Numerical control feedback semiconductor laser frequency stabilizing apparatus
Technical field
The present invention relates to the laser frequency stabilization technology, specifically is a kind of numerical control feedback semiconductor laser frequency stabilizing apparatus.
Background technology
Semiconductor laser is widely used in fields such as optical communication, optical information read-write and laser spectroscopy because it has advantages such as volume is little, in light weight, running is reliable, low in energy consumption.But the spectral line of semiconductor laser is wideer, stability is relatively poor.Therefore, compare with other laser (as the He-Ne laser), poor, the poor stability of laser coherence of semiconductor laser output has seriously restricted the application of semiconductor laser.In order to guarantee that semiconductor laser can extensive use, need the laser frequency of noise spectra of semiconductor lasers to stablize.Under the prior art condition, mainly be divided into the laser frequency stabilization technology of utilizing atom or molecule absorption line and the laser frequency stabilization technology of utilizing confocal Fabry-Perot-type cavity at the laser frequency stabilization technology of semiconductor laser.Wherein, the laser frequency stabilization technology of utilizing atom or molecule absorption line be with atom or molecule absorption line as the absolute frequency reference, so it can only be with the laser frequency stabilization of semiconductor laser on characteristic frequency.The laser frequency stabilization technology of utilizing confocal Fabry-Perot-type cavity has very high requirement to long-term stability and the fineness of confocal Fabry-Perot-type cavity, so it can only the laser frequency of noise spectra of semiconductor lasers be stablized in specific band scope (being generally tens nanometers).In sum, existing laser frequency stabilization technology since self principle limit, all can't be with the laser frequency stabilization of semiconductor laser on optional frequency.Based on this, be necessary to invent a kind of brand-new laser frequency stabilization device, can't be with the problem of laser frequency stabilization on optional frequency of semiconductor laser to solve existing laser frequency stabilization technology.
Summary of the invention
The present invention can't provide a kind of numerical control feedback semiconductor laser frequency stabilizing apparatus with the problem of laser frequency stabilization on optional frequency of semiconductor laser in order to solve existing laser frequency stabilization technology.
The present invention adopts following technical scheme to realize: numerical control feedback semiconductor laser frequency stabilizing apparatus comprises He-Ne laser, semiconductor laser, thermostat, vacuum cavity, vacuum pump, first photodetector, second photodetector, NI data collecting card, high-voltage amplifier, computer and voltage divider; Wherein, be provided with by first total reflective mirror, second total reflective mirror, confocal Fabry-Perot-type cavity between the exit end of He-Ne laser and first photodetector and be connected in series the light path that forms successively; Be provided with by the 3rd total reflective mirror, the 4th total reflective mirror, confocal Fabry-Perot-type cavity between the exit end of semiconductor laser and second photodetector and be connected in series the light path that forms successively; Be separately installed with semiconductor cooler, thermistor, piezoelectric ceramic on the cavity of confocal Fabry-Perot-type cavity; Confocal Fabry-Perot-type cavity, semiconductor cooler, thermistor, piezoelectric ceramic all are located in the vacuum cavity; Be connected with a BNC line between first photodetector and the NI data collecting card; Be connected with the 2nd BNC line between second photodetector and the NI data collecting card; Be connected with the 3rd BNC line between piezoelectric ceramic and the high-voltage amplifier; Be connected with the 4th BNC line between NI data collecting card and the high-voltage amplifier; Be connected with the 5th BNC line between NI data collecting card and the voltage divider; Be connected with the 6th BNC line between voltage divider and the semiconductor laser; Be connected with first lead between thermistor and the thermostat; Semiconductor cooler and thermostat are connected with second lead; Be communicated with vacuum line between vacuum pump and the vacuum cavity; NI data collecting card and computer are connected with the data card slot.
During work, the laser of the frequency stabilization of He-Ne laser output incides confocal Fabry-Perot-type cavity through first total reflective mirror, second total reflective mirror successively.When the frequency of laser satisfied the transmission condition of confocal Fabry-Perot-type cavity, first photodetector detected the laser of He-Ne laser output.The unsettled laser of frequency of semiconductor laser output incides confocal Fabry-Perot-type cavity through the 3rd total reflective mirror, the 4th total reflective mirror successively.When the frequency of laser satisfied the transmission condition of confocal Fabry-Perot-type cavity, second photodetector detected the laser of semiconductor laser output.The triangular signal of NI data collecting card output amplifies through high-voltage amplifier and is applied on the piezoelectric ceramic, to change the cavity length of confocal Fabry-Perot-type cavity.By regulating the triangular signal of NI data collecting card output, make the transmission peaks of twice adjacent He-Ne laser output laser and the transmission peaks of a semiconductor laser output laser in a scan period of triangular signal, to occur.The transmission peaks of laser exported the He-Ne laser that detects respectively by first photodetector and second photodetector and the transmission peaks of semiconductor laser output laser is input in the NI data collecting card.Be implanted into the control program that adopts Labview software to finish to computer, with control NI data collecting card.The NI data collecting card calculates the transmission peaks of twice He-Ne laser output laser in the triangular voltage sweep cycle and the peak-to-peak relative position relation of transmission of a semiconductor laser output laser, and the relative position relation that calculates and pre-set position relation compared, convert the difference that relatively obtains to magnitude of voltage then, then magnitude of voltage is fed back on the semiconductor laser through voltage divider, to regulate the laser frequency of semiconductor laser, thereby the laser frequency of noise spectra of semiconductor lasers is stablized, as shown in Figure 2.In this process, thermostat is gathered the temperature signal of confocal Fabry-Perot-type cavity by thermistor, and temperature signal is delivered on the semiconductor cooler, keep constant with the temperature of controlling confocal Fabry-Perot-type cavity, avoided thus changing rapidly because of the transmission peaks of the excessive He-Ne of the causing laser of the variations in temperature of confocal Fabry-Perot-type cavity output laser and the peak-to-peak relative position relation of transmission of semiconductor laser output laser, thereby further guaranteed laser frequency stable of semiconductor laser.Vacuum pump vacuumizes vacuum cavity by vacuum line, avoided thus because the flow transmission peaks cause He-Ne laser output laser and the peak-to-peak relative position relation of transmission of semiconductor laser output laser of environmental air changes rapidly, thereby further guaranteed laser frequency stable of semiconductor laser.Voltage divider is used for regulating the precision of feedback voltage value, thereby has improved the stablizing effect of the laser frequency of semiconductor laser.Based on said process, compare with existing laser frequency stabilization technology, numerical control feedback semiconductor laser frequency stabilizing apparatus of the present invention has been realized laser frequency stabilization with semiconductor laser on optional frequency, thereby has guaranteed that semiconductor laser can extensive use.
