CN103475215B - Boost configuration and feedback circuit thereof - Google Patents
Boost configuration and feedback circuit thereof Download PDFInfo
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- CN103475215B CN103475215B CN201210184810.8A CN201210184810A CN103475215B CN 103475215 B CN103475215 B CN 103475215B CN 201210184810 A CN201210184810 A CN 201210184810A CN 103475215 B CN103475215 B CN 103475215B
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Abstract
The invention provides a kind of boost configuration and feedback circuit thereof, described feedback circuit comprises: isolated transmission module, receives the output voltage of described boosting main body circuit output and transmits it; First nmos pass transistor, its grid receives the input voltage of described boosting main body circuit input, its source electrode is connected with body electrode and receives the output voltage that described isolated transmission module transmits, and its drain electrode produces control signal and transmits it to the control end of described boosting main body circuit.The present invention significantly can simplify circuit, improves response speed.
Description
Technical field
The present invention relates to a kind of boost configuration and feedback circuit thereof.
Background technology
In the field such as Switching Power Supply and LED drive circuit, there is a kind of boosting (boost) structure, when starting, constrained input being directly communicated with, after output potential is close to input current potential, direct connection model removes, and Switching Power Supply begins operating in normal on off state.
The method controlling direct connection model in the custom circuit of prior art is to output voltage sampling, compares, and control according to comparative result with input voltage.Fig. 1 shows the structured flowchart of a kind of boost configuration of the prior art, comprise: boosting (boost) direct circuit 101 and coupled output sampling and control circuit 102, the output voltage Vout exporting sampling and control circuit 102 pairs of boost direct circuits 101 samples, and compare with input voltage vin, according to comparative result, boost direct circuit 101 is controlled, make when starting, constrained input to be directly communicated with, after output voltage Vout is close to input voltage vin, remove being directly communicated with.It is under sample circuit self needs to be operated in certain voltage that the shortcoming of such scheme mainly contains 2: the first, and the application of boost structure to determine input voltage lower, so the sample circuit structure under causing low voltage situations is more complicated, poor reliability; Second is cause response speed slow because circuit structure is more complicated.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of boost configuration and feedback circuit thereof, significantly can simplify circuit, improves response speed.
For solving the problems of the technologies described above, the invention provides a kind of feedback circuit, being configured to be coupled with the main body circuit that boosts, comprising:
Isolated transmission module, receives the output voltage of described boosting main body circuit output and transmits it;
First nmos pass transistor, its grid receives the input voltage of described boosting main body circuit input, its source electrode is connected with body electrode and receives the output voltage that described isolated transmission module transmits, and its drain electrode produces control signal and transmits it to the control end of described boosting main body circuit.
Alternatively, described control signal controls described boosting main body circuit and is directly communicated with output by described input when starting, and removes described input and be communicated with direct between output after described output voltage is close to described input voltage.
Alternatively, described isolated transmission module comprises:
Second nmos pass transistor, its grid receives the input voltage of described boosting main body circuit input, and its drain electrode receives the output voltage of described boosting main body circuit output, and its source electrode is connected with the source electrode of body electrode with described first nmos pass transistor.
Alternatively, described isolated transmission module comprises:
Transmission gate, its control end receives the input voltage of described boosting main body circuit input, and its input receives the output voltage of described boosting main body circuit output, and its output connects the source electrode of described first nmos pass transistor.
Present invention also offers a kind of boost configuration, the boosting main body circuit comprising the feedback circuit described in above-mentioned any one and be coupled with it.
Compared with prior art, the present invention has the following advantages:
In the feedback circuit of the embodiment of the present invention, isolated transmission module is adopted the source electrode of the first nmos pass transistor and output voltage to be isolated, and output voltage is passed to the first nmos pass transistor, first nmos pass transistor produces the output state of bulk effect switch-over control signal, thus input is directly communicated with output or the direct connection between the two is removed by control boosting main body circuit.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of a kind of boost configuration of the prior art;
Fig. 2 is the structured flowchart of the boost configuration of the embodiment of the present invention;
Fig. 3 is the detailed circuit diagram of the feedback circuit of the embodiment of the present invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described, but should not limit the scope of the invention with this.
Fig. 2 shows the structured flowchart of the boost configuration of the present embodiment, the feedback circuit 202 comprising boosting main body circuit 201 and be coupled with it.
Wherein, under the control of the control signal control that boosting main body circuit 201 exports at feedback circuit 202, when starting, input is directly communicated with output, in other words, when starting, input voltage vin is much smaller than output voltage Vout, and the output of the main body circuit 201 that now boosts directly is communicated with input; After output voltage Vout is close to input voltage vin, boosting main body circuit 201 removes the direct connection between input and output under the control of control signal control.Boosting main body circuit 201 can adopt structure same as the prior art.
Herein, output voltage Vout refers to output voltage close to input voltage vin and increases to equal with input voltage vin gradually, it will be appreciated by those skilled in the art that, " equal " should be understood to the numerical value of the two in error allowed band.
Feedback circuit 202 comprises isolated transmission module 30 and the first nmos pass transistor M1.Wherein, isolated transmission module 30 receives the output voltage Vout of boosting main body circuit 201 output and transmits it.The grid of the first nmos pass transistor M1 receives the input voltage vin of boosting main body circuit 201 input, its source electrode is connected with body electrode and receives the output voltage Vout that isolated transmission module 30 transmits, and its drain electrode produces control signal control and transmits it to the control end of boosting main body circuit 201.
In the present embodiment, isolated transmission module 30 comprises: the second nmos pass transistor M2, its grid receives the input voltage vin of boosting main body circuit 201 input, its drain electrode receives the output voltage Vout of boosting main body circuit 201 output, and its source electrode is connected with the source electrode of body electrode with the first nmos pass transistor M1.
