂直转换电路,其特征在于包括:微带线(1)、开路匹配枝节(2)、互联金带(3)、同轴玻璃绝缘子(4)、镀银铝质阶梯型探针(5)、介质基片(6)、圆柱形通腔(7)、波导腔体(8)和微带腔体(9);其中微带线(1)与开路匹配枝节(2)两者均位于介质基片(6)上,并相互连接,介质基片(6)粘接于微带腔体(9)内表面上,同轴玻璃绝缘子(4)烧结于微带腔体(9)中,玻璃绝缘子(4)引线上端头和下端头均露出腔体外,须保证绝缘子(4)上端头与介质基板(6)之间有间隙,绝缘子(4)上端头与开路匹配枝节(2)通过互联金带(3)压接,镀银铝质阶梯型探针(5)焊接在玻璃绝缘子(4)下端头上,与绝缘子(4)下端面间须留有间隙,探针(5)中心位于波导腔体(8)矩形波导窄边的一半位置,如图2中a/2所标示,圆柱形通腔(7)开于波导腔体(8)上,用以伸入镀银铝质探针(5),通腔(7)中心距波导底面为一定值,如图2中e所标示,该尺寸约为对应传输信号波长的1/4。Technical solution of the present invention: a space-borne high-frequency microstrip to waveguide broadband low insertion loss vertical conversion circuit, which is characterized in that it includes: microstrip line (1), open-circuit matching stub (2), interconnection gold strip (3) , coaxial glass insulator (4), silver-plated aluminum stepped probe (5), dielectric substrate (6), cylindrical through cavity (7), waveguide cavity (8) and microstrip cavity (9) ; Wherein the microstrip line (1) and the open-circuit matching branch (2) are both located on the dielectric substrate (6) and connected to each other, and the dielectric substrate (6) is bonded to the inner surface of the microstrip cavity (9) , the coaxial glass insulator (4) is sintered in the microstrip cavity (9), the upper end and the lower end of the lead of the glass insulator (4) are exposed outside the cavity, and the distance between the upper end of the insulator (4) and the dielectric substrate (6) must be ensured There is a gap between them, the upper end of the insulator (4) is crimped with the open-circuit matching stub (2) through the interconnection gold strip (3), and the silver-plated aluminum stepped probe (5) is welded on the lower end of the glass insulator (4). There must be a gap between the lower end surfaces of the insulator (4), and the center of the probe (5) is located at half of the narrow side of the waveguide cavity (8), as indicated by a/2 in Figure 2, and the cylindrical through cavity (7) It is opened on the waveguide cavity (8) to extend into the silver-plated aluminum probe (5). The distance between the center of the through cavity (7) and the bottom surface of the waveguide is a certain value, as indicated by e in Figure 2, and the dimension is approximately corresponding to 1/4 of the transmitted signal wavelength.
所述介质基片(6)粘接后的高度应与玻璃绝缘子(4)上端头的高度一致,用以保证互联金带(3)两个压接点(玻璃绝缘子(4)上端头与开路匹配枝节(2))处在同一高度上,实现压接互连金带(3)的长度最短,降低电磁场传输的不连续性,互联金带应呈拱形,可以提高互联的抗振可靠度。The height of the dielectric substrate (6) after bonding should be consistent with the height of the upper end of the glass insulator (4), so as to ensure that the two crimping points of the interconnected gold strip (3) (the upper end of the glass insulator (4) matches the open circuit Branches (2)) are at the same height to achieve the shortest length of the crimped interconnection gold strip (3) and reduce the discontinuity of electromagnetic field transmission. The interconnection gold strip should be arched to improve the anti-vibration reliability of the interconnection.
微带线(1)与开路匹配枝节端头(2)均位于同一介质基片上,开路匹配枝节(2)主要是用于综合掉互联金带(3)所引入的电感特性,从而实现同轴到微带之间的阻抗匹配。The microstrip line (1) and the open-circuit matching stub end (2) are both located on the same dielectric substrate, and the open-circuit matching stub (2) is mainly used to synthesize the inductance characteristics introduced by the interconnection gold strip (3), thereby realizing coaxial to the impedance matching between the microstrip.
