CN103273414A - Chemical-mechanical polishing device and method thereof - Google Patents
Chemical-mechanical polishing device and method thereof Download PDFInfo
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- CN103273414A CN103273414A CN2013101222476A CN201310122247A CN103273414A CN 103273414 A CN103273414 A CN 103273414A CN 2013101222476 A CN2013101222476 A CN 2013101222476A CN 201310122247 A CN201310122247 A CN 201310122247A CN 103273414 A CN103273414 A CN 103273414A
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- magnetic material
- mechanical polishing
- polishing device
- chemical mechanical
- diamond
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- 238000005498 polishing Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000696 magnetic material Substances 0.000 claims abstract description 76
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 64
- 239000010432 diamond Substances 0.000 claims abstract description 64
- 239000000126 substance Substances 0.000 claims description 40
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000008569 process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides a chemical-mechanical polishing device and a method of the chemical-mechanical polishing device. The chemical-mechanical polishing device comprises a rotating disk, a polishing pad fixedly arranged on the rotating disk, a polishing head used for fixing a wafer to be polished, and a diamond arranging disk located on the polishing pad, wherein the polishing head is provided with first magnetic material, and the diamond arranging disk is provided with second magnetic material with the polarity same as that of the first magnetic material. According to the principle that the likes repel, the polishing head is prevented from colliding with the diamond arranging disk, so that macro scratches and abrasion of the wafer are reduced, and the yield of the water is promoted; the chemical-mechanical polishing device can be improved on the basis of an existing device, the method is simple, and meanwhile, stability of a machine is promoted.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of chemical mechanical polishing device and method thereof.
Background technology
Cmp (CMP, Chemical Mechanical Polishing) technology was introduced the integrated circuit process industry by IBM in 1984, and at first be used for the metalwork dielectric (IMD of postchannel process, Inter Metal Dielectric) planarization, be used for the planarization of tungsten then by the improvement of equipment and technology, be used for shallow trench isolation subsequently from the planarization of (STI) and copper.Cmp is a very active technology in the IC processing procedure in recent years.
The mechanism of cmp is to grind the superficial layer of the surfacing of wafer and the relatively easy removal of one deck that lapping liquid generation chemical reaction generates, described superficial layer is by the grinding agent in the lapping liquid and be applied to the grinding pressure that is ground on the wafer, with the relative motion of grinding pad in mechanically ground off.
Because CMP can accurately and equably turn to thickness and the flatness that needs to wafer planarization, has become most widely used a kind of having an even surface technology in the semiconductor fabrication.
Please refer to Fig. 1, existing chemical mechanical polishing device comprises: grinding pad (polish pad) 102 is layered on the rotating disk 101; Grinding head 103 is also referred to as clamping head or rubbing head, is used for holding the wafer that will grind at process of lapping; Diamond arrangement dish 104 comprises diamond fixed disk 105 and is fixed in the diamond grains 106 of diamond fixed disk, is used for striking off the surface of grinding pad 102; Lapping liquid supply pipe 107 is for delivery of lapping liquid.During grinding, the wafer 108 that will grind is attached on the grinding head 103, this wafer is to be ground to face down, provide downforce at grinding head 103, wafer 108 is pressed on the grinding pad 102, when rotating under the drive of rotating disk 101 at motor of grinding pad 102 posted on the surface, grinding head 103 also rotates under the drive of chuck in the same way, grinds the profile of inclination with the prevention wafer.Simultaneously, diamond arrangement dish 104 rotates under the drive of chuck, is used for striking off the surface of grinding pad 102; Lapping liquid is transported on the grinding pad 102 by lapping liquid supply pipe 107, and under the acting in conjunction that grinding head 103, grinding pad 102, rotating disk 101 rotate, lapping liquid is evenly distributed on the grinding pad because of centrifugal force.Ground formation one deck fluid film between wafer 108 and the grinding pad 102, chemical composition in this tunic is ground wafer 108 with quilt chemical reactions is taken place, insoluble matter is converted into lyotrope matter (chemical reaction process), by mechanical friction these lyotropes are removed from polished surface then, taken away (mechanical removal process) by flowing liquid, so just combine mechanism and chemical reaction with the surface removal of wafer 108.Because the local grinding rate of crystal column surface projection and depression is different, finally can reach good overall planarization effect.
