CN103569951A - Method for preparing amorphous silicon micro-electromechanical systems (MEMS) suspended film structure - Google Patents
Method for preparing amorphous silicon micro-electromechanical systems (MEMS) suspended film structure Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 239000003292 glue Substances 0.000 claims abstract description 49
- 239000004642 Polyimide Substances 0.000 claims abstract description 28
- 229920001721 polyimide Polymers 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000012528 membrane Substances 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910000889 permalloy Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000009713 electroplating Methods 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000011368 organic material Substances 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 238000000059 patterning Methods 0.000 abstract 2
- 238000000206 photolithography Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 42
- 238000005516 engineering process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000007747 plating Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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Abstract
本发明公开了一种制备非硅MEMS悬空膜结构的方法，该方法包括以下具体步骤：衬底的准备；溅射Ti/Cu电镀种子层；涂覆聚酰亚胺、烘胶、光刻；甩正胶、烘胶图形化；电镀桥墩；溅射Ti/Cu电镀种子层；甩胶、烘胶、光刻图形化；电镀悬空膜结构；湿法去除正胶、干法去除聚酰亚胺。本发明的优点是有机材料作牺牲层减小应力，合成牺牲层免了单独使用正胶厚度受限且易出现龟裂的缺点、避免了单独使用聚酰亚胺刻蚀时间过长、悬空结构易变形的缺点，有利于制作面积较大的悬空膜结构。
The invention discloses a method for preparing a non-silicon MEMS suspended film structure. The method includes the following specific steps: preparation of a substrate; sputtering Ti/Cu electroplating seed layer; coating polyimide, baking glue, and photolithography; Sputtering positive glue, baking glue patterning; electroplating bridge piers; sputtering Ti/Cu electroplating seed layer; throwing glue, baking glue, photolithography patterning; electroplating suspended film structure; wet removal of positive glue, dry removal of polyimide . The advantage of the present invention is that the organic material is used as the sacrificial layer to reduce the stress, and the synthesis of the sacrificial layer avoids the disadvantages of limited thickness and easy occurrence of cracks when the positive resist is used alone, and avoids the excessively long etching time and the suspended structure of the polyimide alone. The disadvantage of being easy to deform is conducive to the production of a larger suspended membrane structure.
Description
Technical field
The invention belongs to the preparing technical field of microelectromechanical systems, relate to a kind of method of preparing the unsettled membrane structure of non-silicon MEMS, MEMS is the initial abbreviation of micro-electro-mechanical systems, and Chinese translation is microelectromechanical systems.
Background technology
The MEMS product that to be microelectric technique be combined with the technology such as machinery and optics, is expanding and extending of IC technology, has realized the integrated manufacture of multiple non-silicon material, is the new breakthrough that microelectric technique is applied.MEMS technology is a kind of emerging technology of typical multidisciplinary intersection, almost relate to all spectra of nature and engineering science, as electronic technology, mechanical technique, physics, chemistry, biomedicine, material science etc., in the many-side of economic society, all there is application prospect as fields such as national defence, Aero-Space, medical treatment, information communication, automobiles, thereby extremely people's concern, and obtained development rapidly.
The microelectronics system that MEMS is comprised of 3-D micro mechanical structure in essence.In micro-processing of MEMS, in most cases need on the substrate of carrying MEMS, form movable structure, to realize Mechanical Moving, as micro-valve, micro motor, micro-gyro, micro-acceleration gauge, micro-machinery switch etc.; For some radio frequencies (RF:radio frequency) MEMS device, as microstrip line, micro-inductance, also need to form hanging structure, to reduce the substrate loss and the high frequency performance that improves radio circuit of device system.These all need to be realized by means of sacrifice layer, utilize the difference of different materials corrosion rate in same corrosive liquid or gas, optionally the sacrificial layer material between structure graph and substrate is etched away, carries out the release of structure, form the hanging structure film on cavity.Sacrificial layer technology is a key technology in MEMS manufacturing technology, is an important difference of MEMS micro fabrication and traditional IC technique, has now become a main focus in MEMS technical research field.In the evolution of MEMS non-silicon material micro fabrication, once adopted different materials as metal material Ti, Al, Cu, Cr and nonmetallic materials phosphorosilicate glass, SiO
2deng making sacrificial layer material.But, use above sacrificial layer material to have following shortcoming:
(1) the covering cost of sacrificial layer material is high, time-consuming.
