CN103415123A - MOS fault protection circuit - Google Patents
MOS fault protection circuit Download PDFInfo
- Publication number
- CN103415123A CN103415123A CN201310379662XA CN201310379662A CN103415123A CN 103415123 A CN103415123 A CN 103415123A CN 201310379662X A CN201310379662X A CN 201310379662XA CN 201310379662 A CN201310379662 A CN 201310379662A CN 103415123 A CN103415123 A CN 103415123A
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- CN
- China
- Prior art keywords
- resistance
- mos
- diode
- protection circuit
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
- H05B45/3725—Switched mode power supply [SMPS]
- H05B45/385—Switched mode power supply [SMPS] using flyback topology
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
- H05B47/20—Responsive to malfunctions or to light source life; for protection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Circuit Arrangement For Electric Light Sources In General (AREA)
Abstract
The invention discloses an MOS fault protection circuit and belongs to the technical field of electronic illumination. The MOS fault protection circuit mainly comprises an alternating current source, bridge rectifiers, a fuse, a transformer, a switch tube, a resistor and a control IC and further comprises a diode, wherein the positive electrode of the diode is connected with one end of the resistor (RS), the negative electrode of the diode is connected with the other end, connected with the ground, of the resistor (RS), and thus a consequent parallel relation between the resistor and the diode is formed. The MOS fault protection circuit is provided with the protection resistor and the control IC, and therefore the MOS fault protection circuit will not be burnt and damaged. Meanwhile, the production technology is simple due to the fact that the circuit is simple, production efficiency is improved, and production cost is lowered.
Description
Technical field
The present invention relates to the electrical lighting technical field, particularly a kind of MOS error protection circuit.
Background technology
Along with the fast development of LED light fixture technology is increasingly mature with application, the LED driving power as the LED light fixture can luminescence display pith, its technical development is swift and violent.But LED driving power technology is compared the traditional switch power supply; want cube little; simple in circuits; thereby cause the route protection deficiency; cause when the practical application of LED light fixture, the switching tube of LED driving power (MOSFET) short circuit of breaking down, now the LED driving power will there will be the naked light of smoldering; cause the LED light fixture to work, can't reach the requirement of Safety Approval simultaneously.
As shown in Figure 1, after switching tube (MOSFET) short trouble, alternating current (AC), through heap (BD1), transformer (TRANSFORMER), the switching tube (MOSFET) of passing a bridge, then directly is added to resistance (RS) upper, last ground connection; The LED driving power is due to the restriction that is subject to volume simultaneously, resistance (RS) adopts several SMD resistance to be formed in parallel usually, cause underpower, short circuit current can combust resistance (RS), when resistance (RS) combust be blown after large electric current can be through controlling IC to ground, to control IC and burn out, the LED driving power is burned, and finally cause the LED light fixture to work; This kind LED driving power needs larger space simultaneously, and therefore causing can't miniaturization in the limited space of LED lamp interior.
Summary of the invention
In order to solve above-mentioned existing technical deficiency and defect, the object of the present invention is to provide a kind of MOS error protection circuit.
The objective of the invention is by realizing by the following technical solutions:
A kind of MOS error protection circuit, mainly comprise alternating current (AC), bridge heap (BD1), fuse (FUSE), transformer (TRANSFORMER), switching tube (MOSFET), resistance (RS) and control IC; Also comprise a diode (D1), the positive pole of described diode (D1) is connected with an end of resistance (RS), and its negative pole is connected with the other end of resistance (RS) ground connection, forms forward relation in parallel of resistance (RS) and diode (D1).
As the optional technical scheme of the present invention, described resistance (RS) can adopt single plug-in unit resistance also can adopt the parallel connection of many SMD resistance.
In sum, MOS error protection circuit provided by the present invention, the beneficial effect had:
1, guarantee resistance (RS) and control IC can not be burned and smolder.
2, thereby the simple formation of circuit production technology is simple, has improved production efficiency, has reduced production cost.
The accompanying drawing explanation
Fig. 1 is the schematic diagram of prior art scheme circuit.
Fig. 2 is the schematic diagram of a kind of embodiment of MOS error protection circuit of the present invention.
Description of reference numerals: AC: alternating current; FUSE: fuse; BD1: bridge heap; TRANSFORMER: transformer; MOSFET: switching tube; RS: resistance; D1: diode.
Embodiment
Below by embodiment also by reference to the accompanying drawings, technical scheme of the present invention is described in further detail.Following explanation to embodiments of the present invention is intended to present general inventive concept of the present invention is made an explanation with reference to accompanying drawing, and not should be understood to a kind of restriction of the present invention.
Shown in accompanying drawing 2, the invention provides a kind of MOS error protection circuit, comprise alternating current (AC), fuse (FUSE), bridge heap (BD1), transformer (TRANSFORMER), switching tube (MOSFET), resistance (RS), diode (D1).
