CN103346241A - Packaging structure of white LED lamp - Google Patents
Packaging structure of white LED lamp Download PDFInfo
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- CN103346241A CN103346241A CN2013102751547A CN201310275154A CN103346241A CN 103346241 A CN103346241 A CN 103346241A CN 2013102751547 A CN2013102751547 A CN 2013102751547A CN 201310275154 A CN201310275154 A CN 201310275154A CN 103346241 A CN103346241 A CN 103346241A
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Abstract
The invention relates to a packaging structure of a white LED lamp. The packaging structure of the white LED lamp comprises an aluminum or aluminum alloy base body. A heat conduction ceramic layer is deposited on the base body; a fluorescence ceramic layer and a copper conducting layer are deposited on the heat conduction ceramic layer; selective etching is conducted on the copper conducting layer and the fluorescence ceramic layer through masking to form a plurality of conducting substrates; LED chips are arranged on the conducting substrate. Because the thermal conductivity of the heat conduction ceramic layer is larger than 100W/mK, the packaging structure of the white LED lamp can effectively achieve heat conduction and heat transfer and solve heat dissipation problems of the blue-light LED chips.
Description
Technical field
The invention belongs to the technical field of electronic component, in particular, the present invention relates to a kind of encapsulating structure of white led lamps.
Background technology
LED is a kind of novel solid-state cold light source, its have simple in structure, in light weight, volume is little, power consumption less, response speed is fast and advantage such as easy to use, and enjoys people's favor.It is under same illumination, and power consumption and life-span all have remarkable advantages than incandescent lamp and fluorescent lamp.Therefore, at present people have formed a common recognition, namely LED be after incandescent lamp, fluorescent lamp and HID lamp the 4th generation light source, be acknowledged as the electric light source of tool development prospect of 21 century.
Yet described LED lamp need utilize heat conducting material to conduct heat.Need to adopt metallic matrix (being generally aluminium) for this reason, and between led chip and metallic matrix, need electricity to isolate.And some ceramic material has higher heat conduction efficiency and electricity is insulated.The ceramic material that uses high heat conduction through being everlasting between described led chip and the metallic matrix is as being used for providing electricity to isolate and the conductive intermediate materials of maintaining heat still for this reason.But in increasing the application, a plurality of led chips need be coupled in the functional structure with electricity isolation and heat conduction.And in order to hold a plurality of led chips, need to use larger sized basis material, for example need to use bigger metallic matrix and ceramic wafer.If yet when described led chip being coupled on the ceramic component at single interface, the led chip of coupling will cause difficult heat transfer, and may cause electrically conduction and be short-circuited.
Summary of the invention
In order to overcome the above-mentioned technical problem that exists in the prior art, the object of the present invention is to provide a kind of encapsulating structure of white led lamps.
In order to overcome above-mentioned technical problem and to realize goal of the invention, technical scheme of the present invention is as follows:
The encapsulating structure of white led lamps of the present invention comprises the aluminum or aluminum alloy matrix, at described matrix deposition thermal conductive ceramic layer; Deposit luminescent ceramic layer and copper conductive layer at described thermal conductive ceramic layer, and by mask described copper conductive layer and luminescent ceramic layer are carried out selective etch and form a plurality of conductive bases, described conductive base is provided with led chip.
Wherein, described thermal conductive ceramic layer is AlN or AlON, and its thickness is 50-200 μ m;
Wherein, described thermal conductive ceramic layer is the AlN layer, and prepares by the PECVD method, and its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 300-320 ℃, operating pressure is 100-200Pa, wherein AlCl
3Flow be 150-250 sccm, NH
3Flow be 200-300 sccm, N
2Flow 100-200 sccm, H
2Flow be 1000-1200 sccm, rf frequency is 13.56MH
Z, radio-frequency power is 50-100W.
Wherein, described thermal conductive ceramic layer is AlON, and prepares by the PECVD method, and its reaction system is AlCl
3-N
2O-N
2-H
2, reaction temperature is 250-280 ℃, operating pressure is 100-200Pa, wherein AlCl
3Flow be 150-250 sccm, N
2The flow of O is 200-300 sccm, N
2Flow 100-200 sccm, H
2Flow be 1000-1200 sccm, rf frequency is 13.56MH
Z, radio-frequency power is 50-100W.
Wherein, described luminescent ceramic layer is cerium and boron doped YAG layer, adopt laser ablation technology to prepare, described laser ablation process conditions are as follows: be pressed into thin slice as target after the boron of the cerium powder of the YAG powder of 98wt%, 1.5-1.75wt% and 0.25-0.50wt% is mixed; Adopt the Nd:YAG laser then, the laser pulse power power of described Nd:YAG laser is 10
6W/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and the target is 70 cm, and depositing temperature is 550-650 ℃, and thickness is 10-20 μ m.The applicant finds, the cerium that mixes by the method for laser ablation and the inhomogeneities of boron are no more than 5%, make luminous intensity and the intensity of giving out light significantly improve, and luminous also more even.
As preferably, between described aluminum or aluminum alloy matrix and described thermal conductive ceramic layer, also have the amorphous aluminum transition zone, the thickness of described amorphous aluminum transition zone is 100-500 nm.
Further preferably, described amorphous aluminum transition zone prepares by radio frequency sputtering technology, and target is that purity is 99.99% aluminium target, and sputter gas is Ar, and sputtering power is 0.5-1.2 kW, and rf frequency is 13.56MHz, and operating pressure is 3-5 * 10
-3Torr, substrate temperature are 25-50 ℃.By the remarkable caking property between reinforced insulation thermal conductive ceramic layer and the aluminum substrate of deposited amorphous attitude aluminium transition zone, and can significantly reduce the thermal stress that causes because of expansion coefficient difference, improve the reliability of structural entity.
Wherein, described copper conductive layer prepares by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or the plasma reinforced chemical vapour deposition method of routine.
Wherein, described selective etch prepares by dry-etching method.
Technical scheme of the present invention has following beneficial effect compared to existing technology:
(1) encapsulating structure of white led lamps of the present invention has larger sized metal substrate, and can hold a plurality of blue-light LED chips, and has reliable electricity isolation and heat isolation between described a plurality of blue-light LED chip.
(2) in the encapsulating structure of white led lamps of the present invention, the thermal conductivity of described thermal conductive ceramic layer can effectively realize heat conduction and transfer greater than 100 W/mK, solves the heat dissipation problem of a plurality of blue-light LED chips.
(3) in the present invention, the applicant finds by laser ablation technology, and control by suitable parameters, can be so that described cerium and boron doped YAG layer, composition mixes more even, and make 85% of described cerium and the luminous light intensity of boron doped YAG layer under cathode-ray exciting concentrate on 520-560nm by composition and parameter control, thereby under the exciting of blue-ray LED, significantly improved luminous efficiency.
Description of drawings
Fig. 1 is the schematic diagram of the encapsulating structure of white led lamps of the present invention.
Embodiment
As shown in Figure 1, the encapsulating structure of white led lamps of the present invention comprises aluminum or aluminum alloy matrix 1, at described matrix 1 deposition thermal conductive ceramic layer 2; Deposit luminescent ceramic layer 3 and copper conductive layer 4 at described thermal conductive ceramic layer 2, and by mask described copper conductive layer 4 and luminescent ceramic layer 3 are carried out selective etch and form a plurality of conductive bases 5, described conductive base 5 is provided with led chip 6.
Embodiment 1
The encapsulating structure of the described white led lamps of present embodiment comprises the aluminum or aluminum alloy matrix, at described matrix deposition thermal conductive ceramic layer; Deposit luminescent ceramic layer and copper conductive layer at described thermal conductive ceramic layer, and by mask described copper conductive layer and luminescent ceramic layer are formed a plurality of conductive bases by the selectivity dry ecthing, described conductive base is provided with blue-light LED chip.Described thermal conductive ceramic layer is AlN, and thickness is 100 μ m; And prepare by the PECVD method, its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 320 ℃, operating pressure is 150Pa, wherein AlCl
3Flow be 200 sccm, NH
3Flow be 300 sccm, N
2Flow 100 sccm, H
2Flow be 1200 sccm, rf frequency is 13.56MH
Z, radio-frequency power is 100W.Described luminescent ceramic layer is cerium and boron doped YAG layer, adopts laser ablation technology to prepare, and described laser ablation process conditions are as follows: be pressed into thin slice as target after the boron of the cerium powder of the YAG powder of 98wt%, 1.5wt% and 0.50wt% is mixed; Adopt the Nd:YAG laser then, the laser pulse power power of described Nd:YAG laser is 10
6W/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and the target is 70 cm, and depositing temperature is 650 ℃, and thickness is 10 μ m.The cerium that method by described laser ablation is mixed and the inhomogeneities of boron are no more than 5%, make luminous intensity and the intensity of giving out light significantly improve, and luminous also more even.And sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or the plasma reinforced chemical vapour deposition method of described copper conductive layer by routine prepares.
Embodiment 2
The encapsulating structure of the described white led lamps of present embodiment comprises the aluminum or aluminum alloy matrix, at described matrix deposition thermal conductive ceramic layer; Deposit luminescent ceramic layer and copper conductive layer at described thermal conductive ceramic layer, and by mask described copper conductive layer and luminescent ceramic layer are formed a plurality of conductive bases by the selectivity dry ecthing, described conductive base is provided with blue-light LED chip.Described thermal conductive ceramic layer is AlON, and prepares by the PECVD method, and its reaction system is AlCl
3-N
2O-N
2-H
2, reaction temperature is 250 ℃, operating pressure is 180Pa, wherein AlCl
3Flow be 200 sccm, N
2The flow of O is 200 sccm, N
2Flow 200 sccm, H
2Flow be 1200 sccm, rf frequency is 13.56MH
Z, radio-frequency power is 100W.Described luminescent ceramic layer is cerium and boron doped YAG layer, adopts laser ablation technology to prepare, and described laser ablation process conditions are as follows: be pressed into thin slice as target after the boron of the cerium powder of the YAG powder of 98wt%, 1.75wt% and 0.25wt% is mixed; Adopt the Nd:YAG laser then, the laser pulse power power of described Nd:YAG laser is 10
6W/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and the target is 72.5cm, and depositing temperature is 600 ℃, and thickness is 10 μ m.The cerium that method by described laser ablation is mixed and the inhomogeneities of boron are no more than 5%, make luminous intensity and the intensity of giving out light significantly improve, and luminous also more even.And sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or the plasma reinforced chemical vapour deposition method of described copper conductive layer by routine prepares.
Embodiment 3
The encapsulating structure of the described white led lamps of present embodiment comprises the aluminum or aluminum alloy matrix, and first deposited amorphous attitude aluminium transition zone deposits the thermal conductive ceramic layer then on described matrix; Deposit luminescent ceramic layer and copper conductive layer at described thermal conductive ceramic layer, and by mask described copper conductive layer and luminescent ceramic layer are formed a plurality of conductive bases by the selectivity dry ecthing, described conductive base is provided with blue-light LED chip.The thickness of described amorphous aluminum transition zone is 100-500 nm.Described amorphous aluminum transition zone prepares by radio frequency sputtering technology, and target is that purity is 99.99% aluminium target, and sputter gas is Ar, and sputtering power is 1.0kW, and rf frequency is 13.56MHz, and operating pressure is 3-5 * 10
-3Torr, substrate temperature are 25 ℃.Described thermal conductive ceramic layer is AlON, and prepares by the PECVD method, and its reaction system is AlCl
3-N
2O-N
2-H
2, reaction temperature is 250 ℃, operating pressure is 180Pa, wherein AlCl
3Flow be 200 sccm, N
2The flow of O is 200 sccm, N
2Flow 200 sccm, H
2Flow be 1200 sccm, rf frequency is 13.56MH
Z, radio-frequency power is 100W.Described luminescent ceramic layer is cerium and boron doped YAG layer, adopts laser ablation technology to prepare, and described laser ablation process conditions are as follows: be pressed into thin slice as target after the boron of the cerium powder of the YAG powder of 98wt%, 1.75wt% and 0.25wt% is mixed; Adopt the Nd:YAG laser then, the laser pulse power power of described Nd:YAG laser is 10
6W/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and the target is 72.5cm, and depositing temperature is 600 ℃, and thickness is 10 μ m.The cerium that method by described laser ablation is mixed and the inhomogeneities of boron are no more than 5%, make luminous intensity and the intensity of giving out light significantly improve, and luminous also more even.And sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or the plasma reinforced chemical vapour deposition method of described copper conductive layer by routine prepares.
For the ordinary skill in the art, be to be understood that and do not breaking away from the scope disclosed by the invention, can adopt to be equal to and replace or equivalent transformation form enforcement above-described embodiment.Protection scope of the present invention is not limited to the specific embodiment of embodiment part, and the execution mode of short of disengaging invention essence all is interpreted as having dropped within the protection range of requirement of the present invention.
Claims (8)
1. the encapsulating structure of a white led lamps comprises the aluminum or aluminum alloy matrix, it is characterized in that at described matrix deposition thermal conductive ceramic layer; Deposit luminescent ceramic layer and copper conductive layer successively on described thermal conductive ceramic layer, and by mask described copper conductive layer and luminescent ceramic layer are carried out selective etch and form a plurality of conductive bases, described conductive base is provided with led chip.
2. the encapsulating structure of white led lamps according to claim 1 it is characterized in that described thermal conductive ceramic layer is AlN or AlON, and its thickness is 50-200 μ m.
3. the encapsulating structure of white led lamps according to claim 1 and 2 is characterized in that described thermal conductive ceramic layer is the AlN layer, and prepares by the PECVD method that its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 300-320 ℃, operating pressure is 100-200Pa, wherein AlCl
3Flow be 150-250 sccm, NH
3Flow be 200-300 sccm, N
2Flow 100-200 sccm, H
2Flow be 1000-1200 sccm, rf frequency is 13.56MH
Z, radio-frequency power is 50-100W.
4. the encapsulating structure of white led lamps according to claim 1 and 2 is characterized in that described thermal conductive ceramic layer is AlON, and prepares by the PECVD method that its reaction system is AlCl
3-N
2O-N
2-H
2, reaction temperature is 250-280 ℃, operating pressure is 100-200Pa, wherein AlCl
3Flow be 150-250 sccm, N
2The flow of O is 200-300 sccm, N
2Flow 100-200 sccm, H
2Flow be 1000-1200 sccm, rf frequency is 13.56MH
Z, radio-frequency power is 50-100W.
5. according to the encapsulating structure of each described white led lamps of claim 1-4, it is characterized in that described luminescent ceramic layer is cerium and boron doped YAG layer, adopt laser ablation technology to prepare, described laser ablation process conditions are as follows: be pressed into thin slice as target after the boron of the cerium powder of the YAG powder of 98wt%, 1.5-1.75wt% and 0.25-0.50wt% is mixed; Adopt the Nd:YAG laser then, the laser pulse power power of described Nd:YAG laser is 10
6W/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and the target is 70 cm, and depositing temperature is 550-650 ℃, and thickness is 10-20 μ m.
6. the encapsulating structure of white led lamps according to claim 3 it is characterized in that also having the amorphous aluminum transition zone between described aluminum or aluminum alloy matrix and described thermal conductive ceramic layer, and the thickness of described amorphous aluminum transition zone is 100-500 nm.
7. the encapsulating structure of white led lamps according to claim 6, it is characterized in that described amorphous aluminum transition zone prepares by radio frequency sputtering technology, target is that purity is 99.99% aluminium target, sputter gas is Ar, sputtering power is 0.5-1.2 kW, rf frequency is 13.56MHz, and operating pressure is 3-5 * 10-3 torr, and substrate temperature is 25-50 ℃.
8. according to the encapsulating structure of claim 6 or 7 described white led lamps, it is characterized in that described led chip is blue-ray LED.
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| CN103346241B CN103346241B (en) | 2015-09-30 |
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Cited By (6)
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| WO2019024365A1 (en) * | 2017-08-03 | 2019-02-07 | 深圳市光峰光电技术有限公司 | Fluorescence chip, manufacturing method therefor, and light-emitting apparatus |
| WO2020137763A1 (en) * | 2018-12-27 | 2020-07-02 | デンカ株式会社 | Fluorescent substrate, light-emitting substrate, and lighting device |
| US12027652B2 (en) | 2018-12-27 | 2024-07-02 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
| US12040436B2 (en) | 2018-12-27 | 2024-07-16 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
| US12068438B2 (en) | 2018-12-27 | 2024-08-20 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
| US12107196B2 (en) | 2018-12-27 | 2024-10-01 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019024365A1 (en) * | 2017-08-03 | 2019-02-07 | 深圳市光峰光电技术有限公司 | Fluorescence chip, manufacturing method therefor, and light-emitting apparatus |
| WO2020137763A1 (en) * | 2018-12-27 | 2020-07-02 | デンカ株式会社 | Fluorescent substrate, light-emitting substrate, and lighting device |
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| US12068438B2 (en) | 2018-12-27 | 2024-08-20 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
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| US12107196B2 (en) | 2018-12-27 | 2024-10-01 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
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| CN103346241B (en) | 2015-09-30 |
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