CN103311369B - A kind of crystal-silicon solar cell production technology - Google Patents
A kind of crystal-silicon solar cell production technology Download PDFInfo
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- CN103311369B CN103311369B CN201310235300.3A CN201310235300A CN103311369B CN 103311369 B CN103311369 B CN 103311369B CN 201310235300 A CN201310235300 A CN 201310235300A CN 103311369 B CN103311369 B CN 103311369B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 238000005516 engineering process Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 20
- 235000008216 herbs Nutrition 0.000 claims abstract description 18
- 210000002268 wool Anatomy 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 17
- 238000007650 screen-printing Methods 0.000 claims abstract description 17
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 9
- 230000002000 scavenging effect Effects 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 8
- 238000010306 acid treatment Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 41
- 239000000243 solution Substances 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000003892 spreading Methods 0.000 description 13
- 239000011259 mixed solution Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of solar cell production technology, more specifically a kind of crystal-silicon solar cell production technology, it comprises the steps: making herbs into wool, spreads, removes phosphorosilicate glass, PECVD deposited silicon nitride, the cleaning of silicon chip acid solution, drying, silk screen printing, sintering and go-on-go, the invention has the beneficial effects as follows: use acid treatment to have the silicon chip of silicon nitride not only can remove the oxide layer at the back side, the beneficially back surface reflection to long wave sunlight further；And tiny rough surface, beneficially sunlight can be formed in the absorption to shortwave of the battery front surface in the front surface silicon nitride surface of silicon chip.So can increase the solar cell absorption at whole sunlight wave band, reach to improve the effect of short circuit current, and acid treatment equipment of the present invention is ripe, with low cost, simple to operate.
Description
Technical field
The present invention relates to a kind of solar cell production technology, more specifically a kind of crystal-silicon solar cell production technology.
Background technology
Solar cell is that the sunlight absorbed is carried out generating electricity through the opto-electronic conversion of semi-conducting material, and how promoting solar cell is one of key factor improving conversion efficiency to the absorption of sunlight.Traditional solar cell is to make its sensitive surface form matte micron/submicron structure by acid/base process for etching, reaches to increase the purpose that sunlight is incident.It has recently been demonstrated that nanostructured can be reached by being carried out the etching of more fine texture in the micron/submicron structure of suede structure by various methods, can significantly increase the absorption of sunlight.Such as carry out reactive ion etching (Reactive Ion Etching, RIE) on the silicon chip after making herbs into wool, the efficiency about 0.5% of solar cell can be improved.But this method equipment investment is higher, and equipment capacity is the most limited, is unfavorable for the mass production of this technology.
The aluminum back surface field of solar cell can be with reflecting part sunlight after solar cell, the sunlight making this part long wavelength can be absorbed by solar cell again, but absorbing this part of light the most to a greater extent is also a pendulum difficult problem in face of solar cell worker.General method be by wire mark aluminum back surface field before silicon chip carry out polished backside at aqueous slkali, not only can improve the wire mark effect of aluminum back surface field, it is also possible to improve the solar cell absorption to the long glistening light of waves.
The process route of conventional crystalline silicon solar cell includes: Incoming Quality Control, making herbs into wool, diffusion, and phosphorosilicate glass is removed, silicon nitride plated film, silk screen printing, sintering and go-on-go technique.Both the above method is to be respectively increased the sunlight absorption of solar cell front and back by different technique, but the sunlight that both of which can not improve solar cell front and back absorbs simultaneously, and use both the above method to be required for increasing high cost equipment, increase cost.
Summary of the invention
For above not enough, the invention provides a kind of method equipment ripe, with low cost, easily operated crystal silicon solar energy battery production technology, this technique carries out acid solution cleaning to the silicon chip containing silicon nitride after PECVD deposited silicon nitride, remove the reflection to long wave sunlight of the oxide layer at the back side, beneficially back surface the most further；And tiny rough surface, beneficially sunlight can be formed in the absorption to shortwave of the battery front surface in the front surface silicon nitride surface of silicon chip.So can increase the solar cell absorption at whole sunlight wave band, reach to improve the effect of short circuit current.
