CN103281075A - Frequency multiplier and preparation method based on micromechanics cantilever capacitive power sensor - Google Patents
Frequency multiplier and preparation method based on micromechanics cantilever capacitive power sensor Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims abstract description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004642 Polyimide Substances 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 229920001721 polyimide Polymers 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims 5
- 238000009713 electroplating Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 8
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Abstract
本发明公开了一种基于微机械悬臂梁电容式功率传感器的倍频器及制备方法，第一CPW信号线和第二CPW信号线分别作为参考信号和反馈信号的输入端，经过一个二合一功合器连接到第三CPW信号线，第三CPW信号线上方的MEMS悬臂梁和传感电极在MEMS悬臂梁的锚区和传感电极的压焊块之间构成了MEMS悬臂梁电容式功率传感器，MEMS悬臂梁电容式功率传感器中的可变电容用于组成电容三点式压控振荡器，电容三点式压控振荡器的输出信号经过除法器后接入到反馈信号的输入端，从而构成倍频器回路。本发明与传统的倍频器相比，省去了低通滤波器，占用空间小，集成度高，降低了直流损耗，能够进一步节约成本和减小尺寸。
The invention discloses a frequency multiplier based on a micromechanical cantilever beam capacitive power sensor and a preparation method. The first CPW signal line and the second CPW signal line are respectively used as input terminals of a reference signal and a feedback signal, and are passed through a two-in-one The power combiner is connected to the third CPW signal line, and the MEMS cantilever beam and the sensing electrode above the third CPW signal line constitute the capacitive power of the MEMS cantilever beam between the anchor area of the MEMS cantilever beam and the pressure welding block of the sensing electrode. Sensor, the variable capacitor in the MEMS cantilever beam capacitive power sensor is used to form a capacitive three-point voltage-controlled oscillator, and the output signal of the capacitive three-point voltage-controlled oscillator is connected to the input terminal of the feedback signal after a divider to form a frequency multiplication circuit. Compared with the traditional frequency multiplier, the present invention omits the low-pass filter, occupies less space, has high integration, reduces DC loss, and can further save cost and size.
Description
Technical field
The present invention relates to a kind of frequency multiplier and preparation method based on micromachine cantilever beam condenser type power sensor, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
Frequency synthesizer is the device that produces multiple frequency from one or more reference frequencies, is the requisite Key Circuit of contemporary electronic systems.Along with development of science and technology, phase-locked loop becomes an irreplaceable part in the Modern Communication System, is bringing into play important effect by the indirect frequency synthesizer that phase-locked loop constitutes at wireless communication field.Frequency synthesizer has experienced directly synthetic analog frequency synthesizer, phase-locked loop frequency synthesizer, three developing stage of Direct Digital Frequency Synthesizers.At present, the frequency synthesizer that uses in various electronic systems generally adopts phase-locked loop frequency synthesizer, by program numbers control, can obtain different frequencies.Phase-locked loop frequency synthesizer comprises functional units such as phase discriminator, filter, voltage controlled oscillator, controlled divider, by the phase difference between comparator input signal and the voltage controlled oscillator output signal, produce control voltage, adjust the frequency of voltage controlled oscillator, thereby realize with input signal with the frequency homophase, the feedback signal of phase discriminator input is not the output signal of voltage controlled oscillator, but voltage controlled oscillator is through the output signal of divider, this feedback signal is followed the tracks of input signal, realizes the stable clock double frequency function.Traditional frequency multiplier needs phase discriminator and low pass filter simultaneously, and it is bigger to take up room, and integrated level is low, the direct current consume is bigger, in recent years, along with deepening continuously that MEMS cantilever beam condenser type power sensor is studied, make the frequency multiplier based on MEMS cantilever beam condenser type power sensor become possibility.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of frequency multiplier and preparation method based on micromachine cantilever beam condenser type power sensor, solved traditional frequency multiplier and taken up room greatlyyer, integrated level is low, the problem that the direct current consume is bigger.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
Frequency multiplier based on micromachine cantilever beam condenser type power sensor, comprise gallium arsenide substrate, the ground wire, CPW holding wire, the merit that are arranged on the gallium arsenide substrate are closed device and MEMS cantilever beam condenser type power sensor, and external capacitance three-point type voltage controlled oscillator and divider, at axis of symmetry of gallium arsenide substrate definition.
Described ground wire comprises upper side edge ground wire, lower side ground wire and a common ground, described upper side edge ground wire and lower side ground wire are separately positioned on upside and the downside of the axis of symmetry, described common ground is positioned at and claims on the axis, described upper side edge ground wire is connected with common ground by an air bridges, and described lower side ground wire is connected with common ground by an air bridges.
