CN103280480A - Thin-film solar cell substrate, thin-film solar cell and manufacturing method of thin-film solar cell - Google Patents
Thin-film solar cell substrate, thin-film solar cell and manufacturing method of thin-film solar cell Download PDFInfo
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a thin-film solar cell substrate which comprises a plurality of light trapping areas and a plurality of laser channel areas, wherein the light trapping areas and the laser channel areas are alternately arranged, at least one surface of each light trapping area is of a light trapping structure, and two surfaces of each laser channel area are flat. Correspondingly, the invention further provides a thin-film solar cell based on the thin-film solar cell substrate and a manufacturing method of the thin-film solar cell. The thin-film solar cell substrate is provided with the light trapping areas and the laser channel areas, the thin-film solar cell is formed by the thin-film solar cell substrate, light trapping effects of the thin-film solar cell can be effectively strengthened, production processes of the thin-film solar cell can be simplified, raw materials can be saved, the contradiction, in front electrode manufacturing with a sputtering method or an LPCVD method, of mutual restrictions between electrical properties and optical properties is relieved, and the manufacturing method is completely compatible with an existing thin-film solar cell manufacturing process.
Description
Technical field
The present invention relates to area of solar cell, relate in particular to a kind of thin-film solar cell substrate, thin-film solar cells and preparation method thereof.
Background technology
After 2004, the develop rapidly of global photovoltaic generation industry has caused the lasting in short supply of global polysilicon supply, has seriously restricted the development of crystal silicon cell industry, and robbing between the crystal silicon cell enterprise expected and also aggravation thereupon of price competition.Compare with crystal silicon cell, silicon-based film solar cells has the advantage that raw material are abundant, energy consumption is little, cost is cheap relatively.Under the background of polycrystalline silicon material bottleneck restriction crystal silicon cell development, the silicon-based film solar cells industry is quietly risen.Because the temperature coefficient of silicon-based film solar cells is little, low light level effect is good, and characteristics such as energy income height make that silicon-based film solar cells has obtained in some fields using widely, have become an important technology route of field of photovoltaic power generation.
There is the photo attenuation problem of intrinsic in silicon-based film solar cells, and the ability of its anti-photo attenuation or stability depend on the thickness of silicon intrinsic layer to a great extent, and wherein, the thickness of intrinsic layer is more thin, and the stability of entire cell is just more good.Concerning the laminated silicon-base film solar cell, the thickness of battery is big at the bottom of the microcrystal silicon, deposition rate is low, in order to enhance productivity, to reduce production costs, wishes that also its thickness gets over Bao Yuehao.A kind of effective ways that address the above problem are to adopt light trapping structure.Concerning the amorphous silicon battery of direct band gap, light trapping structure can effectively reduce its thickness.The microcrystal silicon material of the non-direct band gap in the laminated silicon-base film solar cell, absorb sunlight as much as possible in the thin material of trying one's best, light trapping structure more is absolutely necessary.Light trapping structure can come by increasing the light path of incident light in intrinsic layer, strengthens the purpose that absorbs sunlight to reach, thereby reduces the thickness of battery intrinsic layer, improves short-circuit current density, is very important for the performance that promotes laminated cell.
At present, in the process of producing this laminated cell of silicon-based film solar cells, adopt plate glass as the substrate of silicon-based film solar cells usually, and select for use transparent conductive oxide as the material of preceding electrode, for example ZnO.
Usually, if use sputtering method growth ZnO nesa coating as preceding electrode, the surface of this ZnO nesa coating is smooth, does not have any light trapping structure.Therefore, need wet this ZnO nesa coating of etching of later use acid solution to form usually and have certain matte light trapping structure that falls into optical property.If wish to reach 20% mist degree, need etch away the thick ZnO material of about 50-200nm at this ZnO nesa coating.The preparation technology of this making light trapping structure and equipment is very complicated and difficult control all, and can cause the waste of valuable ZnO material, is unfavorable for saving cost and simplifies production procedure.
If utilize low pressure chemical vapor deposition (LPCVD) method to form the ZnO nesa coating at substrate, the surface topography of this ZnO nesa coating will be small gold turriform shape, therefore can obtain good light trapping structure.But this light trapping structure has very strong wavelength selectivity, that is, have good light to fall into effect to short wavelength's light, but that the long wave required to lamination solar cell (region of ultra-red) light falls into effect is very limited.Therefore cause the electrology characteristic of lamination solar cell and the mutual restriction between the optical characteristics.Can be considered to the birth defects that LPCVD prepares the ZnO nesa coating to the sunken limitation that acts on of the light of long wavelength light.
