CN103219302B - Perforated interposer - Google Patents

Abstract

A perforated medium plate is provided, wherein the wall of a conductive perforation is provided with a first insulating layer, a second insulating layer formed on the first insulating layer and a metal material formed on the second insulating layer, and the first insulating layer and the second insulating layer are made of different materials. By forming the insulating layers of two materials on the hole wall of the conductive through hole, the conductive through hole has better anti-creeping and high-voltage-resistant characteristics.

Description

Perforated interposer

technical field

The invention relates to an intermediary board, especially an intermediary board with perforations.

Background technique

Since IBM introduced flip chip packaging (FlipChipPackage) technology in the early 1960s, compared to wire bonding (WireBond) technology, flip chip technology is characterized by the electrical connection between the semiconductor chip and the substrate through solder bumps. No ordinary gold thread. The advantage of the flip chip technology is that the technology can increase the packaging density to reduce the size of the package components. At the same time, the flip chip technology does not need to use longer gold wires, so the electrical performance can be improved. In view of this, the industry has been using high-temperature solder on ceramic substrates, the so-called Control-Collapse Chip Connection (C4), for many years. In recent years, due to the increase in demand for high-density, high-speed and low-cost semiconductor components, and in response to the trend of shrinking electronic products, flip-chip components are placed on low-cost organic circuit boards (such as printed circuit boards or Substrate), and epoxy underfill resin (Underfillresin) is used to fill the bottom of the chip to reduce the thermal stress caused by the difference in thermal expansion between the silicon chip and the structure of the organic circuit board, which has shown explosive growth.

In the current flip-chip technology, the surface of the semiconductor integrated circuit (IC) chip is provided with electrode pads (electronic pads), and the packaging substrate also has corresponding flip-chip bonding pads, which can be properly connected between the chip and the packaging substrate. Solder bumps or other conductive solder materials are placed so that the chip is placed on the package substrate in an active face-down mode, wherein the solder bumps or conductive adhesive material provide electrical input between the chip and the package substrate /Output (I/O) and mechanical connections. When the encapsulation substrate and the semiconductor chip etc. are subsequently packaged, in order to provide the encapsulation substrate to be electrically connected to an external electronic device (such as a circuit board), it is usually necessary to plant a plurality of solder balls on the bottom surface of the encapsulation substrate.

As electronic products tend to be thinner, lighter and smaller, and their functions are constantly improved, the wiring density of the semiconductor chip is getting higher and higher, with nanometers as the unit, so the spacing between the flip chip pads of the packaging substrate is smaller .

At present, the pitch of the flip-chip bonding pads on the package substrate is in microns, which cannot be effectively reduced to the size corresponding to the pitch of the electrode pads of the chip. As a result, although there are semiconductor chips with high circuit density, there is no compatible chip. Encapsulate the substrate so that it cannot effectively produce electronic products.

In order to overcome the above-mentioned problems, a silicon interposer (Silicon interposer) 1 is added between the packaging substrate 9 and the semiconductor chip 8. As shown in FIG. Through-silicon via (Through-siliconvia, TSV) 14 in 10 and the circuit redistribution layer (Redistribution layer, RDL) 13 on the top of the silicon body 10 and the through-silicon via 14 make the bottom of the through-silicon via 14 via the conductive bump The block 92 is electrically connected to the flip-chip pad 90 of the packaging substrate 9 with a large spacing, and the uppermost circuit of the circuit redistribution layer 13 has an electrical connection pad, so as to be electrically connected with a small spacing through the solder bump 81 The electrode pads 80 of the semiconductor chip 8 are formed into the encapsulation compound 7 .

Thereby, the packaging substrate 9 can be combined with the semiconductor chip 8 having the electrode pads 80 with high wiring density, so as to achieve the purpose of integrating the semiconductor chip 8 with high wiring density. Therefore, the silicon interposer 1 not only solves the problem of lack of compatible packaging substrates, but also does not change the original supply chain and infrastructure of the IC industry.

At present, in the manufacture of TSV 14, an isolation layer (isolation layer) 11 is formed on the hole wall of the _TSV 14, as shown in FIG. CVD) produced SiO ₂ .

However, there are some deficiencies in the process of making the insulating layer 11, for example: the chemical vapor deposition process has the possibility of electric leakage, the polymer has a dielectric problem, the temperature of the high-temperature furnace process is too high, and the produced SiO ₂ If the material is too hard, or the insulating layer 11 has only a single material, there will be problems of reliability and insulation.

