[go: up one dir, main page]

CN103197443B - straight waveguide phase modulator - Google Patents

straight waveguide phase modulator Download PDF

Info

Publication number
CN103197443B
CN103197443B CN201310144687.1A CN201310144687A CN103197443B CN 103197443 B CN103197443 B CN 103197443B CN 201310144687 A CN201310144687 A CN 201310144687A CN 103197443 B CN103197443 B CN 103197443B
Authority
CN
China
Prior art keywords
lithium niobate
guide face
phase modulator
wave guide
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310144687.1A
Other languages
Chinese (zh)
Other versions
CN103197443A (en
Inventor
华勇
舒平
田自君
张鸿举
黄健
王超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cetc Chip Technology Group Co ltd
Original Assignee
CETC 44 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 44 Research Institute filed Critical CETC 44 Research Institute
Priority to CN201310144687.1A priority Critical patent/CN103197443B/en
Publication of CN103197443A publication Critical patent/CN103197443A/en
Application granted granted Critical
Publication of CN103197443B publication Critical patent/CN103197443B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

A kind of straight waveguide phase modulator, comprise titanium diffusion lithium niobate phase modulator, its improvement is: the input end end face of titanium diffusion lithium niobate phase modulator is bonding with lithium niobate polarizer chip end coupling; Lithium niobate polarizer chip is led by lithium niobate crystal chip and the partial wave that formed on lithium niobate crystal chip surface and is formed, play the structure surface formation first wave guide face that partial wave leads place, playing partial wave, to lead the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at phase-modulation waveguide place forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.Advantageous Effects of the present invention is: deflection device and phasing device are become one, has greatly reduced device volume, reduces the complexity of coupling technique, improves production and processing efficiency.Because the polarization maintaining optical fibre eliminated between deflection device with phasing device is connected, degree of polarization improves greatly (being greater than 80dB), improves system reliability simultaneously.

