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CN103514934B - Address transition signal detection circuit - Google Patents

Address transition signal detection circuit Download PDF

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CN103514934B
CN103514934B CN201310482867.0A CN201310482867A CN103514934B CN 103514934 B CN103514934 B CN 103514934B CN 201310482867 A CN201310482867 A CN 201310482867A CN 103514934 B CN103514934 B CN 103514934B
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transistor
address signal
electrically connected
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collector
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CN103514934A (en
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刘鑫
赵发展
韩郑生
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Ruili Flat Core Microelectronics Guangzhou Co Ltd
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Institute of Microelectronics of CAS
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Abstract

The invention provides an address transition signal detection circuit which is characterized by comprising a delay amplifying circuit, wherein the delay amplifying circuit is used for delaying and inverting an input address signal and outputting the delayed and inverted address signal and amplifying and outputting the input address signal. By using the delay amplifying circuit, the delay inverting output can be carried out on the input address signal, the accuracy of the address conversion signal is ensured, the input address signal can be amplified and output at the same time, the attenuation of the address signal is avoided, and the use of a subsequent circuit is facilitated.

Description

地址转变信号探测电路Address transition signal detection circuit

技术领域technical field

本发明涉及异步电路系统,尤其涉及一种地址信号转变探测电路。The invention relates to an asynchronous circuit system, in particular to an address signal transition detection circuit.

背景技术Background technique

在异步电路系统中特别是SRAM存储器的操作中,当地址线上有变化时意味着要开始一个新的读或写得周期。虽然SRAM没有外部时钟也不需要额外的时序和控制信号,其存储器的操作由地址总线上的事件或R/W信号来启动。但这样则意味着所有电路(如译码器和灵敏放大器)都是完全静态实现的,因此其中一个输入信号上的变化(数据或地址总线,R/W)都会主次通过后续的电路层次。所以这样一个全静态的方法无论从面积还是功耗的角度考虑对于较大容量的存储器都是不可行的。因此还需要产生一个类似的时钟信号来触发内部的一些电路做好读写的准备工作。In the operation of asynchronous circuit system especially SRAM memory, when there is a change on the address line, it means to start a new read or write cycle. Although SRAM has no external clock and does not require additional timing and control signals, its memory operations are initiated by events on the address bus or the R/W signal. But this means that all circuits (like decoders and sense amplifiers) are implemented completely statically, so a change on one of the input signals (data or address bus, R/W) will pass through subsequent circuit levels in a primary and secondary manner. Therefore, such an all-static method is not feasible for larger-capacity memories in terms of area or power consumption. Therefore, it is necessary to generate a similar clock signal to trigger some internal circuits to prepare for reading and writing.

地址转变检测电路ATD就是一种用来检测地址线上的变化,并产生一个脉冲信号用于内部电路,该脉冲信号的宽度是一个重要的参数。太宽的脉冲会导致地址译码已经完成了,字线已经准备接通,而位线的预充电还没有结束,这直接导致了读写的延迟。太窄的脉冲会导致位线充电不充分,导致读周期的延迟;在脉冲字线的情况下可能导致读的失败。The address transition detection circuit ATD is used to detect the change on the address line and generate a pulse signal for the internal circuit. The width of the pulse signal is an important parameter. A pulse that is too wide will lead to the completion of address decoding, the word line is ready to be connected, and the precharging of the bit line has not yet completed, which directly leads to the delay of reading and writing. A pulse that is too narrow will result in insufficient charging of the bit line, resulting in a delay in the read cycle; in the case of a pulsed word line, it may result in a read failure.

因此ATD电路在SRAM以及PROM模块的结构中起着重要的作用,它是大多数时序信号的来源并且是整个关键时序路径的一部分。Therefore, the ATD circuit plays an important role in the structure of SRAM and PROM modules. It is the source of most timing signals and is a part of the entire critical timing path.

