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CN103197103A - Constructing method and constructing device of nanoscale electrostatic fields - Google Patents

Constructing method and constructing device of nanoscale electrostatic fields Download PDF

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CN103197103A
CN103197103A CN2013100893242A CN201310089324A CN103197103A CN 103197103 A CN103197103 A CN 103197103A CN 2013100893242 A CN2013100893242 A CN 2013100893242A CN 201310089324 A CN201310089324 A CN 201310089324A CN 103197103 A CN103197103 A CN 103197103A
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probe
controlled
insulating material
program
nanoscale
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郭惠芬
雍永亮
张超
李立本
陈庆东
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Henan University of Science and Technology
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Henan University of Science and Technology
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Abstract

The invention discloses a constructing method and a constructing device of nanoscale electrostatic fields. The constructing device comprises a work table, wherein the work table is provided with insulating material provided with a lower electrode, a conducting probe with the nanoscale curvature radius is vertically installed on the upper surface of the insulating material, and the conducting probe is fixed on a micro-cantilever sensitive to weak force and also is grounded; and the work table is driven by a program-controlled actuating device, the lower electrode is connected with an external program-controlled direct-current power source which is controlled by the program-controlled actuating device, an optical system which monitors the position of the probe and the stress degree of the probe is installed above the probe, the optical system transmits detected information to a feedback system through a lock-in amplification system, and the feedback system is connected with the program-controlled actuating device. The method can achieve continuous regulation and arbitrary operation of intensity of the nanoscale electric fields and is simple; and further, injected charge can be written in repeatedly, the electrostatic fields distributed in different spaces can be obtained, and economy is achieved.