Described merit is closed device and is comprised that symmetry is positioned at two ACPS holding wires and the isolation resistance of axis of symmetry both sides, the input of described two ACPS holding wires is isolated by isolation resistance, the input of described two ACPS holding wires closes the input of device as merit, and the output of device is closed in the output of described two the ACPS holding wires back that links to each other as merit.
Described CPW holding wire comprises a CPW holding wire, the 2nd CPW holding wire and the 3rd CPW holding wire, a described CPW holding wire is positioned at the both sides of the axis of symmetry with the 2nd CPW holding wire symmetry and does not link to each other, described the 3rd CPW holding wire symmetry is positioned on the axis of symmetry, a described CPW holding wire and the 2nd CPW holding wire link to each other with two inputs that merit is closed device respectively, respectively as the input with reference to signal and feedback signal, the air bridges of described connection upper side edge ground wire and common ground is across on a CPW holding wire, the air bridges of described connection lower side ground wire and common ground is across on the 2nd CPW holding wire, described the 3rd CPW holding wire links to each other with the output that merit is closed device, be provided with the terminal build-out resistor between the end of described the 3rd CPW holding wire and the upper side edge ground wire, also be provided with the terminal build-out resistor between the end of described the 3rd CPW holding wire and the lower side ground wire.
The MEMS cantilever beam of described MEMS cantilever beam condenser type power sensor is across above the 3rd CPW holding wire, the stiff end of described MEMS cantilever beam is fixed in the anchor district, the below of described MEMS cantilever beam also is provided with sensing electrode, the microwave signal power that the variable capacitance that described sensing electrode and MEMS cantilever beam are formed comes in order to respond to the transmission of the 3rd CPW holding wire changes, and described sensing electrode links to each other with press welding block by connecting line.
Described anchor district and press welding block link to each other with two inputs of external capacitance three-point type voltage controlled oscillator respectively, the output of described capacitance three-point type voltage controlled oscillator links to each other with the input of divider, is linked into the input of feedback signal behind the output signal frequency division of described divider with the capacitance three-point type voltage controlled oscillator.
Described anchor district is positioned at the outside of upper side edge ground wire/lower side ground wire, and the surface that described upper side edge ground wire/lower side ground wire, the 3rd CPW holding wire and sensing electrode are positioned at MEMS cantilever beam below is provided with the silicon nitride medium layer.
Described press welding block is positioned at the outside of upper side edge ground wire/lower side ground wire, described upper side edge ground wire/lower side ground wire is provided with breach, described connecting line passes breach, and described breach two ends connect by air bridges, and the surface that described connecting line is positioned at the air bridges below is provided with the silicon nitride medium layer.
The surface that a described CPW holding wire and the 2nd CPW holding wire are positioned at the air bridges below is provided with the silicon nitride medium layer.
Above-described frequency multiplier based on micromachine cantilever beam condenser type power sensor, the one CPW holding wire, upper side edge ground wire and common ground have constituted a CPW transmission line, the 2nd CPW holding wire, lower side ground wire and common ground have constituted another CPW transmission line, the 3rd CPW holding wire, lower side ground wire and upper side edge ground wire have constituted the 3rd CPW transmission line, the one CPW holding wire and the 2nd CPW holding wire are respectively as the input with reference to signal and feedback signal, the one CPW holding wire and the 2nd CPW holding wire of two air bridges and its below all constitute building-out capacitor, the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole frequency multiplier higher, it is synthetic with the two paths of signals vector to close device through a two-in-one merit, again composite signal is transferred on the 3rd CPW holding wire, MEMS cantilever beam condenser type power sensor detects the power of the composite signal on the 3rd CPW holding wire then, export variable capacitance at last, the variable capacitance of output directly inserts the capacitance three-point type voltage controlled oscillator, the variable capacitance that MEMS cantilever beam and sensing electrode constitute is used for forming the capacitance three-point type voltage controlled oscillator, the output signal of capacitance three-point type voltage controlled oscillator is through being linked into the input of feedback signal behind the programmable divider, thereby constitute the frequency multiplier loop, realized the frequency multiplier based on micromachine cantilever beam condenser type power sensor.