Yet, in chemical mechanical planarization process, grinding head 103 and diamond arrangement dish 104 all can be done movement at grinding pad, if the position of diamond arrangement dish is deviation to some extent, will cause both to collide mutually, the particle that thereupon has the frictional impact generation drops on grinding pad, causes wafer scratch even fragmentation, has a strong impact on the yield rate of product.
Summary of the invention
The invention provides a kind of chemical mechanical polishing device, to solve the problem that grinding head and diamond arrangement dish collide mutually in the existing chemical mechanical polishing device.
Chemical mechanical polishing device provided by the invention comprises:
Rotating disk and be fixedly set in grinding pad on the described rotating disk;
Be used for the grinding head of fixing wafer to be ground, described grinding head is positioned on the described grinding pad, and described grinding head is provided with first magnetic material; And
Diamond arrangement dish, be positioned on the described grinding pad, diamond grains and second magnetic material that described diamond arrangement dish comprises the diamond fixed disk and is fixed in described diamond fixed disk, described diamond grains is positioned at described diamond fixed disk towards the surface of described grinding pad, and the polarity of described second magnetic material is identical with the polarity of described first magnetic material.
Further, described first magnetic material is arranged on described grinding head inside, and is positioned on the one side relative with described wafer place face on the described grinding head.
Further, described first magnetic material is cylindrical.
Further, described first magnetic material is annulated column shape.
Further, described first magnetic material is square.
Further, described first magnetic material is arranged on described grinding head outside, and around described grinding head.
Further, described first magnetic material is annulated column shape.
Further, the difference of the interior ring radius of described first magnetic material and outer shroud radius is 1～3cm.
Further, described second magnetic material is arranged on described diamond fixed disk inside, and is positioned on the one side relative with described diamond grains place face on the described diamond fixed disk.
Further, described second magnetic material is cylindrical.
Further, described second magnetic material is annulated column shape.
Further, described second magnetic material is square.
Further, described second magnetic material is arranged on described diamond fixed disk outside, and around described diamond fixed disk.
Further, described second magnetic material is annulated column shape.
Further, the material of described first magnetic material and described second magnetic material is a kind of or its combination in iron, cobalt, the nickel.
Further, described chemical mechanical polishing device also comprises the lapping liquid supply pipe, and described lapping liquid supply pipe is arranged at described grinding pad top.
Accordingly, the present invention also provides a kind of chemical and mechanical grinding method, adopts above-mentioned chemical mechanical polishing device that wafer is carried out cmp.
Compared with prior art, the present invention has the following advantages:
1, the present invention is by arranging first magnetic material at grinding head, and second magnetic material of identical polar is set at diamond arrangement dish, utilize principle of same-sex repulsion, prevent that grinding head and diamond arrangement dish from bumping against, thereby reduce the scratch of wafer macroscopic view, wearing and tearing even fragmentation, improved the efficient of cmp and the yield rate of wafer;
2, chemical mechanical polishing device of the present invention can improve on the basis of existing apparatus, and method is simple, saves the renewal of the equipment cost, can improve the stability of board simultaneously.
Description of drawings
Fig. 1 is the schematic diagram of existing chemical mechanical polishing device.
The schematic diagram of the chemical mechanical polishing device that Fig. 2 provides for one embodiment of the invention.
Fig. 3 is the position view of first polar material and second polar material in one embodiment of the invention.
Fig. 4 is the position view of first polar material and second polar material in one embodiment of the invention.
Fig. 5 is the position view of first polar material and second polar material in one embodiment of the invention.
The specific embodiment
Below in conjunction with the drawings and specific embodiments chemical mechanical polishing device and the Ginding process that the present invention proposes is described in further details.According to the following describes and claims, advantages and features of the invention will be clearer, it should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of chemical mechanical polishing device and method thereof are provided, grinding head in the described chemical mechanical polishing device is provided with first magnetic material, diamond arrangement dish is provided with second magnetic material of identical polar, the same sex is repelled each other and has been avoided grinding head and diamond arrangement dish to bump against each other, thereby improves the yield rate of wafer.
Please refer to Fig. 2, the schematic diagram of the chemical mechanical polishing device that it provides for one embodiment of the invention, as shown in Figure 2, chemical mechanical polishing device comprises:
Rotating disk 201 and be fixedly set in grinding pad 202 on the described rotating disk 201;
Be used for the grinding head 203 of fixing wafer 208 to be ground, described grinding head 203 is positioned on the described grinding pad 202, and described grinding head 203 is provided with first magnetic material 209; And
The material of described first magnetic material 209 and second magnetic material 210 is a kind of or its combination in iron, cobalt, the nickel.In addition, described chemical mechanical polishing device also comprises lapping liquid supply pipe 207, and described lapping liquid supply pipe 207 is arranged at described grinding pad 202 tops.
