CN103543414A - 3D planar magnetic sensor - Google Patents

Abstract

A three-dimensional plane magnetic sensor comprises a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a circuit, wherein the first magnetic sensor, the second magnetic sensor and the third magnetic sensor are arranged on the same plane and are used for respectively measuring components of a first direction, a second direction and a third direction of a magnetic field, the third direction is perpendicular to the first direction and the second direction, the third magnetic sensor comprises a third fixed layer, a third magnetic insulation layer and a third free layer, the magnetization direction of the third fixed layer is the third direction or the reverse direction, the spontaneous magnetization direction of the third free layer is the first direction, the second direction or the inclination of 0-180 degrees with the third direction, the magnetic resistance value of the third free layer is an intermediate value in the spontaneous magnetization direction, and the magnetic resistance value changes under the action of the magnetic field.

Description

3D planar magnetic sensor

technical field

The invention relates to a three-dimensional planar magnetic sensor, mainly capable of arranging sensors for measuring X, Y, and Z directions on the same plane with a semiconductor manufacturing process.

Background technique

With the development of science and technology, the demand for electronic maps and navigation has increased significantly. Therefore, the demand for magnetic sensors has also increased. With the characteristics of magnetic induction, it can be quickly applied to navigation and global positioning systems. With the development of electronic products The thin and short design reduces the overall product volume, and the design of the magnetic sensor is also tested.

The current magnetic sensor setup usually has three magnetic sensors with the same structure, and the two are arranged in the vertical direction of the same plane to measure the X-axis component and the Y-axis component of the magnetic field, and to measure The other magnetic sensor of the Z-axis component of the magnetic field needs to be installed perpendicular to the other two. As the size of the current integrated circuit is getting smaller and smaller, due to the vertical connection, the manufacturing process needs to be carried out in two stages, and the process of vertical connection, in the manufacturing process It is difficult to standardize, it is difficult to improve the yield rate, and it is prone to failure, which increases the overall cost.

Therefore, there is a need for a sensor structure that can reduce the overall volume and arrange the magnetic sensors in three directions on the same plane to reduce the problems in the manufacturing process.

Contents of the invention

A three-dimensional planar magnetic sensor, comprising a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a circuit, the first magnetic sensor is used to measure a component of an external magnetic field in a first direction; the second magnetic sensor uses To measure the component of the external magnetic field in the second direction, the second direction is perpendicular to the first direction on a plane; the third magnetic sensor is used to measure the component of the external magnetic field in a third direction, the third direction perpendicular to both the first direction and the second direction; and a circuit, connected to the first magnetic sensor, the second magnetic sensor, and the third magnetic sensor, for the first magnetic sensor, the second magnetic sensor, and the The third magnetic sensor provides current or voltage, wherein the first magnetic sensor, the second magnetic sensor and the third magnetic sensor are arranged on the same plane.

The third magnetic sensor includes at least one third fixed layer, at least one third magnetic insulating layer and a third free layer, the third free layer is arranged on the uppermost layer, and the at least one third magnetic insulating layer is arranged on the at least one Between the third pinned layers, and between the uppermost layer of the at least one third pinned layer and the third free layer, wherein the magnetization direction of the at least third pinned layer is a third direction or is 180 to the third direction degrees opposite, the spontaneous magnetization direction of the third free layer is the first direction, the second direction or is inclined from 0 to 180 degrees with the third direction, and the magnetoresistance value of the third free layer is within the range of the third free layer The spontaneous direction of the layer is an intermediate value, and when subjected to the external magnetic field, the magnetoresistance value will become larger or smaller, so as to measure the component of the magnetic field in the third direction. The magnetization direction of each of the third fixed layers is all the third direction or is 180 degrees opposite to the third direction, and it can also be a stack structure arranged in reverse order by the third magnetic insulating layer, that is, at the The magnetization direction of the third pinned layer on the third magnetic insulating layer is the third direction, and the magnetization direction of the third pinned layer under the third magnetic insulating layer is 180 degrees opposite to the third direction.

The feature of the present invention is that a hybrid spin valve is formed by using the characteristics of tunneling magnetoresistance, so that the magnetic field sensors for measuring X, Y, and Z directions can be arranged on the same plane, and the semiconductor manufacturing process commonly used at present can be used It can be produced without the traditional vertical bonding steps, which can improve productivity, yield and durability, while reducing costs and production time.

Description of drawings

1 and 2 are schematic diagrams of components of the three-dimensional planar magnetic sensor of the present invention.

