CN103545353B - A kind of heated by electrodes utmost point and processing technology thereof - Google Patents

Abstract

An electrode heating electrode and its processing technology, including a substrate, a heating electrode layer, an isolation layer and an electrode layer, the heating electrode layer is deposited on the substrate by deposition, and a silicon dioxide isolation layer is also deposited on the heating electrode layer , the metal electrode layer is coated on the heating electrode layer and the isolation layer by deposition, and the electrode layer on the upper part of the isolation layer is removed by etching. The present invention utilizes the principle that the etching rate of silicon dioxide is quite different from that of metal etching to add a silicon dioxide isolation layer between the electrode layer and the heating electrode layer, which plays a good role in the etching of the electrode layer. The protective function effectively prevents the heating electrode layer from being etched, ensures the integrity of the heating electrode layer, greatly reduces the difficulty of controlling the accuracy of etching time, and improves the heating electrode performance of the product.

Description

A kind of electrode heating pole and its processing technology

technical field

The invention relates to a chip electrode, in particular to an electrode heating electrode and its processing technology.

Background technique

At present, the electrode layer of the chip is usually covered with a thin film electrode layer on the surface of the substrate, and then the redundant electrode layer is removed by etching to form the electrode layer of the final required circuit.

Thin film deposition is a commonly used processing method in chip processing. Through the deposition process, various conductive thin film layers, insulating thin film layers or semiconductor thin film layers can be grown on the substrate. The reason why the electrode layer is very thin is that it can have a very uniform temperature coefficient of resistance and a low dielectric constant, which can make the signal transmission loss smaller, and the thin electrode layer has a smaller temperature rise when passing a large current, which is good for heat dissipation. and component life are of great benefit. Then it is necessary to etch the deposited entire electrode layer into the desired circuit. The circuit design of the chip is printed into a film with a photolithography machine, and then a photosensitive dry film whose main component is sensitive to a specific spectrum and undergoes a chemical reaction is covered on the substrate. There are two types of dry film, photopolymerization type and photodecomposition type. The polymeric dry film will harden under the light of a specific spectrum, changing from water-soluble to water-insoluble, while the photodecomposition type is just the opposite. First cover the substrate with a photopolymerizable photosensitive dry film, and then cover it with a layer of circuit film to expose it. The exposed part is black and opaque, otherwise it is transparent (the circuit part). The light is irradiated on the photosensitive dry film through the film, and the dry film becomes darker and hardens where the film is transparent and transparent, and it tightly wraps the electrode layer on the surface of the substrate, just like printing the circuit diagram on the substrate. The development step (using sodium carbonate solution to wash off the unhardened dry film) exposes the electrode layer that does not need dry film protection, which is called the stripping process.

Then it is necessary to use etching to remove the useless electrode layer part. Currently, the commonly used etching methods are dry etching and wet etching. Wet etching is a purely chemical reaction process, which refers to using the chemical reaction between the solution and the pre-etching material to remove the part not masked by the masking film material to achieve the purpose of etching. There are many types of dry etching, including light volatilization, vapor phase etching, plasma etching, etc. Dry etching has good anisotropy, high selection ratio, good controllability, flexibility and repeatability, safe operation of thin lines, easy automation, no chemical waste liquid, no pollution in the treatment process, and high cleanliness.

In the optical splitter device, the substrate is covered with two layers of thin films, the electrode layer and the heating electrode layer. The electrode layer and the heating electrode layer are made of metals of different materials. The traditional method is to deposit a Layer heating layer, then deposit an electrode layer on it, and then etch the electrode layer to form the required conductive lines. When etching the electrode layer, since the etching rate of the metal material is similar, and the electrode layer and the heating electrode layer are adjacent, the heating electrode will also be etched, and the thickness of the electrode layer and the heating electrode layer is extremely thin, which controls the etching accuracy If the difficulty is too high, once the control is not good, the heating electrode will be etched, causing damage and seriously affecting the performance of the device.

Contents of the invention

The technical problem to be solved and the technical task proposed by the present invention are to improve the existing technology, provide an electrode heating electrode and its processing technology, and solve the problem that the control of the etching precision of the electrode layer is too difficult in the current technology, which easily causes the heating electrode The layer is etched, which seriously affects the performance of the device.

