CN103378130A - Semiconductor structure and manufacturing process thereof - Google Patents
Semiconductor structure and manufacturing process thereof Download PDFInfo
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- CN103378130A CN103378130A CN2012101191539A CN201210119153A CN103378130A CN 103378130 A CN103378130 A CN 103378130A CN 2012101191539 A CN2012101191539 A CN 2012101191539A CN 201210119153 A CN201210119153 A CN 201210119153A CN 103378130 A CN103378130 A CN 103378130A
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- silicon germanium
- capping layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 101
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 29
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 26
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 29
- 229910052796 boron Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 26
- 229910052732 germanium Inorganic materials 0.000 claims description 19
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 10
- 238000011065 in-situ storage Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 5
- PPWPWBNSKBDSPK-UHFFFAOYSA-N [B].[C] Chemical compound [B].[C] PPWPWBNSKBDSPK-UHFFFAOYSA-N 0.000 claims 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 239000011435 rock Substances 0.000 description 89
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 206010027146 Melanoderma Diseases 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- -1 hafnium silicate oxygen compound Chemical class 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- QEQWDEBBDASYQQ-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] Chemical compound [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] QEQWDEBBDASYQQ-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 1
- VKVQZWRGTWGOKM-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Hf+4].[Hf+4] VKVQZWRGTWGOKM-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- VDNSHGNZYOIMOW-UHFFFAOYSA-N oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Zr+4] VDNSHGNZYOIMOW-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开一种半导体结构及其制作工艺，该半导体结构包含一栅极结构、一外延层以及一含碳的硅锗盖层。栅极结构位于一基底上。外延层位于栅极结构侧边的基底中。含碳的硅锗盖层位于外延层上。此外，本发明也提供形成此半导体结构的制作工艺。
The present invention discloses a semiconductor structure and a manufacturing process thereof, wherein the semiconductor structure comprises a gate structure, an epitaxial layer and a carbon-containing silicon germanium cap layer. The gate structure is located on a substrate. The epitaxial layer is located in the substrate on the side of the gate structure. The carbon-containing silicon germanium cap layer is located on the epitaxial layer. In addition, the present invention also provides a manufacturing process for forming the semiconductor structure.
Description
Technical field
The present invention relates to a kind of semiconductor structure and manufacture craft, and particularly relate to a kind of semiconductor structure and the manufacture craft thereof of SiGe cap rock on epitaxial loayer of formation one carbon containing.
Background technology
Along with semiconductor fabrication process enters into the deep-sub-micrometer epoch, the following manufacture craft of 65 nanometers (nm) for example, having seemed for the lifting of the drive current (drive current) of MOS transistor element becomes more and more important.In order to improve the usefulness of element, industry has developed so-called " strained silicon (strained-silicon) technology " at present, its principle mainly is to make the silicon crystal lattice of grid channel part produce strain, the locomotivity of electric charge when the grid passage by this strain increased, and then reach and make MOS transistor operate faster purpose.
In at present known strained silicon (strained-silicon) technology, use strained silicon (strained silicon) is arranged as the MOS transistor of substrate, take for the PMOS transistor as example, the lattice constant characteristic different from monocrystalline silicon (single crystal Si) that it utilizes SiGe (SiGe) makes silicon germanium extension layer produce on the structure strain and forms strained silicon.Because the lattice constant (lattice constant) of germanium-silicon layer is larger than silicon, this and causes mobility of carrier to increase so that the band structure of silicon (band structure) changes, and therefore can increase the speed of MOS transistor.
Yet the composition of epitaxial loayer is complicated, and its composition also may diffuse to periphery in follow-up manufacture craft, and has polluted peripheral zone.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor structure and manufacture craft thereof, its SiGe cap rock that passes through to form a carbon containing avoids the germanium in epitaxial loayer or the cap rock to become to analyze in the cap rock surface on epitaxial loayer.
