CN103531693B - A kind of preparation method of the COB area light source of big lighting angle - Google Patents
A kind of preparation method of the COB area light source of big lighting angle Download PDFInfo
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- 239000003063 flame retardant Substances 0.000 claims abstract description 11
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- 229910052582 BN Inorganic materials 0.000 description 1
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 229910052745 lead Inorganic materials 0.000 description 1
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- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
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- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明公开了一种大发光角度的COB面光源的制备方法,包括以下步骤:将LED芯片与基板电连接,对基板预热,再将LED用有机硅树脂封装料与黄色荧光粉混合,然后将混合材料用真空点胶点在预热的基板上,经加热固化后,形成大发光角度的COB面光源,LED用有机硅树脂封装料由以下质量百分数40~75%的乙烯基硅油、15~45%的含氢硅油、0.1~0.5%的铂催化剂、1~10%的抑制剂、1~15%的增粘剂、1~10%的导热填料以及1~10%阻燃填料制成。本发明方法,采用特定的封装料,通过真空点胶即可形成特定形状的封装体,不会出现塌陷等情形,在保证优异力学性能的前提下,赋予良好的导热性和阻燃性。
The invention discloses a method for preparing a COB surface light source with a large luminous angle, which comprises the following steps: electrically connecting an LED chip with a substrate, preheating the substrate, mixing an organic silicon resin encapsulating material for the LED with a yellow fluorescent powder, and then Put the mixed material on the preheated substrate by vacuum dispensing, and after heating and curing, a COB surface light source with a large luminous angle is formed. The silicone resin encapsulation material for LED consists of the following vinyl silicone oil with a mass percentage of 40-75%, 15 ~45% hydrogen-containing silicone oil, 0.1~0.5% platinum catalyst, 1~10% inhibitor, 1~15% tackifier, 1~10% thermal conductive filler and 1~10% flame retardant filler . The method of the present invention adopts a specific encapsulation material and can form a package body of a specific shape by vacuum dispensing without collapse and the like, and endows good thermal conductivity and flame retardancy under the premise of ensuring excellent mechanical properties.
Description
技术领域technical field
本发明涉及LED光源的制备领域,具体涉及一种大发光角度的COB面光源的制备方法。The invention relates to the field of preparation of LED light sources, in particular to a preparation method of a COB surface light source with a large luminous angle.
背景技术Background technique
半导体发光二极管(LED)是一种能够将电能转化为可见光的半导体,它改变了白炽灯钨丝发光与节能灯三基色粉发光的原理,而采用电场发光,LED的优点非常明显,具有寿命长、光效高、无辐射与低功耗等优点。LED已开始被广泛应用于户外照明、景观亮化、农业照明等领域。Semiconductor light-emitting diode (LED) is a semiconductor that can convert electrical energy into visible light. It has changed the principle of incandescent lamp tungsten light emission and energy-saving lamp three-based toner light emission, and the use of electric field light emission, the advantages of LED are very obvious, with long life , high light efficiency, no radiation and low power consumption. LED has begun to be widely used in outdoor lighting, landscape lighting, agricultural lighting and other fields.
LED作为第四代照明光源,由于具有节能环保、寿命长、体积小等无可比拟优势而成为新型的绿色光源,被认为是传统光源的理想替代品,已成为21世纪最具发展前景的领域之一。As the fourth-generation lighting source, LED has become a new type of green light source due to its incomparable advantages of energy saving, environmental protection, long life, and small size. It is considered to be an ideal substitute for traditional light sources and has become the most promising field in the 21st century. one.
目前LED的封装一般采用平面封装和模顶封装。平面封装主要包括贴片和集成。平面封装方式操作简单普及率较高,但在有效发光效率和光通量方面不如硅胶透镜封装方式;并且一般贴片LED系列的发光角度为110至120度之间,这样会在侧面及后面形成一定的暗区,一定程度上会影响整体灯光效果及环境美观度。而模顶封装则是利用硅胶加注在半球形模具内,然后加热固化后再脱模形成半球形透镜,可以满足出光角度大的要求,但是该工艺操作繁琐、设备投资大、一般的封装企业很难承受。At present, the packaging of LEDs generally adopts planar packaging and mold top packaging. Planar packaging mainly includes patch and integration. The planar packaging method is easy to operate and has a high popularity rate, but it is not as good as the silicone lens packaging method in terms of effective luminous efficiency and luminous flux; and the light-emitting angle of the general SMD LED series is between 110 and 120 degrees, which will form a certain angle on the side and the back. Dark areas will affect the overall lighting effect and environmental aesthetics to a certain extent. Mold-top packaging uses silica gel to fill the hemispherical mold, and then heats and solidifies it to form a hemispherical lens. It's hard to bear.
