CN103367126B - Ion injection method - Google Patents
Ion injection method Download PDFInfo
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- CN103367126B CN103367126B CN201210087748.0A CN201210087748A CN103367126B CN 103367126 B CN103367126 B CN 103367126B CN 201210087748 A CN201210087748 A CN 201210087748A CN 103367126 B CN103367126 B CN 103367126B
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Abstract
The present invention discloses a kind of ion injection method, comprise the step using ion beam to impact wafer, described wafer is driven by mechanical moving element and is scanned impact repeatedly by described ion beam comprehensively, described ion beam current is 4 ~ 6.5 milliamperes, and described wafer is determined according to the ion dose of required injection and ion beam current size by the number of times that scanning is impacted repeatedly comprehensively.Relative to traditional ion injection method, above-mentioned ion injection method ion beam current reduces, and can ensure that the resistance value of wafer is in the tolerance interval of normal value.In addition, under same implantation dosage, the corresponding increase of number of times that scanning is injected, single disturbs the dosage brought to reduce relatively little on the impact of whole dosage, thus the probability that wafer does not conform to specification diminishes.
Description
[technical field]
The present invention relates to semiconductor fabrication process, especially relate to a kind of ion injection method.
[background technology]
Ion implantation is a kind of impurity that introducing can be controlled the size in silicon substrate, to change the method for its electric property.Ion injection machine table emitting ions bundle impacts wafer to be implanted makes silicon chip adulterate certain density ion.
When ion implantation, the size of current of ion beam remains certain, repeatedly moves wafer and makes ion beam impact can cover whole wafer for several times.
Cause the electric current of ion beam to change if interference occurs ion injection machine table in injection process, the ion dose that this scanning will be caused to inject tails off.Under normal circumstances, when generation interference causes the electric current of ion beam to change, should ion implantation be stopped and the position of record injection, but process but such on some ion injection machine tables.The minimizing of such implantation dosage will cause the minimizing of whole implantation dosage, and when scanning the number of times injected and being little, the ratio that the ion dose of minimizing occupies will be very large.And if the problem that the number of times increasing scanning injection brings to reduce single sweep operation fault, and corresponding minimizing ion beam current ensures that implantation dosage is constant, then the resistance value of wafer usually can be caused to offset, fabrication parameter can be caused substandard.
[summary of the invention]
Based on this, be necessary to provide a kind of ion injection method that can improve wafer ion implantation qualification rate.
A kind of ion injection method, comprise the step using ion beam to impact wafer, described wafer is driven by mechanical moving element and is scanned impact repeatedly by described ion beam comprehensively, described ion beam current is 4 ~ 6.5 milliamperes, and described wafer is determined according to the ion dose of required injection and ion beam current size by the number of times that scanning is impacted repeatedly comprehensively.
Wherein in an embodiment, described wafer is polysilicon.
Wherein in an embodiment, described ion beam current is also determined by following condition: the error between the resistance value making polysilicon present after ion implantation and the resistance value of wafer after the ion beam current of use 6.5 milliamperes carries out ion implantation is no more than 1%.
Wherein in an embodiment, described wafer is 12 to 20 times by the number of times that scanning is impacted repeatedly comprehensively.
Wherein in an embodiment, be less than 1.5 standard state milliliter per minutes to vacuum chamber for ionic implantation injecting gas flow, board extraction electrode electric current is less than 25 milliamperes.
Above-mentioned ion injection method beam current scope can ensure that the resistance value of wafer is in the tolerance interval of normal value, improves wafer ion implantation qualification rate.
[accompanying drawing explanation]
Fig. 1 is the schematic diagram adopting ion beam to impact wafer.
[embodiment]
As shown in Figure 1, the schematic diagram for adopting ion beam to impact wafer.Ion beam 100 impacts wafer 200 and carries out ion implantation for wafer 200, wafer 200 is driven by mechanical moving element (not shown) and moves around at vertical direction simultaneously, wafer 200 can be scanned comprehensively, and after repeated multiple times, the dosage of ion implantation meets the requirement making the resistance value of wafer 200 reach required.
At the opposite side launched with ion beam 100, be provided with ion beam current measurement mechanism 300, for providing data for monitoring ion beam electronic current.In the process that wafer 200 moves up and down, the part that ion beam is blocked is many by few change, then tails off again, so repeatedly.Reflecting on ion beam current measurement mechanism 300 is exactly that the electric current detected from large to small, can become large, and repeatedly periodically change then.
The current requirements of ion beam 100 is stabilized in a numerical value, and such ion implantation dosage just can be determined by the number of times scanned.And in certain situation, can because external disturbance occurs in single pass process, if there is such interference, then ion implantation dosage being made current fluctuation in short-term to tail off, then affect whole ion implantation dosage.
In the polysilicon handle wafer of an embodiment, ion beam current being set to 6.5 milliamperes, the dosage needed for ion implantation, is 12 times by calculating or test the number of times obtaining particles wafer, and the resistance value of the polysilicon of gained doping is about 1150 ohm.
Be appreciated that, when ion beam current reduces, the number of times of required particles wafer can increase gradually.Namely, under the prerequisite that ion implantation dosage is certain, the size of ion beam current and scanning times are inverse correlations.
Further, ion beam current being set to 4 milliamperes, is 20 times by calculating or test the number of times of particles wafer, and the resistance value of the polysilicon of gained doping is about 1160 ohm.
Can see, above-mentioned ion beam current is 4 ~ 6.5 MAHs, and the resistance value of the polysilicon of gained doping is also more or less the same.
According to circumstances, can adjust the size of ion beam current, the error between the resistance value after making ion implantation, polysilicon being presented and the resistance value of wafer after the ion beam current of use 6.5 milliamperes carries out ion implantation is no more than 1%.
