CN103399406B - Be diffraction optical element and the preparation method of flat top beam by Gauss beam reshaping - Google Patents
Be diffraction optical element and the preparation method of flat top beam by Gauss beam reshaping Download PDFInfo
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Abstract
The present invention propose a kind of newly realize the diffraction optical element that Gauss turns flat-top, be called for short DOE, and provide the preparation method of described DOE.Prepare difformity, the groove of different size or step in quartz substrate center, then DOE is placed in the diverse location of light path, coordinates with beam-expanding collimation mirror and condenser lens, realize flat top beam.DOE involved in the present invention has following outstanding advantages: energetic transmittance is high, more insensitive to incident laser patterns of change, installs and uses simple, flexible.
Description
Technical field
The present invention relates to laser beam shaping technical field, refering in particular to a kind of is diffraction optical element of flat top beam and preparation method thereof by Gauss beam reshaping.
Background technology
At present, the development of Laser Processing industry especially laser drilling device, laser welding apparatus and laser display apparatus proposes more and more higher requirement to beam quality, on the one hand, retrofit requires that the hot spot of laser is more and more less, and current laser drilling device can realize the punching of diameter some tens of pm.On the other hand, retrofit requires that the hot spot of laser is flat-top distribution, instead of Gaussian distribution.So-called flat-top distribution refers in hot spot inner laser energy even.The feature of Gaussian distribution is then that central energy is high, and edge energy is little.Gaussian beam is used for punching and there will be the problems such as central punch speed is fast, edge trepanning velocity is slow; The center weld fully problem such as edge welding is insufficient is then there will be for laser bonding.Laser display industry also requires that hot spot is flat-head type hot spot.
Realizing the method that Gauss turns flat-top at present mainly contains following several.
The first, non-curved lens.Non-curved lens are different from traditional concave-convex lens, and its curved surface has special pattern requirement.Its advantage to realize close absolutely diffraction efficiency.But difficulty of processing is very big, not easily produces in batches.In addition, non-curved lens can only obtain circular flat-top hot spot, and therefore its range of application is restricted greatly.
The second, microlens array.The principle of microlens array is fairly simple.First use the lenticule of compound eye structural that incident light is divided into several divided beams, then use another lenticule converged by divided beams thus produce flat top beam.Lenticular advantage is to produce in batches, but high to technological requirement, and need accurately and the parameters such as equal control each lenticular curvature, diameter, in addition, single lenticule can not realize flat-top light, must use by two basic change.This proposes high requirement to two lenticular alignings.
The third, diaphragm method.Diaphragm ratio juris uses aperture diaphragm " cut out " thus obtain flat top beam in the marginal portion of Gaussian beam.Its advantage is simple, and shortcoming is to lose comparatively multi-energy.
4th kind, diffraction optical element (
diffractive
optical
element, DOE) shaping methods.Diffraction optical element utilize be diffraction principle, prepare the step of certain depth at element surface, light beam by time produce different optical path differences, then interfere thus produce flat-top hot spot.Diffraction element realizes the advantage that Gauss turns flat-top and is that the angle of divergence, hot spot pattern etc. of high-final light beam of flexibility ratio can control flexibly, and difficult point is complicated process of preparation.
Summary of the invention
The present invention propose a kind of newly realize the diffraction optical element that Gauss turns flat-top, be called for short DOE.Prepare difformity, the groove of different size or step in quartz substrate center, then DOE is placed in the diverse location of light path, coordinates with beam-expanding collimation mirror and condenser lens, realize flat top beam.
Technical scheme provided by the invention is as follows:
Be a diffraction optical element for flat top beam by Gauss beam reshaping, described diffraction optical element is called for short DOE(structure as shown in Figure 1), circular Gaussian beam can be shaped as square or circular flat light beam by described DOE, it is characterized in that,
The DOE structure realizing square flat top beam is that the central area of quartz substrate has square indentations or step; The length of side of groove or step is determined according to application requirement; Height or the degree of depth of step or groove are determined by formula: h=λ/2* (n-1), and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is substrate refractive index;
The DOE structure realizing circular flat light beam is that the central area of quartz substrate has cylinder shape groove or step; The diameter of groove or step is determined according to application requirement; The height of step or groove or the degree of depth determine h=λ/2* (n-1) by formula, and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is substrate refractive index.
The material category of described DOE is quartz glass, simple glass, ZnSe etc.
