CN103325689A - Manufacturing method of heat dissipation structure - Google Patents
Manufacturing method of heat dissipation structure Download PDFInfo
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- CN103325689A CN103325689A CN201210074799XA CN201210074799A CN103325689A CN 103325689 A CN103325689 A CN 103325689A CN 201210074799X A CN201210074799X A CN 201210074799XA CN 201210074799 A CN201210074799 A CN 201210074799A CN 103325689 A CN103325689 A CN 103325689A
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- Prior art keywords
- heat dissipation
- manufacturing
- heat
- film
- dissipation structure
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 19
- 239000010432 diamond Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 229920000642 polymer Polymers 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims abstract 5
- 239000004816 latex Substances 0.000 claims abstract 3
- 229920000126 latex Polymers 0.000 claims abstract 3
- 239000004065 semiconductor Substances 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 6
- 239000007787 solid Substances 0.000 abstract description 3
- IUHFWCGCSVTMPG-UHFFFAOYSA-N [C].[C] Chemical group [C].[C] IUHFWCGCSVTMPG-UHFFFAOYSA-N 0.000 abstract 1
- 235000013339 cereals Nutrition 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000004908 Emulsion polymer Substances 0.000 description 7
- 150000001721 carbon Chemical group 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
本发明公开了一种散热结构的制作方法。首先提供一散热基板，接着于该散热基板的一面形成钻石颗粒或薄膜；于该钻石颗粒或薄膜上涂布一乳胶聚合物层，构成一散热器件，最后将该散热器件与一发热器件结合在一起。由于钻石本身的分子结构为碳-碳链，与乳胶聚合物等有机高分子结构具有良好的化学亲合性及结合性，故在涂布后亦结合成为一体，并在室温下为一固体膜，不会产生空气间隙或贴合不致密等问题。
The present invention discloses a method for manufacturing a heat dissipation structure. First, a heat dissipation substrate is provided, and then diamond particles or a film are formed on one side of the heat dissipation substrate; a latex polymer layer is coated on the diamond particles or the film to form a heat dissipation device, and finally the heat dissipation device is combined with a heating device. Since the molecular structure of diamond itself is a carbon-carbon chain, it has good chemical affinity and bonding with organic macromolecular structures such as latex polymers, so it is also combined into one after coating and is a solid film at room temperature, and will not produce problems such as air gaps or loose bonding.
Description
Technical field
The present invention relates to a kind of method for fabricating structure of heat elimination.
Background technology
Along with the microization of semiconductor integrated device, the heat dissipation problem that influences semiconductor integrated device operation usefulness also comes into one's own gradually.Traditional radiator structure is at heater members one radiating fin to be set, and is provided with a thermal interface material layer between heater members and radiating fin usually.
Above-mentioned thermal interface material layer is that the pottery of high thermal conductivity coefficient or metal oxide powder are scattered in the polymeric matrix, when temperature raises, the thermal interface material layer is by the solid-state semisolid of softening into, and the out-of-flatness surface between heater members and the radiating fin filled up, the heat that heater members is produced can be conducted by efficient.
Yet, above-mentionedly being scattered in the thermal interface material layer of polymeric matrix based on pottery or metal oxide powder, its heat-conductive characteristic is still not enough.Therefore, still need radiator structure of a kind of improvement and preparation method thereof at present, to solve semi-conductor industry for the demand of heat radiation.
Summary of the invention
Purpose of the present invention is providing radiator structure of a kind of improvement and preparation method thereof, to satisfy above-mentioned semi-conductor industry for the demand of heat radiation.
The invention discloses a kind of manufacture method of radiator structure, it is characterized in that, comprise: a heat-radiating substrate is provided; One side in this heat-radiating substrate forms diamond grains or film; Coating one emulsion polymer layer constitutes a radiating element on this diamond grains or film; And this radiating element and a heater members combined.Because the molecular structure of diamond itself is carbon carbon bond, have good chemical affinity and associativity with organic polymer structures such as emulsion polymers, so after coating, also be combined into one, and at room temperature be a solid film, can not produce the air gap or fit problem such as not fine and close.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiments cited below particularly, and cooperate appended graphicly, elaborate.Yet following preferred embodiments and graphic only for reference and explanation usefulness are limited the present invention.
Description of drawings
Fig. 1 to Fig. 3 illustration one embodiment of the present invention.
Wherein, description of reference numerals is as follows:
10 heater members
20 radiating elements
21 heat-radiating substrates
22 diamond grains
24 emulsion polymer layers
40 radiator structures
100 printed substrates
Embodiment
Fig. 1 to Fig. 3 illustration one embodiment of the present invention.As shown in Figure 1, provide a heat-radiating substrate 21 earlier, wherein, heat-radiating substrate 21 can be the substrate that a metal substrate or surface have ceramic plated layer, after chemical treatment, obtains the surface of a cleaning.Then, place chemical gaseous phase Shen to amass (chemical vapor deposition heat-radiating substrate 21, CVD) in the equipment, with heat-radiating substrate 21 heating, utilize hydrogen (H2) to reduce earlier and remove oxide, the recycling argon gas forms the surface of electricity slurry bombardment heat-radiating substrate 21, and its effective surface area is increased.
According to the preferred embodiment of the present invention, can utilize the strength of interlocking (interlock) to increase the long-pending adhesion of thin film in Shen.Then, heat-radiating substrate 21 is heated to reaction temperature, for example 500～1200 ℃, and feed methane (CH4) and hydrogen, chemical reaction by cracking, carbon atom Shen is amassed on the surface of heat-radiating substrate 21, and carbon atom arrangement becomes tridimensional network, forms diamond grains 22, also can be by the control reaction speed, increase the rate of deposition of carbon atom, make growth direction be planar, to form a diamond film.When slowing down the carbon atom rate of deposition, namely form diamond grains 22.Diamond has splendid heat conductivity, and possesses high rigidity, grows up in the surface of heat-radiating substrate 21 by the synthetic reaction that chemical gaseous phase Shen is long-pending, and by adjusting response parameter, the size of its growth can how rice be to time micron (sub-micron) between tens of.Also can utilize crystal method of heap of stone to form diamond grains 22 or film in addition.
As shown in Figure 2, after finishing the long-pending step in CVD Shen, the surface that is coated on heat-radiating substrate 21 that diamond grains 22 (or film) is even and fine and close, then on the surface of heat-radiating substrate 21, evenly be coated with an emulsion polymer (letax polymer) layer 24 or giant molecule film in spraying (spreading) mode, as heat-radiating substrate 21 and the interface of other device applying with buffering.Diamond grains 22, the emulsion polymer layer behind overcuring 24 constitute a radiating element 20 with heat-radiating substrate 21.Because the molecular structure of diamond itself is carbon carbon bond, have good chemical affinity and associativity with organic polymer structures such as emulsion polymers, so after coating, also be combined into one, and at room temperature be a solid film, can not produce the air gap or fit problem such as not fine and close.
As shown in Figure 3, radiating element 20 is provided with one of diamond grains 22 and emulsion polymer layer 24 faces down, with a heater members 10, for example semiconductor integrated device combines, and namely constitutes radiator structure 40 of the present invention, wherein, heater members 10 can be positioned on the printed substrate 100.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210074799XA CN103325689A (en) | 2012-03-20 | 2012-03-20 | Manufacturing method of heat dissipation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210074799XA CN103325689A (en) | 2012-03-20 | 2012-03-20 | Manufacturing method of heat dissipation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103325689A true CN103325689A (en) | 2013-09-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210074799XA Pending CN103325689A (en) | 2012-03-20 | 2012-03-20 | Manufacturing method of heat dissipation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103325689A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010003377A1 (en) * | 1998-07-28 | 2001-06-14 | Myoung Ki Yoo | Heat sink for a semiconductor device |
| US20040238946A1 (en) * | 2002-11-07 | 2004-12-02 | Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Heat spreader and semiconductor device and package using the same |
| US20060113546A1 (en) * | 2002-10-11 | 2006-06-01 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
-
2012
- 2012-03-20 CN CN201210074799XA patent/CN103325689A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010003377A1 (en) * | 1998-07-28 | 2001-06-14 | Myoung Ki Yoo | Heat sink for a semiconductor device |
| US20060113546A1 (en) * | 2002-10-11 | 2006-06-01 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
| US20040238946A1 (en) * | 2002-11-07 | 2004-12-02 | Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Heat spreader and semiconductor device and package using the same |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130925 |