CN103400890A - Reworking technology for striping re-plating of crystal silicon solar cell PECVD (plasma enhanced chemical vapor deposition) chromatic aberration slice - Google Patents
Reworking technology for striping re-plating of crystal silicon solar cell PECVD (plasma enhanced chemical vapor deposition) chromatic aberration slice Download PDFInfo
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Abstract
本发明公开了一种晶硅太阳电池PECVD色差片去膜重镀的返工工艺，其包括去膜清洗、管式PECVD镀膜、丝网印刷和烧结步骤；所述去膜清洗的具体分步骤为HF去膜、水洗1、HCl酸洗、水洗2、HF酸洗、水洗3、水洗4、水洗5和干燥；除水洗5分步骤外，其余各酸洗和水洗分步骤均需鼓泡。本发明改进了传统返工方法，减少了制绒、扩散以及刻蚀等步骤，工序少，耗时短，降低了生产成本。返工后的硅片表面干净，电池片的转换效率和合格率接近正常水平，外观正常，未产生花片。
The invention discloses a rework process for film removal and replating of PECVD color difference film for crystalline silicon solar cells, which includes the steps of film removal and cleaning, tubular PECVD coating, screen printing and sintering; the specific sub-steps of film removal and cleaning are HF Film removal, water washing 1, HCl pickling, water washing 2, HF pickling, water washing 3, water washing 4, water washing 5 and drying; except the water washing 5 steps, the other pickling and water washing sub-steps need bubbling. The invention improves the traditional reworking method, reduces the steps of texturing, diffusion and etching, and has fewer procedures, shorter time consumption and lower production cost. The surface of the reworked silicon wafer is clean, the conversion efficiency and pass rate of the cell are close to the normal level, the appearance is normal, and no flower is produced.
Description
Technical field
The invention belongs to crystal silicon solar energy battery and make field, particularly relate to the technique of doing over again that a kind of crystal silicon solar battery PECVD aberration sheet striping heavily plates, refer to that specifically plasma strengthens chemical vapour deposition technique (PECVD) plated film and produces a kind of special treatment method that the abnormal silicon chip of Film color carries out.
Background technology
At present, crystal silicon solar batteries is more and more ripe, and the presentation quality of solar cell is had higher requirement, and rete is inhomogeneous or extremely be regarded as appearance quality.Therefore, before making the finished product cell piece, must be to the processing of doing over again of this type of silicon chip.The aberration sheet mainly comprises the abnormal rainbow plate that produces of discharge, the aberration sheet that between sheet, turn white in color distortion and stuck point place, and double-sided coating sheet and anti-plating sheet, if making the finished product cell piece, these silicon chips will have a strong impact on the qualification rate of cell piece, even cause scrapping of cell piece.
Be mainly the aberration sheet in the sheet of doing over again of PECVD, therefore, solve the bad order problem that in the cell piece production process, PECVD produces, can effectively improve the qualification rate of product, thereby reduce production costs.At present, the existing technical scheme of doing over again is that all kinds of sheets of doing over again that PECVD produces are carried out striping, making herbs into wool, diffusion, etching, PECVD, a plurality of operations such as silk screen printing and sintering, operation is many, length consuming time, and this reworking method can produce a large amount of colored sheets, i.e. paillette, and it has had a strong impact on outward appearance and the efficiency of cell piece.Therefore, certainly will will have a kind of operation few, consuming time short, the reworking method that does not produce colored sheet solves problems.
Summary of the invention
Purpose of the present invention provides a kind of operation few for the deficiency that solves prior art exactly, and is consuming time short, do not produce the reworking method of the crystal silicon solar battery PECVD aberration sheet of colored sheet.
The present invention solves the problems of the technologies described above the technical scheme of taking, the technique of doing over again that a kind of crystal silicon solar battery PECVD aberration sheet striping heavily plates, and it comprises striping cleaning, tubular type PECVD plated film, silk screen printing and sintering step; What described striping cleaned is specifically HF striping, washing 1, HCl pickling, washing 2, HF pickling, washing 3, washing 4, washing 5 and dry step by step; Except washing 5 step by step, all the other each pickling and washing all need bubbling step by step.
As a kind of preferred, it is 15% ~ 40% HF solution that described HF striping adopts mass concentration in step by step, and the reaction time is 10 ~ 30 minutes; In described HCl pickling step by step, the employing mass concentration is 3% ~ 10% HCl solution, and soak time is 60 ~ 200s; In described HF pickling step by step, the employing mass concentration is 3% ~ 10% HF solution, and soak time is 60 ~ 200s.