The present invention is achieved by the following technical solutions: a kind of crystal-silicon solar cell production technology, comprises the steps: making herbs into wool, spreads, removes phosphorosilicate glass, PECVD deposited silicon nitride, the cleaning of silicon chip acid solution, drying, silk screen printing, sintering and go-on-go.
It is HF solution and HCl solution that above-mentioned silicon chip acid solution cleans, and not only can remove the oxide layer at the back side further, the beneficially back surface reflection to long wave sunlight；And tiny rough surface, beneficially sunlight can be formed in the absorption to shortwave of the battery front surface in the front surface silicon nitride surface of silicon chip.So can increase the solar cell absorption at whole sunlight wave band, reach to improve the effect of short circuit current.
One of above-mentioned silicon chip acid solution cleaning way is to be carried out in the mixed liquor that the silicon chip having silicon nitride is put into HF and HCl.
The concentration of above-mentioned HF be the concentration of 0.1%-80%, HCl be 2%-50%, temperature 10-20 DEG C, 10-1000 seconds time.
Optimizing, the concentration of above-mentioned HF is 15%, and the concentration of HCl is 2%, temperature 15 DEG C, 300 seconds time.
Another mode that above-mentioned silicon chip acid solution cleans is successively successively through the solution cleaning of HF and HCl.
The concentration of above-mentioned HF is 0.1%-80%, temperature 10-20 DEG C, 10-1000 seconds time.
The concentration of above-mentioned HCl is 2%-50%, temperature 10-20 DEG C, 10-1000 seconds time.
Optimizing, the concentration of above-mentioned HF is 5%, temperature 15 DEG C, 600 seconds time；The concentration of HCl is 2%, temperature 18 DEG C, 200 seconds time.
PECVD: be made by microwave or radio frequency etc. and make the gas ionization containing thin film composed atom, is being partially formed plasma, and plasma chemistry activity is the strongest, it is easy to reacting, go out desired thin film at deposition on substrate.In order to make chemical reaction to carry out at a lower temperature, make use of the activity of plasma to promote reaction, thus this CVD is referred to as plasma enhanced chemical vapor deposition (PECVD).
The invention has the beneficial effects as follows: use acid treatment to have the silicon chip of silicon nitride not only can remove the oxide layer at the back side, the beneficially back surface reflection to long wave sunlight further；And tiny rough surface, beneficially sunlight can be formed in the absorption to shortwave of the battery front surface in the front surface silicon nitride surface of silicon chip.So can increase the solar cell absorption at whole sunlight wave band, the highest higher than the absorbance of traditional handicraft by 7%, reach to improve the effect of short circuit current, and acid treatment equipment of the present invention is ripe, with low cost, simple to operate.
Accompanying drawing explanation
Sunlight is reflected comparison diagram by the solar cell that Fig. 1 is embodiment 1 and prepared by traditional processing technology；
Fig. 2 is the efficiency distribution figure of the solar cell that embodiment 1 produces；
Fig. 3 is the efficiency distribution figure of conventionally produced solar cell；
In figure: the reflectance of the solar cell that 1-is conventionally produced, the solar cell reflectance that 2-present invention process produces.
Detailed description of the invention
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings, in order to those skilled in the art can be better understood by the present invention, but and is not so limited the present invention.
Embodiment 1
After polysilicon silicon chip carries out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, then being taken up in order of priority by the silicon chip having silicon nitride and be placed in HF and HCl solution cleaning, the concentration of HF is 5%, temperature 15 DEG C, 600 seconds time；The concentration of HCl is 2%, temperature 18 DEG C, 200 seconds time, carries out silicon chip afterwards drying, silk screen printing, sintering and go-on-go, completes the making of the whole technique of solar cell, and the solar cell reflectance that this technique makes is shown in that Fig. 1, efficiency distribution figure are shown in Fig. 2.
