CN103361610A - Evaporating source and vacuum evaporation device employing the same - Google Patents
Evaporating source and vacuum evaporation device employing the same Download PDFInfo
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- CN103361610A CN103361610A CN2013100535083A CN201310053508A CN103361610A CN 103361610 A CN103361610 A CN 103361610A CN 2013100535083 A CN2013100535083 A CN 2013100535083A CN 201310053508 A CN201310053508 A CN 201310053508A CN 103361610 A CN103361610 A CN 103361610A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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Abstract
Description
技术领域technical field
本发明涉及在真空下将蒸镀材料加热,使其产生蒸镀粒子,在基板上形成蒸镀材料的膜的真空蒸镀装置。The present invention relates to a vacuum vapor deposition device for heating a vapor deposition material under vacuum to generate vapor deposition particles to form a film of the vapor deposition material on a substrate.
背景技术Background technique
简单地说明一般的有机电致发光元件(下称有机EL元件)。A general organic electroluminescence element (hereinafter referred to as an organic EL element) will be briefly described.
有机EL元件在基板上按照阳极、空穴输送层、发光层、电子输送层、电子注入层、阴极的顺序形成膜,通过使电流在阳极和阴极之间流动而发光。An organic EL element forms an anode, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode in this order on a substrate, and emits light by flowing an electric current between the anode and the cathode.
尤其针对从空穴输送层到电子注入层而言,通过真空蒸镀或者印刷或者涂抹形成有机化合物或者无机化合物,在阳极上形成叠层构造体。再有,通过真空蒸镀或者溅射在叠层构造体上形成镁、银、铝等的金属膜,设置阴极。这样,形成有机EL元件。In particular, from the hole transport layer to the electron injection layer, an organic compound or an inorganic compound is formed by vacuum deposition or printing or coating, and a laminated structure is formed on the anode. Furthermore, a metal film of magnesium, silver, aluminum, or the like is formed on the laminated structure by vacuum deposition or sputtering, and a cathode is provided. In this way, an organic EL element is formed.
使用图2,说明一般的真空蒸镀方法的例子。An example of a general vacuum deposition method will be described using FIG. 2 .
在图2中,真空蒸镀装置1具备真空腔2、真空泵3以及蒸发源4。真空腔2成为密闭容器,在其内部配置蒸发源4和作为蒸镀对象的基板5。另外,真空腔2的内部由于在相对于基板5成膜时需要保持10-3~10-6Pa的真空度,所以,由真空泵3进行真空排气。在蒸发源4将蒸镀材料加热使之汽化,并相对于基板5喷涂,进行成膜。此时,相对于基板5的大形化,使基板5旋转或使基板5或者蒸发源4的任意一个移动来进行成膜。In FIG. 2 , a
简单地说明一般的蒸发源构造的例子,将蒸镀材料封入到内部的坩埚由加热器加热。据此,蒸镀材料汽化,蒸镀材料的气体从设置在坩埚的盖上的开口朝向基板向上方排放。An example of a general evaporation source structure will be briefly described. A crucible in which an evaporation material is sealed is heated by a heater. Accordingly, the vapor deposition material is vaporized, and the gas of the vapor deposition material is discharged upward toward the substrate from the opening provided in the lid of the crucible.
上述的坩埚由坩埚主体以及上盖和中盖构成。坩埚主体由构造体支撑,由作为加热构件的加热器辐射加热,蒸镀材料蒸发。The above-mentioned crucible is composed of a crucible main body, an upper cover and a middle cover. The main body of the crucible is supported by a structure, and is radiated and heated by a heater as a heating member to evaporate the evaporation material.
据此,在配置在坩埚的上方的基板上形成膜。为了控制加热器的输出,通过热电偶测定坩埚的底部温度。再有,构成为在加热器的外周部设置反射器,使来自加热器的辐射热集中在坩埚内。Accordingly, a film is formed on the substrate disposed above the crucible. To control the output of the heater, the bottom temperature of the crucible was measured by a thermocouple. Furthermore, a reflector is provided on the outer peripheral portion of the heater to concentrate the radiant heat from the heater in the crucible.