(2) dissolving of sacrificial layer material is very difficult, conventionally needs to use strong acid, thereby has produced for the manufacture of the compatibility issue between numerous material of MEMS.
(3) described sacrificial layer material can not be directly by graphically, need additional lithography step, just can obtain required structure graph, manufacturing process is complicated.
With respect to inorganic material, it is just fairly simple that organic material is made sacrifice layer method.Such as with photoresist, both be easy to apply, and be easy to again use acetone selective dissolution, and harmless to structure and substrate, but when photoresist Thickness Ratio is larger, easily there is crack performance, when particularly lamination is used, easily occur that levels is dissolved each other to cause interlayer Seed Layer to damage.Wet method is also prone to adhesion in discharging in addition.Also useful polyimides is done sacrifice layer dry release, but dispose procedure time used is long, can cause free standing structure film structural failure.
Summary of the invention
Deficiency for above-mentioned sacrificial layer technology, the object of the invention is to release a kind of method of jointly doing with photoresist the non-silicon MEMS of sacrificial layers fabrication hanging structure with polyimides, the method does not have the shortcoming in background technology, by adopting this synthetic sacrifice layer, form MEMS hanging structure, can simplify the manufacturing process of the unsettled membrane structure of non-silicon MEMS.
By a method for the synthetic sacrificial layers fabrication MEMS hanging structure of polyimides/photoresist, the method comprises following concrete steps:
The first step is made substrate 1 with the substrate of sheet glass, silicon chip, alumina ceramic plate or other surfacing, by conventional method, cleans and dry substrate 1;
Second step is sputtered with Ti on the substrate 1 of processing through the first step, make adhesion layer, sputter Cu on adhesion layer again, make Seed Layer, adhesion layer and Seed Layer are combined into the first adhesion-Seed Layer 2, the thickness of the first adhesion-Seed Layer 2 is 100nm, and wherein the thickness of adhesion layer and Seed Layer is respectively 30nm and 70nm;
The 3rd step polyimides and absolute alcohol carry out the mixed diluting that volume ratio is 10:2 proportioning, then coating polyimide 3 in the first adhesion-Seed Layer 2, thickness 10 ~ 100 μ m, baking scheme: 40 minutes, 110 ℃ bakings of 30 minutes, 100 ℃ bakings of 20 minutes, 90 ℃ bakings of 80 ℃ of bakings 50 minutes, then mask plate patterns exposure is 40 ~ 180 seconds;
The 4th step applies positive glue 4 at polyimides 3, thickness 3 μ m, and drying glue 90 ℃, 40 minutes, then mask plate patterns exposure is 30 seconds, develops graphical, and remaining polyimides 3 and positive glue 4 serve as sacrifice layer;
The 5th step is electroplated bridge pier 5, and the metal of plating is permalloy, nickel, copper, gold or hard magnetic material, and the thickness of bridge pier 5 is identical with the adduction height of polyimides 3 and positive glue 4;
The 6th step is sputtered with Ti on positive glue 4 and bridge pier 5, makes adhesion layer, then on adhesion layer sputter Cu, make Seed Layer, the thickness that adhesion layer and Seed Layer are combined into the second adhesion-Seed Layer the 2 ', the second adhesion-Seed Layer 2 ' is 120nm, and wherein the thickness of adhesion layer and Seed Layer is respectively 30nm and 90nm;
The 7th step is got rid of the second positive glue 4 ' in the second adhesion-Seed Layer 2 ', the thickness of the second positive glue 4 ' is 5 ~ 35 μ m, form synthetic sacrifice layer+adhesion-Seed Layer+photoresist structure, drying glue, after drying glue, at the structure graph of the second positive glue 4 ' upper unsettled film 6 of photoetching, the technological parameter of described drying glue is as shown in table 1;
The drying glue technological parameter of table 1 the second positive glue 4 '
On the structure graph of the unsettled film 6 that the 8th step obtains in the 7th step, electroplate unsettled film 6, have radius 2 ~ 30 μ m to increase pit on unsettled film, the metal of plating is permalloy, nickel, copper, gold or hard magnetic material, and the thickness of unsettled film 6 is 3 ~ 30 μ m;
The 9th step wet etching removes positive glue: adopt the KOH solution of mass fraction 3% to soak to dissolve and remove 4 layers, 4 ' layer, the second positive glue and positive glue, after washed with de-ionized water flood is done, dry etching polyimides 3, obtains the movable unsettled membrane structure of non-silicon MEMS of freedom of release.