如图1是现有技术中常用的一种地址转变探测电路,虽然这种传统的地址转变检测电路可以在一顶程度上达到所需,但是在地址转变的探测的过程中使得地址信号变弱,从而在很大的程度上输出的地址信号较弱,同时也使得地址信号变弱,不利于后续电路使用,即使将探测的地址转变信号进行放大,也会对后续电路造成影响。Figure 1 is a commonly used address transition detection circuit in the prior art. Although this traditional address transition detection circuit can meet the requirements to a certain extent, the address signal is weakened during the detection of the address transition. , so that the output address signal is weak to a large extent, which also makes the address signal weaker, which is not conducive to the use of subsequent circuits. Even if the detected address transition signal is amplified, it will also affect subsequent circuits.

发明内容Contents of the invention

本发明要解决的技术问题是提供一种既能输出有效地址转变信号、又能对输出地址信号放大的地址转变信号探测电路。The technical problem to be solved by the present invention is to provide an address transition signal detection circuit capable of outputting effective address transition signals and amplifying the output address signals.

为了解决以上技术问题,本发明提供一种地址信号转变探测电路,其中,包括一延迟放大电路,所述延迟电路对输入的地址信号进行延迟反相输出,同时对输入的地址信号进行放大输出。In order to solve the above technical problems, the present invention provides an address signal transition detection circuit, which includes a delay amplifier circuit, the delay circuit delays and inverts the input address signal, and simultaneously amplifies and outputs the input address signal.

优选的,所述延迟放大电路包括地址信号延迟器和地址信号放大器。Preferably, the delay amplifying circuit includes an address signal delayer and an address signal amplifier.

优选的,所述延迟放大电路还包括启动电路。Preferably, the delay amplifier circuit further includes a start-up circuit.

优选的,所述启动电路包括晶体管M1、晶体管M2、晶体管M3、晶体管M6和晶体管M8,所述晶体管M1和晶体管M2组成反相器;Preferably, the startup circuit includes a transistor M1, a transistor M2, a transistor M3, a transistor M6 and a transistor M8, and the transistor M1 and the transistor M2 form an inverter;

所述晶体管M1的门极与所述晶体管M2的门极共同电连接后接电源地,所述晶体管M1的发射极接电源,所述晶体管M2的发射极接电源地,所述所述晶体管M1的集电极与所述晶体管M2的集电极电连接作为所述反相器的输出端;The gate of the transistor M1 is electrically connected to the gate of the transistor M2 and then connected to the power supply ground, the emitter of the transistor M1 is connected to the power supply, the emitter of the transistor M2 is connected to the power supply ground, and the transistor M1 The collector of the transistor M2 is electrically connected to the collector as the output terminal of the inverter;

所述反相器的输出端分别电连接所述晶体管M6的门极和晶体管M8的门极,所述晶体管M6的发射极和晶体管M8的发射极接电源地,所述晶体管M6的集电极和晶体管M8的集电极电连接所述延迟器;The output terminal of the inverter is electrically connected to the gate of the transistor M6 and the gate of the transistor M8 respectively, the emitter of the transistor M6 and the emitter of the transistor M8 are connected to the power ground, and the collector of the transistor M6 and The collector of the transistor M8 is electrically connected to the delayer;

所述晶体管M3的门极连接电源地,所述晶体管M3的发射极接电源,所述晶体管M3的集电极电连接所述延迟器。The gate of the transistor M3 is connected to the power ground, the emitter of the transistor M3 is connected to the power, and the collector of the transistor M3 is electrically connected to the delayer.

优选的,所述延迟器包括晶体管M4、晶体管M5和晶体管M7,所述晶体管M4的门极、所述晶体管M5的门极和所述晶体管M7的门极同时电连接作为延迟器的输入端接收输入地址信号,所述晶体管M4的集电极、所述晶体管M5的集电极和所述晶体管M7的集电极同时电连接作为延迟器的输出端,所述晶体管M4的发射极点连接所述晶体管M3的集电极,所述晶体管M5的发射极电连接所述晶体管M6的集电极,所述晶体管M7的发射极电连接所述晶体管M8的集电极。Preferably, the delayer includes a transistor M4, a transistor M5 and a transistor M7, the gate of the transistor M4, the gate of the transistor M5 and the gate of the transistor M7 are electrically connected at the same time as the input terminal of the delayer to receive The address signal is input, the collector of the transistor M4, the collector of the transistor M5 and the collector of the transistor M7 are simultaneously electrically connected as the output end of the delayer, and the emitter of the transistor M4 is connected to the transistor M3. collector, the emitter of the transistor M5 is electrically connected to the collector of the transistor M6, and the emitter of the transistor M7 is electrically connected to the collector of the transistor M8.

