CN103400014A - Method for improving filling rate of redundant figures in long and narrow zone - Google Patents
Method for improving filling rate of redundant figures in long and narrow zone Download PDFInfo
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- CN103400014A CN103400014A CN2013103547167A CN201310354716A CN103400014A CN 103400014 A CN103400014 A CN 103400014A CN 2013103547167 A CN2013103547167 A CN 2013103547167A CN 201310354716 A CN201310354716 A CN 201310354716A CN 103400014 A CN103400014 A CN 103400014A
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Abstract
A method for improving the filling rate of redundant figures in a long and narrow zone comprises the steps as follows: step 1, performing disposable traditional redundant figure off-set staggered filling of a layout; step 2, selecting zones not being fully filled of the redundant figures; step 3, performing redundant figure non-off set staggered filling of the regions not being fully filled of the redundant figures once again. By adopting the method for improving the filling rate of the redundant figures in the long and narrow zone, redundant figures of the obtained layout can be fully filled and are uniform in figure density distribution, the uniformity of following chemical and mechanical grinding and etching can be further improved, and the reliability of semiconductor components is enhanced.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of method that improves long and narrow regional redundant pattern filling rate.
Background technology
At present, in integrated circuit fabrication process, in order to improve the homogeneity of cmp and etching, usually understand in the following technique of 0.25 μ m, and need, in the functional layer of cmp or etching, to add redundant pattern.In order to strengthen the technique performance of described redundant pattern, common redundant pattern filling mode is by described redundant pattern one of them direction along X or Y, or the both direction offset staggered is filled.
But traditional redundant pattern filling mode is to carry out disposable filling for the redundant pattern of same type.Significantly, for long and narrow fill area, owing to after the partial redundance map migration, having exceeded the filling scope that redundant pattern allows, and can't fill, and then cause the redundant pattern of described redundant pattern fill area to fill insufficient, make described cmp or etching technics homogeneity poor, reduce the reliability of semiconductor devices.
Therefore for the problem that prior art exists, this case designer relies on the industry experience for many years of being engaged in, the active research improvement, so there has been a kind of method that improves long and narrow regional redundant pattern filling rate of the present invention.
Summary of the invention
The present invention be directed in prior art, described traditional redundant pattern fill method be easy to cause cmp or the etching technics homogeneity poor, and the defects such as reliability that reduce semiconductor devices provide a kind of method that improves long and narrow regional redundant pattern filling rate.
For realizing the present invention's purpose, the invention provides a kind of method that improves long and narrow regional redundant pattern filling rate, described method comprises:
Execution step S1: described domain with redundant pattern is carried out to disposable traditional redundant pattern offset staggered and fill;
Execution step S2: the inabundant fill area of screening described redundant pattern;
Execution step S3: the inabundant fill area to described redundant pattern is carried out the un-offset staggered filling of redundant pattern again.
Alternatively, described domain defines in design rule minimum spacing is d, and the functional layer pattern that described domain formed is for chemical mechanical milling tech or etching technics.
Alternatively, between described functional layer pattern, form described redundant pattern fill area, the spacing between described redundant pattern fill area and described functional layer pattern is a, and a >=d.
Alternatively, the spacing between described redundant pattern fill area and described functional layer pattern is a, and 5nm≤a≤10 μ m.
Alternatively, the zone of the described not redundant pattern of abundant filling is abundant fill area.
Alternatively, described inabundant fill area comprises redundant pattern that at least one is fully filled.
Alternatively, described fully the spacing of fill area and described adjacent redundant pattern be b, and b >=d.
Alternatively, described fully the spacing of fill area and described adjacent redundant pattern be b, and 5nm≤b≤10 μ m.
The offset staggered of alternatively, described redundant pattern being carried out is filled to the filling mode that described redundant pattern is all alignd and filled along X and Y both direction.
Alternatively, the offset staggered that described redundant pattern is carried out is filled to described redundant pattern one of them direction along X or Y, or carries out simultaneously the offset staggered filling along X, Y both direction.
In sum, the redundant pattern of the domain that the method by the long and narrow regional redundant pattern filling rate of raising of the present invention obtains is not only filled fully, pattern density is evenly distributed, and further improve the homogeneity of subsequent chemistry mechanical lapping or etching, strengthen the reliability of semiconductor devices.
