CN103388121B - A kind of mixing manufacture craft of high-precision metal mask plate - Google Patents
A kind of mixing manufacture craft of high-precision metal mask plate Download PDFInfo
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- CN103388121B CN103388121B CN201210139817.8A CN201210139817A CN103388121B CN 103388121 B CN103388121 B CN 103388121B CN 201210139817 A CN201210139817 A CN 201210139817A CN 103388121 B CN103388121 B CN 103388121B
- Authority
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- Prior art keywords
- electroforming
- mask plate
- manufacture craft
- metal mask
- exposure
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Links
- 239000002184 metal Substances 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000002156 mixing Methods 0.000 title claims description 17
- 238000005323 electroforming Methods 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000008020 evaporation Effects 0.000 claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims abstract description 22
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000011161 development Methods 0.000 claims description 9
- 238000005554 pickling Methods 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 7
- 238000012805 post-processing Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000007654 immersion Methods 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000012372 quality testing Methods 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000010237 hybrid technique Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000004070 electrodeposition Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000004913 activation Effects 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910001374 Invar Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 239000005708 Sodium hypochlorite Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 235000003891 ferrous sulphate Nutrition 0.000 description 2
- 239000011790 ferrous sulphate Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 2
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- 240000009087 Crescentia cujete Species 0.000 description 1
- 235000005983 Crescentia cujete Nutrition 0.000 description 1
- 235000009797 Lagenaria vulgaris Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
- B41C1/142—Forme preparation for stencil-printing or silk-screen printing using a galvanic or electroless metal deposition processing step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
- B41C1/147—Forme preparation for stencil-printing or silk-screen printing by imagewise deposition of a liquid, e.g. from an ink jet; Chemical perforation by the hardening or solubilizing of the ink impervious coating or sheet
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
- C23F1/04—Chemical milling
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Electroluminescent Light Sources (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a kind of preparation technology of high-precision metal mask plate, processing step includes:By electric cast nickel alloy, certain thickness substrate is made, opening (through hole) is carried on substrate;By etch process in a facet etch certain depth groove of mask substrate, make the opening size of etching one side more than non-etching face opening size, and hole wall is rounded, forms taper.Using the metal mask plate that the hybrid technique of electroforming plus etching is prepared, the advantages of according to having low cost, perforate Functionality, quality and appealing design, perforate high precision, and the thickness of effective template is reduced, improve the evaporation film-forming rate during mask plate evaporation.
Description
Technical field
The present invention relates to a kind of manufacture craft of evaporation mask plate, belong to material and prepare and manufacture field, specifically relate to
And a kind of preparation technology of OLED evaporations high-precision mask plate.
Background technology
Now, with the development and the arriving of information-intensive society of multimedia technology, the requirement to flat-panel monitor performance is more next
It is higher.Three kinds of Display Techniques are newly occurred in that in recent years:Plasma display, Field Emission Display and display of organic electroluminescence
(Abbreviation OLED), the deficiency of cathode-ray tube and liquid crystal display is compensate for a certain extent.Wherein, organic electroluminescent
Display has from a series of advantages such as main light emission, low-voltage direct-current driving, all solidstate, the wide, various colors in visual angle, with liquid crystal
Display is compared, and display of organic electroluminescence does not need backlight, and visual angle is big, and power is low, and its response speed can reach liquid crystal
1000 times of display, its manufacturing cost is but less than the liquid crystal display of equal resolution ratio.Therefore, display of organic electroluminescence
Have broad application prospects, be counted as pole and assign one of following flat panel display of competitiveness.
Top light emitting organic display(OLED)Because its have it is all solid state, actively luminous, high-contrast, ultra-thin, low-power consumption,
Without visual angle limitation, fast response time, antidetonation, working range is wide, be easily achieved Flexible Displays and many advantages, such as 3D shows, gradually
As following 20 years most fast new Display Techniques of growing up.
Conventional top emitting OLED structure as other OLED structures, by anode(First electrode), negative electrode(Second electricity
Pole)And the organic luminous layer between anode and negative electrode is constituted.The luminescence mechanism and process of OLED are from yin, yang the two poles of the earth point
Not Zhu Ru electronics and hole, the electronics being injected into and hole transmit in organic layer, and is combined in luminescent layer, so as to excite hair
Photosphere molecule produces singlet exciton, singlet exciton attenuation and lights.At present, the anode of existing bottom-emission OLED
Mostly with indium oxide-tin(ITO)Used as raw material, with radio frequency sputtering method plated film to form electrode, film is single-layer membrane structure.Top
Portion's emitting OLED-device then plates one layer of reflecting layer again on transparent anode ITO.But in general, manufactured using radio frequency sputtering method
Ito anode, is easily caused its surface irregularity by bad influence of technology controlling and process factor, and then causes its surface to produce sophisticated thing
Matter or thrust.In addition, the process of high-temperature calcination and recrystallization can also provide the chance that hole is emitted directly toward negative electrode, so that leakage
Electric current increases, and influences the luminous efficiency of OLED.In addition, it is larger with the electrode resistance that ITO makes, easily increase heat production and power consumption.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art.Therefore, one object of the present invention
It is to propose a kind of manufacture craft of evaporation mask plate, the method system that can effectively solve the chemical etching of traditional handicraft use
The standby mask plate for obtaining there are problems that the difficult demoulding,.
The present invention relates to a kind of manufacture craft of evaporation mask plate, this kind of technique includes electroforming(Electro-deposition)Technique and erosion
Carving technology.
Specifically, the manufacture craft includes electroforming at least one times(Electro-deposition)One side etching at least one times.
Specifically, the manufacture craft is first to carry out electroforming(Electro-deposition)Technique, then it is etched technique.
Specifically, electroforming(Electro-deposition)What technique included comprises the following steps that:
A, core pre-treatment:By core oil removing, pickling, sandblasting, to remove the oil stain impurity on surface, and surface is polished light
It is sliding;
B, pad pasting:Mandrel surface is carried out into pad pasting;
C, exposure:Figure open area is exposed, so that unexposed area dry film is removed by developing, exposure is left
Part is making the diaphragm of follow-up electroforming step;
D, surface development:Unexposed portion in step of exposure c is developed, leaves the part of exposure to make follow-up electroforming step
Diaphragm;
E, electroforming(Electro-deposition):Core is immersed and deposits to without dry film region electroforming material in electrotyping bath;
F, take off film:Immersion of the exposure dry film that will do not removed in developing procedure by taking off film liquid is scrubbed and taken off except clean;
G, substrate post processing:By substrate together with core oil removing, pickling, air-dry.
Specifically, what etch process included comprises the following steps that:
A, two-sided pad pasting:Mandrel surface and substrate surface are carried out into pad pasting;
B, double-sided exposure:Make regional exposure beyond recess region, so that unexposed area dry film is removed by developing, stay
The part of lower exposure is making the diaphragm of subsequent;
C, surface development:Unexposed portion in the step of exposure is developed, leaves the part of exposure to make subsequent etch
The diaphragm of step;
D, one side etching:Method using etching is corroded by etching solution to the exposed surface of electroforming substrate;
E, take off film:Immersion of the exposure dry film that will do not removed in developing procedure by taking off film liquid is scrubbed and taken off except clean;
F, post processing:By the mask plate after etching together with core oil removing, pickling, air-dry;
G, stripping:Mask plate is stripped down from core;
H, detection:Mask plate under peeling off is carried out into quality testing;
I, assembling:The mask plate for detecting qualified is fixed on by any one mode in welding, glue, nut piece and is covered
On template framework, mask assembly is formed;
J, finished product detection:The mask assembly that will be assembled carries out quality testing;
K, packaging:Qualified mask plate component Package casing, finished product shipment will be detected.
More specifically, the specific process parameter of electroforming process is as follows:
(1)Pre-treatment parameter:The oil removing time:1~2min
Pickling time:1~2min
Blast time:1~2min
Blasting pressure:2.0kg/cm2
(2)Pad pasting parameter:Temperature:110℃
Speed:1.4m/min
Pressure:0.6MPa
(3)Exposure parameter:Energy:100mj~600mj
Power:8w
(4)Photographic parameter:0.7%~0.9%Na2CO3Solution
(5)Activation parameter:Soak time:8min~10min,
Activation temperature:25~35 DEG C,
Activation solution concentration:1~2mol/L
(6)Electroforming process parameter:PH 3.0~3.8
35~40 DEG C of temperature
1~1.7A/dm of current density2
(7)Electroforming solution is constituted:225~255g/L of nickel sulfate
35~45g/L of nickel chloride
36~43g/L of ferrous sulfate
(8)The additive of electroforming solution:0.5~5ml/L of stabilizer
0.5~5ml/L of wetting agent
Walk 0.5~5ml/L of agent
Specifically, electroforming(Electro-deposition)The middle cathode base for using is stainless steel 201,202,301,304,420J1,
Any one in 420J2;Anode is using any one in anode nickel block, anode nickel plates.
Specifically, the substrate thickness that electroforming is obtained is 10~50 μm, and electroforming material is Magnetic nickel or nickel alloy material.Nickel
Alloy material is the one kind in dilval, nickel cobalt (alloy), Perminvar.
Specifically, the sectional elevation of electroforming formation opening is tapered.
Specifically, it is 0.01~0.1mm that electroforming forms opening size, it is preferable that electroforming forms opening optimum size and is
0.01~0.05mm.
Specifically, the parameter of etch process is:
(1)The specific composition of etching solution:160~230g/L of ferric trichloride
1~4g/L of hydrochloric acid
The g/L of sodium hypochlorite 0.1~1
(2)Specific process parameter:Proportion 1.4~1.5
PH 1.4~2.0
45~55 DEG C of temperature
45~50kg/cm of pressure2。
Specifically, etch depth is 50%~100% electroforming substrate thickness, it is preferable that etch depth most preferably 100%
Electroforming substrate thickness.
Specifically, etched recesses edge overlaps with evaporation face edge of opening, and etched recesses sectional elevation is in bowl-type, etching
The profile angle of groove is 30o~50o。
The opening needed for going out evaporation is directly corroded on invar alloy sheet material using the method for chemical etching compared with traditional handicraft,
The obtained opening of hybrid technique that first electroforming is etched again, hole wall is smooth, and dimensional accuracy is high, evaporation face opening size obtained in electroforming
Precision reaches ± 1 μm, and positional precision reaches ± 5 μm, and the obtained groove of etching forms bowl-shape hole wall, with the knot that is open obtained in electroforming
Close, be obtained and meet the opening that evaporation is required, the steep-taper that bowl-shape hole wall has, it is to avoid evaporation process middle hole wall is to deposition material
Block, improve evaporation film-forming rate, and smooth electroforming hole wall relatively etches hole wall and changes one's clothes the demoulding, will not to being deposited with material
Material is impacted.
Brief description of the drawings
Of the invention above-mentioned and/or additional aspect and advantage will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that.
Fig. 1 is the open profile figure made using double-sided etching process:
Wherein, corroded from invar sheets two sides respectively using two-sided etching, the section of formation is calabash shaped opening, but due to
It is etched to and subtracts into technique, and there is side corrosiveness so that the opening size l1 of sheet surface is more than preliminary dimension l2, size essence
Bad control is spent, size has deviation, and the perforated wall that etching is formed is coarse rough.T1 is ito surface etch depth, and t2 is steaming
Surfacing etch depth.
Fig. 2 is the open profile figure that electroforming process of the present invention makes:
Wherein, electroforming thickness is t'z, and l'1 is ito surface opening size, and 1 is evaporation face, and 2 is ito surface(During electroforming and core
It is close to).Because electroforming is additive process, and it is electro-deposition, is open as metal ion is attached to light-sensitive surface or photoresists clone's shape
Into, therefore opening wall surface is smooth, and opening size high precision, l'1 is controlled well, t'z also dependent on any plus-minus is needed, with etching
Technique is limited difference by invar sheets model.
Fig. 3 is that the present invention continues to etch the open profile figure for making on the basis of electroforming:
Wherein, 1 is evaporation face, and 2 is ito surface, and 3 is etched recesses, and l'1 is ito surface opening size, and as effectively evaporation is opened
Mouth thickness, t'2 is the depth of etched recesses, and t'1+t'2=t'z, α are the profile angle of etched recesses.t'2=(50%~100%)
t'z
Fig. 4 is the stereogram of high-precision metal mask plate:
Wherein, 1 is evaporation face, and 3 is etched recesses, and 4 is closely metal mask plate high.
Specific embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from start to finish
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
It is exemplary to scheme the embodiment of description, is only used for explaining the present invention, and is not considered as limiting the invention.
The present invention produces the tapered mask plate of opening band using the hybrid technique that first electroforming is etched again.
1st, the step of electroforming process is as follows:
Core pre-treatment → one side pad pasting → one side exposure → surface development → electroforming(Electro-deposition)→ take off film → substrate after
Treatment.
Comprise the following steps that:
Stainless steel core die 304 is carried out the early stage treatment of oil removing, pickling and sandblasting, the dirt and impurity on its surface is removed,
Increase its surface roughness.One side patch light-sensitive surface or coating photoresists, will be wanted by scan exposure on stainless steel 304 core
Light-sensitive surface or the photoresists exposure in opening figure region are formed, used as electroforming diaphragm, unexposed light-sensitive surface or photoresists exist
Washed away by alkali lye in follow-up developing procedure, core is exposed and forms follow-up electroforming and wants deposited metal material area.Will be aobvious
The core of movie queen is put into electrotyping bath, adjusts electroforming parameter, and electroforming metal material is deposited to without dry film region.
Specific process parameter is as follows:
(1)Pre-treatment parameter:The oil removing time:1min
Pickling time:1min
Blast time:1min
Blasting pressure:2.0kg/cm2
(2)Pad pasting parameter:Temperature:110℃
Speed:1.4m/min
Pressure:0.6MPa
(3)Exposure parameter:Energy:300mj
Power:8w
(4)Photographic parameter:0.7%Na2CO3 solution
(5)Activation parameter:Soak time:8min
Activation temperature:25℃
Activation solution concentration is:1mol/L
(6)Electroforming process parameter:
pH 3.4
35 DEG C of temperature
Current density 1.4A/dm2
(7)Electroforming solution is constituted:Nickel sulfate 240g/L
Nickel chloride 35g/L
Ferrous sulfate 40g/L
(8)The additive of electroforming solution:
Stabilizer 2ml/L
Wetting agent 3ml/L
Walk agent 3ml/L
Above-mentioned electroforming parameter is obtained the electroforming substrate that thickness is 50 μm, and with patterns of openings, opening hole wall is smooth, size
High precision, evaporation face opening size precision obtained in electroforming reaches ± 1 μm, and positional precision reaches ± 5 μm.Smooth electroforming hole wall
Relatively etching hole wall be more easy to the demoulding, will not to being deposited with material impact
2nd, the step of etch process is as follows:
Two-sided pad pasting → double-sided exposure → surface development → one side etches → washes → take off film → post processing → stripping → inspection
Survey → assembling → finished product detection → packaging
Comprise the following steps that:
By above-mentioned electroforming gained substrate together with core, Double-face adhesive light-sensitive surface or coating photoresists, by core one side
Light-sensitive surface or photoresists expose completely;The region that substrate side will be etched retains, other regional exposures, the light-sensitive surface of exposure
Or photoresists are not corroded as diaphragm, protective substrate and core in follow-up etch process by etching solution;To not expose
The light-sensitive surface or photoresists of light are removed by alkali lye, the substrate surface that will be etched is spilt cruelly, are entered by corrosive liquids
Row corrosion, by controlling etching transfer rate or etchant concentration to realize the depth to be etched.
On the basis of the opening that original electroforming is formed, the groove of certain depth is etched, groove walls are in bowl-shape.
Specific process parameter is as follows:
(1)The specific composition of etching solution is as follows:
Ferric trichloride 200g/L
Hydrochloric acid 2g/L
The g/L of sodium hypochlorite 0.2
(2)Etch process parameters
Proportion 1.45
pH 1.4
55 DEG C of temperature
Pressure 45kg/cm2
It is 40 μm that above-mentioned etching parameter is obtained depth of groove, i.e., effectively evaporation opening thickness is 10 μm.Etching is obtained recessed
Groove forms bowl-shape hole wall, is combined with being open obtained in electroforming, is obtained and meets the opening that evaporation is required, the auger that bowl-shape hole wall has
Degree, it is to avoid evaporation process middle hole wall is blocked to deposition material, improves evaporation film-forming rate.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that:Not
Can these embodiments be carried out with various changes, modification, replacement and modification in the case of departing from principle of the invention and objective, this
The scope of invention is limited by claim and its equivalent.
Claims (15)
1. a kind of mixing manufacture craft of high-precision metal mask plate, this kind of technique includes electroforming process and etch process;It is special
Levy and be, first carry out electroforming process, then be etched technique;
Described electroforming process, its step is:Core pre-treatment → one side pad pasting → one side exposure → surface development → electroforming →
Take off film → substrate post processing;
Described etch process, its step is:Two-sided pad pasting → double-sided exposure → surface development → one side is etched → washed → takes off
Film → post processing → stripping → detection → assembling → finished product detection → packaging.
2. the mixing manufacture craft of high-precision metal mask plate according to claim 1, it is characterised in that including at least one times
Electroforming and at least one times one side etching.
3. the mixing manufacture craft of high-precision metal mask plate according to claim 1, it is characterised in that the electroforming work
The concrete technology step of skill is:
A, core pre-treatment:By core oil removing, pickling, sandblasting, to remove the oil stain impurity on surface, and surface is polished smooth;
B, one side pad pasting:Mandrel surface is carried out into pad pasting;
C, one side exposure:Figure open area is exposed, so that unexposed area dry film is removed by developing, exposure is left
Part is making the diaphragm of follow-up electroforming step;
D, surface development:Unexposed portion in step of exposure c is developed, leaves the part of exposure to make the guarantor of follow-up electroforming step
Cuticula;
E, electroforming:Core is immersed in electrotyping bath, electroforming material is deposited to without dry film region;
F, take off film:Immersion of the exposure dry film that will do not removed in developing procedure by taking off film liquid is scrubbed and taken off except clean;
G, substrate post processing:By substrate together with core oil removing, pickling, air-dry.
4. the mixing manufacture craft of high-precision metal mask plate according to claim 1, it is characterised in that the etching work
The concrete technology step of skill is:
A, two-sided pad pasting:Mandrel surface and substrate surface are carried out into pad pasting;
B, double-sided exposure:Make regional exposure beyond recess region, so that unexposed area dry film is removed by developing, leave exposure
The part of light is making the diaphragm of subsequent;
C, surface development:Unexposed portion in the step of exposure is developed, leaves the part of exposure to make subsequent
Diaphragm;
D, one side etching:Method using etching is corroded by etching solution to the exposed surface of electroforming substrate;
E, washing;
F, take off film:Immersion of the exposure dry film that will do not removed in developing procedure by taking off film liquid is scrubbed and taken off except clean;
G, post processing:By the mask plate after etching together with core oil removing, pickling, air-dry;
H, stripping:Mask plate is stripped down from core;
I, detection:Mask plate under peeling off is carried out into quality testing;
J, assembling:The mask plate for detecting qualified is fixed on mask plate by any one mode in welding, glue, nut piece
On framework, mask assembly is formed;
K, finished product detection:The mask assembly that will be assembled carries out quality testing;
L, packaging:Qualified mask plate component Package casing, finished product shipment will be detected.
5. the mixing manufacture craft of high-precision metal mask plate according to claim 1, it is characterised in that used in electroforming
Cathode base be stainless steel 201,202,301,304,420J1, any one in 420J2;Anode uses anode nickel block, sun
Any one in the nickel plate of pole.
6. the mixing manufacture craft of high-precision metal mask plate according to claim 1, it is characterised in that electroforming substrate is thick
It is 10~50 μm to spend, and electroforming material is Magnetic nickel or nickel alloy material.
7. the mixing manufacture craft of high-precision metal mask plate according to claim 6, it is characterised in that nickel alloy material
It is the one kind in dilval, nickel cobalt (alloy), Perminvar.
8. the mixing manufacture craft of high-precision metal mask plate according to claim 1, it is characterised in that electroforming is formed and opened
The sectional elevation of mouth is tapered.
9. the mixing manufacture craft of high-precision metal mask plate according to claim 1, it is characterised in that electroforming is formed and opened
Mouth size is 0.01~0.1mm.
10. the mixing manufacture craft of high-precision metal mask plate according to claim 9, it is characterised in that electroforming is formed
Opening optimum size is 0.01~0.05mm.
The mixing manufacture craft of 11. high-precision metal mask plates according to claim 1, it is characterised in that etch depth
It is 50%~100% electroforming substrate thickness.
The mixing manufacture craft of 12. high-precision metal mask plates according to claim 11, it is characterised in that etch depth
Most preferably 100% electroforming substrate thickness.
The mixing manufacture craft of 13. high-precision metal mask plates according to claim 1, it is characterised in that etched recesses
Edge overlaps with evaporation face edge of opening.
The mixing manufacture craft of 14. high-precision metal mask plates according to claim 1, it is characterised in that etched recesses
Sectional elevation is in bowl-type.
The mixing manufacture craft of 15. high-precision metal mask plates according to claim 1, it is characterised in that etched recesses
Profile angle be 30o~50o。
Priority Applications (5)
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CN201210139817.8A CN103388121B (en) | 2012-05-08 | 2012-05-08 | A kind of mixing manufacture craft of high-precision metal mask plate |
KR1020147031429A KR101911416B1 (en) | 2012-05-08 | 2013-05-07 | Mixed fabricating technique for high precision metal mask plate |
JP2015510623A JP5969114B2 (en) | 2012-05-08 | 2013-05-07 | Mixed metal mask manufacturing process |
PCT/CN2013/075226 WO2013166951A1 (en) | 2012-05-08 | 2013-05-07 | Mixed fabricating technique for high precision metal mask plate |
TW102116297A TWI513080B (en) | 2012-05-08 | 2013-05-08 | A mixed manufacturing method of a metal mask |
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CN201210139817.8A CN103388121B (en) | 2012-05-08 | 2012-05-08 | A kind of mixing manufacture craft of high-precision metal mask plate |
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CN103388121A CN103388121A (en) | 2013-11-13 |
CN103388121B true CN103388121B (en) | 2017-07-11 |
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CN201210139817.8A Expired - Fee Related CN103388121B (en) | 2012-05-08 | 2012-05-08 | A kind of mixing manufacture craft of high-precision metal mask plate |
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JP (1) | JP5969114B2 (en) |
KR (1) | KR101911416B1 (en) |
CN (1) | CN103388121B (en) |
TW (1) | TWI513080B (en) |
WO (1) | WO2013166951A1 (en) |
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CN103388121A (en) | 2013-11-13 |
JP2015518524A (en) | 2015-07-02 |
JP5969114B2 (en) | 2016-08-10 |
TW201347267A (en) | 2013-11-16 |
WO2013166951A1 (en) | 2013-11-14 |
KR20150021914A (en) | 2015-03-03 |
KR101911416B1 (en) | 2018-10-24 |
TWI513080B (en) | 2015-12-11 |
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