介质基片(6)与玻璃绝缘子(4)上端头的最近距离应控制0.1mm,如图2中d所标,可以保证互联金带(3)压接跨度小,路径短,绝缘子(4)上端头不与介质基片(6)底面的地短接。The shortest distance between the dielectric substrate (6) and the upper end of the glass insulator (4) should be controlled to 0.1mm, as marked by d in Figure 2, which can ensure that the crimping span of the interconnection gold strip (3) is small and the path is short, and the insulator (4) The upper end is not short-circuited with the ground on the bottom surface of the dielectric substrate (6).
玻璃绝缘子(4)采用焊料烧结在微带腔体中,可以实现微带腔体(9)与波导腔体(8)之间的气体隔离。玻璃绝缘子(4)下端头处于波导腔体(8)圆柱形通孔(7)中,圆柱形通孔(7)孔径大于探针(5)的直径,保证焊接完毕的探针能够深入波导腔体中。圆柱形通孔(7)与探针(5)之间形成了等效的电容,参与了匹配,调整其尺寸可以进一步的拓宽使用带宽,圆柱形通孔(7)距波导腔体(8)矩形波导底面的距离为λ/4(λ为对应传输信号频率的波长),如图2中e所标示。The glass insulator (4) is sintered in the microstrip cavity by using solder, which can realize gas isolation between the microstrip cavity (9) and the waveguide cavity (8). The lower end of the glass insulator (4) is located in the waveguide cavity (8) cylindrical through hole (7), and the diameter of the cylindrical through hole (7) is larger than the diameter of the probe (5), ensuring that the welded probe can penetrate into the waveguide cavity body. An equivalent capacitance is formed between the cylindrical through hole (7) and the probe (5), which participates in the matching. Adjusting its size can further broaden the bandwidth used. The distance between the cylindrical through hole (7) and the waveguide cavity (8) The distance between the bottom surface of the rectangular waveguide is λ/4 (λ is the wavelength corresponding to the transmission signal frequency), as indicated by e in Figure 2 .
铝质镀银探针(5)为阶梯形状,实现波导到同轴之间阻抗的阶梯变化,相对于直筒型探针,可以扩展使用带宽,焊接后探针(5)上端面距玻璃绝缘子(4)下端面应为0.1mm,如图2中h所标示,一方面防止探针重心下移,振动半径过大,另一方面较近的距离也能够降低端头引线所引入的不连续性。探针(5)内部含有如图2所示的焊接孔A与通孔B,增强探针的镀银质量和焊接可靠性。The aluminum silver-plated probe (5) has a stepped shape, which realizes the step change in impedance between the waveguide and the coaxial. Compared with the straight type probe, it can expand the bandwidth of use. After welding, the upper end of the probe (5) is separated from the glass insulator ( 4) The lower end surface should be 0.1mm, as indicated by h in Figure 2. On the one hand, it can prevent the center of gravity of the probe from moving down and the vibration radius is too large. On the other hand, a shorter distance can also reduce the discontinuity introduced by the end lead wire . The inside of the probe (5) contains welding holes A and through holes B as shown in Figure 2, which enhance the silver plating quality and soldering reliability of the probe.
由于采用了同轴互联,同轴内传输的TEM模式决定了微带腔体与波导腔体的传输方向可以任意设置,本设计采用同向设计,为目前微波模块化产品主流思路,具体如图1所示,信号沿微带线(1)传输方向,与信号在波导腔体(8)中的矩形波导的传输方向一致。Due to the coaxial interconnection, the TEM mode of coaxial transmission determines that the transmission direction of the microstrip cavity and the waveguide cavity can be set arbitrarily. This design adopts the same direction design, which is the mainstream idea of microwave modular products at present, as shown in the figure 1, the transmission direction of the signal along the microstrip line (1) is consistent with the transmission direction of the signal in the rectangular waveguide in the waveguide cavity (8).
