CN103579164A - Connecting structure body - Google Patents
Connecting structure body Download PDFInfo
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- CN103579164A CN103579164A CN201310347578.XA CN201310347578A CN103579164A CN 103579164 A CN103579164 A CN 103579164A CN 201310347578 A CN201310347578 A CN 201310347578A CN 103579164 A CN103579164 A CN 103579164A
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- salient pole
- substrate
- syndeton body
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- passivating film
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- 239000000463 material Substances 0.000 claims description 6
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- 238000009434 installation Methods 0.000 description 7
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- 238000009740 moulding (composite fabrication) Methods 0.000 description 6
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- 229910052737 gold Inorganic materials 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 238000007772 electroless plating Methods 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- -1 pottery Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 230000008719 thickening Effects 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention provides a connecting structure body. The connecting structure body is characterized in that the connecting structure body can be formed by connecting protruding block electrodes of a chip-type electronic part and electrodes of a circuit board by solid of anisotropy conductive bonding agent. The chip-type electronic part is provided with a substrate, protruding block electrodes arranged on one surface side of the substrate and passive films arranged along the arrangement direction of the protruding block electrodes on the surface side of the substrate. The thickness Hp of the passive films and the thickness Hb of the protruding block electrodes satisfy Hb>Hp>=(1/3)Hb.
Description
Technical field
The present invention relates to syndeton body.
Background technology
Along with miniaturization and the slimming of electronic equipment, require to establish the high-density installation technology of chip-type electronic component.As former chip mounting method, there is the method for for example using lead frame.This former method is the chip on lead frame is connected on circuit substrate and carries out resin-sealed method with metal wire, but is guaranteeing aspect the relation in space of metal wire, to be difficult to improve packing density.
Therefore, in recent years, as technology that can high-density installation chip-type electronic component, flip-chip is installed and is received publicity.The method is the method for using anisotropic conductive adhesive etc. that the electrode of the salient pole of chip side and circuit substrate side is connected.For example, in the method for recording at patent documentation 1, use anisotropic conductive adhesive by salient pole when electrode on circuit substrate is connected, in advance to the additional ultrasonic wave of connecting portion, make metal molten and guaranteed connectivity.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2010-251789
Summary of the invention
But, in flip-chip installation method as described above, sometimes comprise following operation: between the salient pole of chip side and the electrode of circuit substrate side, configure after anisotropic conductive adhesive, anisotropic conductive adhesive is applied to light or heat is cured.In this operation, can produce the cure shrinkage of anisotropic conductive adhesive, but different with the thickness of anisotropic conductive adhesive in region that does not form salient pole due to the region that has formed salient pole in chip, therefore, cure shrinkage produces difference sometimes.Therefore, likely close on the region that cure shrinkage is large, do not form the region of salient pole, the substrate of chip produces warpage.It is remarkable especially that such problem easily becomes in the situation that substrate is thin, and when substrate produces warpage, chip-type electronic component and circuit substrate generation bad connection become problem.
The present invention is the invention completing in order to address the above problem, object be to provide the substrate warp when suppressing flip-chip and install and can realize good connection chip-type electronic component, with and syndeton body.
Syndeton body involved in the present invention is characterised in that, the syndeton body that its solidfied material that is the electrode that has of the salient pole that has of chip-type electronic component and circuit substrate by anisotropic conductive adhesive is formed by connecting, chip-type electronic component has substrate, be arranged in the salient pole of substrate one side side and the passivating film forming along the orientation of salient pole in the above-mentioned one side side of substrate, and the thickness Hp of passivating film and the thickness Hb of salient pole meet Hb>Hp≤(1/3) Hb.
