CN103516328A - Strip array medium film acoustic surface wave device - Google Patents
Strip array medium film acoustic surface wave device Download PDFInfo
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- CN103516328A CN103516328A CN201310468254.1A CN201310468254A CN103516328A CN 103516328 A CN103516328 A CN 103516328A CN 201310468254 A CN201310468254 A CN 201310468254A CN 103516328 A CN103516328 A CN 103516328A
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- acoustic wave
- surface wave
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Abstract
The invention relates to a strip array medium film acoustic surface wave device. A strip-shaped medium film is overlapped on the surface of a conventional acoustic surface wave device chip. The temperature coefficient of the used medium film is opposite to the temperature coefficient of a piezoelectric base piece. The strip direction of the strip array film extends in the acoustic surface wave transmission direction. The strip space distance of the strip array film is quasi-periodicity values which have a certain rule. The strip array medium film acoustic surface wave device has the advantages that acoustic surface wave transmission is restrained, the character that the temperature of the piezoelectric base piece is compensated can be used for all acoustic surface wave devices, and performance is improved.
Description
Technical field
The present invention relates to a kind of SAW (Surface Acoustic Wave) device device, relate in particular to a kind of SAW (Surface Acoustic Wave) device of bar battle array deielectric-coating paracycle that superposes, belong to communication technical field.
Background technology
SAW (Surface Acoustic Wave) device is the base components of modern electronic technology, its (contrary) piezoelectric effect based on piezoelectric, adopt the metal electrode structure (active part) such as interdigital transducer, reflecting grating array and multistrip coupler, implement the functions such as electromechanical-electric energy conversion, generation and processing surface acoustic wave, complete signal of telecommunication resonance, filtering, time delay and processing in real time etc.
The temperature characterisitic (being generally negative temperature coefficient) of conventional piezoelectric substrate is poor, causes SAW (Surface Acoustic Wave) device to have larger temperature drift, is difficult to meet fast-developing circuit application.Temperature-compensating surface acoustic wave (TC-SAW) technology, now for meeting the new technology of the Advanced Communications System application such as 3G/LTE, the approach that mainly realizes has two: adopt the deielectric-coating such as SiO with positive temperature coefficient to cover SAW device surface, or adopt composite substrate structure.
It is existing for many years that the deielectric-coating such as SiO are applied to surface acoustic wave techniques, and as surface passivation, temperature-compensating etc., its principal character is general individual layer application, and device chip surface is covered with deielectric-coating.
The surface acoustic wave of propagating on piezoelectric substrate, can expand its wave beam gradually, and device performance is degenerated.Patent applied for " SAW (Surface Acoustic Wave) device with stack quasi-periodic structure " (patent No. 201110188728.8), its principal character is: at the chip surface of existing SAW (Surface Acoustic Wave) device, make again one deck bonding jumper paracycle battle array structure, bar battle array direction is substantially along acoustic surface wave propagation direction, and this battle array is discontinuous in the active region of device.The advantage of this patent is to form acoustic waveguide, and constraint acoustic surface wave propagation, reduces energy loss, restriction higher mode.
Summary of the invention
For solving the problems of the technologies described above, the principle based on existing deielectric-coating compensation SAW (Surface Acoustic Wave) device temperature characterisitic, and the direction of propagation that utilizes the loading effect constraint surface acoustic wave of cycle strip film, propose the present invention.
The technical solution adopted in the present invention is: the SAW (Surface Acoustic Wave) device of surface stack one deck bar paracycle battle array deielectric-coating, is characterized in that: device chip surface stack one deck bar paracycle battle array deielectric-coating, described battle array deielectric-coating is superimposed upon device electrode superstructure.
Bar battle array is to be made by its temperature coefficient deielectric-coating contrary with the temperature coefficient of piezoelectric substrate used, for example SiO
2, medium thickness is determined by compensating piezoelectric substrate temperature characterisitic.