Further, on the cavity of confocal Fabry-Perot-type cavity manual piezoelectric ceramic is installed.During work, put on voltage on the manual piezoelectric ceramic by manual control, to change the cavity length of confocal Fabry-Perot-type cavity, export the transmission peaks of laser and the peak-to-peak suitable relative position relation of transmission of semiconductor laser output laser thereby obtain the He-Ne laser.
The present invention efficiently solves existing laser frequency stabilization technology can't be applicable to fields such as optical communication, optical information read-write and laser spectroscopy with the problem of laser frequency stabilization on optional frequency of semiconductor laser.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the frequency curve comparison diagram before and after the laser frequency of noise spectra of semiconductor lasers is stablized among the present invention.
Among the figure: 1-He-Ne laser, 2-semiconductor laser, 3-first total reflective mirror, 4-second total reflective mirror, 5-the 3rd total reflective mirror, 6-the 4th total reflective mirror, the confocal Fabry-Perot-type cavity of 7-, 8-semiconductor cooler, 9-thermistor, the 10-thermostat, 11-vacuum cavity, 12-vacuum pump, the 13-piezoelectric ceramic, 14-first photodetector, 15-second photodetector, the 16-NI data collecting card, 17-high-voltage amplifier, 18-computer, the 19-voltage divider, 20-the one BNC line, 21-the 2nd BNC line, 22-the 3rd BNC line, 23-the 4th BNC line, 24-the 5th BNC line, 25-the 6th BNC line, 26-first lead, 27-second lead, the 28-vacuum line, 29-data card slot, the manual piezoelectric ceramic of 30-.
Embodiment
Numerical control feedback semiconductor laser frequency stabilizing apparatus comprises He-Ne laser 1, semiconductor laser 2, thermostat 10, vacuum cavity 11, vacuum pump 12, first photodetector 14, second photodetector 15, NI data collecting card 16, high-voltage amplifier 17, computer 18 and voltage divider 19; Wherein, be provided with by first total reflective mirror 3, second total reflective mirror 4, confocal Fabry-Perot-type cavity 7 between the exit end of He-Ne laser 1 and first photodetector 14 and be connected in series the light path that forms successively; Be provided with by the 3rd total reflective mirror 5, the 4th total reflective mirror 6, confocal Fabry-Perot-type cavity 7 between the exit end of semiconductor laser 2 and second photodetector 15 and be connected in series the light path that forms successively; Be separately installed with semiconductor cooler 8, thermistor 9, piezoelectric ceramic 13 on the cavity of confocal Fabry-Perot-type cavity 7; Confocal Fabry-Perot-type cavity 7, semiconductor cooler 8, thermistor 9, piezoelectric ceramic 13 all are located in the vacuum cavity 11; Be connected with a BNC line 20 between first photodetector 14 and the NI data collecting card 16; Be connected with the 2nd BNC line 21 between second photodetector 15 and the NI data collecting card 16; Be connected with the 3rd BNC line 22 between piezoelectric ceramic 13 and the high-voltage amplifier 17; Be connected with the 4th BNC line 23 between NI data collecting card 16 and the high-voltage amplifier 17; Be connected with the 5th BNC line 24 between NI data collecting card 16 and the voltage divider 19; Be connected with the 6th BNC line 25 between voltage divider 19 and the semiconductor laser 2; Be connected with first lead 26 between thermistor 9 and the thermostat 10; Semiconductor cooler 8 is connected with second lead 27 with thermostat 10; Be communicated with vacuum line 28 between vacuum pump 12 and the vacuum cavity 11; NI data collecting card 16 is connected with data card slot 29 with computer 18;
Manual piezoelectric ceramic 30 is installed on the cavity of confocal Fabry-Perot-type cavity 7;
During concrete enforcement, He-Ne laser 1 adopts EL08-633 type He-Ne laser.Semiconductor laser 2 adopts DL100 780nm type semiconductor laser.First total reflective mirror 3, second total reflective mirror 4, the 3rd total reflective mirror 5, the 4th total reflective mirror 6 all adopt the total reflective mirror of plating 600-1000nm broadband high-reflecting film.The cavity length of confocal Fabry-Perot-type cavity 7 is 10cm.Thermostat 10 adopts TED4015 type thermostat.The size of vacuum cavity 11 is 200*80*80mm.Vacuum pump 12 adopts pascal 2005 type vacuum pumps.First photodetector 14 and second photodetector 15 all adopt Hamamatsu S3884 type photodetector.NI data collecting card 16 adopts PCI-6014 type data collecting card.High-voltage amplifier 17 adopts MDT694A type high-voltage amplifier.