So far, completing hanging structure discharges: film 6 is suspended from the top of substrate 1.
The present invention has following outstanding effect:
1. sacrifice layer is synthetic by polyimides and positive two kinds of organic materials of glue, easy film forming, the internal stress that does not have the general sacrifice layer obtaining by deposit conventionally to have;
2. synthetic sacrifice layer has avoided the positive glue thickness of independent use limited and be prone to the shortcoming of be full of cracks;
3. synthetic sacrifice layer has avoided that independent use polyimides etch period is long, the yielding shortcoming of hanging structure;
4. be conducive to make the unsettled membrane structure that area is larger.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the substrate 1 after cleaning, drying;
Fig. 2 is the schematic diagram that on the substrate of Fig. 1, sputter has the first adhesion-Seed Layer 2;
Fig. 3 gets rid of the schematic diagram of polyimides 3 on the substrate of Fig. 2;
Fig. 4 be on the substrate of Fig. 3, get rid of positive glue 4 and graphical after schematic diagram;
Fig. 5 electroplates the schematic diagram of bridge pier 5 on the substrate of Fig. 4;
Fig. 6 is the schematic diagram that on the substrate of Fig. 5, sputter has the first adhesion-Seed Layer 2 ';
Fig. 7 be on the substrate of Fig. 6, get rid of the second positive glue 4 ' and graphical after schematic diagram;
Fig. 8 is the schematic diagram that the substrate of Fig. 7 is electroplated unsettled film 6;
Fig. 9 is the schematic diagram after the hanging structure on the substrate of Fig. 8 discharges; Wherein, with the film 6 that increases pit, be suspended from the top of substrate 1.
The specific embodiment
Now by embodiment and accompanying drawing, describe technical scheme of the present invention in detail.All embodiment all operate according to the operating procedure of method described in above summary of the invention.Each embodiment is only enumerated crucial technical data separately.
The preparation of the unsettled membrane structure of non-silicon MEMS:
The first step is made substrate 1 with the substrate of sheet glass, silicon chip, alumina ceramic plate or other surfacing, by conventional method, cleans and dry substrate 1;
Second step is sputtered with Ti on the substrate 1 of processing through the first step, make adhesion layer, sputter Cu on adhesion layer again, make Seed Layer, adhesion layer and Seed Layer are combined into the first adhesion-Seed Layer 2, the thickness of the first adhesion-Seed Layer 2 is 100nm, and wherein the thickness of adhesion layer and Seed Layer is respectively 30nm and 70nm;
The 3rd step polyimides and absolute alcohol carry out the mixed diluting that volume ratio is 10:2 proportioning, then coating polyimide 3 in the first adhesion-Seed Layer 2, thickness 10 μ m, baking scheme: 40 minutes, 110 ℃ bakings of 30 minutes, 100 ℃ bakings of 20 minutes, 90 ℃ bakings of 80 ℃ of bakings 50 minutes, then mask plate patterns exposure is 50 seconds;
The 4th step applies positive glue 4 at polyimides 3, thickness 3 μ m, and drying glue 90 ℃, 40 minutes, then mask plate patterns exposure is 30 seconds, develops graphical, and remaining polyimides 3 and positive glue 4 serve as sacrifice layer;
The 5th step is electroplated bridge pier 5, and the metal of plating is gold, and the thickness of bridge pier 5 is identical with the adduction height of polyimides 3 and positive glue 4;
The 6th step is sputtered with Ti on positive glue 4 and bridge pier 5, makes adhesion layer, then on adhesion layer sputter Cu, make Seed Layer, the thickness that adhesion layer and Seed Layer are combined into the second adhesion-Seed Layer the 2 ', the second adhesion-Seed Layer 2 ' is 120nm, and wherein the thickness of adhesion layer and Seed Layer is respectively 30nm and 90nm;
