CN103560157B - Strain structure and preparation method thereof - Google Patents

Abstract

The present invention provides a strained structure and a manufacturing method thereof. The method at least includes the following steps: S1: providing a substrate, and sequentially forming a sacrificial layer and a first stress layer on the surface of the substrate from bottom to top; S2: Patterning the first stress layer to form a bridge structure; the bridge structure includes a pair of pedestals formed on the surface of the sacrificial layer and at least one bridge connecting the pair of pedestals; S3: in a Form a second stress layer on the surface of the base; S4: Use wet etching to remove the sacrificial layer under the bridge and the opposite ends of the base, so that the bridge and the pair of bases face each other The suspended ends are crimped to stretch the bridge, resulting in a strained structure. The invention can apply high tensile stress to any material within a certain range, the method is simple and effective, compatible with semiconductor technology, and has the advantages of low cost and fast manufacturing speed.

Description

Strain structure and method of making the same

technical field

The invention belongs to the field of semiconductor manufacturing, and relates to a strain structure and a manufacturing method thereof.

Background technique

As the size of semiconductor devices shrinks, traditional bulk silicon materials are approaching their physical limits. In recent years, many research groups have proposed to use new materials with high carrier mobility to replace traditional silicon materials to make transistors, in order to continue Moore's Law development of. For strained Si, SiGe and other semiconductors, stress will change the energy band structure of the material, reduce the effective mass of carriers, reduce the scattering of phonons, etc., thereby increasing the mobility of carriers and improving the performance of MOS devices; for strain Ge is also applicable. Ge has attracted much attention due to its high hole mobility. By applying tensile stress to Ge, the mobility of electrons and holes in Ge will be greatly improved, improving the performance of the device. And strained Ge can also be applied to optoelectronic devices.

The rapid development of silicon-based optoelectronic integration in recent years is considered to be able to effectively extend the extension of Moore's Law. At present, the main obstacle hindering silicon-based optoelectronic integration technology is how to solve the problem of light sources compatible with silicon. When the tensile stress of the Ge film reaches ~2%, Ge will change from the original indirect bandgap to a direct bandgap, which can be used to make lasers, which can meet the requirements of optoelectronic integration.

There are many ways to prepare tensile strained Ge: 1. Using the difference in thermal expansion coefficient of Ge and Si to directly epitaxial Ge on Si, a tensile strain of ~0.3% can be obtained; 2. Using III-V materials as a buffer layer, large Ge of tensile stress. However, since epitaxial III-V materials require MBE or MOCVD, the price is expensive and the growth rate is slow, which increases the cost.

In addition, for oxides, metals, etc., strain can change their special characteristics such as phase transition point, such as VO ₂ ; or strain can change conductivity, etc., which can meet various applications. However, the production of strained oxides and strained metals also faces various problems.

Therefore, it is necessary to provide a new strain structure and a manufacturing method thereof.

Contents of the invention

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a strained structure and a manufacturing method thereof, which are used to solve the problems in the prior art that it is difficult to prepare high tensile strain materials, and the preparation speed is slow and the cost is high.

In order to achieve the above purpose and other related purposes, the present invention provides a method for fabricating a strained structure, which at least includes the following steps:

S1: providing a substrate, and sequentially forming a sacrificial layer and a first stress layer on the surface of the substrate from bottom to top;

S2: Pattern the first stress layer to form a bridge structure; the bridge structure includes a pair of bases formed on the surface of the sacrificial layer and at least one bridge connecting the pair of bases;

S3: forming a second stress layer on a pair of surfaces of the base;

S4: wet etching is used to remove the sacrificial layer under the bridge and the opposite ends of the base, so that the bridge and the pair of opposite ends of the base are suspended, and the suspended ends are curled to make the The bridge is stretched, resulting in a strained structure.

Optionally, the second stress layer has tensile stress, and a pair of suspended ends of the base are curled upward.

Optionally, the second stress layer has compressive stress, and a pair of suspended ends of the base are curled downward.

Optionally, the material of the first stress layer is metal, oxide or semiconductor; the material of the second stress layer includes one or more of metal, oxide and semiconductor.

Optionally, the second stress layer is a single-layer or composite-layer structure.

