Embodiment
10,10 ', 20,20 ' ~ dot structure;
100 ~ substrate;
101 ~ insulating barrier;
102 ~ auxiliary electrode layer;
104 ~ the first insulating barriers;
105 ~ the first openings;
106 ~ bottom electrode;
107 ~ the second insulating barriers;
107a ~ the second opening; 108 ~ organic luminous layer;
110 ~ top electrode;
112 ~ laser processing procedure;
115,115 ' ~ three opening/electrode contact window;
200 ~ tandem sub-pixel area;
L ~ laser aid;
P ~ sub-pixel area.
Embodiment
The manufacture method of the dot structure for organic light emitting display of the embodiment of the present invention is below described.But, embodiment provided by the present invention can be understood easily only for illustration made from ad hoc approach and using the present invention, and be not used to limit to scope of the present invention.
Please refer to Figure 1A to 1D, it shows according to an embodiment of the invention for the manufacture method generalized section of the dot structure 10 of organic light emitting display.Please refer to Figure 1A, a substrate 100 be provided, its have multiple tandem sub-pixel area arranged in parallel 200 (as Fig. 3 indicate), to form array pixel district (also referred to as viewing area or active area).Be understandable that each tandem sub-pixel area 200 comprises multiple adjacent sub-pixel area P.Moreover the quantity of tandem sub-pixel area 200 and the quantity of each sub-pixel district, tandem sub-pixel area 200 P depend on design requirement, and are not defined in as shown in Figure 3.Herein, in order to simplicity of illustration, only show the single sub-pixel structure with a sub-pixel area P.In the present embodiment, substrate 100 can be made up of glass, quartz or plastic cement, it has multiple thin-film transistor (not illustrating), and it corresponds to pixelated array district, and therefore substrate 100 is also referred to as thin-film transistor array base-plate.Moreover, the top of thin-film transistor covers at least one insulating barrier, such as internal layer dielectric (interlayer dielectric, ILD) (passivation) layer or its combination are protected in layer, metal interlevel dielectric (inter-metal dielectric, IMD) layer, flatness layer, passivation.Herein, in order to simplify accompanying drawing, only represent with a smooth insulating barrier 101.
Then, by deposition technique, such as chemical vapour deposition (CVD) (chemical vapor deposition, or sputter (sputtering) processing procedure CVD), insulating barrier 101 is formed an auxiliary electrode layer 102, it corresponds at least one sub-pixel area P of above-mentioned tandem sub-pixel area 200, as shown in Figure 1A.In another embodiment, auxiliary electrode layer 102 may correspond to each sub-pixel area P in pixelated array district.Auxiliary electrode layer 102 can be coupled to one first supply voltage (not illustrating), and the wherein source/drain electrode of thin-film transistor corresponding in substrate 100 is coupled to a second source voltage (not illustrating), wherein there is a voltage difference in second source voltage and the first supply voltage.In one embodiment, auxiliary electrode layer 102 can be made up of a conductive layer, such as, aluminium, silver, gold, nickel, chromium, copper, titanium, molybdenum, indium tin oxide, indium-zinc oxide, aluminium zinc oxide, zinc oxide etc., or other conventional metals, transparent conductive oxide electrode material or its combination, alloy.
By deposition technique, such as CVD, physical vapour deposition (PVD) (physical vapor deposition, PVD) or wet process (Solution process) etc., form one first insulating barrier 104 on the substrate 100 and cover the insulating barrier 101 of auxiliary electrode layer 102 and below.First insulating barrier 104 is as a passivation protection (passivation) layer, and can by the nitrogen oxide (SiO of organic substance (such as, photoresist), silica, silicon nitride, silicon
xn
y), metal oxide (such as, aluminium oxide) or its combination formed.Afterwards, by photoetching and etch process, in the first insulating barrier 104, form at least one first opening 105, expose the auxiliary electrode layer 102 of below with local.In one embodiment, the first opening 105 can be a hole.In addition, in other embodiments, the first opening 105 also can be a stripe shape groove, and it can extend across multiple sub-pixel area P, in order to expose the auxiliary electrode layer 102 being positioned at other sub-pixel area P.
Please refer to Figure 1B, corresponding formation one lower electrode layer 106 on first insulating barrier 104 of each sub-pixel area P of each tandem sub-pixel area 200, using the bottom electrode (male or female) as follow-up Organic Light Emitting Diode.The manufacture method of lower electrode layer 106 and material can be similar or identical in auxiliary electrode layer 102.Moreover lower electrode layer 106 is another source/drains being coupled to thin-film transistor corresponding in substrate 100.
