CN103197443B - straight waveguide phase modulator - Google Patents
straight waveguide phase modulator Download PDFInfo
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- CN103197443B CN103197443B CN201310144687.1A CN201310144687A CN103197443B CN 103197443 B CN103197443 B CN 103197443B CN 201310144687 A CN201310144687 A CN 201310144687A CN 103197443 B CN103197443 B CN 103197443B
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- lithium niobate
- guide face
- phase modulator
- wave guide
- wave
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 238000010168 coupling process Methods 0.000 claims abstract description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 17
- 239000010936 titanium Substances 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 abstract description 14
- 230000010287 polarization Effects 0.000 abstract description 14
- 238000012545 processing Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005520 cutting process Methods 0.000 description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 229910052744 lithium Inorganic materials 0.000 description 6
- 239000000835 fiber Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of straight waveguide phase modulator, comprise titanium diffusion lithium niobate phase modulator, its improvement is: the input end end face of titanium diffusion lithium niobate phase modulator is bonding with lithium niobate polarizer chip end coupling; Lithium niobate polarizer chip is led by lithium niobate crystal chip and the partial wave that formed on lithium niobate crystal chip surface and is formed, play the structure surface formation first wave guide face that partial wave leads place, playing partial wave, to lead the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at phase-modulation waveguide place forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.Advantageous Effects of the present invention is: deflection device and phasing device are become one, has greatly reduced device volume, reduces the complexity of coupling technique, improves production and processing efficiency.Because the polarization maintaining optical fibre eliminated between deflection device with phasing device is connected, degree of polarization improves greatly (being greater than 80dB), improves system reliability simultaneously.
Description
Technical field
The present invention relates to a kind of phase-modulator, particularly relate to a kind of straight waveguide phase modulator.
Background technology
Use for reference the optical fiber current mutual inductor (FOCT) of optical fibre gyro Photoelectric Signal Processing technology, the digital closed loop feedback system constructed by igh-speed wire-rod production line unit and electro-optic phase modulator, the nonreciprocity phase shift information caused by magnetic field Faraday effect in light wave loop can be measured in real time, and then obtain foreign current information, measurement range is wide, dynamic perfromance is good advantage that this makes FOCT have, solve the problem such as hysteresis & saturation, wave form distortion that conventional electromagnetic current transformer exists, adapt to the demand of modern power systems to current measurement value reliability.
Fig. 2 is a kind of composition structural representation of typical optical fiber current mutual inductor, and the essence of this structure utilizes the principle of the 2 bundle interference of light to measure electric current.As can be seen from schematic diagram, optical fiber current mutual inductor is primarily of light source, photodetector (in Fig. 2 PIN), polarization-maintaining fiber coupler, the line polarisation polarizer, the first polarization maintaining optical fibre, straight waveguide phase modulator (i.e. titanium diffusion lithium niobate phase modulator), the second polarization maintaining optical fibre, λ/4 wave plate, sensing fiber ring and reflective mirror composition, wherein, relevant to problem solved by the invention has: 1) the line polarisation polarizer and straight waveguide phase modulator are split-type structural, device cumulative volume is larger, 2) connected by the first polarization maintaining optical fibre between the line polarisation polarizer and straight waveguide phase modulator, under prior art condition, the polarization retention of the polarization maintaining optical fibre of 2 meters long is only 35dB, and the polarization retention of polarization maintaining optical fibre also can continue along with the increase of length to decline, this just causes the degree of bias that rises of the line polarisation finally entering straight waveguide phase modulator to be less than 35dB, extremely be unfavorable for follow-up signal transacting.
