CN103247736A - Flip-chip LED chip welding protection structure - Google Patents
Flip-chip LED chip welding protection structure Download PDFInfo
- Publication number
- CN103247736A CN103247736A CN2013101499046A CN201310149904A CN103247736A CN 103247736 A CN103247736 A CN 103247736A CN 2013101499046 A CN2013101499046 A CN 2013101499046A CN 201310149904 A CN201310149904 A CN 201310149904A CN 103247736 A CN103247736 A CN 103247736A
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- China
- Prior art keywords
- chip
- layer
- protection structure
- side wall
- flip
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- 238000003466 welding Methods 0.000 title claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009194 climbing Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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- Led Device Packages (AREA)
Abstract
本发明涉及倒装LED芯片，具体涉及其焊接保护结构。本发明的目的是防止倒装LED芯片倒装固晶焊接时P、N之间直接短路或漏电，为此给出倒装LED芯片焊接保护结构，芯片的第一侧壁既有P型层又有N型层，其特征是，第一侧壁被绝缘的钝化层从芯片底面覆盖至衬底底面。芯片倒装固晶焊接时，即使焊料外溢上爬，也由于有钝化层在芯片的侧壁进行绝缘保护，该侧的P型层和N型层就不会短路或漏电了。
The present invention relates to a flip-chip LED chip, and more particularly to a welding protection structure thereof. The purpose of the present invention is to prevent a direct short circuit or leakage between P and N during flip-chip solid crystal welding of a flip-chip LED chip, and for this purpose, a flip-chip LED chip welding protection structure is provided, wherein the first side wall of the chip has both a P-type layer and an N-type layer, and is characterized in that the first side wall is covered by an insulating passivation layer from the bottom surface of the chip to the bottom surface of the substrate. During flip-chip solid crystal welding of the chip, even if the solder overflows and climbs up, the P-type layer and the N-type layer on the side will not short-circuit or leak due to the passivation layer providing insulation protection on the side wall of the chip.
Description
Technical field
The invention relates to flip LED chips, is specifically related to its welding protection structure.
Background technology
When flip LED chips being carried out the solid brilliant welding of upside-down mounting, for example scolder such as tin cream, silver slurry may excessively be climbed up chip.Only in die bottom surface P ohmic contact layer and N ohmic contact layer are carried out the passivation insulation in the prior art; avoiding weld is to be short-circuited between the P ohmic contact layer of die bottom surface and the N ohmic contact layer; but do not consider the excessive more upper strata of climbing to of scolder meeting; so the insulation protection measure is not implemented on the more upper strata to the chip sidewall; and the existing P type of the sidewall that has on chip layer; the N-type layer is arranged again; for example the sidewall of P electrode one side is followed successively by the P ohmic contact layer from die bottom surface to chip end face; the P semiconductor layer; active illuminating layer; N semiconductor layer and substrate; so when carrying out the welding of P electrode; if the excessive sidewall of climbing up this side of scolder touches the N semiconductor layer, will cause P; direct short-circuit or electric leakage between the N.
Summary of the invention
The purpose of the invention is direct short-circuit or electric leakage between P, the N when preventing the solid brilliant welding of flip LED chips upside-down mounting.
Provide flip LED chips welding protection structure, the existing P type of the first side wall of chip layer has the N-type layer again, it is characterized in that for this reason, and the insulated passivation layer of the first side wall covers to the substrate bottom surface from die bottom surface.Before being passivated layer covering, the first side wall begins to be etched to the substrate bottom surface from die bottom surface.The passivation layer outside that covers the first side wall flushes in the substrate of homonymy.The passivation material that covers the first side wall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
Second sidewall that P type layer and N-type layer are not arranged simultaneously of chip also insulated passivation layer covers to the substrate bottom surface from die bottom surface.Before being passivated layer covering, second sidewall begins to be etched to the substrate bottom surface from die bottom surface.The passivation layer outside that covers second sidewall flushes in the substrate of homonymy.The passivation material that covers second sidewall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
Beneficial effect: during the solid brilliant welding of flip-chip, swash even scolder is excessive, owing to there is passivation layer to carry out insulation protection at the sidewall of chip, the P type layer of this side and N-type layer just can short circuits or have been leaked electricity yet.Be preferably in passivation layer and cover first etching sidewall before, the overlapping operation of passivation layer is easier to realize like this, and can allow the passivation layer outside flush in the substrate of homonymy, thereby makes chip sides neat.
Description of drawings
Fig. 1 is flip LED chips welding protection structural representation.
Embodiment
As Fig. 1, flip LED chips comprises substrate 1, N semiconductor layer 2, N ohmic contact layer 3, active illuminating layer 4, P semiconductor layer 5 and P ohmic contact layer 6.In die bottom surface P ohmic contact layer and N ohmic contact layer are carried out the passivation insulation and form passivation layer 80, avoiding weld is to be short-circuited between the P ohmic contact layer 6 of die bottom surface and the N ohmic contact layer 3, and this is prior art.