Seek simple and effective more sunken light technology and become the photovoltaic field focus of researcher's concern in the industry to overcome above-mentioned defective.Someone proposes to utilize crystalline silicon assembly pattern glass commonly used to make substrate and prepares light trapping structure in advance, and this method has obtained good effect at the small size battery.But this method lacks practicality for thin-film solar cells.This is because need to use separation method that thin-film solar cells is separated into the sub-battery unit that designs in preparation process, and form cascaded structure to reach the raising open circuit voltage, the purpose of reduction current loss between sub-battery unit and sub-battery unit.That is to say, must separate series connection and could form practical Thinfilm solar cell assembly.Wherein, separation utilizes laser to see through substrate successively preceding electrode layer, photoelectric conversion layer and dorsum electrode layer to be rule to realize.Prepare Thinfilm solar cell assembly if adopt pattern glass to make substrate, laser can be scattered when laser saw through pattern glass, the light beam that can't the form focusing operation of ruling.Therefore, use pattern glass can't be used for the preparation of Thinfilm solar cell assembly as the scheme of substrate.
Summary of the invention
For realizing that purpose of the present invention provides a kind of thin-film solar cell substrate and based on thin-film solar cells of this cell substrates and preparation method thereof.
According to an aspect of the present invention, a kind of thin-film solar cell substrate is provided, described substrate comprises a plurality of sunken light zone and a plurality of laser channelings zone of alternately arranging, wherein, at least one surface in described sunken light zone has light trapping structure, and two surfaces in described laser channeling zone all present flat condition.
According to another aspect of the present invention, also provide a kind of preparation method of thin-film solar cells, this preparation method comprises:
Electrode layer before aforesaid base plate forms;
First laser grooving and scribing is carried out to electrode layer before described in the laser channeling zone that sees through described substrate, forms first groove that runs through described preceding electrode layer;
Electrode layer forms light energy conversion layer before described;
Second laser grooving and scribing is carried out to described light energy conversion layer in the laser channeling zone that sees through described substrate, forms second groove that runs through described light energy conversion layer;
Form dorsum electrode layer at described light energy conversion layer;
The 3rd laser grooving and scribing is carried out to described light energy conversion layer and described dorsum electrode layer in the laser channeling zone that sees through described substrate, forms the 3rd groove that runs through described light energy conversion layer and described dorsum electrode layer.
According to a further aspect of the invention, also provide a kind of thin-film solar cells, comprised substrate, preceding electrode layer, light energy conversion layer, dorsum electrode layer and the 3rd groove, wherein:
Electrode layer is positioned on the described substrate before described, and has a plurality of first grooves that run through himself;
Described light energy conversion layer is positioned on the described preceding electrode layer and to described first groove fills, and it has a plurality of second grooves that run through himself;
Described dorsum electrode layer is positioned on the described light energy conversion layer and to described second groove fills;
Described the 3rd groove runs through described dorsum electrode layer and described light energy conversion layer, wherein:
Described substrate adopts aforesaid base plate, and described first groove, described second groove and described the 3rd groove are positioned on the laser channeling zone of described substrate.
Compared with prior art, the present invention has the following advantages:
(1) utilize the substrate with light trapping structure to prepare thin-film solar cells, be conducive to increase incident light at the light path of thin-film solar cells inside, thereby reduce the performance of the thickness of light energy conversion layer, the short-circuit current density that improves thin-film solar cells, the photoelectric conversion efficiency that increases battery and lifting battery effectively.
(2) can reach good sunken light effect owing to have light trapping structure on the substrate, so, in the preparation process of follow-up thin-film solar cells, if adopt sputtering method to form preceding electrode layer, then need not again preceding electrode layer is carried out corrosion treatment obtaining suede structure on its surface, thereby can simplify the flow process of battery production and save production cost; If adopt the LPCVD method to form preceding electrode layer, then can improve the sunken light effect to long wave (region of ultra-red) effectively, particularly have better effect for overlapping thin film solar battery.
(3) owing to have the laser channeling zone on the substrate, allow the laser grooving and scribing operation, therefore the preparation technology with existing thin-film solar cells is compatible fully.
