CN103451718A - Zone melting furnace device capable of continuous production and process control method thereof - Google Patents
Zone melting furnace device capable of continuous production and process control method thereof Download PDFInfo
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- CN103451718A CN103451718A CN2013103999910A CN201310399991A CN103451718A CN 103451718 A CN103451718 A CN 103451718A CN 2013103999910 A CN2013103999910 A CN 2013103999910A CN 201310399991 A CN201310399991 A CN 201310399991A CN 103451718 A CN103451718 A CN 103451718A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004857 zone melting Methods 0.000 title claims abstract description 31
- 238000004886 process control Methods 0.000 title claims abstract description 11
- 238000010924 continuous production Methods 0.000 title abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 238000005520 cutting process Methods 0.000 claims abstract description 22
- 230000012010 growth Effects 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims 2
- 230000000630 rising effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000007789 gas Substances 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention relates to the field of crystal growth furnaces and aims at providing a zone melting furnace device capable of continuous production and a process control method thereof. The zone melting furnace device capable of continuous production comprises a furnace body, a furnace chamber flange, a linear unit, a connecting block, a rotating unit and a cutting blade; and the process control method of the zone melting furnace device capable of continuous production comprises: welding and drawing silicon single crystals through seed crystal and molten silicon fluid. In the growth process of the silicon single crystals, the zone melting furnace provided by the invention can be used for cutting the silicon single crystals when needing to restart the next growth process of the silicon single crystals so as to quickly restart the next growth process of the silicon single crystals to realize continuous production, thereby saving a large amount of argon gas, electric energy and working hours, lowering the production cost and improving the production efficiency of the silicon single crystals.
Description
Technical field
The invention relates to the crystal growing furnace field, but particularly quantity-produced zone melting furnace device and process control method thereof.
Background technology
Zone melting method (FZ) manufacture order crystal silicon is a kind of novel method for monocrystal growth that is different from vertical pulling stove (CZ), it utilizes the high-frequency induction heating coil by the local thawing of highly purified polycrystal, melting zone relies on the surface tension of molten silicon and magnetic supporting power that heater coil provides and in suspended state, then from the below in melting zone, utilizes seed crystal will melt silicon and is drawn into monocrystalline.Owing to not having crucible to pollute, the silicon single crystal purity of zone melting furnace growth is high, good uniformity, and low microdefect, its good electric property is applicable to making high back-pressure, large electric current, powerful power electronic devices very much.Different from vertical pulling method production silicon single-crystal, in zone melting method manufacture order crystal silicon process, the connection of polycrystalline rod and single crystal rod is the centre hole by high frequency heating coil.Cause 1) disconnected stupefied phenomenon appears after expanding shoulder, zone melting furnace can't be as the vertical pulling stove melt back and continue single crystal growth process; 2) because of welding, thin neck with expand shoulder initial stage power, speed of feed, rotating speed etc. and require to change very fast, operator are had relatively high expectations, occur that the unexpected phenomenon probability such as disconnected stupefied, stream is molten are high.
Normal zone melting furnace production comprises the processes such as preparation work-preheating-welding-thin neck-expansions shoulder-isometrical-finish up-cooling, whole process is according to isometrical asynchronism(-nization) 6-12 hour approximately consuming time, if remove 3 hours approximately consuming time isometrical stage, wherein be about 30-60 minute warm up time.Due to the complicacy of growing zone-melting monocrystal, in the zone melting furnace production process because of disconnected stupefied, stream is molten etc. causes the unexpected situation about stopping of single crystal growing not rarely seen, comprehensive probability of occurrence is not less than 20%, and now in stove polycrystalline rod still remain longer.Traditional processing mode is: slowly reduces and is applied to the power on high frequency heating coil, wait for the polycrystalline rod cooling, and 30 minutes approximately consuming time of this process, as the too fast polycrystalline rod that may cause of lowering the temperature ftractures; Close afterwards high frequency electric source, the off-load shielding gas, open fire door and process accordingly, such as repairing coil, changing seed crystal etc.; Close fire door, be filled with shielding gas, open high frequency electric source, again to the polycrystalline rod preheating, complete a new process of growth.Therefrom can find out; one secondary growth is unexpected stop after to next time new growth, approximately need 2 hours consuming time, during need to expend a large amount of electric energy, shielding gas and manual operation; and because polycrystalline rod fragility is large, cooling after again preheating easily cause polycrystalline rod cracking to cause the waste of raw material.
