CN103368401A - Power supply conversion device with control switch - Google Patents
Power supply conversion device with control switch Download PDFInfo
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Abstract
本发明涉及一种具控制开关的电源转换装置,包含变压器模组、控制开关、电源输入单元、二极管电路、电容电路及电源输出单元。其中变压器模组包含两个独立铁芯的变压器,控制开关包含电性连接于变压器模组的一次侧的第一晶体管开关以及第二晶体管开关。本发明所提供的具控制开关的电源转换装置,当电源输入单元从一次侧提供电源时,可利用第一晶体管开关以及第二晶体管开关的交错或同时导通,使二极管电路以及电容电路随的作动,进而使电性连接在变压器模组的二次侧的电源输出单元获得高于电源输入单元的电压的输出电压,具有高电压增益、漏感能量回收以及低输入电流涟波。
The invention relates to a power conversion device with a control switch, which includes a transformer module, a control switch, a power input unit, a diode circuit, a capacitor circuit and a power output unit. The transformer module includes two independent core transformers, and the control switch includes a first transistor switch and a second transistor switch that are electrically connected to the primary side of the transformer module. The power conversion device with a control switch provided by the present invention can utilize the staggered or simultaneous conduction of the first transistor switch and the second transistor switch when the power input unit provides power from the primary side, so that the diode circuit and the capacitor circuit are turned on accordingly. Actuate, thereby causing the power output unit electrically connected to the secondary side of the transformer module to obtain an output voltage higher than the voltage of the power input unit, with high voltage gain, leakage inductance energy recovery and low input current ripple.
Description
技术领域 technical field
本发明涉及一种转换装置,特别涉及一种具控制开关的电源转换装置。 The invention relates to a conversion device, in particular to a power conversion device with a control switch.
背景技术 Background technique
传统升压(Boost)转换器是一种输出电压高于输入电压的电源转换器,当输出电压增益较低时,电路可以实现较高的转换效率;反之,在高电压增益输出时,电路上的寄生元件将会使得电路损失变大,造成转换效率降低。 The traditional boost converter is a power converter whose output voltage is higher than the input voltage. When the output voltage gain is low, the circuit can achieve high conversion efficiency; conversely, when the output voltage gain is high, the circuit The parasitic elements will increase the circuit loss and reduce the conversion efficiency.
返驰(Flyback)转换器通过一次侧与二次侧的圈数比,可得到高电压增益。因此为提高电压增益,必须增加次级侧绕组的圈数,使得变压器的漏感及铜损变大。当功率开关截止时,由于变压器的漏感会在功率开关泄极(汲极)(Drain)与源极(Source)间会产生电压突波(Spike),而造成电路的损失,也必须选择高耐压的功率开关。为了克服漏感造成的电压突波,缓冲电路(Snubber Circuit)的设计将是返驰转换器的重点,而缓冲电路由于电阻的缘故将造成一些转换的损失。 Flyback converters can obtain high voltage gain through the ratio of turns between the primary side and the secondary side. Therefore, in order to increase the voltage gain, the number of turns of the secondary side winding must be increased, which increases the leakage inductance and copper loss of the transformer. When the power switch is turned off, because the leakage inductance of the transformer will generate a voltage spike (Spike) between the drain (Drain) and the source (Source) of the power switch, which will cause circuit losses, it must also be selected to be high. Voltage-resistant power switch. In order to overcome the voltage surge caused by the leakage inductance, the snubber circuit (Snubber Circuit) design will be the focus of the flyback converter, and the snubber circuit will cause some conversion losses due to resistance.
发明内容 Contents of the invention
有鉴于此,本发明的目的在于提供一种具控制开关的电源转换装置。 In view of this, the object of the present invention is to provide a power conversion device with a control switch.