Description of drawings
By reading the detailed description of doing with reference to the following drawings that non-limiting example is done, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 (a) is the structural representation of membrane according to the invention solar cell substrate;
Fig. 1 (b) is the cross section structure schematic diagram of thin-film solar cell substrate shown in Fig. 1 (a);
Fig. 2 is the cross sectional representation of the patterned structure of substrate surface in accordance with a preferred embodiment of the present invention;
Fig. 3 is the preparation method's of membrane according to the invention solar cell flow chart;
Fig. 4 (a) to Fig. 4 (g) be generalized section according to each stage of flow preparation thin-film solar cells shown in Figure 3.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical or similar label is represented identical or similar elements or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
Disclosing hereinafter provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter parts and the setting to specific examples is described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between the various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the use of applicability and/or the other materials of other technologies.In addition, first feature described below second feature it " on " structure can comprise that first and second features form the embodiment of direct contact, can comprise that also additional features is formed on the embodiment between first and second features, such first and second features may not be direct contacts.Should be noted that illustrated parts are not necessarily drawn in proportion in the accompanying drawings.The present invention has omitted description to known assemblies and treatment technology and technology to avoid unnecessarily limiting the present invention.
According to an aspect of the present invention, provide a kind of thin-film solar cell substrate.Fig. 1 (a) is the structural representation of membrane according to the invention solar cell substrate, and Fig. 1 (b) is the cross section structure schematic diagram of thin-film solar cell substrate shown in Fig. 1 (a).Shown in Fig. 1 (a) and Fig. 1 (b), described substrate comprises a plurality of sunken light zone 100 and a plurality of laser channelings zone 110 of alternately arranging, wherein, at least one surface in described sunken light zone 100 has light trapping structure, and two surfaces in described laser channeling zone 110 all are flat condition.
Particularly, the material that is used to form thin-film solar cell substrate has the characteristic of printing opacity, thereby makes the sunlight of incident enter into the inside of thin-film solar cells by substrate, realizes the process of opto-electronic conversion.In the present embodiment, the material of described thin-film solar cell substrate is the low high printing opacity photovoltaic glass of iron.Those skilled in the art it should be understood that the material of thin-film solar cell substrate should not only limit to the high printing opacity photovoltaic glass of above-mentioned low iron, can also be glass or the transparent polymer of other types, for brevity, enumerates no longer one by one at this.
Below, will be that example describes thin-film solar cell substrate provided by the present invention with the low high printing opacity photovoltaic glass of iron.
Shown in Fig. 1 (a) and Fig. 1 (b), the high printing opacity photovoltaic glass of described low iron substrate comprises a plurality of sunken light zones 100 and a plurality of laser channelings zone 110, and wherein, alternately arrange with described laser channeling zone 110 in described sunken light zone 100.In a preferred embodiment, described sunken light zone 100 and described laser channeling zone 110 are parallel to each other, and the long limit in described sunken light zone 100 and described laser channeling zone 110 all is parallel to the edge (i.e. long limit or the minor face of the low high printing opacity photovoltaic glass of iron substrate) of the high printing opacity photovoltaic glass of described low iron substrate.Each described sunken light zone 100 all is rendered as elongate in shape, and its width (L1) depends on the design requirement of sub-battery unit width.Width (L2) scope in described laser channeling zone 110 is generally 250-2000 μ m.With a specific embodiment explanation, the length of the low high printing opacity photovoltaic glass of iron substrate is respectively 1300mm, 1100mm, 3.2mm, and the number that falls into light zone 100 is 128, i.e. corresponding 128 sub-battery units.Sunken light zone 100 and alternately arrangement of laser channeling zone 110, and the long limit in sunken light zone 100 and laser channeling zone 110 is parallel to the long limit of the low high printing opacity photovoltaic glass of iron substrate.The width (L1) in each described sunken light zone 100 is 8.06523mm, the width (L2) in described laser channeling zone 110 is 0.4mm, all be parallel to the long limit of hanging down the high printing opacity photovoltaic glass of iron substrate owing to fall into the long limit in light zone 100 and laser channeling zone 110, so its two length is 1300mm.
Need to prove, the low high printing opacity photovoltaic glass of iron substrate is corresponding just for example with 128 sub-battery units herein, in actual applications, the concrete number that falls into light zone 100 determines by the concrete number of sub-battery unit, and the concrete number of sub-battery unit is determined by the actual requirement of the open circuit voltage of Thinfilm solar cell assembly.In addition, the concrete shape in described sunken light zone 100 also is the design requirement decision by practical application neutron battery unit shape, be not limited to the elongate in shape that is parallel to the low high printing opacity photovoltaic glass of iron substrate edges in above-mentioned the giving an example, for brevity, give unnecessary details no longer one by one at this.