The accompanying drawing explanation
Figure 1 shows that the present invention improves the process flow diagram of the method for long and narrow regional redundant pattern filling rate;
The concrete interim structural representation of implementing of the method for Fig. 2 (a)～Fig. 2 (c) long and narrow regional redundant pattern filling rate for the present invention improves.
Embodiment
By the technology contents, the structural attitude that describe the invention in detail, reached purpose and effect, below in conjunction with embodiment and coordinate accompanying drawing to be described in detail.
Refer to Fig. 1, Figure 1 shows that the present invention improves the process flow diagram of the method for long and narrow regional redundant pattern filling rate.The method of the long and narrow regional redundant pattern filling rate of described raising comprises:
Execution step S1: described domain with redundant pattern is carried out to disposable traditional redundant pattern offset staggered and fill;
Execution step S2: the inabundant fill area of screening described redundant pattern;
Execution step S3: the inabundant fill area to described redundant pattern is carried out the un-offset staggered filling of redundant pattern again.
In order to set forth more intuitively the present invention's technical scheme, highlight the present invention's technique effect, be not tired of and set forth as an example of embodiment example, but should not be considered as the restriction to the technical scheme of the invention.
Refer to Fig. 2 (a)～Fig. 2 (c), and in conjunction with consulting Fig. 1, the concrete interim structural representation of implementing of the method for Fig. 2 (a)～Fig. 2 (c) long and narrow regional redundant pattern filling rate for the present invention improves.The method of the long and narrow regional redundant pattern filling rate of described raising comprises:
Execution step S1: described domain 1 with redundant pattern 11 is carried out to disposable traditional redundant pattern offset staggered and fill;
Nonrestrictive enumerating, described domain 1 defines in design rule minimum spacing is d, the functional layer pattern 12 that described domain 1 is formed is for chemical mechanical milling tech or etching technics.Between described functional layer pattern 12, just form described redundant pattern fill area 13, the spacing between described redundant pattern fill area 13 and described functional layer pattern 12 is a, and a >=d.Preferably, 5nm≤a≤10 μ m.In the present embodiment, described domain 1 with redundant pattern 11 is carried out to the conventional filling mode that process that disposable traditional redundant pattern offset staggered fills can be grasped for those skilled in the art.
Execution step S2: the inabundant fill area 14 of screening described redundant pattern 11;
Particularly, in described domain 1 with redundant pattern 11 being carried out to the process that disposable traditional redundant pattern offset staggered fills, the redundant pattern 11 that is positioned at described redundant pattern fill area 13 is fully filled; Redundant pattern 11 in non-described redundant pattern fill area 13 is fully filled, and define described not fully the zone of the redundant pattern 11 of fillings be abundant fill area 14.Described fully fill area 14 with the spacing of described adjacent redundant pattern 11, be b, and b >=d.Preferably, 5nm≤b≤10 μ m.As those skilled in the art, to hold intelligibly, described redundant pattern 11 can not be positioned at described redundant pattern fill area 13 because of technologic skew.Described inabundant fill area 14 comprises redundant pattern 11 that at least one is fully filled.
Execution step S3: the inabundant fill area 14 to described redundant pattern 11 is carried out the un-offset staggered filling of redundant pattern again;
As concrete embodiment, preferably, the un-offset staggered filling that described redundant pattern 11 is carried out can be the filling mode that described redundant pattern 11 is all alignd and filled along X and Y both direction.
Significantly, the redundant pattern 11 of the domain 1 that the method by the long and narrow regional redundant pattern filling rate of raising of the present invention obtains is not only filled fully, pattern density is evenly distributed, and further improve the homogeneity of subsequent chemistry mechanical lapping or etching, strengthen the reliability of semiconductor devices.
In sum, the redundant pattern of the domain that the method by the long and narrow regional redundant pattern filling rate of raising of the present invention obtains is not only filled fully, pattern density is evenly distributed, and further improve the homogeneity of subsequent chemistry mechanical lapping or etching, strengthen the reliability of semiconductor devices.
Those skilled in the art all should be appreciated that, in the situation that do not break away from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby, if when any modification or modification fall in the protection domain of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (10)
1. a method that improves long and narrow regional redundant pattern filling rate, is characterized in that, described method comprises:
Execution step S1: described domain is carried out to disposable traditional redundant pattern offset staggered and fill;
Execution step S2: the inabundant fill area of screening described redundant pattern;
Execution step S3: the un-offset staggered filling of redundant pattern is carried out in the inabundant fill area to described redundant pattern.
2. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 1, is characterized in that, described domain defines in design rule minimum spacing is d, and the functional layer pattern that described domain formed is for chemical mechanical milling tech or etching technics.
3. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 2, it is characterized in that, between described functional layer pattern, form described redundant pattern fill area, the spacing between described redundant pattern fill area and described functional layer pattern is a, and a >=d.
4. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 3, is characterized in that, the spacing between described redundant pattern fill area and described functional layer pattern is a, and 5nm≤a≤10 μ m.
5. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 2, described not fully the zone of the redundant pattern of fillings be abundant fill area.
6. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 5, is characterized in that, described inabundant fill area comprises redundant pattern that at least one is fully filled.
7. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 6, is characterized in that, described fully the spacing of fill area and described adjacent redundant pattern be b, and b >=d.
8. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 7, is characterized in that, described fully the spacing of fill area and described adjacent redundant pattern be b, and 5nm≤b≤10 μ m.
9. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 2, is characterized in that, the un-offset staggered filling mode that described redundant pattern is all alignd and filled along X and Y both direction that is filled to that described redundant pattern is carried out.
10. the method for the long and narrow regional redundant pattern filling rate of raising as claimed in claim 2, it is characterized in that, the offset staggered that described redundant pattern is carried out is filled to described redundant pattern one of them direction along X or Y, or carries out simultaneously the offset staggered filling along X, Y both direction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013103547167A CN103400014A (en) | 2013-08-14 | 2013-08-14 | Method for improving filling rate of redundant figures in long and narrow zone |
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| CN2013103547167A CN103400014A (en) | 2013-08-14 | 2013-08-14 | Method for improving filling rate of redundant figures in long and narrow zone |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108305833A (en) * | 2017-12-27 | 2018-07-20 | 厦门市三安集成电路有限公司 | A kind of compensation production method of compound semiconductor HBT devices |
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|---|---|---|---|---|
| US6214745B1 (en) * | 1998-11-19 | 2001-04-10 | United Microelectronics Corp. | Method of improving surface planarity of chemical-mechanical polishing operation by forming shallow dummy pattern |
| CN102468134A (en) * | 2010-11-16 | 2012-05-23 | 上海华虹Nec电子有限公司 | Method for adjusting chip graph density using redundancy graph insertion, |
| CN102945302A (en) * | 2012-11-02 | 2013-02-27 | 上海华力微电子有限公司 | Method for dividing high-filling-rate redundant graph |
| CN103116663A (en) * | 2011-11-17 | 2013-05-22 | 中国科学院微电子研究所 | Method for filling redundant metal and method for establishing redundant metal filling mode lookup table |
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2013
- 2013-08-14 CN CN2013103547167A patent/CN103400014A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214745B1 (en) * | 1998-11-19 | 2001-04-10 | United Microelectronics Corp. | Method of improving surface planarity of chemical-mechanical polishing operation by forming shallow dummy pattern |
| CN102468134A (en) * | 2010-11-16 | 2012-05-23 | 上海华虹Nec电子有限公司 | Method for adjusting chip graph density using redundancy graph insertion, |
| CN103116663A (en) * | 2011-11-17 | 2013-05-22 | 中国科学院微电子研究所 | Method for filling redundant metal and method for establishing redundant metal filling mode lookup table |
| CN102945302A (en) * | 2012-11-02 | 2013-02-27 | 上海华力微电子有限公司 | Method for dividing high-filling-rate redundant graph |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108305833A (en) * | 2017-12-27 | 2018-07-20 | 厦门市三安集成电路有限公司 | A kind of compensation production method of compound semiconductor HBT devices |
| CN108305833B (en) * | 2017-12-27 | 2021-03-16 | 厦门市三安集成电路有限公司 | A kind of compensation type fabrication method of compound semiconductor HBT device |
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Application publication date: 20131120 |