In the chip-type electronic component of this syndeton body, in the region of arranging lug electrode not, be formed with the passivating film of the thickness that meets above-mentioned relation.While chip-type electronic component being carried out to flip-chip installation by this passivating film, can make to be arranged with the region of salient pole and not the volume differences of the anisotropic conductive adhesive between the region of arranging lug electrode reduce, can suppress the substrate warp that the difference by the cure shrinkage of anisotropic conductive adhesive causes.In addition, also can suppress when mounted passivating film because foreign matter damages.Thus, can realize good connection.
In addition, passivating film preferably extends between the row of salient pole.In this case, can further suppress the substrate warp that the difference by the cure shrinkage of anisotropic conductive adhesive causes.
In addition, more than the thickness of passivating film is preferably 3 μ m.In this case, reduce in the space that foreign matter enters, and can prevent the invasion of foreign matter.Therefore, the passivating film that can suppress to be caused by foreign matter damages, and can maintain passivating film as the function of diaphragm.
In addition, chip-type electronic component does not preferably comprise that the thickness of salient pole is below 0.3mm.In slim chip-type electronic component below 0.3mm, easily significantly there is the substrate warp that the cure shrinkage by anisotropic conductive adhesive causes.Therefore by making the thickness of passivating film and the thickness of salient pole, be, above-mentioned relation, even if also can effectively suppress the warpage of substrate in slim chip-type electronic component.
In addition, the syndeton body the present invention relates to is characterised in that, across the solidfied material of anisotropic conductive adhesive, the salient pole of said chip type electronic unit is connected in to the electrode of circuit substrate.
In this syndeton body, with regard to chip-type electronic component, the thickness of passivating film and the thickness of salient pole meet above-mentioned relation.Therefore, in flip-chip installation chip-type electronic component, the region of salient pole and volume poor of the anisotropic conductive adhesive between the region of arranging lug electrode not can be reduced to be arranged with, the warpage of the substrate that the difference of the cure shrinkage of anisotropic conductive adhesive causes can be suppressed.In addition, also can suppress foreign matter when mounted damages passivating film.Thus, can realize good connection.
According to the present invention, the substrate warp while installing by suppressing flip-chip can be realized good connection.
Accompanying drawing explanation
Fig. 1 means the schematic plan view of the chip-type electronic component of one embodiment of the present invention.
Fig. 2 is the II-II line constructed profile in Fig. 1.
Fig. 3 means the constructed profile of the syndeton body of one embodiment of the present invention.
Fig. 4 means the constructed profile of the syndeton body of comparative example.
Symbol description
1: chip-type electronic component; 2: substrate; 4,5: salient pole; 6: passivating film; 10: the solidfied material of anisotropic conductive adhesive; 20: circuit substrate; 22: electrode; 30: syndeton body.
Embodiment
Below, with reference to accompanying drawing on one side the preferred implementation of involved in the present invention chip-type electronic component and syndeton body be elaborated on one side.
Fig. 1 means the schematic plan view of the chip-type electronic component 1 of one embodiment of the present invention.In addition, Fig. 2 is the II-II line constructed profile in Fig. 1.As depicted in figs. 1 and 2, chip-type electronic component 1 has substrate 2, salient pole 4,5 and passivating film 6.This chip-type electronic component 1 is IC chip or circuit substrate applicable in such as electronic equipments such as touch-screens, is connected and forms syndeton body 30 with circuit substrate 20 described later.
In the situation that substrate 2 is circuit substrate, splicing ear can form pattern with distribution conductor simultaneously, also can be by not needing partially-etched removing and forming in the metal formings such as Copper Foil.In addition, can also on insulated substrate, the shape according to splicing ear form by electroless plating.On the other hand, in the situation that substrate 2 is semiconductor substrate, splicing ear for example consists of aluminium.In this case, can use nickel, gold, platinum etc. to carry out noble metal plating on the surface of splicing ear.
As the formation method of salient pole 4,5, can use the common methods such as etching, plating.For example the conductor part the forming part except salient pole 4,5 can be etched partially and forms jut at thickness direction, further in the circuit part of the conductor part of residual attenuation, other parts are removed in etching, thereby form salient pole 4,5.In addition, also can on the installed surface 2a of substrate 2, form after circuit, by utilizing plating only to make the method for the position thickening of splicing ear form salient pole 4,5.