Nearest research shows, adopt the lithium niobate fiber waveguide that annealed proton exchange process processes, its polarization extinction ratio can reach more than 80dB, this lithium niobate fiber waveguide can be obtained the line polarisation of high-polarization as the polarizer (i.e. lithium niobate polarizer chip), itself and titanium are spread the direct end coupling of lithium niobate phase modulator, the line polarisation of high-polarization can be made in the loss-free situation of degree of polarization in direct Implanted Titanium diffusion lithium niobate phase modulator, thus save the polarization maintaining optical fibre between deflection device and phasing device, but in actual applications, owing to needing to adjust the polarizing angle degree of lithium niobate polarizer chip, the coupling angle of titanium diffusion lithium niobate phase modulator and lithium niobate polarizer chip is regulated in coupling technique with regard to needing, owing to needing to carry out Real-Time Monitoring to the coupling mass of titanium diffusion lithium niobate phase modulator and lithium niobate polarizer chip in coupling technique, therefore coupling technique needs manual operation to carry out, the effect that operating personnel should monitor coupling in operation regulates coupling angle again, this just causes the complexity of coupling technique significantly to improve, working (machining) efficiency obviously declines.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of straight waveguide phase modulator, comprise titanium diffusion lithium niobate phase modulator, the input end end face of described titanium diffusion lithium niobate phase modulator is bonding with a lithium niobate polarizer chip end coupling; Described lithium niobate polarizer chip is by lithium niobate crystal chip and adopt proton exchange annealing process to lead at the partial wave that its surface is formed to form, described partial wave leads the structure surface formation first wave guide face at place, playing partial wave, to lead the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at the phase-modulation waveguide place in titanium diffusion lithium niobate phase modulator forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.
Principle of the present invention is: when making lithium niobate polarizer chip, the polarizing angle degree just making the partial wave on lithium niobate polarizer chip lead and first wave guide face are 45 ° of angles, thus the adjustment operation saved to polarizing angle degree in coupling technique, greatly simplify the complexity of coupling technique, improve the working (machining) efficiency of coupling operation; Lithium niobate polarizer chip of the present invention obtains like this:
The technique of conventional processing lithium niobate polarizer chip is: 1) carry out cutting perpendicular to X-axis or perpendicular to the crystal orientation of Z axis to lithium columbate crystal, obtain lithium niobate crystal chip, 2) grinding and polishing is carried out to lithium niobate crystal chip surface, 3) proton exchange annealing process is adopted, lithium niobate crystal chip processes waveguide, obtains lithium niobate polarizer chip;
Due in commercial production, when cutting, its cut surface is general all perpendicular to a certain crystal orientation of crystal usually, and the benefit of cutting like this, except simplifying except cutting technique, can also reduce processing and consume, save materials, this just makes those skilled in the art define certain mindset; But inventor finds, in step 1), when cutting lithium columbate crystal, if carry out inclined cut, even if cut surface is parallel with the Y direction of lithium columbate crystal, the Z-direction of cut surface and lithium columbate crystal forms an angle simultaneously
, 0 ° of <
< 90 ° (as shown in Figure 4), then adopt step 2), 3) in technique, lithium niobate crystal chip processes waveguiding structure (namely playing partial wave to lead), and the polarizing angle degree of the final lithium niobate polarizer chip obtained to input light will exist with waveguide surface (i.e. first wave guide face)
the angle of angle, in follow-up coupling technique, only need to ensure that first wave guide face flushes with Second Wave guide face, need not regulate coupling angle, this just greatly reduces the complexity of coupling operation, simultaneously again, because the cutting operation of lithium columbate crystal is undertaken by Fully-mechanized equipment, only need regulate the angle of cutting knife, therefore, the impact caused cutting technique is very little.
Advantageous Effects of the present invention is: deflection device and phasing device are become one, has greatly reduced device volume, reduces the complexity of coupling technique, improves production and processing efficiency.Because the polarization maintaining optical fibre eliminated between deflection device with phasing device is connected, degree of polarization improves greatly (being greater than 80dB), improves system reliability simultaneously.
Accompanying drawing explanation
Fig. 1, structural representation of the present invention;
Fig. 2, existing optical fiber current mutual inductor structural representation;
Fig. 3, existing lithium niobate crystal chip cutting mode schematic diagram;
The lithium niobate crystal chip cutting mode schematic diagram that Fig. 4, lithium niobate polarizer chip of the present invention adopt;
Structural representation after lithium niobate crystal chip polishing in Fig. 5, Fig. 4;
In figure, shown in each mark, parts are respectively: titanium diffusion lithium niobate phase modulator 1, lithium niobate polarizer chip 2, lithium niobate crystal chip 3, play that a partial wave leads 4, phase-modulation waveguide 5, optical fiber component 6, incisory lithium columbate crystal A.