Optionally, the material of the first stress layer is metal Ti, Cr, Pt, Au, Ag, Pd, Fe, or oxides Al ₂ O ₃ , ZnO, Si ₃ N ₄ , SiO, SiO ₂ , or semiconductor Si, Ge, III-V group compounds, Six Ge _{1-x ,} wherein 0<x<1; the material of the second stress layer includes metal Ti, Cr, Pt, Au, Ag, Pd, Fe, Co, Ni, or oxides Al ₂ O ₃ , ZnO, Si ₃ N ₄ , SiO, SiO ₂ , or one or more of semiconductors Si, Ge, III-V group compounds, Six Ge _{1-x ,} where 0 <x<1.

Optionally, the materials of the first stress layer and the second stress layer are different.

Optionally, the bridge is a nanowire, a microwire or a nanofilm.

Optionally, the base is square, rectangular, trapezoidal, circular or oval.

Optionally, the material of the sacrificial layer is selected from one of SiO ₂ , Si ₃ N ₄ , Ge, photoresist, PDMS and PMMA, and the sacrificial layer and the first stress layer and the second stress The layers are made of different materials.

The present invention also provides another method for fabricating a strained structure, which at least includes the following steps:

S1: providing a substrate, and sequentially forming a sacrificial layer and a first stress layer on the surface of the substrate from bottom to top;

S2: forming a second stress layer on the surface of the first stress layer, and patterning the second stress layer to form a pair of substrates;

S3: pattern the first stress layer to form a bridge structure; the bridge structure includes a pair of bases formed on the surface of the sacrificial layer and at least one bridge connecting the pair of bases; The base is located below the substrate and overlaps or partially overlaps with the substrate;

S4: wet etching is used to remove the sacrificial layer under the bridge and the opposite ends of the base, so that the bridge and the pair of opposite ends of the base are suspended, and the suspended ends are curled to make the The bridge is stretched, resulting in a strained structure.

The present invention also provides a strained structure, comprising:

Substrate;

a sacrificial layer formed on the surface of the substrate;

A patterned first stress layer formed on the surface of the sacrificial layer; the patterned first stress layer is a bridge structure; the bridge structure includes a pair of bases and at least one connecting the pair of bases bridge;

a second stress layer formed on the surface of the base;

The opposite ends of the bridge and the pair of bases are suspended in the air, and the suspended ends are curled, and the bridge is in a stretched state.

Optionally, the suspended ends of a pair of bases are curled up or down.

Optionally, the bridge is a nanowire, a microwire or a nanofilm.

Optionally, the material of the first stress layer is metal, oxide or semiconductor; the material of the second stress layer includes one or more of metal, oxide and semiconductor.

As mentioned above, the strained structure of the present invention and its manufacturing method have the following beneficial effects: the present invention forms a stress-providing film on the base of the bridge-like structure, and the bridge and a pair of bases face the sacrificial layer below the two ends. After being corroded, the opposite ends of the bridge and the pair of bases are suspended in the air. Due to the stress in the second stress layer on the surface of the base, the suspended ends of the base will be curled to make the bridge stretch , forming a tensile strained material and obtaining a stress structure. The manufacturing method of the stress structure of the present invention can apply tensile stress to any material within a certain range, and the method is simple and effective, compatible with semiconductor technology, and has the advantages of low cost and fast manufacturing speed. The stress structure of the invention has high tensile stress and can improve various performances of devices.

Description of drawings

FIG. 1 shows a process flow diagram of the manufacturing method of the strained structure of the present invention.

2 is a cross-sectional view of the structure after sequentially forming a sacrificial layer and a first stress layer on the substrate in the manufacturing method of the strained structure of the present invention.

FIG. 3 is a top view of the structure after patterning the first stress layer to form a bridge structure in the method for fabricating the strained structure of the present invention.

FIG. 4 is a top view of the structure after forming a second stress layer on the surface of a pair of bases in the manufacturing method of the strained structure of the present invention.

FIG. 5 shows a cross-sectional view of the strained structure of the present invention.

Component designation description

Steps S1～S4

1 substrate

2 sacrificial layers

3 first stress layer

4 bases

5 bridges

6 Second stress layer

detailed description

Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

See Figures 1 through 5. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.