在先技术文献prior art literature
专利文献patent documents
专利文献1:日本特开2008-24998号公报Patent Document 1: Japanese Patent Laid-Open No. 2008-24998
在上述以往技术中,从坩埚的喷嘴排放的蒸镀材料的蒸气的大多数朝向基板的方向移动。但是,其中产生朝向蒸发源的内部进入的蒸气的粒子或从坩埚主体和上盖的间隙泄漏出来的蒸气的粒子。In the conventional art described above, most of the vapor of the vapor deposition material discharged from the nozzle of the crucible moves toward the substrate. However, particles of vapor entering toward the inside of the evaporation source or particles of vapor leaking from the gap between the crucible main body and the upper cover are generated therein.
进入到蒸发源的内部的蒸镀材料的蒸气的粒子相对于反射器的与外部连接的部件,例如构造部件、加热器的端子以及热电偶等,向蒸发源内部的低温的部件集中,冷凝并析出。Particles of the vapor deposition material vapor entering the inside of the evaporation source concentrate on the low-temperature parts inside the evaporation source relative to the components connected to the outside of the reflector, such as structural components, heater terminals, and thermocouples, condense and Precipitate.
若有机化合物的蒸镀材料析出,则在有机蒸镀中因长时间受到加热器的热而分解,产生对膜质造成影响的杂质。另外,在为无机化合物的蒸镀材料的情况下,还存在附着了蒸镀材料的部件粘连,在维护时不能将各部件分解的情况。尤其是若将金属材料作为蒸镀材料,则还存在在加热器的端子之间等产生短路的可能性。这些问题点在以往技术的蒸发源中未被解决。When the vapor deposition material of the organic compound is deposited, it is decomposed by being heated by the heater for a long time during the organic vapor deposition, and impurities that affect the film quality are generated. In addition, in the case of a vapor deposition material of an inorganic compound, parts to which the vapor deposition material adhered may stick together, and each part may not be disassembled at the time of maintenance. In particular, if a metal material is used as the vapor deposition material, there is a possibility that a short circuit may occur between terminals of the heater or the like. These problems have not been solved in conventional evaporation sources.
对此,专利文献1所示的蒸发源没有公开有关上述所示的蒸镀材料在蒸发源内部析出的问题的解决对策。In contrast, the evaporation source disclosed in
发明内容Contents of the invention
本发明的目的是提供一种即使蒸镀材料进入蒸发源内部,也防止膜质的劣化,不会对连续运转、维护产生障碍的蒸发源以及真空蒸镀装置。It is an object of the present invention to provide an evaporation source and a vacuum evaporation device that prevent deterioration of film quality even if an evaporation material enters the evaporation source, and does not hinder continuous operation and maintenance.
为了实现上述目的,本发明是一种蒸发源,所述蒸发源由具有喷嘴的坩埚、用于加热该坩埚的加热构件、配置在上述坩埚和上述加热构件的周边的隔热构件(第一隔热构件)构成,上述喷嘴用于排放将被封入的蒸镀材料加热而蒸发出的蒸镀材料,其中,在上述隔热构件和坩埚或者加热构件之间,设置由该加热构件保持为低温的浮游蒸镀物回收构件,且在该浮游蒸镀物回收构件和上述坩埚以及上述加热构件之间设置隔热构件(第二隔热构件)。In order to achieve the above object, the present invention is an evaporation source, which consists of a crucible with a nozzle, a heating member for heating the crucible, and a heat insulating member (the first insulation member) arranged around the crucible and the heating member. thermal member), and the above-mentioned nozzle is used to discharge the vapor deposition material that is evaporated by heating the enclosed vapor deposition material, wherein, between the above-mentioned heat insulating member and the crucible or the heating member, a A floating vapor deposition recovery member is provided, and a heat insulating member (second heat insulating member) is provided between the floating vapor deposition recovery member, the crucible, and the heating member.
也可以是,上述加热构件与上述坩埚一体设置或者设置在坩埚的内部。The heating member may be provided integrally with the crucible or provided inside the crucible.
也可以是,上述加热构件为使用电阻加热而发热的加热构件。The heating means may be a heating means that generates heat using resistance heating.