Be a method for flat top beam by Gauss beam reshaping, Gauss beam reshaping is flat top beam by the DOE described in utilization, comprises following several mode:
The first, first use beam-expanding collimation lens by laser bundle-enlarging collimation, then through DOE, place condenser lens and obtain flat-top hot spot at shaping device rear;
The second, before DOE is placed on parallel beam expand device, places condenser lens and obtains flat-top hot spot after parallel beam expand device;
The third, obtain flat-top hot spot before DOE is put into condenser lens;
4th kind, DOE is put into beam-expanding collimation system inside, before being then put into condenser lens, obtains flat-top hot spot.
The preparation method of described diffraction optical element, comprising:
1) carry out the design of DOE according to final outgoing beam parameter and input beam parameters, generate layout file and lithography mask version;
2) at quartz substrate surface spin coating photoresist, then utilize lithography mask version to carry out photoetching, generate photoetching offset plate figure; For fluted body DOE, after photoetching offset plate figure, graphical distribution is: without photoresist, there is photoresist in other region in quartz substrate center; For the capable DOE of step, carving graphical distribution after glue pattern is: there are photoresist and other region in quartz substrate center without photoresist;
3) utilize photoetching offset plate figure for etch mask, use dry etching method to transfer on quartz substrate by photoetching offset plate figure;
4) photoresist of remnants is removed.
The preparation method of described diffraction optical element, comprising:
1) according to the parameter of incident light and finally need the parameter request of the flat-top hot spot obtained to carry out the design of diffraction shaping element, after design, design document is exported; Design document is converted to GDS file, generates lithography mask version file by GDS file;
2) spin coating photoresist on quartz substrate;
3) utilize lithography mask version file to prepare lithography mask version, use that lithography mask version exposes the photoresist on quartz substrate, develops, fixing operation, thus on quartz substrate, leave the photoresist consistent with design configuration; This photoresist is using the mask as subsequent technique; For fluted body DOE, after photoetching offset plate figure, graphical distribution is: without photoresist, there is photoresist in other region in quartz substrate center; For the capable DOE of step, carving graphical distribution after glue pattern is: there are photoresist and other region in quartz substrate center without photoresist; Also crome metal, nickel, aluminium can be used as the mask of subsequent etching processes;
4) use etching technics to transfer on quartz substrate by photoetching offset plate figure, quartz substrate forms the pattern consistent with design configuration; Described etching technics is dry etch process or wet-etching technology; Wherein dry etch process comprises reactive ion beam etching (RIBE), ion beam etching, inductively coupled plasma reactive ion beam etching (RIBE); Wet-etching technology comprises hf etching, buffered hydrofluoric acid etching;
5) etch mask is removed.The removal of photoresist mask uses acetone; The removal of metal mask uses mineral acid or dioxysulfate aqueous solution.
DOE involved in the present invention has following outstanding advantages:
1. energetic transmittance is high.When non-evaporation anti-reflection film, energetic transmittance can arrive 92-93%.Nearly 100% can be reached when two-sided evaporation anti-reflection film.
2. pair incident laser patterns of change is more insensitive.Actual test experiments shows that the patterns of change of incident laser is less on final flat-top optical quality impact.
3. install and use simple.Traditional multistage DOE is high to the requirement of installing and use, and in light path, the position of each optical element, size, relative position all will accurately control.DOE of the present invention then relative loose.
4. use flexible aspect.DOE of the present invention can use positions different in the optical path.Tradition DOE generally can only be placed on beam-expanding collimation mirror after before condenser lens.
Accompanying drawing explanation
The basic structure of Fig. 1 element of the present invention.Wherein, 101-step; 102-substrate; 103-groove.
Fig. 2 actual shaping effect schematic diagram of the present invention.
Four kinds of use-patterns of Fig. 3 invention:
The first use-pattern of Fig. 3 a: before DOE is positioned at condenser lens, obtains flat-top hot spot after line focus.
Fig. 3 b the second use-pattern: DOE to be positioned at after beam-expanding collimation mirror before condenser lens, obtains flat-top hot spot after line focus.
The third use-pattern of Fig. 3 c: before DOE is positioned at beam-expanding collimation mirror and condenser lens, obtains flat-top hot spot after line focus.
Fig. 3 d the 4th kind of use-pattern: DOE is positioned in the middle of beam-expanding collimation mirror and before condenser lens, obtains flat-top hot spot after line focus.
Embodiment
DOE of the present invention should coordinate with other optical elements can obtain final required flat-top hot spot.Other optical element refers to: beam-expanding collimation mirror, and for being collimated by original incident beam expander, the beam waist radius after collimation should be greater than the active area dimensions of DOE.Such as, for square step or groove sample, the beam waist radius after collimation should cover square step or groove Zone Full completely.For step cutting pattern or groove sample, the beam waist radius after collimation should be greater than diameter at least more than the 2mm of step cutting pattern or groove.Condenser lens, for coalescence producing final flat top beam by the hot spot after DOE shaping.
