CN103245995A - 10.3 mu m-11.3 mu m transmissive long-wave infrared optical filter and preparation method - Google Patents
10.3 mu m-11.3 mu m transmissive long-wave infrared optical filter and preparation method Download PDFInfo
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- CN103245995A CN103245995A CN2013101500842A CN201310150084A CN103245995A CN 103245995 A CN103245995 A CN 103245995A CN 2013101500842 A CN2013101500842 A CN 2013101500842A CN 201310150084 A CN201310150084 A CN 201310150084A CN 103245995 A CN103245995 A CN 103245995A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 40
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 24
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 5
- 229910052786 argon Inorganic materials 0.000 claims abstract description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract 10
- 238000012544 monitoring process Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 45
- 238000001816 cooling Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 17
- 230000035699 permeability Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
本发明涉及10.3～11.3μm透过长波红外滤光片及制备方法，属于光学薄膜技术领域。该滤光片包括锗基底和长、短波通膜系；长波通膜系结构为（0.5hl0.5h）^9（0.574l1.148h0.574l）^5（0.36h0.72l0.36h）^5，中心波长7300nm；短波通膜系结构为（lh）^8，中心波长14600nm；l和h分别为硫化锌和碲化铅膜层；通过真空中加热基底，离子源通氩气下电阻蒸发在基底两侧沉积长、短波通膜系，冷却后制得。该滤光片在10.3～11.3μm透过率高，0.9～10.15μm和11.45～20μm宽截止，膜系层数较少，满足遥感探测系统使用要求；该方法简便稳定，成品率高。
The invention relates to a 10.3-11.3 μm long-wave infrared filter and a preparation method thereof, and belongs to the technical field of optical thin films. The filter includes a germanium substrate and long-wave and short-wave pass films; the long-wave pass film structure is (0.5hl0.5h)^9 (0.574l1.148h0.574l)^5 (0.36h0.72l0.36h)^5, The central wavelength is 7300nm; the short-wave pass film structure is (lh)^8, and the central wavelength is 14600nm; l and h are zinc sulfide and lead telluride film layers respectively; the substrate is heated in vacuum, and the ion source is vaporized on the substrate under argon gas. Deposit long and short wave pass films on both sides, and make it after cooling. The optical filter has high transmittance at 10.3-11.3 μm, wide cut-offs at 0.9-10.15 μm and 11.45-20 μm, fewer film layers, and meets the requirements of remote sensing detection systems; the method is simple and stable, and the yield is high.
Description
Technical field
The present invention relates to a kind of 10.3～11.3 μ m and see through LONG WAVE INFRARED optical filter and preparation method, specifically, relate to and a kind ofly have high permeability at 10.3～11.3 μ m spectral coverages, simultaneously at 0.9～10.15 μ m and the wide LONG WAVE INFRARED optical filter that ends of 11.45～20 μ m spectral coverages; Belong to optical film technology field.
Background technology
Be the optical filter of a key in the present remote sensing system at the optical filter that 10.3～11.3 μ m spectral coverages have a high permeability.In order to reduce the influence of signal noise, need in the remote sensing system light signal of 0.9～10.15 μ m and 11.45～20 μ m spectral coverages is suppressed.Therefore need that design is a kind of to have high permeability at 10.3～11.3 μ m spectral coverages badly, in 0.9～10.15 μ m and 11.45～20 wide ending of μ m spectral coverage, film quality LONG WAVE INFRARED optical filter preferably simultaneously.
Summary of the invention
A kind ofly do not have high permeability at 10.3～11.3 μ m spectral coverages at still having in the prior art, simultaneously at 0.9～10.15 μ m and the wide LONG WAVE INFRARED optical filter that ends of 11.45～20 μ m spectral coverages.The LONG WAVE INFRARED optical filter that provides a kind of 10.3～11.3 μ m to see through is provided one of purpose of the present invention, and described optical filter has high permeability at 10.3～11.3 μ m spectral coverages, simultaneously in 0.9～10.15 μ m and 11.45～20 wide ending of μ m spectral coverage.
Two of purpose of the present invention is to provide the preparation method of the LONG WAVE INFRARED optical filter that a kind of 10.3～11.3 μ m see through.
Purpose of the present invention is achieved through the following technical solutions.
A kind of 10.3～11.3 μ m see through the LONG WAVE INFRARED optical filter, and described optical filter comprises the long-pass film system of substrate, substrate one side and the short-pass film system of substrate opposite side.
