CN103247520A - Method for preparing grapheme on basis of controlling ion implantation energy - Google Patents

Abstract

The invention provides a method for preparing graphene based on controlling the energy of ion implantation. According to the method of the present invention, first, carbon ions are implanted into the catalytic substrate based on at least one type of implantation energy; subsequently, the catalytic substrate implanted with carbon ions is annealed to precipitate the implanted carbon ions, and At least one graphene film layer is formed on the bottom surface; finally, the catalytic substrate having formed at least one graphene film layer structure is removed to obtain at least one graphene film layer. The graphene film prepared by this method is of good quality, large in size, and the number of layers is controllable; compared with the SiC sublimation method, the graphene prepared by this method is easy to transfer; compared with the chemical vapor deposition method, the graphite prepared by this method The number of ene layers is controllable.

Description

Method for preparing graphene based on controlling the energy of ion implantation

technical field

The invention relates to the field of graphene, in particular to a method for preparing graphene based on controlling the energy of ion implantation.

Background technique

In 2004, two scientists from the University of Manchester in the United Kingdom discovered graphene using the method of micromechanical exfoliation, and won the Nobel Prize in Physics in 2010. Since the carrier mobility in graphene is as high as 2*10 ⁵ cm ² ·V ^-1 , its mobility is much higher than that of silicon materials used in large-scale applications in the semiconductor industry, so it is considered to be a substitute for silicon in future nanoelectronic devices By. In addition, graphene is also widely used in the fields of light and electricity, for example, graphene-based lithium-ion batteries, solar cells, gas detectors and some devices. However, the application of graphene in the fields of optics and electricity is based on large-area graphene films with a controllable number of layers.

At present, the methods for preparing graphene mainly include micromechanical exfoliation, SiC sublimation method, chemical vapor deposition and graphite oxide reduction method. Among them, the micromechanical exfoliation method can prepare high-quality graphene, but the area of the graphene prepared by this method is less than 1mm×1mm, which can only be used for basic experimental research; the graphene prepared by the SiC sublimation method is greatly affected by the substrate. The number of layers is not uniform, and the substrate transfer cannot be carried out; although the chemical vapor deposition method can prepare a large-area graphene film and is easy to transfer the substrate, the controllability of the graphene film thickness obtained by this method is poor, and nickel metal A multilayer film with uneven thickness will grow on copper, while only a single-layer film and a small amount of double-layer film can grow on copper.

Contents of the invention

In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for preparing graphene based on controlling the energy of ion implantation, so as to obtain a graphene film with good quality, large size and controllable number of layers.

In order to achieve the above object and other related objects, the present invention provides a method for preparing graphene based on controlling the energy of ion implantation, which at least includes the steps:

1) implanting carbon ions into the catalytic substrate based on at least one implant energy;

2) annealing the catalytic substrate implanted with carbon ions to separate out the implanted carbon ions, and forming at least one graphene film layer on the surface of the catalytic substrate; and

3) removing the catalytic substrate on which at least one graphene film layer has been formed to obtain at least one graphene film layer.

Preferably, the step 1) further includes: implanting carbon ions into the catalytic substrate multiple times in a manner of decreasing implantation energy.

As mentioned above, the method for preparing graphene based on controlling the energy of ion implantation of the present invention has the following beneficial effects: the prepared graphene film is of good quality, large in size, and the number of layers is controllable; compared with SiC sublimation method , the graphene prepared by this method is easy to transfer; compared with the chemical vapor deposition method, the number of graphene layers prepared by this method is controllable.

Description of drawings

1-4 are flow charts of Embodiment 1 of the method for preparing graphene based on controlling the energy of ion implantation of the present invention.

5-8 are flow charts of Embodiment 2 of the method for preparing graphene based on controlling the energy of ion implantation of the present invention.

Component designation description

10, 20 Catalytic substrate

11, 21, 22 doped layer

12, 23, 24 Graphene film layer

Detailed ways

The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

See Figures 1 through 8. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered. At the same time, terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit this specification. The practicable scope of the invention and the change or adjustment of its relative relationship shall also be regarded as the practicable scope of the present invention if there is no substantial change in the technical content.

Embodiment one:

As shown in the figure, the method for preparing graphene based on controlling the energy of ion implantation in this embodiment includes the following steps:

The first step: implanting carbon ions into the catalytic substrate based on at least one implanting energy. Wherein, the catalytic substrate includes any material with low carbon solubility, preferably including but not limited to: copper, nickel and the like.

For example, as shown in FIG. 1, carbon atoms are implanted into the copper substrate 10 based on the implantation energy E0, thus, the distribution of each carbon atom based on the implantation energy E0 forms a doped layer 11 in the copper substrate 10, as shown in FIG. 2 .

Step 2: annealing the catalytic substrate implanted with carbon ions to precipitate the implanted carbon atoms, so as to form at least one graphene film layer on the catalytic substrate surface.

For example, the annealing treatment is performed on the catalytic substrate 10 shown in FIG. 2 , so that the carbon atoms located on the catalytic substrate 10 can obtain energy, and use the copper surface to catalyze recrystallization into a graphene film layer 12 , as shown in FIG. 3 .

Step 3: removing the catalytic substrate having formed at least one graphene film layer to obtain at least one graphene film layer. Wherein, an etching solution may be used to remove the catalytic substrate having formed at least one graphene film layer structure.

For example, FeCl ₃ solution is used as an etching solution to remove the copper substrate with the structure shown in FIG. 3 to obtain a graphene film layer 12, as shown in FIG. 4 .

Embodiment two:

As shown in the figure, the method for preparing graphene based on controlling the energy of ion implantation in this embodiment includes the following steps:

The first step: implanting carbon ions into the catalytic substrate based on at least one implanting energy. Wherein, the catalytic substrate includes any material with low carbon solubility, preferably including but not limited to: copper, nickel and the like.

For example, as shown in FIG. 5, carbon atoms are first implanted into the copper substrate 20 based on the implantation energy E1, and then carbon atoms are implanted into the copper substrate 20 based on the implantation energy E2. Preferably, the energy E1>energy E2, thus, based on The distribution of carbon atoms implanted with energy E1 forms a doped layer 21 in the copper substrate 20 , and the distribution of carbon atoms based on the implanted energy E2 forms a doped layer 22 in the copper substrate 20 , as shown in FIG. 6 .

Step 2: annealing the catalytic substrate implanted with carbon ions to precipitate the implanted carbon atoms, so as to form at least one graphene film layer on the catalytic substrate surface.

For example, the catalytic substrate 20 shown in FIG. 6 is annealed, so that the carbon atoms located in the catalytic substrate 20 can obtain energy. It will precipitate out first, and use the surface of copper to catalyze recrystallization into a graphene film layer 23, and then the carbon atoms in the deeper position (that is, the carbon atoms in the doped layer 21) will also precipitate out, and this layer of carbon will first form the graphene film The layer 23 is lifted up, and then contacts with the copper surface, and facilitates the catalytic growth of the second graphene film layer 24 on the surface of the copper, as shown in FIG. 7 .

Step 3: removing the catalytic substrate having formed at least one graphene film layer to obtain at least one graphene film layer. Wherein, an etching solution may be used to remove the catalytic substrate having formed at least one graphene film layer structure.

For example, FeCl ₃ solution is used as an etching solution to remove the copper substrate with the structure shown in FIG. 7 to obtain two graphene film layers 23 and 24, as shown in FIG. 8 .

Based on the above-mentioned embodiments, those skilled in the art should understand that to prepare N (N ≥ 1) layers of graphene film layers, as long as the carbon atoms are sequentially injected with different energies on the catalytic substrate, the carbon atoms are sequentially distributed at different depths. In the catalytic substrate, and then annealed, so that the carbon atoms at different depths gain energy, the carbon atoms at the shallower depths will be precipitated first, and use the copper surface to catalyze recrystallization into a graphene film, and then the carbon atoms at the deeper positions Carbon will also be precipitated, and the carbon atoms in the deeper position will first lift up the first layer of graphene that has been crystallized, and then contact the copper surface, which will help the surface of the copper to catalyze the growth of the second layer of graphene film. Therefore, there is N types of different implanted energies can prepare N-layer graphene films, which will not be described in detail here.

In summary, the graphene film obtained by the method of preparing graphene based on controlling the energy of ion implantation of the present invention has the advantages of good quality, large size and controllable number of layers. Compared with the SiC sublimation method, the graphene prepared by this method is easy to transfer; compared with the chemical vapor deposition method, the graphene prepared by this method has the characteristics of controllable layer number. In addition, ion implantation technology and annealing technology are very mature processes in the current semiconductor industry, so this method will promote the widespread application of graphene in the semiconductor industry faster. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.

The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims (6)

1. a method for preparing graphene based on the energy of controlling ion implantation, characterized in that, the method for preparing graphene based on the energy of controlling ion implantation at least comprises steps: 1) implanting carbon ions into the catalytic substrate based on at least one implant energy; 2) annealing the catalytic substrate implanted with carbon ions to separate out the implanted carbon ions, so as to form at least one graphene film layer on the surface of the catalytic substrate; 3) removing the catalytic substrate on which at least one graphene film layer has been formed to obtain at least one graphene film layer. 2. the method for preparing graphene based on the energy of controlling ion implantation according to claim 1, is characterized in that: described step 1) also comprises: Carbon ions are implanted into the catalytic substrate multiple times in a manner of decreasing implantation energy. 3. The method for preparing graphene based on controlling the energy of ion implantation according to claim 1 or 2, characterized in that: the material of the catalytic substrate comprises a material with low carbon solubility. 4. The method for preparing graphene based on controlling the energy of ion implantation according to claim 1, characterized in that: the material of the catalytic substrate comprises copper. 5. the method for preparing graphene based on the energy of controlling ion implantation according to claim 1, is characterized in that: described step 3) also comprises: Using an etching solution to remove the catalytic substrate on which at least one graphene film layer has been formed to obtain at least one graphene film layer. 6. The method for preparing graphene based on controlling the energy of ion implantation according to claim 5, characterized in that: the etching solution comprises FeCl ₃ solution.

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