申请公布号为CN 103183963A的中国发明专利申请公开了一种LED用有机硅树脂封装料,包括:10~90重量份硅树脂A,每分子至少含有与硅直接连接的链烯基、苯基和羟基;10~90重量份硅树脂B,它是硅树脂A在碱或其水溶液催化下,进一步发生缩合反应得到的产物,每分子至少含有与硅直接连接的链烯烃和苯基;5~50重量份的聚硅氧烷C,每分子至少含有与硅直接连接的氢和苯基;0.01~0.5重量份的铂催化剂D;0.01~0.5重量份的抑制剂E。虽然该封装料的粘度可以灵活调控,固化后结构均一性好、应力小、力学性能优异,但是其在点胶工艺中,难以形成特定形状的封装体,其力学性能有待进一步提高。The Chinese invention patent application with the application publication number CN 103183963A discloses a silicone resin encapsulant for LEDs, comprising: 10 to 90 parts by weight of silicone resin A, each molecule containing at least alkenyl, phenyl and Hydroxyl; 10-90 parts by weight of silicone resin B, which is the product obtained by further condensation reaction of silicone resin A under the catalysis of alkali or its aqueous solution, and each molecule contains at least alkene and phenyl directly connected with silicon; 5-50 Parts by weight of polysiloxane C, each molecule contains at least hydrogen and phenyl groups directly connected to silicon; 0.01-0.5 parts by weight of platinum catalyst D; 0.01-0.5 parts by weight of inhibitor E. Although the viscosity of the encapsulant can be flexibly adjusted, the cured structure has good uniformity, small stress, and excellent mechanical properties, but it is difficult to form a package with a specific shape in the dispensing process, and its mechanical properties need to be further improved.
申请公布号为CN 101935455A的中国发明专利申请公开了一种LED封装用有机硅材料及其制备方法,由A组分和B组分按照质量比0.3:1~1:30混合,然后加入D组分、E组分和C组分,混合均匀后制备而成;所述的A组分为乙烯基聚硅氧烷,所述的B组分为含氢聚硅氧烷,所述的C组分为铂络合物和抑制剂的混合物,C组分的用量按铂络合物的用量是铂金属元素质量为1~60ppm,且抑制剂与铂原子的摩尔比为2~150:1。所述的D组分为(Me3SiO)e(MeViSiO)fSiO2的乙烯基MQ树脂,所述的E组分是正硅酸乙酯、乙烯基三甲氧基硅烷、硼酸正丁酯、硼酸异丙酯、异辛酸钛、钛酸正丁酯等中的一种或几种。该LED封装用有机硅材料的强度和硬度虽然可以通过添加D组分(用于增加封装材料的机械强度和硬度)和E组分(用于增加封装材料与LED封装支架的粘结力)进行调节,但是,在点胶工艺中,难以形成特定形状的封装体,容易出现塌陷等情形。The Chinese invention patent application with the application publication number CN 101935455A discloses a silicone material for LED packaging and its preparation method. Component A and component B are mixed at a mass ratio of 0.3:1 to 1:30, and then added to component D Components, E component and C component, prepared by mixing uniformly; the A component is vinyl polysiloxane, the B component is hydrogen-containing polysiloxane, and the C component Divided into a mixture of platinum complexes and inhibitors, the amount of component C used according to the amount of platinum complexes is that the mass of platinum metal element is 1-60ppm, and the molar ratio of inhibitors to platinum atoms is 2-150:1. The D component is vinyl MQ resin of (Me 3 SiO) e (MeViSiO) f SiO 2 , and the E component is ethyl orthosilicate, vinyl trimethoxysilane, n-butyl borate, boric acid One or more of isopropyl ester, titanium isooctanoate, n-butyl titanate, etc. The strength and hardness of the silicone material for LED packaging can be improved by adding D component (for increasing the mechanical strength and hardness of the packaging material) and E component (for increasing the bonding force between the packaging material and the LED package bracket). However, in the dispensing process, it is difficult to form a package with a specific shape, and it is prone to collapse and the like.
发明内容Contents of the invention
本发明提供了一种大发光角度的COB面光源的制备方法,采用特定的LED用有机硅树脂封装料,通过真空点胶即可形成特定形状的封装体,不会出现塌陷等情形。The invention provides a method for preparing a COB surface light source with a large luminous angle, using a specific silicone resin packaging material for LEDs, and vacuum dispensing to form a package with a specific shape without collapse.
一种大发光角度的COB(Chip On Board,板上芯片)面光源,采用呈截面球体的封装体,能够增大发光角度并提高出射光的均匀性。A COB (Chip On Board, Chip On Board) surface light source with a large luminous angle adopts a package with a spherical cross section, which can increase the luminous angle and improve the uniformity of the emitted light.
一种大发光角度的COB面光源,包括基板、设置在所述基板上的LED芯片以及用于将LED芯片封装在所述基板上的封装体,所述封装体呈截面球体,所述截面球体的截面与所述基板紧贴并与所述基板固定。A COB surface light source with a large luminous angle, comprising a substrate, an LED chip arranged on the substrate, and a package body for packaging the LED chip on the substrate, the package body is in the form of a cross-sectional sphere, and the cross-sectional sphere The cross-section is in close contact with the substrate and fixed with the substrate.
本发明中,采用截面球体的封装体,使得LED芯片发出的光经封装体出光后,发光角度较大,并且,出射光的均匀性也较好。In the present invention, the packaging body with a cross-section spherical body is adopted, so that the light emitted by the LED chip has a relatively large luminous angle after being emitted from the packaging body, and the uniformity of the emitted light is also good.
