CN103367107B - Improve the method for surface conjunction power - Google Patents
Improve the method for surface conjunction power Download PDFInfo
- Publication number
- CN103367107B CN103367107B CN201210101495.8A CN201210101495A CN103367107B CN 103367107 B CN103367107 B CN 103367107B CN 201210101495 A CN201210101495 A CN 201210101495A CN 103367107 B CN103367107 B CN 103367107B
- Authority
- CN
- China
- Prior art keywords
- propylene glycol
- semiconductor device
- mixed solution
- methyl ether
- ether acetate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Improve a method for surface conjunction power, comprising: semiconductor device is provided; The mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate is adopted to clean the surface of described semiconductor device; Low-temperature setting dielectric material is formed on the surface of described semiconductor device.The present invention, under the prerequisite not affecting performance of semiconductor device, can improve the adhesion of low-temperature setting dielectric material on semiconductor device surface, prevents low-temperature setting dielectric material from coming off.
Description
Technical field
The present invention relates to technical field of surface, particularly relate to a kind of method improving surface conjunction power.
Background technology
In semiconductor processing, need to form protective layer on the surface of semiconductor device to improve the performances such as its high temperature resistance is anticorrosive.As: in the manufacturing process of MEMS (Micro-electromechanicalSystems, microelectromechanical systems) device, can at Al
2o
3splendid PI (Polyimide, the polyimides) material of the surperficial spin coating combination property of ceramic material is as protective layer.
More technical schemes about protective layer can be the patent application of CN101629028A with reference to publication number.
But the curing temperature of PI material is very high, generally between 350 DEG C ~ 400 DEG C, therefore it is not suitable for the device of those poor heat resistance.Along with the development of semiconductor technology, increasing device needs to select the material of curing temperature lower (as: lower than 300 DEG C) as protective layer.For this reason, prior art proposes following two kinds of solutions.
First method adopts the PI material of semi-solid preparation temperature (as: 250 DEG C ~ 300 DEG C) as protective layer.Now; although reduce curing temperature; ensure that good adhesion between protective layer and semiconductor device, but now the mechanical performance of protective layer, chemical stability and thermal stability all receive very large impact, finally cause the poor-performings such as semiconductor device high temperature resistance radioresistance.
Second method adopts low-temperature setting dielectric material as protective layer, and the HD8930 as HDMicrosystems (Hitachi changes into) company produced is spin-coated on Al
2o
3ceramic material upper surface.The curing temperature of low-temperature setting dielectric material is general lower, various device can be applicable to, and the mechanical performance of low-temperature setting dielectric material, chemical stability and thermal stability are all more excellent, thus ensure that the better performances such as semiconductor device high temperature resistance radioresistance.
But now, low-temperature setting dielectric material and Al
2o
3the adhesion of ceramic material is very poor, and the situation of sag of protecting coating (peeling) often occurs, thus more seriously have impact on the performance of semiconductor device.
Therefore, how to improve and just become those skilled in the art's problem demanding prompt solution with the adhesion of low-temperature setting dielectric material.
Summary of the invention
The problem that the present invention solves is to provide a kind of method improving surface conjunction power, under the prerequisite not affecting performance of semiconductor device, can improve the adhesion of low-temperature setting dielectric material on semiconductor device surface, prevent low-temperature setting dielectric material from coming off.
For solving the problem, the invention provides a kind of method improving surface conjunction power, comprising:
Semiconductor device is provided;
The mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate is adopted to clean the surface of described semiconductor device;
Low-temperature setting dielectric material is formed on the surface of described semiconductor device.
Alternatively, the concentration range of described single ethylether propylene glycol comprises: 50% ~ 90%; The concentration range of described propylene glycol methyl ether acetate comprises: 10% ~ 50%.
Alternatively, the concentration of described single ethylether propylene glycol is 70%, and the concentration of described propylene glycol methyl ether acetate is 30%; Or the concentration of described single ethylether propylene glycol is 60%, the concentration of described propylene glycol methyl ether acetate is 40%.
Alternatively, the step that the mixed solution of described employing single ethylether propylene glycol and propylene glycol methyl ether acetate cleans the surface of described semiconductor device comprises: the surface mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate being sprayed at described semiconductor device.
Alternatively, the step that the mixed solution of described employing single ethylether propylene glycol and propylene glycol methyl ether acetate cleans the surface of described semiconductor device comprises: immersed on the surface of described semiconductor device in the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate.
Alternatively, the time of cleaning the surface of described semiconductor device is more than or equal to 15 seconds.