Above-mentioned SAW (Surface Acoustic Wave) device, it is further characterized in that: the bar direction of described battle array is similar to extends along acoustic surface wave propagation direction, bar or parallel or tilt or disperse and assemble or its combination, the surface acoustic wave sound channel designing due to SAW (Surface Acoustic Wave) device generally arranges along acoustic surface wave propagation direction, require useful surface acoustic wave not depart from, so stack bar battle array structure is to be mostly parallel to the parallel strip battle array that acoustic surface wave propagation direction is extended; For the piezoelectric with non-zero degree Neng Liu angle, adopt the bar battle array structure of (nonopiate with device active electrode) to contribute to improve device performance, at the Z gauge structure that utilizes low-angle reflection, inclination strip is necessary; For SAW (Surface Acoustic Wave) resonator, adopt to disperse and assemble shape list structure, can suppress the generation of the horizontal mould of high order.
The stripe pitch of described battle array structure is value paracycle that has certain rule; In the ordinary course of things, the stripe pitch of design bar battle array is relevant to the nominal period of device active electrode, is beneficial to reduce the extending transversely of surface acoustic wave, improves device performance.
Add deielectric-coating can cause surface acoustic wave transmission characteristic that trace occurs and change, if desired, should revise device designables.
The invention has the advantages that: constraint acoustic surface wave propagation, the temperature characterisitic of compensation piezoelectric substrate, can be applied to all SAW (Surface Acoustic Wave) device, improves its performance.
Accompanying drawing explanation
Device chip after employing the present invention of Fig. 1 embodiment of the present invention.
Embodiment
Further make the following instructions with specific embodiment by reference to the accompanying drawings.
The present embodiment is at conventional SAW (Surface Acoustic Wave) device chip surface stack one deck bar paracycle battle array dielectric-coating structure.Deielectric-coating is the conventional SiO of microelectric technique
2, the bar direction of bar battle array is extended along acoustic surface wave propagation direction.
Conventional SAW (Surface Acoustic Wave) device chip is by piezoelectric substrate and adopts the single-layer metal film electrode pattern of microelectric technique making to form thereon.Advanced SAW (Surface Acoustic Wave) device also can adopt the chip technologies such as piezoelectric substrate, deielectric-coating loading, surface passivation layer, the thickening of extraction electrode pressure welding layer of passivation or pre-deposited deielectric-coating now, improve device performance, but chip technology essence does not become.While adopting new chip technology, for professional person, implement the present invention and can not bring hell and high water, so the present invention is described with conventional device chip below.
Fig. 1 is for adopting the device chip after the present invention.
1) deielectric-coating bar battle array is superimposed upon device electrode superstructure.Bar battle array structure is to be made by its temperature coefficient deielectric-coating contrary with the temperature coefficient of piezoelectric substrate used, for example SiO
2.
Medium thickness determines by compensating piezoelectric substrate temperature characterisitic, and be generally 0.1 micron to 5 microns, correlation technique is known.
2) the bar direction of bar battle array is approximate extends along acoustic surface wave propagation direction, bar can be parallel, tilt, disperse to assemble and its combination.
The surface acoustic wave sound channel designing due to SAW (Surface Acoustic Wave) device generally arranges along acoustic surface wave propagation direction, requires useful surface acoustic wave not depart from, so stack bar battle array structure is to be mostly parallel to the parallel strip battle array that acoustic surface wave propagation direction is extended.
For the piezoelectric with non-zero degree Neng Liu angle, adopt the bar battle array structure of (nonopiate with mixed device active electrode) to contribute to improve device performance.At the Z gauge structure that utilizes low-angle reflection, inclination strip is necessary.
For SAW (Surface Acoustic Wave) resonator, adopt to disperse and assemble shape list structure, can suppress the generation of the horizontal mould of high order.
3) stripe pitch of bar battle array is value paracycle that has certain rule.
In the ordinary course of things, the stripe pitch of design bar battle array is relevant with the nominal period of device active electrode, to reach, suppresses surface acoustic wave object extending transversely.
Add overlaying structure can cause surface acoustic wave transmission characteristic that trace occurs and change, if desired, should revise device designables.
Although the present invention with preferred embodiment openly as above; but embodiment and accompanying drawing are not for limiting the invention, be anyly familiar with this skill person, without departing from the spirit and scope of the invention; from working as, can make various changes or retouch, equally within protection scope of the present invention.What therefore protection scope of the present invention should be defined with the application's claim protection range is as the criterion.
Claims (5)
1. a bar battle array deielectric-coating SAW (Surface Acoustic Wave) device, is characterized in that: device chip surface stack one deck bar battle array deielectric-coating.
2. SAW (Surface Acoustic Wave) device according to claim 1, is characterized in that: the temperature coefficient of described deielectric-coating is contrary with the temperature coefficient of piezoelectric substrate.
3. SAW (Surface Acoustic Wave) device according to claim 1, is characterized in that: the bar direction of described battle array deielectric-coating is extended along acoustic surface wave propagation direction.
4. SAW (Surface Acoustic Wave) device according to claim 1, is characterized in that: the stripe pitch of described battle array deielectric-coating is value paracycle that has certain rule.
5. SAW (Surface Acoustic Wave) device according to claim 1, is characterized in that: described medium is SiO
2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310468254.1A CN103516328A (en) | 2013-10-10 | 2013-10-10 | Strip array medium film acoustic surface wave device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310468254.1A CN103516328A (en) | 2013-10-10 | 2013-10-10 | Strip array medium film acoustic surface wave device |
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| CN103516328A true CN103516328A (en) | 2014-01-15 |
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| CN201310468254.1A Pending CN103516328A (en) | 2013-10-10 | 2013-10-10 | Strip array medium film acoustic surface wave device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104320102A (en) * | 2014-10-24 | 2015-01-28 | 中国电子科技集团公司第五十五研究所 | Composite dielectric film surface acoustic wave device |
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7939987B1 (en) * | 2008-10-23 | 2011-05-10 | Triquint Semiconductor, Inc. | Acoustic wave device employing reflective elements for confining elastic energy |
| CN102324908A (en) * | 2011-07-07 | 2012-01-18 | 中国电子科技集团公司第五十五研究所 | SAW device with stack bar battle array structure paracycle |
| CN203491988U (en) * | 2013-10-10 | 2014-03-19 | 中国电子科技集团公司第五十五研究所 | Strip-array dielectric film surface acoustic wave device |
-
2013
- 2013-10-10 CN CN201310468254.1A patent/CN103516328A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7939987B1 (en) * | 2008-10-23 | 2011-05-10 | Triquint Semiconductor, Inc. | Acoustic wave device employing reflective elements for confining elastic energy |
| CN102324908A (en) * | 2011-07-07 | 2012-01-18 | 中国电子科技集团公司第五十五研究所 | SAW device with stack bar battle array structure paracycle |
| CN203491988U (en) * | 2013-10-10 | 2014-03-19 | 中国电子科技集团公司第五十五研究所 | Strip-array dielectric film surface acoustic wave device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104320102A (en) * | 2014-10-24 | 2015-01-28 | 中国电子科技集团公司第五十五研究所 | Composite dielectric film surface acoustic wave device |
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN110708035B (en) * | 2019-10-21 | 2022-04-01 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
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| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Chen Peidi Inventor after: Sun Juan Inventor after: Chen Tao Inventor after: Liu Jingyong Inventor after: He Chaofeng Inventor after: Xiao Gongya Inventor before: Chen Peidi Inventor before: Sun Juan Inventor before: Liu Jianyong Inventor before: He Chaofeng Inventor before: Xiao Gongya |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CHEN PEI SUN JUAN LIU JIANYONG HE CHAOFENG XIAO GONGYA TO: CHEN PEI SUN JUAN CHEN TAO LIU JINGYONG HE CHAOFENG XIAO GONGYA |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140115 |
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