为达到上述目的,本发明提供一种具控制开关的电源转换装置,所述具控制开关的电源转换装置包含: In order to achieve the above object, the present invention provides a power conversion device with a control switch, and the power conversion device with a control switch includes:
一变压器模组,其具有一一次侧及对应所述一次侧的一二次侧,所述一次侧包含一第一绕组线圈及一第二绕组线圈,所述第一绕组线圈具有一第一端及一第二端,第二绕组线圈具有一第三端及一第四端,且所述二次侧包含一第三绕组线圈及一第四绕组线圈,所述第三绕组线圈具有一第五端及一第六端,所述第四绕组线圈具有一第七端及一第八端,其中所述第六端电性连接所述第七端,所述第一端与第二端之间还包含一第一激磁电感,所述第三端与第四端之间还包含第二激磁电感; A transformer module, which has a primary side and a secondary side corresponding to the primary side, the primary side includes a first winding coil and a second winding coil, the first winding coil has a first end and a second end, the second winding coil has a third end and a fourth end, and the secondary side includes a third winding coil and a fourth winding coil, the third winding coil has a first Five terminals and a sixth terminal, the fourth winding coil has a seventh terminal and an eighth terminal, wherein the sixth terminal is electrically connected to the seventh terminal, and the connection between the first terminal and the second terminal A first magnetizing inductance is also included between, and a second magnetizing inductance is also included between the third end and the fourth end;
一控制开关,其包含一第一晶体管开关及一第二晶体管开关,所述第一晶体管开关的一泄极端电性连接至所述第二端,所述第一晶体管开关的一源极端电性连接至一接地,所述第二晶体管开关的一泄极端电性连接至所述第四端,所述第二晶体管开关的一源极端电性连接至所述接地; A control switch, which includes a first transistor switch and a second transistor switch, a drain end of the first transistor switch is electrically connected to the second end, a source end of the first transistor switch is electrically connected connected to a ground, a drain terminal of the second transistor switch is electrically connected to the fourth terminal, and a source terminal of the second transistor switch is electrically connected to the ground;
一电源输入单元,其包含一第一电极端及一第二电极端,所述第一电极端电性连接至所述第一端及第三端,所述第二电极端电性连接至所述接地; A power input unit, which includes a first electrode terminal and a second electrode terminal, the first electrode terminal is electrically connected to the first terminal and the third terminal, and the second electrode terminal is electrically connected to the said grounding;
一二极管电路,其包含一第一二极管、一第二二极管、一第三二极管及一第四二极管,所述第一二极管的一P型接合端电性连接至所述第二端,所述第一二极管的一N型接合端电性连接至所述第二二极管的一P型接合端,所述第三二极管的一N型接合端电性连接至所述第八端,所述第三二极管的一P型接合端电性连接至所述第二二极管的一N型接合端,所述第四二极管的一P型接合端电性连接至所述第三二极管的一N型接合端; A diode circuit, which includes a first diode, a second diode, a third diode and a fourth diode, a P-type junction end of the first diode is electrically connected To the second end, an N-type junction end of the first diode is electrically connected to a P-type junction end of the second diode, and an N-type junction end of the third diode end is electrically connected to the eighth end, a P-type junction end of the third diode is electrically connected to an N-type junction end of the second diode, and a junction end of the fourth diode is electrically connected to an N-type junction end of the second diode. a P-type junction electrically connected to an N-type junction of the third diode;
一电容电路,其包含一第一电容、一第二电容、一第三电容及一第四电容,其中,所述第一电容的一端电性连接至所述第二二极管的N型接合端,所述第一电容的另一端电性连接至所述接地,所述第二电容与第三电容的一端电性连接至所述第五端并在另一端分别连接于所述第三二极管的P型接合端与第四二极管的一N型接合端,所述第四电容的一端电性连接至所述第二二极管的P型接合端,所述第四电容的另一端电性连接至所述第二晶体管开关的泄极端;以及 A capacitor circuit, which includes a first capacitor, a second capacitor, a third capacitor and a fourth capacitor, wherein one end of the first capacitor is electrically connected to the N-type junction of the second diode terminal, the other terminal of the first capacitor is electrically connected to the ground, one terminal of the second capacitor and the third capacitor are electrically connected to the fifth terminal and the other terminals are respectively connected to the third two The P-type junction end of the pole tube and an N-type junction end of the fourth diode, one end of the fourth capacitor is electrically connected to the P-type junction end of the second diode, and the fourth capacitor is electrically connected to the P-type junction end of the second diode. the other end is electrically connected to the drain end of the second transistor switch; and
一电源输出单元,其具有一端电性连接于所述第四二极管的N型接合端以及另一端电性连接于所述接地。 A power output unit has one end electrically connected to the N-type junction end of the fourth diode and the other end electrically connected to the ground.