Alternatively, the temperature of cleaning the surface of described semiconductor device is more than or equal to 10 DEG C and is less than or equal to 50 DEG C.
Alternatively, the surfacing of described semiconductor device comprises: the one in dielectric ceramic material or metal material or combination in any.
Alternatively, described dielectric ceramic material comprises: Al
2o
3or Mg
2siO
4.
Alternatively, described metal material comprises: Al or Cu.
Alternatively, described low-temperature setting dielectric material comprises: the WPR-5100 that HD8930 or JSR (JapanSyntheticRubber, the Japan Synthetic Rubber) company that HDMicrosystems company produces produces.
Alternatively, described formation low-temperature setting dielectric material comprises: the surface described low-temperature setting dielectric material being spin-coated on semiconductor device.
Compared with prior art; the present invention has the following advantages: form the protective layer of low-temperature setting dielectric material on the surface of semiconductor device before; the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate is first adopted to clean the surface of described semiconductor device; thus improve the surface wettability of semiconductor device surface material; under the prerequisite not affecting performance of semiconductor device; finally improve the adhesion of semiconductor device surface and low-temperature setting dielectric material, can prevent low-temperature setting dielectric material from departing from from the surface of semiconductor device.
Accompanying drawing explanation
Fig. 1 is BLO and Al in prior art
2o
3contact angle schematic diagram between ceramic material;
Fig. 2 is BLO and Al in embodiment of the present invention
2o
3contact angle schematic diagram between ceramic material;
Fig. 3 is the schematic flow sheet of the method improving surface conjunction power in the embodiment of the present invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, therefore the present invention is not by the restriction of following public specific embodiment.
Just as described in the background section, very poor as the adhesion between the low-temperature setting dielectric material of protective layer and semiconductor device surface material in prior art, often there is the phenomenon that low-temperature setting dielectric material comes off.
Study discovery through inventor: in prior art, the surface wettability of semiconductor device surface material is very poor, namely the hydrophily of semiconductor device surface material is very poor.Shown in figure 1, the solvent BLO (gamma-butyrolacton) in prior art in HD8930 (i.e. low-temperature setting dielectric material) and Al
2o
3contact angle θ between ceramic material (i.e. semiconductor device surface material) is very large, thus causes HD8930 and Al
2o
3adhesion between ceramic material is very poor, and HD8930 can easily from Al
2o
3ceramic material splits away off.
For the problems referred to above, the invention provides a kind of method improving surface conjunction power, comprising: semiconductor device is provided; The mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate is adopted to clean the surface of described semiconductor device; Low-temperature setting dielectric material is formed on the surface of described semiconductor device.
Shown in figure 2; the present invention is before the surface of semiconductor device forms the protective layer of low-temperature setting dielectric material; first adopt the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate to clean the surface of described semiconductor device, thus substantially reduce BLO and Al
2o
3contact angle Φ between ceramic material, improves Al
2o
3the hydrophily of ceramic material.Final under the prerequisite not affecting performance of semiconductor device, improve the adhesion of semiconductor device surface material and low-temperature setting dielectric material, can prevent low-temperature setting dielectric material from departing from from the surface of semiconductor device.
Be described in detail below in conjunction with accompanying drawing.
Shown in figure 3, present embodiments provide a kind of method improving surface conjunction power, comprising:
Step S1, provides semiconductor device;
Step S2, adopts the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate to clean the surface of described semiconductor device;
Step S3, forms low-temperature setting dielectric material on the surface of described semiconductor device.
First perform step S1, semiconductor device is provided.
In the present embodiment, semiconductor device can be the MEMS of protective layer to be formed; as: the magnetometer being applied to electronic compass, GPS navigation, motor vehicle tantalum layer or direction discernment etc.; be applied to the accelerometer etc. of automobile, mobile phone, digital camera, MP3 player or electronic game machine etc.; these are only citing, it does not limit the scope of the invention.
The protective layer forming low-temperature setting dielectric material on the surface of semiconductor device is needed in the present embodiment.The surfacing of described semiconductor device can comprise: the one in dielectric ceramic material or metal material or combination in any.
Particularly, described dielectric ceramic material can comprise: Al
2o
3or Mg
2siO
4deng.
Particularly, described metal material can comprise: Al or Cu.
The surfacing of semiconductor device described in the present embodiment is Al
2o
3ceramic material.
Then perform step S2, adopt the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate to clean the surface of described semiconductor device.
By adopting the Al on the surface of the mixed solution cleaning MEMS of single ethylether propylene glycol and propylene glycol methyl ether acetate in the present embodiment
2o
3ceramic material, can improve Al
2o
3the surface wettability of ceramic material.