优选的,所述地址信号放大器包括:Preferably, the address signal amplifier includes:

反相放大器,将弱“0”信号反相放大输出强“1”信号,或者将弱“1”信号反相放大输出强“0”信号,用于将延迟后的地址信号反相放大。The inverting amplifier inverts and amplifies the weak "0" signal to output a strong "1" signal, or inverts and amplifies the weak "1" signal to output a strong "0" signal, which is used to invert and amplify the delayed address signal.

第一反相器,接收延迟放大的地址信号,并输出与输入地址信号对应的延迟反相地址信号;The first inverter receives the delayed and amplified address signal, and outputs a delayed inverted address signal corresponding to the input address signal;

第二反相器,接收第一反相器输出的反相地址信号,并输出与输入地址信号对应的延迟同相地址信号。The second inverter receives the inverted address signal output by the first inverter, and outputs a delayed in-phase address signal corresponding to the input address signal.

优选的,所述反相放大器包括晶体管M9、晶体管M10、晶体管M11和晶体管M12;Preferably, the inverting amplifier includes a transistor M9, a transistor M10, a transistor M11 and a transistor M12;

所述晶体管M9的发射极电连接电源,所述晶体管M9的集电极电连接所述延迟器的输出端,所述晶体管M9的门极、所述晶体管M10的门极、所述晶体管M11的集电极以及所述晶体管M12的集电极电连接后作为所述反相放大器的输出端;The emitter of the transistor M9 is electrically connected to the power supply, the collector of the transistor M9 is electrically connected to the output end of the delayer, the gate of the transistor M9, the gate of the transistor M10, the collector of the transistor M11 The electrode and the collector of the transistor M12 are electrically connected as the output end of the inverting amplifier;

所述晶体管M10的发射极电连接电源地,所述晶体管M10的集电极电连接所述延迟器的输出端;The emitter of the transistor M10 is electrically connected to the power ground, and the collector of the transistor M10 is electrically connected to the output end of the delayer;

所述晶体管M11的发射极电连接电源,所述晶体管M11的门极电连接所述延迟器的输出端;The emitter of the transistor M11 is electrically connected to a power supply, and the gate of the transistor M11 is electrically connected to the output terminal of the delayer;

所述晶体管M12的发射极电连接电源地,所述晶体管M12的门极电连接所述延迟器的输出端。The emitter of the transistor M12 is electrically connected to the power ground, and the gate of the transistor M12 is electrically connected to the output terminal of the delayer.

优选的,所述第一反相器包括晶体管M13和晶体管M14,所述晶体管M13的门极和晶体管M14的门极电连接作为所述第一反相器的输入端,所述晶体管M13的发射极接电源,所述晶体管M14的发射极接电源地,所述晶体管M13的集电极和晶体管M14的集电极电连接后作为第一反相器的输出端。Preferably, the first inverter includes a transistor M13 and a transistor M14, the gate of the transistor M13 and the gate of the transistor M14 are electrically connected as the input terminal of the first inverter, and the emitter of the transistor M13 The pole is connected to the power supply, the emitter of the transistor M14 is connected to the power ground, and the collector of the transistor M13 and the collector of the transistor M14 are electrically connected to serve as the output end of the first inverter.

优选的,所述第二反相器包括晶体管M15和晶体管M16,所述晶体管M15的门极和晶体管M16的门极电连接作为所述第二反相器的输入端,所述晶体管M15的发射极接电源,所述晶体管M16的发射极接电源地,所述晶体管M15的集电极和晶体管M16的集电极电连接后作为第二反相器的输出端。Preferably, the second inverter includes a transistor M15 and a transistor M16, the gate of the transistor M15 and the gate of the transistor M16 are electrically connected as the input terminal of the second inverter, and the emitter of the transistor M15 The pole is connected to the power supply, the emitter of the transistor M16 is connected to the power ground, and the collector of the transistor M15 and the collector of the transistor M16 are electrically connected to serve as the output end of the second inverter.

优选的,所述地址信号转变探测电路还包括异或门,所述异或门一端接收输入地址信号,所述异或门的另一端接收由延迟电路输出的延迟反相地址信号,并输出地址转变信号。Preferably, the address signal transition detection circuit further includes an exclusive OR gate, one end of the exclusive OR gate receives the input address signal, and the other end of the exclusive OR gate receives the delayed inverted address signal output by the delay circuit, and outputs the address change signal.

通过使用延迟放大电路,既能对输入的地址信号进行延迟反相输出,确保地址转变信号的准确无误,又能同时对输入的地址信号进行放大输出,避免地址信号的衰减,便于后续电路的使用。By using the delay amplifier circuit, the input address signal can be delayed and inverted to ensure the accuracy of the address transition signal, and the input address signal can also be amplified and output at the same time to avoid the attenuation of the address signal and facilitate the use of subsequent circuits. .

附图说明Description of drawings

下面结合附图和具体实施方式对本发明作进一步的详细说明:Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

图1是现有的地址转变信号探测电路;Fig. 1 is an existing address transition signal detection circuit;

图2是本发明的地址转变信号探测电路实施例的延迟放大电路原理图;Fig. 2 is the schematic diagram of the delay amplification circuit of the address transition signal detection circuit embodiment of the present invention;

图3是本发明的地址转变信号探测电路实施例的地址转变原理图。FIG. 3 is a schematic diagram of the address transition of an embodiment of the address transition signal detection circuit of the present invention.

具体实施方式detailed description

为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明,使本发明的上述及其它目的、特征和优势将更加清晰。在全部附图中相同的附图标记指示相同的部分。并未刻意按比例绘制附图,重点在于示出本发明的主旨。In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, the specific implementation modes of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the above-mentioned and other purposes, features and advantages of the present invention will be clearer. Like reference numerals designate like parts throughout the drawings. The drawings have not been drawn to scale, emphasis instead being placed upon illustrating the gist of the invention.

本发明提供一种地址信号转变探测电路,其中,包括一延迟放大电路,所述延迟电路对输入的地址信号进行延迟反相放大输出,同时对输入的地址信号进行放大输出。The present invention provides an address signal transition detection circuit, which includes a delay amplifier circuit, the delay circuit delays, reverses, amplifies and outputs the input address signal, and at the same time amplifies and outputs the input address signal.

如图2所示,延迟放大电路包括地址信号延迟器、地址信号放大器和启动电路。启动电路包括晶体管M1、晶体管M2、晶体管M3、晶体管M6和晶体管M8。所述延迟器包括晶体管M4、晶体管M5和晶体管M7。As shown in FIG. 2, the delay amplifier circuit includes an address signal delayer, an address signal amplifier and a startup circuit. The startup circuit includes a transistor M1, a transistor M2, a transistor M3, a transistor M6 and a transistor M8. The delayer includes a transistor M4, a transistor M5 and a transistor M7.

晶体管M1的门极与晶体管M2的门极共同电连接后接电源地,晶体管M1的发射极接电源,晶体管M2的发射极接电源地,所述晶体管M1的集电极与晶体管M2的集电极电连接作为反相器的输出端;反相器的输出端分别电连接所述晶体管M6的门极和晶体管M8的门极,晶体管M6的发射极和晶体管M8的发射极接电源地,晶体管M6的集电极和晶体管M8的集电极电连接延迟器;晶体管M3的门极连接电源地,晶体管M3的发射极接电源,晶体管M3的集电极电连接延迟器。The gate of the transistor M1 is electrically connected to the gate of the transistor M2 and then connected to the power supply ground, the emitter of the transistor M1 is connected to the power supply, the emitter of the transistor M2 is connected to the power supply ground, and the collector of the transistor M1 is electrically connected to the collector of the transistor M2. connected as the output terminal of the inverter; the output terminal of the inverter is electrically connected to the gate of the transistor M6 and the gate of the transistor M8 respectively, the emitter of the transistor M6 and the emitter of the transistor M8 are connected to the power supply ground, and the transistor M6 The collector and the collector of the transistor M8 are electrically connected to the delayer; the gate of the transistor M3 is connected to the power ground, the emitter of the transistor M3 is connected to the power supply, and the collector of the transistor M3 is electrically connected to the delayer.

地址信号放大器包括:Address signal amplifiers include:

反相放大器,将弱“0”信号反相放大输出强“1”信号,或者将弱“1”信号反相放大输出强“0”信号,用于将延迟后的地址信号反相放大。The inverting amplifier inverts and amplifies the weak "0" signal to output a strong "1" signal, or inverts and amplifies the weak "1" signal to output a strong "0" signal, which is used to invert and amplify the delayed address signal.

第一反相器,接收延迟放大的地址信号,并输出与输入地址信号对应的延迟反相地址信号;The first inverter receives the delayed and amplified address signal, and outputs a delayed inverted address signal corresponding to the input address signal;

第二反相器,接收第一反相器输出的反相地址信号,并输出与输入地址信号对应的延迟同相地址信号。The second inverter receives the inverted address signal output by the first inverter, and outputs a delayed in-phase address signal corresponding to the input address signal.

在本实施例中,反相放大器包括晶体管M9、晶体管M10、晶体管M11和晶体管M12。所述第一反相器包括晶体管M13和晶体管M14。所述第二反相器包括晶体管M15和晶体管M16。In this embodiment, the inverting amplifier includes a transistor M9, a transistor M10, a transistor M11 and a transistor M12. The first inverter includes a transistor M13 and a transistor M14. The second inverter includes a transistor M15 and a transistor M16.

晶体管M9的发射极电连接电源,晶体管M9的集电极电连接延迟器的输出端,晶体管M9的门极、晶体管M10的门极、晶体管M11的集电极以及晶体管M12的集电极电连接后作为反相放大器的输出端;晶体管M10的发射极电连接电源地,晶体管M10的集电极电连接延迟器的输出端;晶体管M11的发射极电连接电源,所述晶体管M11的门极电连接延迟器的输出端;晶体管M12的发射极电连接电源地,晶体管M12的门极电连接延迟器的输出端,晶体管M13的门极和晶体管M14的门极电连接作为所述第一反相器的输入端,晶体管M13的发射极接电源,晶体管M14的发射极接电源地,晶体管M13的集电极和晶体管M14的集电极电连接后作为第一反相器的输出端,晶体管M15的门极和晶体管M16的门极电连接作为第二反相器的输入端,晶体管M15的发射极接电源,晶体管M16的发射极接电源地,晶体管M15的集电极和晶体管M16的集电极电连接后作为第二反相器的输出端。The emitter of the transistor M9 is electrically connected to the power supply, the collector of the transistor M9 is electrically connected to the output terminal of the delayer, the gate of the transistor M9, the gate of the transistor M10, the collector of the transistor M11 and the collector of the transistor M12 are electrically connected to serve as a reverse The output end of the phase amplifier; the emitter of the transistor M10 is electrically connected to the power supply ground, and the collector of the transistor M10 is electrically connected to the output end of the delayer; the emitter of the transistor M11 is electrically connected to the power supply, and the gate of the transistor M11 is electrically connected to the delayer. Output end; the emitter of the transistor M12 is electrically connected to the power supply ground, the gate of the transistor M12 is electrically connected to the output end of the delayer, and the gate of the transistor M13 and the gate of the transistor M14 are electrically connected as the input end of the first inverter , the emitter of the transistor M13 is connected to the power supply, the emitter of the transistor M14 is connected to the power supply ground, the collector of the transistor M13 and the collector of the transistor M14 are electrically connected as the output end of the first inverter, the gate of the transistor M15 is connected to the transistor M16 The gate of the transistor M15 is electrically connected to the input terminal of the second inverter, the emitter of the transistor M15 is connected to the power supply, the emitter of the transistor M16 is connected to the power supply ground, and the collector of the transistor M15 is electrically connected to the collector of the transistor M16 as the second inverter. output terminal of the phaser.