Wherein, described base material is germanium, and preferred size is: long 29.5mm, and wide 1.36mm, thick 1.2mm, preferred surface smooth finish is 40/20;
Long-pass film system comprises zinc sulphide (ZnS) rete and lead telluride (PbTe) rete of alternately stack, and structure is: ^5 ^5(0.36h0.72l0.36h (0.5hl0.5h) ^9(0.574l1.148h0.574l)), and centre wavelength is 7300nm; Wherein, h is the lead telluride rete, 0.5,1.148 and 0.36 coefficient that is respectively the corresponding basic thickness of lead telluride thicknesses of layers, 0.5h expression lead telluride thicknesses of layers is 0.5 basic thickness, 1.148h expression lead telluride thicknesses of layers is 1.148 basic thickness, 0.36h expression lead telluride thicknesses of layers is 0.36 basic thickness, l is the zinc sulphide rete, 1,0.574 and 0.72 coefficient that is respectively the corresponding basic thickness of ZnS-film layer thickness, l represents that the ZnS-film layer thickness is 1 basic thickness, 0.574l expression ZnS-film layer thickness is 0.574 basic thickness, 0.72l expression ZnS-film layer thickness is 0.72 basic thickness, described basic thickness is 1/4th of optical thickness centre wavelength, the periodicity of basic membrane stack (0.5hl0.5h) is 9, and the periodicity of basic membrane stack (0.574l1.148h0.574l) and basic membrane stack (0.36h0.72l0.36h) is 5.
Employing TFCalc software is optimized the structure that described long-pass film is, obtains preferred long-pass film to be, and is as shown in table 1, wherein, the number of plies is that 1 rete is the outermost layer of long-pass film system, and the number of plies is that 39 rete is deposited in the germanium substrate, is the innermost layer of long-pass film system;
Table 1 long-pass film system
。
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately stack, and structure is: (lh) ^8, and centre wavelength is 14600nm; Wherein, l is the zinc sulphide rete, 1 is the coefficient of the corresponding basic thickness of ZnS-film layer thickness, l represents that the ZnS-film layer thickness is 1 basic thickness, h is the lead telluride rete, and 1 is the coefficient of the corresponding basic thickness of lead telluride thicknesses of layers, and h represents that the lead telluride thicknesses of layers is 1 basic thickness, described basic thickness is 1/4th of optical thickness centre wavelength, and the periodicity of basic membrane stack (lh) is 8.
Employing TFCalc software is optimized the structure that described short-pass film is, obtains preferred short-pass film to be, and is as shown in table 2, wherein, the number of plies is that 1 rete is the outermost layer of short-pass film system, and the number of plies is that 16 rete is deposited in the germanium substrate, is the innermost layer of short-pass film system;
Table 2 short-pass film system
。
A kind of 10.3～11.3 μ m of the present invention see through the preparation method of LONG WAVE INFRARED optical filter, and described method step is as follows:
(1) clean substrate is packed into the cleaning vacuum chamber in, be evacuated to 3.0 * 10
-3Pa;
(2) substrate is heated to 150 ℃, and keeps 30min;
(3) open the logical argon gas of the light-duty ion gun of Hall, airshed is 30sccm, and the unlatching cathode voltage is 100～200V, and anode voltage is 50～100V, makes that anode current is 0.5A; Adopt the thermal resistance evaporation method respectively at a side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit long-pass film system successively, at the opposite side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit short-pass film system successively, until the deposition of finishing described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0～3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8～1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three;
(4) substrate naturally cools to room temperature, obtains 10.3～11.3 μ m of the present invention and sees through the LONG WAVE INFRARED optical filter.
Beneficial effect
1. the invention provides a kind of 10.3～11.3 μ m and see through the LONG WAVE INFRARED optical filter, described optical filter reaches the excellent technique index: have high permeability τ at 10.3～11.3 μ m spectral coverages
Av〉=80%, in 0.9～10.15 μ m and 11.45～20 wide ending of μ m spectral coverage, end degree of depth τ in the cut-off region
λ＜1%, half-power point wavelength franchise can be improved the characteristic of passband and the rejection zone of this spectral coverage optical filter greatly within 50nm, satisfy the request for utilization of remote sensing system, has high stability and high reliability;
2. the invention provides a kind of 10.3～11.3 μ m and see through the LONG WAVE INFRARED optical filter, the film system of described optical filter comprises zinc sulphide rete and the lead telluride rete of alternately stack, and film is that the number of plies is less;
3. the invention provides the preparation method that a kind of 10.3～11.3 μ m see through the LONG WAVE INFRARED optical filter, described method can make optical filter of the present invention, process stabilizing, and good reproducibility, easy and simple to handle, finished product rate height.
Description of drawings
Fig. 1 is the transmitted light spectrogram of optical filter among the embodiment 1.
Embodiment
In order to prove absolutely characteristic of the present invention and to implement mode of the present invention, provide embodiment below.
Embodiment 1
A kind of 10.3～11.3 μ m see through the LONG WAVE INFRARED optical filter, and described optical filter comprises the long-pass film system of germanium substrate, substrate one side and the short-pass film system of substrate opposite side.