Embodiment
A kind of straight waveguide phase modulator, comprises titanium diffusion lithium niobate phase modulator 1, and the input end end face of described titanium diffusion lithium niobate phase modulator 1 is bonding with lithium niobate polarizer chip 2 end coupling; Described lithium niobate polarizer chip 2 is led 4 by lithium niobate crystal chip 3 and employing proton exchange annealing process at the partial wave that its surface is formed and is formed, described partial wave leads the structure surface formation first wave guide face at 4 places, playing partial wave, to lead 4 to the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at phase-modulation waveguide 5 place in titanium diffusion lithium niobate phase modulator 1 forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.
Claims (1)
1. a straight waveguide phase modulator, comprises titanium diffusion lithium niobate phase modulator (1), and the input end end face of described titanium diffusion lithium niobate phase modulator (1) is bonding with lithium niobate polarizer chip (2) end coupling; Described lithium niobate polarizer chip (2) is led (4) by lithium niobate crystal chip (3) and employing proton exchange annealing process at the partial wave that lithium niobate crystal chip (3) surface is formed and is formed, it is characterized in that: described partial wave leads the structure surface formation first wave guide face at (4) place, playing partial wave, to lead (4) to the input polarizing angle degree of light and first wave guide face be 45 ° of angles, the structure surface at phase-modulation waveguide (5) place on titanium diffusion lithium niobate phase modulator (1) forms Second Wave guide face, and first wave guide face and Second Wave guide face flush.
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CN201310144687.1A CN103197443B (en) | 2013-04-24 | 2013-04-24 | straight waveguide phase modulator |
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CN201310144687.1A CN103197443B (en) | 2013-04-24 | 2013-04-24 | straight waveguide phase modulator |
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CN103197443A CN103197443A (en) | 2013-07-10 |
CN103197443B true CN103197443B (en) | 2015-09-02 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103676219B (en) * | 2013-12-20 | 2017-01-25 | 北京航天时代光电科技有限公司 | Low polarization dependent loss lithium niobate straight-bar waveguide phase modulator and manufacturing method thereof |
WO2017120717A1 (en) * | 2016-01-11 | 2017-07-20 | 中国科学院国家授时中心 | Electro-optic phase modulation system |
CN107219646B (en) * | 2017-06-05 | 2019-07-23 | 西安交通大学 | A kind of straight wave guide type electro-optic phase modulator and preparation method thereof |
CN108761640A (en) * | 2018-06-12 | 2018-11-06 | 黑龙江工业学院 | A kind of high polarization extinction ratio waveguide polarizer and its manufacturing method of fiber coupling |
CN111106932B (en) * | 2018-10-26 | 2021-07-09 | 科大国盾量子技术股份有限公司 | Polarization control system and method based on straight waveguide modulator and quantum key distribution system |
CN112578581B (en) * | 2020-12-11 | 2022-03-08 | 上海交通大学 | Electro-optic polarization modulator based on lithium niobate Y waveguide integrated optical device |
CN113031317A (en) * | 2021-03-26 | 2021-06-25 | 武汉光迅科技股份有限公司 | Miniaturized high extinction ratio modulation device and use method thereof |
CN116088080B (en) * | 2023-04-07 | 2023-06-09 | 欧梯恩智能科技(苏州)有限公司 | Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system |
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US5103494A (en) * | 1989-07-18 | 1992-04-07 | Alcatel N.V. | Optoelectronic arrangement |
CN1687794A (en) * | 2005-06-13 | 2005-10-26 | 北京航空航天大学 | Optical fibre current transformer and its on line temp measuring method |
CN102967734A (en) * | 2012-11-16 | 2013-03-13 | 清华大学 | Preparation method of barium metaborate crystal electric field sensor based on angular optical biasing |
Family Cites Families (1)
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JPH06308439A (en) * | 1993-04-20 | 1994-11-04 | Sumitomo Metal Mining Co Ltd | Polarization modulating device and polarization modulating method |
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2013
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5103494A (en) * | 1989-07-18 | 1992-04-07 | Alcatel N.V. | Optoelectronic arrangement |
CN1687794A (en) * | 2005-06-13 | 2005-10-26 | 北京航空航天大学 | Optical fibre current transformer and its on line temp measuring method |
CN102967734A (en) * | 2012-11-16 | 2013-03-13 | 清华大学 | Preparation method of barium metaborate crystal electric field sensor based on angular optical biasing |
Non-Patent Citations (1)
Title |
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铌酸锂光波导和光波导偏振器的研究;冯莹;《国防科学技术大学博士论文集》;20110818;全文 * |
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Effective date of registration: 20231216 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road 44 Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.44 Research Institute |