In sum, but invent a kind of quantity-produced zone melting furnace device for reducing production costs, alleviate operator's work load, the efficiency that improves the production of mass-producing zone melting furnace silicon single-crystal has very important significance.
Summary of the invention
Main purpose of the present invention is to overcome deficiency of the prior art, and a kind of energy quantity-produced zone melting furnace device and process control method thereof are provided.For solving the problems of the technologies described above, solution of the present invention is:
But quantity-produced zone melting furnace device is provided, comprises body of heater, also comprise furnace chamber flange, straight line units, contiguous block, rotary unit and cutting blade; Described straight line units comprises permanent seat and motion bar, permanent seat and furnace chamber flange are fixed, motion bar one end is connected with permanent seat, the other end also can carry out linear telescopic along the straight line units axis direction through the furnace chamber flange and move, be provided with sealing between motion bar and furnace chamber flange, furnace chamber flange and body of heater are fixed; Described rotary unit is connected with motion bar by contiguous block, for the motion of the linear telescopic by motion bar, be rotated, cutting blade connects contiguous block and rotary unit successively, and rotary unit drives cutting blade and is rotated, and cutting blade is for cutting silicon single-crystal.
As further improvement, described straight line unit is any one device in electric cylinder, cylinder or hydro-cylinder.
As further improvement, described rotary unit is any one device in motor or pneumatic motor.
But provide the process control method based on described quantity-produced zone melting furnace device, but seed crystal is fixed on the lower shaft top of quantity-produced zone melting furnace device, utilize seed crystal and the welding of molten silicon liquid to draw out silicon single-crystal, silicon single-crystal comprises weld, venturi portion and expansion shoulder portion successively, and concrete technology control method step comprises:
Steps A: select the cylindrical or square seed crystal formed by dislocation-free silicon single-crystal cutting, and the length of seed crystal is 40～50mm, diameter or the length of side are 5～7mm;
Step B: after preheating completes, (gradually) but increase the high frequency electric source power in quantity-produced zone melting furnace device, until, after polycrystal is fused into molten silicon liquid, the rising seed crystal, to seed crystal and the welding of molten silicon liquid, carries out shaping to the weld drawn out after welding;
Step C: after shaping completes, the Fast Growth venturi portion, keep the speed of growth of venturi portion to be not less than 8mm/min, controls the diameter of venturi portion between 3.2～5.5mm, and length is 45～55mm;
Step D: after venturi portion has been grown, but the speed of feed of the heating power of the high frequency electric source by controlling quantity-produced zone melting furnace device and upper axle, lower shaft increases the diameter of the silicon single-crystal drawn out, and is expanded shoulder portion and draws.
As further improvement, in the pulling process at silicon single-crystal, in the time of need to stopping this drawing and restart silicon single-crystal drawing next time, utilize the junction of cutting blade cutting silicon single-crystal weld and venturi portion, can start silicon single-crystal next time and draw.
As further improvement, linear velocity during described cutting blade work is greater than 10m/s.
Compared with prior art, the invention has the beneficial effects as follows:
In the silicon monocrystal growth process, as occur disconnected stupefied, the silicon single-crystal shape is not good etc. when unforeseen circumstances needs single crystal growing next time again, the present invention can be excised silicon single-crystal, re-start rapidly single crystal growing next time, can realize continuous production, save a large amount of argon gas, electric energy, man-hour, reduce production costs, and improve monocrystalline production efficiency.
The accompanying drawing explanation
But the structural representation that Fig. 1 is quantity-produced zone melting furnace device of the present invention.
Fig. 2 is the silicon single-crystal schematic diagram.
The implementation result figure that Fig. 3 is conventional art.
Fig. 4 is implementation result figure of the present invention.
Reference numeral in figure is: 1 straight line units; 2 furnace chamber flanges; 3 contiguous blocks; 4 rotary units; 5 cutting blades; 6 silicon single-crystal; 7 seed crystals; 8 bodies of heater; 101 permanent seats; 102 motion bars; 601 welds; 602 venturi portions; 603 expand shoulder portion.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail:
But the quantity-produced zone melting furnace device in Fig. 1 comprises furnace chamber flange 2, straight line units 1, contiguous block 3, rotary unit 4 and cutting blade 5.Described straight line units 1 comprises permanent seat 101 and motion bar 102, permanent seat 101 is fixing with furnace chamber flange 2, motion bar 102 1 ends are connected with permanent seat 101, the other end also can carry out linear telescopic along straight line units 1 axis direction through furnace chamber flange 2 and move, be provided with sealing between motion bar 102 and furnace chamber flange 2, furnace chamber flange 2 is fixing with body of heater 8.Straight line unit is any one device in electric cylinder, cylinder or hydro-cylinder.Described rotary unit 4 is connected with motion bar 102 by contiguous block 3, carry out rotatablely moving of self for the motion of the linear telescopic by motion bar 102, cutting blade 5 connects contiguous block 3 and rotary unit 4 successively, rotary unit 4 drives cutting blade 5 and is rotated, and cutting blade 5 is for cutting silicon single-crystal 6.Rotary unit 4 is any one devices in motor or pneumatic motor.