为了提高封装体与基板之间的附着力,提高使用的稳定性,作为优选,所述截面球体的截面半径为球体半径的0.5~1倍,截面半径相对较大,即所述截面球体与所述基板紧贴固定的面较大,增大了支撑稳固面。进一步优选,所述截面球体的截面半径为球体半径的0.8~1倍,在保证较大发光角度的同时,提高出射光的均匀性。In order to improve the adhesion between the package and the substrate and improve the stability of use, as a preference, the cross-sectional radius of the cross-sectional sphere is 0.5 to 1 times the radius of the sphere, and the cross-sectional radius is relatively large, that is, the cross-sectional sphere and the cross-sectional sphere The above-mentioned base plate is close to and fixed with a larger surface, which increases the supporting and stable surface. Further preferably, the sectional radius of the cross-sectional sphere is 0.8 to 1 times the radius of the sphere, so as to ensure a relatively large light-emitting angle and improve the uniformity of outgoing light.
进一步优选,所述截面球体的体积小于等于所述截面球体的截去部分的体积,即所述截面球体的截面为最大面,在保证密封性和使用方便性的同时,该结构可以通过点胶工艺实现,易于实施。Further preferably, the volume of the cross-sectional sphere is less than or equal to the volume of the truncated part of the cross-sectional sphere, that is, the cross-section of the cross-sectional sphere is the largest surface. While ensuring sealing and ease of use, this structure can be dispensing Process realization, easy to implement.
所述基板可以为透明或不透明材料,作为优选,所述的基板为玻璃基板、陶瓷基板或者塑料基板,上述的基板均能很好地符合使用要求。进一步优选,所述的基板为陶瓷基板,陶瓷基板具有更好好的导热性和耐温性。The substrate can be a transparent or opaque material, preferably, the substrate is a glass substrate, a ceramic substrate or a plastic substrate, all of which can well meet the requirements of use. Further preferably, the substrate is a ceramic substrate, which has better thermal conductivity and temperature resistance.
所述基板上设有可焊接的电极,电极一端与LED芯片连接,另一端用于与外界电路连接。所述电极材质为金、银、镍、铝、锡或其合金。The substrate is provided with a solderable electrode, one end of the electrode is connected to the LED chip, and the other end is used to connect to an external circuit. The electrode material is gold, silver, nickel, aluminum, tin or alloys thereof.
所述LED芯片为多个,多个LED芯片形成LED芯片阵列,能够提高大发光角度的COB面光源的发光强度以及提高光照均匀度。There are a plurality of LED chips, and the plurality of LED chips form an LED chip array, which can increase the luminous intensity of the COB surface light source with a large luminous angle and improve the uniformity of illumination.
所述LED芯片阵列中的各个LED芯片采用串联或/和并联的方式连接,一般在LED芯片阵列中采用串联和并联方式并用,即每个支路串联有一定数量的LED芯片,再将这些支路并联在一起形成LED芯片阵列。并联在一起的支路之间,如果某一支路不工作,不会影响其他支路,如果某一支路中的某一个LED芯片不工作,会导致该支路无法正常工作,但是不会影响其他支路,从而保证了大发光角度的COB面光源的正常使用。Each LED chip in the LED chip array is connected in series or/and in parallel. Generally, in the LED chip array, both series and parallel are used, that is, each branch has a certain number of LED chips in series, and then these branch The circuits are connected in parallel to form an LED chip array. Between the branches connected in parallel, if a certain branch does not work, it will not affect other branches. If a certain LED chip in a certain branch does not work, it will cause the branch to not work normally, but it will not It affects other branches, thus ensuring the normal use of the COB surface light source with a large luminous angle.
所述的封装体由黄色荧光粉和LED用有机硅树脂封装料制成,黄色荧光粉与LED用有机硅树脂封装料的质量比为0.1~1:100。The packaging body is made of yellow fluorescent powder and silicone resin packaging material for LEDs, and the mass ratio of the yellow fluorescent powder to the silicone resin packaging material for LEDs is 0.1-1:100.
黄色荧光粉为铈掺杂钇铝石榴石黄色荧光粉,即YAG:Ce3+黄色荧光粉,能被405nm~510nm蓝光有效激发,发出高效的可见光,物理化学性能很稳定。铈掺杂钇铝石榴石黄色荧光粉,可采用现有技术制备,具体可参照文献“铈掺杂钇铝石榴石荧光粉的湿化学法制备与表征”(郭瑞,厦门大学,发表时间为2008年05月01日,硕士论文),可采用高温固相反应法、溶胶-凝胶法、喷雾热解法、共沉淀法、分步沉淀法、均匀沉淀法、燃烧合成法等。优选采用共沉淀法制备铈掺杂钇铝石榴石黄色荧光粉(Y2.94Al5O12:0.06Ce3 +),即Ce3+浓度为0.06,具有较好的发光强度。The yellow phosphor is cerium-doped yttrium aluminum garnet yellow phosphor, that is, YAG:Ce 3+ yellow phosphor, which can be effectively excited by 405nm-510nm blue light, emits efficient visible light, and has stable physical and chemical properties. Cerium-doped yttrium-aluminum-garnet yellow phosphor can be prepared using existing technologies. For details, please refer to the literature "Wet chemical preparation and characterization of cerium-doped yttrium-aluminum garnet phosphor" (Guo Rui, Xiamen University, published on May 01, 2008, master's thesis), high-temperature solid-state reaction method, sol-gel method, spray pyrolysis method, co-precipitation method, step-by-step precipitation method, uniform precipitation method, combustion synthesis method, etc. can be used. Preferably, the co-precipitation method is used to prepare the cerium-doped yttrium aluminum garnet yellow phosphor (Y 2.94 Al 5 O 12 :0.06Ce 3 + ), that is, the Ce 3+ concentration is 0.06, which has good luminous intensity.