本发明的实现原理:Realization principle of the present invention:
本发明的实现目标是将信号从微带线转换传输到波导。具体实现原理为,如图1所示,首先通过微带线(1)与开路匹配枝节(2)以及互联压接金带(3)将信号引入同轴绝缘子(4)中,通过同轴玻璃绝缘子(4)导入到焊接在下端头的阶梯型探针(5),该探针(5)置于波导腔体(8)矩形波导主模TE10模的磁场最强处,一般为波导窄边的一半,如图2中a/2所标示,距波导底面为λ/4(对应传输频率的波长),如图2中e所标示,此时反射系数约为1,即信号经波导底面全反射回探针(5)端面所在位置,反射波和入射波在探针处同相叠加,向转换处传输的能量得到加强,所以能够保证尽可能多的信号耦合进入波导腔体,从而得到较低的插入损耗和较好的驻波。开路匹配枝节在传输中,主要是抑制掉互联金带(3)引入的传输不连续性,保证信号能够完整的从微带线(1)导入到同轴绝缘子(4)中,阶梯型探针与矩形波导腔体的空间耦合,完成了同轴50Ω阻抗到矩形波导波阻抗的宽带匹配,实现了宽带转换传输。The realization goal of the present invention is to convert and transmit signals from a microstrip line to a waveguide. The specific implementation principle is, as shown in Figure 1, first introduce the signal into the coaxial insulator (4) through the microstrip line (1) and the open circuit matching stub (2) and the interconnection crimping gold strip (3), and then through the coaxial glass The insulator (4) is introduced into the stepped probe (5) welded on the lower end, and the probe (5) is placed in the waveguide cavity (8) where the magnetic field of the main mode TE10 mode of the rectangular waveguide is the strongest, generally the narrow side of the waveguide half of , as indicated by a/2 in Figure 2, and λ/4 from the bottom of the waveguide (corresponding to the wavelength of the transmission frequency), as indicated by e in Figure 2, at this time the reflection coefficient is about 1, that is, the signal passes through the bottom of the waveguide completely Reflected back to the position of the end face of the probe (5), the reflected wave and the incident wave are superimposed in the same phase at the probe, and the energy transmitted to the conversion point is strengthened, so as much as possible signal coupling into the waveguide cavity can be ensured, thereby obtaining a lower Insertion loss and better standing wave. The open-circuit matching stub is mainly to suppress the transmission discontinuity introduced by the interconnection gold strip (3) during transmission, so as to ensure that the signal can be completely imported from the microstrip line (1) to the coaxial insulator (4). The stepped probe The spatial coupling with the rectangular waveguide cavity completes the broadband matching of the coaxial 50Ω impedance to the rectangular waveguide wave impedance, realizing broadband conversion transmission.
本发明与现有技术相比的优点在于:The advantage of the present invention compared with prior art is:
(1)比起微带到波导的转换,以及微带-水平同轴-波导的转换的垂直转换传输方向,本发明采用垂直的同轴结构实现的微带到波导的转换,可以实现同向传输,在整星布局中可以更紧凑。(1) Compared with the conversion of microstrip to waveguide, and the vertical conversion transmission direction of the conversion of microstrip-horizontal coaxial-waveguide, the present invention adopts the vertical coaxial structure to realize the conversion of microstrip to waveguide, which can realize the same direction Transmission, can be more compact in the whole star layout.
(2)比起专利号:CN101752631A,《基于磁耦合原理的矩形波导与微带过渡转换电路》的专利所描述的转换电路,该设计即可以实现同向传输,又可以实现良好的气密性,对于采用裸芯片搭建的星载产品而言,更可靠。(2) Compared with the conversion circuit described in the patent No.: CN101752631A, "Rectangular waveguide and microstrip transition conversion circuit based on magnetic coupling principle", this design can realize the same direction transmission and good air tightness , which is more reliable for on-board products built with bare chips.
(3)采用金带互联软搭接工艺,与现有的采用锡焊搭建的转换电路相比,抗振性能更高,更适合星载使用。(3) Compared with the existing conversion circuit built by soldering, the gold-belt interconnection soft lapping technology is adopted, which has higher anti-vibration performance and is more suitable for spaceborne use.