作为优选方案,其中所述第一晶体管开关还包含一闸极端。 As a preferred solution, the first transistor switch further includes a gate terminal.
作为优选方案,其中所述第二晶体管开关还包含一闸极端。 As a preferred solution, the second transistor switch further includes a gate terminal.
作为优选方案,其中所述第一晶体管开关或第二晶体管开关为一金氧半场效晶体管。 As a preferred solution, the first transistor switch or the second transistor switch is a metal oxide semiconductor field effect transistor.
作为优选方案,其中所述第一电极端为一正电极端。 As a preferred solution, wherein the first electrode terminal is a positive electrode terminal.
作为优选方案,其中所述第二电极端为一负电极端。 As a preferred solution, wherein the second electrode terminal is a negative electrode terminal.
作为优选方案,其中所述电源输出单元还包含一负载。 As a preferred solution, the power output unit further includes a load.
本发明所提供的具控制开关的电源转换装置至少包含以下优点:具有高电压增益、漏感能量回收以及低输入电流涟波。 The power conversion device provided by the present invention has at least the following advantages: high voltage gain, leakage inductance energy recovery and low input current ripple.
附图说明 Description of drawings
图1为本发明一实施例具控制开关的电源转换装置的电路图; 1 is a circuit diagram of a power conversion device with a control switch according to an embodiment of the present invention;
图2为图1具控制开关的电源转换装置的动作波形图; FIG. 2 is an action waveform diagram of the power conversion device with a control switch in FIG. 1;
图3为图1具控制开关的电源转换装置的电路动作原理图之一; Fig. 3 is one of the schematic diagrams of the circuit operation of the power conversion device with a control switch in Fig. 1;
图4为图1具控制开关的电源转换装置的电路动作原理图之二; Figure 4 is the second schematic diagram of the circuit action of the power conversion device with a control switch in Figure 1;
图5为图1具控制开关的电源转换装置的电路动作原理图之三。 FIG. 5 is the third schematic diagram of the circuit operation of the power conversion device with a control switch in FIG. 1 .