一种大发光角度的COB面光源的制备方法,包括以下步骤:A method for preparing a COB surface light source with a large luminous angle, comprising the following steps:
将LED芯片与基板电连接,对基板预热,再将LED用有机硅树脂封装料与黄色荧光粉混合,然后将混合材料用真空点胶点在预热的基板上,经加热固化后,形成大发光角度的COB面光源。Electrically connect the LED chip to the substrate, preheat the substrate, mix the silicone resin encapsulation material for the LED with the yellow phosphor powder, then place the mixed material on the preheated substrate by vacuum dispensing, and heat and solidify to form COB surface light source with large beam angle.
本发明还提供了一种LED用有机硅树脂封装料,在保证优异力学性能的前提下,赋予LED用有机硅树脂封装料良好的导热性和良好的阻燃性。The invention also provides an organic silicon resin encapsulation compound for LEDs, which endows the organic silicon resin encapsulation material for LEDs with good thermal conductivity and good flame retardancy under the premise of ensuring excellent mechanical properties.
一种LED用有机硅树脂封装料,由以下质量百分数的组分制成:A silicone resin encapsulant for LEDs, made of the following components in mass percentage:
作为优选,LED用有机硅树脂封装料,由以下质量百分数的组分制成:Preferably, the silicone resin encapsulant for LED is made of the following components in mass percentage:
进一步优选,LED用有机硅树脂封装料,由以下质量百分数的组分制成:Further preferably, the silicone resin encapsulant for LED is made of the following components in mass percentage:
乙烯基硅油,即聚甲基乙烯基硅氧烷,作为基础胶,由Si-O-Si主链构成,主要有:端乙烯基型硅油、侧链乙烯基型硅油和端/侧链乙烯基型硅油,具有较好的物理机械性能,主要体现在:具有很好的耐候性、耐紫外老化性能以及抗湿性,在可见光下比环氧树脂具有更好的透明性,减缓LED的光衰减,增加了光透过率,提高了发光强度和效率。Vinyl silicone oil, that is, polymethyl vinyl siloxane, as a base glue, is composed of Si-O-Si main chain, mainly including: terminal vinyl type silicone oil, side chain vinyl type silicone oil and terminal/side chain vinyl Type silicone oil has good physical and mechanical properties, mainly reflected in: good weather resistance, UV aging resistance and moisture resistance, better transparency than epoxy resin under visible light, slowing down the light attenuation of LEDs, Increased light transmittance, improved luminous intensity and efficiency.
含氢硅油,即氢基聚甲基硅氧烷,作为交联剂,可提高LED用有机硅树脂封装料的力学性能。Hydrogen-containing silicone oil, that is, hydrogen-based polymethylsiloxane, as a crosslinking agent, can improve the mechanical properties of silicone resin encapsulants for LEDs.
铂催化剂能够加速加成反应的进行,形成硅橡胶。作为优选,所述的铂催化剂为氯铂酸-二乙烯基四甲基二硅氧烷或者氯铂酸-异丙醇。Platinum catalysts can accelerate the addition reaction to form silicone rubber. Preferably, the platinum catalyst is chloroplatinic acid-divinyltetramethyldisiloxane or chloroplatinic acid-isopropanol.
抑制剂,确保加成型液体硅橡胶的存贮期和适用期,能延迟氢硅化加成反应的抑制剂,已满足生产与应用之需。抑制剂可采用现有技术,包括:1、含N、P、S的有机化合物;2、含Sn、Pb、Hg、Bi、As等的重金属粒子化合物;3、含炔基及多乙烯基的化合物等。作为优选,可选用炔基环己醇,具体可选用乙炔基环己醇。Inhibitor, to ensure the storage period and pot life of the addition-type liquid silicone rubber, and the inhibitor that can delay the addition reaction of hydrosilation, has met the needs of production and application. Inhibitors can use existing technologies, including: 1. Organic compounds containing N, P, and S; 2. Heavy metal particle compounds containing Sn, Pb, Hg, Bi, As, etc.; 3. Alkyne and polyvinyl compounds compounds etc. Preferably, alkynyl cyclohexanol can be used, specifically ethynyl cyclohexanol can be used.