Preparation method based on the frequency multiplier of micromachine cantilever beam condenser type power sensor may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of GaAs is heavy doping, and its square resistance is 100 Ω～130 Ω;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of ground wire and CPW holding wire, MEMS cantilever beam, press welding block and the connecting line of sensing electrode;
8) anti-carve tantalum nitride, form the terminal build-out resistor that merit is closed isolation resistance and the 3rd CPW holding wire end of device, its resistance value is 25 Ω;
9) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technology
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: keep the silicon nitride on MEMS cantilever beam below the 3rd CPW holding wire and lower side ground wire, sensing electrode and the air bridges below connecting line;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit; The photoetching polyimide sacrificial layer, only keep MEMS cantilever beam and air bridges the below sacrifice layer;
12) evaporation titanium/gold/titanium, its thickness is
Evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, corrosion down payment, press welding block and the connecting line of formation ground wire and CPW holding wire, MEMS cantilever beam, anchor district, air bridges, sensing electrode;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer of MEMS cantilever beam and air bridges below, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries;
19) external capacitor bikini voltage controlled oscillator and divider.
Beneficial effect: the frequency multiplier based on micromachine cantilever beam condenser type power sensor of the present invention not only has novel structure, low-power consumption and is easy to integrated advantage, and compare with traditional frequency multiplier, MEMS cantilever beam condenser type power sensor structure of the present invention can realize the function of phase discriminator and low pass filter simultaneously, saved low pass filter, it is little to take up room, the integrated level height has reduced the direct current loss, can further save cost and reduce size.
Description of drawings
Fig. 1 is schematic diagram of the present invention.
Fig. 2 is A1-A2 profile of the present invention.
Fig. 3 is B1-B2 profile of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explanation.
Shown in Fig. 1,2 and 3: based on the frequency multiplier of micromachine cantilever beam condenser type power sensor, comprise gallium arsenide substrate 1, the ground wire, CPW holding wire, the merit that are arranged on the gallium arsenide substrate 1 are closed device and MEMS cantilever beam condenser type power sensor, and external capacitance three-point type voltage controlled oscillator and divider, at axis of symmetry of gallium arsenide substrate 1 definition.
Described ground wire comprises upper side edge ground wire 21, lower side ground wire 22 and a common ground 23, described upper side edge ground wire 21 and lower side ground wire 22 are separately positioned on upside and the downside of the axis of symmetry, described common ground 23 is positioned at and claims on the axis, described upper side edge ground wire 21 is connected with common ground 23 by an air bridges 10, and described lower side ground wire 22 is connected with common ground 23 by an air bridges 10;
Described merit is closed device and is comprised that symmetry is positioned at two ACPS holding wires 5 and the isolation resistance 4 of axis of symmetry both sides, the input of described two ACPS holding wires 5 is isolated by isolation resistance 4, the input of described two ACPS holding wires 5 closes the input of device as merit, and the output of device is closed in the output of described two ACPS holding wires 5 back that links to each other as merit.
Described CPW holding wire comprises a CPW holding wire 31, the 2nd CPW holding wire 32 and the 3rd CPW holding wire 33, a described CPW holding wire 31 is positioned at the both sides of the axis of symmetry with the 2nd CPW holding wire 32 symmetries and does not link to each other, described the 3rd CPW holding wire 33 symmetries are positioned on the axis of symmetry, a described CPW holding wire 31 and the 2nd CPW holding wire 32 link to each other with two inputs that merit is closed device respectively, respectively as the input with reference to signal and feedback signal, the air bridges 10 of described connection upper side edge ground wire 21 and common ground 23 is across on a CPW holding wire 31, the air bridges 10 of described connection lower side ground wire 22 and common ground 23 is across on the 2nd CPW holding wire 32, described the 3rd CPW holding wire 33 links to each other with the output that merit is closed device, be provided with terminal build-out resistor 6 between the end of described the 3rd CPW holding wire 33 and the upper side edge ground wire 21, also be provided with terminal build-out resistor 6 between the end of described the 3rd CPW holding wire 33 and the lower side ground wire 22.
The MEMS cantilever beam 12 of described MEMS cantilever beam condenser type power sensor is across above the 3rd CPW holding wire 33, the stiff end of described MEMS cantilever beam 12 is fixed in the anchor district 11, the below of described MEMS cantilever beam 12 also is provided with sensing electrode 7, described sensing electrode 7 changes with the microwave signal power that the variable capacitance that MEMS cantilever beam 12 is formed comes in order to respond to 33 transmission of the 3rd CPW holding wire, and described sensing electrode 7 links to each other with press welding block 8 by connecting line 13.
Described anchor district 11 and press welding block 8 link to each other with two inputs of external capacitance three-point type voltage controlled oscillator respectively, the output of described capacitance three-point type voltage controlled oscillator links to each other with the input of divider, is linked into the input of feedback signal behind the output signal frequency division of described divider with the capacitance three-point type voltage controlled oscillator.