The thickness Hb of salient pole 4,5 is not particularly limited, for example, be 9～18 μ m.In addition, the thickness Hb of salient pole 4,5 can adjust in above-mentioned bump forming method.This thickness Hb can be used existing determining film thickness device to measure.In addition, can outside the region that is arranged with salient pole 4,5, further form illusory projection (not shown).If form illusory projection at above-mentioned zone, easily at the circuit substrate 20 with respect to chip-type electronic component 1 is installed, making the posture of chip-type electronic component 1 is to carry out flip-chip installation under parallel state.Thus, can improve the operability of installation.
On the other hand, passivating film 6 is to prevent that moisture, oxygen etc. are from the diaphragm of outside invasion, uses such as silicon nitride, silica etc., by known masking methods such as CVD method, vapour deposition method, sputtering methods, forms.In this implementation method, passivating film 6 forms elongate between the salient pole 4,5 of substrate 2, but passivating film 6 is not limited to elongated shape, also can make the passivating film of rectangle be dispersed between salient pole 4,5.In addition, according to the arrangement position of salient pole 4,5, passivating film 6 also can not be configured between salient pole 4,5, and is configured in the region of comparing more in the outer part with salient pole 4,5.
The thickness Hp of this passivating film 6 meets Hb>Hp≤(1/3) Hb with respect to the thickness Hb of salient pole 4,5.In addition, the thickness Hp of passivating film 6 is for example more than 3 μ m when Hb is 9 μ m, at Hb, is that 12 μ m are more than 4 μ m when above, is more than 6 μ m when Hb is 18 μ m.Further, in the relation with substrate 2, the thickness Hp of passivating film 6 is that mode below 0.3mm determines according to the thickness of the chip-type electronic component 1 thickness except salient pole 4,5.The mode adding up to below 0.3mm according to the thickness of the thickness of passivating film 6 and substrate 2 determines.In this case, the thickness of substrate 2 is set according to the mode that is less than 0.3mm.In addition, the thickness Hp of passivating film 6 can adjust in above-mentioned passivating film formation method.This thickness Hp can be used existing determining film thickness device to measure.
Then, to having used the syndeton body of above-mentioned chip-type electronic component 1 to describe.
Fig. 3 means the constructed profile of the syndeton body of one embodiment of the present invention.As shown in the drawing, syndeton body 30 is that the solidfied material 10 by anisotropic conductive adhesive carries out by chip-type electronic component 1 and circuit substrate 20 structure that flip-chip connection forms.
The position of the salient pole 4,5 that electrode 22 has with chip-type electronic component 1 is corresponding and form on glass substrate 24.As electrode 22, for example, can use the transparency electrode being formed by tin indium oxide (ITO).As transparency electrode, also can use indium zinc oxide (IZO) etc.As the formation method of transparency electrode, can use the known methods such as sputtering method, electronic beam method.In addition, as electrode 22, can on glass substrate 24, form the electrode being formed by aluminium, chromium, silver etc.
Anisotropic conductive adhesive contains by the resin combination 12 of heat or photocuring and electroconductive particle 14.As the resin that forms resin combination 12, for example, can use mixed system, the light-cured resin of thermoplastic resin, thermosetting resin, thermoplastic resin and thermosetting resin.As thermoplastic resin, there are styrene resin system, mylar system, as thermosetting resin, known epoxy resin, silicones system.In the situation that using thermoplastic resin, thermosetting resin, conventionally need heating pressurization.The in the situation that of thermoplastic resin, be in order to make resin flows, obtain with by the closing force of convered structure, the in the situation that of thermosetting resin, be in order further to carry out the curing reaction of resin in addition.In addition, in the situation that using light-cured resin, useful to the situation that requires to connect at low temperatures.Therefore light-cured resin is not owing to needing heating when curing, can suppress to result from the warpage of chip-type electronic component 1 and the chip-type electronic component 1 of the difference of the thermal coefficient of expansion of glass substrate 24, thereby preferably.