也可以是,上述加热构件被配置在上述坩埚外,并且,使用电阻加热、感应加热、红外线加热的任意一种加热构件。The heating means may be arranged outside the crucible, and any one of resistance heating, induction heating, and infrared heating may be used.
也可以是,上述第一隔热构件是至少覆盖上述浮游蒸镀物回收构件的相对于上述坩埚以及加热构件的相向面的形状。The said 1st heat insulation member may be a shape which covers at least the surface of the said floating vapor deposition recovery member which opposes the said crucible and a heating member.
另外,为了实现上述目的,本发明也可以优选上述第一隔热构件是单个或者叠层多个板的构造。Moreover, in order to achieve the said objective, in this invention, it is preferable that the said 1st heat insulation member is single or the structure which laminated|stacked a plurality of boards.
另外,为了实现上述目的,本发明也可以优选上述第一隔热构件使用由碳、金属、陶瓷的任意一个或者多个形成的板。In addition, in order to achieve the above object, in the present invention, it is also preferable to use a plate made of any one or more of carbon, metal, and ceramics as the first heat insulating member.
另外,为了实现上述目的,本发明也可以优选上述第二隔热构件是单个或者叠层了多个板的构造。Moreover, in order to achieve the said objective, in this invention, it is preferable that the said 2nd heat insulating member is single or the structure which laminated|stacked the several plates.
另外,为了实现上述目的,本发明也可以优选上述第二隔热构件使用由碳、金属、陶瓷的任意一个或者多个形成的板。In addition, in order to achieve the above object, in the present invention, it is also preferable that the second heat insulating member is a plate made of any one or more of carbon, metal, and ceramics.
另外,为了实现上述目的,本发明也可以优选在上述浮游蒸镀物回收构件的四周设置可拆装的罩,该罩至少与冷却构件局部地接触而被冷却。In addition, in order to achieve the above object, in the present invention, it is preferable to provide a detachable cover around the above-mentioned floating vapor deposition recovery member, and the cover is cooled by at least partial contact with the cooling member.
另外,为了实现上述目的,本发明也可以优选将上述浮游蒸镀物回收构件设置在上述坩埚的具有喷嘴的面以外。In addition, in order to achieve the above-mentioned object, in the present invention, it is also preferable to install the above-mentioned floating vapor deposition recovery member on a surface other than the surface of the above-mentioned crucible having the nozzle.
另外,为了实现上述目的,本发明也可以优选上述浮游蒸镀物回收装置由循环的冷却媒质冷却。In addition, in order to achieve the above object, in the present invention, it is also preferable that the floating vapor deposition recovery device is cooled by a circulating cooling medium.
另外,为了实现上述目的,本发明也可以优选上述冷却媒质在壳体的壁本身循环,且上述壳体和上述浮游蒸镀物回收构件热接触。In addition, in order to achieve the above object, in the present invention, it is preferable that the cooling medium circulates through the wall itself of the casing, and the casing and the floating vapor deposition recovery member are in thermal contact.
另外,用于实现上述目的的本发明的结构是使用了上述蒸发源的任意一个的真空蒸镀装置。Moreover, the structure of this invention for achieving the said object is the vacuum evaporation apparatus which used any one of the said evaporation sources.
根据本发明,能够提供一种即使蒸镀材料进入到蒸发源内部,也防止膜质的劣化,不会对连续运转、维护产生障碍的真空蒸镀装置以及蒸发源。According to the present invention, it is possible to provide a vacuum evaporation device and an evaporation source that prevent deterioration of film quality even if an evaporation material enters the inside of the evaporation source, and do not hinder continuous operation and maintenance.
附图说明Description of drawings
图1是有关本发明的实施例的真空蒸镀装置的基本结构的示意图。FIG. 1 is a schematic diagram of a basic structure of a vacuum evaporation apparatus according to an embodiment of the present invention.
图2是基于一般的真空蒸镀的成膜装置的示意结构图。FIG. 2 is a schematic configuration diagram of a general vacuum evaporation-based film formation device.
图3是有关本发明的实施例的真空蒸镀装置的示意结构图。Fig. 3 is a schematic configuration diagram of a vacuum evaporation device according to an embodiment of the present invention.