Description

The construction method of nanoscale electrostatic field and device
Technical field
The present invention relates to construction method and the device of electrostatic field, relate in particular to construction method and the device of nanoscale electrostatic field.
Background technology
According to the principle of electrostatic field to the strong effect of electrified body; people have invented a series of electrostatic techniques based on electrostatic field, and are widely used in information engineering, space technology, large scale integrated circuit, environmental protection, biotechnology, ore dressing and every field such as separating substances, textile printing and dyeing.Electrostatic field is basis and the core of electrostatic technique.At present, the constructing normally of electrostatic field is connected on metal electrode that the two poles of the earth of power supply realize, electrostatic field is between two metal electrodes, and size is more than micron.Development along with miniaturization of devices, intellectuality, high integrated, high precision certainly will require the size of electrostatic field more and more littler, and the difficult microminiaturized growth requirement that satisfies its size of present electrostatic field construction method.
Summary of the invention
The technical problem to be solved in the present invention is: a kind of construction method and device of nanoscale electrostatic field are provided, and that can realize nanoscale electric field intensity can be in harmonious proportion any manipulation continuously, and method is simple; Can also repeat to write iunjected charge, obtain the electrostatic field that different spaces distributes, economy.
To achieve these goals, the technical solution used in the present invention is: at first using one or more radius-of-curvature is nano level grounded probe, the free charge in the earth is injected into one or more target bit on insulating material surface by DC electric field, and local forms the point charge distribution patterns of nanoscale in this; Remove direct current then, make probe near the above-mentioned insulator surface that has injected free charge, between probe and insulator surface, form electrostatic field (free charge that electrostatic field injects insulator by the first step excites).
Specifically, the construction method of nanoscale electrostatic field may further comprise the steps:
(1) choosing radius-of-curvature is nano level conducting probe and the insulating material that possesses bottom electrode;
(2) insulating material that will possess bottom electrode is fixed on the worktable, and bottom electrode is connected with outside programme-controlled dc power; Conducting probe is arranged at the insulating material upper surface, and described probe stationary is on micro-cantilever, and ground connection;
(3) worktable and outside programme-controlled dc power are controlled by the program control driving device simultaneously, set probe on path that the insulating material upper surface relatively moves and speed, the position of iunjected charge, the required DC voltage that applies in iunjected charge position and burst length, probe path and the exposure level of iunjected charge position probe and film surface by the program control driving device, and move it, form electric field between iunjected charge target bit probe and bottom electrode, the free charge under the effect of this electric field force in greatly is injected into this target bit;
(4) voltage with outside programme-controlled dc power is set at 0, according to probe size and the set by step distribution of the iunjected charge dot matrix of constructing in (3), position and the state at probe place when making the electric field intensity that is excited by iunjected charge between probe and insulating material reach desired value by the setting of program control driving device, and the mode that arrives this position; Its cardinal rule is: avoid probe to contact with iunjected charge; Under the situation that the electric field intensity desired value is determined, iunjected charge electromotive force more high (low) or probe radius-of-curvature more little (greatly), probe contacts more weak (by force) with insulating surface.
(5) probe moves to target bit, and the electrostatic field of nanoscale is constructed and finished.
Described probe top is provided with the optical system of monitoring probe location and stressed degree thereof, and optical system is transported to feedback system to the information that detects through phase-locked amplification system, and feedback system links to each other with the program control driving device.
A kind of building device of nanoscale electrostatic field, comprise a worktable, be placed with the insulating material that possesses bottom electrode on the worktable, the upper surface of insulating material is vertically installed with the conducting probe that radius is nanoscale, conducting probe is fixed on the micro-cantilever, and ground connection, the force constant of micro-cantilever are 0.12～40N/m; Described worktable is driven by the program control driving device, described bottom electrode is connected with the outside programme-controlled dc power that is controlled by the program control driving device, the probe top is provided with the optical system of monitoring probe location and stressed degree thereof, optical system is transported to feedback system to the information that detects through phase-locked amplification system, and feedback system links to each other with the program control driving device.
The radius-of-curvature of described probe is 10 nanometers.
Insulating material is the BaTiO through polishing 3, SrTiO 3Or CaCu 3Ti 4O 12Deng the monocrystalline thin slice, or tens to film of these materials of hundreds of nanometer thickness etc.
The beneficial effect that the present invention brings is:
(1) electric field concentrates on nanometer scale between probe and insulating material surface;
(2) by the traveling probe position, can obtain electric field intensity continually varying nanoscale electrostatic field;
(3) nanoscale is accurately controlled the position of electrostatic field;
