CN103311399B - LED lighting device - Google Patents
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- CN103311399B CN103311399B CN201210068038.3A CN201210068038A CN103311399B CN 103311399 B CN103311399 B CN 103311399B CN 201210068038 A CN201210068038 A CN 201210068038A CN 103311399 B CN103311399 B CN 103311399B
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Abstract
Description
技术领域technical field
本发明设计一种发光装置,尤其是一种LED发光装置。The invention designs a light emitting device, especially an LED light emitting device.
背景技术Background technique
如图1所示,现有技术中,通常将传统的光源11(如白炽灯)设置于灯具的弧状反射杯12的焦点位置处,并在该反射杯12的内表面涂有一层荧光粉层13。光源11所发出的光经过荧光粉层13的转换,混合出不同的颜色。LED(Light-Emitting Diode,发光二极管)作为新兴的光源,未来将逐步取代传统的光源。然而,由于LED的指向性较高,在上述灯具中若使用LED取代上述光源11,则会因为光源11的正向发光强度远大于其侧向发光强度,导致只有少数荧光粉层被激发,大部分光线将直接出射,从而造成出光的颜色不均匀的问题。As shown in Figure 1, in the prior art, a traditional light source 11 (such as an incandescent lamp) is usually arranged at the focal point of an arc-shaped reflective cup 12 of a lamp, and a layer of phosphor layer is coated on the inner surface of the reflective cup 12 13. The light emitted by the light source 11 is converted by the phosphor layer 13 to mix different colors. As an emerging light source, LED (Light-Emitting Diode) will gradually replace traditional light sources in the future. However, due to the high directivity of LEDs, if LEDs are used to replace the above-mentioned light source 11 in the above-mentioned lamps, because the forward luminous intensity of the light source 11 is much greater than its lateral luminous intensity, only a few phosphor layers are excited, and the Part of the light will be emitted directly, causing the problem of uneven color of the emitted light.
发明内容Contents of the invention
有鉴于此,有必要提供一种出光颜色均匀的LED发光装置。In view of this, it is necessary to provide an LED lighting device with uniform light emission color.
一种LED发光装置,包括LED芯片、反射杯及荧光粉层,该LED发光装置还包括反射层,该反射层遮挡该LED芯片的正向出光面,该反射杯环绕该LED芯片与该反射层,该荧光粉层涂布在该反射杯的内表面,该反射层将LED芯片正向发射的光线朝侧向反射至荧光粉层,沿该反射杯的轴向,该荧光粉层在反射杯内表面不同位置处的厚度不相等,该荧光粉层对应于该反射层外周缘的位置处形成一厚度最大的凸起,该荧光粉层的厚度自该凸起朝向反射杯的底部以及顶部逐渐变薄。An LED light-emitting device, including an LED chip, a reflective cup and a phosphor layer, the LED light-emitting device also includes a reflective layer, the reflective layer blocks the forward light-emitting surface of the LED chip, and the reflective cup surrounds the LED chip and the reflective layer , the phosphor layer is coated on the inner surface of the reflective cup, and the reflective layer reflects the light emitted by the LED chip in the side direction to the phosphor layer. Along the axial direction of the reflective cup, the phosphor layer The thicknesses at different positions on the inner surface are not equal, and the position of the phosphor layer corresponding to the outer periphery of the reflective layer forms a protrusion with the largest thickness, and the thickness of the phosphor layer gradually increases from the protrusion towards the bottom and top of the reflective cup. Thinned.
LED芯片发出的光线通过反射层分散到LED芯片的侧向出射,从而激发分布于LED芯片侧向的荧光粉层。该荧光粉层与从该LED芯片的侧向出射的光混合后,经由反射杯反射直至从反射杯的开口出射。由于经由反射层将LED芯片发射的光线改变至布有荧光粉层的方向,则荧光粉层可以较好地被激发并混合,可有效改善出光颜色不均匀的问题。The light emitted by the LED chip is dispersed to the side exit of the LED chip through the reflective layer, thereby exciting the phosphor layer distributed on the side of the LED chip. After the phosphor layer is mixed with the light emitted from the side of the LED chip, it is reflected by the reflection cup until it exits from the opening of the reflection cup. Since the light emitted by the LED chip is changed to the direction where the phosphor layer is distributed through the reflective layer, the phosphor layer can be better excited and mixed, which can effectively improve the problem of uneven light color.
附图说明Description of drawings
图1是现有灯具的示意图。Fig. 1 is a schematic diagram of an existing lamp.
图2是本发明第一实施例的的LED发光装置的示意图。Fig. 2 is a schematic diagram of the LED lighting device according to the first embodiment of the present invention.
图3是图2的LED发光装置的部分放大图。FIG. 3 is a partial enlarged view of the LED lighting device of FIG. 2 .
图4是本发明第二实施例的的LED发光装置的示意图。Fig. 4 is a schematic diagram of an LED lighting device according to a second embodiment of the present invention.
主要元件符号说明Explanation of main component symbols
如下具体实施方式将结合上述附图进一步说明本发明。The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.
具体实施方式Detailed ways
下面结合附图对本发明作进一步的详细说明。The present invention will be further described in detail below in conjunction with the accompanying drawings.
请同时参阅图2-3,示出了本发明的第一实施例的LED发光装置100。该发光装置100包括具有荧光粉层21的LED反射杯20以及搭配使用的LED芯片40及透镜30。Please also refer to FIGS. 2-3 , which show an LED lighting device 100 according to a first embodiment of the present invention. The light emitting device 100 includes an LED reflective cup 20 with a phosphor layer 21 , an LED chip 40 and a lens 30 used together.
该LED芯片40包括二彼此绝缘的电极41、42,该两电极41、42从该LED芯片40的下表面向下延伸。该LED芯片40通过共晶、连接导电线、倒装之其中一种方式通过该二电极41、42与一基板43连接。该透镜30覆盖于该LED芯片40上,并包覆LED芯片40的上表面及侧面,该LED芯片40的出光面朝向透镜30正上方。该透镜30包括一弧状凹面,该弧状凹面从透镜30的下表面的中心位置处向其上表面凹陷,形成一位于透镜30中心的、下端开口的空穴31。该空穴31的截面大致呈一半椭圆形,其长轴方向与透镜30的竖直方向平行,其短轴长度不大于该LED芯片40的宽度。该透镜30的侧面包含多个微结构32。该多个微结构32使该透镜30的侧面粗糙化。在本实施例中,该多个微结构32为多个向透镜30内部凹陷的环状微结构32,其切面呈锯齿状。该透镜30上表面为一上凸的弧面33,该弧面33在透镜30的中部的曲率小于靠近透镜30侧面的曲率。弧面33与透镜30的侧面的微结构32相接。该弧面33的中心位置处覆盖一反射层34,该反射层34为朝向空穴31的方向上镀的一层高反射率的镀膜。该反射层34尺寸较LED芯片40的宽度略大,且遮挡该透镜30的正向发光位置。进一步的,该反射层34由高反射率的金属制成。The LED chip 40 includes two electrodes 41 , 42 insulated from each other, and the two electrodes 41 , 42 extend downward from the lower surface of the LED chip 40 . The LED chip 40 is connected to a substrate 43 through the two electrodes 41 , 42 through one of methods of eutectic, conductive wire connection, and flip-chip. The lens 30 covers the LED chip 40 and covers the upper surface and side surfaces of the LED chip 40 . The light emitting surface of the LED chip 40 faces directly above the lens 30 . The lens 30 includes an arc-shaped concave surface, which is recessed from the center of the lower surface of the lens 30 to the upper surface thereof, forming a cavity 31 at the center of the lens 30 with an open lower end. The cross-section of the cavity 31 is approximately semi-elliptical, its long axis is parallel to the vertical direction of the lens 30 , and its short axis is not larger than the width of the LED chip 40 . The side surface of the lens 30 includes a plurality of microstructures 32 . The plurality of microstructures 32 roughen the sides of the lens 30 . In this embodiment, the plurality of microstructures 32 are a plurality of ring-shaped microstructures 32 that are recessed toward the inside of the lens 30 , and their cross-sections are saw-toothed. The upper surface of the lens 30 is an upward convex arc surface 33 , and the curvature of the arc surface 33 in the middle of the lens 30 is smaller than that near the side of the lens 30 . The arc surface 33 is in contact with the microstructure 32 on the side of the lens 30 . The center of the curved surface 33 is covered with a reflective layer 34 , and the reflective layer 34 is a layer of high-reflectivity coating film on the direction toward the hole 31 . The size of the reflective layer 34 is slightly larger than the width of the LED chip 40 and blocks the forward light emitting position of the lens 30 . Further, the reflective layer 34 is made of metal with high reflectivity.
该LED芯片40通过该两电极41、42接通电源后对外发光,其光线主要从其出光面,也即是上表面射出。由于光线从LED芯片40的出光面出射后,先经过空穴31再进入透镜30,则光线再该空穴31与透镜30的界面产生折射,光线向透镜30的侧面弯折。位于透镜30正上方的反射层34由于遮挡整个LED芯片40的正上方,故即使有部分光线不能通过空穴31与透镜30的界面折射弯折向透镜30的侧面,也可通过反射层34的反射使光线发生弯折,使得从LED芯片40产生的绝大部分光线均从透镜30的侧面射出,透镜30无正向光穿透。又由于该透镜30的侧面具有多个微结构32粗糙化其侧面,则光线从透镜30的侧面出射时不容易发生全反射。The LED chip 40 emits light after being powered on through the two electrodes 41 and 42 , and the light is mainly emitted from the light emitting surface, that is, the upper surface. After the light exits from the light emitting surface of the LED chip 40 , it first passes through the cavity 31 and then enters the lens 30 , the light is refracted at the interface between the cavity 31 and the lens 30 , and the light is bent toward the side of the lens 30 . The reflective layer 34 located directly above the lens 30 blocks the entire LED chip 40 directly above, so even if some light cannot pass through the interface refraction between the hole 31 and the lens 30 and bend to the side of the lens 30, it can still pass through the surface of the reflective layer 34. The reflection bends the light, so that most of the light generated from the LED chip 40 is emitted from the side of the lens 30 , and no forward light passes through the lens 30 . Furthermore, since the side surface of the lens 30 has a plurality of microstructures 32 to roughen the side surface, total reflection is not likely to occur when the light exits from the side surface of the lens 30 .
请再参阅图2,设置一反射杯20环绕该透镜30。该透镜30以及该LED芯片40位于该反射杯20内部的底端位置。该反射杯20的侧壁从该透镜30的下表面略微倾斜向上延伸出一杯形环绕该透镜30。该LED芯片40的两电极41、42从反射杯20的底端伸出以连接基板43。该反射杯20内壁面涂有荧光粉层21,该荧光粉层21环设在反射杯20内表面且不同位置处的厚度不相等。该荧光粉层21主要分布于反射杯20对应LED芯片40侧面的位置处,在本实施例中即对应透镜30侧面的位置处。其中,该荧光粉层21对应该透镜30的弧面33与透镜30的侧面的多个微结构32的连接位置处形成一厚度最大的凸起211。该荧光粉层21的厚度自该凸起211向反射杯20的底部以及顶部延伸并逐渐变薄。该凸起211的高度低于透镜30的空穴31的最高点的高度。其中,该荧光粉层21向反射杯20的底部延伸至该反射杯20的底部,向反射杯20的顶部延伸至反射杯20大致对应透镜30的反射层34的最低高度位置处,即该荧光粉层21在该反射杯20轴向上的高度与该反射层34在此方向上的高度相当。Referring to FIG. 2 again, a reflective cup 20 is provided to surround the lens 30 . The lens 30 and the LED chip 40 are located at the bottom of the reflection cup 20 . The sidewall of the reflective cup 20 extends slightly obliquely upward from the lower surface of the lens 30 to surround the lens 30 in a cup shape. Two electrodes 41 , 42 of the LED chip 40 protrude from the bottom of the reflective cup 20 to connect to the substrate 43 . The inner wall of the reflective cup 20 is coated with a phosphor layer 21 , and the phosphor layer 21 is arranged around the inner surface of the reflective cup 20 and has different thicknesses at different positions. The phosphor layer 21 is mainly distributed at the position of the reflective cup 20 corresponding to the side of the LED chip 40 , that is, the position corresponding to the side of the lens 30 in this embodiment. Wherein, the phosphor layer 21 forms a protrusion 211 with the largest thickness at the connection position corresponding to the curved surface 33 of the lens 30 and the plurality of microstructures 32 on the side of the lens 30 . The thickness of the phosphor layer 21 extends from the protrusion 211 to the bottom and the top of the reflective cup 20 and gradually becomes thinner. The height of the protrusion 211 is lower than the height of the highest point of the cavity 31 of the lens 30 . Wherein, the phosphor layer 21 extends to the bottom of the reflective cup 20 to the bottom of the reflective cup 20, extends to the top of the reflective cup 20 to the lowest height position of the reflective layer 34 of the reflective cup 20 roughly corresponding to the lens 30, that is, the phosphor The height of the powder layer 21 in the axial direction of the reflective cup 20 is equivalent to the height of the reflective layer 34 in this direction.
当二电极41、42通过基板43与外界电源通电时,LED芯片40发光,其光线通过透镜30分散到透镜30的侧面出光,从而激发分布于透镜30侧面附近的荧光粉层21。经过透镜30出射的一部分光线经由该荧光粉层21转换而改变颜色,另一部分光线在经过荧光粉层21之后未与荧光粉层21发生作用而直接被反射杯20反射。通过荧光粉层21转换颜色的光线与未经荧光粉层21转换的光线混合后,经由反射杯20的开口出射。由于经由透镜30将LED芯片40发射的光线改变至布有荧光粉层21的方向,则荧光粉层21可以较好地被激发并混合,可有效改善出光颜色不均匀的问题。并且在出光最强的位置处(即透镜30的弧面33与布有多个微结构32的侧面的连接位置处)该荧光粉层21的涂布具有最大厚度,则可进一步提升激发效率及出光亮度。再且,该荧光粉层21在该反射杯20轴向上的高度与该反射层34在此方向上的高度相当,也即只是能有光线直接照射的部分涂布荧光粉层21,则可节省荧光粉层21。When the two electrodes 41 and 42 are energized with the external power supply through the substrate 43, the LED chip 40 emits light, and the light is dispersed to the side of the lens 30 through the lens 30 to emit light, thereby exciting the phosphor layer 21 distributed near the side of the lens 30. Part of the light emitted through the lens 30 is converted by the phosphor layer 21 to change color, and the other part of the light is directly reflected by the reflective cup 20 without interacting with the phosphor layer 21 after passing through the phosphor layer 21 . The light converted in color by the phosphor layer 21 is mixed with the light not converted by the phosphor layer 21 , and exits through the opening of the reflective cup 20 . Since the light emitted by the LED chip 40 is changed to the direction where the phosphor layer 21 is distributed through the lens 30, the phosphor layer 21 can be better excited and mixed, which can effectively improve the problem of uneven color of the emitted light. And at the position where the light is the strongest (that is, at the connection position between the curved surface 33 of the lens 30 and the side surface with a plurality of microstructures 32), the coating of the phosphor layer 21 has the maximum thickness, which can further improve the excitation efficiency and Brightness of light. Moreover, the height of the fluorescent powder layer 21 in the axial direction of the reflective cup 20 is equivalent to the height of the reflective layer 34 in this direction, that is, only the part that can be directly irradiated by light is coated with the fluorescent powder layer 21, then it can be The phosphor layer 21 is saved.
请再参阅图4,示出了示出了本发明的第二实施例的LED发光装置200。本实施例与第一实施例的区别在于,该LED发光装置200不包含透镜30。另,该反射层34a的切面呈一驼峰形起伏,其包括两个波峰,两个波峰最中间的波谷位于LED芯片40的正向光轴上。由于LED芯片40的正向出光较强,反射层34a的波谷位于LED芯片40的正向光轴上的设计,可有效避免在该光轴上可能出现的垂直光线照射然后垂直反射的来回反射问题。当然,该反射层34a也可包括其他偶数个波峰,这些波峰最中间的波谷位于LED芯片40的正向光轴上。该反射层34a在该反射杯20轴向上的高度与该荧光粉层21在此方向上的高度相当。该反射层34a通过支架(图未示)或其他连接方式固定于LED芯片40的正上方。该反射层34a遮挡LED芯片40的正向出光面,并将由该LED芯片40正向出射的光线向侧向反射,从而激发分布于反射杯20对应该LED芯片40侧面的位置处的荧光粉层21。激发荧光粉层21发出的光线与原来LED芯片40射出的光线混合后,经由反射杯20反射向反射杯20的开口出射。该实施例的LED发光装置200可同样有效改善出光颜色不均匀的问题。Please refer to FIG. 4 again, which shows an LED lighting device 200 according to a second embodiment of the present invention. The difference between this embodiment and the first embodiment is that the LED lighting device 200 does not include a lens 30 . In addition, the cross section of the reflective layer 34 a has a hump-shaped undulation, which includes two peaks, and the trough in the middle of the two peaks is located on the forward optical axis of the LED chip 40 . Since the forward light output of the LED chip 40 is strong, the design of the trough of the reflective layer 34a located on the forward optical axis of the LED chip 40 can effectively avoid the back and forth reflection problem of vertical light irradiation and vertical reflection that may occur on the optical axis . Of course, the reflective layer 34 a may also include other even-numbered peaks, and the middle trough of these peaks is located on the forward optical axis of the LED chip 40 . The height of the reflective layer 34a in the axial direction of the reflective cup 20 is equivalent to the height of the phosphor layer 21 in this direction. The reflective layer 34a is fixed directly above the LED chip 40 through a bracket (not shown) or other connection means. The reflective layer 34a blocks the forward light-emitting surface of the LED chip 40, and reflects the light emitted by the LED chip 40 to the side, thereby exciting the phosphor layer distributed at the position of the reflective cup 20 corresponding to the side of the LED chip 40. twenty one. The light emitted by the excited phosphor layer 21 is mixed with the original light emitted by the LED chip 40 , and then reflected by the reflective cup 20 and emitted to the opening of the reflective cup 20 . The LED lighting device 200 of this embodiment can also effectively improve the problem of uneven color of emitted light.
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TWI447328B (en) | 2014-08-01 |
TW201337167A (en) | 2013-09-16 |
CN103311399A (en) | 2013-09-18 |
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