But seed crystal 7 is fixed on the lower shaft top of quantity-produced zone melting furnace device, utilize seed crystal 7 and the welding of molten silicon liquid to draw out silicon single-crystal 6.As described in Figure 2, silicon single-crystal 6 comprises successively weld 601, venturi portion 602 and expands shoulder portion 603.But the process control method based on described quantity-produced zone melting furnace device, concrete steps comprise:
Steps A: select the cylindrical or square seed crystal 7 formed by dislocation-free silicon single-crystal cutting, and the length of seed crystal 7 is 40～50mm, diameter or the length of side are 5～7mm.
Step B: after preheating completes, increase gradually high frequency electric source power, until after polycrystal is fused into molten silicon liquid, rising seed crystal 7 by seed crystal 7 and the welding of molten silicon liquid, carry out shaping to the weld 601 drawn out after welding.
Step C: after shaping completes, Fast Growth venturi portion 602, keep the speed of growth of venturi portion 602 to be not less than 8mm/min, controls the diameter of venturi portion 602 between 3.2～5.5mm, and length is 45～55mm.Control venturi portion 602 in suitable diameter range, in order to avoid the too small weight that can't support silicon single-crystal 6 of diameter, the excessive cutting blade 5 cutting difficulty that cause of diameter are large.
Step D: after venturi portion 602 has been grown, but the speed of feed of the heating power of the high frequency electric source by controlling quantity-produced zone melting furnace device and upper axle, lower shaft slowly increases the diameter of the silicon single-crystal 6 drawn out, and is expanded shoulder portion 603 and draws.
In the pulling process at silicon single-crystal 6, as disconnected stupefied, the unforeseen circumstances such as silicon single-crystal 6 shapes are not good appears, need to stop this drawing, and restart next time silicon single-crystal 6 while drawing, utilize the junction of cutting blade 5 cutting silicon single-crystal 6 welds 601 and venturi portion 602, can start silicon single-crystal 6 next time and draw.In the selection of cutting position, as cutting position is venturi portion 602, because venturi portion 602 is too thin, be not easy melt back, increased the seeding difficulty of single crystal growing next time; As cutting position is weld 601 or seed crystal 7 places, diameter is too large, to cutting, causes difficulty, therefore correct position is the junction of weld 601 and venturi portion 602.Linear velocity during cutting blade 5 work is greater than 10m/s, has higher stock-removing efficiency.
You need to add is that: when the fusion process of single crystal growing or thin neck process occur that accident need to go up once process of growth again, also can adopt the present invention to realize the cutting to silicon single-crystal 6.
As shown in Figure 3, Figure 4; adopt technical scheme of the present invention to compare with conventional solution; in silicon single-crystal 6 process of growth (before the clamping of clamper realization to silicon single-crystal 6); the unforeseen circumstancess such as disconnected stupefied or monocrystalline shape is not good as occurred need to be ended single crystal growth process; adopt the present invention can save slow cooling to polycrystal, emit shielding gas, blow-on door, change seed crystal 7 process such as preheating again; and directly silicon single-crystal 6 is excised, can directly restart welding seeding.Adopt the present invention, occur the unexpected termination situation of monocrystalline one time, can save man-hour more than 1.5 hours, and save a large amount of electric energy and shielding gas, save production cost, enhance productivity.Initial stage at welding, thin neck and expansion shoulder, the processing parameters such as high frequency electric source power, upper lower shaft rotating speed, upper lower shaft speed of feed require to change very fast, higher to crystal pulling personnel operational requirement, careless slightly disconnected stupefied, the unforeseen circumstances such as stream is molten, shape is not good just may appear.According to statistics, the unforeseen circumstances more than 90% all occurs in these stages, so the rate of utilization of the present invention in zone-melted silicon single crystal 6 process of growth is very high.Adopt the technology of the present invention can improve zone-melted silicon single crystal 6 productivity more than 10%, and reduce production costs.