As electroconductive particle 14, such as metallic, the carbon particle that can use Au, Ag, Ni, Cu, Pd, scolder etc.In addition, the particle that electroconductive particle 14 also can form for the surface with transition metal-types such as precious metal coating Ni, Cu such as Au, Pd.In addition, use by the methods such as surface by non-conductive particles such as conductive material coating glass, pottery, plastics in the situation that non-conductive particles surface forms conductting layer and further uses precious metal to form outermost particle, hot molten metal particle, owing to pressurizeing and thering is morphotropism by heating, therefore while connecting, with the contact area increase of electrode, can improve reliability.
At this moment, in chip-type electronic component 1, as mentioned above, in the installed surface 2a of substrate 2, in the region of arranging lug electrode 4,5 not, be formed with the passivating film 6 that meets Hb>Hp≤(1/3) Hb thickness.In addition, the thickness of passivating film 6 is more than 3 μ m.Therefore, in syndeton body 30, can suppress to be arranged with the region of salient pole 4,5 and the volume differences of the anisotropic conductive adhesive between the region of arranging lug electrode 4,5 not, the warpage of the substrate 2 being caused by the difference of the cure shrinkage of anisotropic conductive adhesive in the time of can suppressing to carry out flip-chip and install.Owing to can suppressing the warpage of substrate 2, therefore can avoid the salient pole 4,5 of arranging along the long limit of substrate 2 to peel off from electrode 22, can maintain good connection status.In addition, about connection status, for example, can evaluate by the contact resistance of measuring between salient pole 4,5 and electrode 22.
In addition, in chip-type electronic component 1, because foreign matter is difficult to enter 4,5 of salient poles, therefore, in the time of also can suppressing to install, passivating film 6 be because foreign matter damages.Thus, can more positively realize good connection.Even this slim chip-type electronic component 1, by the passivating film 6 that meets above-mentioned relation thickness is set between salient pole 4,5, also can suppress the warpage of substrate 2 fully.
Fig. 4 means the constructed profile of the syndeton body of comparative example.As shown in the drawing, the syndeton body 100 of comparative example does not form passivating film 6(or forms the passivating film of Hp < (1/3) Hb between salient pole 4,5) aspect different from the syndeton body 30 of present embodiment.This syndeton body 100 is compared with syndeton body 30, be arranged with the region of salient pole 4,5 and not in the region of arranging lug electrode 4,5 volume differences of anisotropic conductive adhesive become large.
Therefore, in syndeton body 100, when flip-chip is installed, the cure shrinkage of the anisotropic conductive adhesive in the region of arranging lug electrode 4,5 is not compared with the region that is arranged with salient pole 4,5 and is become large, for example, according to the mode towards circuit substrate 20 side projections, produce the warpage of substrate 20.Therefore, likely salient pole 4,5 and electrode 22 deviate from and produce bad connection.Therefore, form as in the present embodiment the passivating film 6 that meets Hb>Hp≤(1/3) Hb thickness, it is useful that the viewpoint of the bad connection being caused by substrate warp from inhibition is considered.
Claims (17)
1. a syndeton body, is characterized in that, the syndeton body that its solidfied material that is the electrode that has of the salient pole that has of chip-type electronic component and circuit substrate by anisotropic conductive adhesive is formed by connecting,
Described chip-type electronic component has substrate, be arranged in the described salient pole of described substrate one side side and the passivating film forming along the orientation of described salient pole in the described one side side of described substrate,
The thickness Hp of described passivating film and the thickness Hb of described salient pole meet Hb>Hp≤(1/3) Hb.
2. syndeton body according to claim 1, is characterized in that, described passivating film does not form in arranging the region of described salient pole.