Among the figure, left side wall is the first side wall, and right side wall is second sidewall.As seen from the figure: the existing P type of the first side wall layer 5,6 has N-type layer 2 again; Second sidewall has N- type layer 2,3 but do not have P type layer, belongs to the sidewall that P type layer and N-type layer are not arranged simultaneously.
The first side wall begins to be etched to substrate 1 bottom surface from die bottom surface, and insulated passivation layer 81 covers to substrate 1 bottom surface from die bottom surface then, and passivation layer 81 outsides that cover the first side wall flush in the substrate 1 of homonymy; Second sidewall begins to be etched to substrate 1 bottom surface from die bottom surface, and insulated passivation layer 82 covers to substrate 1 bottom surface from die bottom surface then, and passivation layer 82 outsides that cover second sidewall flush in the substrate 1 of homonymy.So far form the welding protection structure.
Claims (8)
1. flip LED chips welding protection structure, the existing P type of the first side wall of chip layer has the N-type layer again, it is characterized in that, and the insulated passivation layer of the first side wall covers to the substrate bottom surface from die bottom surface.
2. flip LED chips welding protection structure according to claim 1 is characterized in that, before being passivated layer covering, the first side wall begins to be etched to the substrate bottom surface from die bottom surface.
3. flip LED chips welding protection structure according to claim 2 is characterized in that, the passivation layer outside that covers the first side wall flushes in the substrate of homonymy.
4. flip LED chips welding protection structure according to claim 1 is characterized in that, second sidewall that P type layer and N-type layer are not arranged simultaneously of chip also insulated passivation layer covers to the substrate bottom surface from die bottom surface.
5. flip LED chips welding protection structure according to claim 4 is characterized in that, before being passivated layer covering, second sidewall begins to be etched to the substrate bottom surface from die bottom surface.
6. flip LED chips welding protection structure according to claim 5 is characterized in that, the passivation layer outside that covers second sidewall flushes in the substrate of homonymy.
7. flip LED chips welding protection structure according to claim 1 is characterized in that, the passivation material that covers the first side wall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
8. flip LED chips welding protection structure according to claim 4 is characterized in that, the passivation material that covers second sidewall is SiO
2, SiN
x, SiNO
xOr Al
2O
3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101499046A CN103247736A (en) | 2013-04-26 | 2013-04-26 | Flip-chip LED chip welding protection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101499046A CN103247736A (en) | 2013-04-26 | 2013-04-26 | Flip-chip LED chip welding protection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103247736A true CN103247736A (en) | 2013-08-14 |
Family
ID=48927090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101499046A Pending CN103247736A (en) | 2013-04-26 | 2013-04-26 | Flip-chip LED chip welding protection structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103247736A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505047A (en) * | 2015-09-07 | 2017-03-15 | 中芯国际集成电路制造（天津）有限公司 | Chip-packaging structure and preparation method thereof, electrostatic powder spraying device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205224A (en) * | 1996-01-25 | 1997-08-05 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting element |
| CN1582503A (en) * | 2001-07-23 | 2005-02-16 | 克里公司 | Light emitting diodes including modifications for submount bonding and manufacturing methods therefor |
| CN101512783A (en) * | 2006-05-02 | 2009-08-19 | 三菱化学株式会社 | Semiconductor light emitting element |
| CN101904018A (en) * | 2007-12-18 | 2010-12-01 | 首尔Opto仪器股份有限公司 | Light emitting device and manufacturing method thereof |
| CN102067346A (en) * | 2008-08-19 | 2011-05-18 | 晶能光电（江西）有限公司 | Semiconductor light-emitting device with passivation layer |
| CN203277488U (en) * | 2013-04-26 | 2013-11-06 | 东莞市福地电子材料有限公司 | Flip-chip LED chip welding protection structure |
-
2013
- 2013-04-26 CN CN2013101499046A patent/CN103247736A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205224A (en) * | 1996-01-25 | 1997-08-05 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting element |
| CN1582503A (en) * | 2001-07-23 | 2005-02-16 | 克里公司 | Light emitting diodes including modifications for submount bonding and manufacturing methods therefor |
| CN101512783A (en) * | 2006-05-02 | 2009-08-19 | 三菱化学株式会社 | Semiconductor light emitting element |
| CN101904018A (en) * | 2007-12-18 | 2010-12-01 | 首尔Opto仪器股份有限公司 | Light emitting device and manufacturing method thereof |
| CN102067346A (en) * | 2008-08-19 | 2011-05-18 | 晶能光电（江西）有限公司 | Semiconductor light-emitting device with passivation layer |
| CN203277488U (en) * | 2013-04-26 | 2013-11-06 | 东莞市福地电子材料有限公司 | Flip-chip LED chip welding protection structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505047A (en) * | 2015-09-07 | 2017-03-15 | 中芯国际集成电路制造（天津）有限公司 | Chip-packaging structure and preparation method thereof, electrostatic powder spraying device |
| CN106505047B (en) * | 2015-09-07 | 2019-02-22 | 中芯国际集成电路制造（天津）有限公司 | Chip-packaging structure and preparation method thereof, electrostatic powder spraying device |
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Application publication date: 20130814 |