Finally, it should be noted that above what enumerate is only specific embodiments of the invention.Obviously, the invention is not restricted to above embodiment, a lot of distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention, all should think protection scope of the present invention.
Claims (6)
1., but quantity-produced zone melting furnace device, comprise body of heater, it is characterized in that, also comprise furnace chamber flange, straight line units, contiguous block, rotary unit and cutting blade; Described straight line units comprises permanent seat and motion bar, permanent seat and furnace chamber flange are fixed, motion bar one end is connected with permanent seat, the other end also can carry out linear telescopic along the straight line units axis direction through the furnace chamber flange and move, be provided with sealing between motion bar and furnace chamber flange, furnace chamber flange and body of heater are fixed; Described rotary unit is connected with motion bar by contiguous block, for the motion of the linear telescopic by motion bar, be rotated, cutting blade connects contiguous block and rotary unit successively, and rotary unit drives cutting blade and is rotated, and cutting blade is for cutting silicon single-crystal.
2., but quantity-produced zone melting furnace device according to claim 1, is characterized in that, described straight line unit is any one device in electric cylinder, cylinder or hydro-cylinder.
3., but quantity-produced zone melting furnace device according to claim 1, is characterized in that, described rotary unit is any one device in motor or pneumatic motor.
4. but the process control method based on quantity-produced zone melting furnace device claimed in claim 1, but seed crystal is fixed on the lower shaft top of quantity-produced zone melting furnace device, utilize seed crystal and the welding of molten silicon liquid to draw out silicon single-crystal, silicon single-crystal comprises weld, venturi portion and expansion shoulder portion successively, it is characterized in that, concrete technology control method step comprises:
Steps A: select the cylindrical or square seed crystal formed by dislocation-free silicon single-crystal cutting, and the length of seed crystal is 40～50mm, diameter or the length of side are 5～7mm;
Step B: after preheating completes, but increase the high frequency electric source power in quantity-produced zone melting furnace device, until, after polycrystal is fused into molten silicon liquid, the rising seed crystal, to seed crystal and the welding of molten silicon liquid, carries out shaping to the weld drawn out after welding;
Step C: after shaping completes, the Fast Growth venturi portion, keep the speed of growth of venturi portion to be not less than 8mm/min, controls the diameter of venturi portion between 3.2～5.5mm, and length is 45～55mm;
Step D: after venturi portion has been grown, but the speed of feed of the heating power of the high frequency electric source by controlling quantity-produced zone melting furnace device and upper axle, lower shaft increases the diameter of the silicon single-crystal drawn out, and is expanded shoulder portion and draws.
5. process control method according to claim 4, it is characterized in that, in the pulling process at silicon single-crystal, in the time of need to stopping this drawing and restart silicon single-crystal drawing next time, utilize the junction of cutting blade cutting silicon single-crystal weld and venturi portion, can start silicon single-crystal next time and draw.
6. process control method according to claim 5, is characterized in that, linear velocity during described cutting blade work is greater than 10m/s.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178804A (en) * | 2014-08-06 | 2014-12-03 | 天津市环欧半导体材料技术有限公司 | Crystal cutting device for zone melting furnace |
| WO2017070827A1 (en) * | 2015-10-26 | 2017-05-04 | 北京京运通科技股份有限公司 | Automatic zone melting crystal growth method and system |
| CN108486646A (en) * | 2018-05-25 | 2018-09-04 | 天津市环欧半导体材料技术有限公司 | A kind of zone melting single-crystal microcephaly device for excising and the device for improving excision efficiency |
| CN109252209A (en) * | 2018-07-26 | 2019-01-22 | 天津中环领先材料技术有限公司 | A method of improving zone-melted silicon single crystal polycrystalline bar utilization rate |
| CN110195256A (en) * | 2019-06-10 | 2019-09-03 | 苏州亚傲鑫企业管理咨询有限公司 | Monocrystalline silicon repeatedly feeds the device continuously grown and technique |
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| CN108486646B (en) * | 2018-05-25 | 2023-08-04 | 天津中环领先材料技术有限公司 | Zone-melting monocrystal small head cutting device and device for improving cutting efficiency |
| CN109252209A (en) * | 2018-07-26 | 2019-01-22 | 天津中环领先材料技术有限公司 | A method of improving zone-melted silicon single crystal polycrystalline bar utilization rate |
| CN110195256A (en) * | 2019-06-10 | 2019-09-03 | 苏州亚傲鑫企业管理咨询有限公司 | Monocrystalline silicon repeatedly feeds the device continuously grown and technique |
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