(4) nanoscale is regulated and control the distribution of electrostatic field arbitrarily, and method is simple;
(5) can repeat to write iunjected charge, obtain the electrostatic field that different spaces distributes, economy;
(6) the conservation of power energy greatly.
Description of drawings
Fig. 1 is the building device synoptic diagram of nanoscale electrostatic field;
Fig. 2 is probe mobile route synoptic diagram.
Among the figure, 1. program control driving device, 2. worktable, 3. bottom electrode, 4. outside programme-controlled dc power, 5. insulating material, 6. micro-cantilever, 7. probe, 8. optical system, 9. phase-locked amplification system, 10. feedback system, 11. iunjected charge positions, 12. probe mobile routes.
Embodiment
The present invention is described in further detail below in conjunction with drawings and the specific embodiments.
As shown in Figure 1 and Figure 2, a kind of construction method of nanoscale electrostatic field may further comprise the steps:
(1) choosing radius-of-curvature is nano level conducting probe 7 and the insulating material 5 that possesses bottom electrode 3; The radius-of-curvature of present embodiment middle probe 7 is 10 nanometers, and the radius-of-curvature of described probe 7 can be as small as 1 nanometer.Insulating material 5 is the BaTiO of 200 nanometer thickness 3Film.
(2) being grown in La 0.7Sr 0.3MnO 3/ SiO 2In/Si the substrate, the BaTiO of 200 nanometer thickness 3Film is fixed in worktable 2.La 0.7Sr 0.3MnO 3Be bottom electrode 3, make it to be connected with outside programme-controlled dc power 4.Conducting probe 7 is arranged at insulating material 5 upper surfaces, and described probe 7 is fixed on the micro-cantilever 6, and ground connection; Described probe 7 tops are provided with the optical system 8 of monitoring probe 7 positions and stressed degree thereof, and optical system 8 is transported to feedback system 10 to the information that detects through phase-locked amplification system 9, and feedback system 10 links to each other with program control driving device 1.
(3) bonding probes 7 sizes and BaTiO 3The insulating property of film, design use ground connection conducting probe 7 at BaTiO 3Film surface is constructed position and the mode of iunjected charge (namely applying electric field).Such as, construct one 3 * 3, spacing is the iunjected charge dot matrix of 150 nanometers, iunjected charge position 11 and probe mobile route 12 are by shown in Figure 2.
Worktable 2 and outside programme-controlled dc power 4 are simultaneously by 1 control of program control driving device, set on path that probe 7 relatively moves on insulating material 5 surfaces and speed, the position of iunjected charge, the required DC voltage that applies in iunjected charge position and burst length, the probe path and the exposure level of iunjected charge position probe and film surface by program control driving device 1, and move it, at iunjected charge target bit ground connection conducting probe 7 and La 0.7Sr 0.3 MnO 33 of bottom electrodes form electric field, and the free charge under the effect of this electric field force in greatly is injected into target bit, and by local in this.
The pulse polarity at place, injection phase determines the positive and negative of institute's iunjected charge; The size of pulse and time determine amount and the shared bulk of iunjected charge, and it is also more big that voltage is more big, the amount of more long iunjected charge of time is more big, institute takes up space; The probe exposure level also can influence iunjected charge, and iunjected charge increases with contact usually, and the probe but strong excessively contact can be worn and torn causes that radius-of-curvature increase and electric conductivity weaken etc., and then reduces the injection of electric charge, and therefore above parameter must choose reasonable.
(4) voltage with outside programme-controlled dc power 4 is set at 0, distribution according to probe 7 sizes and the iunjected charge dot matrix constructed in (3) set by step, position and the state at probe place when making probe 7 and 5 electric field intensity that excited by iunjected charge of insulating material reach desired value by the setting of program control driving device, and the mode that arrives this position.
(5) probe 7 moves to target bit, is injected into the free charge of film surface at probe 7 and BaTiO in step this moment (3) 3Form electric field (the outside programmable power supply of this process is not worked) between the film, the electrostatic field of nanoscale is constructed and is finished.Because the radius-of-curvature of probe 7 is 10 nanometers, so the electric field between probe 7 and film is limited in the order of magnitude of nanometer.
A kind of building device of nanoscale electrostatic field, comprise worktable 2, be placed with the insulating material 5 that possesses bottom electrode 3 on the worktable 2, the upper surface of insulating material 5 is vertically installed with the conducting probe 7 that radius-of-curvature is nanoscale, probe 7 is fixed on the micro-cantilever 6 to faint power sensitivity, and ground connection; Described worktable 2 is driven by program control driving device 1, described bottom electrode 3 is connected with the outside programme-controlled dc power 4 that is controlled by program control driving device 1, probe 7 tops are provided with the optical system 8 of monitoring probe 7 positions and stressed degree thereof, optical system 8 is transported to feedback system 10 to the information that detects through phase-locked amplification system 9, and feedback system 10 links to each other with program control driving device 1.Wherein, but worktable, optical system, phase-locked amplification system, feedback system and program control driving device referencing atom force microscope.Be that the conducting probe of nanoscale injects the insulating material surface to the electric charge in the earth by radius-of-curvature under the direct current effect at first, and local is in this, direct current then breaks; Probe is again near insulating material, and the probe bottom produces and produces the nanoscale electrostatic field by above iunjected charge between probe and insulating material.