As a kind of preferred, described washing 1, washing 2, washing 3, washing 4 and washing 5 washing time step by step are all at 60 ~ 500s, and described washing 5 temperature step by step is controlled at more than 60 ℃.
As one various preferred, described drying adopts the method for drying step by step, and the drying time is at 300 ~ 600s.
The present invention for the sheet type of doing over again comprise: the abnormal rainbow plate that produces of discharge, the aberration sheet that between sheet, turn white in color distortion and stuck point place, and double-sided coating sheet and anti-plating sheet.In the striping cleaning step, pickling and washing are carried out in washing trough separately, and except washing 5 grooves without bubbling, all the other each descaling baths and rinsing bowl are all opened the bubbling function.
In the present invention, the effect step by step of HF striping is to remove the silicon nitride film layer of silicon chip surface; HCl pickling effect step by step is to remove the metal ion of silicon chip surface, makes silicon chip surface cleaner; HF pickling effect step by step is to make silicon chip surface to have hydrophobicity, is easy to dehydration; Washing 1, washing 2, washing 3, washing 4 is respectively cleaning silicon chip surface striping reactant with washing 5 effect step by step, the HCl that cleaning silicon chip is residual, the HF that cleaning silicon chip is residual, the further dehydration property of cleaning silicon chip surface and increase silicon chip.
In the present invention, after cleaning, the drying of silicon chip adopts the drying method, and according to the concrete condition of the equipment of drying, the drying time can, at 300 ~ 600s, make the silicon chip surface bone dry.Silicon chip after drying is directly adopted tubular type PECVD plated film, and then the positive counterelectrode of silk screen printing and back surface field, carry out sintering finally, forms the finished product cell piece.
The present invention has improved traditional reworking method, has reduced the steps such as making herbs into wool, diffusion and etching, has reduced production cost.Silicon chip surface after doing over again is clean, and the conversion efficiency of cell piece and qualification rate are near normal level, and outward appearance is normal, does not produce the flower sheet.
Description of drawings
Fig. 1 is process flow diagram of the present invention.
Embodiment
Below by embodiment, technical solution of the present invention is described further, but the present invention is not limited thereto.After the content of having read the present invention's record, those skilled in the art can make various changes or modifications the present invention, but these equivalences change and modification falls into the scope of the claims in the present invention equally.
Embodiment 1:
As shown in Figure 1, the technique of doing over again that a kind of crystal silicon solar battery PECVD aberration sheet striping heavily plates, its step comprises striping cleaning, PECVD, silk screen printing and sintering, wherein striping clean comprise specifically that HF striping, washing 1, HCl pickling, washing 2, HF acid, wash water wash 3, washing 4, washing 5 and drying step by step.Specific implementation process is as follows:
The abnormal rainbow plate that produces of described discharge is placed in HF striping groove, and the concentration of its HF is 40%, and soak time is 30min, after silicon nitride film layer has reacted, puts it in washing 1 groove, and washing time is 300s, removes residual reactant.Then, enter the 5%HCl pickling, soak time is 150s, removes the metal ion of silicon chip surface, then enters washing 2 grooves, and washing time is 200s, the HCl that cleaning silicon chip is residual.Enter the 5%HF descaling bath after washing 2, soak time is 100s, makes silicon chip surface have hydrophobicity.Then enter respectively washing 3 grooves and washing 4 grooves, the HF that cleaning silicon chip is residual and further cleaning silicon chip surface, the time is 100s.And then, enter washing 5 grooves, add heat soaking 60s, increase the dehydration property of silicon chip, dry after washing 5, the drying time is 400s, in whole striping cleaning process, wherein, except washing 5 grooves without bubbling, other all grooves are all opened the bubbling function, and washing 5 grooves must be heated to more than 60 ℃.Finally, the silicon chip that dries is carried out tubular type PECVD plated film, the positive counterelectrode of silk screen printing and back surface field and sinter the finished product cell piece into.
