CN103531230B - A kind ofly recall container based on the floating of memristor and recall sensor simulator - Google Patents

Abstract

The invention discloses a memristor-based floating memcapacitor and memristor simulator, comprising a first differential differential current transmitter, a second differential differential current transmitter, a memristor, resistance and reactance elements, The X terminal of the first differential differential current transmitter is connected to the memristor and grounded, one input terminal of the second differential differential current transmitter is grounded, and the other input terminal is in-phase with the first differential differential current transmitter. The current output terminal is connected to one end of the reactance element, the other end of the reactance element is grounded, the X terminal of the second differential differential current transmitter is connected to the resistor and then grounded, the in-phase current output terminal of the second differential differential current transmitter, The reverse current output terminals are respectively connected to the two input terminals of the first differential differential current transmitter. The invention can effectively replace the actual memcapacitor and memometer for circuit design, has no limitation on the voltage at both ends of the memcapacitor and memron, and can be flexibly connected with other electronic components.

Description

A memristor-based floating memcontainer and memristor simulator

technical field

The invention relates to the technical field of memristors, in particular to a floating memristor and a memristor simulator based on memristors.

Background technique

Since the successful realization of memristor in Hewlett-Packard Laboratory in the United States in May 2008, memristor has been widely used in the fields of non-volatile memory, artificial neural network and circuit design. Based on the memristor, Professor Cai Shaotang proposed the concepts of memcapacitor and meminductor in December 2008. The two new memory elements have the same memory function as memristors, but memcapacitors and memristors can store energy, while memristors cannot. The emergence of these memory elements represents a whole new uncharted territory, which has the potential to lead to a series of new revolutions in the field of electronics.

As nanoelectronic components, memcapacitors, memristors, and memristors still exist only in laboratory environments. Due to the shortcomings of nanotechnology, such as difficulty in realization and high cost, it will take a long process for these memory devices to be commercialized. Therefore, constructing their analog equivalent circuits according to the actual electrical characteristics of these devices is of great significance and value for the analysis and research of circuits and systems composed of these memory elements.

So far, a large number of literatures have reported simulation models and simulators of memristors, but there are relatively few simulation models and simulators about memcapacitors and memristors.

Y.V.Pershin et al. proposed a simple variant that can convert memristors into memcapacitors and meminductors (PershinY.V, DiVentra, M.Memristivecircuitssimulatememcapzcitorandmeminductor[J].Electron.Lett.,2010,Vol.46 , No.7), but a serial parasitic resistance is included in the implemented memcapacitor and memristor, and the proposed circuit can only be grounded.

A memcapacitor analog equivalent circuit implemented by a current feedback operational amplifier (Current Feedback Operational Amplifier) can accurately simulate the typical q-u (charge-voltage) curve of a memcapacitor with contraction hysteresis characteristics (D.Biolek, VBiolkova.Mutatorfortransformingmemristorintomemcapacitor[J]. Electron.Lett., 2010, Vol.46, No.21), however, this circuit can only realize the conversion of memristors into memcapacitors, but not memristors, and this circuit can only be connected to other circuit.

Contents of the invention

In order to solve the above technical problems, the present invention provides a memristor-based floating memcapacitor and memristor simulator with simple structure and capable of realizing floating connection.

The technical solution of the present invention to solve the above problems is: a memristor-based floating memcapacitor and memristor simulator, including a first differential differential current transmitter, a second differential differential current transmitter, a memristor , resistance and reactance elements, the first differential differential current conveyor has two input terminals, an in-phase current output terminal and an X terminal, and the second differential differential current transmitter has two input terminals, an in-phase A current output terminal, a reverse current output terminal and an X terminal, the X terminal of the first differential differential current transmitter is connected to the memristor and grounded, and one of the second differential differential current transmitter The input end is grounded, the other input end is connected to the in-phase current output end of the first differential differential current transmitter, and one end of the reactance element, the other end of the reactance element is grounded, and the X end of the second differential differential current transmitter is connected to the said The resistors are connected and grounded, and the non-inverting current output terminal and the reverse current output terminal of the second differential current transmitter are respectively connected to the two input terminals of the first differential differential current transmitter.

The reactance element is inductance or capacitance.

The beneficial effect of the present invention is that: the present invention can correctly simulate the qu characteristic curve of the memory container and the The (magnetic flux-current) characteristic curve can effectively replace the actual memcapacitor and memcapacitor to carry out circuit design and related research, and the memcapacitor and memcapacitor simulator designed by the present invention are floating, and the memcapacitor There is no limit to the voltage at both ends of the sensor and the memristor, and it can be flexibly connected with other electronic components or devices.

Description of drawings

Fig. 1 is a structural schematic diagram of the present invention.

detailed description

Below in conjunction with accompanying drawing and embodiment the present invention will be further described.

As shown in Figure 1, the present invention includes a first differential differential current transmitter U1, a second differential differential current transmitter U2, a memristor M, a linear resistance R and a linear reactance element Z, the first differential differential The X terminal of the current transmitter U1 is connected to the memristor M and grounded, one input terminal Y2 of the second differential differential current transmitter U2 is grounded, and the other input terminal Y1 is connected to the first differential differential current transmitter U2. The in-phase current output terminal Z+ of U1 is connected to one end of the reactance element Z, the other end of the reactance element Z is grounded, the X end of the second differential differential current transmitter U2 is connected to the resistor R and then grounded, and the second differential The reverse current output terminal Z− and the non-inverting current output terminal Z+ of the differential current transmitter U2 are respectively connected to the two input terminals Y1 and Y2 of the first differential current transmitter U1 .

The first differential current transmitter U1 mainly implements voltage-current conversion, and the second differential differential current transmitter U2 mainly implements a current integration (or differentiation) function.