【主要元件符号说明】 [Description of main component symbols]
具控制开关的电源转换装置-1;变压器模组-10;第一绕组线圈-101;第一端-101a;第二端-101b;第二绕组线圈-102;第三端-102a;第四端-102b;第三绕组线圈-103;第五端-103a;第六端-103b;第四绕组线圈-104;第七端-104a;第八端-104b;第一电容-C1;第二电容-C2;第三电容-C3;第四电容-Cb;泄极端-D;第一二极管-D1;第二二极管-D2;第三二极管-D3;第四二极管-D4;闸极端-G;第一激磁电感-Lm1;第二激磁电感-Lm2;负载-Ro;源极端-S;第一晶体管开关-S1;第二晶体管开关-S2;电源输入单元-Vin;电源输出单元-Vo;流经负载Ro的电流-Io;流经第一晶体管开关S1的电流-iS1;流经第二晶体管开关S2的电流-iS2;流经第一电容C1的电流-iC1;流经第二电容C2的电流- iC2;流经第三电容C3的电流-iC3;流经第一二极管D1的电流-iD1;流经第二二极管D2的电流-iD2;流经第三二极管D3的电流-iD3;流经第四二极管D4的电流-iD4;第三绕组线圈103的电流-iLS;第一激磁电感Lm1的电流-iLm1;第二激磁电感Lm2的电流-iLm2;流入第一变压器的一次侧的电流-iLK1;流入第二变压器的一次侧的电流-iLK2;第一电容C1的电压-VC1;第二电容C2的电压-VC2;第三电容C3的电压-VC3;第四电容Cb的电压VCb;第三绕组线圈103的电压-VLS1;第四绕组线圈104的电压-VLS2;第一晶体管开关S1的泄极端D的电压-VDS1;第二晶体管开关S2的泄极端D的电压-VDS2;第一晶体管开关S1的闸极端G的控制信号-VGS1;第二晶体管开关S2的闸极端G的控制信号-VGS2;第一激磁电感Lm1的电压-VLm1;第二激磁电感Lm2的电压-VLm2。
Power conversion device with control switch-1; transformer module-10; first winding coil-101; first end-101a; second end-101b; second winding coil-102; third end-102a; fourth terminal-102b; third winding coil-103; fifth terminal-103a; sixth terminal-103b; fourth winding coil-104; seventh terminal-104a; eighth terminal-104b; first capacitor-C 1 ; Second capacitor-C 2 ; third capacitor-C 3 ; fourth capacitor-C b ; drain terminal-D; first diode-D 1 ; second diode-D 2 ; third diode-D 3 ; fourth diode-D 4 ; gate terminal-G; first magnetizing inductance-L m1 ; second magnetizing inductance-L m2 ; load-R o ; source terminal-S; first transistor switch-S 1 ; The second transistor switch-S 2 ; the power input unit-V in ; the power output unit-V o ; the current-I o flowing through the load R o ; the current-i S1 flowing through the first transistor switch S 1 ; The current-i S2 of the second transistor switch S2 ; the current-i C1 flowing through the first capacitor C1 ; the current-i C2 flowing through the second capacitor C2 ; the current-i C3 flowing through the third capacitor C3 ; The current-i D1 flowing through the first diode D1 ; the current-i D2 flowing through the second diode D2 ; the current-i D3 flowing through the third diode D3 ; The current-i D4 of the pole tube D4 ; the current-i LS of the
具体实施方式 Detailed ways
为让本发明的上述目的、特征和特点更明显易懂,下文配合附图将本发明相关实施例详细说明如下。 In order to make the above objects, features and features of the present invention more comprehensible, the following detailed descriptions of the relevant embodiments of the present invention are as follows with reference to the accompanying drawings.
请参阅图1,图1为本发明一实施例具控制开关的电源转换装置的电路图。 Please refer to FIG. 1 . FIG. 1 is a circuit diagram of a power conversion device with a control switch according to an embodiment of the present invention.