When ion beam current becomes more and more less, the resistance value of the polysilicon of gained doping has larger skew, makes the electrical quantity of device defective.Such as when ion beam current is set to 2 milliamperes, scanning times increase to 32 times to meet ion implantation dosage time, the resistance value of polysilicon of gained doping is about 1185 ohm.On the other hand, because scanning times increases, by extending the time of ion injecting process, affecting shipment speed, being therefore not suitable for ion beam current to reduce further.
In addition, in traditional ion injection method, in order to accelerate shipment speed, adopt larger ion beam current and less scanning to inject number of times, when once interference occurs, the dosage that single reduces is just larger on the impact of whole dosage.
When the not corresponding treatment mechanism immediately of ion injection machine table, the probability that the electrical quantitys such as the resistance value of wafer do not meet specification (OutOfSpecification, OOS) is larger.
For this reason, above-described embodiment is more than 12 times by making wafer by the number of times that comprehensively scanning is impacted repeatedly.Even if comprehensive scanning of certain single goes wrong like this, the dosage of loss also can not more than 1/12, namely 8.3%, and be acceptable as a rule.The size of required ion beam current can be tested or calculate to the ion dose injected as required and the scanning times of expection.
The ion beam current of the present embodiment is less than the ion beam current in conventional ion method for implanting, and scanning times then correspondingly increases.Such single disturbs the dosage brought to reduce relatively little on the impact of whole dosage, thus the probability that wafer does not conform to specification diminishes.
Ion beam is by obtaining corresponding ion and accelerating to obtain by gas ionization, the speed (gasflow) passing into gas coordinates the ion beam current of the present embodiment, should be set to be less than 1.5 standard state milliliters per minute (standard-statecubiccentimeterperminute, sccm).The extraction electrode electric current of board is less than 25mA simultaneously.This can reduce the probability that interference occurs board.
In abnormal cases in the instant ion injection machine table processed, such as vista ion injection machine table, just can realize the change of above-mentioned injection parameter only by optimization menu, and add instant processing module without upgrading of control software, cost is lower.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (3)
1. an ion injection method, be applied to vista sequence of ion board, comprise the step using ion beam to impact wafer, described wafer is driven by mechanical moving element, scanned impact repeatedly by described ion beam comprehensively, it is characterized in that, described ion beam current is 4 ~ 6.5 milliamperes, and described wafer is determined according to the ion dose of required injection and ion beam current size by the number of times that scanning is impacted repeatedly comprehensively; Described wafer is polysilicon; Be less than 1.5 standard state milliliter per minutes to vacuum chamber for ionic implantation injecting gas flow, board extraction electrode electric current is less than 25 milliamperes.
2. ion injection method as claimed in claim 1, it is characterized in that, described ion beam current is also determined by following condition: the error between the resistance value making polysilicon present after ion implantation and the resistance value of wafer after the ion beam current of use 6.5 milliamperes carries out ion implantation is no more than 1%.
3. ion injection method as claimed in claim 1, is characterized in that, described wafer is 12 to 20 times by the number of times that scanning is impacted repeatedly comprehensively.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210087748.0A CN103367126B (en) | 2012-03-28 | 2012-03-28 | Ion injection method |
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| CN201210087748.0A CN103367126B (en) | 2012-03-28 | 2012-03-28 | Ion injection method |
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| CN103367126A CN103367126A (en) | 2013-10-23 |
| CN103367126B true CN103367126B (en) | 2016-03-09 |
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| CN113539803A (en) * | 2021-06-28 | 2021-10-22 | 上海华虹宏力半导体制造有限公司 | Batch type ion implantation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1414606A (en) * | 2001-10-26 | 2003-04-30 | 日新电机株式会社 | Method and equipment of ion implantation |
| CN1499576A (en) * | 2002-11-04 | 2004-05-26 | 旺宏电子股份有限公司 | Method of disposing ion with high doping concentration for lowering defect on substrate |
| EP1580789A2 (en) * | 2004-02-23 | 2005-09-28 | Nissin Ion Equipment Co., Ltd. | Ion implantation method and apparatus |
| EP1810311A2 (en) * | 2004-11-08 | 2007-07-25 | Axcelis Technologies, Inc. | Improved dose uniformity during scanned ion implantation |
| CN101609794A (en) * | 2007-01-26 | 2009-12-23 | 硅源公司 | Temperature-controlled appliance and method during the thick-film material cleavage is handled |
| CN101838796A (en) * | 2009-12-18 | 2010-09-22 | 上海凯世通半导体有限公司 | Ion implantation device and method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7935942B2 (en) * | 2006-08-15 | 2011-05-03 | Varian Semiconductor Equipment Associates, Inc. | Technique for low-temperature ion implantation |
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2012
- 2012-03-28 CN CN201210087748.0A patent/CN103367126B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1414606A (en) * | 2001-10-26 | 2003-04-30 | 日新电机株式会社 | Method and equipment of ion implantation |
| CN1499576A (en) * | 2002-11-04 | 2004-05-26 | 旺宏电子股份有限公司 | Method of disposing ion with high doping concentration for lowering defect on substrate |
| EP1580789A2 (en) * | 2004-02-23 | 2005-09-28 | Nissin Ion Equipment Co., Ltd. | Ion implantation method and apparatus |
| EP1810311A2 (en) * | 2004-11-08 | 2007-07-25 | Axcelis Technologies, Inc. | Improved dose uniformity during scanned ion implantation |
| CN101609794A (en) * | 2007-01-26 | 2009-12-23 | 硅源公司 | Temperature-controlled appliance and method during the thick-film material cleavage is handled |
| CN101838796A (en) * | 2009-12-18 | 2010-09-22 | 上海凯世通半导体有限公司 | Ion implantation device and method |
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