图4是有关本发明的实施例的有机EL器件制造装置的示意结构图。Fig. 4 is a schematic configuration diagram of an organic EL device manufacturing apparatus according to an embodiment of the present invention.
图5是表示有关本发明的其它实施例的蒸发源的冷却构件的图。Fig. 5 is a diagram showing a cooling member of an evaporation source according to another embodiment of the present invention.
图6是表示有关本发明的其它实施例的蒸发源的冷却构件的图。Fig. 6 is a diagram showing a cooling member of an evaporation source according to another embodiment of the present invention.
符号说明Symbol Description
1:真空蒸镀装置;2:腔;3:真空泵;4:蒸发源;5:基板;6:门阀;7:真空运送室;8:基板储料器室;9:真空运送机器人;10:基板;11:蒸发源;12:掩膜;13:基板保持部;14:门阀件;16:真空蒸镀腔;21:蒸发材料;22:坩埚;25:热电偶;24:反射器;26:速率传感器;27:壳体;28:冷却块体;34:喷嘴;43:隔热构件;44:加热构件(加热器23);45:冷却构件(浮游蒸镀物回收构件);46:热辐射隔热构件;50:端子;51:水冷配管;52:冷却液;52a:冷却液流通孔;52b:U形转弯部;100:有机EL器件制造装置。1: Vacuum evaporation device; 2: Chamber; 3: Vacuum pump; 4: Evaporation source; 5: Substrate; 6: Gate valve; 7: Vacuum transfer chamber; 8: Substrate stocker chamber; 9: Vacuum transfer robot; 10: Substrate; 11: evaporation source; 12: mask; 13: substrate holding part; 14: gate valve; 16: vacuum evaporation chamber; 21: evaporation material; 22: crucible; 25: thermocouple; 24: reflector; 26 : rate sensor; 27: casing; 28: cooling block; 34: nozzle; 43: heat insulation member; 44: heating member (heater 23); 45: cooling member (floating vapor deposition recovery member); 46: 50: terminal; 51: water cooling pipe; 52: cooling liquid; 52a: cooling liquid flow hole; 52b: U-shaped turning part; 100: organic EL device manufacturing device.
具体实施方式Detailed ways
下面,基于图说明本发明的一实施例。Next, an embodiment of the present invention will be described based on the drawings.
实施例1Example 1
根据附图,说明用于实施本发明的最佳方式。The best mode for carrying out the present invention will be described with reference to the drawings.
图1是有关本发明的实施例的真空蒸镀装置的基本结构的示意图。使用图1,说明有关本发明的实施例的真空蒸镀装置的概要。FIG. 1 is a schematic diagram of a basic structure of a vacuum evaporation apparatus according to an embodiment of the present invention. Using FIG. 1, the outline|summary of the vacuum evaporation apparatus concerning the Example of this invention is demonstrated.
图1中,真空蒸镀装置1具有作为真空容器的腔2,在其中配置有排放蒸镀材料21的蒸气的蒸发源4和作为被蒸镀物的基板5。为了在蒸镀时使腔2内部达到比10-3Pa高的真空度,总是由与腔2连接的真空泵3进行真空排气。这里,基板5不仅是构成真空蒸镀装置1的部件,也是由真空蒸镀装置1成膜的部件。In FIG. 1 , a
在开始减压后,由蒸发源4的加热构件44加热坩埚22。通过该加热,蒸镀材料21蒸发或者升华,产生蒸镀材料21的蒸气,在基板5上成膜。这里使用的基板5使用玻璃、陶瓷、金属、有机物的任意一种的平板。例如,在形成有机EL元件时,预先在基板5的蒸镀面上形成阳极。After starting the decompression, the
有机EL元件的各层使用下述那样的材料。阳极优选例如ITO、金、碘化铜、氧化锡等空穴注入能力高、功函数大的金属、合金的导电性化合物。The following materials are used for each layer of the organic EL element. The anode is preferably a conductive compound of a metal or an alloy having a high hole injection capability and a large work function, such as ITO, gold, copper iodide, and tin oxide.