Described grinding head 203 and described diamond arrangement dish 204 move at described grinding pad 202 under the effect of plant machinery power, both relatively near the time, second magnetic material 210 on first magnetic material 209 on the described grinding head 203 and the described diamond arrangement dish 204 repels mutually because polarity is identical, when repulsion and plant machinery power reach balance, grinding head 203 and diamond arrangement dish 204 can not be close to each other, distance between grinding head 203 and the diamond arrangement dish 204 should can move to grinding pad 202 Anywhere to guarantee diamond arrangement dish 204 less than the radius of grinding pad 202 at this moment.
In the present embodiment, in conjunction with Fig. 2, described first magnetic material 209 is cylindrical with being shaped as of described second magnetic material 210, is embedded in respectively in described grinding head 203 and the described diamond fixed disk 205; Described first magnetic material 209 is arranged in the described grinding head 203, and is positioned on the one side relative with described wafer 208 place faces on the described grinding head 203; Described second magnetic material 210 is arranged in the described diamond fixed disk 205, and is positioned on the one side relative with described diamond grains 206 place faces on the described diamond fixed disk 205.The size of described first magnetic material 209 and described second magnetic material 210 is decided by size and the needed magnetic size of concrete grinding head 203 and diamond fixed disk 205.Described first magnetic material 209 and second magnetic material 210 also can be annulated column shape (Fig. 3 a and Fig. 3 b), square (Fig. 3 a and Fig. 3 b), or other shapes commonly used.Can change first magnetic material and second magnetic material position in grinding head 203 and diamond fixed disk 205 in other embodiments according to the demand of equipment or technology, simultaneously, second magnetic material also can be arranged on other places on the diamond arrangement dish 204.
In another specific embodiment of the present invention, on the basis of a last embodiment, described first magnetic material 209 is arranged at described grinding head 203 outsides, and around described grinding head 203, described second magnetic material 210 is arranged at described diamond fixed disk 205 outsides, and around described diamond fixed disk 205, described first magnetic material 209 and second magnetic material 210 all are annulated column shape, and vertical view is shown in Fig. 5 a and 5b.Compare with a last embodiment, need not transform the inside of described grinding head 203 and described diamond fixed disk 205, only first magnetic material 209 need be set externally and second magnetic material 210 gets final product, can further save the improvement cost of equipment, but the shape of first magnetic material 209 and second magnetic material 210 is restricted.Second magnetic material 210 also can be arranged on other places that 204 outsides are coiled in the diamond arrangement according to the demand of physical device and technology.The interior ring radius of described first magnetic material 209 and the difference of outer shroud radius are 1～3cm, 1cm for example, and 2cm, 3cm, the best is 2cm.
In sum, the present invention is by arranging first magnetic material at grinding head, and second magnetic material of identical polar is set at diamond arrangement dish, utilize principle of same-sex repulsion, prevent that grinding head and diamond arrangement dish from bumping against, thereby reduce the scratch of wafer macroscopic view, wearing and tearing even fragmentation, improved the efficient of cmp and the yield rate of wafer; Chemical mechanical polishing device of the present invention can improve on the basis of existing apparatus, and method is simple, saves the renewal of the equipment cost, can improve the stability of board simultaneously.
Foregoing description only is the description to preferred embodiment of the present invention, is not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection domain of claims.
Claims (17)
1. a chemical mechanical polishing device is characterized in that, comprising:
Rotating disk and be fixedly set in grinding pad on the described rotating disk;
Be used for the grinding head of fixing wafer to be ground, described grinding head is positioned on the described grinding pad, and described grinding head is provided with first magnetic material; And
Diamond arrangement dish, be positioned on the described grinding pad, diamond grains and second magnetic material that described diamond arrangement dish comprises the diamond fixed disk and is fixed in described diamond fixed disk, described diamond grains is positioned at described diamond fixed disk towards the surface of described grinding pad, and the polarity of described second magnetic material is identical with the polarity of described first magnetic material.