Wherein, the reference signs are explained as follows:

1 Three-dimensional planar magnetic sensor

10 first magnetic sensor

11 first fixed layer

13 The first magnetic insulating layer

15 first free floor

20 second magnetic sensor

21 second fixed layer

23 second magnetic insulation layer

25 second free floor

30 third magnetic sensor

31 third fixed layer

33 third magnetic insulation layer

35 third free floor

40 circuits

Detailed ways

The following describes the implementation of the present invention in more detail with reference to the drawings and component symbols, and enables those skilled in the art to implement it after studying this specification.

Referring to FIG. 1 and FIG. 2 , there are schematic diagrams of components of the three-dimensional planar magnetic sensor of the present invention. As shown in Fig. 1 and Fig. 2, the three-dimensional planar magnetic sensor 1 of the present invention comprises a first magnetic sensor 10, a second magnetic sensor 20, a third magnetic sensor 30 and a circuit 40, and the first magnetic sensor 10, the second magnetic sensor The magnetic sensor 20 and the third magnetic sensor 30 are arranged on the same plane, and the first magnetic sensor 10 , the second magnetic sensor 20 and the third magnetic sensor 30 are connected to the circuit 40 .

The first magnetic sensor 10 includes at least one first fixed layer 11, at least one first magnetic insulating layer 13 and a first free layer 15, the first free layer 15 is arranged on the uppermost layer, and the at least one first magnetic insulating layer 13 is arranged Between the uppermost first pinned layer 11, and between the first pinned layer 11 and the first free layer 15, wherein the spontaneous magnetization direction of the first free layer 15 is the first direction, and the first free layer 15 The magnetoresistance value is the minimum value in the first direction, and when subjected to an external magnetic force, the magnetization direction of the first free layer 15 will deviate from time to time, and the magnetoresistance value becomes larger, and then it can be calculated by the change of the magnetoresistance value The component of the external magnetic force in the first direction. The magnetization directions of each of the first pinned layers 11 are all in the first direction or 180 degrees opposite to the first direction, and can also be a stack structure arranged in reverse order by the first magnetic insulating layer 13, that is, The magnetization direction of the first pinned layer 11 on the first magnetic insulating layer 13 is the first direction, and the magnetization direction of the first pinned layer 11 under the first magnetic insulating layer 13 is 180 degrees opposite to the first direction.

The second magnetic sensor 20 includes at least one second fixed layer 21, at least one second magnetic insulating layer 23 and a second free layer 25, the second free layer 25 is arranged on the uppermost layer, and the at least one second magnetic insulating layer 23 is arranged Between the second pinned layers 21 , and between the uppermost second pinned layer 21 and the second free layer 25 . The spontaneous magnetization direction of the second free layer 25 is the second direction, and the second direction is perpendicular to the first direction on the same plane. The magnetoresistance value of this second free layer 25 is the minimum value when being in the second direction, and when subjected to external magnetic force, the magnetization direction of the second free layer 25 will deviate from meeting, and the magnetoresistance value becomes larger, and then can be by The change in the magnetic resistance value calculates the component of the external magnetic force in the second direction. The magnetization direction of each of the second pinned layers 21 is all the second direction or 180 degrees opposite to the second direction, and may also be a stack structure arranged in reverse order by the second magnetic insulating layer 23, that is, The magnetization direction of the second pinned layer 21 on the second magnetic insulating layer 23 is the second direction, and the magnetization direction of the second pinned layer 21 under the second magnetic insulating layer 23 is 180 degrees opposite to the second direction.

The third magnetic sensor 30 includes at least one third fixed layer 31, at least one third magnetic insulating layer 33 and a third free layer 35, the third free layer 35 is arranged on the uppermost layer, and the at least one third magnetic insulating layer 33 is arranged Between the third pinned layer 31, and between the third pinned layer 31 and the uppermost third free layer 35, wherein the magnetization direction of the third pinned layer 31 can be all in the third direction or be 180 degrees with the third direction Reversely, the third direction is perpendicular to both the first direction and the second direction. The spontaneous magnetization direction of the third free layer 35 is the first direction, the second direction, or is inclined from 0 to 180 degrees with the third direction, and the magnetoresistance value of the third free layer 35 is an intermediate value in its spontaneous direction, When subjected to an external magnetic force, the magnetization direction of the third free layer 25 will shift, and the corresponding magnetoresistance value will increase or decrease, and then the external magnetic force can be calculated by the change of the magnetoresistance value. The component of the direction. The magnetization directions of each of the third pinned layers 31 are all in the third direction or 180 degrees opposite to the third direction, and may also be a stacked structure separated by the third magnetic insulating layer 33 into an opposite arrangement, that is, The magnetization direction of the third pinned layer 31 on the third magnetic insulating layer 33 is the third direction, and the magnetization direction of the third pinned layer 31 under the third magnetic insulating layer 33 is 180 degrees opposite to the third direction.