Embodiment 2
After polysilicon silicon chip carries out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, then being taken up in order of priority by the silicon chip having silicon nitride and be placed in HCl and HF solution cleaning, the concentration of HCl is 2%, temperature 18 DEG C, 200 seconds time；The concentration of HF is 5%, temperature 15 DEG C, 600 seconds time, carry out silicon chip afterwards drying, silk screen printing, sintering and go-on-go, complete the making of the whole technique of solar cell, the solar cell reflectance height 2.5-3.5% that the solar cell reflectance that this technique makes is prepared in each wavelength ratio method as described in embodiment 1.
Embodiment 3
After polysilicon silicon chip carries out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, then being taken up in order of priority by the silicon chip having silicon nitride and be placed in HF and HCl solution cleaning, the concentration of HF is 0.1%, temperature 15 DEG C, 1000 seconds time；The concentration of HCl is 2%, temperature 18 DEG C, 200 seconds time, carries out silicon chip drying, silk screen printing, sintering and go-on-go afterwards, completing the making of the whole technique of solar cell, the solar cell that the solar cell reflectance that this technique makes is prepared in each wavelength ratio method as described in embodiment 1 is high by about 2%.
Embodiment 4
After polysilicon silicon chip carries out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, then being taken up in order of priority by the silicon chip having silicon nitride and be placed in HF and HCl solution cleaning, the concentration of HF is 80%, temperature 15 DEG C, 30 seconds time；The concentration of HCl is 2%, temperature 18 DEG C, 200 seconds time, carry out silicon chip afterwards drying, silk screen printing, sintering and go-on-go, completing the making of the whole technique of solar cell, the solar cell that the solar cell reflectance that this technique makes is prepared in each wavelength ratio method as described in embodiment 1 is low high by about 2%.
Embodiment 5
After polysilicon silicon chip carries out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, then being taken up in order of priority by the silicon chip having silicon nitride and be placed in HF and HCl solution cleaning, the concentration of HF is 5%, temperature 15 DEG C, 600 seconds time；The concentration of HCl is 10%, temperature 18 DEG C, 100 seconds time, carry out silicon chip afterwards drying, silk screen printing, sintering and go-on-go, completing the making of the whole technique of solar cell, the solar cell that the solar cell reflectance that this technique makes is prepared in each wavelength ratio method as described in embodiment 1 is high by about 1.5%.
Embodiment 6
After polysilicon silicon chip carries out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, then being taken up in order of priority by the silicon chip having silicon nitride and be placed in HF and HCl solution cleaning, the concentration of HF is 5%, temperature 15 DEG C, 600 seconds time；The concentration of HCl is 50%, temperature 18 DEG C, 20 seconds time, carries out silicon chip drying, silk screen printing, sintering and go-on-go afterwards, completing the making of the whole technique of solar cell, the solar cell that the solar cell reflectance that this technique makes is prepared in each wavelength ratio method as described in embodiment 1 is high by about 1%.
Embodiment 7
After polysilicon silicon chip is carried out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, the silicon chip having silicon nitride is placed in HF and HCl solution mixed solution cleaning again, the concentration of described HF is 15%, the concentration of HCl is 2%, temperature 15 DEG C, 300 seconds time, carries out silicon chip drying, silk screen printing, sintering and go-on-go afterwards, completing the making of the whole technique of solar cell, the solar cell reflectance made in the solar cell luminance factor embodiment 1 that this technique makes is high by about 0.5%.
Embodiment 8
After polysilicon silicon chip is carried out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, the silicon chip having silicon nitride is placed in HF and HCl solution mixed solution cleaning again, the concentration of described HF is 0.1%, the concentration of HCl is 2%, temperature 15 DEG C, 300 seconds time, carries out silicon chip drying, silk screen printing, sintering and go-on-go afterwards, completing the making of the whole technique of solar cell, the solar cell reflectance made in the solar cell luminance factor embodiment 1 that this technique makes is high by about 2%.