Concrete embodiment comprises:
The design of diffraction shaping element is carried out in parameter (comprising spot size, the operating distance etc.) requirement of the flat-top hot spot 1, obtained according to the parameter (comprising wavelength, beam waist diameter, the angle of divergence) of incident light and final needs.Design document is exported after design.Design document can be converted to GDS file, and GDS file can generate lithography mask version file;
2, spin coating photoresist on quartz substrate, the kind of photoresist can be 4620,9912,6130 and other photoresist;
3, utilize lithography mask version file to prepare lithography mask version, use that lithography mask version exposes the photoresist on quartz substrate, develops, fixing operation, thus on quartz substrate, leave the photoresist consistent with design configuration; This photoresist is using the mask as subsequent technique; Meanwhile, other materials also can be used as the mask of subsequent etching processes, such as crome metal, nickel, aluminium and other metal;
4, use the etching technics in semiconducter process to transfer on quartz substrate by photoetching offset plate figure, quartz substrate forms the pattern consistent with design configuration.Wherein dry etch process includes but not limited to the methods such as reactive ion beam etching (RIBE), ion beam etching, inductively coupled plasma reactive ion beam etching (RIBE), and wet-etching technology includes but not limited to the wet-etching technology such as hydrofluorite, buffered hydrofluoric acid.
5, etch mask is removed.The removal of photoresist mask uses acetone, and the removal of metal mask uses mineral acid or dioxysulfate aqueous solution.
By embodiment, the present invention is further detailed below:
Embodiment 1: the DOE(fluted body realizing square flat-top hot spot)
Have a laser beam incident light source, its wavelength is 532nm, and spot diameter is 2mm.Require to obtain the square flat-top hot spot that the length of side is 200um under applying focal length is the focus lamp of 200mm through DOE.In order to obtain best shaping effect, need by incident light source first beam-expanding collimation be about 6mm to diameter.
Performing step is as follows:
The first step, carries out theoretical modeling design according to above-mentioned requirements, and generates GDS file, and in GDS file, the length of side of square indentations is 4mm;
Second step, spin coating photoresist on the lithography mask version having crome metal at evaporation, then uses mask plate Preparation equipment to expose photoresist according to GDS file;
3rd step, carries out developing fixing technique to the lithography mask version after exposure, finally on lithography mask version, generates the figure consistent with GDS file;
4th step, uses the corrosive liquid of chromium or dry etch process to remove not having the chromium of photoresist masking;
5th step, uses acetone or equipment for burning-off photoresist by plasma to remove by photoresist;
6th step, spin coating photoresist on quartz substrate, quartz substrate can be the disk of diameter 25mm or the substrate of other size;
7th step, uses the lithography mask version prepared to expose the photoresist on quartz substrate, develop and fixing operation, thus on quartz substrate, obtains the photoetching offset plate figure consistent with the GDS file designed;
8th step, the etching technics in semiconducter process is used to transfer on quartz substrate by photoetching offset plate figure, quartz substrate forms the square indentations consistent with design configuration, the length of side of square indentations is 4mm, wherein dry etch process includes but not limited to the methods such as reactive ion beam etching (RIBE), ion beam etching, inductively coupled plasma reactive ion beam etching (RIBE), and wet-etching technology includes but not limited to the wet-etching technology such as hydrofluorite, buffered hydrofluoric acid; The etching depth of quartz is determined by formula h=λ/2* (n-1), and in this example, wavelength is 532nm, and the refractive index of quartz substrate under 532nm is about 1.45, and therefore etching depth is 532/2* (1.45-1)=591nm;
9th step, uses acetone or equipment for burning-off photoresist by plasma to remove the photoresist that quartz substrate participates in;
Tenth step, so far, DOE element is prepared complete;
11 step, after prepared by DOE, carries out building of actual light path, completes the acquisition of final flat-top hot spot.First expanded diameter 6mm through beam-expanding collimation mirror after laser instrument bright dipping, the light beam after beam-expanding collimation incides DOE surface.It should be noted that the beam center after beam-expanding collimation will overlap completely with the center of square indentations.Light beam through DOE reenters the focus lamp surface being mapped to focal length 200mm, then will obtain the square flat-top hot spot that diameter is 200um at focus lamp near focal point.