在本实施例中,晶体管M1和晶体管M2组成反相器,其将输入的GND信号反相输出为高电平,进而使得晶体管M6和晶体管M8导通。而晶体管M3、晶体管M6和晶体管M8分别控制了晶体管M4、晶体管M5和晶体管M7的导通。即启动电路的导通使得延迟器开启。In this embodiment, the transistor M1 and the transistor M2 form an inverter, which inverts the input GND signal and outputs it as a high level, thereby turning on the transistor M6 and the transistor M8. The transistor M3 , the transistor M6 and the transistor M8 respectively control the conduction of the transistor M4 , the transistor M5 and the transistor M7 . That is, the conduction of the start-up circuit causes the delay to be turned on.

而延迟器将输入的地址信号Address延迟反相后传输给反相放大器。反相放大器将延迟器输出的经延迟反相后的地址信号再进行反相放大输出。此时输出的地址信号与原地址信号为同相输出。而第一反相器再将已经反相放大器输出的信号再次进行反相,此时输出与原输入地址的反相的地址信号OUT-Address-B。该地址信号OUT-Address-B再经第二反相器输出原输入地址信号的放大信号。The delayer delays and inverts the input address signal Address and transmits it to the inverting amplifier. The inverting amplifier inverts, amplifies and outputs the delayed and inverted address signal output by the delayer. The output address signal and the original address signal are output in the same phase at this time. The first inverter then inverts the signal output by the inverting amplifier again, and at this time outputs an address signal OUT-Address-B which is the inversion of the original input address. The address signal OUT-Address-B then outputs an amplified signal of the original input address signal through the second inverter.

如图3所示,地址信号转变探测电路还包括异或门,所述异或门一端接收输入地址信号,所述异或门的另一端接收由延迟电路输出的延迟反相地址信号,并输出地址转变信号ATD。As shown in Figure 3, the address signal transition detection circuit also includes an exclusive OR gate, one end of the exclusive OR gate receives the input address signal, and the other end of the exclusive OR gate receives the delayed inversion address signal output by the delay circuit, and outputs Address transition signal ATD.

通过使用延迟放大电路,既能对输入的地址信号进行延迟反相输出,确保地址转变信号的准确无误,又能同时对输入的地址信号进行放大输出,避免地址信号的衰减,便于后续电路的使用。By using the delay amplifier circuit, the input address signal can be delayed and inverted to ensure the accuracy of the address transition signal, and the input address signal can also be amplified and output at the same time to avoid the attenuation of the address signal and facilitate the use of subsequent circuits. .

在以上的描述中阐述了很多具体细节以便于充分理解本发明。但是以上描述仅是本发明的较佳实施例而已,本发明能够以很多不同于在此描述的其它方式来实施,因此本发明不受上面公开的具体实施的限制。同时任何熟悉本领域技术人员在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰,均仍属于本发明技术方案保护的范围内。In the foregoing description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the above descriptions are only preferred embodiments of the present invention, and the present invention can be implemented in many other ways different from those described here, so the present invention is not limited by the specific implementations disclosed above. At the same time, any person skilled in the art can use the methods and technical content disclosed above to make many possible changes and modifications to the technical solution of the present invention without departing from the scope of the technical solution of the present invention, or modify it into an equivalent implementation of equivalent changes example. All the content that does not deviate from the technical solution of the present invention, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention still belong to the protection scope of the technical solution of the present invention.

Claims (5)