3. syndeton body according to claim 1 and 2, is characterized in that, described passivating film extends between the row of described salient pole.
4. syndeton body according to claim 1 and 2, is characterized in that, described passivating film scatters between the row of described salient pole.
5. syndeton body according to claim 1 and 2, is characterized in that, described passivating film is configured in and compares a more outer side with the row of described salient pole.
6. according to the syndeton body described in any one in claim 1～5, it is characterized in that, described passivating film be shaped as elongated shape.
7. according to the syndeton body described in any one in claim 1～6, it is characterized in that, described passivating film forms flat rectangular shape along the orientation of described salient pole.
8. according to the syndeton body described in any one in claim 1～7, it is characterized in that, the thickness Hp of described passivating film is more than 3 μ m.
9. according to the syndeton body described in any one in claim 1～8, it is characterized in that the word shape that described salient pole is arranged in along described substrate one side's long limit.
10. according to the syndeton body described in any one in claim 1～9, it is characterized in that, the thickness Hb of described salient pole is 9～18 μ m.
11. according to the syndeton body described in any one in claim 1～10, it is characterized in that, described chip-type electronic component further has illusory projection being arranged with outside the region of described salient pole.
12. according to the syndeton body described in any one in claim 1～11, it is characterized in that, the described substrate that described chip-type electronic component has is the semiconductor substrate of rectangular shape, square shape or trapezoidal shape.
13. according to the syndeton body described in any one in claim 1～12, it is characterized in that, the thickness of the described substrate that described chip-type electronic component has is 0.1～1.1mm.
14. according to the syndeton body described in any one in claim 1～13, it is characterized in that, the thickness that does not comprise described salient pole of described chip-type electronic component is below 0.3mm.
15. according to the syndeton body described in any one in claim 1～14, it is characterized in that, the described electrode that described circuit substrate has is transparency electrode.
16. according to the syndeton body described in any one in claim 1～15, it is characterized in that, described circuit substrate is the surperficial glass substrate with electrode.
17. syndeton bodies according to claim 16, is characterized in that, described glass substrate be shaped as rectangle, square or trapezoidal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012177235 | 2012-08-09 | ||
| JP2012-177235 | 2012-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103579164A true CN103579164A (en) | 2014-02-12 |
Family
ID=50050614
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320487884.9U Expired - Fee Related CN203481220U (en) | 2012-08-09 | 2013-08-09 | Connecting structure |
| CN201320487885.3U Expired - Fee Related CN203481215U (en) | 2012-08-09 | 2013-08-09 | Chip-type electronic part |
| CN201310347578.XA Pending CN103579164A (en) | 2012-08-09 | 2013-08-09 | Connecting structure body |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320487884.9U Expired - Fee Related CN203481220U (en) | 2012-08-09 | 2013-08-09 | Connecting structure |
| CN201320487885.3U Expired - Fee Related CN203481215U (en) | 2012-08-09 | 2013-08-09 | Chip-type electronic part |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2014053597A (en) |
| KR (1) | KR20140020767A (en) |
| CN (3) | CN203481220U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105304507A (en) * | 2015-11-06 | 2016-02-03 | 南通富士通微电子股份有限公司 | Fan-out wafer level packaging method |
| CN105390471A (en) * | 2015-11-06 | 2016-03-09 | 南通富士通微电子股份有限公司 | Fan-out wafer level packaging structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014053597A (en) * | 2012-08-09 | 2014-03-20 | Hitachi Chemical Co Ltd | Chip type electronic component and connection structure |
| TWI806112B (en) * | 2020-07-31 | 2023-06-21 | 矽創電子股份有限公司 | Flow guiding structure of chip |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2014053597A (en) | 2014-03-20 |
| CN203481220U (en) | 2014-03-12 |
| CN203481215U (en) | 2014-03-12 |
| KR20140020767A (en) | 2014-02-19 |
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