增粘剂可以增加各组分之间的粘结性,使LED用有机硅树脂封装料具有良好的力学性能。作为优选,所述的增粘剂为复配增粘剂,为气相法白炭黑、γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷和甲基三甲氧基硅烷的混合物,其中,气相法白炭黑主要是起增稠、触变和控制流动性的作用,均匀分散后,白炭黑表面的活性硅羟基易与聚合物形成氢键,产生结构化效应,形成网状结构,使得体系的黏度增加。气相法白炭黑可用作补强剂,既可以提高制品的撕裂强度和耐磨性,又能使胶料的耐老化、电绝缘等性质得到明显改善。气相法白炭黑在LED用有机硅树脂封装料中还可以起到一定的导热作用。γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷和甲基三甲氧基硅烷复合在一起,残留大量的硅羟基,在硅橡胶固化时,可以使各组分更好地粘结在一起,同时,该复配增粘剂本身也是一种多支化的Si-O-Si结构,可以与阻燃填料协同起到阻碍复合材料燃烧的作用。作为优选,所述的气相法白炭黑、γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷和甲基三甲氧基硅烷的质量比为1:1:0.6~1。因此,采用气相法白炭黑、γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷和甲基三甲氧基硅烷作为增粘剂,不但能够提高材料的力学性能,还能与导热填料、阻燃填料产生协同作用,提高导热性和阻燃性。The tackifier can increase the cohesiveness between the various components, so that the silicone resin encapsulation compound for LEDs has good mechanical properties. As preferably, the tackifier is a compound tackifier, which is a combination of fumed white carbon black, γ-(2,3-glycidoxy)propyltrimethoxysilane and methyltrimethoxysilane Among them, the fumed silica mainly plays the role of thickening, thixotropy and fluidity control. After uniform dispersion, the active silicon hydroxyl groups on the surface of the silica are easy to form hydrogen bonds with the polymer, resulting in a structural effect and forming The network structure increases the viscosity of the system. Fumed silica can be used as a reinforcing agent, which can not only improve the tear strength and wear resistance of the product, but also significantly improve the aging resistance and electrical insulation properties of the rubber compound. Fumed white carbon black can also play a certain role in heat conduction in the silicone resin packaging material for LEDs. γ-(2,3-Glycidoxypropoxy)propyltrimethoxysilane and methyltrimethoxysilane are compounded together, leaving a large amount of silicon hydroxyl groups, which can make each component better when the silicone rubber is cured At the same time, the compound tackifier itself is also a multi-branched Si-O-Si structure, which can cooperate with the flame-retardant filler to hinder the combustion of the composite material. Preferably, the mass ratio of fumed silica, γ-(2,3-glycidoxy)propyltrimethoxysilane and methyltrimethoxysilane is 1:1:0.6˜1. Therefore, the use of fumed silica, γ-(2,3-glycidoxy)propyltrimethoxysilane and methyltrimethoxysilane as tackifiers can not only improve the mechanical properties of the material, but also Synergizes with thermally conductive fillers and flame retardant fillers to improve thermal conductivity and flame retardancy.
导热填料可以提高LED用有机硅树脂封装料的导热性能。导热填料为氧化硅、氧化铝(即三氧化二铝)、氧化镁、氧化锌、氧化铝、氮化硼、碳化硅等中的一种或两种以上。The thermally conductive filler can improve the thermal conductivity of the silicone resin encapsulant for LEDs. The thermally conductive filler is one or more of silicon oxide, aluminum oxide (namely aluminum oxide), magnesium oxide, zinc oxide, aluminum oxide, boron nitride, silicon carbide, etc.
阻燃填料可以提高LED用有机硅树脂封装料的阻燃性能。作为优选,所述阻燃填料为氢氧化铝、氢氧化镁、硼酸锌等中的一种,不仅能阻燃,而且可以发烟、不产生滴下物、不产生毒气。Flame retardant fillers can improve the flame retardant properties of silicone resin packaging materials for LEDs. Preferably, the flame retardant filler is one of aluminum hydroxide, magnesium hydroxide, zinc borate, etc., which can not only be flame retardant, but also produce smoke, no dripping, and no poisonous gas.
本发明中,通过各组分的复配,赋予本发明LED用有机硅树脂封装料良好的导热性和阻燃性,同时,还能够使得本发明LED用有机硅树脂封装料具有优异的力学性能。In the present invention, through the compounding of various components, the silicone resin encapsulating compound for LEDs of the present invention is endowed with good thermal conductivity and flame retardancy, and at the same time, the organosilicon resin encapsulating compound for LEDs of the present invention can also have excellent mechanical properties .
所述的LED用有机硅树脂封装料的制备方法,包括以下步骤:The preparation method of described LED encapsulation compound with silicone resin, comprises the following steps:
在乙烯基硅油中加入导热填料、阻燃填料和增粘剂,混合均匀后,再加入含氢硅油和抑制剂,最后加入铂催化剂,经混合均匀,抽真空脱泡,得到LED用有机硅树脂封装料。Add thermal conductive filler, flame retardant filler and tackifier to vinyl silicone oil, mix evenly, then add hydrogen-containing silicone oil and inhibitor, and finally add platinum catalyst, mix evenly, vacuumize and defoam to get silicone resin for LED Packaging material.
制备的LED用有机硅树脂封装料需要马上进行使用。The prepared silicone resin encapsulation material for LED needs to be used immediately.
