CN103474322B - Dry etching equipment and lithographic method - Google Patents
Dry etching equipment and lithographic method Download PDFInfo
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- CN103474322B CN103474322B CN201310450519.5A CN201310450519A CN103474322B CN 103474322 B CN103474322 B CN 103474322B CN 201310450519 A CN201310450519 A CN 201310450519A CN 103474322 B CN103474322 B CN 103474322B
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- pallet
- spacer pin
- dry etching
- etched
- etching equipment
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of dry etching equipment and lithographic method, relate to etching apparatus technical field.Dry etching equipment of the present invention includes the pallet for placing at least one part that is etched, the etch unit for performing etching at least one part that is etched described, the housing housing described pallet and the vacuum generator being connected with shown housing, described pallet is provided with least one set for limiting the spacer pin of at least one part position that is etched described.Owing to the part that is etched is carried out spacing by spacer pin by the pallet in dry etching equipment of the present invention, extend the service life of pallet；And eliminate the defect that tray slots in traditional method is deepened to reprocess, reduce engineering cost.
Description
Technical field
The present invention relates to etching apparatus technical field, more particularly, it relates to a kind of dry etching equipment and
Lithographic method.
Background technology
In the fields such as optic communication, microelectronics, semiconductor lighting, MEMS, photovoltaic industry, dry
Method etching is an important processing step.As a example by optic communication, China's broadband access in recent years and optical fiber arrive
The development at family makes the demand of planar optical waveguide chip product surge.Planar optical waveguide is fiber waveguide to be made
Technology on planar substrates, is to realize optic communication Large Copacity and the integrated effective means of optical device.Flat
Face waveguide can make array waveguide grating, optical branching device, multichannel adjustable optical attenuator, photoswitch etc.
Optical device.In the middle of optical communication network, optical signal relies on the array waveguide grating quilt that planar optical waveguide is made
It is widely used for realizing wavelength-division multiplex to improve efficiency of transmission.At the least significant end of optic communication, the fiber to the home stage,
Planar optical waveguide light splitter then provides current maximally effective EPON Broadband Access Scheme.Dry method
Etching, i.e. uses aneroid method to etch the microcosmos pattern meeted the requirements on wafer, is to produce to put down
One of important step of face waveguide core flake products.
Graphite is owing to having good thermal stability, electric conductivity, heat conductivity, resistance to sudden heating, chemically-resistant corruption
Erosion property, low wellability and good mechanical strength etc., use graphite pallet mostly in etching process at present
Wafer is carried out support, and according to the different size of wafer, groove is set in graphite pallet to place wafer.
In etching apparatus, due to corrasion, the groove of graphite pallet can shoal in etching process,
After a period of time, the most shallow placement wafer that is not enough to of groove can make wafer skid off outside groove, thus causes product
Scrap.Prior art, by pallet is carried out reworking, to deepen the degree of depth of groove, is continuing with this
Pallet；When graphite pallet is reprocessed, it is necessary to meet the surface smoothness of graphite tray slots, table
The requirements such as face fineness and face coat.This pallet cost is the highest, again makes deepening the method for groove
With this pallet not only procedure of processing is cumbersome, processing charges is high, also can reduce pallet and use the time, enter one
Step increases cost.
On the other hand, in addition to dry etching, chip production also has long membrane process, i.e. on wafer
Deposit specific film substrate.Long film device graphite support to be used folds support effect.And existing
Groove design in, the film layer being grown in groove edge is not easily cleaned, also can be to pallet while cleaning
Edge cause abrasion.
Summary of the invention
The technical problem to be solved in the present invention is, it is provided that one can eliminate tray slots in traditional method and add
The dry etching equipment of the defect deeply need to reprocessed and lithographic method.
The technical solution adopted for the present invention to solve the technical problems is: a kind of dry etching equipment of structure,
Including the pallet for placing at least one part that is etched, at least one part that is etched described is carried out
Etch unit, the housing housing described pallet and the vacuum generator being connected with described housing of etching,
Least one set is installed for limiting the spacer pin of at least one part position that is etched described on described pallet.
Preferably, in above-mentioned dry etching equipment, described least one set spacer pin is removably installed in institute
State on tray surface.
Preferably, in above-mentioned dry etching equipment, described tray surface is provided with for respectively for described
Multiple spacing holes that least one set spacer pin is planted.