In order to reach above-mentioned purpose, the invention provides the SiGe cap rock that a kind of semiconductor structure comprises a grid structure, an epitaxial loayer and a carbon containing.Grid structure is positioned in the substrate.Epitaxial loayer is arranged in the substrate of grid structure side.The SiGe cap rock of carbon containing is positioned on the epitaxial loayer.
The invention provides a kind of semiconductor fabrication process, comprise following step.At first, form a grid structure in a substrate.Then, form an epitaxial loayer in the substrate of grid structure side.Then, carry out an original position (in-situ) extension manufacture craft, form the SiGe cap rock of a carbon containing on epitaxial loayer.
The invention provides a kind of semiconductor fabrication process, comprise following step.At first, form a grid structure in a substrate.Then, form an epitaxial loayer in the substrate of grid structure side.Then, form a SiGe cap rock on epitaxial loayer.Afterwards, doping carbon is in the SiGe cap rock, and the SiGe cap rock that forms a carbon containing is on epitaxial loayer.
Based on above-mentioned, the present invention proposes a kind of semiconductor structure and manufacture craft thereof, SiGe cap rock by forming a carbon containing avoids the germanium in epitaxial loayer or the cap rock to become to analyze in the cap rock surface on epitaxial loayer, and then the stain (black spot) that suppresses the cap rock surface forms.
Description of drawings
Fig. 1-Fig. 4 is the generalized section of the semiconductor fabrication process of first embodiment of the invention;
Fig. 5-Figure 10 is the generalized section of the semiconductor fabrication process of second embodiment of the invention.
The main element symbol description
10: insulation system
110: substrate
122: resilient coating
124: dielectric layer
126: grid layer
128: cap rock
129: clearance wall
130: epitaxial loayer
132: the internal layer epi region
134: outer epi region
140a: siliceous epitaxial loayer
140b ': SiGe cap rock
140b: the SiGe cap rock of carbon containing
140c: the SiGe cap rock of boracic and carbon
C: grid passage
G: grid structure
R: groove
P1: original position (in-situ) extension manufacture craft
P2, P3, P4: doping manufacture craft
S: surface
S1, S2: end face
S3: sidewall
S4: bottom surface
Embodiment
Fig. 1-Fig. 4 illustrates the generalized section of the semiconductor fabrication process of first embodiment of the invention.
As shown in Figure 1, at first, provide a substrate 110.Substrate 110 for example is that a silicon base, contains that silicon base, one three five families are covered silicon base (for example GaN-on-silicon), a Graphene covers the semiconductor bases such as silicon base (graphene-on-silicon) or one silicon-coated insulated (silicon-on-insulator, SOI) substrate.One insulation system 10 can be formed between each transistor, so that each transistor is electrically insulated.Insulation system 10 can for example be a fleet plough groove isolation structure, but the present invention is not as limit.Form a grid structure G in substrate 110.Grid structure G can comprise one and stack structure example such as a resilient coating 122, a dielectric layer 124, a grid layer 126, a cap rock 128, and a clearance wall 129 is positioned in the substrate 110 of resilient coating 122, dielectric layer 124, grid layer 126 and cap rock 128 sides.Specifically, form the method for grid structure G, can comprise: sequentially cover a resilient coating (not illustrating), a dielectric layer (not illustrating), a grid layer (not illustrating) and a cap rock (not illustrating) in substrate 110 first comprehensively, again with these a little dielectric layer patternings, and form a resilient coating 122, a dielectric layer 124, a grid layer 126 and a cap rock 128.Then, conformably cover a clearance wall (not illustrating) in cap rock 128 and substrate 110, the recycling etching forms clearance wall 129.
As shown in Figure 2, for example carry out again the wet etching manufacture craft to carry out first dry ecthing, form two recess R in the substrate 110 of grid structure G side.After cleaning step, as shown in Figure 3, carry out a selective epitaxial (SEG) manufacture craft, to form an epitaxial loayer 130 in the recess R of grid structure G side.And before forming recess R, form after the epitaxial loayer 130, when forming even epitaxial loayer 130, can carry out an Implantation manufacture craft or an in-situ doped manufacture craft, so that required doping is mixed epitaxial loayer 130, form the source/drain of transistor unit.In the present embodiment, the end face S1 of epitaxial loayer 130 is higher than the height of the end face S2 of substrate 110, the usefulness of exerting pressure for the grid channel C of grid structure G below to increase epitaxial loayer 130, but the present invention is not as limit.In a preferred embodiment, recess R has the cross-section structure of a diamondoid cross-section structure or other shapes.In other words, the sidewall that is positioned at the recess R of grid structure G below has at least one wedge angle, so that the epitaxial loayer 130 that is formed at wherein also has diamondoid cross-section structure, so can increase the stress that epitaxial loayer 130 applies for the grid channel C between it.In the present embodiment, epitaxial loayer 130 is a silicon germanium extension layer, and the concentration of its germanium can be greater than 36%, and in order to forming a P transistor npn npn, but in other embodiments, epitaxial loayer 130 also can be a silicon carbon epitaxial layer, in order to form a N-type transistor.Perhaps, epitaxial loayer 130 can only be a siliceous epitaxial loayer also, and perhaps it can comprise the epitaxial loayer of multiple layers of different materials, and for example epitaxial loayer 130 is comprised of lower floor's one silicon germanium extension layer and upper strata one siliceous epitaxial loayer.Perhaps, before carrying out selective epitaxial (SEG) manufacture craft, optionally in each recess R, form first an epitaxial loayer (not shown), and this epitaxial loayer is the silicon germanium extension layer of the low germanium concentration of a tool, the concentration of its germanium can be less than 25%, perhaps be a siliceous epitaxial loayer, degradation problem under and element start voltage that cause excessive in order to the junction lattice constant difference of avoiding epitaxial loayer 130 and substrate 110 occurs suddenly, but the present invention is not as limit.
As shown in Figure 4, carry out an extension manufacture craft, on epitaxial loayer 130, as the reacting environment of follow-up metal silicide production technique, metal forms the problem of luming with germanium in the metal silicide production technique in order to avoid with the siliceous epitaxial loayer 140a that forms the low germanium concentration of a tool.The epitaxial loayer 130 of present embodiment is a silicon germanium extension layer, and its contained germanium matter can upwards diffuse to the surperficial S of siliceous epitaxial loayer 140a, and then causes the surperficial S of siliceous epitaxial loayer 140a to have stain (black spot) to produce.
Therefore, below the problem of the second embodiment with the formed epitaxial structure of semiconductor fabrication process that improves the first embodiment proposed.Fig. 5-Figure 10 illustrates the generalized section of the semiconductor fabrication process of second embodiment of the invention.
As follows, forming epitaxial loayer 130 (such as Fig. 3) afterwards, form the SiGe cap rock 140b of a carbon containing on epitaxial loayer 130.The method that forms can be method one as shown in Figure 5, perhaps is method two such as Fig. 6-shown in Figure 7.
Method one:
As shown in Figure 5, carry out an original position (in-situ) extension manufacture craft P1, directly form the SiGe cap rock 140b of a carbon containing on epitaxial loayer 130.Specifically, original position (in-situ) extension manufacture craft P1 is when forming the SiGe cap rock with the extension manufacture craft, and doping carbon is in cap rock simultaneously.The manufacture craft gas that original position (in-situ) extension manufacture craft P1 passes into can comprise methyl-monosilane (monomethyl silane, MMS) or many methyl-monosilanes etc., and its chemical formula can comprise (CH3) xSi
4-x; X＞1, doping carbon is in the SiGe cap rock 140b that wherein forms carbon containing simultaneously when forming the SiGe cap rock in extension, but the present invention is not as limit.
Method two:
As shown in Figure 6, form first a SiGe cap rock 140b ' on epitaxial loayer 130.Then, as shown in Figure 7, carry out a doping manufacture craft P2, doping carbon is in SiGe cap rock 140b ', and the SiGe cap rock 140b that forms a carbon containing is on epitaxial loayer 130.The manufacture craft gas of doping carbon comprises methyl-monosilane (monomethyl silane, MMS) or many methyl-monosilanes etc., and its chemical formula can comprise (CH3) xSi
4-x; X＞1, in addition, doping carbon also can utilize an Implantation manufacture craft to implement, but the present invention is not as limit.
No matter method one or method two all can form the SiGe cap rock 140b of a carbon containing on epitaxial loayer 130.In the present embodiment, the SiGe cap rock 140b of carbon containing is higher than the end face S2 of substrate 110.Because the SiGe cap rock 140b of carbon containing contains carbonaceous, therefore can prevent the germanium matter of the SiGe cap rock 140b that is arranged in the germanium matter of epitaxial loayer 130 or is arranged in carbon containing, when for example forming nickel/silicon metal silicide, follow-up manufacture craft upwards diffuses to the surface of the SiGe cap rock 140b of carbon containing, and the stain (black spot) of formation germanium matter, deteriorated formed transistorized electrical quality.Yet, when the carbon content of the SiGe cap rock 140b of carbon containing too high, also can make the SiGe cap rock 140b of carbon that the grid channel C is applied tensile stress, this stress can offset to apply compression stress for the grid channel C with original formation epitaxial loayer 130, reduces the effect that epitaxial loayer 130 puts on the grid channel C.Therefore, in a preferred embodiment, the chemical formula of the SiGe cap rock 140b of carbon containing is SiGe
xC
z, SiGe
xC
zThe Z value be that 0.1%～1%, X value is more than or equal to 0%.Moreover the distribution of the carbon content among the SiGe cap rock 140b of carbon containing can be from top to bottom a gradient and distribute.So, can be by the distribution of the carbon content among the SiGe cap rock 140b of fine setting carbon containing, the germanium matter of the SiGe cap rock 140b that effectively stops the germanium matter that is arranged in epitaxial loayer 130 or be positioned at carbon containing on the one hand diffuses to the surface; Can reduce again on the one hand the tensile stress that the SiGe cap rock 140b of carbon containing produces for the grid channel C because containing carbon.For example, in one embodiment, the distribution of the carbon content among the SiGe cap rock 140b of carbon containing can be a vertical gradient of from top to bottom successively decreasing and distribute.In addition, the distribution of the carbon content among the SiGe cap rock 140b of carbon containing also may be horizontal gradient distribution of being successively decreased by grid structure G far away and proximad etc., and the present invention is not as limit.Moreover for the germanium matter among the SiGe cap rock 140b that prevents carbon containing diffuses to the surface, the distribution of its Ge content can be a gradient of from bottom to top successively decreasing and distribute.Perhaps, because the cause that the germanium matter of epitaxial loayer 130 upwards spreads, its germanium matter diffuses among the SiGe cap rock 140b of carbon containing, also may be a gradient of from bottom to top successively decreasing and distribute.
As shown in Figure 8, form after the SiGe cap rock 140b of carbon containing, optionally carry out a doping manufacture craft P3 with doped with boron in the SiGe cap rock 140b of carbon containing, to form the SiGe cap rock 140c of a boracic and carbon.When forming the SiGe cap rock 140c of nickel/silicon metal silicide covering boracic and carbon, can consume wholly or in part the SiGe cap rock 140c of boracic and carbon.When the SiGe cap rock 140c that still has boracic and carbon was residual, the SiGe cap rock 140c that contains the boracic of boron and carbon can reduce the resistance of contact-making surface.In the present embodiment, when mixing manufacture craft P3, boron is doped among the SiGe cap rock 140b and epitaxial loayer 130 of carbon containing simultaneously.Epitaxial loayer 130 in the present embodiment is silicon germanium extension layer, and the boron that mixes is positioned at the inside of epitaxial loayer 130.Further, alternative utilizes a photoresist when the mask (not shown), make the boron that mixes only be positioned at the inside of epitaxial loayer 130, form an internal layer epi region 132, and forming an outer epi region 134 that is not doped with boron, its ectomesoderm epi region 134 coats sidewall S3 and the bottom surface S4 of internal layer epi region 132.In other embodiments, boron can only be doped among the SiGe cap rock 140b of carbon containing.