(4)采用阶梯型探针和开路匹配枝节,扩展了使用带宽,降低了插入损耗,且探针内含焊接孔和通孔(导出焊接产生的气泡),如图2中A和B所标示,可以提高镀银质量和焊接质量,进一步提高产品的可靠性。(4) The use of stepped probes and open-circuit matching stubs expands the bandwidth used and reduces insertion loss, and the probes contain soldering holes and through holes (exporting bubbles generated by soldering), as marked by A and B in Figure 2 , can improve the quality of silver plating and soldering, and further improve the reliability of the product.
总之,本发明采用垂直的同轴结构实现了微带到矩形波导的过渡转换,具备同向传输、气密性,频带宽,插入损耗低,可靠性高的特点。In short, the present invention adopts a vertical coaxial structure to realize the transition from micro to rectangular waveguide, and has the characteristics of co-directional transmission, air tightness, wide frequency band, low insertion loss and high reliability.
附图说明Description of drawings
图1为本发明的电路示意图;Fig. 1 is a schematic circuit diagram of the present invention;
图2为本发明的电路局部细节图;Fig. 2 is a partial detail diagram of the circuit of the present invention;
图3为本发明一实施例中波导腔体立体结构示意图;FIG. 3 is a schematic diagram of a three-dimensional structure of a waveguide cavity in an embodiment of the present invention;
图4为本发明一实施例中含有一对背对背过渡转换电路的介质基片的示意图;4 is a schematic diagram of a dielectric substrate containing a pair of back-to-back transition conversion circuits in an embodiment of the present invention;
图5为本发明一实施例中介质基片与微带腔体组装后的俯视图;Fig. 5 is a top view after the dielectric substrate and the microstrip cavity are assembled in one embodiment of the present invention;
图6为本发明一实施例中微带腔体与波导腔体组装后侧面示意图;6 is a schematic side view of the assembly of the microstrip cavity and the waveguide cavity in an embodiment of the present invention;
图7为本发明一实施例中微带腔体与波导腔体组装后正面示意图;Fig. 7 is a schematic front view of the assembly of the microstrip cavity and the waveguide cavity in an embodiment of the present invention;
图8为本发明一实施例中在Ka频段的S21仿真结果图;Fig. 8 is the S21 simulation result figure in Ka frequency band in one embodiment of the present invention;
图9为本发明一实施例中在Ka频段的S11仿真结果图;Fig. 9 is the S11 simulation result figure in Ka frequency band in one embodiment of the present invention;
图10为本发明一实施例中样品在Ka频段的S21实测结果图;Fig. 10 is the S21 measured result figure of sample in Ka frequency band in one embodiment of the present invention;
图11为本发明一实施例中样品在Ka频段的S11实测结果示意图;Fig. 11 is a schematic diagram of the S11 measured results of samples in the Ka frequency band in an embodiment of the present invention;
具体实施方式detailed description
如图1所示,一种星载高频微带至波导宽带低插损垂直转换电路包括:微带线1、开路匹配枝节2、互联金带3、同轴玻璃绝缘子4、镀银铝质阶梯型探针5、介质基片6、圆柱形通腔7、波导腔体8和微带腔体9;其中微带线1与开路匹配枝节2两者均位于介质基片6上,并相互连接,介质基片6粘接于微带腔体9内表面上,同轴玻璃绝缘子4烧结于微带腔体9中,同轴绝缘子4引线上端头和下端头均露出腔体外,通过互联金带3将绝缘子4上端头与开路匹配枝节2压接,镀银铝质阶梯型探针5则焊接在绝缘子4下端头上,圆柱形通腔7开于波导腔体8上,用以伸入镀银铝质探针5。As shown in Figure 1, a spaceborne high-frequency microstrip to waveguide broadband low insertion loss vertical conversion circuit includes: microstrip line 1, open circuit matching stub 2, interconnection gold strip 3, coaxial glass insulator 4, silver-plated aluminum Stepped probe 5, dielectric substrate 6, cylindrical through cavity 7, waveguide cavity 8 and microstrip cavity 9; wherein the microstrip line 1 and the open-circuit matching stub 2 are both located on the dielectric substrate 6, and mutually connection, the dielectric substrate 6 is bonded on the inner surface of the microstrip cavity 9, the coaxial glass insulator 4 is sintered in the microstrip cavity 9, the upper end and the lower end of the lead of the coaxial insulator 4 are exposed outside the cavity, through the interconnection gold Tape 3 crimps the upper end of the insulator 4 with the open-circuit matching stub 2, the silver-plated aluminum stepped probe 5 is welded on the lower end of the insulator 4, and the cylindrical through cavity 7 is opened on the waveguide cavity 8 to extend into the Silver plated aluminum probe 5.