Embodiment 2:
The technique of doing over again that a kind of crystal silicon solar battery PECVD aberration sheet striping heavily plates, its step is with embodiment 1.Specific implementation process is as follows:
The aberration sheet that is turned white in color distortion between described and stuck point place is placed in HF striping groove, and the concentration of its HF is 35%, and soak time is 15min, after silicon nitride film layer has reacted, puts it in washing 1 groove, and washing time is 300s, removes residual reactant.Then, enter the 5%HCl pickling, soak time is 100s, removes the metal ion of silicon chip surface, then enters washing 2 grooves, and washing time is 200s, the HCl that cleaning silicon chip is residual.Enter the 5%HF descaling bath after washing 2, soak time is 100s, makes silicon chip surface have hydrophobicity.Then enter respectively washing 3 grooves and washing 4 grooves, the HF that cleaning silicon chip is residual and further cleaning silicon chip surface, the time is 100s.And then, enter washing 5 grooves, add heat soaking 60s, increase the dehydration property of silicon chip, dry after washing 5, the drying time is 400s, in whole striping cleaning process, wherein, except washing 5 grooves without bubbling, other all grooves are all opened the bubbling function, and washing 5 grooves must be heated to more than 60 ℃.Finally, the silicon chip that dries is carried out tubular type PECVD plated film, the positive counterelectrode of silk screen printing and back surface field and sinter the finished product cell piece into.
Embodiment 3:
The technique of doing over again that a kind of crystal silicon solar battery PECVD aberration sheet striping heavily plates, its step is with embodiment 1.Specific implementation process is as follows:
Described double-sided coating sheet and anti-plating sheet are placed in HF striping groove, and the concentration of its HF is 20%, and soak time is 10min, after silicon nitride film layer has reacted, puts it in washing 1 groove, and washing time is 300s, removes residual reactant.Then, enter the 5%HCl pickling, soak time is 100s, removes the metal ion of silicon chip surface, then enters washing 2 grooves, and washing time is 200s, the HCl that cleaning silicon chip is residual.Enter the 5%HF descaling bath after washing 2, soak time is 100s, makes silicon chip surface have hydrophobicity.Then enter respectively washing 3 grooves and washing 4 grooves, the HF that cleaning silicon chip is residual and further cleaning silicon chip surface, the time is 100s.And then, enter washing 5 grooves, add heat soaking 60s, increase the dehydration property of silicon chip, dry after washing 5, the drying time is 400s, in whole striping cleaning process, wherein, except washing 5 grooves without bubbling, other all grooves are all opened the bubbling function, and washing 5 grooves must be heated to more than 60 ℃.Finally, the silicon chip that dries is carried out tubular type PECVD plated film, the positive counterelectrode of silk screen printing and back surface field and sinter the finished product cell piece into.
Claims (4)
1. the technique of doing over again that crystal silicon solar battery PECVD aberration sheet striping heavily plates, is characterized in that, comprises striping cleaning, tubular type PECVD plated film, silk screen printing and sintering step; What described striping cleaned is specifically HF striping, washing 1, HCl pickling, washing 2, HF pickling, washing 3, washing 4, washing 5 and dry step by step; Except washing 5 step by step, all the other each pickling and washing all need bubbling step by step.
2. the technique of doing over again of heavily plating by crystal silicon solar battery PECVD aberration sheet striping claimed in claim 1, is characterized in that, it is 15% ~ 40% HF solution that described HF striping adopts mass concentration in step by step, and the reaction time is 10 ~ 30 minutes; In described HCl pickling step by step, the employing mass concentration is 3% ~ 10% HCl solution, and soak time is 60 ~ 200s; In described HF pickling step by step, the employing mass concentration is 3% ~ 10% HF solution, and soak time is 60-200s.
3. the technique of doing over again of heavily plating by crystal silicon solar battery PECVD aberration sheet striping claimed in claim 1, is characterized in that described washing 1, washing 2, washing 3, washing 4 and washing 5 washing time step by step are all at 60 ~ 500s, and described washing 5 temperature step by step is controlled at more than 60 ℃.