For solving above technical problem, technical scheme of the present invention is:

An electrode heating pole, comprising a base material, a heating pole layer, an isolation layer and an electrode layer, is characterized in that the heating pole layer is covered on the base material by deposition, and the isolation layer is also deposited on the heating pole layer, and the electrode layer The heating electrode layer and the isolation layer are covered by deposition, and the electrode layer on the upper part of the isolation layer is removed by etching. The top of the heating electrode layer is protected by an isolation layer. When the electrode layer is etched, it can ensure that the heating electrode layer is not etched and its integrity is ensured, thereby ensuring the performance of the product heating electrode, and the electrical properties of the electrode layer and the heating electrode layer. The performance will not be affected, and the electrical and heating functions can be realized safely and normally.

Further, the isolation layer is made of silicon dioxide, the etching rate of silicon dioxide is quite different from the etching rate of metal, and the silicon dioxide of the isolation layer will not be etched rapidly when the metal electrode layer is etched. Corrosion, so as to isolate the heating pole layer from the outside world, so as to play a good protective effect and ensure the integrity of the heating pole layer.

Further, the deposition thickness of the isolation layer is 2000-30000 angstroms, and the deposition thickness of the isolation layer should be reduced as much as possible to ensure the effect of isolating and protecting the heating electrode layer, thereby reducing the production cost of the product.

The processing technology for making the electrode heating electrode includes the following steps: film deposition and etching, which is characterized in that a layer of heating electrode layer is deposited on the substrate, and then the heating electrode layer is etched into the required circuit pattern and then Deposit a layer of silicon dioxide isolation layer on the heating electrode layer, and then perform isolation layer etching to remove the isolation layer covering the two sides of the heating electrode layer so that the isolation layer only covers the top surface of the heating electrode layer. When etching the silicon dioxide layer, since the silicon dioxide etching gas basically does not etch the metal material, after etching the silicon dioxide, the heating electrode remains intact. On this basis, the electrode layer is deposited, and the top surface of the isolation layer is removed by etching. The electrode layer forms the desired wiring. When etching the electrode layer, due to the protection of the isolation layer silicon dioxide, the heating will not be damaged, which greatly reduces the difficulty of etching control, reduces the difficulty of controlling the precise etching time, and simplifies production. And improve the performance of the heating pole of the product.

Further, the etching adopts dry etching. Dry etching has a strong physical etching direction and can achieve anisotropic etching, but cannot perform selective etching; chemical etching uses chemically active atomic groups in the plasma to chemically react with the etched material , so as to achieve the purpose of etching. Since the core of etching is still a chemical reaction (but it does not involve the gas state of the solution), the etching effect is somewhat similar to wet etching, with better selectivity, but poor anisotropy. The use of dry etching has the advantages of good anisotropy and selectivity at the same time, ensuring the etching effect.

Further, the film deposition adopts chemical vapor deposition to ensure the uniformity of film thickness. Chemical vapor deposition is to introduce gaseous reactants containing film elements into the reaction chamber, and chemical reactions occur on the surface of the wafer, thereby forming the required solid film and depositing it on the surface. The deposition temperature of the chemical vapor deposition method is low, the film composition and thickness are easy to control, the film thickness is proportional to the deposition time, the uniformity and repeatability are good, the step coverage is good, and the operation is convenient.

Compared with the prior art, the present invention has the advantages of:

The electrode heating electrode and its processing technology according to the present invention use the principle that the etching rate of silicon dioxide is quite different from that of metal etching to add a layer of silicon dioxide isolation layer between the electrode layer and the heating electrode layer. The etching of the electrode layer plays a good protective role, effectively avoiding the etching of the heating electrode layer, ensuring the integrity of the heating electrode layer, greatly reducing the difficulty of controlling the etching time accuracy, and effectively reducing the difficulty of production. The heating polarity of the product is improved; the invention has simple structure, mature manufacturing technology, easy operation, low manufacturing cost and easy mass production.