作为空穴注入层,例如使用CuPc、m-MTDATA。作为空穴输送层,使用例如α-NPD、TPD、PDA。作为发光层,例如基质材料使用红荧烯、CBP、CDBP、Alq3,掺杂剂材料使用香豆素6、Ir(ppy)3、FIrpic等。作为电子输送层,例如使用Alq3、PBD、TAZ、BND、OXD等。作为电子注入层例如使用LiF、BCP、锶等。作为阴极,使用Mg-Ag共蒸镀膜、Al等。As the hole injection layer, for example, CuPc and m-MTDATA are used. As the hole transport layer, for example, α-NPD, TPD, and PDA are used. As the light-emitting layer, for example, rubrene, CBP, CDBP, and Alq3 are used as host materials, and
蒸镀是使用由坩埚22、加热构件44、隔热构件43构成的蒸发源4进行蒸镀。由加热构件44将封入了蒸镀材料21的坩埚22加热,产生蒸镀材料21的蒸气。而且,通过由设置在坩埚22上的喷嘴34朝向基板5排放来进行成膜。这些坩埚22、加热构件44、隔热构件43等被收纳在壳体27中。另外,加热构件44因为只要能够将坩埚内部的蒸镀材料加热即可,所以,在坩埚的内部也没有问题。在下面的实施例2~3中也是同样,加热构件44的位置无论坩埚的内外均可设置。Vapor deposition was carried out using evaporation source 4 including
蒸发源4的控制是在蒸发源4内部设置热电偶,调整向加热构件44的接入电力,以使坩埚22、其环境温度达到规定的温度。或者,也可以在被设置在蒸发源4和基板之间的空间设置速率传感器26,调整加热构件44的接入电力,以使向该速率传感器26的每单位时间的蒸镀速率达到规定的值。25是热电偶。50是端子。The control of the evaporation source 4 is to install a thermocouple inside the evaporation source 4 and adjust the electric power supplied to the
对应于基板5大形化的情况,使基板5旋转,在使蒸发源4从旋转轴错开的状态进行固定,或者使基板5或者蒸发源4的任意一个向与蒸气喷出方向垂直的方向移动。尤其是在为后者的情况下,只要使喷嘴34在基板的宽度方向排列,使基板5或者蒸发源4向与排列方向呈直角的方向移动即可。When the
为了连续地对不同的基板5进行蒸镀,只要在腔2设置门阀6,使处理结束的基板5维持着真空的状态不变地向其它的腔2移动,同样保持真空度不变地将未处理的基板5运入即可。In order to continuously vapor-deposit
这样地谋求蒸镀装置以及蒸发源的运用。本发明的蒸发源4也能够像上述那样同样运用。In this way, the operation of the evaporation device and the evaporation source is sought. The evaporation source 4 of the present invention can also be used in the same manner as described above.
下面,使用图1,说明本发明的蒸发源。Next, the evaporation source of the present invention will be described using FIG. 1 .
另外,虽然本实施例中所示的图都是表示了使基板5的成膜面朝下进行处理的方式的例子,但是,本发明能够不取决于成膜面的朝向地应用。In addition, although the figures shown in this embodiment all show an example in which the
在图1中,蒸发源4由封入有蒸镀材料21,并且具有用于将蒸镀材料21排放的喷嘴34的坩埚22、处于坩埚22的外部,用于将坩埚22加热的加热构件44、配置在坩埚22以及加热构件44的周边的隔热构件(第一隔热构件)43构成。再有,在隔热构件43和坩埚22或者加热构件44之间设置冷却构件45(浮游蒸镀物回收构件)。In Fig. 1, evaporation source 4 is sealed with
能够由该冷却构件45,将入射到蒸发源4内的材料蒸气的粒子捕集,使之有选择地析出。据此,将向四周的部件的析出降低到最小限度。该冷却构件45的温度与蒸镀材料蒸发的温度相比是非常低的温度,例如,若是升华的蒸镀材料,则优选保持在升华点以下的温度,若是蒸发的材料,则优选保持在熔点以下的温度。The cooling
另一方面,在将冷却构件45设置在上述的位置的情况下,由于明显地吸收坩埚22或者加热构件44的辐射热,所以,坩埚内的蒸镀材料的温度降低,蒸镀本身产生障碍。为了防止这种情况,设置热辐射隔热构件(第二隔热构件)46,使坩埚22以及加热构件44不能直面冷却构件45。On the other hand, when the cooling
该热辐射隔热构件46紧贴或不紧贴冷却构件45均可。只要面对加热构件44或者坩埚22的最表面的温度与冷却构件45的温度相比非常高,不会对坩埚22内的蒸镀材料21的蒸发造成影响即可。另外,也可以是冷却构件45的一部分露出于由隔热构件43包围的区域中的构造。The heat
图3(A)是表示作为电阻加热式的加热构件44(加热器23)使用的例子。FIG. 3(A) shows an example of use as a resistance heating type heating member 44 (heater 23 ).