In the course of the work, when output voltage Vout is less than input voltage vin, the second nmos pass transistor M2 conducting, the first nmos pass transistor M1 conducting, control signal control is electronegative potential; When output voltage Vout is close to input voltage vin, the second nmos pass transistor M2 conducting, the first nmos pass transistor M1 is weak conducting state because bulk effect is in, and control signal control is high potential, but output resistance now increases; When output voltage Vout is higher than input voltage vin, second nmos pass transistor M2 conducting, first nmos pass transistor M1 is less than 0 due to gate source voltage Vgs and turns off, control signal control is made to be high-impedance state, just in time reach the object decontroled and control, pulse-width modulation (PWM) signal that ensuing control can be produced by other modules is to control the gate capacitance of power tube.
By upper, in the present embodiment, carried out the output state of switch-over control signal control by the bulk effect of the first nmos pass transistor M1, after output voltage Vout is close to input voltage vin, direct connection model removes, and begins operating in normal on off state.The source electrode of the first nmos pass transistor M1 and output voltage Vout then can be kept apart by isolated transmission module 30, high potential or electronegative potential are passed to the first nmos pass transistor M1 simultaneously, carried out the output state of switch-over control signal control by the bulk effect of the first nmos pass transistor M1.Compared with controlling with adopting special control logic in prior art whether to be directly communicated with, significantly simplifying circuit, improve response speed.
In addition, according to the difference of specific embodiment, isolated transmission module 30 can also adopt other suitable structures, such as can adopt transmission gate to realize, its control end receives the input voltage of boosting main body circuit input, its input receives the output voltage of boosting main body circuit output, and its output connects the source electrode of the first nmos pass transistor.
The boost configuration of the present embodiment and feedback circuit thereof can be applied in the field such as Switching Power Supply, LED drive circuit.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (5)
1. a feedback circuit, is configured to be coupled with the main body circuit that boosts, it is characterized in that, comprising:
Isolated transmission module, receives the output voltage of described boosting main body circuit output and transmits it;
First nmos pass transistor, its grid receives the input voltage of described boosting main body circuit input, its source electrode is connected with body electrode and receives the output voltage that described isolated transmission module transmits, and its drain electrode produces control signal and transmits it to the control end of described boosting main body circuit.
2. feedback circuit according to claim 1, it is characterized in that, described control signal controls described boosting main body circuit and is directly communicated with output by described input when starting, after described output voltage is close to described input voltage, remove described input be communicated with direct between output, wherein, described output voltage refers to described output voltage close to described input voltage and increases to gradually with the numerical value of described input voltage in error allowed band.
3. feedback circuit according to claim 1 and 2, is characterized in that, described isolated transmission module comprises:
Second nmos pass transistor, its grid receives the input voltage of described boosting main body circuit input, and its drain electrode receives the output voltage of described boosting main body circuit output, and its source electrode is connected with the source electrode of body electrode with described first nmos pass transistor.
4. feedback circuit according to claim 1 and 2, is characterized in that, described isolated transmission module comprises:
Transmission gate, its control end receives the input voltage of described boosting main body circuit input, and its input receives the output voltage of described boosting main body circuit output, and its output connects the source electrode of described first nmos pass transistor.
5. a boost configuration, the boosting main body circuit comprising the feedback circuit according to any one of Claims 1-4 and be coupled with it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210184810.8A CN103475215B (en) | 2012-06-06 | 2012-06-06 | Boost configuration and feedback circuit thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210184810.8A CN103475215B (en) | 2012-06-06 | 2012-06-06 | Boost configuration and feedback circuit thereof |
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| Publication Number | Publication Date |
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| CN103475215A CN103475215A (en) | 2013-12-25 |
| CN103475215B true CN103475215B (en) | 2016-03-30 |
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| CN201210184810.8A Active CN103475215B (en) | 2012-06-06 | 2012-06-06 | Boost configuration and feedback circuit thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1779861A (en) * | 2004-11-24 | 2006-05-31 | 上海华虹Nec电子有限公司 | Word Line Boost Circuit for Low Voltage Non-Volatile Memory |
| CN101938212A (en) * | 2009-07-01 | 2011-01-05 | 瑞萨电子(中国)有限公司 | Low-voltage start-up circuit and boost converter |
| CN102035385A (en) * | 2010-12-29 | 2011-04-27 | 苏州华芯微电子股份有限公司 | Voltage switching circuit |
| CN102332825A (en) * | 2010-07-13 | 2012-01-25 | 安凯(广州)微电子技术有限公司 | DC-DC converter control circuit and converter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3556652B2 (en) * | 2002-09-27 | 2004-08-18 | 日本テキサス・インスツルメンツ株式会社 | DC-DC converter |
-
2012
- 2012-06-06 CN CN201210184810.8A patent/CN103475215B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1779861A (en) * | 2004-11-24 | 2006-05-31 | 上海华虹Nec电子有限公司 | Word Line Boost Circuit for Low Voltage Non-Volatile Memory |
| CN101938212A (en) * | 2009-07-01 | 2011-01-05 | 瑞萨电子(中国)有限公司 | Low-voltage start-up circuit and boost converter |
| CN102332825A (en) * | 2010-07-13 | 2012-01-25 | 安凯(广州)微电子技术有限公司 | DC-DC converter control circuit and converter |
| CN102035385A (en) * | 2010-12-29 | 2011-04-27 | 苏州华芯微电子股份有限公司 | Voltage switching circuit |
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| CN103475215A (en) | 2013-12-25 |
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Effective date of registration: 20210107 Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: 201103 10th floor, building 1, No.100 Zixiu Road, Minhang District, Shanghai Patentee before: CHINA RESOURCES POWTECH (SHANGHAI) Co.,Ltd. |
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