Description of drawings

Fig. 1 is the structural representation of depositing isolation layer of the present invention;

Fig. 2 is the structural representation of etching isolation layer of the present invention;

Fig. 3 is the structure schematic diagram of deposition electrode layer of the present invention;

FIG. 4 is a schematic structural view of an etching electrode layer according to the present invention.

detailed description

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

An electrode heating electrode and its processing technology disclosed in the embodiments of the present invention are aimed at reducing the difficulty of electrode layer etching control, protecting the heating electrode layer, and improving the heating electrode performance of products.

As shown in Figures 1 to 4, an electrode heating electrode includes a base material 1, a heating electrode layer 2, an isolation layer 3 and an electrode layer 4, the isolation layer 3 is made of silicon dioxide, and the heating electrode layer 2 made of metal Cover the base material 1 by deposition, and then deposit an isolation layer 3 made of silicon dioxide on the heating electrode layer 2. The deposition thickness of the isolation layer 3 is 2000-30000 angstroms, and the electrode layer 4 is covered by deposition. Covering the heating electrode layer 2 and the isolation layer 3, the electrode layer 4 on the upper part of the isolation layer 3 is removed by etching. When the electrode layer is etched, the heating electrode layer will not be damaged due to the protection of the isolation layer silicon dioxide.

A heating electrode layer 2 is deposited on the substrate 1 by chemical vapor deposition, and the heating electrode layer 2 is etched into a desired circuit pattern by reactive ion etching. As shown in FIG. 1 , the heating electrode layer 2 is deposited Build up a layer of silicon dioxide spacer layer 3, and then as shown in Figure 2, carry out the etching of spacer layer 3, remove the spacer layer 3 that covers the heating electrode layer 2 two sides place, make spacer layer 3 only cover the heating pole On the top surface of layer 2, since the silicon dioxide etching gas basically does not etch metal, after etching silicon dioxide, the metal of the heating electrode remains intact, as shown in Figure 3. On this basis, the heating electrode layer 2 and Electrode layer 4 is deposited on the isolation layer 3, so that both sides of the heating electrode layer 2 are connected to the electrode layer to ensure electrical communication and heat conduction. Finally, as shown in FIG. 4, the electrode layer 4 on the top surface of the isolation layer 3 is removed by etching to make to form the desired line.

The above are only preferred implementations of the present invention. It should be noted that the above preferred implementations should not be regarded as limiting the present invention, and the scope of protection of the present invention should be based on the scope defined in the claims. For those skilled in the art, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims (4)

1. An electrode heating pole, comprising a base material (1), a heating pole layer (2), an isolation layer (3) and an electrode layer (4), is characterized in that the heating pole layer (2) is covered by deposition On the base material (1), the heating electrode layer (2) is etched into the required circuit pattern, and an isolation layer (3) is also deposited on the heating electrode layer (2), and the coating on both sides of the heating electrode layer (2) is removed. The isolation layer (3) at the side makes the isolation layer (3) only cover the top surface of the heating electrode layer (2), and the electrode layer (4) covers the heating electrode layer (2) and the isolation layer (3) by deposition. ), the electrode layer (4) on the upper part of the isolation layer (3) is removed by etching, the isolation layer (3) is made of silicon dioxide, and the deposition thickness of the isolation layer (3) is between 2000 and 30000 angstroms between. 2. The processing technology of making the electrode heating pole, comprising the following steps: film deposition and etching, characterized in that a layer of heating pole layer (2) is deposited on the substrate (1), and then the heating pole layer (2) ) etch into the desired circuit pattern and then deposit a layer of silicon dioxide isolation layer (3) on the heating electrode layer (2), then perform etching of the isolation layer (3) to remove the coating on the heating electrode layer (2) The isolation layer (3) at the two sides makes the isolation layer (3) only cover the top surface of the heating electrode layer (2), and then deposits the electrode layer (4) on this basis, and removes the isolation layer (3) by etching ) The electrode layer (4) on the top surface forms the required circuit. 3. The electrode heating electrode processing technology according to claim 2, characterized in that, said etching adopts dry etching. 4. The electrode heating electrode processing technology according to claim 3, characterized in that the film deposition adopts chemical vapor deposition to ensure the uniformity of film thickness.