由图1可知,具控制开关的电源转换装置1包含变压器模组10、控制开关、电源输入单元Vin、二极管电路、电容电路以及电源输出单元Vo。
As can be seen from FIG. 1 , the
变压器模组10可包含两个独立铁芯的变压器,每个变压器具有一次侧与对应此一次侧的二次侧。详言之,第一变压器的一次侧包含第一绕组线圈101;第二变压器的一次侧包含第二绕组线圈102。第一绕组线圈101具有第一端101a与第二端101b,第二绕组线圈102具有第三端102a与第四端102b,且第一变压器的二次侧包含第三绕组线圈103;第二变压器的二次侧包含第四绕组线圈104。第三绕组线圈103具有第五端103a与第六端103b,第四绕组线圈104具有第七端104a与第八端104b。其中第六端103b电性连接第七端104a,第一端101a与第二端101b之间还包含第一激磁电感Lm1,第三端102a与第四端102b之间还包含第二激磁电感Lm2。
The
控制开关可包含第一晶体管开关S1以及第二晶体管开关S2,以作为功率开关。第一晶体管开关S1的泄极端(汲极端(Drain))D电性连接至第二端101b,第一晶体管开关S1的源极端S电性连接至接地(ground),第二晶体管开关S2的泄极端(汲极端(Drain))D电性连接至第四端102b,第二晶体管开关S2的源极端S电性连接至接地。
The control switch may include a first transistor switch S 1 and a second transistor switch S 2 as power switches. The drain terminal (Drain) D of the first transistor switch S1 is electrically connected to the
详言之,第一晶体管开关S1及/或第二晶体管开关S2可为金氧半场效晶体管(metal-oxide-semiconductor field effect transistor, MOSFET)或双极性接面晶体管(bipolar junction transistor, BJT),但不限定于此。其中,如此实施例中,当第一晶体管开关S1与第二晶体管开关S2都为金氧半场效晶体管时,第一晶体管开关S1与第二晶体管开关S2包含用以输入控制信号的闸极端G。 Specifically, the first transistor switch S1 and/or the second transistor switch S2 can be a metal-oxide-semiconductor field effect transistor (MOSFET) or a bipolar junction transistor (bipolar junction transistor). , BJT), but not limited to this. Wherein, in such an embodiment, when both the first transistor switch S1 and the second transistor switch S2 are metal-oxide-semiconductor field-effect transistors, the first transistor switch S1 and the second transistor switch S2 include input control signals The gate terminal G.
电源输入单元Vin包含第一电极端与第二电极端。电源输入单元Vin的第一电极端电性连接至第一端101a与第三端102a,电源输入单元Vin的第二电极端电性连接至接地。其中,电源输入单元Vin的第一电极端可为正电极端;电源输入单元Vin的第二电极端可为负电极端,但不限定于此。
The power input unit Vin includes a first electrode terminal and a second electrode terminal. The first terminal of the power input unit Vin is electrically connected to the
二极管电路包含第一二极管D1、第二二极管D2、第三二极管D3以及第四二极管D4。第一二极管D1的P型接合端电性连接至第二端101b,第一二极管D1的N型接合端电性连接至第二二极管D2的P型接合端,第三二极管D3的N型接合端电性连接至第八端104b,第三二极管D3的P型接合端电性连接至第二二极管D2的N型接合端,第四二极管D4的P型接合端电性连接至第三二极管D3的N型接合端。
The diode circuit includes a first diode D 1 , a second diode D 2 , a third diode D 3 and a fourth diode D 4 . The P-type junction end of the first diode D1 is electrically connected to the
电容电路包含第一电容C1、第二电容C2、第三电容C3以及第四电容Cb。其中第一电容C1的一端电性连接至第二二极管D2的N型接合端,第一电容C1的另一端电性连接至接地,第二电容C2与第三电容C3的一端电性连接至第五端103a,且第二电容的另一端连接在第三二极管D3的P型接合端,第三电容C3的另一端连接在第四二极管D4的N型接合端,第四电容Cb的一端电性连接至第二二极管D2的P型接合端,第四电容Cb的另一端电性连接至第二晶体管开关S2的泄极端D。
The capacitor circuit includes a first capacitor C 1 , a second capacitor C 2 , a third capacitor C 3 and a fourth capacitor C b . One end of the first capacitor C1 is electrically connected to the N-type junction of the second diode D2 , the other end of the first capacitor C1 is electrically connected to the ground, the second capacitor C2 and the third capacitor C3 One end of the second capacitor is electrically connected to the
电源输出单元Vo具有一端电性连接在第四二极管D4的N型接合端以及另一端电性连接至接地。详言之,电源输出单元Vo处还包含负载Ro。 The power output unit V o has one end electrically connected to the N-type junction end of the fourth diode D4 and the other end electrically connected to the ground. In detail, the power output unit V o also includes a load R o .
如图2-图5所示,各电路图中的符号分别表示如下:Io:流经负载Ro的电流; iS1:流经第一晶体管开关S1的电流;iS2:流经第二晶体管开关S2的电流;iC1:流经第一电容C1的电流;iC2:流经第二电容C2的电流;iC3:流经第三电容C3的电流; iD1:流经第一二极管D1的电流;iD2:流经第二二极管D2的电流; iD3:流经第三二极管D3的电流;iD4:流经第四二极管D4的电流;iLS:第三绕组线圈103的电流;iLm1:第一激磁电感Lm1的电流;iLm2:第二激磁电感Lm2的电流;iLK1:流入第一变压器的一次侧的电流;iLK2:流入第二变压器的一次侧的电流;VC1:第一电容C1的电压;VC2:第二电容C2的电压;VC3:第三电容C3的电压;VCb:第四电容Cb的电压;VLS1:第三绕组线圈103的电压;VLS2:第四绕组线圈104的电压; VDS1:第一晶体管开关S1的泄极端D的电压;VDS2:第二晶体管开关S2的泄极端D的电压;VGS1:第一晶体管开关S1的闸极端G的控制信号;VGS2:第二晶体管开关S2的闸极端G的控制信号;VLm1:第一激磁电感Lm1的电压;VLm2:第二激磁电感Lm2的电压。
As shown in Figure 2-Figure 5, the symbols in each circuit diagram are represented as follows: I o : the current flowing through the load R o ; i S1 : the current flowing through the first transistor switch S 1 ; i S2 : the current flowing through the second The current of the transistor switch S 2 ; i C1 : the current flowing through the first capacitor C 1 ; i C2 : the current flowing through the second capacitor C 2 ; i C3 : the current flowing through the third capacitor C 3 ; i D1 : the current flowing through the third capacitor C 3 ; i D2 : current flowing through the second diode D 2 ; i D3 : current flowing through the third diode D 3 ; i D4 : flowing through the fourth diode The current of tube D4 ; i LS : the current of the third
请同时参阅图1、图2与图3,图2为图1具控制开关的电源转换装置的动作波形图;图3为图1具控制开关的电源转换装置的电路动作原理图之一。 Please refer to FIG. 1 , FIG. 2 and FIG. 3 at the same time. FIG. 2 is an action waveform diagram of the power conversion device with control switch in FIG. 1 ; FIG. 3 is one of the circuit action schematic diagrams of the power conversion device with control switch in FIG. 1 .
由图2可知,具控制开关的电源转换装置1的电路动作至少包含四种操作模式。例如:模式一为0 t(D-0.5)T(例如,t0~t1);模式二为(D-0.5)Tt0.5T(例如,t1~t2);模式三为0.5TtDT(例如,t2~t3);模式四为DTtT(例如,t3~ t0)。其中,图2中的VGS1与VGS2分别为第一晶体管开关S1与第二晶体管开关S2的闸极端G的控制信号。
It can be seen from FIG. 2 that the circuit operation of the
请参阅图1、图2与图3,当具控制开关的电源转换装置1操作在模式一(t0~ t1)时,具控制开关的电源转换装置1其电路动作原理(等效电路)如图3所示:第一晶体管开关S1以及第二晶体管开关S2为导通;第一二极管D1、第二二极管D2、第三二极管D3以及第四二极管D4为逆偏截止;第一激磁电感Lm1与第二激磁电感Lm2进行储能。
Please refer to FIG. 1 , FIG. 2 and FIG. 3 , when the
接着,请参阅图1、图2与图4,图4为图1具控制开关的电源转换装置的电路动作原理图之二。 Next, please refer to FIG. 1 , FIG. 2 and FIG. 4 . FIG. 4 is the second schematic diagram of the circuit operation of the power conversion device with control switch in FIG. 1 .