As shown in Fig. 2 embodiment, described bridge heap (BD1) four interfaces, first interface is connected with fuse (FUSE) end, the second interface earth terminal, the 3rd interface is connected with an end of alternating current (AC), and the 4th interface is connected with transformer (TRANSFORMER); The other end of described fuse (FUSE) is connected with the other end of alternating current (AC).Described switching tube (MOSFET) has three contacts, the first contact is connected with a wherein contact of controlling IC, the second contact is connected with described transformer (TRANSFORMER), and the 3rd contact is connected with another contact, an end of described resistance (RS) and the positive pole of described diode of described control IC simultaneously; Earth terminal after the other end of described resistance (RS) is connected with the negative pole of described diode, form forward relation in parallel of described resistance (RS) and described diode (D1).
In the present invention, described resistance (RS) can be plug-in unit resistance or the parallel connection of many SMD resistance; In embodiment as shown in Figure 2, described resistance (RS) adopts plug-in unit resistance.
As shown in Figure 2; after switching tube (MOSFET) breaks down short circuit; electric current is through bridge heap (BD1), transformer (TRANSFORMER), switching tube (MOSFET); then directly be added to resistance (RS) diode (D1) to the ground end; now diode (D1) can be by the unit clamper at resistance (RS) two ends in the 1.1V left and right; thereby the loss power of guaranteeing resistance (RS) is very little; protective resistance (RS) can not be burned; large electric current can directly blow fuse (FUSE), and further protection control IC can be by scaling loss.Therefore, after fuse (FUSE) is blown, can replace easily another intact fuse, thereby reduce the loss of LED driving power, guarantee that the LED light fixture can work in time.
The above embodiment has only expressed the preferred embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention and embodiment.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (2)
1. a MOS error protection circuit, mainly comprise alternating current (AC), bridge heap (BD1), fuse (FUSE), transformer (TRANSFORMER), switching tube (MOSFET), resistance (RS) and control IC; It is characterized in that, also comprise a diode (D1), the positive pole of described diode (D1) is connected with an end of resistance (RS), and its negative pole is connected with the other end of resistance (RS) ground connection, forms forward relation in parallel of resistance (RS) and diode (D1).
2. according to claim 1, described MOS error protection circuit, is characterized in that, described resistance (RS) can adopt single plug-in unit resistance also can adopt the parallel connection of many SMD resistance.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310379662XA CN103415123A (en) | 2013-08-28 | 2013-08-28 | MOS fault protection circuit |
| PCT/CN2013/083420 WO2015027537A1 (en) | 2013-08-28 | 2013-09-12 | Mos fault protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310379662XA CN103415123A (en) | 2013-08-28 | 2013-08-28 | MOS fault protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103415123A true CN103415123A (en) | 2013-11-27 |
Family
ID=49608099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310379662XA Pending CN103415123A (en) | 2013-08-28 | 2013-08-28 | MOS fault protection circuit |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103415123A (en) |
| WO (1) | WO2015027537A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1213236A (en) * | 1997-09-26 | 1999-04-07 | 夏普株式会社 | Light receiving amplifier |
| US20050237007A1 (en) * | 2004-04-22 | 2005-10-27 | Chung-Han Huang | Electronic alternating-current regulator |
| CN102594155A (en) * | 2012-03-30 | 2012-07-18 | 江苏晟芯微电子有限公司 | Primary edge control type switch power supply with high-precision constant-voltage/constant-current output and high-pulse-frequency (PF) value |
| CN102629383A (en) * | 2012-02-28 | 2012-08-08 | 湖南大学 | Motion object detection method based on random strategy |
| CN203387749U (en) * | 2013-08-28 | 2014-01-08 | 深圳市东方之星电源有限公司 | MOS fault protection line |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1123973C (en) * | 1999-12-18 | 2003-10-08 | 艾默生网络能源有限公司 | Low-loss MOS transistor circuit for single-ended reverse exciting switching voltage regulator |
| CN100521515C (en) * | 2007-08-23 | 2009-07-29 | 熊猫电子集团有限公司 | High-power MOSFET tube security protection method and circuit in radio frequency emitting circuit |
| CN102594101A (en) * | 2012-02-16 | 2012-07-18 | 江苏大学 | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit |
| CN102664516A (en) * | 2012-05-22 | 2012-09-12 | 上海新进半导体制造有限公司 | Switching power supply for driving MOS (Metal Oxide Semiconductor) tube |
-
2013
- 2013-08-28 CN CN201310379662XA patent/CN103415123A/en active Pending
- 2013-09-12 WO PCT/CN2013/083420 patent/WO2015027537A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1213236A (en) * | 1997-09-26 | 1999-04-07 | 夏普株式会社 | Light receiving amplifier |
| US20050237007A1 (en) * | 2004-04-22 | 2005-10-27 | Chung-Han Huang | Electronic alternating-current regulator |
| CN102629383A (en) * | 2012-02-28 | 2012-08-08 | 湖南大学 | Motion object detection method based on random strategy |
| CN102594155A (en) * | 2012-03-30 | 2012-07-18 | 江苏晟芯微电子有限公司 | Primary edge control type switch power supply with high-precision constant-voltage/constant-current output and high-pulse-frequency (PF) value |
| CN203387749U (en) * | 2013-08-28 | 2014-01-08 | 深圳市东方之星电源有限公司 | MOS fault protection line |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015027537A1 (en) | 2015-03-05 |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131127 |