Claims (5)

1.纳米尺度静电场的构筑方法，其特征在于，包含以下步骤： 1. The construction method of nanoscale electrostatic field, is characterized in that, comprises the following steps: （1）选取曲率半径为纳米级的导电探针和具备下电极的绝缘材料； (1) Select a conductive probe with a radius of curvature of nanometer scale and an insulating material with a lower electrode; （2）将具备下电极的绝缘材料固定于工作台上，下电极与外部程控直流电源相连接；导电探针设置于绝缘材料上表面，所述探针固定在微悬臂上，且接地； (2) The insulating material with the lower electrode is fixed on the workbench, and the lower electrode is connected to an external program-controlled DC power supply; the conductive probe is set on the upper surface of the insulating material, and the probe is fixed on the micro-cantilever and grounded; （3）工作台和外部程控直流电源同时由程控驱动装置控制，通过程控驱动装置设定探针在绝缘材料上表面相对移动的路径及速度、注入电荷的位置、注入电荷位置处所需施加的直流电压以及脉冲时间、探针路径上和注入电荷位置处探针与薄膜表面的接触程度，并运行之，在注入电荷目标位探针和下电极间形成电场，在该电场力的作用下大地中的自由电荷被注入该目标位； (3) The workbench and the external program-controlled DC power supply are controlled by the program-controlled drive device at the same time, and the path and speed of the relative movement of the probe on the upper surface of the insulating material, the position of the injected charge, and the required force to be applied at the position of the injected charge are set by the program-controlled drive device. DC voltage and pulse time, the degree of contact between the probe and the surface of the film on the probe path and at the position of the injected charge, and run it to form an electric field between the probe at the target position of the injected charge and the lower electrode. Under the action of the electric field force, the ground The free charge in is injected into the target site; （4）将外部程控直流电源的电压设定为0，根据探针尺寸和按步骤（3）中构筑的注入电荷点阵的分布，通过程控驱动装置设定使探针和绝缘材料间由注入电荷激发的电场强度达到目标值时探针所在的位置和状态，以及到达该位置的方式； (4) Set the voltage of the external program-controlled DC power supply to 0, and according to the size of the probe and the distribution of the injected charge lattice constructed in step (3), set the distance between the probe and the insulating material through the program-controlled driving device. The position and state of the probe when the electric field strength excited by the charge reaches the target value, and the way to reach this position; （5）探针运行至目标位，纳米尺度的静电场构筑完成。 (5) The probe moves to the target position, and the construction of the nanoscale electrostatic field is completed. 2.根据权利要求1所述的纳米尺度静电场的构筑方法，其特征在于：探针上方设有监控探针位置及其受力程度的光学系统，光学系统把探测到的信息经锁相放大系统输送到反馈系统，反馈系统和程控驱动装置相连。 2. The construction method of the nanoscale electrostatic field according to claim 1, characterized in that: the probe is provided with an optical system for monitoring the position of the probe and the degree of stress thereof, and the optical system amplifies the detected information through lock-in The system feeds into a feedback system, which is connected to a programmable drive. 3.纳米尺度静电场的构筑装置，其特征在于：包括一工作台，工作台上放置有具备下电极的绝缘材料，绝缘材料的上表面垂直设置有曲率半径为纳米尺度的导电探针，导电探针固定在微悬臂上，且接地，微悬臂的力常数为0.12～40N/m；所述工作台由程控驱动装置驱动，所述下电极与受控于程控驱动装置的外部程控直流电源相连接，探针上方设有监控探针位置及其受力程度的光学系统，光学系统把探测到的信息经锁相放大系统输送到反馈系统，反馈系统和程控驱动装置相连。 3. The construction device of the nanoscale electrostatic field is characterized in that: it includes a workbench, an insulating material with a lower electrode is placed on the workbench, and the upper surface of the insulating material is vertically provided with a conductive probe with a curvature radius of nanometer scale. The probe is fixed on the micro-cantilever and grounded. The force constant of the micro-cantilever is 0.12-40N/m; the workbench is driven by a program-controlled driving device, and the lower electrode is connected to an external program-controlled DC power supply controlled by the program-controlled driving device. Connection, above the probe is equipped with an optical system for monitoring the position of the probe and its force level, the optical system transmits the detected information to the feedback system through the lock-in amplification system, and the feedback system is connected with the program-controlled driving device. 4.根据权利要求3所述的纳米尺度静电场的构筑装置，其特征在于：所述探针的曲率半径为10纳米。 4 . The device for constructing a nanoscale electrostatic field according to claim 3 , wherein the radius of curvature of the probe is 10 nanometers. 5.根据权利要求3所述的纳米尺度静电场的构筑装置，其特征在于：绝缘材料为经抛光的BaTiO3、SrTiO3或CaCu3Ti4O12。 5 . The nanoscale electrostatic field construction device according to claim 3 , wherein the insulating material is polished BaTiO 3 , SrTiO 3 or CaCu 3 Ti 4 O 12 .
CN2013100893242A 2013-03-20 2013-03-20 Constructing method and constructing device of nanoscale electrostatic fields Pending CN103197103A (en)

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CN113138294A (en) * 2020-01-20 2021-07-20 西安电子科技大学 Method for regulating and controlling concentration of two-dimensional electron gas

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CN113138294B (en) * 2020-01-20 2022-07-22 西安电子科技大学 A method for regulating the concentration of two-dimensional electron gas

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Application publication date: 20130710