CN103464853A - Method for welding conducting wires of semiconductor refrigerating plates - Google Patents
Method for welding conducting wires of semiconductor refrigerating plates Download PDFInfo
- Publication number
- CN103464853A CN103464853A CN2013104148785A CN201310414878A CN103464853A CN 103464853 A CN103464853 A CN 103464853A CN 2013104148785 A CN2013104148785 A CN 2013104148785A CN 201310414878 A CN201310414878 A CN 201310414878A CN 103464853 A CN103464853 A CN 103464853A
- Authority
- CN
- China
- Prior art keywords
- cored solder
- cut
- conducting wires
- heart yearn
- chilling plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000003466 welding Methods 0.000 title abstract description 7
- 238000005219 brazing Methods 0.000 claims abstract description 7
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000003032 molecular docking Methods 0.000 claims description 5
- 210000000689 upper leg Anatomy 0.000 claims description 5
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005057 refrigeration Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Wire Processing (AREA)
Abstract
The invention discloses a method for welding conducting wires of semiconductor refrigerating plates. The method has the advantages that the cut conducting wires are welded by means of flame brazing, so that a process is simple, the maneuverability, the production efficiency and the welding speed are high, the labor intensity, energy consumption and the cost are low, the method is easy to master, and the welding success rate can be effectively increased.
Description
Technical field
The present invention relates to the method for making semiconductor field, especially a kind of wire bonding method of semiconductor chilling plate.
Background technology
Semiconductor chilling plate, also be thermoelectric module, is a kind of heat pump.Its advantage is there is no slide unit, is applied in some spaces and is restricted, and reliability requirement is high, the occasion of polluting without cold-producing medium.Utilize the Peltier effect of semi-conducting material, when galvanic couple that direct current is connected into by two kinds of different semi-conducting materials, can absorb respectively heat at the two ends of galvanic couple and emit heat, can realize the purpose of refrigeration.It is a kind of Refrigeration Technique that produces negative thermal resistance, is characterized in movement-less part, and reliability is also higher.Utilize the mode of semiconductor refrigerating to solve the heat dissipation problem of LED illuminator, there is very high practical value.At present, because large flow deflector and the intercrystalline space of semiconductor refrigerating assembly are smaller, cause when welding, solder joint easily touches crystal grain, causes short circuit, the rosin joint phenomenon.
Therefore, need a kind of new technical scheme to address the above problem.
Summary of the invention
Goal of the invention: the problem produced in order to solve prior art the invention provides a kind of
Technical scheme: for achieving the above object, the present invention can adopt following technical scheme: a kind of wire bonding method of semiconductor chilling plate comprises the following steps:
(1) at first, wire is cut to stripping, length is 300-340mm, exposes heart yearn, and exposed length is 30-40mm; Heart yearn is twisted to thigh;
(2) the docking port position is cut into to 90 degree, without the burr otch; Add bag strong type insulating materials;
(3) adopt the technology of gas brazing to be welded: bluster adopts micro-carbon flame, and heating wires is coated with the last layer cored solder while reaching 500-600 ℃.
Further, the cored solder in described step (3) adopts cored solder HL306 or cored solder HL308.
Beneficial effect: the wire bonding method of a kind of semiconductor chilling plate disclosed in this invention, adopt the welding method of gas brazing to be welded the wire after cutting, have technique on the one hand simple, workable, labour intensity is low, easily grasp, energy consumption is low, and cost is low, the advantage that production efficiency is high, there is on the other hand speed of welding fast, effectively improve and be welded into power.
The specific embodiment
Below in conjunction with the specific embodiment, further illustrate the present invention, should understand the following specific embodiment only is not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
Embodiment 1:
A kind of wire bonding method of semiconductor chilling plate comprises the following steps:
(1) at first, wire is cut to stripping, length is 300mm, exposes heart yearn, and exposed length is 30mm; Heart yearn is twisted to thigh;
(2) the docking port position is cut into to 90 degree, without the burr otch; Add bag strong type insulating materials;
(3) adopt the technology of gas brazing to be welded: bluster adopts micro-carbon flame, and heating wires is coated with the last layer cored solder while reaching 500 ℃, and described cored solder adopts cored solder HL306.
Embodiment 2:
A kind of wire bonding method of semiconductor chilling plate comprises the following steps:
(1) at first, wire is cut to stripping, length is 340mm, exposes heart yearn, and exposed length is 40mm; Heart yearn is twisted to thigh;
(2) the docking port position is cut into to 90 degree, without the burr otch; Add bag strong type insulating materials;
(3) adopt the technology of gas brazing to be welded: bluster adopts micro-carbon flame, and heating wires is coated with the last layer cored solder while reaching 600 ℃, and described cored solder adopts cored solder HL308.
Embodiment 3:
A kind of wire bonding method of semiconductor chilling plate comprises the following steps:
(1) at first, wire is cut to stripping, length is 320mm, exposes heart yearn, and exposed length is 35mm; Heart yearn is twisted to thigh;
(2) the docking port position is cut into to 90 degree, without the burr otch; Add bag strong type insulating materials;
(3) adopt the technology of gas brazing to be welded: bluster adopts micro-carbon flame, and heating wires is coated with the last layer cored solder while reaching 550 ℃, and described cored solder adopts cored solder HL306.
Claims (2)
1. the wire bonding method of a semiconductor chilling plate is characterized in that comprising the following steps:
(1) at first, wire is cut to stripping, length is 300-340mm, exposes heart yearn, and exposed length is 30-40mm; Heart yearn is twisted to thigh;
(2) the docking port position is cut into to 90 degree, without the burr otch; Add bag strong type insulating materials;
(3) adopt the technology of gas brazing to be welded: bluster adopts micro-carbon flame, and heating wires is coated with the last layer cored solder while reaching 500-600 ℃.
2. the wire bonding method of a kind of semiconductor chilling plate according to claim 1, is characterized in that: cored solder employing cored solder HL306 or cored solder HL308 in described step (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104148785A CN103464853A (en) | 2013-09-12 | 2013-09-12 | Method for welding conducting wires of semiconductor refrigerating plates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104148785A CN103464853A (en) | 2013-09-12 | 2013-09-12 | Method for welding conducting wires of semiconductor refrigerating plates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103464853A true CN103464853A (en) | 2013-12-25 |
Family
ID=49790017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013104148785A Pending CN103464853A (en) | 2013-09-12 | 2013-09-12 | Method for welding conducting wires of semiconductor refrigerating plates |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103464853A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102187443A (en) * | 2008-10-27 | 2011-09-14 | 株式会社新川 | Wire-bonding method, and semiconductor device |
| CN102208369A (en) * | 2010-03-31 | 2011-10-05 | 罗姆股份有限公司 | Wire bonding structure of semiconductor device and wire bonding method |
| CN102581424A (en) * | 2012-01-18 | 2012-07-18 | 安徽神虹变压器有限公司 | Welding method for copper wire and aluminum wire |
-
2013
- 2013-09-12 CN CN2013104148785A patent/CN103464853A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102187443A (en) * | 2008-10-27 | 2011-09-14 | 株式会社新川 | Wire-bonding method, and semiconductor device |
| CN102208369A (en) * | 2010-03-31 | 2011-10-05 | 罗姆股份有限公司 | Wire bonding structure of semiconductor device and wire bonding method |
| CN102581424A (en) * | 2012-01-18 | 2012-07-18 | 安徽神虹变压器有限公司 | Welding method for copper wire and aluminum wire |
Non-Patent Citations (3)
| Title |
|---|
| 张永达: "电机定子线圈线棒氧乙炔钎焊", 《现代机械》 * |
| 汪永胜: "多股铝线的气焊", 《焊接》 * |
| 王洪丽: "铜包铝线的钎焊", 《焊接技术》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102254886A (en) | Lead bonding-free IGBT (Insulated Gate Bipolar Translator) module | |
| CN104936320B (en) | Electric auxiliary heating device and air conditioner with same | |
| CN101924176B (en) | A light-emitting diode packaging structure and packaging method thereof | |
| CN204243452U (en) | A conduction-cooled high-power semiconductor laser with heat sink insulation | |
| CN204190160U (en) | A kind of medical high-power semiconductor laser system based on Conduction cooled | |
| CN103464853A (en) | Method for welding conducting wires of semiconductor refrigerating plates | |
| CN104949080B (en) | Honeycomb radiator and its processing technology | |
| CN107511548A (en) | A kind of welding procedure and fixture of vacuum heat conduction pipe and copper base | |
| CN201448619U (en) | Liquid heat radiation LED lamp | |
| CN203774366U (en) | A three-dimensional light-emitting LED chip filament and LED bulb | |
| CN202040663U (en) | High-efficiency LED floodlights | |
| CN205122639U (en) | Integrated packaging structure of perpendicular chip of super large power | |
| CN205542894U (en) | Light -emitting device | |
| CN103928413A (en) | Cooling device | |
| CN103532490B (en) | Photovoltaic power source management module | |
| CN207233722U (en) | A kind of New IGBT module encapsulation construction | |
| CN209325458U (en) | A kind of flip LED light source of convertible power drives | |
| CN105764239B (en) | A kind of great-power electronic component lines plate of high heat dispersion and preparation method thereof | |
| CN205248256U (en) | Power module of two -sided refrigerated power device and wireless encapsulation | |
| CN205122582U (en) | High power density encapsulation module of LED formal dress chip | |
| CN204361129U (en) | A kind of electrothermal module of non-equidistant arrangement | |
| CN205122630U (en) | Full high power density LED chip package structure of establishing ties | |
| CN204614815U (en) | A kind of with heat abstractor high-power LED chip | |
| CN204204848U (en) | Power chip interconnection structure | |
| CN204045584U (en) | A kind of LED COB light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131225 |