CN103510058B - A kind of method preparing novel conductive zinc aluminum gallium oxide material and film - Google Patents
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film Download PDFInfo
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- CN103510058B CN103510058B CN201310494570.6A CN201310494570A CN103510058B CN 103510058 B CN103510058 B CN 103510058B CN 201310494570 A CN201310494570 A CN 201310494570A CN 103510058 B CN103510058 B CN 103510058B
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Abstract
The object of this invention is to provide a kind of method preparing novel conductive zinc aluminum gallium oxide material and film, use injection forming to prepare novel oxidized zinc-aluminium gallium target, do not use Indium sesquioxide material, reduce the cost of target.The silver in collocation middle layer or silver alloy film, form the multilayer film structure design of sandwich, the resistance Victoria significantly reducing film under suitable gauge control holds the high-transmittance of film at visible ray, improve the applicability of zinc aluminum gallium oxide film in the thin film photocell such as non-crystalline silicon and CIGS, meet the requirement of production.Due to applicable low temperature (& lt; 150 DEG C) plated film, so glass baseplate or pliability PET base material can be applied to, expand range of application.Resistance value can be reduced to 6x10
-5below Ω cm, light transmission can up to more than 85%.
Description
Technical field
The present invention relates to the preparation method of a kind of transparent conductive zinc oxide gallium aluminium material and film, belong to the Application Areas of thin film photocell.
Background technology
Along with social development and scientific and technical advancing by leaps and bounds, the mankind are day by day urgent to the demand of functional materials.New functional materials has become the key of new technology and infant industry's development.Along with the development of the industries such as indicating meter, touchscreen, semi-conductor, sun power, a kind of new functional materials---transparent conductive oxide film (transparentconductingoxide, referred to as TCO thin film) thereupon Emergence and Development gets up.So-called transparent conductive film refers to that the transmittance of a thin-film material in visible-range reaches more than 80%, and electroconductibility is high, and ratio resistance value is lower than 1x10
-3Ω .cm.The metals such as known Au, Ag, Pt, Cu, Rh, Pd, Al, Cr, when the film that formation 3-15nm is thick, all have light transmission to a certain degree, were all once applied to transparent membrane electrode.But these metallic films are too large to the absorption of light, low and the poor stability of hardness, therefore gradually develop into metal oxide is transparent conductive film material (TransparentConductionOxide, TCO) be main, this kind of film has that forbidden band is wide, visible range optical transmittance is high and the common light electrical characteristic such as resistivity is low, has broad application prospects at solar cell, plane display, specific function window coating and other field of photoelectric devices.Wherein technology of preparing is the most ripe, most widely used surely belongs to In
2o
3base (In
2o
3: Sn is called for short ITO) film.But, due to In in ito thin film
2o
3expensive, thus cause production cost higher; The material of non-oxide indium series is as stannic oxide or zinc oxide, in recent years quite a lot of must research is also had, at present in non-crystalline silicon and the photronic field of CIGS thin-film, mainly use the nesa coating of zinc oxide aluminum, because its price only has 20% of Indium sesquioxide series material.
Target has the mother metal of solid shape for sputter coating.If target can be divided into metal and pottery two large classes simply according to materials classification, if melting processing procedure and the large class of powder metallurgy processing procedure two usually generally can be divided into according to processing procedure classification.Most metals target adopts melting processing procedure (Al, Sb, Bi, Cd, Ce, Co, Cu, Ge, Au, Hf, In, Ir, Fe, Pb, Mg, Ni, Ni-Cr, Ni-Fe, Ni-V, Nb, Pd, Pt, Se, Si, Ag, Sn, Ti, V, Y, Zn, Zr) obtain, minority target just adopts powder metallurgy processing procedure (As, B, Cr, Co, Mn, Mo in view of the factors such as grain size controls, alloy ingredient fusing point gap is too large during use, Ni-Cr, Permalloy, Re, Ru, Te, W, 90W-10Ti).SiO is only had in ceramic target
2with ThF
4, Na
3alF
6adopt melting processing procedure, great majority adopt powder metallurgy processing procedure (compacting+sintering, hot pressing, heat are all pressed), comprise oxide compound (Al
2o
3, BaTiO
3, PbTiO
3, CeO
2, ITO, LiNbO
3, SiO, Ta
2o
5, TiO
2, ZrO
2, HfO
2, MgO), carbide (SiC, TiC, TaC, WC), boride (TiB
2, ZrB
2, LaB
6), nitride (Si
3n
4, TaN, TiN), fluorochemical (CaF
2, CeF
3, MgF
2), sulfide (CdS, MoS
2, TaS
2), selenide (CdSe, PbSe, MoSe), telluride (CdTe, MoTe) and silicide (MoSi
2, TaSi
2, TiSi
2, WSi
2); Wherein fluorochemical, sulfide, selenide and telluride are in making and may produce in use the necessary handled of toxicity; Carbide, boride, its fusing point of nitride is all very high, usually makes in hot pressing (suitable high temperature) mode.Be with hot pressing processing procedure for oxide target material tradition or coldly all press sintering process again, material mixing lack of homogeneity, and in sintering process, stress distribution is uneven, the large-sized oxide target material of not easily production high-density.