与现有技术相比,本发明具有如下优点:Compared with prior art, the present invention has following advantage:
大发光角度的COB面光源,采用呈截面球体的封装体,使得LED芯片发出的光经封装体出光后,发光角度较大,并且,出射光的均匀性也较好。大发光角度的COB面光源结构简单,生产成本低,易于市场化推广应用,具有广阔的应用前景。The COB surface light source with a large luminous angle adopts a package with a spherical cross section, so that the light emitted by the LED chip has a larger luminous angle after passing through the package, and the uniformity of the emitted light is also better. The COB surface light source with a large luminous angle has a simple structure, low production cost, easy market promotion and application, and has broad application prospects.
本发明大发光角度的COB面光源的制备方法,采用特定的LED用有机硅树脂封装料,通过真空点胶即可形成特定形状的封装体,不会出现塌陷等情形。LED用有机硅树脂封装料,在保证优异力学性能的前提下,赋予LED用有机硅树脂封装料良好的导热性和良好的阻燃性。The preparation method of the COB surface light source with a large luminous angle of the present invention adopts a specific silicone resin encapsulation material for LEDs, and can form an encapsulation body of a specific shape through vacuum dispensing without collapse. The silicone resin encapsulant for LED, on the premise of ensuring excellent mechanical properties, endows the silicone resin encapsulant for LED with good thermal conductivity and good flame retardancy.
附图说明Description of drawings
图1为大发光角度的COB面光源(单个)的结构示意图;Figure 1 is a schematic diagram of the structure of a COB surface light source (single) with a large luminous angle;
图2为大发光角度的COB面光源(LED芯片阵列)的结构示意图。Figure 2 is a schematic diagram of the structure of a COB surface light source (LED chip array) with a large light-emitting angle.
具体实施方式detailed description
如图1和图2所示,为大发光角度的COB面光源(单个)以及(LED芯片阵列),包括基板1、设置在基板1上的LED芯片以及用于将LED芯片封装在基板1上的封装体2,封装体2呈截面球体,截面球体2的截面与基板1紧贴并与基板1固定。截面球体2的截面半径可为球体半径的0.5~1倍,进一步可为球体半径的0.8~1倍,图1和图2中,截面球体2为半球体,即截面球体2的截面半径为球体半径的1倍。截面球体2的体积等于截面球体2的截去部分的体积。基板1为玻璃基板、陶瓷基板或者塑料基板。图1中具体选用陶瓷基板。基板1上设有可焊接的电极,电极一端与LED芯片连接,另一端用于与外界电路连接。图2中LED芯片为多个,即封装体2也为多个,多个LED芯片形成LED芯片阵列,LED芯片阵列中的各个LED芯片采用串联或/和并联的方式连接。As shown in Figure 1 and Figure 2, it is a COB surface light source (single) and (LED chip array) with a large light emitting angle, including a substrate 1, an LED chip arranged on the substrate 1, and a package for LED chips on the substrate 1 The package body 2 is in the shape of a sphere with a cross section, and the section of the sphere 2 is in close contact with the substrate 1 and fixed with the substrate 1 . The cross-section radius of the cross-section sphere 2 can be 0.5 to 1 times the radius of the sphere, and further can be 0.8 to 1 times the radius of the sphere. In Figures 1 and 2, the cross-section sphere 2 is a hemisphere, that is, the cross-section radius of the cross-section sphere 2 is a sphere 1 times the radius. The volume of the sectional sphere 2 is equal to the volume of the truncated portion of the sectional sphere 2 . The substrate 1 is a glass substrate, a ceramic substrate or a plastic substrate. In Fig. 1, a ceramic substrate is specifically selected. Solderable electrodes are provided on the substrate 1, one end of the electrode is connected to the LED chip, and the other end is used to connect to an external circuit. In Fig. 2, there are multiple LED chips, that is, there are also multiple package bodies 2, and the multiple LED chips form an LED chip array, and each LED chip in the LED chip array is connected in series or/and in parallel.
实施例1Example 1
大发光角度的COB面光源的制备方法,包括以下步骤:A method for preparing a COB surface light source with a large luminous angle, comprising the following steps:
将LED芯片(蓝光LED芯片,德国Aixtron公司,Si衬底GaN基蓝光LED芯片,1w)与基板1上的电极电连接,并将基板1预热,向乙烯基硅油中加入γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷、甲基三甲氧基硅烷、气相法白炭黑、三氧化二铝和氢氧化铝,经分散机搅拌、抽真空脱泡以及静置3h后,再加入含氢硅油和乙炔基环己醇混合均匀,最后加入氯铂酸-二乙烯基四甲基二硅氧烷和铈掺杂钇铝石榴石黄色荧光粉(Y2.94Al5O12:0.06Ce3+),搅拌均匀后进行真空脱泡,然后将混合材料用真空点胶机点在预热的基板1上,形成特定形状的封装体,再在100℃固化1h和150℃固化30min次序连续加热固化,形成大发光角度的COB面光源。封装体2的半径为0.9cm。其他同图1,即具体实施方式中的结构描述。铈掺杂钇铝石榴石黄色荧光粉与LED用有机硅树脂封装料的质量比为0.5:100。Electrically connect the LED chip (blue LED chip, Aixtron, Germany, GaN-based blue LED chip on Si substrate, 1w) to the electrodes on the substrate 1, preheat the substrate 1, and add γ-(2, 3-glycidoxy)propyltrimethoxysilane, methyltrimethoxysilane, fumed white carbon black, aluminum oxide and aluminum hydroxide, stirred by a disperser, vacuumed for defoaming and standing for 3h Finally, add hydrogen-containing silicone oil and ethynyl cyclohexanol and mix evenly, and finally add chloroplatinic acid-divinyltetramethyldisiloxane and cerium-doped yttrium aluminum garnet yellow phosphor (Y 2.94 Al 5 O 12 : 0.06Ce 3+ ), stirred evenly and vacuum degassed, then put the mixed material on the preheated substrate 1 with a vacuum dispenser to form a package with a specific shape, and then cured at 100°C for 1h and 150°C Continuous heating and curing in 30min sequence to form a COB surface light source with a large luminous angle. The package body 2 has a radius of 0.9 cm. Others are the same as in Fig. 1, that is, the structural description in the specific embodiment. The mass ratio of the cerium-doped yttrium aluminum garnet yellow phosphor powder to the silicone resin encapsulating material for LED is 0.5:100.