1.地址转变信号探测电路,其特征在于,包括一延迟放大电路,所述延迟放大电路对输入的地址信号进行延迟反相输出,同时对输入的地址信号进行放大输出;所述延迟放大电路包括地址信号延迟器和地址信号放大器;所述延迟放大电路还包括启动电路;所述地址信号转变探测电路还包括异或门,所述异或门一端接收输入地址信号,所述异或门的另一端接收由延迟放大电路输出的延迟反相地址信号,并输出地址转变信号;1. Address transition signal detection circuit, it is characterized in that, comprise a delay amplifier circuit, described delay amplifier circuit carries out delay inversion output to the address signal of input, amplifies and outputs the address signal of input simultaneously; Described delay amplifier circuit comprises An address signal delayer and an address signal amplifier; the delay amplifying circuit also includes a startup circuit; the address signal transition detection circuit also includes an exclusive OR gate, one end of the exclusive OR gate receives an input address signal, and the other end of the exclusive OR gate One end receives the delayed inversion address signal output by the delay amplifier circuit, and outputs an address transition signal; 所述地址信号放大器包括:反相放大器、第一反相器、第二反相器;The address signal amplifier includes: an inverting amplifier, a first inverter, and a second inverter; 所述启动电路使得所述地址信号延迟器开启,所述地址信号延迟器将输入的地址信号Address延迟反相后传输给所述地址信号放大器的所述反相放大器,所述反相放大器将所述地址信号延迟器输出的经延迟反相后的地址信号再进行反相放大输出,此时输出的地址信号与原地址信号为同相输出,而所述地址信号放大器的所述第一反相器再将已经所述反相放大器输出的信号再次进行反相,此时输出与原输入地址的反相的地址信号OUT-Address-B,该地址信号OUT-Address-B再经所述地址信号放大器的所述第二反相器输出原输入地址信号的放大信号;The start-up circuit enables the address signal delayer to be turned on, and the address signal delayer delays and inverts the input address signal Address and transmits it to the inverting amplifier of the address signal amplifier, and the inverting amplifier converts the address signal The delayed and inverted address signal output by the address signal delayer is then inverted and amplified for output. At this time, the output address signal and the original address signal are in-phase output, and the first inverter of the address signal amplifier Then the signal output by the inverting amplifier is inverted again, and at this time, the address signal OUT-Address-B, which is the inversion of the original input address, is output, and the address signal OUT-Address-B is passed through the address signal amplifier. The second inverter outputs an amplified signal of the original input address signal; 所述地址信号延迟器包括晶体管M4、晶体管M5和晶体管M7,所述晶体管M4的门极、所述晶体管M5的门极和所述晶体管M7的门极同时电连接作为地址信号延迟器的输入端接收输入地址信号,所述晶体管M4的集电极、所述晶体管M5的集电极和所述晶体管M7的集电极同时电连接作为地址信号延迟器的输出端,所述晶体管M4的发射极点连接所述晶体管M3的集电极,所述晶体管M5的发射极电连接所述晶体管M6的集电极,所述晶体管M7的发射极电连接晶体管M8的集电极。The address signal delayer includes a transistor M4, a transistor M5 and a transistor M7, the gate of the transistor M4, the gate of the transistor M5 and the gate of the transistor M7 are simultaneously electrically connected as the input end of the address signal delayer Receive the input address signal, the collector of the transistor M4, the collector of the transistor M5 and the collector of the transistor M7 are simultaneously electrically connected as the output end of the address signal delayer, and the emitter of the transistor M4 is connected to the The collector of the transistor M3, the emitter of the transistor M5 are electrically connected to the collector of the transistor M6, and the emitter of the transistor M7 is electrically connected to the collector of the transistor M8. 2.根据权利要求1所述的地址转变信号探测电路,其特征在于,所述启动电路包括晶体管M1、晶体管M2、晶体管M3、晶体管M6和晶体管M8,所述晶体管M1和晶体管M2组成反相器;2. The address transition signal detection circuit according to claim 1, wherein the startup circuit comprises a transistor M1, a transistor M2, a transistor M3, a transistor M6 and a transistor M8, and the transistor M1 and the transistor M2 form an inverter ; 所述晶体管M1的门极与所述晶体管M2的门极共同电连接后接电源地,所述晶体管M1的发射极接电源,所述晶体管M2的发射极接电源地,所述所述晶体管M1的集电极与所述晶体管M2的集电极电连接作为所述反相器的输出端;The gate of the transistor M1 is electrically connected to the gate of the transistor M2 and then connected to the power supply ground, the emitter of the transistor M1 is connected to the power supply, the emitter of the transistor M2 is