在图3(A)中,若加热器23的发热体在700℃以下,则与周围绝缘的对策简便,所以,还是使用护套加热器因容易管理而被优选。在超过700℃的情况下,尤其是在1000℃以上时,也可以将Mo、Ta、W等金属或其合金的金属线卷绕在陶瓷框架上构成加热器。作为陶瓷框架的材质优选氧化铝、SiC、氮化硼、氮化铝等在高的温度下绝缘性优异的材质。加热器23被构成为面圈状,在上下或左右等2分割或者2以上分割均可。若坩埚22以及蒸镀材料21能够均匀地加热,则怎样构成加热器23均可。作为加热构件44,除电阻加热外,也可以使用感应加热、红外线加热。In FIG. 3(A), if the heating element of the heater 23 is 700° C. or lower, measures for insulation from the surroundings are simple, so it is preferable to use a sheath heater because it is easy to manage. In the case of exceeding 700°C, especially above 1000°C, a heater may be formed by winding metal wires of metals such as Mo, Ta, W, or alloys thereof on a ceramic frame. As a material of the ceramic frame, a material excellent in insulating properties at a high temperature, such as alumina, SiC, boron nitride, and aluminum nitride, is preferable. The heater 23 is configured in a donut shape, and may be divided into two or more, such as vertically or horizontally. As long as
在由加热器23包围的区域中收纳有坩埚22。在图3中,坩埚22和加热器23非接触,但是,若不因坩埚22和加热器23直接或者间接接触而产生短路、接地,则也可以使之接触。A
作为坩埚22的材质,作为金属材料优选Mo、Ta、W等金属或者含有它们的合金。作为陶瓷材料,优选氧化铝、SiC、氮化硼、氮化铝等,除此之外,也可以使用碳石墨等材质。As the material of the
在图3中,替代图1、图2所示的隔热构件43,表示了使多张反射板48分别分离的所谓的反射器24。该反射板48在为700℃以下时,可以使用不锈钢材、钛材。在为700℃以上的温度带时,能够使用Au、Cu、Mo、Ta、W等金属材料及其合金、碳、氧化铝、SiC、BN、AlN等陶瓷材。只要确保将传播热辐射的红外线等电磁波反射的功能即可。因此,为了提高红外线频带的反射率,优选对反射板48的表面进行镜面加工,再有,也可以镀层Ag、Au、Cu、Al等金属。In FIG. 3 , instead of the
也可以替代反射器24,铺设至少一张以上用热传导小且耐热温度高的陶瓷板或者陶瓷的纤维做成的片材。在使用陶瓷板的情况下,考虑到真空排气,可以使用气孔率小的陶瓷板。另外,也可以共用图3所示的反射器24和隔热材等。Instead of the
图3(B)是表示加热器23的形状的图。FIG. 3(B) is a diagram showing the shape of the heater 23 .
在图3(B)中,(1)所示的加热器23a是一体形成的加热器,(2)所示的加热器23b是两分割的加热器。这些加热器的应用是与壳体27的大小、基板5的大小相匹配地选择的。In FIG. 3(B), the heater 23 a shown in (1) is an integrally formed heater, and the heater 23 b shown in (2) is a divided heater. The application of these heaters is selected to match the size of the
这里,使用图4,简单说明有机EL器件制造的生产线结构。Here, using FIG. 4, the structure of the production line for manufacturing an organic EL device will be briefly described.
图4是有关本发明的实施例的有机EL器件制造装置的示意结构图。Fig. 4 is a schematic configuration diagram of an organic EL device manufacturing apparatus according to an embodiment of the present invention.
在图4中,本发明的有机EL器件制造装置100被构成为由同一真空蒸镀腔16进行校准和蒸镀。有机EL器件制造装置100做成如下的集群型的有机EL器件制造装置100的结构:在中心部配置具有真空运送机器人9的多边形的真空运送室7,以及在其周边部放射状地配置基板储料器室8、作为成膜室的真空蒸镀腔16。各真空蒸镀腔16具有保持基板10的基板保持部13和掩膜12。另外,在真空蒸镀腔16以及基板储料器室8和真空运送室7之间设置有将相互的真空隔离的门阀件14。蒸发源11使用图1或者图3所示的蒸发源4。In FIG. 4 , the organic EL
通过这样的结构,真空运送机器人9从基板储料器室8取出基板10,运入真空蒸镀腔16的基板保持部13。而且,在真空蒸镀腔16,由基板回旋构件(未图示出)使被运入的基板10正对掩膜12,进行校准(进行基板和掩膜的对位),使蒸发源11上下运动,对基板10进行蒸镀。在蒸镀后,使基板10返回水平状态。此后,由真空运送机器人9将基板10从真空蒸镀腔16运出,运入其它的真空蒸镀腔16或者返回基板储料器室8。With such a structure, the vacuum transfer robot 9 takes out the
在进行这样的处理中的基板10的运出运入时,控制相关的门阀件14,以便不会对各真空蒸镀腔16的处理造成影响。When the
如上所述,在本实施例中,将冷却构件45设置在坩埚22以及加热构件44(加热器23)的外部,并且设置在由隔热构件44(反射器24)包围的区域的内侧。据此,因为能够使浮游的泄漏蒸气集中地附着在冷却构件45,所以,能够防止向额外的部位进行上述附着。As described above, in the present embodiment, the cooling
另外,由于来自加热器23的针对冷却构件45的热由辐射热隔热构件46(反射器24)隔断,所以,不存在冷却构件45被加热的情况。因此,能够进行稳定的泄漏蒸气的捕集。In addition, since the heat from the heater 23 to the cooling
[实施例2][Example 2]
图5表示冷却构件的细节。Figure 5 shows details of the cooling components.
图5是表示有关本发明的其它实施例的蒸发源的冷却构件的图。Fig. 5 is a diagram showing a cooling member of an evaporation source according to another embodiment of the present invention.
图5中,在本实施例中,是作为冷却构件45例如做成不锈钢制的块体28,从反射器24的外部使冷却液52(作为冷却媒质使用油或者水等)循环的构造。In FIG. 5 , in this embodiment, the cooling
也就是说,设置将腔2和壳体27贯通的两条冷却液流通孔52a,进而设置U形转弯部52b,以便两条冷却液流通孔52a由冷却块体28合流。冷却液流通孔52a分别由配管51连接成为连续的流通孔。That is to say, two coolant flow holes 52 a connecting the
另外,在本实施例中,虽然由腔2、壳体27、将冷却块体28贯通的冷却液流通孔52a构成,但是,当然并不限于该结构,即使由U字状的配管构成,也能够得到同样的效果。In this embodiment, although the
如上所述,根据本实施例,通过使冷却液52在冷却块体28中循环,由于冷却块体28能够总是保持为低温状态,所以,能够提高泄漏蒸气的捕集效果。As described above, according to the present embodiment, since the
[实施例3][Example 3]
图6是表示有关本发明的其它实施例的蒸发源的冷却构件的图。Fig. 6 is a diagram showing a cooling member of an evaporation source according to another embodiment of the present invention.
图6中,在实施例2中,做成使冷却媒质在冷却块体28中循环的结构,但在本实施例,是在反射器24上开设孔,与外部的壳体27连接或一体化的结构。另外,在做成与壳体27连接或一体构造的情况下,也可以仅对壳体侧进行水冷。In Fig. 6, in
也就是说,若保持原样地使用冷却块体28,则会吸收坩埚22或者加热构件44(加热器23)的热辐射,使蒸发源内的温度明显降低,蒸镀产生障碍。因此,如图5或者图6所示,在冷却块体28内,在与加热构件44或者坩埚22对置的面上设置辐射热隔断构件46。该辐射热隔断构件46是反射器24或者隔热材等的哪一个均可。That is, if the
希望冷却块体28的温度被设定成比处于蒸发源4的反射器24的内侧的部件的哪一个都低的温度。另外,优选设定成与蒸镀材料21的蒸发温度相比为非常低的温度,例如,在蒸镀材料21为熔融类材料的情况下,优选设定在熔点附近,在为升华类材料的情况下,优选设定在升华开始温度以下。据此,从喷嘴旁边侵入到蒸发源4中的蒸镀材料21的粒子能够不是向蒸发源4的构成部件,例如热电偶、反射器24集中,而是向冷却块体28集中而析出。It is desirable that the temperature of the
另外,如图5或者图6所示,也可以在冷却块体28安装防粘板29。希望防粘板29与冷却块体28接触,由热传导性好的材料制作。另外,也可以是防粘板29的外侧的面通过喷砂等而具有凹凸,使附着的蒸镀材料不会脱落。另外,通过能够轻易地拆装防粘板29,使得能够容易地进行维护。In addition, as shown in FIG. 5 or FIG. 6 , an
而且,在实施例2中,将冷却液流通孔52a的U形转弯部52b设置在冷却块体28上,而在本实施例中,是设置在壳体27上。据此,由于冷却块体28经壳体27被间接地冷却,所以,能够比较简单地进行冷却液流通孔52a的加工,能够谋求低成本化。Furthermore, in the second embodiment, the
另外,如上述那样,在本实施例中也是由腔2、将壳体27贯通的冷却液流通孔52a构成,但是,当然并不限定于此结构,即使由U字状的配管构成,也能够得到同样的效果。In addition, as mentioned above, in this embodiment, the
如上所述,根据本发明,将冷却构件设在由隔热构件覆盖的当中,能够由冷却构件局部地产生与蒸镀材料蒸发的温度相比非常低的温度或者达到蒸镀材料的熔点以下的部分,据此,能够将进入到坩埚·加热构件和隔热构件之间的蒸镀材料的粒子集中在冷却构件45,使之析出。As described above, according to the present invention, the cooling member is provided in the middle covered by the heat insulating member, and the cooling member can locally generate a temperature that is very low compared with the evaporation temperature of the vapor deposition material or reaches below the melting point of the vapor deposition material. Partially, according to this, the particles of the vapor deposition material that entered between the crucible, the heating member and the heat insulating member can be collected on the cooling
另外,通过在冷却构件面向加热构件或者坩埚的部分设置隔热构件,能够抑制蒸镀工序的影响。In addition, by providing a heat insulating member at a portion where the cooling member faces the heating member or the crucible, the influence of the vapor deposition process can be suppressed.
再有,能够使蒸镀材料向加热构件(加热器)的端子、热电偶、坩埚、支承加热构件的构造体的附着为最小限度,抑制以往以蒸镀材料向这些部件的析出为起因而产生的膜质的劣化、对连续运转或者维护的障碍。In addition, it is possible to minimize the adhesion of the vapor deposition material to the terminals of the heating member (heater), thermocouples, crucibles, and structures supporting the heating member, and to suppress the deposition of the vapor deposition material to these parts, which has occurred in the past. Deterioration of membrane quality, obstacles to continuous operation or maintenance.
另外,通过在冷却构件的蒸镀材料析出的部分可安装可拆卸,且安装由热传导性好的材质制作的防粘板,能够简单地进行维护,能够维持性能。In addition, by detachably attaching and detachably attaching to the part of the cooling member where the vapor deposition material is deposited, and attaching a non-sticking plate made of a material with good thermal conductivity, maintenance can be easily performed and performance can be maintained.
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2012
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- 2013-02-18 TW TW102105598A patent/TW201339336A/en unknown
- 2013-02-19 CN CN2013100535083A patent/CN103361610A/en active Pending
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Also Published As
Publication number | Publication date |
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JP2013211138A (en) | 2013-10-10 |
TW201339336A (en) | 2013-10-01 |
KR20130111272A (en) | 2013-10-10 |
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