In the development of large-sized touch screen, LCD TV and CIGS thin film solar cell, nesa coating (TCO) is crucial in large-area electroconductibility and transparence, and the transparence of TCO and electrically to a certain degree affect the efficiency of conversion of battery and the speed of reaction of touch screen, traditional ITO and ZAO cannot meet the demand of large size product in high printing opacity and low electricity group gradually.At present in copper-indium-galliun-selenium (CIGS) photronic use by it, 600-1000nm need be reached for reaching low-resistance requirement thickness that often Indium sesquioxide aluminium (ZAO) electrically conducting transparent is bright, this also makes transparence significantly reduce, and the efficiency of thin film photocell cannot significantly be improved.The problems such as current zinc oxide series nesa coating still exists visible ray and long wavelength region transparence is lower and low temperature plated film is not electrically good, need thermal treatment to obtain preferably electrical.Because traditional ZAO (ZnO+2%Al2O3) material and need need thicker thickness just can reach preferably electrical at higher temperature plated film, be also unfavorable for the use of flexible substrate.How in the performance maintaining nesa coating, and reducing production cost, is also the important key of the enlargement of application, to produce low cost and to meet the electronic product of consumer demand.
Summary of the invention
The object of the invention is to provide the method that one prepares novel conductive zinc aluminum gallium oxide (ZAGO) material and film.The zinc aluminum gallium oxide target controlled oxidization aluminium content of injection forming is 0.1
-5.0wt%, gallium oxide content 0.1-5.0
wt%, surplus is zinc oxide.The pioneering beginning, with zinc aluminum gallium oxide (ZAGO) material, adopts sandwich structure design during sputtering thin film, and application non-crystalline silicon and CIGS thin film are in the nesa coating of thin film photocell.First the zinc aluminum gallium oxide film of first sputter 10-75nm on glass or pliability pet substrate, then the silver of sputter 5-15nm or silver alloy film, finally at the zinc aluminum gallium oxide film of sputter 10-75nm, form the film of sandwich structure, make film forming sputtering film under low temperature (<150 DEG C) state, the lower resistance that collocation intermediate metal layer can obtain, meet glass and various flexible substrate must use, improve sputtering thin film quality and performance, significantly improve the transparence of film at visible ray, form a kind of low cost, high printing opacity, low resistance, the membrane structure of the electrically conducting transparent that weathering resistance is good.Resistance value can be reduced to 6x10
-5below Ω cm, light transmission can up to more than 85%.
Described zinc aluminum gallium oxide target preferential oxidation aluminium massfraction content is 1
-3wt%, the described zinc aluminum gallium oxide target of gallium oxide most preferably quality of alumina fractional content 1
.5wt%, the massfraction content 1.5 of gallium oxide
wt%, surplus is zinc oxide.
The also preferred thickness of sputter the first layer and third layer zinc aluminum gallium oxide film is 15-25nm, and the thickness of silver or silver alloy film is 8-10nm.