Description

Straight waveguide phase modulator
Technical field
The present invention relates to a kind of phase-modulator, particularly relate to a kind of straight waveguide phase modulator.
Background technology
Use for reference the optical fiber current mutual inductor (FOCT) of optical fibre gyro Photoelectric Signal Processing technology, the digital closed loop feedback system constructed by igh-speed wire-rod production line unit and electro-optic phase modulator, the nonreciprocity phase shift information caused by magnetic field Faraday effect in light wave loop can be measured in real time, and then obtain foreign current information, measurement range is wide, dynamic perfromance is good advantage that this makes FOCT have, solve the problem such as hysteresis & saturation, wave form distortion that conventional electromagnetic current transformer exists, adapt to the demand of modern power systems to current measurement value reliability.
Fig. 2 is a kind of composition structural representation of typical optical fiber current mutual inductor, and the essence of this structure utilizes the principle of the 2 bundle interference of light to measure electric current.As can be seen from schematic diagram, optical fiber current mutual inductor is primarily of light source, photodetector (in Fig. 2 PIN), polarization-maintaining fiber coupler, the line polarisation polarizer, the first polarization maintaining optical fibre, straight waveguide phase modulator (i.e. titanium diffusion lithium niobate phase modulator), the second polarization maintaining optical fibre, λ/4 wave plate, sensing fiber ring and reflective mirror composition, wherein, relevant to problem solved by the invention has: 1) the line polarisation polarizer and straight waveguide phase modulator are split-type structural, device cumulative volume is larger, 2) connected by the first polarization maintaining optical fibre between the line polarisation polarizer and straight waveguide phase modulator, under prior art condition, the polarization retention of the polarization maintaining optical fibre of 2 meters long is only 35dB, and the polarization retention of polarization maintaining optical fibre also can continue along with the increase of length to decline, this just causes the degree of bias that rises of the line polarisation finally entering straight waveguide phase modulator to be less than 35dB, extremely be unfavorable for follow-up signal transacting.
Nearest research shows, adopt the lithium niobate fiber waveguide that annealed proton exchange process processes, its polarization extinction ratio can reach more than 80dB, this lithium niobate fiber waveguide can be obtained the line polarisation of high-polarization as the polarizer (i.e. lithium niobate polarizer chip), itself and titanium are spread the direct end coupling of lithium niobate phase modulator, the line polarisation of high-polarization can be made in the loss-free situation of degree of polarization in direct Implanted Titanium diffusion lithium niobate phase modulator, thus save the polarization maintaining optical fibre between deflection device and phasing device, but in actual applications, owing to needing to adjust the polarizing angle degree of lithium niobate polarizer chip, the coupling angle of titanium diffusion lithium niobate phase modulator and lithium niobate polarizer chip is regulated in coupling technique with regard to needing, owing to needing to carry out Real-Time Monitoring to the coupling mass of titanium diffusion lithium niobate phase modulator and lithium niobate polarizer chip in coupling technique, therefore coupling technique needs manual operation to carry out, the effect that operating personnel should monitor coupling in operation regulates coupling angle again, this just causes the complexity of coupling technique significantly to improve, working (machining) efficiency obviously declines.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of straight waveguide phase modulator, comprise titanium diffusion lithium niobate phase modulator, the input end end face of described titanium diffusion lithium niobate phase modulator is bonding with a lithium niobate polarizer chip end coupling; Described lithium niobate polarizer chip is by lithium niobate crystal chip and adopt proton exchange annealing process to lead at the partial wave that its surface is formed to form, described partial wave leads the structure surface formation first wave guide face at place, playing partial wave, to lead the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at the phase-modulation waveguide place in titanium diffusion lithium niobate phase modulator forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.
Principle of the present invention is: when making lithium niobate polarizer chip, the polarizing angle degree just making the partial wave on lithium niobate polarizer chip lead and first wave guide face are 45 ° of angles, thus the adjustment operation saved to polarizing angle degree in coupling technique, greatly simplify the complexity of coupling technique, improve the working (machining) efficiency of coupling operation; Lithium niobate polarizer chip of the present invention obtains like this:
The technique of conventional processing lithium niobate polarizer chip is: 1) carry out cutting perpendicular to X-axis or perpendicular to the crystal orientation of Z axis to lithium columbate crystal, obtain lithium niobate crystal chip, 2) grinding and polishing is carried out to lithium niobate crystal chip surface, 3) proton exchange annealing process is adopted, lithium niobate crystal chip processes waveguide, obtains lithium niobate polarizer chip;
Due in commercial production, when cutting, its cut surface is general all perpendicular to a certain crystal orientation of crystal usually, and the benefit of cutting like this, except simplifying except cutting technique, can also reduce processing and consume, save materials, this just makes those skilled in the art define certain mindset; But inventor finds, in step 1), when cutting lithium columbate crystal, if carry out inclined cut, even if cut surface is parallel with the Y direction of lithium columbate crystal, the Z-direction of cut surface and lithium columbate crystal forms an angle simultaneously , 0 ° of < < 90 ° (as shown in Figure 4), then adopt step 2), 3) in technique, lithium niobate crystal chip processes waveguiding structure (namely playing partial wave to lead), and the polarizing angle degree of the final lithium niobate polarizer chip obtained to input light will exist with waveguide surface (i.e. first wave guide face) the angle of angle, in follow-up coupling technique, only need to ensure that first wave guide face flushes with Second Wave guide face, need not regulate coupling angle, this just greatly reduces the complexity of coupling operation, simultaneously again, because the cutting operation of lithium columbate crystal is undertaken by Fully-mechanized equipment, only need regulate the angle of cutting knife, therefore, the impact caused cutting technique is very little.
Advantageous Effects of the present invention is: deflection device and phasing device are become one, has greatly reduced device volume, reduces the complexity of coupling technique, improves production and processing efficiency.Because the polarization maintaining optical fibre eliminated between deflection device with phasing device is connected, degree of polarization improves greatly (being greater than 80dB), improves system reliability simultaneously.
Accompanying drawing explanation
Fig. 1, structural representation of the present invention;
Fig. 2, existing optical fiber current mutual inductor structural representation;
Fig. 3, existing lithium niobate crystal chip cutting mode schematic diagram;
The lithium niobate crystal chip cutting mode schematic diagram that Fig. 4, lithium niobate polarizer chip of the present invention adopt;
Structural representation after lithium niobate crystal chip polishing in Fig. 5, Fig. 4;
In figure, shown in each mark, parts are respectively: titanium diffusion lithium niobate phase modulator 1, lithium niobate polarizer chip 2, lithium niobate crystal chip 3, play that a partial wave leads 4, phase-modulation waveguide 5, optical fiber component 6, incisory lithium columbate crystal A.
Embodiment
A kind of straight waveguide phase modulator, comprises titanium diffusion lithium niobate phase modulator 1, and the input end end face of described titanium diffusion lithium niobate phase modulator 1 is bonding with lithium niobate polarizer chip 2 end coupling; Described lithium niobate polarizer chip 2 is led 4 by lithium niobate crystal chip 3 and employing proton exchange annealing process at the partial wave that its surface is formed and is formed, described partial wave leads the structure surface formation first wave guide face at 4 places, playing partial wave, to lead 4 to the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at phase-modulation waveguide 5 place in titanium diffusion lithium niobate phase modulator 1 forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.

Claims (1)

1. a straight waveguide phase modulator, comprises titanium diffusion lithium niobate phase modulator (1), and the input end end face of described titanium diffusion lithium niobate phase modulator (1) is bonding with lithium niobate polarizer chip (2) end coupling; Described lithium niobate polarizer chip (2) is led (4) by lithium niobate crystal chip (3) and employing proton exchange annealing process at the partial wave that lithium niobate crystal chip (3) surface is formed and is formed, it is characterized in that: described partial wave leads the structure surface formation first wave guide face at (4) place, playing partial wave, to lead (4) to the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at phase-modulation waveguide (5) place on titanium diffusion lithium niobate phase modulator (1) forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.
CN201310144687.1A 2013-04-24 2013-04-24 straight waveguide phase modulator Active CN103197443B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310144687.1A CN103197443B (en) 2013-04-24 2013-04-24 straight waveguide phase modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310144687.1A CN103197443B (en) 2013-04-24 2013-04-24 straight waveguide phase modulator