Preferably, in above-mentioned dry etching equipment, described least one set spacer pin is vertically installed in described torr
Panel surface.
Preferably, in above-mentioned dry etching equipment, described least one set spacer pin includes organizing spacer pin more,
Each group of spacer pin includes the spaced apart spacer pin of at least three.
Preferably, in above-mentioned dry etching equipment, the part adjacent sets spacer pin in this many groups spacer pin is altogether
Use one or more spacer pin.
Preferably, in above-mentioned dry etching equipment, described pallet is graphite pallet.
Preferably, in above-mentioned dry etching equipment, described dry etching equipment is that wafer dry etching sets
Standby, described in the part that is etched be wafer.
A kind of dry etching method, comprises the following steps:
A, one pallet of offer；
B, described tray surface install in order to the least one set spacer pin limiting at least one part that is etched；
C, at least one part that is etched described is positioned over described tray surface, and it is spacing to be positioned at least one set
Between pin, described least one set spacer pin it is limited on described tray surface；
D, described pallet is positioned over connects and have the housing of vacuum generator in, open described vacuum generator,
From top to bottom at least one part that is etched described is carried out dry etching by etch unit.
Preferably, in above-mentioned dry etching method, described pallet is graphite pallet, at least one quilt described
Etching part is wafer.
The invention has the beneficial effects as follows: owing to the pallet in dry etching equipment of the present invention is by spacer pin pair
The part that is etched carries out spacing, extends the service life of pallet；And it is recessed to eliminate pallet in traditional method
Groove deepens the defect that need to reprocess, and reduces engineering cost.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the dry etching equipment structural representation of one embodiment of the invention；
Fig. 2 be one embodiment of the invention dry etching equipment in the detonation configuration of spacer pin and pallet show
It is intended to；
Fig. 3 be one embodiment of the invention dry etching equipment in the structural representation of pallet；
Fig. 4 be another embodiment of the present invention dry etching equipment in the structural representation of pallet.
Detailed description of the invention
In order to the technical characteristic of the present invention, purpose and effect are more clearly understood from, now compare accompanying drawing
Describe the detailed description of the invention of the present invention in detail.
Fig. 1 shows the dry etching equipment in a preferred embodiment of the invention, can be applicable to optic communication
The etching process of technology midplane chip of light waveguide.This dry etching equipment includes for placing at least one
Be etched the pallet 1 of part 3, the etch unit for performing etching at least one part 3 that is etched, collecting
The housing of pallet 1 and the vacuum generator being connected with housing, pallet 1 is provided with least one set limit
The spacer pin 2 of at least one part 3 position that is etched fixed.In dry etching equipment, to being etched, part 3 enters
During row etching, by spacer pin 2, the part 3 that is etched is carried out spacing, it is not necessary to processing groove is to place quilt
Etching part 3, thus extend the service life of pallet 1；And eliminate tray slots in traditional method to deepen
The defect that need to reprocess, can reduce processing cost while extending the service life of pallet 1.
It is to be appreciated that the pallet in this dry etching equipment apply also for optic communication, microelectronics, half
In the chip product manufacturing process in the fields such as conductor illumination, MEMS, photovoltaic.
As shown in Figure 1 and Figure 2, this least one set spacer pin 2 is removably installed on pallet 1 surface.
In etching apparatus, when cannot limit under spacer pin 2 is in corrasion be etched part 3 time, only need change
Spacer pin 2 can limit the part 3 that is etched again.In further embodiments, removable in long film device
The spacer pin 2 unloaded can clear up the film layer on pallet 1 easily.
In certain embodiments, as it is shown in figure 1, this least one set spacer pin 2 is vertically installed in pallet 1
Surface.The part 3 that is etched can be put to pallet 1 surface by vertically disposed spacer pin 2 easily.
In certain embodiments, as it is shown on figure 3, this least one set spacer pin 2 includes organizing spacer pin 2 more,
Each group of spacer pin 2 includes the spaced apart spacer pin of at least three 2.
In certain embodiments, as shown in Figure 4, the part adjacent sets spacer pin 2 in this many groups spacer pin 2
Share one or more spacer pin 2.The spacer pin 2 of adjacent sets shares one or more limit
Position pin 2 not only can save the usage quantity of spacer pin 2, it is also possible to increases and places the part 3 that is etched on pallet 1
Quantity, reduce cost.