The circuit 40 is connected to the first magnetic sensor 10, the second magnetic sensor 20, and the third magnetic sensor 30, and provides current to pass through the first magnetic sensor 10, the second magnetic sensor 20, and the third magnetic sensor 30, so that current or voltage can pass through To generate magnetism to the first free layer 15, the second free layer 25, and the third free layer 35, thereby measuring the variation of the magnetoresistance values of the first free layer 15, the second free layer 25, and the third free layer 35, and The change of the magnetic resistance value is converted into a current or voltage signal, which is transmitted to an external computing device (not shown), and can be applied to various magnetic positioning devices.

Wherein the material of the first fixed layer 11 and the second fixed layer 21 is iron (Fe), cobalt (Co), nickel (Ni), cobalt-iron-boron (CoFeB) alloy, nickel-iron (NiFe) alloy, cobalt-iron ( CoFe) alloy, face-centered structure-cobalt-platinum (FCC-CoPt) alloy, L1 ₀ cobalt-platinum alloy (L1 ₀ -CoPt), face-centered structure-iron-platinum (FCC-FePt) alloy, L1 ₀ iron-platinum alloy (L1 ₀ - at least one of ferromagnetic alloys such as FePt). The material of the third fixed layer 31 is iron (Fe), cobalt (Co), nickel (Ni), cobalt-iron-boron (CoFeB) alloy, mD ₀ 19 cobalt-platinum alloy mD ₀ 19-CoPt), L1 ₀ iron-palladium alloy (L1 ₁ -FePd), L1 ₀ cobalt platinum alloy (L1 ₀ -CoPt), L1 ₁ -cobalt platinum alloy (L1 ₁ -CoPt), L1 ₀ iron platinum alloy (L1 ₀ -FePt), cobalt/platinum multilayer stack structure ([Co/Pt] _n multilayer), cobalt/palladium multilayer stack structure ([Co/Pd] _n multilayer), nickel/palladium multilayer stack structure ([Ni/Pd] _n multilayer), nickel/platinum multilayer Stack structure ([Ni/Pt] _n multilayer), cobalt-iron-boron alloy/platinum multilayer stack structure ([CoFeB/Pt] _n multilayer), cobalt-iron-boron alloy/palladium multilayer stack structure ([CoFeB/Pd] _n multilayer ), nickel-iron alloy/platinum multilayer stack structure ([NiFe/Pt] _n multilayer), nickel-iron alloy/palladium multilayer stack structure ([NiFe/Pd] _n multilayer), cobalt-iron alloy/platinum multilayer stack structure ([CoFe/Pt] n multilayer) At least one of Pt] _n multilayer), cobalt-iron alloy/palladium multilayer stack structure ([CoFe/Pd] _n multilayer), isoferromagnetic alloy, or isoferromagnetic alloy multilayer film.

The material of the first free layer 15 and the second free layer 25 is iron (Fe), cobalt (Co), nickel (Ni), cobalt iron boron (CoFeB) alloy, nickel iron (NiFe) alloy, cobalt iron (CoFe ) alloy, cobalt-nickel (CoNi) alloy, and at least one of other ferromagnetic alloys, the material of the third free layer 35 is iron (Fe), cobalt (Co), nickel (Ni), cobalt-iron-boron (CoFeB ) alloy, mD ₀ 19 cobalt-platinum alloy (mD ₀ 19-CoPt), L1 ₀ cobalt-platinum alloy (L1 ₀ -CoPt), L1 ₁ -cobalt-platinum alloy (L1 ₁ -CoPt), L1 ₀ iron-platinum alloy (L1 ₀ -FePt), L1 ₀ iron-palladium alloy (L1 ₀ -FePd), cobalt/platinum multilayer stack structure ([Co/Pt] _n multilayer), cobalt/palladium multilayer stack structure ([Co/Pd] _n multilayer), Nickel/palladium multilayer stack structure ([Ni/Pd] _n multilayer), nickel/platinum multilayer stack structure ([Ni/Pt] _n multilayer), cobalt-iron-boron alloy/platinum multilayer stack structure ([CoFeB/Pt] _n multilayer), cobalt-iron-boron alloy/palladium multilayer stack structure ([CoFeB/Pd] _n multilayer), nickel-iron alloy/platinum multilayer stack structure ([NiFe/Pt] _n multilayer), nickel-iron alloy/palladium multilayer stack structure ([NiFe/Pd] _n multilayer), cobalt-iron alloy/platinum multilayer stack structure ([CoFe/Pt] _n multilayer), cobalt-iron alloy/palladium multilayer stack structure ([CoFe/Pd] _n multilayer), and other ferromagnetic alloys , or at least one of ferromagnetic alloy multilayer films.