Embodiment one

The present invention provides a method for manufacturing a strained structure, please refer to FIG. 1 , which is a process flow diagram of the method for manufacturing a strained structure of the present invention, at least including the following steps:

Step S1: providing a substrate, and sequentially forming a sacrificial layer and a first stress layer on the surface of the substrate from bottom to top;

Step S2: patterning the first stress layer to form a bridge structure; the bridge structure includes a pair of bases formed on the surface of the sacrificial layer and at least one bridge connecting the pair of bases;

Step S3: forming a second stress layer on a pair of surfaces of the base;

Step S4: using wet etching to remove the sacrificial layer under the bridge and the opposite ends of the base, so that the bridge and the pair of opposite ends of the base are suspended in the air, and the suspended ends are curled so that the The bridge is stretched to obtain a strained structure.

First, please refer to FIG. 2 , step S1 is performed: provide a substrate 1 , and sequentially form a sacrificial layer 2 and a first stress layer 3 on the surface of the substrate 1 from bottom to top.

Specifically, the substrate 1 is a conventional semiconductor substrate, such as Si, Ge, III-V compound materials, etc. In this embodiment, the substrate 1 is preferably a Si substrate.

The material of the sacrificial layer 2 is selected from one of SiO ₂ , Si ₃ N ₄ , Ge, photoresist, PDMS and PMMA, and the material of the sacrificial layer is compatible with the first stress layer and the second stress layer Using different materials. Among them, SiO ₂ can be directly formed on Si substrates by thermal oxidation method, or formed on other types of substrates by chemical vapor deposition; Si ₃ N ₄ can be formed by low-pressure chemical vapor deposition technology or plasma-enhanced chemical vapor deposition technology. Formed on the above-mentioned substrate; PDMS (polydimethylsiloxane) is a kind of polymer material, has good adhesion between silicon chip, can be formed on the described substrate by methods such as spin coating, PDMS Easily soluble in organic solvents such as toluene; PMMA (polymethyl methacrylate), soluble in organic solvents such as phenol, anisole, etc., can form a good film by spin coating and has good dielectric properties. In this embodiment, the sacrificial layer 2 is preferably SiO ₂ , which is directly formed on the Si substrate by thermal oxidation.

The material of the first stress layer 3 is metal, oxide or semiconductor, wherein the metal includes but not limited to Ti, Cr, Pt, Au, Ag, Pd or Fe; the oxide includes but not limited to Al ₂ O ₃ , ZnO , Si ₃ N ₄ , SiO or SiO ₂ , semiconductors include but not limited to Si, Ge, III-V group compounds or Six Ge _{1-x ,} where 0<x<1. For the material of the first stress layer 3 is metal or oxide, methods such as evaporation, sputtering, and epitaxy can be used to form; for the material of the first stress layer 3 is a semiconductor, methods such as chemical vapor deposition and epitaxy can be used. form. In this embodiment, the material of the first stress layer 3 is Ge as an example, preferably formed by epitaxy.

Then referring to FIG. 3, step S2 is performed: patterning the first stress layer 3 to form a bridge structure; the bridge structure includes a pair of bases 4 formed on the surface of the sacrificial layer 2 and connecting the one At least one bridge 5 to the base 4 .

Specifically, the first stress layer 3 is patterned by photolithography and etching processes. The transverse width of the base 4 is greater than the longitudinal width of the bridge. The bridge 5 is nanowire, micron wire, nanofilm or other shapes, and the projection of the base 4 on the horizontal plane is square, rectangular, trapezoidal, circular, elliptical or other shapes. In this embodiment, the bridge 5 is taken as an example of nanowires, wherein the situation of three nanowires is shown in FIG. 2 , of course, the number of the bridges 5 can be adjusted according to actual application conditions.

Referring to FIG. 4 again, step S3 is performed: forming a second stress layer 6 on the surfaces of the pair of bases 4 .

Specifically, the material of the second stress layer 6 includes one or more of metals, oxides, and semiconductors, wherein the metals include but are not limited to Ti, Cr, Pt, Au, Ag, Pd, Fe, Co, and Ni, oxides include but not limited to Al ₂ O ₃ , ZnO, Si ₃ N ₄ , SiO and SiO ₂ ; semiconductors include but not limited to Si, Ge, III-V compounds and one of Six Ge _{1- x} or more, where 0<x<1. The second stress layer 6 can be a single layer or a composite layer structure.

The second stress layer 6 exerts compressive stress or tensile stress on the base 4 . For the material of the second stress layer 6 is metal or oxide, methods such as evaporation, sputtering, and epitaxy can be used to form; for the material of the second stress layer 6 is a semiconductor, methods such as chemical vapor deposition and epitaxy can be used. form. In this embodiment, the material of the second stress layer 6 is preferably Ti, Cr, Si ₃ N ₄ , SiO or SiO ₂ , wherein Ti or Cr is grown by evaporation or sputtering, and Si ₃ N ₄ , SiO or SiO ₂ Formed by chemical vapor deposition.

Generally speaking, it is easier to make single crystal of semiconductor materials by chemical vapor deposition method, and it is easier to get polycrystalline by adjusting the growth parameters or changing the growth method; but it is usually difficult to make it for metals, oxides, etc. Single crystal, generally polycrystalline or amorphous.

The first stress layer 3 and the second stress layer 6 can be made of the same material, and the stress mismatch between the two can be made by adjusting the growth parameters or changing the growth method. In this embodiment, the first stress layer 3 and the second stress layer 6 are preferably made of different materials, so that the second stress layer 6 is more likely to generate compressive stress or tensile stress on the first stress layer 3 , that is, compressive stress or tensile stress is applied to the base 4 . Since the pedestal is formed on the surface of the sacrificial layer 2, this stress is contained. The aforementioned stress includes thermal stress and the like.

Finally, please refer to FIG. 5, and perform step S4: use wet etching to remove the sacrificial layer 2 under the bridge 5 and the opposite ends of the base 4, so that the bridge 5 and the pair of bases 4 face each other. Both ends are suspended in the air, and the suspended two ends are curled to stretch the bridge 5 to obtain a strained structure.

In this embodiment, the sacrificial layer 2 is made of silicon dioxide. In this step, HF solution is used to etch away the sacrificial layer below the bridge 5 and below the two opposite ends of the base 4 to obtain a suspended structure. Since the transverse width of the base 4 is larger than the longitudinal width of the bridge, by controlling the corrosion time, the bridge 5 can be completely suspended while the base 4 is partially suspended. In other embodiments, if the sacrificial layer is photoresist, it can be removed by using a developing solution, and if the sacrificial layer is PDMS or PMMA, it can be removed by using an organic solution.

Specifically, if the second stress layer 6 has tensile stress, the suspended ends of the pair of bases 4 are curled up; if the second stress layer 6 has compressive stress, the pair of bases are suspended Curl down at both ends. In this embodiment, it is preferable to make the second stress layer 6 have a tensile stress, so that the suspended end of the base 4 is curled upwards, and the curling space is large, which is beneficial to make the bridge 5 more stretchable. have greater tensile stress.

For silicon-based tensile strain Ge materials, it can increase the carrier mobility of Ge devices and improve the performance of MOS devices. device applications. For semiconductors such as strained Si and strained SiGe, stress will change the energy band structure of the material, reduce the effective mass of carriers, reduce the scattering of phonons, etc., which can also increase the mobility of carriers and improve the performance of MOS devices. For strained oxides or strained metals, the strain can change their special properties such as phase transition point, or change their electrical conductivity, suitable for applications in different fields.

So far, the manufacturing method of the strained structure of the present invention is used to complete the manufacturing of the strained structure. The manufacturing method of the strained structure of the present invention forms a stress-providing thin film on the base of the bridge-like structure, and after the sacrificial layer below the opposite ends of the bridge and the pair of bases is corroded, the bridge and the pair of bases face each other. Both ends are suspended in the air, and because the stress exists in the second stress layer on the surface of the base, the suspended end of the base will be curled to stretch the bridge to form a tensile strain material and obtain a stress structure. The manufacturing method of the stress structure of the present invention can apply tensile stress to any material within a certain range, and the method is simple and effective, compatible with semiconductor technology, and has the advantages of low cost and fast manufacturing speed. The stress structure produced by the invention has high tensile stress and can improve various performances of devices.

Embodiment two

This embodiment adopts basically the same technical solution as Embodiment 1, except that the order of steps S2 and S3 is adjusted. In the first embodiment, the first stress layer is first patterned to form a bridge structure, and then the second stress layer is formed on the base of the bridge structure; and in this embodiment, after the formation of the first stress layer, the second stress layer is formed. A second stress layer is formed on the surface of the first stress layer, wherein the second stress layer coincides with the base of the bridge structure to be formed later, and then the first stress layer is patterned to form the bridge structure. The adjustment of the fabrication order does not affect the finally formed strained structure.