Embodiment 9
After polysilicon silicon chip is carried out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, the silicon chip having silicon nitride is placed in HF and HCl solution mixed solution cleaning again, the concentration of described HF is 80%, the concentration of HCl is 2%, temperature 15 DEG C, 300 seconds time, carries out silicon chip drying, silk screen printing, sintering and go-on-go afterwards, completing the making of the whole technique of solar cell, the solar cell reflectance made in the solar cell luminance factor embodiment 1 that this technique makes is high by about 2%.
Embodiment 10
After polysilicon silicon chip is carried out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, the silicon chip having silicon nitride is placed in HF and HCl solution mixed solution cleaning again, the concentration of described HF is 15%, the concentration of HCl is 50%, temperature 15 DEG C, 300 seconds time, carries out silicon chip drying, silk screen printing, sintering and go-on-go afterwards, completing the making of the whole technique of solar cell, the solar cell reflectance made in the solar cell luminance factor embodiment 1 that this technique makes is high by about 2%.
Embodiment 11
After polysilicon silicon chip is carried out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, the silicon chip having silicon nitride is placed in HF and HCl solution mixed solution cleaning again, the concentration of described HF is 15%, the concentration of HCl is 20%, temperature 15 DEG C, 300 seconds time, carries out silicon chip drying, silk screen printing, sintering and go-on-go afterwards, completing the making of the whole technique of solar cell, the solar cell reflectance made in the solar cell luminance factor embodiment 1 that this technique makes is high by about 0.6%.
Embodiment 12
After polysilicon silicon chip is carried out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, it is in 0.1%-80%HF that the silicon chip having silicon nitride is placed on concentration again, temperature 15 DEG C, 400 seconds time, carry out silicon chip afterwards drying, silk screen printing, sintering and go-on-go, complete the making of the whole technique of solar cell, result shows, when HF concentration is 35%, reflectance is minimum.
Embodiment 13
After polysilicon silicon chip is carried out making herbs into wool, spreading, remove phosphorosilicate glass and PECVD deposited silicon nitride, again the silicon chip having silicon nitride is placed in the HCl that concentration is 2%-50%, temperature 15 DEG C, 400 seconds time, carry out silicon chip afterwards drying, silk screen printing, sintering and go-on-go, complete the making of the whole technique of solar cell, result shows, when HCl concentration is 15%, reflectance is minimum.
According to embodiment 1,7,12 and 13, HF and HCl reaches the concentration of optimum reflectivity after coordinating not be to be used alone at it to reach the concentration of optimum reflectivity, and it is to be issued to optimum in both common effect.
As seen from Figure 1 at short-wave band, using the absorptance of the solar cell of the solar cell absorbance ratio traditional handicraft of this invented technology to be obviously improved, when wavelength 350-450nm, reflectance is the highest reduces by 7%.Using the solar cell improved efficiency more than 0.6% to efficiency of this technique as shown in Figure 2, efficiency stepping is more concentrated.
Claims (1)
1. a crystal-silicon solar cell production technology, comprises the steps: making herbs into wool, spreads, removes phosphorosilicate glass, PECVD deposited silicon nitride, the cleaning of silicon chip acid solution, drying, silk screen printing, sintering and go-on-go；
The step that described silicon chip acid solution cleans is successively successively through the solution cleaning of HF and HCl；
The concentration of described HF is 5%, the temperature of cleaning 15 DEG C, scavenging period 600 seconds；The concentration of HCl is 2%, the temperature of cleaning 18 DEG C, scavenging period 200 seconds.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310235300.3A CN103311369B (en) | 2013-06-14 | 2013-06-14 | A kind of crystal-silicon solar cell production technology |
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| CN201310235300.3A CN103311369B (en) | 2013-06-14 | 2013-06-14 | A kind of crystal-silicon solar cell production technology |
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| CN103311369A CN103311369A (en) | 2013-09-18 |
| CN103311369B true CN103311369B (en) | 2016-08-10 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
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| JP4319006B2 (en) * | 2003-10-23 | 2009-08-26 | シャープ株式会社 | Method for manufacturing solar battery cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
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