The 7th step is got rid of the second positive glue 4 ' in the second adhesion-Seed Layer 2 ', the thickness of the second positive glue 4 ' is 5 μ m, form synthetic sacrifice layer+adhesion-Seed Layer+photoresist structure, drying glue, after drying glue at the structure graph of the second positive glue 4 ' upper unsettled film 6 of photoetching, the program of described drying glue and technological parameter require be: 1) constant temperature drying glue 20 minutes at 60 ℃ of temperature, then constant temperature drying glue 30 minutes at 75 ℃ of temperature; 2) be warmed up to 80 ℃ from 75 ℃, limiting time is 25 minutes; 3) be warmed up to 85 ℃ from 80 ℃, limiting time is 15 minutes; 4) in exposure air, naturally cool to room temperature;
On the structure graph of the unsettled film 6 that the 8th step obtains in the 7th step, electroplate unsettled film 6, have radius 5 μ m to increase pit on unsettled film, the metal of plating is gold, and the thickness of unsettled film 6 is 3 μ m;
The 9th step wet etching removes positive glue: adopt the KOH solution of mass fraction 3% to soak to dissolve and remove 4 layers, 4 ' layer, the second positive glue and positive glue, after washed with de-ionized water flood is done, dry etching polyimides 3, obtains the movable unsettled membrane structure of non-silicon MEMS of freedom of release.
Except following different, other are identical with embodiment 1.
In the 3rd step, cover polyimides thickness 100 μ m, mask plate patterns exposure 180 seconds; In the 5th step, the metal of electroplating bridge pier 5 is copper; In the 7th step, the thickness of the second positive glue 4 ' is 35 μ m; In the 8th step, have radius 30 μ m to increase pit on unsettled film, the metal of plating is gold, and the thickness of unsettled film 6 is 30 μ m.
Although described spirit of the present invention in detail with reference to specific embodiment, these embodiment are only for example object and do not limit the present invention.Should be appreciated that, do not deviating under the prerequisite of scope and spirit of the present invention, those skilled in the art can change or revise these embodiment.Thereby, in claims, can find a plurality of embodiment outside above-mentioned those embodiment.
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| CN107604331A (en) * | 2017-09-05 | 2018-01-19 | 中国人民解放军陆军装甲兵学院 | A kind of method that Cu/Ti amorphous multilayer films are prepared with solid phase reaction technology |
| CN111086971A (en) * | 2019-12-25 | 2020-05-01 | 大连理工大学 | Transfer printing process method for flexible MEMS device |
| CN114852952A (en) * | 2022-04-11 | 2022-08-05 | 中北大学 | A kind of MEMS ultra-thin suspension film release method |
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| CN104627956A (en) * | 2015-02-09 | 2015-05-20 | 中国电子科技集团公司第五十四研究所 | Preparation method of double-layer optical resist sacrificial layers of RF MEMS device |
| CN104627956B (en) * | 2015-02-09 | 2018-12-07 | 中国电子科技集团公司第五十四研究所 | A kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer |
| CN106124563A (en) * | 2016-06-27 | 2016-11-16 | 哈尔滨理工大学 | A kind of processing method of gas sensors electrode |
| CN107604331A (en) * | 2017-09-05 | 2018-01-19 | 中国人民解放军陆军装甲兵学院 | A kind of method that Cu/Ti amorphous multilayer films are prepared with solid phase reaction technology |
| CN111086971A (en) * | 2019-12-25 | 2020-05-01 | 大连理工大学 | Transfer printing process method for flexible MEMS device |
| CN111086971B (en) * | 2019-12-25 | 2022-06-21 | 大连理工大学 | Transfer printing process method for flexible MEMS device |
| CN114852952A (en) * | 2022-04-11 | 2022-08-05 | 中北大学 | A kind of MEMS ultra-thin suspension film release method |
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