Surface in described sunken light zone 100 has light trapping structure.In the present embodiment, described light trapping structure is for carrying out roll-in in the surperficial formed patterned structure that falls into light zone 100 by the non-tin face to the low high printing opacity photovoltaic glass of iron.In other embodiments, also can be that tin face to the low high printing opacity photovoltaic glass of iron carries out roll-in and in the surperficial formed patterned structure that falls into light zone 100, or be that roll-in is all carried out and in the surperficial formed patterned structure that falls into light zone 100 in two surfaces of the low high printing opacity photovoltaic glass of iron.Need to prove, according to the difference of knurling mould, can form multiple difform light trapping structure on the surface of the low high printing opacity photovoltaic glass of iron.Preferably, described patterned structure is arranged according to certain rule by the pit with geometry usually and is constituted, and the size of this pit is generally less, to reach good sunken light effect.In a preferred embodiment, described pit be shaped as inverted cone, the bottom surface diameter of this inverted cone is 0.25mm, height is 0.25mm, the surface that falls into light zone 100 at the low high printing opacity photovoltaic glass of iron is cellular tight arrangement, be spaced apart 0.25mm between the adjacent described pit, wherein, the cross sectional representation of cellular compact arranged this pit please refer to Fig. 2.In reality processing, because restriction and the error of technological level, pit is not the shape that strictly has rule, as long as dimensional discrepancy is in the scope that technology allows (such as 50 μ m).In other embodiments, described pit can also be other shapes, for brevity, enumerates no longer one by one at this.
What it will be appreciated by those skilled in the art that is, except the method for utilizing roll-in, the method that can also adopt chemical etching etc. to be fit to forms for example light trapping structure of small Pyramid on the surface of the low high printing opacity photovoltaic glass of iron.
Compared with prior art, thin-film solar cell substrate provided by the present invention has the following advantages:
(1) the substrate provided by the present invention laser channeling zone that has the sunken light zone corresponding with sub-battery unit and have flat surfaces.Wherein, laser can form the light beam of focusing when regional by the laser channeling of flat surfaces and can not be scattered, therefore, this substrate can be applied in the preparation of thin-film solar cells, and with prior art in the preparation technology of thin-film solar cells compatible fully.And the sunken light zone of substrate surface is conducive to the good sunken light effect of thin-film solar cells acquisition, improves photoelectric conversion efficiency.
(2) board structure provided by the present invention is simple, is easy to make.
A kind of preparation method of thin-film solar cells also is provided according to a further aspect in the invention.Fig. 3 is the preparation method's of membrane according to the invention solar cell flow chart.Fig. 4 (a) to Fig. 4 (g) be generalized section according to each stage of flow preparation thin-film solar cells shown in Figure 3.Below, will describe the preparation method of thin-film solar cells provided by the present invention to Fig. 4 (g) in conjunction with Fig. 4 (a).As shown in Figure 3, this preparation method may further comprise the steps:
In step S101, electrode layer 200 before aforesaid substrate forms.
Particularly, shown in Fig. 4 (a), utilize for example method such as low-pressure chemical vapor deposition (LPCVD) or magnetron sputtering electrode layer 200 before substrate forms, wherein, what described substrate adopted is thin-film solar cell substrate provided by the present invention.That is, described substrate comprises a plurality of sunken light zone 100 and a plurality of laser channelings zone 110 of alternately arranging, and wherein, at least one surface in described sunken light zone 100 has light trapping structure, and two surfaces in described laser channeling zone 110 all present flat condition.Preamble describes in detail the structure of this substrate and material etc., for brevity, no longer repeats to describe at this.Electrode layer 200 can be formed on any one surface of described substrate before described, preferably, is formed on the surface with light trapping structure.In the present embodiment, the material of described preceding electrode layer 200 is transparent conductive oxide (TCO), for example ZnO, SnO etc.
In step S102, the 110 pairs of described preceding electrode layers 200 in laser channeling zone that see through described substrate carry out first laser grooving and scribing, form first groove 210 that runs through described preceding electrode layer 200.