Publications (2)

Publication Number Publication Date
CN103197443A CN103197443A (en) 2013-07-10
CN103197443B true CN103197443B (en) 2015-09-02

Family

ID=48720116

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310144687.1A Active CN103197443B (en) 2013-04-24 2013-04-24 straight waveguide phase modulator

Country Status (1)

Country Link
CN (1) CN103197443B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103676219B (en) * 2013-12-20 2017-01-25 北京航天时代光电科技有限公司 Low polarization dependent loss lithium niobate straight-bar waveguide phase modulator and manufacturing method thereof
WO2017120717A1 (en) * 2016-01-11 2017-07-20 中国科学院国家授时中心 Electro-optic phase modulation system
CN107219646B (en) * 2017-06-05 2019-07-23 西安交通大学 A kind of straight wave guide type electro-optic phase modulator and preparation method thereof
CN108761640A (en) * 2018-06-12 2018-11-06 黑龙江工业学院 A kind of high polarization extinction ratio waveguide polarizer and its manufacturing method of fiber coupling
CN111106932B (en) * 2018-10-26 2021-07-09 科大国盾量子技术股份有限公司 Polarization control system and method based on straight waveguide modulator and quantum key distribution system
CN112578581B (en) * 2020-12-11 2022-03-08 上海交通大学 Electro-optic polarization modulator based on lithium niobate Y waveguide integrated optical device
CN113031317A (en) * 2021-03-26 2021-06-25 武汉光迅科技股份有限公司 Miniaturized high extinction ratio modulation device and use method thereof
CN116088080B (en) * 2023-04-07 2023-06-09 欧梯恩智能科技(苏州)有限公司 Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103494A (en) * 1989-07-18 1992-04-07 Alcatel N.V. Optoelectronic arrangement
CN1687794A (en) * 2005-06-13 2005-10-26 北京航空航天大学 Optical fibre current transformer and its on line temp measuring method
CN102967734A (en) * 2012-11-16 2013-03-13 清华大学 Preparation method of barium metaborate crystal electric field sensor based on angular optical biasing

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06308439A (en) * 1993-04-20 1994-11-04 Sumitomo Metal Mining Co Ltd Polarization modulating device and polarization modulating method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103494A (en) * 1989-07-18 1992-04-07 Alcatel N.V. Optoelectronic arrangement
CN1687794A (en) * 2005-06-13 2005-10-26 北京航空航天大学 Optical fibre current transformer and its on line temp measuring method
CN102967734A (en) * 2012-11-16 2013-03-13 清华大学 Preparation method of barium metaborate crystal electric field sensor based on angular optical biasing

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
铌酸锂光波导和光波导偏振器的研究;冯莹;《国防科学技术大学博士论文集》;20110818;全文 *

Also Published As

Publication number Publication date
CN103197443A (en) 2013-07-10

Similar Documents

Publication Publication Date Title
CN103197443B (en) straight waveguide phase modulator
US20180372957A1 (en) Broadband polarization beam splitter/combiner based on gradient waveguide directional coupler
CN102122086B (en) Dual-polarization-mode lithium niobate straight waveguide phase modulator and preparation method thereof
CN107121585B (en) Electro-optic phase modulator half-wave voltage measurement system and measurement method
CN102854360B (en) Stability control device for transmission spectrums of optical fiber current transducer
US9588150B2 (en) Electric current measuring apparatus
CN209764932U (en) Polarization-detecting closed-loop all-fiber current transformer
JPH04324817A (en) Magneto-optical element and magnetic field measuring device
CN101968507B (en) Optical fiber voltage sensor and adjustment method thereof
JP2016042089A (en) Resonant fiber optic gyroscope with polarizing crystal waveguide coupler
CN101968508B (en) All-fiber current sensor and polarization state control method thereof
CN103454726B (en) A kind of method for making of quarter-wave plate
CN203324388U (en) Optical crystal electric field sensor based on DFB laser
CN105928501A (en) Integrated optical circuit structure fiber-optic gyroscope and work method thereof
CN103344925A (en) Slow light Sagnac nonreciprocal interference optical fiber magnetic field sensor
CN105866506B (en) A kind of device and method that conductor current is measured using magneto-optic memory technique
CN104317072A (en) Faraday rotating lens irrelevant to wavelength and temperature
CN104535819B (en) The polarization error restraining device and method of the Y waveguide loop of optical fiber current mutual inductor
CN210926606U (en) A Laser Frequency Locking Device Based on Wavelength Meter and Numerical Control Feedback
JP2017015576A (en) Sagnac interference type optical current sensor and method for processing signal of the same
CN105954564B (en) A kind of device and method that conductor current is measured using magneto-optic memory technique
CN204964600U (en) Fiber current sensor optical structure
CN103197375B (en) Method for generating line polarization with high degree of polarization at any angle in optical waveguide device
CN106501593A (en) An all-fiber-optic current transformer modulation phase disturbance compensation device and method
CN113804938B (en) Optical current transformer and control method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20231216

Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332

Patentee after: CETC Chip Technology (Group) Co.,Ltd.

Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road 44

Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.44 Research Institute