LED用有机硅树脂封装料,选用以下质量百分含量的原料:For the silicone resin encapsulation material for LED, the raw materials with the following mass percentages are selected:
乙烯基硅油:300mPa·s,乙烯质量百分含量为0.7%,工业级,浙江新安化工集团股份有限公司;Vinyl silicone oil: 300mPa s, 0.7% ethylene mass percentage, industrial grade, Zhejiang Xin'an Chemical Group Co., Ltd.;
含氢硅油:含氢重量百分含量0.5%,工业级,广州四海化工有限公司;Hydrogen-containing silicone oil: 0.5% hydrogen by weight, industrial grade, Guangzhou Sihai Chemical Co., Ltd.;
三氧化二铝:粒径0.5μm,工业级;Aluminum oxide: particle size 0.5μm, industrial grade;
氢氧化铝:粒径0.3μm,工业级;Aluminum hydroxide: particle size 0.3μm, industrial grade;
气相法白炭黑:沈阳化工股份有限公司。Fumed silica: Shenyang Chemical Co., Ltd.
实施例2Example 2
LED用有机硅树脂封装料选用以下质量百分含量的原料:The organic silicon resin encapsulation material for LED is selected from the following raw materials in mass percentage:
其他同实施例1。Others are the same as embodiment 1.
实施例3Example 3
LED用有机硅树脂封装料选用以下质量百分含量的原料:The organic silicon resin encapsulation material for LED is selected from the following raw materials in mass percentage:
其他同实施例1。Others are the same as embodiment 1.
实施例4Example 4
LED用有机硅树脂封装料选用以下质量百分含量的原料:The organic silicon resin encapsulation material for LED is selected from the following raw materials in mass percentage:
其他同实施例1。Others are the same as embodiment 1.
实施例5Example 5
LED用有机硅树脂封装料,选用以下质量百分含量的原料:For the silicone resin encapsulation material for LED, the raw materials with the following mass percentages are selected:
其他同实施例1。Others are the same as embodiment 1.
对比例1Comparative example 1
LED用有机硅树脂封装料,选用以下质量百分含量的原料:For the silicone resin encapsulation material for LED, the raw materials with the following mass percentages are selected:
其他同实施例1。Others are the same as embodiment 1.
对比例2Comparative example 2
LED用有机硅树脂封装料,选用以下质量百分含量的原料:For the silicone resin encapsulation material for LED, the raw materials with the following mass percentages are selected:
其他同实施例1。Others are the same as embodiment 1.
拉伸强度和断裂伸长率:按GB/T 528-2009用电子万能试验机测定;剪切强度:按GB/T 13936-1992用电子万能试验机测定。Tensile strength and elongation at break: measured by electronic universal testing machine according to GB/T 528-2009; shear strength: measured by electronic universal testing machine according to GB/T 13936-1992.
燃烧性能测试:按照GB/T 10707-2008测定垂直燃烧等级。Combustion performance test: Determine the vertical combustion rating according to GB/T 10707-2008.
导热率测试:按GB/T 11205-1989测定,将混合材料用真空点胶机点在平板上形成150mm×150mm×3mm的试样,在热面加入稳定的热面温度,热量通过试样传递到冷面,测量传递的热流,再根据试样的厚度和传热面积计算热导率。Thermal conductivity test: Measured according to GB/T 11205-1989, point the mixed material on the plate with a vacuum dispenser to form a sample of 150mm×150mm×3mm, add a stable temperature on the hot surface, and the heat will be transferred through the sample To the cold surface, measure the heat flow transferred, and then calculate the thermal conductivity based on the thickness of the sample and the heat transfer area.
λ=(Q·L)/[A·(Ta-Td)]λ=(Q·L)/[A·(Ta-Td)]
λ:材料的热导率,W·m-1·K-1;Q:热流,W;A:试样截面积,m2;L∶试样厚度,m;Ta:试样热面温度,K;Td:试样冷面温度,K。λ: thermal conductivity of the material, W m -1 K -1 ; Q: heat flow, W; A: cross-sectional area of the sample, m 2 ; L: thickness of the sample, m; Ta: temperature of the hot surface of the sample, K; Td: temperature of the cold surface of the sample, K.