Particularly, after preceding electrode layer 200 forms, utilize laser that this preceding electrode layer 200 is carried out first laser grooving and scribing.Shown in Fig. 4 (b), when carrying out first laser grooving and scribing, laser enters substrate (laser is injected direction shown in the direction of arrow the figure) from described substrate as the surface that a side of advancing the light face sees through laser channeling zone 110.Because 110 surfaces, laser channeling zone are smooth, therefore laser after this light beam passes laser channeling zone 110, acts on preceding electrode layer 200 by the regional light beam that can form focusing at 110 o'clock of this laser channeling, formation runs through first groove 210 of this preceding electrode layer 200, shown in Fig. 4 (c).The width range of described first groove 210 is about 30-50 μ m.When carrying out first laser grooving and scribing, need to adopt the laser that has high-absorbable for preceding electrode layer 200.In the present embodiment, adopting wavelength is that infrared laser or the 355nm Ultra-Violet Laser of 1064mm carries out described first laser grooving and scribing.
In step S103, electrode layer 200 forms light energy conversion layer 300 before described.
Particularly, shown in Fig. 4 (d), form light energy conversion layer 300 at the preceding electrode layer 200 that is formed with first groove 210.On the material, the described light energy conversion layer 300 preferred amorphous silicons (a-Si) that adopt.On the structure, described light energy conversion layer 300 can be that one deck also can be the sandwich construction that stack arranges.Forming light energy conversion layer 300 is the technology that those skilled in the art were familiar with, and does not repeat them here.In the process that light energy conversion layer 300 forms, first groove 210 on the preceding electrode layer 200 is filled by part light energy conversion layer 300.
In step S104, the 110 pairs of described light energy conversion layers 300 in laser channeling zone that see through described substrate carry out second laser grooving and scribing, form second groove 310 that runs through described light energy conversion layer 300.
Particularly, after light energy conversion layer 300 forms, utilize laser that this light energy conversion layer 300 is carried out second laser grooving and scribing.When carrying out second laser grooving and scribing, need to adopt for preceding electrode layer 200 to have high-permeability and have the laser of high-absorbable for light energy conversion layer 300.In the present embodiment, adopting wavelength is that the green laser of 532mm carries out described second laser grooving and scribing.Shown in Fig. 4 (d), when carrying out second laser grooving and scribing, laser enters substrate (laser is injected direction shown in the direction of arrow the figure) from described substrate as the surface that a side of advancing the light face sees through laser channeling zone 110, after the light beam that this laser forms passes laser channeling zone 110 and preceding electrode layer 200, act on light energy conversion layer 300, side in the same way at described first groove 210 forms second groove 310 that runs through this light energy conversion layer 300, shown in Fig. 4 (e).Interval between described second groove 310 and described first groove 210 is about 100 μ m.The width range of described second groove 310 is about 30-50 μ m.
In step S105, form dorsum electrode layer 400 at described light energy conversion layer 300.
Particularly, shown in Fig. 4 (f), on the light energy conversion layer 300 that is formed with second groove 310, for example utilize methods such as low-pressure chemical vapor deposition (LPCVD), magnetron sputtering on described light energy conversion layer 300 deposit transparent conductive oxide (TCO) to form dorsum electrode layer 400, or, utilize deposition techniques metal materials such as sputter, physical vapor deposition (PVD) to form dorsum electrode layer 400.Because have second groove 310 on the light energy conversion layer 300, therefore, partially transparent conductive oxide or metal material can enter in second groove 310, form the dorsum electrode layer 400 that is connected with preceding electrode layer 200.
In step S106, the laser channeling 110 pairs of described light energy conversion layers 300 in zone and the described dorsum electrode layer 400 that see through described substrate carry out the 3rd laser grooving and scribing, form the 3rd groove 410 that runs through described light energy conversion layer 300 and described dorsum electrode layer 400.
Particularly, after dorsum electrode layer 400 forms, utilize laser that this dorsum electrode layer 400 is carried out the 3rd laser grooving and scribing.When carrying out the 3rd laser grooving and scribing, need to adopt for preceding electrode layer 200 to have high-permeability and have the laser of high-absorbable for light energy conversion layer 300 and dorsum electrode layer 400.In the present embodiment, adopting wavelength is that the green laser of 532mm carries out described the 3rd laser grooving and scribing.Shown in Fig. 4 (f), when carrying out the 3rd laser grooving and scribing, laser enters substrate (laser is injected direction shown in the direction of arrow the figure) from described substrate as the surface that a side of advancing the light face sees through laser channeling zone 110, after the light beam that this laser forms passes laser channeling zone 110 and preceding electrode layer 200, act on light energy conversion layer 300 and dorsum electrode layer 400, side in the same way at described second groove 310 forms the 3rd groove 410 that runs through this light energy conversion layer 300 and dorsum electrode layer 400, shown in Fig. 4 (g).Interval between described the 3rd groove 410 and described second groove 310 is about 100 μ m.The width range of described the 3rd groove 410 is about 30-50 μ m.