In certain embodiments, spacer pin 2 is graphite spacer pin, metal spacing pin or carborundum spacer pin.
Owing to spacer pin 2 compartment of terrain is arranged in around the part 3 that is etched to limit the part 3 that is etched, it is not completely covered
Be etched the periphery of part 3, so not interfering with when alignment pin 2 uses graphite, metal or carbofrax material
The heat stability of pallet 1, electric conductivity etc..
In certain embodiments, this spacer pin 2 cross section can rounded, triangle or tetragon etc..Can
To understand ground, the shape of cross section of spacer pin 2 is not limiting as, and can make in arbitrary shape according to actual needs
Shape.
In certain embodiments, as in figure 2 it is shown, pallet 1 surface is formed for respectively for least one set
Multiple spacing holes 11 that spacer pin 2 is planted.The geomery of these spacing holes 11 and these spacer pins 2
Geomery is suitable.
In certain embodiments, pallet 1 is graphite pallet.
In certain embodiments, this dry etching equipment is wafer dry etching equipment, and be etched part 3
For wafer.Preferably, this wafer is optic communication planar optical waveguide wafer.
In dry etching equipment, before wafer is performed etching, pallet 1 is processed to form multiple spacing hole
11, now the height of pallet will not change.Then wafer is positioned over tray surface, is positioned at spacing
Between pin, spacer pin 2 wafer is limited on pallet, from top to bottom wafer is carried out dry etching.
During etching, effect that the pallet 1 not covered by wafer and spacer pin 2 also can be etched simultaneously and become
Shallow；After a period of time, when the height of spacer pin 2 cannot limit the position of wafer, by spacer pin 2 from torr
Dismantle on dish, and change new spacer pin 2, can again perform etching work.Until not covered by wafer
Pallet 1 be depleted, pallet 1 service life can be greatly prolonged.And when changing spacer pin 2 not
Need the pallet 1 to placing wafer to carry out reworking, processing work can be reduced, reduce processing cost.
In long film device, owing to spacer pin 2 is removable installed on pallet 1, at needs to pallet 1
When clearing up, spacer pin 2 is pulled down, can be respectively to the film layer on spacer pin 2 and this pallet 1
Clear up, reduce cleaning difficulty.In long film device, the design of this pallet can make pallet clear up more
Easily, service life is longer.
A kind of dry etching method, comprises the following steps:
A, one pallet 1 of offer；
B, described pallet 1 surface install spacing in order to limit the least one set of at least one part 3 that is etched
Pin 2；
C, at least one part 3 that is etched described is positioned over described pallet 1 surface, and is positioned at least one set
Between spacer pin 2, described least one set spacer pin 2 it is limited on described pallet 1 surface；
D, described pallet 1 is positioned over connects and have the housing of vacuum generator in, open described vacuum and occur
Device, carries out dry etching at least one part 3 that is etched described from top to bottom by etch unit.
When spacer pin 2 consumes height step-down under corrasion, change spacer pin 2 and carved to redefine
The position of erosion part 3.
It is to be appreciated that etch unit includes radio-frequency power supply equipment and is passed through etching gas Jie in housing
The gas control equipment of matter.
The foregoing is only the preferred embodiments of the present invention, not in order to limit the present invention, all in the present invention
Spirit and principle in any amendment, equivalent or the improvement etc. made, should be included in the present invention's
In protection domain.
Claims (6)
1. a dry etching equipment, including the pallet (1) for placing at least one part that is etched (3), is used for
The etch unit that at least one part that is etched (3) described is performed etching, the shell housing described pallet (1)
Body and the vacuum generator being connected with described housing, it is characterised in that described pallet (1) is upper to be installed
There is least one set for limiting the spacer pin (2) of at least one part that is etched (3) described；Described at least one
Group spacer pin (2) is removably installed on described pallet (1) surface；Described pallet (1) surface sets
It is equipped with the multiple spacing holes (11) for planting respectively for described least one set spacer pin (2)；Described pallet
(1) it is graphite pallet.
Dry etching equipment the most according to claim 1, it is characterised in that described least one set spacer pin (2)
It is vertically installed in described pallet (1) surface.