Wherein, the long 29.5mm of described substrate, wide 1.36mm, thick 1.2mm, surface smoothness is 40/20.
Long-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately stack, and centre wavelength is 7300nm; Each rete parameter is as shown in table 3, and wherein, the number of plies is that 1 rete is the outermost layer of long-pass film system, and the number of plies is that 39 rete is deposited in the germanium substrate, is the innermost layer of long-pass film system;
Table 3 long-pass film system and thicknesses of layers monitoring
。
Short-pass film system comprises zinc sulphide rete and the lead telluride rete of alternately stack, and centre wavelength is 14600nm, and each rete parameter is as shown in table 4, wherein, the number of plies is that 1 rete is the outermost layer of short-pass film system, and the number of plies is that 16 rete is deposited in the germanium substrate, is the innermost layer of short-pass film system;
Table 4 short-pass film system and thicknesses of layers monitoring
。
Preparation method's step of the described optical filter of present embodiment is as follows:
(1) removes impurity in the vacuum chamber with suction cleaner, dip in absolute ethyl alcohol wiped clean vacuum chamber inwall with absorbent gauze then; With analyzing pure acetone ultrasonic cleaning substrate 10min, again with the germanium substrate of analyzing straight alcohol ultrasonic cleaning substrate 10min, clean substrate is packed in the vacuum chamber of cleaning, be evacuated to 3.0 * 10
-3Pa;
(2) substrate is heated to 150 ℃, and keeps 30min;
(3) open the logical argon gas of the light-duty ion gun of Hall, airshed is 30sccm, and the unlatching cathode voltage is 100～200V, and anode voltage is 50～100V, makes that anode current is 0.5A; Adopt the thermal resistance evaporation method respectively at a side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit long-pass film system successively, at the opposite side of substrate zinc sulphide rete and the lead telluride rete in the alternating deposit short-pass film system successively, until the deposition of finishing described film system; Wherein, the rate of sedimentation of zinc sulphide rete is 2.0～3.0nm/s, and the rate of sedimentation of lead telluride rete is 0.8～1.0nm/s; Thicknesses of layers adopts the monitoring of light rule of three, and supervisory wavelength and number of times are shown in table 3 and table 4;
(4) substrate naturally cools to room temperature, obtains described 10.3～11.3 μ m of present embodiment and sees through the LONG WAVE INFRARED optical filter.
Described optical filter is carried out following performance test:
Adopt the test of the PE system of company 2000 infrared Fourier spectrometers, obtain transmitted spectrum as shown in Figure 1, with UVWINLAB software the spectral line among Fig. 1 is calculated, described optical filter is 84.61% at the mean transmissivity of 10.3～11.3 μ m spectral coverages as can be known, mean transmissivity at 0.9～10.15 μ m spectral coverage is 0.43% He, and the mean transmissivity of 1.45～20 μ m spectral coverages is 0.01%.
The present invention includes but be not limited to above embodiment, every any being equal to of carrying out under the spirit and principles in the present invention, replace or local improvement, all will be considered as within protection scope of the present invention.
Claims (9)
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| CN201310150084.2A CN103245995B (en) | 2013-04-25 | 2013-04-25 | 10.3 mu m-11.3 mu m transmissive long-wave infrared optical filter and preparation method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105137514A (en) * | 2015-09-11 | 2015-12-09 | 兰州空间技术物理研究所 | 4.2-4.45[mu]m transmission medium wave infrared optical filter and preparation method |
| CN106324738A (en) * | 2016-11-04 | 2017-01-11 | 天津津航技术物理研究所 | Long-wave infrared filter and method for preparing same |
| CN114460677A (en) * | 2022-04-13 | 2022-05-10 | 翼捷安全设备（昆山）有限公司 | Infrared filter for MEMS black body packaging and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105137514A (en) * | 2015-09-11 | 2015-12-09 | 兰州空间技术物理研究所 | 4.2-4.45[mu]m transmission medium wave infrared optical filter and preparation method |
| CN105137514B (en) * | 2015-09-11 | 2017-07-28 | 兰州空间技术物理研究所 | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method |
| CN106324738A (en) * | 2016-11-04 | 2017-01-11 | 天津津航技术物理研究所 | Long-wave infrared filter and method for preparing same |
| CN114460677A (en) * | 2022-04-13 | 2022-05-10 | 翼捷安全设备（昆山）有限公司 | Infrared filter for MEMS black body packaging and preparation method thereof |
| CN114460677B (en) * | 2022-04-13 | 2022-09-16 | 翼捷安全设备（昆山）有限公司 | Infrared filter for MEMS black body packaging and preparation method thereof |
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