Referring again to Figure 1B, each lower electrode layer 106 forms one second insulating barrier 107, and it has one second opening 107a, with the bottom electrode 106a of exposed portion.Then, above each lower electrode layer 106, form an organic luminous layer 108, to cover the first insulating barrier 104 and the second insulating barrier 107, and insert the first opening 105 and the second opening 107a, organic luminous layer 108 is contacted with auxiliary electrode 102 and bottom electrode 106.The material of the second insulating barrier 107 can be similar or identical in the first insulating barrier 104.The thickness of organic luminous layer 108 is at 600 dusts
to the scope of 4000 dusts, and be generally a sandwich construction, comprise: a hole injection layer (hole injection layer, HIL) a, hole transmission layer (hole transport layer, HTL), active (active) layer, an electron transfer layer (electron transport layer, and an electron injecting layer (electron injection layer, EIL) ETL).Herein in order to simplify accompanying drawing, only represent with single layer structure.
Please refer to Fig. 1 C, by deposition technique, such as PVD, organic luminous layer 108 is formed a upper electrode layer 110, using the top electrode (negative electrode or anode) as follow-up Organic Light Emitting Diode.In the present embodiment, upper electrode layer 110 can by metal (such as, magnesium, silver, lithium, calcium, silver, gold or its alloy), transparent conductive oxide (transparent conductive oxide, TCO) (such as, indium tin oxide (indium tin oxide, or indium-zinc oxide (indium zinc oxide ITO), IZO), aluminium zinc oxide (aluminum-zinc oxide, AZO), zinc oxide (zinc oxide, ZnO)) or its combination formed.Afterwards, provide a laser aid L, to implement a laser processing procedure 112 to the upper electrode layer 110 directly over the first opening 105 and organic luminous layer 108, such as, laser welding (laser welding) processing procedure.
Please refer to Fig. 1 D, after carrying out laser processing procedure 112, can form at least one 3rd opening 115 in upper electrode layer 110 directly over the first opening 105 and organic luminous layer 108, it exposes the auxiliary electrode layer 102 bottom the first opening 105.Meanwhile, laser processing procedure 112 make upper electrode layer 110 via the 3rd opening 115 with the first opening 105 bottom auxiliary electrode layer 102 welding and form electric connection.That is upper electrode layer 110 is coupled to the first supply voltage through auxiliary electrode layer 102.Thus, the manufacture of the dot structure 10 for organic light emitting display of the present embodiment is just completed.In the present embodiment, in laser processing procedure 112, the wavelength of laser and energy are respectively 532nm and 0.2mJ, but the kind of laser, wavelength and energy can have multiple choices and collocation, and the present embodiment is only wherein a kind of combination.Moreover the 3rd opening 115 is as electrode contact window, and it can be a hole.In other embodiments, the 3rd opening 115 also can be a stripe shape groove, and it can extend across multiple sub-pixel area P, in order to expose the auxiliary electrode layer 102 bottom the first opening 105 being positioned at other sub-pixel area P.
Please refer to Fig. 1 E, it shows according to another embodiment of the present invention for dot structure 20 generalized section of organic light emitting display.Wherein, the parts being same as Figure 1A to 1D use identical label, and also the description thereof will be omitted.In the present embodiment, the manufacture method of dot structure 20 is similar in appearance to dot structure 10, and difference is that lower electrode layer 106 and auxiliary electrode layer 102 can be made up of the same conductive layer of patterning, makes lower electrode layer 106 and auxiliary electrode layer 102 be positioned at same layer position.In this case, lower electrode layer 106 can cover by the first insulating barrier 104, and the first insulating barrier 104 can have the opening exposing lower electrode layer 106, and the organic luminous layer 108 of follow-up formation can be in contact with it.
Please refer to Fig. 2 A to 2C, it shows according to another embodiment of the present invention for the manufacture method generalized section of the dot structure 10 ' of organic light emitting display, and the parts being wherein same as Figure 1A to 1D use identical label, and also the description thereof will be omitted.Please refer to Fig. 2 A, provide a structure, it is same as the structure shown in Figure 1B, and this structure comprises a substrate 100 with sub-pixel area P.One auxiliary electrode layer 102 is positioned on the substrate 100 of sub-pixel area P.One first insulating barrier 104 to be positioned on substrate 100 and to cover auxiliary electrode layer 102, wherein has at least one first opening 105 in the first insulating barrier 104, exposes auxiliary electrode layer 102 with local.One lower electrode layer 106 (that is, a bottom electrode (or anode) of Organic Light Emitting Diode) is positioned on first insulating barrier 104 of sub-pixel area P.One organic luminous layer 108 to be formed on the second insulating barrier 107 above lower electrode layer 106 and to insert the first opening 105 and the second opening 107a.In the present embodiment, said structure is formed by the fabrication steps of carrying out as shown in Figure 1A to 1B.Then, a laser aid L is provided, to implement a laser processing procedure 112 to the organic luminous layer 108 directly over the first opening 105.In the present embodiment, in laser processing procedure 112, the wavelength of laser is 266nm, and energy is in the scope of 50 μ J to 100 μ J, but the kind of laser, wavelength and energy can have multiple choices and collocation, and the present embodiment is wherein a kind of combination.