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, initiate the Coating Materials of beginning with zinc aluminum gallium oxide (ZAGO) multivariant oxide, adopt sandwich structure design during sputtering thin film, be applied to non-crystalline silicon and the photronic nesa coating of CIGS thin film.First at the zinc aluminum gallium oxide film of glass (healthy and free from worry 7095) first sputter 10-75nm, the then fine silver of sputter 5-15nm or silver alloy film, finally at the zinc aluminum gallium oxide film of sputter 10-75nm, forms the film of sandwich structure.Adopt the mode of injection forming, self-control zinc aluminum gallium oxide target controlled oxidization aluminium content is at 0.1-5.0wt%, and add gallium oxide content at 0.1-5.0wt%, use zirconia ball, pure water and dispersion agent grinding be the relevant aluminum oxide of mixing fully, gallium oxide, the powdered materials such as zinc oxide, powder weight: zirconia ball weight: water weight: dispersion agent weight=1:3.0:0.25:0.02, dispersion agent is metal carboxylate dispersion agent, milling time about 24 hours, then slurry is poured in the porousness mould of three inch, dry rear demoulding through after a while forms the low density idiosome of ternary oxide mixing, then through the high temperature sintering of 1400-1550 DEG C, sputter high-density target idiosome can be formed, become self-control zinc aluminum gallium oxide (ZAGO) target of three cun with surface grinding through cutting.The preparation of fine silver target uses cycle stove, dissolves a fine silver material at 1100 DEG C, is then cast in cast iron die to be processed into 3 inch targets for subsequent use.First glass substrate, fine silver target and zinc aluminum gallium oxide target are put into vacuum splashing and plating machine (Taiwan north scholar science and technology), sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then first with the zinc aluminum gallium oxide film that DC power supply sputter the first layer 10-75nm is thick, then with the fine silver film that DC power supply sputter second layer 5-15nm is thick, finally with the zinc aluminum gallium oxide film that DC power supply sputter third layer 10-75nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, initiate the Coating Materials of beginning with zinc aluminum gallium oxide (ZAGO) multivariant oxide, adopt sandwich structure design during sputtering thin film, be applied to non-crystalline silicon and the photronic nesa coating of CIGS thin film.First at the zinc aluminum gallium oxide film of glass (healthy and free from worry 7095) first sputter 10-75nm, then the pure silver alloy film of sputter 5-15nm, finally in the indium tin zinc oxide thin film of sputter 10-75nm, the film of sandwich structure is formed.Adopt the mode of injection forming, self-control zinc aluminum gallium oxide target controlled oxidization aluminium content is at 0.1-5.0wt%, and add gallium oxide content at 0.1-5.0wt%, use zirconia ball, pure water and dispersion agent grinding be the relevant aluminum oxide of mixing fully, gallium oxide, the powdered materials such as zinc oxide, powder weight: zirconia ball weight: water weight: dispersion agent weight=1:3.0:0.25:0.02, dispersion agent is metal carboxylate dispersion agent, milling time about 24 hours, then slurry is poured in the porousness mould of three inch, dry rear demoulding through after a while forms the low density idiosome of ternary oxide mixing, then through the high temperature sintering of 1400-1550 DEG C, sputter high-density target idiosome can be formed, become self-control zinc aluminum gallium oxide (ZAGO) target of three cun with surface grinding through cutting.The preparation of silver titanium alloy target uses cycle stove, dissolves fine silver and a pure titanium material, be then cast in cast iron die for subsequent use at the target being processed into 3 cun of Ag-0.5Ti at 1100 DEG C.First glass substrate, silver-colored titanium target and zinc aluminum gallium oxide target are put into vacuum splashing and plating machine (Taiwan north scholar science and technology), sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then first with the zinc aluminum gallium oxide film that DC power supply sputter the first layer 10-75nm is thick, then with the silver-colored titanium film that DC power supply sputter second layer 5-15nm is thick, finally with the zinc aluminum gallium oxide film that DC power supply sputter third layer 10-75nm is thick, namely required Glass/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, initiate the Coating Materials of beginning with zinc aluminum gallium oxide (ZAGO) multivariant oxide, adopt sandwich structure design during sputtering thin film, be applied to non-crystalline silicon and the photronic nesa coating of CIGS thin film.First at the zinc aluminum gallium oxide film of glass (healthy and free from worry 7095) first sputter 10-75nm, the then silver alloy film of sputter 5-15nm, finally at