The two input terminals Y1 and Y2 of the first differential current transmitter U1 are respectively connected to the input ports A and B, and the X terminal is grounded through the memristor M. According to the port characteristics of the differential differential current conveyor:

v _X =v _Y1 -v _Y2 ,i _X =i _Z+ =-i _Z- ,i _Y =0 (1)

It can be calculated that the output current of the current output terminal Z+ of the first differential current transmitter U1 is

${\mathrm{<span\; class="notranslate">\; i</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>{\mathrm{<span\; class="notranslate">\; i</span>}}_{\mathrm{<span\; class="notranslate">\; m</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; v</span>}}_{\mathrm{<span\; class="notranslate">\; A</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; -</span>{\mathrm{<span\; class="notranslate">\; v</span>}}_{\mathrm{<span\; class="notranslate">\; B</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}{{\mathrm{<span\; class="notranslate">\; R</span>}}_{\mathrm{<span\; class="notranslate">\; m</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; )</span>$

Where R _M (t) is the memristor value corresponding to the memristor M at time t.

The input terminal Y1 of the second differential differential current transmission U2 is connected to the current output terminal Z+ of the first differential differential current transmitter U1, and the reactive element Z is connected to the ground, the input terminal Y2 is directly grounded, and the X terminal is connected to the linear resistor R grounded. The inverting current output terminal Z- and the non-inverting current output terminal Z+ are respectively connected to the input ports A and B to form a complete current path. Also according to the port characteristics of the differential differential current transmitter, it can be obtained

${\mathrm{<span\; class="notranslate">\; i</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>{\mathrm{<span\; class="notranslate">\; i</span>}}_{\mathrm{<span\; class="notranslate">\; 2</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>{\mathrm{<span\; class="notranslate">\; i</span>}}_{\mathrm{<span\; class="notranslate">\; R</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; Z</span>}}{\mathrm{<span\; class="notranslate">\; R</span>}}{\mathrm{<span\; class="notranslate">\; i</span>}}_{\mathrm{<span\; class="notranslate">\; 3</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; Z</span>}}{\mathrm{<span\; class="notranslate">\; R</span>}}\frac{{\mathrm{<span\; class="notranslate">\; v</span>}}_{\mathrm{<span\; class="notranslate">\; A</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; -</span>{\mathrm{<span\; class="notranslate">\; v</span>}}_{\mathrm{<span\; class="notranslate">\; B</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}{{\mathrm{<span\; class="notranslate">\; R</span>}}_{\mathrm{<span\; class="notranslate">\; m</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 3</span>}<span\; class="notranslate">\; )</span>$

Thus, the equivalent input impedance between the input ports A and B can be calculated as

${\mathrm{<span\; class="notranslate">\; Z</span>}}_{\mathrm{<span\; class="notranslate">\; AB</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; v</span>}}_{\mathrm{<span\; class="notranslate">\; A</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; -</span>{\mathrm{<span\; class="notranslate">\; v</span>}}_{\mathrm{<span\; class="notranslate">\; B</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}{{\mathrm{<span\; class="notranslate">\; i</span>}}_{\mathrm{<span\; class="notranslate">\; 1</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}<span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; R</span>}<span\; class="notranslate">\; \&Center\; Dot;</span>{\mathrm{<span\; class="notranslate">\; R</span>}}_{\mathrm{<span\; class="notranslate">\; m</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}{\mathrm{<span\; class="notranslate">\; Z</span>}}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 4</span>}<span\; class="notranslate">\; )</span>$

It can be seen from formula (4) that when the linear reactance element Z in Figure 1 is an inductor, the circuit can be equivalent to a memcapacitor, and its memcapacitor value can be expressed as

${\mathrm{<span\; class="notranslate">\; C</span>}}_{\mathrm{<span\; class="notranslate">\; m</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; L</span>}}{\mathrm{<span\; class="notranslate">\; R</span>}<span\; class="notranslate">\; \&Center\; Dot;</span>{\mathrm{<span\; class="notranslate">\; R</span>}}_{\mathrm{<span\; class="notranslate">\; m</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}<span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; -</span><span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; 5</span>}<span\; class="notranslate">\; )</span>$

When the linear reactance element Z in Figure 1 is a capacitor, the circuit can be equivalent to a memory sensor, and its memory value can be expressed as

L _M = R R _M (t) C (6)

In this specific embodiment, under the condition that the circuit topology remains unchanged, the electrical characteristics of the memcapacitor and the memometer can be respectively simulated by connecting reactance elements Z of different properties, and the simulator designed in the present invention is floating, and the memory There is no limit to the voltage across the container and the memristor, so it can be connected with other electronic components or devices in different forms.

Claims (2)

1. A floating memristor based on memristor and a memristor simulator, characterized in that: comprising a first differential differential current transmitter, a second differential differential current transmitter, a memristor, a resistance and a reactance element, the first differential differential current transmitter has two input terminals, an in-phase current output terminal and an X terminal, and the second differential differential current transmitter has two input terminals, a non-inverting current output terminal, A reverse current output terminal and an X terminal, the X terminal of the first differential differential current transmitter is connected to the memristor and grounded, and one input terminal of the second differential differential current transmitter is grounded, The other input terminal is connected to the same-phase current output terminal of the first differential differential current transmitter and one end of the reactance element, the other end of the reactance element is grounded, and the X terminal of the second differential differential current transmitter is connected to the resistor and then grounded , the non-inverting current output terminal and the reverse current output terminal of the second differential differential current transmitter are respectively connected to the two input terminals of the first differential differential current transmitter. 2. The memristor-based floating memcapacitor and memristor simulator according to claim 1, wherein the reactance element is an inductor or a capacitor.