Please refer to Fig. 2 B, after carrying out laser processing procedure 112, at least one 3rd opening 115 ' can be formed, to expose the auxiliary electrode layer 102 bottom the first opening 105 in the organic luminous layer 108 directly over the first opening 105.3rd opening 115 ' is as electrode contact window, and it can be a hole.In other embodiments, the 3rd opening 115 ' also can be a stripe shape groove, and it can extend across multiple sub-pixel area P, in order to expose the auxiliary electrode layer 102 bottom the first opening 105 being positioned at other sub-pixel area P.
Please refer to Fig. 2 C, organic luminous layer 108 forms a upper electrode layer 110 (namely, one top electrode (or negative electrode) of Organic Light Emitting Diode) and insert the 3rd opening 115 ', upper electrode layer 110 is electrically connected with the auxiliary electrode layer 102 exposed.That is upper electrode layer 110 is coupled to the first supply voltage through auxiliary electrode layer 102.Thus, the manufacture of the dot structure 10 ' for organic light emitting display of the present embodiment is just completed.
Please refer to Fig. 2 D, it shows according to another embodiment of the present invention for the dot structure 20 ' generalized section of organic light emitting display.Wherein, the parts being same as Fig. 2 A to 2C use identical label, and also the description thereof will be omitted.In the present embodiment, the manufacture method of dot structure 20 ' is similar in appearance to dot structure 10 ', difference is that lower electrode layer 106 and auxiliary electrode layer 102 can be made up of the same conductive layer of patterning, makes lower electrode layer 106 and auxiliary electrode layer 102 be positioned at same layer position.In this case, lower electrode layer 106 can cover by the first insulating barrier 104, and the first insulating barrier 104 can have the opening exposing lower electrode layer 106, and the organic luminous layer 108 of follow-up formation can be in contact with it.
Please refer to Fig. 3, it shows the arrangement schematic diagram of electrode contact window according to an embodiment of the invention, and the parts be wherein same as in Figure 1A to 1D use identical label and the description thereof will be omitted.In the present embodiment, in dot structure 10, can by laser processing procedure organic luminous layer 108 (as Fig. 1 C to 1D indicate) in form multiple electrode contact window (namely, 3rd opening) 115, and electrode contact window 115 can rule or at least one tandem sub-pixel area 200 of being arranged in brokenly in multiple tandem sub-pixel area 200.For example, electrode contact window 115 can be arranged in each tandem sub-pixel area 200 regularly, and electrode contact window 115 adjacent in each tandem sub-pixel area 200 do not had at least one sub-pixel area P of electrode contact window 115 separate.Moreover each sub-pixel area P shows identical color at least one tandem sub-pixel area 200, such as red, green, blue or white.In other embodiments, each tandem sub-pixel area 200 can comprise the sub-pixel area P showing different colours.
Please refer to Fig. 4, it shows the arrangement schematic diagram of electrode contact window according to another embodiment of the present invention, and the parts be wherein same as in Fig. 3 use identical label and the description thereof will be omitted.In the present embodiment, in dot structure 10, electrode contact window 115 can be arranged in each sub-pixel area P of at least two tandem sub-pixel area 200 regularly, and above-mentioned at least two tandem sub-pixel area 200 do not had at least one tandem sub-pixel area 200 of electrode contact window 115 separate.
Please refer to Fig. 5, it shows the arrangement schematic diagram according to the present invention's electrode contact window of another embodiment again, and the parts be wherein same as in Fig. 3 use identical label and the description thereof will be omitted.In the present embodiment, in dot structure 10, electrode contact window 115 can be arranged in each tandem sub-pixel area 200 brokenly.Moreover electrode contact window 115 can be stripe shape groove, and extends across multiple sub-pixel area P.
Be understandable that the arrangement mode of electrode contact window 115 in Fig. 3 to 5 may be implemented in the dot structure 20,10 ' and 20 ' in Fig. 1 E, 2C and 2D.Moreover, should be noted that the arrangement of electrode contact window 115 can be depending on design requirement, and be not limited to the arrangement mode of electrode contact window 115 in Fig. 3 to 5.
According to above-described embodiment, in the viewing area of organic light emitting display, the top electrode of Organic Light Emitting Diode can pass through electrode contact window and auxiliary electrode and is coupled to a supply voltage, therefore can pass through this supply voltage to suppress current resistor pressure drop effect.That is, between center pixel district, viewing area and surrounding pixel district, the difference of brightness is minimized, and then improves brightness uniformity.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when doing a little amendment and perfect, therefore protection scope of the present invention is when being as the criterion of defining with claims.