Described anchor district 11 is positioned at the outside of upper side edge ground wire 21/ lower side ground wire 22, and the surface that described upper side edge ground wire 21/ lower side ground wire 22, the 3rd CPW holding wire 33 and sensing electrode 7 are positioned at MEMS cantilever beam 12 belows is provided with silicon nitride medium layer 9.
Described press welding block 8 is positioned at the outside of upper side edge ground wire 21/ lower side ground wire 22, described upper side edge ground wire 21/ lower side ground wire 22 is provided with breach, described connecting line 13 passes breach, described breach two ends connect by air bridges 10, and the surface that described connecting line 13 is positioned at air bridges 10 belows is provided with silicon nitride medium layer 9.
The surface that a described CPW holding wire and the 2nd CPW holding wire are positioned at air bridges 10 belows is provided with silicon nitride medium layer 9.
Above-described frequency multiplier based on micromachine cantilever beam condenser type power sensor, the one CPW holding wire, upper side edge ground wire and common ground have constituted a CPW transmission line, the 2nd CPW holding wire, lower side ground wire and common ground have constituted another CPW transmission line, the 3rd CPW holding wire, lower side ground wire and upper side edge ground wire have constituted the 3rd CPW transmission line, the one CPW holding wire and the 2nd CPW holding wire are respectively as the input with reference to signal and feedback signal, the one CPW holding wire and the 2nd CPW holding wire of two air bridges and its below all constitute building-out capacitor, the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole frequency multiplier higher, it is synthetic with the two paths of signals vector to close device through a two-in-one merit, again composite signal is transferred on the 3rd CPW holding wire, MEMS cantilever beam condenser type power sensor detects the power of the composite signal on the 3rd CPW holding wire then, export variable capacitance at last, the variable capacitance of output directly inserts the capacitance three-point type voltage controlled oscillator, the variable capacitance that MEMS cantilever beam and sensing electrode constitute is used for forming the capacitance three-point type voltage controlled oscillator, the output signal of capacitance three-point type voltage controlled oscillator is through being linked into the input of feedback signal behind the programmable divider, thereby constitute the frequency multiplier loop, realized the frequency multiplier based on micromachine cantilever beam condenser type power sensor.
Preparation method based on the frequency multiplier of micromachine cantilever beam condenser type power sensor may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of GaAs is that (general concentration is more than or equal to 10 in heavy doping
18Cm
-3), its square resistance is 100 Ω～130 Ω;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of ground wire and CPW holding wire, MEMS cantilever beam, press welding block and the connecting line of sensing electrode;
8) anti-carve tantalum nitride, form the terminal build-out resistor that merit is closed isolation resistance and the 3rd CPW holding wire end of device, its resistance value is 25 Ω;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technology (PECVD) growth
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: keep the silicon nitride on MEMS cantilever beam below the 3rd CPW holding wire and lower side ground wire, sensing electrode and the air bridges below connecting line;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit; The photoetching polyimide sacrificial layer, only keep MEMS cantilever beam and air bridges the below sacrifice layer;
12) evaporation titanium/gold/titanium, its thickness is
Evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, corrosion down payment, press welding block and the connecting line of the anchor district of formation ground wire and CPW holding wire, MEMS cantilever beam, MEMS cantilever beam, air bridges, sensing electrode;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer of MEMS cantilever beam and air bridges below, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries;
19) external capacitor bikini voltage controlled oscillator and divider.
The above only is preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
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| CN103811834A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical cantilever beam type pi type continuous reconfigurable microwave band-pass filter |
| CN103812467A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical cantilever beam type sixteen-state reconfigurable microwave band-pass filter |
| CN105162420A (en) * | 2015-07-01 | 2015-12-16 | 东南大学 | Gallium-arsenide-based low-leakage-current double-cantilever switch double-grid frequency multiplier |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811834A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical cantilever beam type pi type continuous reconfigurable microwave band-pass filter |
| CN103812467A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical cantilever beam type sixteen-state reconfigurable microwave band-pass filter |
| CN103811834B (en) * | 2014-02-17 | 2016-03-02 | 东南大学 | The continuous reconfigurable microwave band pass filter of micromachine cantilever beam formula π type |
| CN103812467B (en) * | 2014-02-17 | 2016-08-03 | 东南大学 | Micromachine cantilever beam formula 16 state reconfigurable microwave band filter |
| CN105162420A (en) * | 2015-07-01 | 2015-12-16 | 东南大学 | Gallium-arsenide-based low-leakage-current double-cantilever switch double-grid frequency multiplier |
| CN105162420B (en) * | 2015-07-01 | 2017-11-28 | 东南大学 | GaAs base low-leakage current double cantilever beam switchs double grid frequency multiplier |
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