4. the technique of doing over again of heavily plating by crystal silicon solar battery PECVD aberration sheet striping claimed in claim 1 is characterized in that described drying adopts the method for drying step by step, and the drying time is at 300 ~ 600s.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715304A (en) * | 2013-12-24 | 2014-04-09 | 天津英利新能源有限公司 | Method for treating chromatic aberration piece through wet etching machine |
| CN103887369A (en) * | 2014-03-11 | 2014-06-25 | 衡水英利新能源有限公司 | Reworking method of silicon wafer coating film color shading slices |
| CN103894362A (en) * | 2014-01-10 | 2014-07-02 | 浙江晶科能源有限公司 | Method for cleaning coating film reworked sheet |
| CN103915329A (en) * | 2014-03-07 | 2014-07-09 | 晶澳太阳能有限公司 | Method for processing abnormal wafers before printing of monocrystalline silicon battery wire mesh |
| CN104485388A (en) * | 2014-12-11 | 2015-04-01 | 东方日升新能源股份有限公司 | Reworking method for defective silicon wafers after PECVD (plasma enhanced chemical vapor deposition) coating of crystal silicon solar cells |
| CN104993014A (en) * | 2015-05-27 | 2015-10-21 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN105449036A (en) * | 2015-12-03 | 2016-03-30 | 通威太阳能（合肥）有限公司 | Reworking treatment method for poor screen printing sheet |
| CN106057967A (en) * | 2016-06-01 | 2016-10-26 | 浙江晶科能源有限公司 | Reworking method for RIE (Reactive Ion Etching) black silicon cell |
| CN106299023A (en) * | 2016-08-26 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of anti-PID solaode is done over again the processing method of sheet |
| CN109612758A (en) * | 2018-12-17 | 2019-04-12 | 惠科股份有限公司 | Debugging method and debugging machine platform of coating equipment |
| CN110165015A (en) * | 2019-04-12 | 2019-08-23 | 横店集团东磁股份有限公司 | A kind of solar energy single crystal battery slice etching technique |
| CN114639755A (en) * | 2020-12-16 | 2022-06-17 | 福建钜能电力有限公司 | A kind of manufacturing method of heterojunction solar cell recycling silicon wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103715304B (en) * | 2013-12-24 | 2016-09-07 | 天津英利新能源有限公司 | A kind of method realizing the process of aberration sheet based on wet etching machine |
| CN103715304A (en) * | 2013-12-24 | 2014-04-09 | 天津英利新能源有限公司 | Method for treating chromatic aberration piece through wet etching machine |
| CN103894362A (en) * | 2014-01-10 | 2014-07-02 | 浙江晶科能源有限公司 | Method for cleaning coating film reworked sheet |
| CN103915329A (en) * | 2014-03-07 | 2014-07-09 | 晶澳太阳能有限公司 | Method for processing abnormal wafers before printing of monocrystalline silicon battery wire mesh |
| CN103887369A (en) * | 2014-03-11 | 2014-06-25 | 衡水英利新能源有限公司 | Reworking method of silicon wafer coating film color shading slices |
| CN103887369B (en) * | 2014-03-11 | 2016-10-26 | 衡水英利新能源有限公司 | A kind of reworking method of silicon chip film-coated aberration sheet |
| CN104485388A (en) * | 2014-12-11 | 2015-04-01 | 东方日升新能源股份有限公司 | Reworking method for defective silicon wafers after PECVD (plasma enhanced chemical vapor deposition) coating of crystal silicon solar cells |
| CN104993014A (en) * | 2015-05-27 | 2015-10-21 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN104993014B (en) * | 2015-05-27 | 2017-02-01 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN105449036A (en) * | 2015-12-03 | 2016-03-30 | 通威太阳能（合肥）有限公司 | Reworking treatment method for poor screen printing sheet |
| CN105449036B (en) * | 2015-12-03 | 2017-10-03 | 通威太阳能（合肥）有限公司 | Reworking treatment method for poor screen printing sheet |
| CN106057967A (en) * | 2016-06-01 | 2016-10-26 | 浙江晶科能源有限公司 | Reworking method for RIE (Reactive Ion Etching) black silicon cell |
| CN106299023A (en) * | 2016-08-26 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of anti-PID solaode is done over again the processing method of sheet |
| CN106299023B (en) * | 2016-08-26 | 2017-12-22 | 奥特斯维能源（太仓）有限公司 | A kind of anti-PID solar cells are done over again the processing method of piece |
| CN109612758A (en) * | 2018-12-17 | 2019-04-12 | 惠科股份有限公司 | Debugging method and debugging machine platform of coating equipment |
| CN109612758B (en) * | 2018-12-17 | 2021-04-02 | 惠科股份有限公司 | Debugging method and debugging machine platform of coating equipment |
| CN110165015A (en) * | 2019-04-12 | 2019-08-23 | 横店集团东磁股份有限公司 | A kind of solar energy single crystal battery slice etching technique |
| CN114639755A (en) * | 2020-12-16 | 2022-06-17 | 福建钜能电力有限公司 | A kind of manufacturing method of heterojunction solar cell recycling silicon wafer |
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