After carrying out the 3rd laser grooving and scribing, formed the sub-battery unit of a plurality of series connection, these a plurality of sub-battery units are to be separated to form by the 3rd groove 410.Shown in Fig. 4 (g), the part between two adjacent the 3rd grooves 410 is a sub-battery unit, and this sub-battery unit has preceding electrode layer 200, light energy conversion layer 300 and dorsum electrode layer 400.Second groove 310 of the dorsum electrode layer 400 of this sub-battery unit by running through this light energy conversion layer 300 is connected with the preceding electrode layer 200 of adjacent sub-battery unit, thereby realized the series connection of a plurality of sub-battery units.
After step S106, also to further carry out the laser flash trimming, draw the battery positive and negative electrode and utilize for example polyvinyl butyral resin (PVB) and glass back plate that battery is carried out the step of lamination, to form Thinfilm solar cell assembly.Because flash trimming, extraction electrode and lamination are the technology that those skilled in the art are familiar with, and therefore, for brevity, do not repeat them here.
Compared with prior art, the preparation method of thin-film solar cells provided by the present invention has the following advantages:
(1) utilize the substrate with light trapping structure to prepare thin-film solar cells, be conducive to increase incident light at the light path of thin-film solar cells inside, thereby reduce the performance of the thickness of light energy conversion layer, the short-circuit current density that improves thin-film solar cells, the photoelectric conversion efficiency that increases battery and lifting battery effectively.
(2) can reach good sunken light effect owing to have light trapping structure on the substrate, so, in the preparation process of follow-up thin-film solar cells, if adopt sputtering method to form preceding electrode layer, then need not again preceding electrode layer is carried out corrosion treatment obtaining suede structure on its surface, thereby can simplify the flow process of battery production and save production cost; If adopt the LPCVD method to form preceding electrode layer, then can improve the sunken light effect to long wave (region of ultra-red) effectively, particularly have better effect for overlapping thin film solar battery.
(3) owing to have the laser channeling zone on the substrate, allow the laser grooving and scribing operation, therefore preparation method provided by the present invention can be compatible fully with the preparation technology of existing thin-film solar cells.
Correspondingly, the present invention also provides a kind of thin-film solar cells.Fig. 4 (g) is the generalized section of thin-film solar cells provided by the present invention.As shown in the figure, thin-film solar cells provided by the present invention comprises substrate, preceding electrode layer 200, light energy conversion layer 300, dorsum electrode layer 400 and the 3rd groove 410, wherein, what described substrate adopted is thin-film solar cell substrate provided by the present invention, electrode layer 200 is positioned on the described substrate before described, and has a plurality of first grooves 210 that run through himself; Described light energy conversion layer 300 is positioned on the described preceding electrode layer 200 and to described first groove 210 fills, and it has a plurality of second grooves 310 that run through himself; Described dorsum electrode layer 400 is positioned on the described light energy conversion layer 300 and to described second groove 310 fills; Described the 3rd groove 410 runs through described dorsum electrode layer 400 and described light energy conversion layer 300; Described first groove 210, described second groove 310 and described the 3rd groove 410 are positioned on the laser channeling zone 110 of described substrate.
What particularly, described substrate adopted is substrate provided by the present invention.That is, described substrate comprises a plurality of sunken light zone 100 and a plurality of laser channelings zone 110 of alternately arranging, and wherein, at least one surface in described sunken light zone 100 has light trapping structure, and two surfaces in described laser channeling zone 110 all present flat condition.Preamble describes in detail the structure of this substrate and material etc., for brevity, no longer repeats to describe at this.