Shown in reference table 1, when using HD8930 as low-temperature setting dielectric material, the mixed solution cleaning Al of single ethylether propylene glycol and propylene glycol methyl ether acetate will be adopted
2o
3under time of ceramic material is fixed as the prerequisite of 20s, the concentration of single ethylether propylene glycol is made to get 100%, 90%, 80%, 70%, 60%, 50%, 40%, 30%, 20%, 10% and 0% respectively, the concentration of propylene glycol methyl ether acetate gets 0%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90% and 100%, measures the Al after the BLO and cleaning obtained
2o
3adhesion between ceramic material is respectively: 250kg/cm
2, 400kg/cm
2, 415kg/cm
2, 420kg/cm
2, 420kg/cm
2, 415kg/cm
2, 345kg/cm
2, 305kg/cm
2, 270kg/cm
2, 240kg/cm
2, 150kg/cm
2.And the Al before BLO and cleaning
2o
3adhesion between ceramic material is 135kg/cm
2.
Table 1
| Scavenging period | The concentration of single ethylether propylene glycol | The concentration of propylene glycol methyl ether acetate | Adhesion (kg/cm 2) |
| 20s | 100％ | 0％ | 250 |
| 20s | 90％ | 10％ | 400 |
| 20s | 80％ | 20％ | 415 |
| 20s | 70％ | 30％ | 420 |
| 20s | 60％ | 40％ | 420 |
| 20s | 50％ | 50％ | 415 |
| 20s | 40％ | 60％ | 345 |
| 20s | 30％ | 70％ | 305 |
| 20s | 20％ | 80％ | 270 |
| 20s | 10％ | 90％ | 240 |
| 20s | 0％ | 100％ | 150 |
Can be found by more above-mentioned data, as long as adopt the mixed solution cleaning Al of single ethylether propylene glycol and propylene glycol methyl ether acetate
2o
3ceramic material just can improve the adhesion of itself and BLO.
In order to ensure the Al after cleaning
2o
3ceramic material (as: is more than or equal to 400kg/cm with the adhesion of BLO is larger
2), described in the present embodiment, the concentration range of single ethylether propylene glycol can comprise: 50% ~ 90%, as: 50%, 60%, 70%, 80% or 90%.Correspondingly, the concentration range of described propylene glycol methyl ether acetate can comprise: 50% ~ 10%, as: 50%, 40%, 30%, 20% or 10%.Preferably, the concentration of described single ethylether propylene glycol is 70%, and the concentration of described propylene glycol methyl ether acetate is 30%; Or the concentration of described single ethylether propylene glycol is 60%, the concentration of described propylene glycol methyl ether acetate is 40%.Now Al
2o
3the surface wettability of ceramic material is best.
Shown in reference table 2, when the concentration of single ethylether propylene glycol being fixed as 70%, the concentration of propylene glycol methyl ether acetate is when being fixed as 30%, makes scavenging period get 0s, 10s, 15s, 20s, 30s, 40s, 50s, 60s or 120s respectively.Then measure the Al after the BLO and cleaning obtained
2o
3adhesion between ceramic material is respectively: 135kg/cm
2, 360kg/cm
2, 415kg/cm
2, 420kg/cm
2, 420kg/cm
2, 420kg/cm
2, 420kg/cm
2, 420kg/cm
2, 420kg/cm
2.And the Al before BLO and cleaning
2o
3adhesion between ceramic material is 135kg/cm
2.
Table 2
| Scavenging period | The concentration of single ethylether propylene glycol | The concentration of propylene glycol methyl ether acetate | Adhesion (kg/cm 2) |
| 0s | 70％ | 30％ | 135 |
| 10s | 70％ | 30％ | 360 |
| 15s | 70％ | 30％ | 415 |
| 20s | 70％ | 30％ | 420 |
| 30s | 70％ | 30％ | 420 |
| 40s | 70％ | 30％ | 420 |
| 50s | 70％ | 30％ | 420 |
| 60s | 70％ | 30％ | 420 |
| 120s | 70％ | 30％ | 420 |
In order to ensure the Al after cleaning
2o
3ceramic material (as: is more than or equal to 400kg/cm with the adhesion of BLO is larger
2), adopt the mixed solution cleaning Al of single ethylether propylene glycol and propylene glycol methyl ether acetate in the present embodiment
2o
3the time range of ceramic material can be more than or equal to 15s.Further, can find from table 2, after being more than or equal to 20s when purged, along with the increase of scavenging period, Al
2o
3the adhesion of ceramic material and BLO does not but change, thus when equaling 20s between illustrating when purged, just achieves Al
2o
3good combination between ceramic material and BLO, so scavenging period can be more than or equal to 15s and be less than or equal to 20s, to save time, reduces costs.