In addition, when the SiGe cap rock 140b that forms carbon containing with method two is on epitaxial loayer 130, can (such as Fig. 6) afterwards on epitaxial loayer 130 forming SiGe cap rock 140b ', the manufacture craft of mixing first P3 with doped with boron in SiGe cap rock 140b ', to form the SiGe cap rock (not illustrating) of a boracic.Then, the manufacture craft of mixing again P2, doping carbon is in the SiGe cap rock (not illustrating) of boracic, and the SiGe cap rock 140c that forms a boracic and carbon is on epitaxial loayer 130.Certainly,, can simultaneously boron be doped in the epitaxial loayer 130 during in SiGe cap rock 140b ' in doped with boron.
In addition, the time point of doped with boron in cap rock or epitaxial loayer, can be before cap rock forms first doped with boron in epitaxial loayer, or treat cap rock form after again doped with boron in cap rock.As shown in Figure 9, after (as shown in Figure 3) forms epitaxial loayer 130, can carry out first a doping manufacture craft P4, with doped with boron in epitaxial loayer 130.As shown in the figure, alternative utilizes a photoresist when the mask (not shown), make the boron that mixes only be positioned at the inside of epitaxial loayer 130, form an internal layer epi region 132, its outside then forms an outer epi region 134 that is not doped with boron, and its ectomesoderm epi region 134 coats sidewall S3 and the bottom surface S4 of internal layer epi region 132.Then, as shown in figure 10, with aforesaid method one or method two, form the SiGe cap rock 140b of carbon containing on epitaxial loayer 130.The SiGe cap rock 140b of carbon containing of this moment does not contain boron matter, therefore can be more in addition doped with boron in the SiGe cap rock 140b of carbon containing.Perhaps because epitaxial loayer 130 contained boron, so again in the follow-up manufacture craft when carrying out hot manufacture craft, the boron in the epitaxial loayer 130 is diffused to the SiGe cap rock 140b of carbon containing.Perhaps, when the SiGe cap rock 140b that forms carbon containing was on epitaxial loayer 130, doped with boron was in the SiGe cap rock 140b of carbon containing, with the SiGe cap rock 140c of direct formation one boracic and carbon simultaneously.
In addition, no matter the present invention's employing method one or method two form the SiGe cap rock 140b of carbon containing (and boron), 140c is on epitaxial loayer 130, all can form in addition again the SiGe cap rock 140b that a siliceous cap rock (not illustrating) is positioned at carbon containing (and boron), on the 140c, with the further consumption when carrying out nickel/silicon metal silicide production technique, to keep the structural integrity of below.
In sum, the present invention proposes a kind of semiconductor structure and manufacture craft thereof, SiGe cap rock by forming a carbon containing avoids the germanium in epitaxial loayer or the cap rock to become to analyze in the cap rock surface on epitaxial loayer, and the stain (black spot) that suppresses the cap rock surface forms.Particularly, the SiGe cap rock of formation carbon containing can comprise in the method on the epitaxial loayer: (1) is carried out an original position (in-situ) extension manufacture craft and is directly formed the SiGe cap rock of a carbon containing on epitaxial loayer; Perhaps, (2) form first a SiGe cap rock on epitaxial loayer, carry out a doping manufacture craft again, and doping carbon is in the SiGe cap rock, and the SiGe cap rock that forms a carbon containing is on epitaxial loayer.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (20)
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| CN107302028A (en) * | 2016-04-15 | 2017-10-27 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN113497052A (en) * | 2020-03-19 | 2021-10-12 | 铠侠股份有限公司 | Semiconductor memory device and method for manufacturing semiconductor memory device |
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