Therefore, how to overcome various problems in the above-mentioned prior art has become an urgent problem to be solved at present.

Contents of the invention

In view of the above-mentioned deficiencies in the prior art, the main purpose of the present invention is to provide a perforated interposer, which has better anti-leakage and high-voltage resistance characteristics by forming an insulating layer of two materials on the hole wall of the conductive perforated hole. .

The perforated interposer provided by the present invention has a first insulating layer, a second insulating layer formed on the first insulating layer, and a metal material formed on the second insulating layer on the wall of the conductive through hole, and The materials of the first and second insulating layers are different.

In the aforementioned perforated interposer, the first and second insulating layers may extend to the substrate of the perforated interposer. Alternatively, a first electrical isolation layer can be formed on the substrate.

It can be seen from the above that the perforated interposer of the present invention has better anti-leakage and high-voltage resistance characteristics than the single-material insulating layer of the prior art by forming an insulating layer of two materials on the hole wall of the conductive perforation. And it can improve the insulation and the reliability of electrical conduction.

Description of drawings

FIG. 1A is a schematic cross-sectional view of a packaging substrate, a semiconductor chip, and a silicon interposer;

FIG. 1B is a partially enlarged cross-sectional schematic diagram of an existing silicon interposer; and

2A to 2H are schematic cross-sectional views of the first embodiment of the manufacturing method of the perforated interposer of the present invention; wherein, FIG. 2A' and FIG. 2D' are the top views of FIG. 2A and FIG. 2D respectively;

3A to 3C are schematic cross-sectional views of a second embodiment of the method for manufacturing a perforated interposer of the present invention;

4A to 4C are schematic cross-sectional views of a third embodiment of the method for manufacturing a perforated interposer of the present invention;

5A to 5H are schematic cross-sectional views of a fourth embodiment of the method for manufacturing a perforated interposer of the present invention; wherein, FIG. 5B' is a top view of FIG. 5B;

6A to 6C are schematic cross-sectional views of a fifth embodiment of the method for manufacturing a perforated interposer of the present invention; and

7A to 7C are schematic cross-sectional views of a sixth embodiment of the manufacturing method of the perforated interposer of the present invention.

Explanation of main component symbols

1 silicon interposer

10 silicon body

11 insulating layer

13 line redistribution layer

14 TSV

2, 2’, 2”, 3, 3’, 3” perforated interposer

20, 30 substrates

20a, 30a first surface

20b, 20b', 30b, 30b' second surface

200, 300 annular holes

200a, 201a, 300a, 301a bottom

201, 301 perforation

21, 31 first insulating layer

22, 32 second insulating layer

220, 360 opening

23a, 33a first line layer

23b, 33b second circuit layer

24, 24’, 24”, 34, 34’, 34” conductive through holes

24a, 24a", 34a, 34a" first end face

24b, 24b', 24b", 34b, 34b', 34b" second end face

240, 340 metal

25a, 35a first protective layer

25b, 35b second protective layer

250a, 350a first opening

250b, 350b second opening

26 electrical isolation layer

36a first electrical isolation layer

36b second electrical isolation layer

7 Encapsulation colloid

8 semiconductor chips

80 electrode pads

81 solder bumps

9 package substrate

90 Flip Chip Bonding Pads

92 conductive bumps.

detailed description

The implementation of the present invention will be described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered. At the same time, terms such as "above" and "a" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the present invention, and the changes or adjustments of their relative relationships have no real meaning. Changes in technical content should also be regarded as the scope of the present invention that can be implemented.

Please refer to FIG. 2A to FIG. 2H , which are schematic cross-sectional views of the first embodiment of the manufacturing method of the perforated interposer 2 of the present invention.

As shown in FIG. 2A and FIG. 2A', a substrate 20 having opposite first surface 20a and second surface 20b is provided. Next, an annular hole 200 is formed on the first surface 20 a of the substrate 20 , and the annular hole 200 has a bottom 200 a.

In this embodiment, the material forming the substrate 20 may be glass, silicon wafer, metal, or polymer. In addition, the outline of the annular hole 200 can be circular or polygonal, and there is no special limitation.

As shown in FIG. 2B , a first insulating layer 21 is formed on the first surface 20 a of the substrate 20 and the wall of the annular hole 200 . Next, a second insulating layer 22 is formed on the first insulating layer 21 on the first surface 20 a of the substrate 20 , and the second insulating layer 22 also fills the annular hole 200 .

In this embodiment, the materials of the first and second insulating layers 21 and 22 are different, and the first insulating layer 21 is a hard material, and the second insulating layer 22 is opposite to the first insulating layer 21. For soft material. In addition, the first and second insulating layers 21 and 22 can be made of organic or inorganic materials, such as epoxy resin, SiN _x , SiO ₂ and so on.

As shown in FIG. 2C, an opening 220 corresponding to the annular hole 200 is formed on the second insulating layer 22, and then the first insulating layer 21 in the opening 220 is removed to expose the ring located in the annular hole 200. The first surface 20a of the substrate 20 .

As shown in FIG. 2D and FIG. 2D', the material of the substrate 20 in the opening 220 is removed, so that the annular hole 200 forms a through hole 201 communicating with the first surface 20a of the substrate 20, the through hole 201 has a bottom 201a, and the The first and second insulating layers 21 , 22 serve as walls of the through hole 201 .

As shown in FIG. 2E , a first circuit layer 23 a is formed on the second insulating layer 22 on the first surface 20 a of the substrate 20 , and a metal material 240 is formed in the through hole 201 to form the conductive through hole 24 . Next, a first protective layer 25a is formed on the second insulating layer 22 and the first wiring layer 23a.

In this embodiment, the first circuit layer 23a and the conductive through hole 24 are formed by electroplating, that is, prior to the second insulating layer 22 on the first surface 20a of the substrate 20 and the second hole wall of the through hole 201. A seed layer (seed layer, not shown) is formed on the insulating layer 22, and the metal material 240 is formed on the seed layer to form the first circuit layer 23a and Conductive vias 24 .

In addition, the conductive through hole 24 has a first end surface 24a corresponding to the first surface 20a and a second end surface 24b corresponding to the second surface 20b, and the first end surface 24a of the conductive through hole 24 is electrically connected to the first circuit layer 23a , and the bottom 201a of the through hole 201 has the metal material 240 on it.

Meanwhile, the material of the conductive through hole 24 includes the metal material 240 , the first and the second insulating layers 21 , 22 . In addition, the conductive through hole 24 is hollow, so that the first protection layer 25 a is filled in the conductive through hole 24 .

As shown in FIG. 2F , part of the material of the second surface 20 b of the substrate 20 and the metal material 240 of the bottom 201 a of the through hole 201 are removed, so that the second surface 20 b ′ of the substrate 20 and the second end surface of the conductive through hole 24 24b, so that the second end surface 24b of the conductive through hole 24 is exposed.

As shown in FIG. 2G, an electrical isolation layer 26 is formed on the second surface 20b' of the substrate 20 to cover the first and second insulating layers 21, 22 in the conductive through hole 24, so that the electrical isolation layer 26 exposes part of the second end surface 24b of the conductive through hole 24 .

As shown in FIG. 2H , a second circuit layer 23 b is formed on the electrical isolation layer 26 , and the second circuit layer 23 b is electrically connected to the second end surface 24 b of the conductive through hole 24 . Finally, a second protection layer 25b is formed on the electrical isolation layer 26 and the second circuit layer 23b, and a plurality of first and second openings 250a are formed on the first and second protection layers 25a, 25b , 250b, so that part of the surface of the first and second circuit layer 23a, 23b is exposed to the first and second openings 250a, 250b.

Please refer to FIG. 3A to FIG. 3C , which are schematic cross-sectional views of the second embodiment of the manufacturing method of the perforated interposer 2' of the present invention. The difference between this embodiment and the first embodiment is only that the metal material 240 at the bottom 201a of the through hole 201 is retained, and other related processes are the same, so the same parts will not be repeated here.

As shown in FIG. 3A, which is the process of FIG. 2E, a first circuit layer 23a is formed on the second insulating layer 22 on the first surface 20a of the substrate 20, and a hollow conductive through hole 24' is formed. The through hole The bottom 201a of 201 has the metal material 240 . Next, a first protective layer 25a is formed on the second insulating layer 22 and the first wiring layer 23a, and the first protective layer 25a is filled in the conductive through hole 24'.

As shown in FIG. 3B, part of the material of the second surface 20b of the substrate 20 and the first insulating layer 21 at the bottom 201a of the through hole 201 are removed, and the metal material 240 at the bottom 201a of the through hole 201 is retained, so that the conductive through hole 24' The second end surface 24b' of the conductive through hole 24' is exposed, so that the metal material 240 covers the hollow of the second end surface 24b' of the conductive through hole 24'.

As shown in FIG. 3C, an electrical isolation layer 26 is formed on the second surface 20b' of the substrate 20, and a second end surface 24b' electrically connected to the conductive through hole 24' is formed on the electrical isolation layer 26. The second circuit layer 23b. Finally, a second protection layer 25b is formed on the electrical isolation layer 26 and the second wiring layer 23b.

Please refer to FIG. 4A to FIG. 4C , which are cross-sectional schematic diagrams of the third embodiment of the manufacturing method of the perforated interposer 2 ″ of the present invention. The difference between this embodiment and the first embodiment lies in the structure of the conductive through hole 24 ″, Other related processes are the same, so the same parts will not be repeated here.

As shown in FIG. 4A, in the process of FIG. 2E, a first circuit layer 23a is formed on the second insulating layer 22, and the metal material 240 is filled in the through hole 201 to form a conductive through hole 24", so that The first insulating layer 21, the second insulating layer 22 and the metal material 240 fill the conductive through hole 24".

As shown in FIG. 4B , part of the material of the second surface 20b of the substrate 20 is removed, so that the second end surface 24b ″ of the conductive through hole 24 ″ is flush with the second surface 20b′ of the substrate 20 .

As shown in FIG. 4C, an electrical isolation layer 26 is formed on the second surface 20b' of the substrate 20, and a second end surface 24b" electrically connected to the conductive through hole 24" is formed on the electrical isolation layer 26. The second circuit layer 23b. Finally, a second protection layer 25b is formed on the electrical isolation layer 26 and the second wiring layer 23b.

Therefore, the present invention provides a perforated interposer 2, 2', 2", which includes: a substrate 20 having an opposite first surface 20a and a second surface 20b', conductive through holes 24, 24 disposed in the substrate 20 ', 24", the first circuit layer 23a provided on the first surface 20a of the substrate 20, the first protection layer 25a provided on the first surface 20a of the substrate 20 and the first circuit layer 23a, provided on The electrical isolation layer 26 on the second surface 20b' of the substrate 20, the second circuit layer 23b disposed on the electrical isolation layer 26, and the electrical isolation layer 26 and the second circuit layer 23b. The second protective layer 25b.

The substrate 20 is a silicon substrate, which has a perforation structure composed of the annular hole 200 and the through hole 201, and the first surface 20a has a first insulating layer 21 and a layer formed on the first insulating layer 21. The second insulating layer 22, wherein the materials of the first and second insulating layers 21 and 22 are different, for example, the first insulating layer 21 is made of hard material, while the second insulating layer 22 is made of soft material.

The conductive through holes 24, 24', 24" are formed in the through hole structure and communicate with the first and second surfaces 20a, 20b' of the substrate 20, and have first end surfaces 24a, 24a corresponding to the first surface 20a "and corresponding to the second end surface 24b, 24b', 24b" of the second surface 20b', and the first and second insulating layers 21, 22 also extend into the through-hole structure as the conductive through-hole 24, 24', 24" hole wall structure, so that a metal material 240 is disposed on the second insulating layer 22 in the through hole structure.

The first circuit layer 23a is disposed on the second insulating layer 22 on the first surface 20a of the substrate 20, and is electrically connected to the first end surfaces 24a, 24a" of the conductive through holes 24, 24', 24".

The first protective layer 25 a is also disposed on the second insulating layer 22 on the first surface 20 a of the substrate 20 .

The electrical isolation layer 26 covers the first and second insulating layers 21, 22 in the conductive through holes 24, 24', 24", so as to expose part of the second end surface 24b of the conductive through holes 24, 24', 24". , 24b', 24b".

The second circuit layer 23b is electrically connected to the second end surfaces 24b, 24b', 24b" of the conductive through holes 24, 24', 24".

In addition, in the first and second embodiments, the conductive through holes 24, 24' are hollow, so that the first protective layer 25a is filled in the conductive through holes 24, 24'. For example, in the first embodiment, the first protective layer 25a connects the first end surface 24a and the second end surface 24b of the conductive through hole 24, and in the second embodiment, the metal material 240 covers the conductive through hole 24' The hollow of the second end face 24b'.

In addition, in the third embodiment, the first insulating layer 21, the second insulating layer 22 and the metal material 240 fill up the conductive through hole 24".

Please refer to FIG. 5A to FIG. 5H , which are schematic cross-sectional views of a fourth embodiment of the manufacturing method of the perforated interposer 3 of the present invention. The difference between this embodiment and the first embodiment lies only in the structure on the first surface 30 a of the substrate 30 , and other related processes are the same, so the same parts will not be repeated here.

As shown in FIG. 5A, a structure as in FIG. 2B is provided, that is, an annular hole 300 is formed on a substrate 30 with opposite first surfaces 30a and second surfaces 30b, the annular hole 300 has a bottom 300a, and the substrate 30 A first insulating layer 31 is formed on the first surface 30 a of the annular hole 300 and a hole wall of the annular hole 300 , and a second insulating layer 32 is formed on the first insulating layer 31 and in the annular hole 300 .

As shown in FIG. 5B and FIG. 5B', the first insulating layer 31 and the second insulating layer 32 on the first surface 30a of the substrate 30 are removed, and only the first insulating layer 31 and the second insulating layer in the annular hole 300 remain. insulating layer 32 .

As shown in FIG. 5C, a first electrical isolation layer 36a is formed on the first surface 30a of the substrate 30, and the first electrical isolation layer 36a has an opening 360 corresponding to the annular hole 300 to expose the annular The first surface 30a of the substrate 30 within the ring of holes 300 .

As shown in FIG. 5D, the material of the substrate 30 in the opening 360 is removed, so that the annular hole 300 forms a through hole 301 communicating with the first surface 30a of the substrate 30, the through hole 301 has a bottom 301a, and the first and second The two insulating layers 31 and 32 serve as the walls of the through hole 301 .

As shown in FIG. 5E , a first circuit layer 33 a is formed on the first electrical isolation layer 36 a, and a metal material 340 is plated in the through hole 301 to form a conductive through hole 34 . Next, a first protective layer 35a is formed on the first electrical isolation layer 36a and the first wiring layer 33a.

In this embodiment, the conductive through hole 34 has a first end surface 34a corresponding to the first surface 30a and a second end surface 34b corresponding to the second surface 30b, and the first end surface 34a of the conductive through hole 34 is electrically connected to the first end surface 34b. A circuit layer 33 a, and the bottom 301 a of the through hole 301 has the metal material 340 .

In addition, the conductive through hole 34 includes the metal material 340 , the first and second insulating layers 31 , 32 , and the conductive through hole 34 is hollow, so that the first protection layer 35 a is filled in the conductive through hole 34 .

As shown in FIG. 5F, part of the material of the second surface 30b of the substrate 30 and the metal material 340 of the bottom 301a of the through hole 301 are removed, so that the second surface 30b' of the substrate 30 and the second end surface 34b of the conductive through hole 34 flush with each other to expose the second end surface 34b of the conductive through hole 34 .

As shown in FIG. 5G, a second electrical isolation layer 36b is formed on the second surface 30b' of the substrate 30, and covers the first and second insulating layers 31, 32 of the conductive through hole 34, so that the second electrical isolation layer 36b The isolation layer 36b exposes part of the second end surface 34b of the conductive through hole 34 .

As shown in FIG. 5H , a second circuit layer 33 b is formed on the second electrical isolation layer 36 b, and the second circuit layer 33 b is electrically connected to the second end surface 34 b of the conductive through hole 34 . Finally, a second protection layer 35b is formed on the second electrical isolation layer 36b and the second circuit layer 33b, and a plurality of first and second openings are formed on the first and second protection layers 35a, 35b. The holes 350a, 350b are used to expose part of the surface of the first and second wiring layers 33a, 33b to the first and second openings 350a, 350b.

Please refer to FIG. 6A to FIG. 6C , which are schematic cross-sectional views of a fifth embodiment of the manufacturing method of the perforated interposer 3' of the present invention. The difference between this embodiment and the fourth embodiment is only that the metal material 340 at the bottom 301a of the through hole 301 is retained, and other related processes are the same, so the same parts will not be repeated here.

As shown in FIG. 6A, which is the process of FIG. 5E, a first circuit layer 33a is formed on the first electrical isolation layer 36a, and the hollow conductive through hole 34' is formed, and the bottom 301a of the through hole 301 has a The metal material 340 . Next, a first protective layer 35a is formed on the first electrical isolation layer 36a and the first circuit layer 33a, and the first protective layer 35a is filled in the conductive through hole 34'.

As shown in FIG. 6B, part of the material of the second surface 30b of the substrate 30 and the first insulating layer 31 at the bottom 301a of the through hole 301 are removed, and the metal material 340 at the bottom 301a of the through hole 301 is retained, so that the conductive through hole 34' The second end surface 34b' of the conductive through hole 34' is exposed, so that the metal material 340 covers the hollow of the second end surface 34b' of the conductive through hole 34'.

As shown in FIG. 6C, a second electrical isolation layer 36b is formed on the second surface 30b' of the substrate 30, and a second electrical isolation layer 36b electrically connected to the conductive through hole 34' is formed on the second electrical isolation layer 36b. The second circuit layer 33b of the two end faces 34b'. Finally, a second protection layer 35b is formed on the second electrical isolation layer 36b and the second wiring layer 33b.

Please refer to FIG. 7A to FIG. 7C , which are cross-sectional schematic diagrams of the sixth embodiment of the manufacturing method of the perforated interposer 3 ″ of the present invention. The difference between this embodiment and the fourth embodiment lies in the structure of the conductive through hole 34 ″, Other related processes are the same, so the same parts will not be repeated here.

As shown in FIG. 7A, in the process of FIG. 5E, a first circuit layer 33a is formed on the first electrical isolation layer 36a, and the metal material 340 is filled in the through hole 301 to form a conductive through hole 34". , so that the first insulating layer 31, the second insulating layer 32 and the metal material 340 fill the conductive through hole 34".

As shown in FIG. 7B, part of the material of the second surface 30b of the substrate 30 and the first insulating layer 31 of the bottom 301a of the through hole 301 are removed, so that the second end surface 34b" of the conductive through hole 34" is connected to the second end surface 34b" of the substrate 30. The two surfaces 30b' are flush with each other.

As shown in FIG. 7C, a second electrical isolation layer 36b is formed on the second surface 30b' of the substrate 30, and a first electrically connected conductive through hole 34" is formed on the second electrical isolation layer 36b. The second circuit layer 33b on the two end faces 34b". Finally, a second protection layer 35b is formed on the second electrical isolation layer 36b and the second wiring layer 33b.

Therefore, the present invention provides another perforated interposer 3, 3', 3", which includes: a substrate 30 having opposite first surfaces 30a and second surfaces 30b', conductive through holes 34 disposed in the substrate 30, 34', 34", the first electrical isolation layer 36a disposed on the first surface 30a of the substrate 30, the first circuit layer 33a disposed on the first electrical isolation layer 36a, the first electrical isolation layer 33a disposed on the first electrical isolation layer The isolation layer 36a and the first protective layer 35a on the first wiring layer 33a, the second electrical isolation layer 36b on the second surface 30b' of the substrate 30, the second electrical isolation layer 36b on the second surface The second circuit layer 33b, and the second protection layer 35b disposed on the second electrical isolation layer 36b and the second circuit layer 33b.

The substrate 30 is a silicon substrate and has a perforation structure composed of the annular hole 300 and the through hole 301 .

The conductive through holes 34, 34', 34" are formed in the through hole structure and communicate with the first and second surfaces 30a, 30b' of the substrate 30, and have first end faces 34a, 34a corresponding to the first surface 30a "and the second end surface 34b, 34b', 34b" corresponding to the second surface 30b', and the hole wall of the perforated structure has a first insulating layer 31, a second insulating layer 32 and a metal material 340 in sequence Wherein, the materials of the first and second insulating layers 31 and 32 are different, for example, the first insulating layer 31 is made of hard material, while the second insulating layer 32 is made of soft material.

The first electrical isolation layer 36a covers the first and second insulating layers 31, 32 of the conductive through holes 34, 34', 34", so as to expose the first end faces 34a of the conductive through holes 34, 34', 34". , 34a".

The first circuit layer 33a is electrically connected to the first end faces 34a, 34a" of the conductive through holes 34, 34', 34".

The second electrical isolation layer 36b covers the first and second insulating layers 31, 32 of the conductive through holes 34, 34', 34", so as to expose part of the second end surface of the conductive through holes 34, 34', 34". 34b, 34b', 34b".

The second circuit layer 33b is electrically connected to the second end surfaces 34b, 34b', 34b" of the conductive through holes 34, 34', 34".

In addition, in the fourth and fifth embodiments, the conductive through holes 34, 34' are hollow, so that the first protection layer 35a is filled in the conductive through holes 34, 34'. For example: in the fourth embodiment, the first protective layer 35a connects the first end surface 34a and the second end surface 34b of the conductive through hole 34, and in the fifth embodiment, the metal material 340 covers the conductive through hole 34' The hollow of the second end surface 34b' of the.

In addition, in the sixth embodiment, the first insulating layer 31 , the second insulating layer 32 and the metal material 340 fill up the conductive through hole 34 ″.

To sum up, the perforated interposer of the present invention mainly has two kinds of insulating materials on the hole wall of the conductive perforation, so as to have better leakage prevention and high voltage resistance characteristics, and improve insulation and electrical conductivity. reliability.

In addition, the perforated interposer of the present invention is a low-cost manufacturing technology, so it is beneficial to mass production.

The above-mentioned embodiments are only used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be listed in the claims.

Claims (14)

1. A perforated interposer, comprising: A substrate, which has an opposite first surface and a second surface, and a perforation structure connecting the first surface and the second surface, and the first surface of the substrate has a first insulating layer and is formed on the first insulating layer The second insulating layer, and the materials of the first and second insulating layers are different; A conductive through hole is formed in the through hole structure, the first and second insulating layers extend into the through hole structure as a hole wall structure of the conductive through hole, and the conductive through hole also has a first end surface corresponding to the first surface The second end surface corresponding to the second surface and the metal material disposed on the second insulating layer in the through-hole structure; a first circuit layer disposed on the second insulating layer on the first surface of the substrate and electrically connected to the first end surface of the conductive through hole; a first protective layer disposed on the second insulating layer and the first wiring layer on the first surface of the substrate; an electrical isolation layer disposed on the second surface of the substrate and exposing the second end surface of the conductive through hole; a second circuit layer disposed on the electrical isolation layer and electrically connected to the second end surface of the conductive through hole; and The second protection layer is disposed on the electrical isolation layer and the second circuit layer. 2. The through-hole interposer according to claim 1, wherein the electrical isolation layer also covers the first and second insulating layers on the second end surface of the conductive through-hole. 3. The through-hole interposer according to claim 1, wherein the first protective layer is also filled in the conductive through-hole. 4 . The through-hole interposer according to claim 3 , wherein the first protective layer communicates with the first end surface and the second end surface of the conductive through hole. 5. The perforated interposer according to claim 3, wherein the metal material covers the second end surface of the conductive through hole. 6. The perforated interposer according to claim 1, wherein the metal material fills the conductive through hole, and the material of the metal material is copper. 7. The perforated interposer according to claim 1, wherein the first insulating layer is made of hard material, and the second insulating layer is made of soft material relative to the first insulating layer. 8. A perforated interposer comprising: a substrate having opposite first and second surfaces, and a perforated structure communicating the first and second surfaces; A conductive through hole is formed in the through hole structure, the conductive through hole has a first end surface corresponding to the first surface and a second end surface corresponding to the second surface, and the hole wall of the through hole structure has a first insulating layer, formed The second insulating layer on the first insulating layer and the metal material formed on the second insulating layer, and the materials of the first and second insulating layers are different; a first electrical isolation layer, which is disposed on the first surface of the substrate and exposes the first end surface of the conductive through hole; a first circuit layer disposed on the first electrical isolation layer and electrically connected to the first end surface of the conductive through hole; a first protective layer disposed on the first electrical isolation layer and the first circuit layer; a second electrical isolation layer disposed on the second surface of the substrate and exposing the second end surface of the conductive through hole; a second circuit layer disposed on the second electrical isolation layer and electrically connected to the second end surface of the conductive through hole; and The second protection layer is disposed on the second electrical isolation layer and the second circuit layer. 9. The through-hole interposer according to claim 8, wherein the first and second electrical isolation layers respectively cover the first and second insulating layers on the first and second end surfaces of the conductive through-hole. 10 . The through-hole interposer according to claim 8 , wherein the first protection layer is also filled in the conductive through hole. 11 . 11 . The through-hole interposer according to claim 10 , wherein the first protection layer communicates with the first end surface and the second end surface of the conductive through hole. 12 . The perforated interposer according to claim 8 , wherein the metal material covers the second end surface of the conductive through hole. 13 . 13. The perforated interposer according to claim 8, wherein the metal material fills the conductive through hole, and the material of the metal material is copper. 14. The perforated interposer according to claim 8, wherein the first insulating layer is made of hard material, and the second insulating layer is made of soft material relative to the first insulating layer.