The first magnetic insulating layer 13 and the second magnetic insulating layer 23 can be made by nonmagnetic metal or electromagnetic insulator, and the third magnetic insulating layer 33 is made by electromagnetic insulator, and wherein this nonmagnetic metal comprises ruthenium (Ru), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu), palladium (Pd), molybdenum (Mo) and niobium (Nb); the electromagnetic insulator contains magnesium oxide (MgO), oxide At least one of aluminum (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), and silicon dioxide (SiO ₂ ).

The feature of the present invention is that a hybrid spin valve is formed by using the characteristics of tunneling magnetoresistance, so that the magnetic field sensors for measuring X, Y, and Z directions can be arranged on the same plane, and the semiconductor manufacturing process commonly used at present can be used It can be produced without the traditional vertical bonding steps, which can improve productivity, yield and durability, while reducing costs and production time.

The above descriptions are only preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention made under the same spirit of the invention is valid. Still should be included in the category that the present invention intends to protect.

Claims (13)

1. a three-dimensional planar Magnetic Sensor, is characterized in that, comprises:

One first Magnetic Sensor, in order to measure an external magnetic field at the component of a first direction;

One second Magnetic Sensor, in order to measure an external magnetic field at the component of a second direction, this second direction is vertical in a plane with this first direction;

One the 3rd Magnetic Sensor, comprise at least one the 3rd fixed bed, at least one the 3rd magnetic insulation layer and one the 3rd free layer, the 3rd free layer is arranged on the superiors, this at least one the 3rd magnetic insulation layer is arranged between this at least one the 3rd fixed bed, and between the superiors of this at least one the 3rd fixed bed and the 3rd free layer, wherein the direction of magnetization of this at least one the 3rd fixed bed is a third direction or to be 180 degree reverse with this third direction, this third direction is all vertical with this first direction and this second direction, the spontaneous magnetization direction of the 3rd free layer is this first direction, this second direction or be 0 to 180 degree with this third direction and tilt, the magnetic resistance value of the 3rd free layer is an intermediate value in the spontaneous direction of the 3rd free layer, when being subject to this external magnetic field, magnetic resistance value can become large or diminish, thereby measure this magnetic field at the component of this third direction, and

One circuit, be connected with this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, to this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, provide curtage, wherein this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor are arranged at same plane.

2. three-dimensional planar Magnetic Sensor as claimed in claim 1, is characterized in that, for this third direction or complete and this third direction, to be 180 degree reverse entirely for the direction of magnetization of this at least one the 3rd fixed bed.

3. three-dimensional planar Magnetic Sensor as claimed in claim 1, it is characterized in that, the direction of magnetization of the 3rd fixed bed on the 3rd magnetic insulation layer is this third direction, and that the direction of magnetization of the 3rd fixed bed under the 3rd magnetic insulation layer and this third direction are 180 degree is reverse.

4. three-dimensional planar Magnetic Sensor as claimed in claim 1, it is characterized in that, this first Magnetic Sensor comprises at least one the first fixed bed, at least one the first magnetic insulation layer and one first free layer, this first free layer is arranged on the superiors, this at least one first magnetic insulation layer is arranged between this at least one first fixed bed, and between the superiors of this at least one the first fixed bed and this first free layer, wherein to be 180 degree reverse for this first direction or with this first direction for the direction of magnetization of this at least one the first fixed bed, the spontaneous magnetization direction of this first free layer is this first direction, the magnetic resistance value of this first free layer is minimum value when this first direction, when being subject to this external magnetic field, it is large that magnetic resistance value becomes, thereby this outside magnetic force of amount side is at the component of this first direction, this second Magnetic Sensor comprises at least one the second fixed bed, at least one the second magnetic insulation layer and one second free layer, this second free layer is arranged on the superiors, this at least one second magnetic insulation layer is arranged between this at least one second fixed bed, and between the superiors of this at least one the second fixed bed and this second free layer, wherein to be 180 degree reverse for this second direction or with this second direction for the direction of magnetization of this at least one the second fixed bed, the spontaneous magnetization direction of this second free layer is this second direction, the magnetic resistance value of this second free layer is minimum value when this second direction, when being subject to this external magnetic field, it is large that magnetic resistance value becomes, thereby this outside magnetic force of amount side is at the component of this second direction.

5. three-dimensional planar Magnetic Sensor as claimed in claim 4, is characterized in that, for this first direction or complete and this first direction, to be 180 degree reverse entirely for the direction of magnetization of this at least one the first fixed bed.