The present invention also provides another method for fabricating a strained structure, which at least includes the following steps:

Step S1: providing a substrate, and sequentially forming a sacrificial layer and a first stress layer on the surface of the substrate from bottom to top;

Step S2: forming a second stress layer on the surface of the first stress layer, and patterning the second stress layer to form a pair of substrates;

Step S3: patterning the first stress layer to form a bridge structure; the bridge structure includes a pair of bases formed on the surface of the sacrificial layer and at least one bridge connecting the pair of bases; The base is located below the substrate and overlaps or partially overlaps with the substrate;

Step S4: using wet etching to remove the sacrificial layer under the bridge and the opposite ends of the base, so that the bridge and the pair of opposite ends of the base are suspended in the air, and the suspended ends are curled so that the The bridge is stretched to obtain a strained structure.

Except for the order of the steps in this embodiment, the specific implementation manner or method is basically the same as that in Embodiment 1. Please refer to the description of the corresponding part in Embodiment 1, and details will not be repeated here.

Embodiment three

The present invention also provides a strained structure, please refer to Figure 5, which is a schematic cross-sectional view of the strained structure, including:

substrate1;

a sacrificial layer 2 formed on the surface of the substrate 1;

The patterned first stress layer is formed on the surface of the sacrificial layer 2; the patterned first stress layer is a bridge structure; the bridge structure includes a pair of bases 4 and a pair of bases 4 connected at least one bridge5;

A second stress layer 6 formed on the surface of the base 4;

The opposite ends of the bridge 5 and the pair of bases 4 are suspended in the air, and the suspended ends are curled, and the bridge 5 is in a stretched state.

Specifically, the suspended ends of a pair of bases 4 are curled up or down, and the bridges 5 are nanowires, microwires or nanofilms.

The material of the first stress layer is metal, oxide or semiconductor, wherein, metal includes but not limited to Ti, Cr, Pt, Au, Ag, Pd or Fe; oxide includes but not limited to Al ₂ O ₃ , ZnO, Si ₃ N ₄ , SiO or SiO ₂ , semiconductors include but not limited to Si, Ge, III-V group compounds or Six Ge _{1-x ,} where 0<x<1. If the material of the first stress layer is metal or oxide, it can be formed by evaporation, sputtering, epitaxy and other methods; if the material of the first stress layer is semiconductor, it can be formed by chemical vapor deposition, epitaxy and other methods. In this embodiment, the material of the first stress layer 3 is preferably Ge, which is formed by epitaxy.

The material of the second stress layer 6 includes one or more of metals, oxides and semiconductors, wherein metals include but not limited to Ti, Cr, Pt, Au, Ag, Pd, Fe, Co and Ni, oxides Compounds include but not limited to Al ₂ O ₃ , ZnO, Si ₃ N ₄ , SiO and SiO ₂ ; semiconductors include but not limited to one or more of Si, Ge, III-V compounds and Six Ge _{1- x} , where 0<x<1. The second stress layer 6 can be a single layer or a composite layer structure. In this embodiment, the material of the second stress layer 6 is preferably Ti, Cr, Si ₃ N ₄ , SiO or SiO ₂ .

The first stress layer 3 and the second stress layer 6 can be made of the same material or different materials. In this embodiment, the first stress layer 3 and the second stress layer 6 are preferably made of different materials, so that the second stress layer 6 is more likely to generate compressive stress or tensile stress on the first stress layer 3 , that is, applying compressive stress or tensile stress to the base 4, so that the bridge 5 can be stretched to a higher degree, and a larger tensile stress can be obtained.

In the strain structure of the present invention, the first stress layer is a bridge-like structure, and the bridge of the bridge-like structure and a pair of bases are suspended in the air at opposite ends, because a film providing stress (second stress) is formed on the base of the bridge-like structure. layer), the suspended end of the base is crimped to stretch the bridge, forming a high tensile strain material. The stress structure of the present invention has high tensile stress, is applicable to any material within a certain range, can satisfy applications in different fields, and improves device performance.