2. chemical mechanical polishing device as claimed in claim 1 is characterized in that, described first magnetic material is arranged on described grinding head inside, and is positioned on the one side relative with described wafer place face on the described grinding head.
3. chemical mechanical polishing device as claimed in claim 2 is characterized in that, described first magnetic material is cylindrical.
4. chemical mechanical polishing device as claimed in claim 2 is characterized in that, described first magnetic material is annulated column shape.
5. chemical mechanical polishing device as claimed in claim 2 is characterized in that, described first magnetic material is square.
6. chemical mechanical polishing device as claimed in claim 1 is characterized in that, described first magnetic material is arranged on described grinding head outside, and around described grinding head.
7. chemical mechanical polishing device as claimed in claim 6 is characterized in that, described first magnetic material is annulated column shape.
8. chemical mechanical polishing device as claimed in claim 7 is characterized in that, the interior ring radius of described first magnetic material and the difference of outer shroud radius are 1～3cm.
9. chemical mechanical polishing device as claimed in claim 1 is characterized in that, described second magnetic material is arranged on described diamond fixed disk inside, and is positioned on the one side relative with described diamond grains place face on the described diamond fixed disk.
10. chemical mechanical polishing device as claimed in claim 9 is characterized in that, described second magnetic material is cylindrical.
11. chemical mechanical polishing device as claimed in claim 9 is characterized in that, described second magnetic material is annulated column shape.
12. chemical mechanical polishing device as claimed in claim 9 is characterized in that, described second magnetic material is square.
13. chemical mechanical polishing device as claimed in claim 1 is characterized in that, described second magnetic material is arranged on described diamond fixed disk outside, and around described diamond fixed disk.
14. chemical mechanical polishing device as claimed in claim 13 is characterized in that, described second magnetic material is annulated column shape.
15. chemical mechanical polishing device as claimed in claim 1 is characterized in that, the material of described first magnetic material and described second magnetic material is a kind of or its combination in iron, cobalt, the nickel.
16. as any described chemical mechanical polishing device in the claim 1 to 15, it is characterized in that, also comprise the lapping liquid supply pipe, described lapping liquid supply pipe is arranged at described grinding pad top.
17. a chemical and mechanical grinding method is characterized in that, the chemical mechanical polishing device of right to use requirement 1～16 carries out cmp to wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013101222476A CN103273414A (en) | 2013-04-09 | 2013-04-09 | Chemical-mechanical polishing device and method thereof |
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| CN2013101222476A CN103273414A (en) | 2013-04-09 | 2013-04-09 | Chemical-mechanical polishing device and method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753379A (en) * | 2013-11-22 | 2014-04-30 | 上海华力微电子有限公司 | Grinding speed detection apparatus, grinding device and method for detecting grinding speed in real time |
| CN103878687A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | System for preventing wafer from being scratched by grinding mat |
| CN105437054A (en) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method and device |
| CN105729307A (en) * | 2014-12-26 | 2016-07-06 | 株式会社荏原制作所 | Polishing apparatus and controlling the same |
| CN111168174A (en) * | 2020-02-17 | 2020-05-19 | 山东大学 | A kind of electromagnetic composite tool grinding head, electrolytic grinding processing device and method |
| CN112658981A (en) * | 2020-12-28 | 2021-04-16 | 郑州铁路职业技术学院 | Chemical polishing machine for surface treatment of parts |
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| US6039635A (en) * | 1997-08-29 | 2000-03-21 | Nec Corporation | Surface polishing apparatus including a dresser |
| CN201705096U (en) * | 2010-06-17 | 2011-01-12 | 金纪阳 | Door closing bumper |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753379A (en) * | 2013-11-22 | 2014-04-30 | 上海华力微电子有限公司 | Grinding speed detection apparatus, grinding device and method for detecting grinding speed in real time |
| CN103878687A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | System for preventing wafer from being scratched by grinding mat |
| CN105437054A (en) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method and device |
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| CN105729307B (en) * | 2014-12-26 | 2019-08-06 | 株式会社荏原制作所 | Grinding device and its control method |
| CN111168174A (en) * | 2020-02-17 | 2020-05-19 | 山东大学 | A kind of electromagnetic composite tool grinding head, electrolytic grinding processing device and method |
| CN112658981A (en) * | 2020-12-28 | 2021-04-16 | 郑州铁路职业技术学院 | Chemical polishing machine for surface treatment of parts |
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Application publication date: 20130904 |