The temperature of cleaning the surface of described semiconductor device in the present embodiment can be more than or equal to 10 DEG C and be less than or equal to 50 DEG C, as: room temperature.
In an object lesson, the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate can be sprayed directly on the surface of described semiconductor device, to realize cleaning.
In another object lesson, the surface of described semiconductor device can be immersed in the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate, to realize cleaning.
It should be noted that, adopting after the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate cleans the surface of described semiconductor device, dry or distilled water cleaning without the need to carrying out, thus make the surface of the semiconductor device after cleaning still remain part mixed solution, and the most of solvent in mixed solution can volatilize, can there is the surface at semiconductor device in final solute.
Below be all carry out adhesion measurement using HD8930 as low-temperature setting dielectric material.Similarly, when adopting said method to carry out adhesion measurement using the WPR-5100 that JSR company produces as low-temperature setting dielectric material, finding that the adhesion of WPR-5100 and semiconductor device surface also improves a lot, the phenomenon that WPR-5100 comes off can not occur.
Finally perform step S3, form low-temperature setting dielectric material on the surface of described semiconductor device.
The dielectric material of low-temperature setting described in the present embodiment can comprise: the WPR-5100 that HD8930 or the JSR company that HDMicrosystems company produces produces.In other embodiments of the invention, described low-temperature setting dielectric material can also select other materials, and it is known for those skilled in the art, does not repeat them here.
Particularly, described low-temperature setting dielectric material can be spin-coated on the surface of semiconductor device.
So far, define the protective layer of low-temperature setting dielectric material on the surface of semiconductor device, and the surface of low-temperature setting dielectric material and semiconductor device has good adhesion, obscission can not occur.
The present embodiment is before the surface of semiconductor device forms the protective layer of low-temperature setting dielectric material; the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate is first adopted to clean the surface of described semiconductor device; thus improve the surface wettability of semiconductor device surface material; under the prerequisite not affecting performance of semiconductor device; finally improve the adhesion of semiconductor device surface material and low-temperature setting dielectric material, can prevent low-temperature setting dielectric material from departing from from the surface of semiconductor device.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (9)
1. improve a method for surface conjunction power, it is characterized in that, comprising:
Semiconductor device is provided;
Adopt the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate to clean the surface of described semiconductor device, the surfacing of described semiconductor device comprises dielectric ceramic material, and described dielectric ceramic material comprises Al
2o
3;
Low-temperature setting dielectric material is formed on the surface of described semiconductor device.
2. improve the method for surface conjunction power as claimed in claim 1, it is characterized in that, the mass concentration scope of described single ethylether propylene glycol in mixed solution comprises: 50% ~ 90%; The mass concentration scope of described propylene glycol methyl ether acetate in mixed solution comprises: 10% ~ 50%.
3. improve the method for surface conjunction power as claimed in claim 2, it is characterized in that, the mass concentration of described single ethylether propylene glycol in mixed solution is 70%, and the mass concentration of described propylene glycol methyl ether acetate in mixed solution is 30%; Or the mass concentration of described single ethylether propylene glycol in mixed solution is 60%, and the mass concentration of described propylene glycol methyl ether acetate in mixed solution is 40%.
4. improve the method for surface conjunction power as claimed in claim 1, it is characterized in that, the step that the mixed solution of described employing single ethylether propylene glycol and propylene glycol methyl ether acetate cleans the surface of described semiconductor device comprises: the surface mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate being sprayed at described semiconductor device.
5. improve the method for surface conjunction power as claimed in claim 1, it is characterized in that, the step that the mixed solution of described employing single ethylether propylene glycol and propylene glycol methyl ether acetate cleans the surface of described semiconductor device comprises: immersed on the surface of described semiconductor device in the mixed solution of single ethylether propylene glycol and propylene glycol methyl ether acetate.
6. improve the method for surface conjunction power as claimed in claim 1, it is characterized in that, the time of cleaning the surface of described semiconductor device is more than or equal to 15 seconds.
7. improve the method for surface conjunction power as claimed in claim 1, it is characterized in that, the temperature of cleaning the surface of described semiconductor device is more than or equal to 10 DEG C and is less than or equal to 50 DEG C.
8. improve the method for surface conjunction power as claimed in claim 1, it is characterized in that, described low-temperature setting dielectric material comprises: the WPR-5100 that HD8930 or the JSR company that HDMicrosystems company produces produces.