the zinc aluminum gallium oxide film of sputter 10-75nm, forms the film of sandwich structure.Adopt the mode of injection forming, self-control zinc aluminum gallium oxide target controlled oxidization aluminium content is at 0.1-5.0wt%, and add gallium oxide content at 0.1-5.0wt%, use zirconia ball, pure water and dispersion agent grinding be the relevant aluminum oxide of mixing fully, gallium oxide, the powdered materials such as zinc oxide, powder weight: zirconia ball weight: water weight: dispersion agent weight=1:3.0:0.25:0.02, dispersion agent is metal carboxylate dispersion agent, milling time about 24 hours, then slurry is poured in the porousness mould of three cun, dry rear demoulding through after a while forms the low density idiosome of ternary oxide mixing, then through the high temperature sintering of 1400-1550 DEG C, sputter high-density target idiosome can be formed, become self-control zinc aluminum gallium oxide (ZAZO) target of three cun with surface grinding through cutting.The preparation of silver alloys target uses cycle stove, dissolves fine silver, a pure titanium and fine copper material, be then cast in cast iron die for subsequent use at the target being processed into 3 cun of Ag-0.5Ti-1.0Cu at 1100 DEG C.First glass substrate, silver-colored titanium copper target and zinc aluminum gallium oxide target are put into vacuum splashing and plating machine (Taiwan north scholar science and technology), sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then first with the zinc aluminum gallium oxide film that DC power supply sputter the first layer 10-75nm is thick, then with the silver-colored titanium copper film that DC power supply sputter second layer 5-15nm is thick, finally with the zinc aluminum gallium oxide film that DC power supply sputter third layer 10-75nm is thick, namely required Glass/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, initiate the Coating Materials of beginning with zinc aluminum gallium oxide (ZAGO) multivariant oxide, adopt sandwich structure design during sputtering thin film, be applied to non-crystalline silicon and the photronic nesa coating of CIGS thin film.First the zinc aluminum gallium oxide film of first sputter 10-75nm above PET, the then pure silver alloy film of sputter 5-15nm, finally at the zinc aluminum gallium oxide film of sputter 10-75nm, forms the film of sandwich structure.Adopt the mode of injection forming, self-control zinc aluminum gallium oxide target controlled oxidization Theil indices is at 0.1-5.0wt% aluminum oxide, and add gallium oxide content at 0.1-5.0wt%, use zirconia ball, pure water and dispersion agent grinding be the relevant aluminum oxide of mixing fully, gallium oxide, the powdered materials such as zinc oxide, powder weight: zirconia ball weight: water weight: dispersion agent weight=1:3.0:0.25:0.02, dispersion agent is metal carboxylate dispersion agent, milling time about 24 hours, then slurry is poured in porousness mould, dry rear demoulding through after a while forms the low density idiosome of ternary oxide mixing, then through the high temperature sintering of 1400-1550 DEG C, sputter high-density target idiosome can be formed, become zinc aluminum gallium oxide (ZAGO) target of size 700x100x6mm with surface grinding through cutting.The preparation of fine silver target uses cycle stove, dissolves a fine silver material, be then cast in cast iron die for subsequent use at the target being processed into size 700x100x6mm at 1100 DEG C.Sputter cavity background pressure is evacuated to 0.7 × 10 by sputtering machine (the diligent friend's science and technology in Taiwan), the vacuum-pumping system of first PET, fine silver target and zinc aluminum gallium oxide (ZAGO) target being put into vacuum volume to volume
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, PET do not heat.Then first with the zinc aluminum gallium oxide film that DC power supply sputter the first layer 10-75nm is thick, then with the fine silver film that DC power supply sputter second layer 5-15nm is thick, finally with the zinc aluminum gallium oxide film that DC power supply sputter third layer 10-75nm is thick, namely required PET/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, initiate the Coating Materials of beginning with zinc aluminum gallium oxide (ZAGO) multivariant oxide, adopt sandwich structure design during sputtering thin film, be applied to non-crystalline silicon and the photronic nesa coating of CIGS thin film.First the zinc aluminum gallium oxide film of first sputter 10-75nm above PET, the then silver alloy film of sputter 5-15nm, finally at the zinc aluminum gallium oxide film of sputter 10-75nm, forms the film of sandwich structure.Adopt the mode of injection forming, self-control zinc aluminum gallium oxide target controlled oxidization aluminium content is at 0.1-5.0wt% stannic oxide, and add gallium oxide content at 0.1-5.0%, use zirconia ball, pure water and dispersion agent grinding be the relevant aluminum