In summary, the strained structure and its manufacturing method of the present invention form a stress-providing film on the base of the bridge-like structure, and after the sacrificial layer under the bridge and a pair of bases facing opposite ends is corroded, the bridge and a pair of pedestals are suspended at opposite ends, because the stress exists in the second stress layer on the surface of the pedestal, the suspended end of the pedestal will be curled to make the bridge stretch, forming a tensile strain material, and obtaining stress structure. The manufacturing method of the stress structure of the present invention can apply tensile stress to any material within a certain range, and the method is simple and effective, compatible with semiconductor technology, and has the advantages of low cost and fast manufacturing speed. The stress structure produced by the invention has high tensile stress and can improve various performances of devices. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.

The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims (15)

1. a manufacture method for strain structure, is characterized in that, at least comprises the following steps:

S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;

S2: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base;

S3: base-plates surface forms the second stressor layers described in a pair;

S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.

2. the manufacture method of strain structure according to claim 1, is characterized in that: described second stressor layers has tensile stress, and the unsettled two ends of pedestal described in a pair upsweep.

3. the manufacture method of strain structure according to claim 1, is characterized in that: described second stressor layers has compression, and the unsettled two ends of pedestal described in a pair are curling downwards.

4. the manufacture method of strain structure according to claim 1, is characterized in that: the material of described first stressor layers is Si ₃n ₄, metal, oxide or semiconductor; The material of described second stressor layers comprises Si ₃n ₄, metal, one or more in oxide and semiconductor.

5. the manufacture method of strain structure according to claim 4, is characterized in that: described second stressor layers is individual layer or lamination layer structure.

6. the manufacture method of strain structure according to claim 4, is characterized in that: the material of described first stressor layers is Si ₃n ₄, metal Ti, Cr, Pt, Au, Ag, Pd, Fe, or oxide Al ₂o ₃, ZnO, SiO, SiO ₂, or semiconductor Si, Ge, III-V compounds of group, Si _xge _1-x, wherein 0<x<1; The material of described second stressor layers comprises Si ₃n ₄, metal Ti, Cr, Pt, Au, Ag, Pd, Fe, Co, Ni, or oxide Al ₂o ₃, ZnO, SiO, SiO ₂, or semiconductor Si, Ge, III-V compounds of group, Si _xge _1-xin one or more, wherein 0<x<1.

7. the manufacture method of the strain structure according to claim 1,4,5 or 6, is characterized in that: described first stressor layers is different from the material of described second stressor layers.

8. the manufacture method of strain structure according to claim 1, is characterized in that: described bridge is nano wire, micro wire or nano thin-film.

9. the manufacture method of strain structure according to claim 1, is characterized in that: described pedestal is square, rectangle, trapezoidal, circular or oval.

10. the manufacture method of strain structure according to claim 1, is characterized in that: the material of described sacrifice layer is selected from SiO ₂, Si ₃n ₄, Ge, photoresist, one in PDMS and PMMA, and described sacrifice layer adopts different materials from described first stressor layers and the second stressor layers.

The manufacture method of 11. 1 kinds of strain structure, is characterized in that, at least comprises the following steps:

S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;

S2: form the second stressor layers on described first stressor layers surface, and described second stressor layers is graphical, form a pair substrate;

S3: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base; Described pedestal to be positioned at below described substrate and with described substrates while stacking or partially overlap;

S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.

12. 1 kinds of strain structure, comprising:

Substrate;

Be formed at the sacrifice layer of described substrate surface;

Patterned first stressor layers, is formed at described sacrificial layer surface; This patterned first stressor layers is bridge-like structure; Described bridge-like structure comprises pair of base and connects at least one bridge of this pair of base;

Be formed at the second stressor layers of described base-plates surface;

It is characterized in that:

Described in described bridge and a pair, two ends are unsettled in opposite directions for pedestal, and these unsettled two ends are curling, and described bridge is extended state.

13. strain structure according to claim 12, is characterized in that: the unsettled two ends of pedestal described in a pair upsweep or curling downwards.

14. strain structure according to claim 12, is characterized in that: described bridge is nano wire, micro wire or nano thin-film.

15. strain structure according to claim 12, is characterized in that: the material of described first stressor layers is Si ₃n ₄, metal, oxide or semiconductor; The material of described second stressor layers comprises Si ₃n ₄, metal, one or more in oxide and semiconductor.