6. three-dimensional planar Magnetic Sensor as claimed in claim 4, is characterized in that, for this second direction or complete and this second direction, to be 180 degree reverse entirely for the direction of magnetization of this at least one the second fixed bed.

7. three-dimensional planar Magnetic Sensor as claimed in claim 4, it is characterized in that, the direction of magnetization of this first fixed bed on this first magnetic insulation layer is this first direction, and that the direction of magnetization of this first fixed bed under this first magnetic insulation layer and this first direction are 180 degree is reverse.

8. three-dimensional planar Magnetic Sensor as claimed in claim 4, it is characterized in that, the direction of magnetization of this second fixed bed on this second magnetic insulation layer is this second direction, and that the direction of magnetization of this second fixed bed under this second magnetic insulation layer and this second direction are 180 degree is reverse.

9. three-dimensional planar Magnetic Sensor as claimed in claim 4, it is characterized in that, when this circuit provides electric current or during voltage, this electric current, by this this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor, is measured the magnetic resistance change rate of this first Magnetic Sensor, this second Magnetic Sensor and the 3rd Magnetic Sensor.

10. three-dimensional planar Magnetic Sensor as claimed in claim 1, is characterized in that, the 3rd magnetic insulation layer is made by a solenoid isolation body, this solenoid isolation body comprise magnesium oxide, aluminium oxide, tantalum oxide, silicon dioxide at least one of them.

11. Three-Dimensional Magnetic sensors as claimed in claim 1, is characterized in that, the material of the 3rd fixed bed is for being iron, cobalt, nickel, ferro-cobalt boron alloy, mD ₀19 cobalt-platinum alloys, L1 ₀iron palldium alloy, L1 ₀cobalt-platinum alloy, L1 ₁-cobalt-platinum alloy, L1 ₀ferroplatinum, cobalt/platinum Multilayer stack structure, cobalt/palladium Multilayer stack structure, nickel/palladium Multilayer stack structure, nickel/platinum Multilayer stack structure, ferro-cobalt boron alloy/platinum Multilayer stack structure, ferro-cobalt boron alloy/palladium Multilayer stack structure, Rhometal/platinum Multilayer stack structure, Rhometal/palladium Multilayer stack structure, ferro-cobalt/platinum Multilayer stack structure, ferro-cobalt/palladium Multilayer stack structure, etc. ferromagnetic alloy or etc. ferromagnetic alloy multilayer film at least one of them, the material of the 3rd free layer is iron, cobalt, nickel, ferro-cobalt boron alloy, mD ₀19 cobalt-platinum alloys, L1 ₀cobalt-platinum alloy, L1 ₁-cobalt-platinum alloy, L1 ₀ferroplatinum, L1 ₀iron palldium alloy, cobalt/platinum Multilayer stack structure, cobalt/palladium Multilayer stack structure, nickel/palladium Multilayer stack structure, nickel/platinum Multilayer stack structure, ferro-cobalt boron alloy/platinum Multilayer stack structure, ferro-cobalt boron alloy/palladium Multilayer stack structure, Rhometal/platinum Multilayer stack structure, Rhometal/palladium Multilayer stack structure, ferro-cobalt/platinum Multilayer stack structure, ferro-cobalt/palladium Multilayer stack structure, etc. ferromagnetic alloy or etc. ferromagnetic alloy multilayer film at least one of them.

12. Three-Dimensional Magnetic sensors as claimed in claim 4, is characterized in that, the material of the material of this first fixed bed and this second fixed bed is iron, cobalt, nickel, ferro-cobalt boron alloy, Rhometal, ferro-cobalt, centroid structure-cobalt-platinum alloy, L1 ₀cobalt-platinum alloy, L1 ₁cobalt-platinum alloy, centroid structure-ferroplatinum, L1 ₀ferroplatinum, and etc. ferromagnetic alloy at least one of them, the material of this first free layer for and the material of this second free layer be iron, cobalt, nickel, ferro-cobalt boron alloy, Rhometal, ferro-cobalt, cobalt-nickel alloy and etc. ferromagnetic alloy at least one of them.

13. three-dimensional planar Magnetic Sensors as claimed in claim 4, it is characterized in that, this the first magnetic insulation layer and this second magnetic insulation layer are made by a nonmagnetic metal or a solenoid isolation body, wherein this this nonmagnetic metal comprise ruthenium, tantalum, chromium, titanium, copper, palladium, molybdenum and niobium at least one of them, this solenoid isolation body comprise magnesium oxide, aluminium oxide, tantalum oxide, silicon dioxide at least one of them.

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