实施例1~5的大发光角度的COB面光源上的封装体其测试结果如表1所示。根据实施例1~5的大发光角度的COB面光源的发光曲线可知,实施例1~5的大发光角度的COB面光源的平均光束角(50%)分别为176.2度、175.6度、175.8度、175.5度以及172.1度,其发光角度较大。Table 1 shows the test results of the packages on the COB surface light sources with large light emitting angles in Examples 1-5. According to the emission curves of COB surface light sources with large emission angles in Examples 1 to 5, the average beam angles (50%) of the COB surface light sources with large emission angles in Examples 1 to 5 are 176.2 degrees, 175.6 degrees, and 175.8 degrees, respectively. , 175.5 degrees and 172.1 degrees, the light angle is larger.
表1Table 1
从表1可知,实施例1~5的大发光角度的COB面光源上的封装体具有良好的导热性以及阻燃性,最重要的是,还能保证材料具有优异的力学性能。It can be seen from Table 1 that the packages on the COB surface light sources with large light emitting angles in Examples 1-5 have good thermal conductivity and flame retardancy, and most importantly, they can also ensure that the materials have excellent mechanical properties.
从实施例1与实施例5相比,采用的增粘剂不同,采用气相法白炭黑、γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷和甲基三甲氧基硅烷的混合物作为增粘剂,不但可以提高材料的力学性能,还可以协同氢氧化铝和三氧化二铝提高材料的阻燃性能和导热性。Compared with Example 5, the tackifiers used in Example 1 are different, and fumed white carbon black, γ-(2,3-glycidoxy) propyltrimethoxysilane and methyltrimethoxysilane are used. The mixture of silane as a tackifier can not only improve the mechanical properties of the material, but also cooperate with aluminum hydroxide and aluminum oxide to improve the flame retardancy and thermal conductivity of the material.
从实施例1与对比例1可知,在不添加阻燃填料氢氧化铝,只添加导热填料三氧化二铝,三氧化二铝的添加量较多,导热性和力学性能虽然有一定的下降,但是整体表现相对还可以,三氧化二铝能够与增粘剂中的成分协同提高导热性,导热性较好,其燃烧等级UL-94就较差,为HB,这主要是基于乙烯基硅油与含氢硅油加成的硅胶材料结构的性能。From Example 1 and Comparative Example 1, it can be seen that without adding the flame-retardant filler aluminum hydroxide, only adding the thermally conductive filler Al2O3, the addition of Al2O3 is more, although the thermal conductivity and mechanical properties have a certain decline, But the overall performance is relatively good. Al2O3 can cooperate with the ingredients in the tackifier to improve thermal conductivity, and the thermal conductivity is good. Its combustion rating is UL-94, which is HB. This is mainly based on vinyl silicone oil and Properties of silicone material structure containing hydrogen silicone oil addition.
从实施例1与对比例2可知,在不添加导热填料三氧化二铝,只添加阻燃填料氢氧化铝,氢氧化铝能够与增粘剂中的成分协同提高阻燃性,使其具有V-0燃烧等级,但是由于没有添加导热填料三氧化二铝,其导热性较差。From Example 1 and Comparative Example 2, it can be seen that without adding the thermally conductive filler aluminum oxide, only adding the flame retardant filler aluminum hydroxide, the aluminum hydroxide can synergistically improve the flame retardancy with the components in the tackifier, making it have V -0 combustion rating, but because there is no thermal conductivity filler aluminum oxide, its thermal conductivity is poor.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101935455A (en) * | 2010-07-28 | 2011-01-05 | 杭州师范大学 | A kind of organosilicon material for LED encapsulation and preparation method thereof |
CN102391651A (en) * | 2011-10-09 | 2012-03-28 | 常熟市广大电器有限公司 | Formula of organic silicon rubber for light-emitting diode (LED) chip packaging |
CN102522398A (en) * | 2011-12-31 | 2012-06-27 | 苏州玄照光电有限公司 | COB (Chip On Board) integrated-packaged LED (Light-Emitting Diode) with high color-rendering index and high reliability |
CN103078049A (en) * | 2013-02-07 | 2013-05-01 | 张刚维 | COB (chip on board) packaged LED (light emitting diode) light source and manufacturing method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101935455A (en) * | 2010-07-28 | 2011-01-05 | 杭州师范大学 | A kind of organosilicon material for LED encapsulation and preparation method thereof |
CN102391651A (en) * | 2011-10-09 | 2012-03-28 | 常熟市广大电器有限公司 | Formula of organic silicon rubber for light-emitting diode (LED) chip packaging |
CN102522398A (en) * | 2011-12-31 | 2012-06-27 | 苏州玄照光电有限公司 | COB (Chip On Board) integrated-packaged LED (Light-Emitting Diode) with high color-rendering index and high reliability |
CN103078049A (en) * | 2013-02-07 | 2013-05-01 | 张刚维 | COB (chip on board) packaged LED (light emitting diode) light source and manufacturing method thereof |
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