Embodiment 2: the DOE(stepped ramp type realizing square flat-top hot spot)
Have a laser beam incident light source, its wavelength is 532nm, and spot diameter is 2mm.Require to obtain the square flat-top hot spot that the length of side is 200um under applying focal length is the focus lamp of 200mm through DOE.In order to obtain best shaping effect, need by incident light source first beam-expanding collimation be about 6mm to diameter.
Performing step ginseng embodiment 1, difference is:
The first step, carries out theoretical modeling design according to above-mentioned requirements, and generates GDS file, and in GDS file, the length of side of square step is 4mm;
7th step, uses the lithography mask version prepared to expose the photoresist on quartz substrate, develop and fixing operation, thus on quartz substrate, obtains the photoetching offset plate figure consistent with the GDS file designed;
8th step, as described in Example 1, the different square step be in be the length of side the be 4mm obtained;
All the other steps are identical with embodiment 1.
Embodiment 3 realizes the DOE(fluted body of circular flat hot spot):
Have a laser beam incident light source, its wavelength is 532nm, and spot diameter is 2mm.Require to obtain the circular flat hot spot that diameter is 200um under applying focal length is the focus lamp of 200mm through DOE.In order to obtain best shaping effect, need by incident light source first beam-expanding collimation be about 6mm to diameter.
Performing step ginseng embodiment 1, difference is:
The first step, carries out theoretical modeling design according to above-mentioned requirements, and generates GDS file, and diameter circular in GDS file is 4mm;
8th step, as described in Example 1, the different circular groove be in be diameter the be 4mm obtained;
All the other steps are identical with embodiment 1.
Embodiment 4 realizes the DOE(stepped ramp type of circular flat hot spot):
Have a laser beam incident light source, its wavelength is 532nm, and spot diameter is 2mm.Require to obtain the circular flat hot spot that diameter is 200um under applying focal length is the focus lamp of 200mm through DOE.In order to obtain best shaping effect, need by incident light source first beam-expanding collimation be about 6mm to diameter.
Performing step ginseng embodiment 1, difference is:
The first step, carries out theoretical modeling design according to above-mentioned requirements, and generates GDS file, and diameter circular in GDS file is 4mm;
8th step, as described in Example 1, the different step cutting pattern be in be diameter the be 4mm obtained;
All the other steps are identical with embodiment 1.
Actual shaping effect of the present invention as shown in Figure 2.
Actual use-pattern of the present invention as shown in Figure 3, has use-pattern possible in 4:
Fig. 3 a the first use-pattern of the present invention: before DOE is positioned at condenser lens, obtain flat-top hot spot after line focus.
Fig. 3 b the second use-pattern of the present invention: DOE to be positioned at after beam-expanding collimation mirror before condenser lens, obtains flat-top hot spot after line focus.
Fig. 3 c the third use-pattern of the present invention: before DOE is positioned at beam-expanding collimation mirror and condenser lens, obtain flat-top hot spot after line focus.
Fig. 3 d the 4th kind of use-pattern: DOE of the present invention is positioned in the middle of beam-expanding collimation mirror and before condenser lens, obtains flat-top hot spot after line focus.
Claims (3)
1. be a diffraction optical element for flat top beam by Gauss beam reshaping, described diffraction optical element is called for short DOE, described DOE can be shaped as square or circular flat light beam by circular Gaussian beam, it is characterized in that,
The DOE structure realizing square flat top beam is that the central area of quartz substrate has and only has a square indentations or step; The length of side of groove or step is determined according to application requirement; Height or the degree of depth of step or groove are determined by formula: h=λ/2* (n-1), and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is substrate refractive index;
The DOE structure realizing circular flat light beam is that the central area of quartz substrate has and only has a cylinder shape groove or step; The diameter of groove or step is determined according to application requirement; The height of step or groove or the degree of depth determine h=λ/2* (n-1) by formula, and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is substrate refractive index.
2. diffraction optical element as claimed in claim 1, it is characterized in that, the material category of described DOE is quartz glass, simple glass, ZnSe.
3. be a method for flat top beam by Gauss beam reshaping, it is characterized in that, utilize the DOE described in claim 1 to be flat top beam by Gauss beam reshaping, comprise following several mode:
The first, first use beam-expanding collimation lens by laser bundle-enlarging collimation, then through DOE, place condenser lens and obtain flat-top hot spot at shaping device rear;
The second, before DOE is placed on parallel beam expand device, places condenser lens and obtains flat-top hot spot after parallel beam expand device;
The third, obtain flat-top hot spot before DOE is put into condenser lens;
4th kind, DOE is put into beam-expanding collimation system inside, before being then put into condenser lens, obtains flat-top hot spot.
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