connected to the power supply ground, and the transistor M1 The collector of the transistor M2 is electrically connected to the collector as the output terminal of the inverter; 所述反相器的输出端分别电连接所述晶体管M6的门极和晶体管M8的门极,所述晶体管M6的发射极和晶体管M8的发射极接电源地,所述晶体管M6的集电极和晶体管M8的集电极电连接所述地址信号延迟器;The output terminal of the inverter is electrically connected to the gate of the transistor M6 and the gate of the transistor M8 respectively, the emitter of the transistor M6 and the emitter of the transistor M8 are connected to the power ground, and the collector of the transistor M6 and The collector of the transistor M8 is electrically connected to the address signal delayer; 所述晶体管M3的门极连接电源地,所述晶体管M3的发射极接电源,所述晶体管M3的集电极电连接所述地址信号延迟器。The gate of the transistor M3 is connected to the power ground, the emitter of the transistor M3 is connected to the power, and the collector of the transistor M3 is electrically connected to the address signal delayer. 3.根据权利要求1所述的地址转变信号探测电路,其特征在于,所述反相放大器包括晶体管M9、晶体管M10、晶体管M11和晶体管M12;3. The address transition signal detection circuit according to claim 1, wherein the inverting amplifier comprises a transistor M9, a transistor M10, a transistor M11 and a transistor M12; 所述晶体管M9的发射极电连接电源,所述晶体管M9的集电极电连接所述地址信号延迟器的输出端,所述晶体管M9的门极、所述晶体管M10的门极、所述晶体管M11的集电极以及所述晶体管M12的集电极电连接后作为所述反相放大器的输出端;The emitter of the transistor M9 is electrically connected to the power supply, the collector of the transistor M9 is electrically connected to the output end of the address signal delayer, the gate of the transistor M9, the gate of the transistor M10, the transistor M11 The collector of the transistor M12 and the collector of the transistor M12 are electrically connected as the output terminal of the inverting amplifier; 所述晶体管M10的发射极电连接电源地,所述晶体管M10的集电极电连接所述地址信号延迟器的输出端;The emitter of the transistor M10 is electrically connected to the power ground, and the collector of the transistor M10 is electrically connected to the output terminal of the address signal delayer; 所述晶体管M11的发射极电连接电源,所述晶体管M11的门极电连接所述地址信号延迟器的输出端;The emitter of the transistor M11 is electrically connected to a power supply, and the gate of the transistor M11 is electrically connected to the output terminal of the address signal delayer; 所述晶体管M12的发射极电连接电源地,所述晶体管M12的门极电连接所述地址信号延迟器的输出端。The emitter of the transistor M12 is electrically connected to the power ground, and the gate of the transistor M12 is electrically connected to the output terminal of the address signal delayer. 4.根据权利要求1所述的地址转变信号探测电路,其特征在于,所述第一反相器包括晶体管M13和晶体管M14,所述晶体管M13的门极和晶体管M14的门极电连接作为所述第一反相器的输入端,所述晶体管M13的发射极接电源,所述晶体管M14的发射极接电源地,所述晶体管M13的集电极和晶体管M14的集电极电连接后作为第一反相器的输出端。4. The address transition signal detection circuit according to claim 1, wherein the first inverter comprises a transistor M13 and a transistor M14, the gate of the transistor M13 is electrically connected to the gate of the transistor M14 as the The input end of the first inverter, the emitter of the transistor M13 is connected to the power supply, the emitter of the transistor M14 is connected to the power supply ground, and the collector of the transistor M13 is electrically connected to the collector of the transistor M14 as the first output of the inverter. 5.根据权利要求1所述的地址转变信号探测电路,其特征在于,所述第二反相器包括晶体管M15和晶体管M16,所述晶体管M15的门极和晶体管M16的门极电连接作为所述第二反相器的输入端,所述晶体管M15的发射极接电源,所述晶体管M16的发射极接电源地,所述晶体管M15的集电极和晶体管M16的集电极电连接后作为第二反相器的输出端。5. The address transition signal detection circuit according to claim 1, wherein the second inverter comprises a transistor M15 and a transistor M16, the gate of the transistor M15 is electrically connected to the gate of the transistor M16 as the The input end of the second inverter, the emitter of the transistor M15 is connected to the power supply, the emitter of the transistor M16 is connected to the power supply ground, and the collector of the transistor M15 is electrically connected to the collector of the transistor M16 as the second inverter. output of the inverter.
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