Described light energy conversion layer 300 is positioned on the described preceding electrode layer 200, and the described light energy conversion layer 300 of part is filled in first groove 210 of preceding electrode layer 200.On the material, the described light energy conversion layer 300 preferred amorphous silicons (a-Si) that adopt.On the structure, described light energy conversion layer 300 can be that one deck also can be the sandwich construction that stack arranges.Described light energy conversion layer 300 has a plurality of second grooves 310 that run through himself.In the present embodiment, the number of described second groove 310 is identical with the number of substrate laser passage area 110, and described second groove 310 is corresponding one by one respectively with the laser channeling zone 110 of first groove 210 and substrate, namely, each described second groove 310 all is positioned on the laser channeling zone 110 corresponding with it, and all is positioned at the side in the same way of first groove 210 corresponding with it.In the present embodiment, the width range of described second groove 310 is about 30-50 μ m.Interval between described second groove 310 and first groove 210 is about 100 μ m.
Described dorsum electrode layer 400 is positioned on the described light energy conversion layer 300, and the described dorsum electrode layer 400 of part is filled in second groove 310 of light energy conversion layer 300.The material of described dorsum electrode layer 400 can be transparent conductive oxide, can also be metal material.
Thin-film solar cells provided by the present invention comprises that also the main effect of the 3rd groove 410, the three grooves 410 is that the sub-battery unit in the thin-film solar cells is separated.Described the 3rd groove 410 runs through described dorsum electrode layer 400 and light energy conversion layer 300.In the present embodiment, the number of described the 3rd groove 410 is identical with the number of substrate laser passage area 110, and described the 3rd groove 410 is corresponding one by one respectively with the laser channeling zone 110 of first groove 210, second groove 310 and substrate, namely, each described the 3rd groove 410 all is positioned on the laser channeling zone 110 corresponding with it, and all is positioned at first groove 210 corresponding with it and the side in the same way of second groove 310.In the present embodiment, the width range of described the 3rd groove 410 is about 30-50 μ m.Interval between described the 3rd groove 410 and second groove 310 is about 100 μ m.
The existence of described first groove 210 has realized the separation to preceding electrode layer 200, and the existence of described the 3rd groove 310 has realized the separation to light energy conversion layer 300 and dorsum electrode layer 400, thereby has formed a plurality of independently sub-battery units.Each sub-battery unit all has preceding electrode layer 200, light energy conversion layer 300 and dorsum electrode layer 400, and second groove 310 of the dorsum electrode layer 400 of this sub-battery unit by running through this light energy conversion layer 300 is connected with the preceding electrode layer 200 of adjacent sub-battery unit, thereby realized the series connection of a plurality of sub-battery units.
Its substrate surface of thin-film solar cells provided by the present invention has light trapping structure, can increase incident light at the light path of thin-film solar cells inside, thereby reduce the performance of the thickness of light energy conversion layer, the short-circuit current density that improves thin-film solar cells, the photoelectric conversion efficiency that increases battery and lifting battery effectively.
Though describe in detail about example embodiment and advantage thereof, be to be understood that under the situation of the protection range that does not break away from the restriction of spirit of the present invention and claims, can carry out various variations, substitutions and modifications to these embodiment.For other examples, when those of ordinary skill in the art should understand easily in keeping protection range of the present invention, the order of processing step can change.
In addition, range of application of the present invention is not limited to technology, mechanism, manufacturing, material composition, means, method and the step of the specific embodiment of describing in the specification.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technology, mechanism, manufacturing, material composition, means, method or the step that have existed or be about to later on develop at present, wherein they are carried out the corresponding embodiment cardinal principle identical functions of describing with the present invention or obtain identical substantially result, can use them according to the present invention.Therefore, claims of the present invention are intended to these technology, mechanism, manufacturing, material composition, means, method or step are included in its protection range.
Claims (19)
1. thin-film solar cell substrate is characterized in that:
Described substrate comprises a plurality of sunken light zone (100) and a plurality of laser channelings zone (110) of alternately arranging, wherein, at least one surface in described sunken light zone (100) has light trapping structure, and two surfaces in described laser channeling zone (110) all are flat condition.
2. substrate according to claim 1 is characterized in that, the long limit in described laser channeling zone (110) is parallel to the edge of described substrate.
3. substrate according to claim 1 is characterized in that, the width in described laser channeling zone (110) is 250-2000 μ m.
4. according to each described substrate in the claim 1 to 3, it is characterized in that:
Described substrate is the low high printing opacity photovoltaic glass of iron;
Described light trapping structure is for to carry out the formed patterned structure of roll-in by the non-tin face to the high printing opacity photovoltaic glass of described low iron.
5. substrate according to claim 4 is characterized in that:
Described patterned structure is the pit with geometry, and this pit is cellular tight arrangement at the high printing opacity photovoltaic glass surface of described low iron.