所述介质基片6粘接后的高度应与玻璃绝缘子4上端头的高度一致,具体如图1所示,这样可以保证互联金带3两个压接点玻璃绝缘子4上端头与开路匹配枝节2处在同一高度上,从而能够实现最短的压接长度。The height of the dielectric substrate 6 after bonding should be consistent with the height of the upper end of the glass insulator 4, as shown in FIG. are at the same height for the shortest crimp length possible.
所述互联金带3压接形状应为弧线,具体如图2所示,拱高应控制在0.05~0.1mm之间,两压接点之间的跨度应保证在0.3mm以内,保证较短的压接长度约0.4~0.5mm,互联金带3分为矩形和扇形两种,具体如图2中C与D所标示。The crimping shape of the interconnected gold belt 3 should be an arc, as shown in Figure 2. The arch height should be controlled between 0.05 and 0.1 mm, and the span between the two crimping points should be kept within 0.3 mm, which is relatively short. The crimping length is about 0.4-0.5 mm, and the interconnection gold ribbon 3 is divided into two types: rectangle and sector, as indicated by C and D in FIG. 2 .
所述介质基片6与玻璃绝缘子4端头的最近距离应控制0.1mm,具体如图2中d所标示,既能够保证互联金带3两压接点跨度在0.3mm以内,降低过长的互联金带3引入的传输不连续性,又能够保证绝缘子4上端头不与介质基片6背面的大面积地短接,造成失配。The shortest distance between the dielectric substrate 6 and the end of the glass insulator 4 should be controlled to be 0.1 mm, specifically as indicated by d in FIG. The transmission discontinuity introduced by the gold strip 3 can also ensure that the upper end of the insulator 4 is not short-circuited with a large area on the back of the dielectric substrate 6, causing a mismatch.
所述圆柱形通腔7的直径应大于探针5的直径,保证焊接在绝缘子的端头的探针5,能够深入波导腔体8中,圆柱形通腔7的中心距矩形波导底面的距离为λ/4对应传输频率的波长,如图2中e所标示。The diameter of the cylindrical through cavity 7 should be greater than the diameter of the probe 5 to ensure that the probe 5 welded on the end of the insulator can penetrate into the waveguide cavity 8, and the distance between the center of the cylindrical through cavity 7 and the bottom surface of the rectangular waveguide λ/4 corresponds to the wavelength of the transmission frequency, as indicated by e in Figure 2.
所焊接探针5距绝缘子4下端面距离为0.1mm,如图2中h所标示,保证探针5上端面尽可能的靠近的绝缘子4下端面,降低电传输不连续性,同时防止探针5与微带腔体9端面短接,造成失配,探针5中心位于波导腔体8矩形波导窄边的一半的位置,如图2中a/2所标示。The distance between the welded probe 5 and the lower end surface of the insulator 4 is 0.1 mm, as indicated by h in Figure 2, to ensure that the upper end surface of the probe 5 is as close as possible to the lower end surface of the insulator 4, reducing the discontinuity of electrical transmission and preventing the probe from 5 is short-circuited with the end face of the microstrip cavity 9, resulting in a mismatch. The center of the probe 5 is located at half of the narrow side of the rectangular waveguide of the waveguide cavity 8, as indicated by a/2 in FIG. 2 .
所述探针5为阶梯形状,内含端头引线焊接孔,以及通孔,如图2中A和B所标示,保证探针5在镀银的时候,银层能够顺畅流通孔内壁,且在焊接的时候气泡能够有效排除,从而提高焊接质量。The probe 5 is in the shape of a ladder and contains welding holes for terminal leads and through holes, as indicated by A and B in Figure 2, to ensure that the silver layer can smoothly flow through the inner wall of the hole when the probe 5 is silver-plated, and Bubbles can be effectively removed during welding, thereby improving welding quality.
所述微带腔体9与波导腔体8的传输方向为同向设计,如图1所示,信号在微带线1上的传输方向与在腔体腔体8矩形波导的传输方向一致。The transmission directions of the microstrip cavity 9 and the waveguide cavity 8 are designed in the same direction. As shown in FIG. 1 , the transmission direction of the signal on the microstrip line 1 is consistent with that of the rectangular waveguide in the cavity cavity 8 .
本发明工作过程:本发明为无源电路故不分静态和动态两种工作模式,其信号传输路径为,信号首先从微带腔体9开始传输,经过位于介质基片6上的微带线1与开路匹配枝节2后,由互联金带3将信号导入同轴玻璃绝缘子4的上端头,经绝缘子4同轴部分传输到已伸入圆柱形通孔7中的镀银阶梯型铝质探针5上,再由探针5耦合进入波导腔体8中,最后经波导口输出。The working process of the present invention: the present invention is a passive circuit, so it does not distinguish between static and dynamic operating modes. Its signal transmission path is that the signal is first transmitted from the microstrip cavity 9, and passes through the microstrip line positioned on the dielectric substrate 6. After 1 is matched with the branch 2 of the open circuit, the signal is introduced into the upper end of the coaxial glass insulator 4 by the interconnection gold strip 3, and then transmitted to the silver-plated stepped aluminum probe inserted into the cylindrical through hole 7 through the coaxial part of the insulator 4. On the needle 5, it is coupled into the waveguide cavity 8 by the probe 5, and finally output through the waveguide port.
在信号转换传输过程中,开路匹配枝节2综合掉互联金带3引入的不连续性,实现微带线1和绝缘子4同轴线间的50Ω的连续传输,阶梯型探针5与波导腔8矩形波导的耦合,实现了绝缘子4同轴线50Ω到波阻抗的阶梯变换,从而保证微波信号的匹配传输。In the process of signal conversion and transmission, the open-circuit matching stub 2 comprehensively removes the discontinuity introduced by the interconnection gold strip 3, and realizes the continuous transmission of 50Ω between the coaxial lines of the microstrip line 1 and the insulator 4, and the stepped probe 5 and the waveguide cavity 8 The coupling of the rectangular waveguide realizes the step transformation from the 50Ω coaxial line of the insulator 4 to the wave impedance, thereby ensuring the matching transmission of the microwave signal.
如图1所示,本转换结构含粘接了介质基片6的微带腔体9,位于介质基片上6上的微带线1,开路匹配枝节端头2,微带到同轴线端头间的互联金带3,烧结在结构件中的同轴玻璃体绝缘子4,以及穿过波导腔体8上的圆柱形通孔7,并焊接在绝缘子4下端头的阶梯型铝质镀银探针5。As shown in Figure 1, the conversion structure includes a microstrip cavity 9 bonded to a dielectric substrate 6, a microstrip line 1 located on the dielectric substrate 6, an open circuit matching stub end 2, and a microstrip coaxial end The interconnected gold strip 3 between the heads, the coaxial glass insulator 4 sintered in the structural part, and the stepped aluminum silver-plated probe that passes through the cylindrical through hole 7 on the waveguide cavity 8 and is welded to the lower end of the insulator 4 pin 5.
实施例Example
为测试方便,首先将本发明所述的两个完全相同转换电路对称的设置于同一介质基片6上,并将两个转换电路中的微带线1连接,使两个转换电路连通如图4所示,然后准备烧结了两个绝缘子的微带腔体,以及内含两圆柱通腔(用于探针深入)和两矩形波导的波导腔体如图3所示(腔体所有表面镀银),将图4所示的介质基板用导电胶粘接到微带腔体上,保证基板距两个绝缘子端头的距离均为0.1mm,基片安装高度与绝缘子端口平齐,用金带将开路匹配枝节与绝缘子端头互联,金带互联路径取最短,拱高介于0.05mm到0.1mm之间,跨度在0.3mm以内。绝缘子端头下端焊接阶梯型探针,保证探针端面与绝缘子端面保持在0.1mm的距离。焊接完毕后将微带腔体装配到波导腔体中,用螺钉将两个腔体紧固,如图6与图7所示,对外为两个波导接口,易于测试。For the convenience of testing, at first the two identical conversion circuits of the present invention are symmetrically arranged on the same dielectric substrate 6, and the microstrip lines 1 in the two conversion circuits are connected so that the two conversion circuits are connected as shown in the figure 4, and then prepare the microstrip cavity with two insulators sintered, and the waveguide cavity containing two cylindrical through cavities (for probe penetration) and two rectangular waveguides as shown in Fig. 3 (all surfaces of the cavity are plated silver), bond the dielectric substrate shown in Figure 4 to the microstrip cavity with conductive adhesive, ensure that the distance between the substrate and the two The belt interconnects the open-circuit matching branch and the insulator terminal. The gold belt interconnection path is the shortest, the arch height is between 0.05mm and 0.1mm, and the span is within 0.3mm. Weld the stepped probe at the lower end of the insulator to ensure that the distance between the end face of the probe and the end face of the insulator is kept at 0.1mm. After welding, assemble the microstrip cavity into the waveguide cavity, and fasten the two cavities with screws, as shown in Figure 6 and Figure 7. There are two waveguide interfaces externally, which are easy to test.
下面根据上述理论,先在计算机上进行仿真优化设计,然后根据优化设计加工实物样品,最后对样品进行测试。Next, according to the above theory, the simulation optimization design is carried out on the computer first, then the physical samples are processed according to the optimization design, and finally the samples are tested.
仿真计算的软件使用HFSS14微波仿真软件,介质基板采用A493陶瓷片,介电常数9.9,厚度0.38mm,镀金厚度2~3um,微带线宽度采用标准50Ω线宽,0.38mm,开路枝节位于微带线端口,宽度≥0.38mm,金带拱高设为0.05~0.1mm之间,跨度0.25~0.3mm之间,矩形波导采用BJ260尺寸。The simulation calculation software uses HFSS14 microwave simulation software. The dielectric substrate is made of A493 ceramic sheet with a dielectric constant of 9.9 and a thickness of 0.38mm. The thickness of the gold plating is 2-3um. Line port, width ≥ 0.38mm, gold ribbon arch height set between 0.05-0.1mm, span between 0.25-0.3mm, rectangular waveguide adopts BJ260 size.
在18~34GHz频率范围内对上述事例进行了模拟仿真,模拟仿真结果如图8、图9所示,22GHz~31GHz回波损耗优于-20dB,插入损耗优于0.1dB,根据该优化结果所对应的设计尺寸加工了相应的样件,采用AgilentE8363C对样件进行了测试,测试结果如图10所示,可以看到测试结果与仿真结果基本相同,插入损耗1.1dB,扣除测试波同转换0.6dB的损耗,则单边转换电路插入损耗优于0.3dB,如图11所示,回波损耗在21.5~28GHz优于-15dB。由此证明本发明不仅可行,而且实施效果已经达到甚至超过现有技术。因此本发明不仅是微波毫米波频段矩形波导与微带线之间过渡转换的工程设计中一种全新的选择,而且结构紧凑,性能可靠,可同向传输,可气密,带宽宽,插损低,具有很高的利用价值。The above case was simulated in the frequency range of 18-34GHz. The simulation results are shown in Figure 8 and Figure 9. The return loss of 22GHz-31GHz is better than -20dB, and the insertion loss is better than 0.1dB. According to the optimization results, the The corresponding design dimensions were processed for the corresponding samples, and the Agilent E8363C was used to test the samples. The test results are shown in Figure 10. It can be seen that the test results are basically the same as the simulation results. The insertion loss is 1.1dB, and the test wave is deducted. dB loss, the insertion loss of the unilateral conversion circuit is better than 0.3dB, as shown in Figure 11, the return loss is better than -15dB at 21.5-28GHz. This proves that the present invention is not only feasible, but also has achieved or even surpassed the prior art in implementation effect. Therefore, the present invention is not only a brand-new choice in the engineering design of the transition conversion between the rectangular waveguide and the microstrip line in the microwave and millimeter wave bands, but also has compact structure, reliable performance, can be transmitted in the same direction, can be airtight, has wide bandwidth and low insertion loss. Low, with high utilization value.
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