oxide of mixing fully, gallium oxide, the powdered materials such as zinc oxide, powder weight: zirconia ball weight: water weight: dispersion agent weight=1:3.0:0.25:0.02, dispersion agent is metal carboxylate dispersion agent, milling time about 24 hours, then slurry is poured in porousness mould, dry rear demoulding through after a while forms the low density idiosome of ternary oxide mixing, then through the high temperature sintering of 1400-1550 DEG C, sputter high-density target idiosome can be formed, become zinc aluminum gallium oxide (ZAGO) target of size 700x100x6mm with surface grinding through cutting.The preparation of silver alloys target uses cycle stove, dissolves fine silver and a titanium material, be then cast in cast iron die for subsequent use at the Ag-0.5Ti target being processed into size 700x100x6mm at 1100 DEG C.Sputter cavity background pressure is evacuated to 0.7 × 10 by sputtering machine (the diligent friend's science and technology in Taiwan), the vacuum-pumping system of first PET, silver-colored titanium target and zinc aluminum gallium oxide target being put into vacuum volume to volume
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, PET do not heat.Then first with the zinc aluminum gallium oxide film that DC power supply sputter the first layer 10-75nm is thick, then with the silver-colored titanium film that DC power supply sputter second layer 5-15nm is thick, finally with the zinc aluminum gallium oxide film that DC power supply sputter third layer 10-75nm is thick, namely required PET/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, initiate the Coating Materials of beginning with zinc aluminum gallium oxide (ZAGO) multivariant oxide, adopt sandwich structure design during sputtering thin film, be applied to non-crystalline silicon and the photronic nesa coating of CIGS thin film.First the zinc aluminum gallium oxide film of first sputter 10-75nm above PET, then the fine silver of sputter 5-15nm or silver alloy film, finally at the zinc aluminum gallium oxide film of sputter 10-75nm, form the film of sandwich structure.Adopt the mode of injection forming, self-control zinc aluminum gallium oxide target controlled oxidization aluminium content is at 0.1-5.0wt%, and add gallium oxide content at 0.1-5.0%, use zirconia ball, pure water and dispersion agent grinding be the relevant aluminum oxide of mixing fully, gallium oxide, the powdered materials such as zinc oxide, milling time about 24 hours, then slurry is poured in porousness mould, dry rear demoulding through after a while forms the low density idiosome of ternary oxide mixing, then through the high temperature sintering of 1400-1550 DEG C, sputter high-density target idiosome can be formed, become zinc aluminum gallium oxide (ZAGO) target of size 700x100x6mm with surface grinding through cutting.The preparation of silver alloys target uses cycle stove, dissolves fine silver, a titanium and copper material, be then cast in cast iron die for subsequent use at the Ag-0.5Ti-1.0Cu target being processed into size 700x100x6mm at 1100 DEG C.Sputter cavity background pressure is evacuated to 0.7 × 10 by sputtering machine (the diligent friend's science and technology in Taiwan), the vacuum-pumping system of first PET, silver-colored titanium copper target and zinc aluminum gallium oxide target being put into vacuum volume to volume
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, PET do not heat.Then first with the zinc aluminum gallium oxide film that DC power supply sputter the first layer 10-75nm is thick, then with the silver-colored titanium copper film that DC power supply sputter second layer 5-15nm is thick, finally with the zinc aluminum gallium oxide film that DC power supply sputter third layer 10-75nm is thick, namely required PET/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Feature of the present invention is in the process preparing novel conductive zinc aluminum gallium oxide material and film, initiate the Coating Materials of beginning with zinc aluminum gallium oxide (ZAGO) multivariant oxide, to arrange in pairs or groups during sputtering thin film the silver in middle layer or silver alloy film, go into the multilayer film structure design of sandwich, be applied to non-crystalline silicon and the photronic nesa coating of CIGS thin film.The resistance of film is significantly reduced under suitable gauge control, and improve the transparence of film at visible ray, improve the applicability of zinc aluminum gallium oxide film in the thin film photocell such as non-crystalline silicon and CIGS, meet the requirement of production, do not use expensive Indium sesquioxide material to contribute to reducing the production cost of transparent conductive film.Due to applicable low temperature (<150 DEG C) plated film, so glass baseplate or pliability PET base material can be applied to, expand range of application.Resistance value can be reduced to 5x10
-5below Ω cm, light transmission can up to more than 85%.
Embodiment
Embodiment 1:
Prepare a method for novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first by glass substrate, fine silver target and zinc aluminum gallium oxide
(ZnO+1.0wt%Al203+1.0wt%Ga203)target puts into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, the fine silver film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 2:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, fine silver target and zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, the fine silver film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that third layer 70nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 3:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, fine silver titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ITZO/AgTi/ITZO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 4:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ITZO/AgTiCu/ITZO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 5:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, the Ag films that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 6:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, the Ag films that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that third layer 70nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 7:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 8:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+1.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 9:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver (Ag) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 10:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, silver (Ag) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 70nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 11:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 12:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 13:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, fine silver target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, the fine silver film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 14:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, fine silver target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, the fine silver film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 70nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 15:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, fine silver titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 16:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 17:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, the Ag films that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 18:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, the Ag films that second layer 10nm is thick, the indium tin zinc oxide that third layer 70nm is thick
zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203)film, namely forms required Glass/ZAGO/Ag/ZAGO multi-layer film structure, then uses visible spectrophotometer to carry out transparence measurement, uses four-point probe resistance meter to carry out electrical measurement.
Embodiment 19:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 20:
A kind of method preparing novel conductive zinc aluminum gallium oxide film, adopt multi-layer structure design, first glass substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+3.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 21:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver (Ag) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 2:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, silver (Ag) film that second layer 10nm is thick, third layer 70nm is thick
zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203)film, namely forms required Glass/ZAGO/Ag/ZAGO multi-layer film structure, then uses visible spectrophotometer to carry out transparence measurement, uses four-point probe resistance meter to carry out electrical measurement.
Embodiment 23:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 24:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first glass substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+3.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required Glass/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 25:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, fine silver target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, base material does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, the fine silver film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required PET/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 26:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, fine silver target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, the fine silver film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 70nm is thick, namely required PET/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 27:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, fine silver titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required PET/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 28:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+1.0wt%Ga203) film that third layer 45nm is thick, namely required PET/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 29:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, silver (Ag) target and Indium sesquioxide zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, the Ag films that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required PET/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 30:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, silver (Ag) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 70nm is thick, the Ag films that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 70nm is thick, namely required PET/ZAGO/Ag/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 31:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, silver-colored titanium (Ag-0.5Ti) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium (Ag-0.5Ti) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required PET/ZAGO/AgTi/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Embodiment 32:
A kind of method preparing novel conductive zinc aluminum gallium oxide material and film, adopt multi-layer structure design, first pet substrate, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) target and zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, substrate does not heat.Then with zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that DC power supply order sputter the first layer 45nm is thick, silver-colored titanium copper (Ag-0.5Ti-1.0Cu) film that second layer 10nm is thick, zinc aluminum gallium oxide (ZnO+2.0wt%Al203+3.0wt%Ga203) film that third layer 45nm is thick, namely required PET/ZAGO/AgTiCu/ZAGO multi-layer film structure is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Comparative example 1:
Prepare the method for electric conductive oxidation zinc-aluminium target in prior art, aluminum oxide 2wt% will be added in zinc oxide, use the mode of cold isostactic pressing and 1500 DEG C of high temperature sinterings to make base substrate, be then processed into target.First by glass substrate and zinc oxide aluminum
(ZnO+2wt%Al2O3)target puts into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc oxide aluminum (ZnO+2wt%Al2O3) film that DC power supply sputter one deck 100nm is thick, namely the film structure of required Glass/ZAO is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
Comparative example 2:
Prepare the method for electric conductive oxidation zinc-aluminium target in prior art, aluminum oxide 2wt% will be added in zinc oxide, use the mode of cold isostactic pressing and 1500 DEG C of high temperature sinterings to make base substrate, be then processed into target.First pet substrate and zinc oxide aluminum (ZnO+2wt%Al2O3) target are put into vacuum splashing and plating machine, sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.Then with zinc oxide aluminum (ZnO+2wt%Al2O3) film that DC power supply sputter one deck 100nm is thick, namely the film structure of required Glass/ZAO is formed, then use visible spectrophotometer to carry out transparence measurement, use four-point probe resistance meter to carry out electrical measurement.
The performance of the transparent conductive zinc oxide gallium aluminium film that each embodiment and comparative example obtain is as shown in the table:
As can be seen from upper table result, the new composition zinc aluminum gallium oxide target that the filling forming method that the present invention adopts is obtained, via the multi-layer film structure that vacuum splashing and plating is made, high-transmittance is held via suitable gauge control Neng Gou Victoria, the interpolation of intermediate metal layer significantly reduces resistance, do not use Indium sesquioxide material to reduce the price of nesa coating, meet the performance requriements of non-crystalline silicon and CIGS thin film photocell transparency electrode and wire.
Claims (7)
1. prepare a method for novel conductive zinc aluminum gallium oxide material and film, it is characterized in that: the quality of alumina fractional content of described zinc aluminum gallium oxide target is 1
-3wt%, the massfraction content 1 of gallium oxide
-3wt%, surplus is zinc oxide; Zirconia ball, pure water and dispersion agent is used to grind abundant mixed aluminium oxides, gallium oxide, oxide powder and zinc powder material, milling time 24 hours, then slurry is poured in the porousness mould of three cun, the low density idiosome of ternary oxide mixing is formed through super-dry rear demoulding, then through the high temperature sintering of 1400-1550 DEG C, sputter high-density target idiosome can be formed;
Film-forming process: adopt sandwich structure during sputtering thin film, first the zinc aluminum gallium oxide film of first sputter 15-25nm on glass or pliability pet substrate, then the silver of sputter 8-10nm or silver alloy film, finally at the zinc aluminum gallium oxide film of sputter 15-25nm, form the film of sandwich structure, make film forming sputtering film under <150 DEG C of state.
2. a kind of method preparing novel conductive zinc aluminum gallium oxide material and film according to claim 1, is characterized in that mass ratio is: aluminum oxide, gallium oxide and Zinc oxide powder weight: zirconia ball weight: water weight: dispersion agent weight=1:3.0:0.25:0.02.
3. a kind of method preparing novel conductive zinc aluminum gallium oxide material and film according to claim 1, is characterized in that dispersion agent is metal carboxylate dispersion agent.
4. a kind of method preparing novel conductive zinc aluminum gallium oxide material and film according to claim 1, is characterized in that the preparation of fine silver target uses cycle stove, dissolves a fine silver material at 1100 DEG C, is then cast in cast iron die to be processed into target for subsequent use.
5. a kind of method preparing novel conductive zinc aluminum gallium oxide material and film according to claim 1, it is characterized in that: glass or pet substrate, fine silver target and zinc aluminum gallium oxide target are put into vacuum splashing and plating machine, and sputter cavity background pressure is evacuated to 0.7 × 10 by vacuum-pumping system
-5-0.9 × 10
-5after torr, utilizing argon gas to be used as working gas, is 2 × 10 through throttling valve by the operating pressure passing into argon gas and control sputter cavity
-3torr, glass substrate does not heat.
6. a kind of method preparing novel conductive zinc aluminum gallium oxide material and film according to claim 1, is characterized in that: silver alloys is Ag-0.5Ti or Ag-0.5Ti-1.0Cu.
7. a kind of method preparing novel conductive zinc aluminum gallium oxide material and film according to claim 1, is characterized in that: described zinc aluminum gallium oxide target most preferably quality of alumina fractional content 1
.5wt%, the massfraction content 1.5 of gallium oxide
wt%, surplus is zinc oxide.
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| CN1665678A (en) * | 2002-05-08 | 2005-09-07 | 目标技术有限公司 | Silver alloy thin film reflector and transparent electrical conductor |
| CN103205707A (en) * | 2013-04-24 | 2013-07-17 | 研创应用材料（赣州）有限公司 | Preparation method of novel conductive oxide targets and conductive oxide thin-films |
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| CN1257135A (en) * | 1999-12-23 | 2000-06-21 | 复旦大学 | Metal indium-stannic oxide compound transparent electricity conductive film and preparation process thereof |
| CN1665678A (en) * | 2002-05-08 | 2005-09-07 | 目标技术有限公司 | Silver alloy thin film reflector and transparent electrical conductor |
| CN103205707A (en) * | 2013-04-24 | 2013-07-17 | 研创应用材料（赣州）有限公司 | Preparation method of novel conductive oxide targets and conductive oxide thin-films |
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