Dry etching equipment the most according to claim 1, it is characterised in that described least one set spacer pin (2)
Including organizing spacer pin (2) more；Organizing in spacer pin (2), each group of spacer pin (2) includes at least three more
Spaced apart spacer pin (2).
Dry etching equipment the most according to claim 3, it is characterised in that in this many groups spacer pin (2)
Part adjacent sets spacer pin (2) shares one or more spacer pin (2).
Dry etching equipment the most according to any one of claim 1 to 4, it is characterised in that described dry method is carved
Erosion equipment is wafer dry etching equipment, described in the part (3) that is etched be wafer.
6. using a dry etching method for dry etching equipment described in any one of claim 1-5, its feature exists
In, comprise the following steps:
A, one pallet (1) of offer；
B, described pallet (1) surface install in order to limit at least one part that is etched (3) least one set limit
Position pin (2)；
C, at least one part that is etched (3) described is positioned over described pallet (1) surface, and is positioned at least one
Between group spacer pin (2), described least one set spacer pin (2) it is limited in described pallet (1) surface
On；
D, described pallet (1) is positioned over connects and have the housing of vacuum generator in, open described vacuum generator,
From top to bottom at least one part that is etched (3) described is carried out dry etching by etch unit；
Described pallet (1) is graphite pallet, and at least one part that is etched (3) described is wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310450519.5A CN103474322B (en) | 2013-09-27 | 2013-09-27 | Dry etching equipment and lithographic method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310450519.5A CN103474322B (en) | 2013-09-27 | 2013-09-27 | Dry etching equipment and lithographic method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103474322A CN103474322A (en) | 2013-12-25 |
| CN103474322B true CN103474322B (en) | 2016-08-17 |
Family
ID=49799125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310450519.5A Expired - Fee Related CN103474322B (en) | 2013-09-27 | 2013-09-27 | Dry etching equipment and lithographic method |
Country Status (1)
| Country | Link |
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| CN (1) | CN103474322B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851402B (en) * | 2021-05-31 | 2024-11-15 | 京东方华灿光电(苏州)有限公司 | Pallet for plasma etcher and plasma etcher |
| CN113471134B (en) * | 2021-06-28 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Tray structure of semiconductor device and semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499411A (en) * | 2008-02-01 | 2009-08-05 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN203007478U (en) * | 2012-11-02 | 2013-06-19 | 东莞市中镓半导体科技有限公司 | Multi-cavity step-by-step processing device for vapor phase epitaxy material growth |
| CN203553097U (en) * | 2013-09-27 | 2014-04-16 | 广东尚能光电技术有限公司 | Dry etching device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3357311B2 (en) * | 1999-02-12 | 2002-12-16 | アプライド マテリアルズ インコーポレイテッド | Wafer support device in semiconductor manufacturing equipment |
| JP4997141B2 (en) * | 2008-02-21 | 2012-08-08 | 株式会社アルバック | Vacuum processing apparatus and substrate temperature control method |
| CN201859863U (en) * | 2010-11-05 | 2011-06-08 | 中美矽晶制品股份有限公司 | Wafer Carrier |
| KR20130107964A (en) * | 2012-03-23 | 2013-10-02 | 에이에스엠 아이피 홀딩 비.브이. | Deposition apparatus |
-
2013
- 2013-09-27 CN CN201310450519.5A patent/CN103474322B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499411A (en) * | 2008-02-01 | 2009-08-05 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN203007478U (en) * | 2012-11-02 | 2013-06-19 | 东莞市中镓半导体科技有限公司 | Multi-cavity step-by-step processing device for vapor phase epitaxy material growth |
| CN203553097U (en) * | 2013-09-27 | 2014-04-16 | 广东尚能光电技术有限公司 | Dry etching device |
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| Publication number | Publication date |
|---|---|
| CN103474322A (en) | 2013-12-25 |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20151231 Address after: 528251 Guangdong Province, Foshan City Nanhai Pingzhou community building A block 4 photoelectric Valley Applicant after: Sunblence Technologies Co., Ltd. Applicant after: Shenzhen Sunsea Telecommunications Co., Ltd. Address before: 528251 Guangdong Province, Foshan City Nanhai Pingzhou community building A block 4 photoelectric Valley Applicant before: Sunblence Technologies Co., Ltd. |
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Granted publication date: 20160817 Termination date: 20170927 |