6. substrate according to claim 5 is characterized in that:
Described pit be shaped as inverted cone, the bottom surface diameter of this inverted cone is 0.25mm, height is 0.25mm; Be spaced apart 0.25mm between the adjacent described pit.
7. the preparation method of a thin-film solar cells, this preparation method may further comprise the steps:
Electrode layer (200) before described substrate forms as claim 1 to 6;
First laser grooving and scribing is carried out to electrode layer (200) before described in the laser channeling zone (110) that sees through described substrate, forms first groove (210) that runs through described preceding electrode layer (200);
Electrode layer before described (200) forms light energy conversion layer (300);
Second laser grooving and scribing is carried out to described light energy conversion layer (300) in the laser channeling zone (110) that sees through described substrate, forms second groove (310) that runs through described light energy conversion layer (300);
Form dorsum electrode layer (400) at described light energy conversion layer (300);
The 3rd laser grooving and scribing is carried out to described light energy conversion layer (300) and described dorsum electrode layer (400) in the laser channeling zone (110) that sees through described substrate, forms the 3rd groove (410) that runs through described light energy conversion layer (300) and described dorsum electrode layer (400).
8. preparation method according to claim 7 is characterized in that, described before described substrate forms as claim 1 to 6 step of electrode layer (200) comprising:
Electrode layer (200) before described substrate has the surface formation of light trapping structure.
9. according to claim 7 or 8 described preparation methods, it is characterized in that:
Described second groove (310) is positioned at the side in the same way of described first groove (210);
Described the 3rd groove (410) is positioned at the side in the same way of described second groove (310).
10. according to claim 7 or 8 described preparation methods, it is characterized in that:
The width range of described first groove (210), described second groove (310), described the 3rd groove (410) is 30-50 μ m.
11. according to claim 7 or 8 described preparation methods, it is characterized in that:
Be spaced apart 100 μ m between described first groove (210), described second groove (310), described the 3rd groove (410).
12. according to claim 7 or 8 described preparation methods, it is characterized in that:
The employing wavelength is that infrared laser or the 355nm Ultra-Violet Laser of 1064mm carries out described first laser grooving and scribing;
The employing wavelength is that the green laser of 532mm carries out described second laser grooving and scribing and described the 3rd laser grooving and scribing.
13. according to claim 7 or 8 described preparation methods, it is characterized in that:
The material of electrode layer (200) is transparent conductive oxide before described;
The material of described light energy conversion layer (300) is amorphous silicon;
The material of described dorsum electrode layer (400) is metal or transparent conductive oxide.
14. a thin-film solar cells comprises substrate, preceding electrode layer (200), light energy conversion layer (300), dorsum electrode layer (400) and the 3rd groove (410), wherein:
Electrode layer (200) is positioned on the described substrate before described, and has a plurality of first grooves (210) that run through himself;
Described light energy conversion layer (300) is positioned at described preceding electrode layer (200) to be gone up and described first groove (210) is filled, and it has a plurality of second grooves (310) that run through himself;
Described dorsum electrode layer (400) is positioned at described light energy conversion layer (300) and goes up and described second groove (310) is filled;
Described the 3rd groove (410) runs through described dorsum electrode layer (400) and described light energy conversion layer (300), it is characterized in that:
Described substrate is the described substrate of claim 1 to 6, and described first groove (210), described second groove (310) and described the 3rd groove (410) are positioned on the laser channeling zone (110) of described substrate.
15. thin-film solar cells according to claim 14 is characterized in that:
Electrode layer (200) is positioned on the surface that described substrate has light trapping structure before described.
16. according to claim 14 or 15 described thin-film solar cells, it is characterized in that:
Described second groove (310) is positioned at the side in the same way of described first groove (210);
Described the 3rd groove (410) is positioned at the side in the same way of described second groove (310).
17. according to claim 14 or 15 described thin-film solar cells, it is characterized in that:
The width range of described first groove (210), described second groove (310), described isolation channel (410) is 30-50 μ m.
18. according to claim 14 or 15 described thin-film solar cells, it is characterized in that:
Be spaced apart 100 μ m between described first groove (210), described second groove (310), the described isolation channel (410).
19. according to claim 14 or 15 described thin-film solar cells, it is characterized in that:
The material of electrode layer (200) is transparent conductive oxide before described;
The material of described light energy conversion layer (300) is amorphous silicon;
The material of described dorsum electrode layer (400) is metal or transparent conductive oxide.
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