当具控制开关的电源转换装置1操作在模式二(t1~t2)时,具控制开关的电源转换装置1的电路动作原理(等效电路)如图4所示:第一晶体管开关S1与第二二极管D2、第四二极管D4为导通;第二晶体管开关S2与第一二极管D1、第三二极管D3为截止。
When the
接着,请参阅图1、图2与图3。当具控制开关的电源转换装置1操作在模式三(t2~ t3)时,其电路的动作原理与模式一相同,具控制开关的电源转换装置1的电路动作原理(等效电路)如图3所示:第一晶体管开关S1以及第二晶体管开关S2为导通;第一二极管D1、第二二极管D2、第三二极管D3以及第四二极管D4为逆偏截止;第一激磁电感Lm1与第二激磁电感Lm2进行储能。
Next, please refer to FIG. 1 , FIG. 2 and FIG. 3 . When the
之后,请参阅图1、图2与图5,图5为图1具控制开关的电源转换装置的电路动作原理图之三。 After that, please refer to FIG. 1 , FIG. 2 and FIG. 5 . FIG. 5 is the third schematic diagram of the circuit operation of the power conversion device with control switch in FIG. 1 .
当具控制开关的电源转换装置1操作在模式四(t3~t0)时,具控制开关的电源转换装置1的电路动作原理(等效电路)如图5所示:第二晶体管开关S2与第一二极管D1、第三二极管D3为导通;第一晶体管开关S1与第二二极管D2、第四二极管D4为截止。
When the
承上述,经由激磁电感的伏-秒平衡可得到理想电压增益为:Vo / Vin =;其中,Vo为电源输出单元;Vin为电源输入单元;n为变压器模组10的线圈匝数比(例如:二次侧的线圈匝数/一次侧的线圈匝数);D为工作周期。 Based on the above, the ideal voltage gain can be obtained through the volt-second balance of the magnetizing inductance: V o / V in = ; Wherein, V o is a power output unit; V in is a power input unit; n is the coil turns ratio of the transformer module 10 (for example: the coil turns of the secondary side/the coil turns of the primary side); D is the working cycle.
由上述可知,本发明所述具控制开关的电源转换装置包含以下的特点: From the above, it can be seen that the power conversion device with control switch of the present invention includes the following features:
1.通过耦合电感匝比与整流倍压电路使输出端(如电源输出单元的负载处)可获得高电压增益; 1. The output terminal (such as the load of the power output unit) can obtain high voltage gain through the coupling inductor turn ratio and rectification voltage doubler circuit;
2.利用两组功率开关(如第一晶体管开关S1与第二晶体管开关S2)错相导通,使输入大电流可平均分流,进而降低元件导通损耗,也有低输入电流涟波的特点; 2. Utilize two sets of power switches (such as the first transistor switch S 1 and the second transistor switch S 2 ) to be turned on out of phase, so that the input large current can be divided evenly, thereby reducing the conduction loss of the element, and also having low input current ripple characteristics;
3.具有类似主动箝位的功能,能将漏感能量回收至输出端,有效抑制开关突波电压,进而使转换效率更加提升;并且,两组功率开关都被设计于低压侧(例如,一次侧),开关电压应力低于输出电压,零件选用可选择低耐压值设计。 3. It has a function similar to active clamping, which can recycle the leakage inductance energy to the output terminal, effectively suppress the switch surge voltage, and further improve the conversion efficiency; moreover, both sets of power switches are designed on the low-voltage side (for example, primary side), the switching voltage stress is lower than the output voltage, and the parts can be selected with low withstand voltage design.
以上所述,仅为本发明的较佳实施例,并非用以限定本发明的专利保护范围,任何本领域的普通技术人员在不脱离本发明专利精神所作的均等变化与修饰等,均同理属于本发明的专利保护范围。 The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent protection of the present invention. Any equivalent changes and modifications made by those skilled in the art without departing from the spirit of the patent of the present invention are all the same. Belong to the patent protection scope of the present invention.
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TWI581552B (en) * | 2015-11-27 | 2017-05-01 | 國立臺灣科技大學 | Boost converter |
TWI625033B (en) * | 2017-03-31 | 2018-05-21 | 崑山科技大學 | Interleaved direct-current boost device |
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