9. improve the method for surface conjunction power as claimed in claim 1, it is characterized in that, described formation low-temperature setting dielectric material comprises: the surface described low-temperature setting dielectric material being spin-coated on semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210101495.8A CN103367107B (en) | 2012-04-09 | 2012-04-09 | Improve the method for surface conjunction power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210101495.8A CN103367107B (en) | 2012-04-09 | 2012-04-09 | Improve the method for surface conjunction power |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103367107A CN103367107A (en) | 2013-10-23 |
| CN103367107B true CN103367107B (en) | 2016-04-20 |
Family
ID=49368214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210101495.8A Active CN103367107B (en) | 2012-04-09 | 2012-04-09 | Improve the method for surface conjunction power |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103367107B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107073894A (en) * | 2014-07-23 | 2017-08-18 | G·吉姆 | Protective Composite Surface |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126488A (en) * | 1993-05-17 | 1996-07-10 | 株式会社东芝 | Cleaning agent, cleaning method and cleaning apparatus |
| CN1550036A (en) * | 2001-02-21 | 2004-11-24 | �Ҵ���˾ | Method for fabricating low-k interlayer dielectric film with enhanced adhesion and low defect density for backend line interconnect structure |
| CN101079378A (en) * | 2006-05-22 | 2007-11-28 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of crystal column surface |
| CN101281379A (en) * | 2007-04-03 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist as well as method for reworking of photoetching technology |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5041647B2 (en) * | 2002-05-30 | 2012-10-03 | 石原薬品株式会社 | Cleaning composition |
-
2012
- 2012-04-09 CN CN201210101495.8A patent/CN103367107B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126488A (en) * | 1993-05-17 | 1996-07-10 | 株式会社东芝 | Cleaning agent, cleaning method and cleaning apparatus |
| CN1550036A (en) * | 2001-02-21 | 2004-11-24 | �Ҵ���˾ | Method for fabricating low-k interlayer dielectric film with enhanced adhesion and low defect density for backend line interconnect structure |
| CN101079378A (en) * | 2006-05-22 | 2007-11-28 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of crystal column surface |
| CN101281379A (en) * | 2007-04-03 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist as well as method for reworking of photoetching technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103367107A (en) | 2013-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105835498B (en) | A kind of polyimide composite film of one side anti-atomic oxygen and preparation method thereof | |
| KR20140125844A (en) | Curable and patternable inks and method of printing | |
| CN108976875B (en) | Conductive polymer dispersion, conductive substrate, and method for producing same | |
| CN103367107B (en) | Improve the method for surface conjunction power | |
| WO2012048823A1 (en) | Dispersions comprising polythiophenes with a defined content of thiophene monomer | |
| JP2020535697A5 (en) | ||
| US20160351813A1 (en) | Manufacturing method of thin film transistor and thin film transistor , array substrate | |
| CN103304814A (en) | Intrinsic hydrophobic polyimide aerogel and preparation method as well as application thereof | |
| CN103666250A (en) | Organic silicon coating rubber and preparation method thereof | |
| US9893286B2 (en) | Organic single crystal field effect circuit and preparing method thereof | |
| CN104178081B (en) | A kind of patch red glue | |
| Tousignant et al. | High performance organic electronic devices based on a green hybrid dielectric | |
| CN103788653A (en) | Underlayer film composition for image formation | |
| RU2011105637A (en) | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE | |
| CN103122214A (en) | A kind of preparation method of high temperature resistant, corrosion resistant fluorine-containing organic silicon/SiO2 nano-hybrid coating | |
| Cao et al. | Incorporating cyano groups to a conjugated polymer based on double B← N-bridged bipyridine units for unipolar n-type organic field-effect transistors | |
| JP6245272B2 (en) | Wiring pattern manufacturing method and transistor manufacturing method | |
| CN105140261A (en) | Organic thin-film transistor and fabrication method thereof, array substrate and display device | |
| JP2004087637A (en) | Semiconductor device and semiconductor package | |
| CN111234304B (en) | A kind of polyaniline@silver nanowire/polyimide porous gradient composite film, preparation method and application | |
| KR102118372B1 (en) | Prepartion method of Silica layer | |
| TWI527821B (en) | Silver compound, silver ink and method for inkjet printing on flexible substrate using the same | |
| JP2022099428A (en) | Method for removing upper part of sacrificial layer, and sacrificial solution, and acidic aqueous solution used therefor | |
| CN103332871B (en) | Hydrophobic vehicle glass that a kind of low water droplet is residual and preparation method thereof | |
| CN116041761A (en) | Polyimide film capable of multiplexing high frequency, low dielectric and low loss, and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |