CN103338022B - The MEMS resonator of frequency-adjustable - Google Patents
The MEMS resonator of frequency-adjustable Download PDFInfo
- Publication number
- CN103338022B CN103338022B CN201310306960.6A CN201310306960A CN103338022B CN 103338022 B CN103338022 B CN 103338022B CN 201310306960 A CN201310306960 A CN 201310306960A CN 103338022 B CN103338022 B CN 103338022B
- Authority
- CN
- China
- Prior art keywords
- resonant element
- frequency
- electrode
- mems resonator
- structural
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Abstract
Description
技术领域technical field
本发明涉及射频微机电(RFMEMS)技术领域,更特别地,本发明涉及射频微机械谐振器件,特别是一种频率可调的MEMS谐振器。The present invention relates to the field of radio frequency micro-electromechanical (RFMEMS) technology, and more particularly, the present invention relates to a radio frequency micro-mechanical resonator device, especially a MEMS resonator with adjustable frequency.
背景技术Background technique
随着无线通信系统向着低功耗、小尺寸、多功能方向发展以及对系统集成度要求的提高,迫切需要开发新型的结构以取代传统的无线收发系统。射频谐振器件作为无线收发结构中的滤波以及频率参考器件,具有广泛的应用需求。目前应用最为广泛的射频谐振器件包括石英、陶瓷、表面声波(SAW)以及体声波(FBAR)器件,它们可以达到RF和IF滤波器所需的高Q值(500-10000),但是它们都是片外(off-chip)分立元件,不利于系统集成以及小型化。而MEMS器件由于具有小尺寸、低成本、低功耗、高Q值、高线性度、与IC工艺集成等优点,被认为是取代传统片外分立元件最好的选择之一,为实现无线通信在小型化、低功耗、便携式设备方面的广泛应用提供了基础【1】。With the development of wireless communication systems towards low power consumption, small size, and multi-functions and the improvement of system integration requirements, it is urgent to develop new structures to replace traditional wireless transceiver systems. As a filtering and frequency reference device in a wireless transceiver structure, a radio frequency resonant device has a wide range of application requirements. The most widely used RF resonant devices include quartz, ceramic, surface acoustic wave (SAW) and bulk acoustic wave (FBAR) devices, which can achieve the high Q value (500-10000) required by RF and IF filters, but they are all Off-chip discrete components are not conducive to system integration and miniaturization. MEMS devices are considered to be one of the best choices to replace traditional off-chip discrete components due to their small size, low cost, low power consumption, high Q value, high linearity, and integration with IC processes. Wide application in miniaturized, low-power, portable devices provides the basis [1].
为了适应未来无线通信系统对多频带、多功能、多模式的应用需求,需要选频器件自身具有良好的频率特性,降低结构的复杂性。而针对多频带的应用需求,通常需要组建谐振器阵列【2】或者滤波器阵列【3】,以实现单芯片系统,这样既增加了系统的复杂程度,又提高了成本,因此,需要开发新的结构满足多频带的应用需求。In order to meet the multi-band, multi-functional and multi-mode application requirements of future wireless communication systems, frequency-selective devices are required to have good frequency characteristics and reduce the complexity of the structure. For multi-band application requirements, it is usually necessary to build a resonator array [2] or filter array [3] to realize a single-chip system, which not only increases the complexity of the system, but also increases the cost. Therefore, it is necessary to develop a new The structure meets the application requirements of multi-band.
对此,本发明提出了一种新型的频率可调的MEMS谐振器,利用该结构可以实现不同谐振频率的输出。通过改变微结构的个数、形状大小以及与驱动电极的相对位置,实现谐振器的不同频率输出。此外,通过增加电极个数,激励高阶振动模态,获得高频率输出,通过改变电极之间的连接方式,激励不同阶的谐振模态,获得不同阶数的谐振频率输出。利用本发明提供的这种谐振器,能够降低无线通信系统的复杂性,大幅度提高系统的集成度,从而进一步降低系统成本。In view of this, the present invention proposes a novel frequency-tunable MEMS resonator, and the output of different resonant frequencies can be realized by using this structure. Different frequency outputs of the resonator are realized by changing the number, shape and size of the microstructure and the relative position to the driving electrodes. In addition, by increasing the number of electrodes, high-order vibration modes are excited to obtain high-frequency output, and by changing the connection mode between electrodes, different-order resonance modes are excited to obtain different-order resonance frequency outputs. The resonator provided by the invention can reduce the complexity of the wireless communication system, greatly improve the integration of the system, and further reduce the system cost.
引用文献:Citation:
【1】C.T.-C.Nguyen,VibratingRFMEMSoverview:applicationstowirelesscommunications,inProc.SPIE:Micromachin.Microfabric.ProcessTechnol.,SanJose,CA,vol.5715,Jan.22-27,2005,pp.11-25.【1】C.T.-C.Nguyen, VibratingRFMEMSoverview: applicationstowirelesscommunications, inProc.SPIE: Micromachin.Microfabric.ProcessTechnol., SanJose, CA, vol.5715, Jan.22-27, 2005, pp.11-25.
【2】H.ChandrahalimandS.A.Bhave,Digitally-tunableMEMSfilterusingmechanically-coupledresonatorarray,inProc.IEEE21stInt.Conf.MicroElectroMech.Syst.(MEMS’08),Jan.13-17,2008,pp.1020-1023.【2】H.ChandrahalimandS.A.Bhave, Digitally-tunableMEMS filter using mechanically-coupled resonator array, inProc.IEEE21stInt.Conf.MicroElectroMech.Syst.(MEMS'08), Jan.13-17, 2008, pp.1020-1023.
【3】C.T.-C.Nguyen,MEMStechnologiesanddevicesforsingle-chipRFfront-ends(invited),Tech.Dig.,CICMT’06,Denver,Colorado,April25-26,2006.【3】C.T.-C.Nguyen, MEMStechnologies and devices for single-chip RF front-ends (invited), Tech.Dig., CICMT'06, Denver, Colorado, April25-26, 2006.
发明内容Contents of the invention
有鉴于此,本发明的主要目的是提出一种新型的频率可调的MEMS谐振器,在不增加结构复杂性的情况下,实现多种不同频率输出。In view of this, the main purpose of the present invention is to propose a novel frequency-tunable MEMS resonator, which can realize multiple different frequency outputs without increasing the complexity of the structure.
为达到上述目的,本发明提出一种频率可调的MEMS谐振器,包括:In order to achieve the above object, the present invention proposes a MEMS resonator with adjustable frequency, comprising:
一谐振单元,为圆盘形、圆环形或对称多边形结构,其中心为振动位移节点,该谐振单元由一位于位移节点处的支撑锚点支撑,该谐振单元的表面设有多个微结构;A resonant unit is a disc-shaped, circular or symmetrical polygonal structure, the center of which is a vibration displacement node, the resonant unit is supported by a support anchor point located at the displacement node, and the surface of the resonant unit is provided with a plurality of microstructures ;
多个电极,其位于谐振单元的外围或上方,各电极之间有一间隙,各电极与谐振单元之间直接接触或有一间隙。A plurality of electrodes are located on the periphery or above the resonant unit, there is a gap between each electrode, and there is a direct contact or a gap between each electrode and the resonant unit.
从上述技术方案可以看出,本发明的有益效果是:As can be seen from the foregoing technical scheme, the beneficial effects of the present invention are:
1、本发明通过控制微结构的个数、位置、以及形状大小,实现了谐振频率的灵活调节,且在不减小器件尺寸的情况下,实现高频输出。1. The present invention realizes the flexible adjustment of the resonant frequency by controlling the number, position, and shape of the microstructure, and realizes high-frequency output without reducing the size of the device.
2、本发明通过简单的微结构设计以及电极互连,在不增加结构复杂度的情况下,实现了多种不同频率输出的谐振器,这些简单的结构单元将替代无线通信系统中的谐振器或滤波器阵列,可大大提高无线通信系统的集成度,降低系统的复杂性和制作成本。2. Through simple microstructure design and electrode interconnection, the present invention realizes a variety of resonators with different frequency outputs without increasing structural complexity. These simple structural units will replace resonators in wireless communication systems Or a filter array, which can greatly improve the integration of the wireless communication system and reduce the complexity and production cost of the system.
附图说明Description of drawings
为使本发明的目的、技术方案和优点更加清楚明白,以下结合实施例及附图,对本发明进一步详细说明,其中:In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments and accompanying drawings, wherein:
图1、图2、图3为本发明提出的频率可调的MEMS谐振器的结构示意图;Fig. 1, Fig. 2, Fig. 3 are the structural representations of the frequency-tunable MEMS resonator proposed by the present invention;
图4为圆盘形MEMS谐振器在对无微结构区域对应的电极施加激励时的结构示意图;Fig. 4 is the schematic diagram of the structure of the disk-shaped MEMS resonator when the electrodes corresponding to the microstructure-free region are excited;
图5为图4的谐振模态的示意图;Fig. 5 is the schematic diagram of the resonant mode of Fig. 4;
图6为圆盘形MEMS谐振器在对微结构区域对应的电极施加激励时的结构示意图;Fig. 6 is a structural schematic diagram of a disk-shaped MEMS resonator when excitation is applied to electrodes corresponding to the microstructure region;
图7为图6谐振模态的示意图。FIG. 7 is a schematic diagram of a resonance mode in FIG. 6 .
具体实施方式detailed description
本发明提供一种频率可调的MEMS谐振器,如图1、图2、图3所示,具体包括:The present invention provides a MEMS resonator with adjustable frequency, as shown in Fig. 1, Fig. 2 and Fig. 3, specifically comprising:
一谐振单元1,为圆盘形,圆环形或对称多边形结构,其中圆环形谐振单元1在不减小结构尺寸的情况下,可以获得更高的谐振频率,其中心为振动位移节点11,该谐振单元1由一位于位移节点11处的支撑锚点12支撑,该谐振单元1的材料为硅基材料、压电材料或蓝宝石,所述谐振单元1的表面设有多个微结构13,沿谐振单元1的等半径圆周均匀分布,该谐振单元1上的微结构13是小孔或齿状结构,通过改变微结构13与驱动电极的相对位置,以激励不同的谐振模态,从而获得不同的频率输出,改变微结构的个数、形状大小以及在谐振单元中的位置,从而获得不同的频率调节范围。A resonant unit 1 is a disc-shaped, circular or symmetrical polygonal structure, wherein the circular resonant unit 1 can obtain a higher resonance frequency without reducing the size of the structure, and its center is the vibration displacement node 11 , the resonant unit 1 is supported by a supporting anchor point 12 located at the displacement node 11, the material of the resonant unit 1 is silicon-based material, piezoelectric material or sapphire, and the surface of the resonant unit 1 is provided with a plurality of microstructures 13 , uniformly distributed along the equal-radius circumference of the resonant unit 1, the microstructure 13 on the resonant unit 1 is a small hole or a tooth-like structure, by changing the relative position of the microstructure 13 and the driving electrode, different resonance modes are excited, thereby To obtain different frequency outputs, change the number, shape, size and position of the microstructure in the resonant unit to obtain different frequency adjustment ranges.
多个电极2,其位于谐振单元1的外围或上方,各电极之间有一间隙,各电极与谐振单元1之间直接接触或有一间隙,该电极2材料为金属或掺杂半导体材料,所述电极2和谐振单元1之间的间隙是空气填充或固态介质填充或空气和固态介质共同填充。电极与谐振单元之间可采用静电驱动、压电驱动或静电-压电的混合驱动方式。A plurality of electrodes 2, which are located on the periphery or above the resonant unit 1, there is a gap between each electrode, and there is a direct contact between each electrode and the resonant unit 1 or there is a gap, the material of the electrodes 2 is metal or doped semiconductor material, said The gap between the electrode 2 and the resonance unit 1 is filled with air or solid medium or both air and solid medium. Electrostatic drive, piezoelectric drive or electrostatic-piezoelectric hybrid drive can be used between the electrodes and the resonant unit.
本发明通过控制微结构的个数、位置、以及形状大小,实现了谐振频率的灵活调节,且在不减小器件尺寸的情况下,实现高频输出。The invention realizes the flexible adjustment of the resonant frequency by controlling the number, position, and shape of the microstructure, and realizes high-frequency output without reducing the size of the device.
下面以圆盘形MEMS谐振器为例详细介绍结构特征,如图4和图5、图6和图7所示,分别为圆盘形MEMS谐振器对无微结构区域对应的电极施加激励时的结构示意图以及对有微结构区域对应的电极施加激励时的结构示意图,包括:The structural features of the disk-shaped MEMS resonator are described in detail below, as shown in Figure 4 and Figure 5, Figure 6 and Figure 7, respectively, when the disk-shaped MEMS resonator applies excitation to the electrode corresponding to the microstructure-free area. The schematic diagram of the structure and the schematic diagram of the structure when excitation is applied to the electrodes corresponding to the microstructure area, including:
圆盘形谐振单元1,半径18um,厚度3um,谐振单元1的材料为多晶硅,表面设有6个扇形小孔微结构13,小孔内外半径分别为4um和8um,小孔中心沿谐振单元1的半径为10um的等半径圆周均匀分布,多个电极2位于谐振单元1的外围,依次对应于谐振单元上的微结构区域6和无微结构区域7,各电极之间有一间隙,多个电极构成了谐振单元的驱动电极8和检测电极9,电极与谐振单元之间采用静电传输,通过改变微结构13与驱动电极8的相对位置,以获得不同的频率输出。Disc-shaped resonant unit 1 with a radius of 18um and a thickness of 3um. The material of the resonant unit 1 is polysilicon. There are 6 fan-shaped small hole microstructures 13 on the surface. The inner and outer radii of the small holes are 4um and 8um respectively. The equal-radius circle with a radius of 10um is evenly distributed. A plurality of electrodes 2 are located on the periphery of the resonance unit 1, corresponding to the microstructure area 6 and the microstructure-free area 7 on the resonance unit in turn. There is a gap between each electrode. Multiple electrodes The drive electrode 8 and the detection electrode 9 constituting the resonant unit, electrostatic transmission is used between the electrodes and the resonant unit, and different frequency outputs can be obtained by changing the relative position of the microstructure 13 and the drive electrode 8 .
对驱动电极8施加激励信号时,该谐振单元1工作在3阶回音壁振动模态(3rdWGM),当对无微结构区域7对应的电极施加激励时,如图4所示,微结构13处于节点位移区域,电极9检测到输出频率140MHz,当对微结构区域6对应的电极施加激励时,如图6所示,微结构13处于大位移区域,电极9检测到输出频率145MHz,图4和图6所示结构输出的频率差值大小与微结构13的个数、形状大小以及在谐振单元1中的位置有关。When an excitation signal is applied to the driving electrode 8, the resonance unit 1 works in the third-order whispering gallery vibration mode ( 3rd WGM). When an excitation is applied to the electrode corresponding to the microstructure-free region 7, as shown in FIG. 13 is in the node displacement region, and the electrode 9 detects an output frequency of 140MHz. When excitation is applied to the electrode corresponding to the microstructure region 6, as shown in Figure 6, the microstructure 13 is in the large displacement region, and the output frequency of the electrode 9 is 145MHz, as shown in Fig. 4 and the frequency difference output by the structures shown in FIG. 6 are related to the number, shape and size of the microstructures 13 and their positions in the resonant unit 1.
增加电极2和微结构13的个数,可以激励更高阶的振动模态(3阶以上回音壁模态),从而获得更高的谐振频率(>200MHz),此外,通过改变电极之间的连接方式,可激励不同阶的谐振模态,获得不同阶数的谐振频率输出。Increasing the number of electrodes 2 and microstructures 13 can excite higher-order vibration modes (whispering gallery modes above order 3), thereby obtaining higher resonance frequencies (>200MHz). In addition, by changing the The connection mode can excite different orders of resonance modes and obtain different orders of resonance frequency outputs.
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310306960.6A CN103338022B (en) | 2013-07-22 | 2013-07-22 | The MEMS resonator of frequency-adjustable |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310306960.6A CN103338022B (en) | 2013-07-22 | 2013-07-22 | The MEMS resonator of frequency-adjustable |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103338022A CN103338022A (en) | 2013-10-02 |
CN103338022B true CN103338022B (en) | 2016-03-09 |
Family
ID=49246137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310306960.6A Active CN103338022B (en) | 2013-07-22 | 2013-07-22 | The MEMS resonator of frequency-adjustable |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103338022B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104617360B (en) * | 2013-11-05 | 2018-04-27 | 中国科学院半导体研究所 | The MEMS filter of frequency-adjustable |
CN103716009B (en) * | 2013-12-23 | 2017-06-23 | 汇隆电子(金华)有限公司 | Mems resonator |
CN103762956A (en) * | 2013-12-31 | 2014-04-30 | 中国科学院半导体研究所 | Frequency switchable micro mechanical resonator and manufacture method thereof |
CN103913159B (en) * | 2014-04-29 | 2016-05-18 | 重庆大学 | A kind of tunnel type MEMS gyroscope |
CN107655595B (en) * | 2017-10-19 | 2020-01-14 | 机械工业仪器仪表综合技术经济研究所 | Micro-electromechanical resonance structure, resonator and pressure sensor |
FI128436B (en) | 2018-02-08 | 2020-05-15 | Tikitin Oy | MEMS resonator |
CN108955662B (en) * | 2018-04-27 | 2022-08-23 | 苏州大学 | Central axis symmetric resonance gyroscope with frequency difference adjusting structure |
CN110190826B (en) * | 2019-05-31 | 2020-10-02 | 厦门市三安集成电路有限公司 | Resonant thin film layer, resonator and filter |
CN112865740B (en) * | 2020-12-31 | 2025-01-17 | 中国科学院半导体研究所 | MEMS resonator based on modal redistribution and adjusting method thereof |
CN112845002B (en) * | 2020-12-31 | 2022-01-14 | 武汉大学 | MEMS broadband ultrasonic transducer array |
CN116470880B (en) * | 2023-06-20 | 2023-09-19 | 麦斯塔微电子(深圳)有限公司 | Anti-symmetrically driven mems resonator |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102388533A (en) * | 2009-04-09 | 2012-03-21 | Nxp股份有限公司 | Mems resonator |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8040207B2 (en) * | 2009-01-15 | 2011-10-18 | Infineon Technologies Ag | MEMS resonator devices with a plurality of mass elements formed thereon |
US8115573B2 (en) * | 2009-05-29 | 2012-02-14 | Infineon Technologies Ag | Resonance frequency tunable MEMS device |
JP5667391B2 (en) * | 2010-08-11 | 2015-02-12 | 日本電波工業株式会社 | Disc type MEMS vibrator |
-
2013
- 2013-07-22 CN CN201310306960.6A patent/CN103338022B/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102388533A (en) * | 2009-04-09 | 2012-03-21 | Nxp股份有限公司 | Mems resonator |
Also Published As
Publication number | Publication date |
---|---|
CN103338022A (en) | 2013-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103338022B (en) | The MEMS resonator of frequency-adjustable | |
US6985051B2 (en) | Micromechanical resonator device and method of making a micromechanical device | |
CN110661506B (en) | RF-MEMS resonator based on bulk acoustic wave vibration mode coupling | |
TWI424687B (en) | Resonator and periodic structure | |
Piazza et al. | Low motional resistance ring-shaped contour-mode aluminum nitride piezoelectric micromechanical resonators for UHF applications | |
JP2004507921A (en) | Micromechanical resonance device and micromechanical device using the same | |
CN104617360B (en) | The MEMS filter of frequency-adjustable | |
US7119636B2 (en) | Micromechanical resonator device having a desired mode shape | |
KR100631216B1 (en) | Air gap thin film bulk acoustic resonator and manufacturing method thereof | |
CN103762956A (en) | Frequency switchable micro mechanical resonator and manufacture method thereof | |
EP2987239B1 (en) | A nanomechanical resonator array and production method thereof | |
CN104917476B (en) | Method for manufacturing acoustic wave resonator | |
CN113114149B (en) | In-plane stretching mode radio frequency micro-electromechanical resonator | |
JP4341288B2 (en) | MEMS resonator, method of manufacturing the same, and filter | |
Kan et al. | A novel multiple-frequency RF-MEMS resonator based on the whispering gallery modes | |
CN103326691B (en) | The micromechanical resonance device that frequency is changeable | |
CN113271080B (en) | Annular structure wine glass modal radio frequency micro-electromechanical resonator | |
JP2009284021A (en) | Piezoelectric thin-film resonator, filter circuit, and communication equipment using the same | |
Wang et al. | RF MEMS resonators: getting the right frequency and Q | |
Piazza et al. | Aluminum Nitride contour-mode vibrating RF MEMS | |
Matsumura et al. | Selective mode excitation of piezoelectric disk-type resonator by electrode pattern definition | |
WO2019226498A1 (en) | High electromechanical coupling strength hollow disk resonators | |
CN111865249B (en) | Resonant structure and method of making the same | |
Nguyen | Mechanical radio | |
Oita | RF MEMS: Focusing on the next step |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |