[go: up one dir, main page]

CN103187685A - Frequency stabilizing device for numerical control feedback semiconductor laser - Google Patents

Frequency stabilizing device for numerical control feedback semiconductor laser Download PDF

Info

Publication number
CN103187685A
CN103187685A CN2013100552017A CN201310055201A CN103187685A CN 103187685 A CN103187685 A CN 103187685A CN 2013100552017 A CN2013100552017 A CN 2013100552017A CN 201310055201 A CN201310055201 A CN 201310055201A CN 103187685 A CN103187685 A CN 103187685A
Authority
CN
China
Prior art keywords
laser
semiconductor laser
photodetector
cavity
perot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2013100552017A
Other languages
Chinese (zh)
Other versions
CN103187685B (en
Inventor
赵延霆
肖连团
贾锁堂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanxi University
Original Assignee
Shanxi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanxi University filed Critical Shanxi University
Priority to CN201310055201.7A priority Critical patent/CN103187685B/en
Publication of CN103187685A publication Critical patent/CN103187685A/en
Application granted granted Critical
Publication of CN103187685B publication Critical patent/CN103187685B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

本发明涉及激光频率稳定技术,具体是一种数控反馈半导体激光器频率稳定装置。本发明解决了现有激光频率稳定技术无法将半导体激光器的激光频率稳定在任意频率上的问题。数控反馈半导体激光器频率稳定装置包括He-Ne激光器、半导体激光器、控温器、真空腔体、真空泵、第一光电探测器、第二光电探测器、NI数据采集卡、高压放大器、计算机、以及分压器;其中,He-Ne激光器的出射端与第一光电探测器之间设有由第一全反镜、第二全反镜、共焦法布里-珀罗腔依次串接而成的光路。本发明适用于光通信、光信息读写和激光光谱等领域。

The invention relates to a laser frequency stabilization technology, in particular to a frequency stabilization device for a digitally controlled feedback semiconductor laser. The invention solves the problem that the existing laser frequency stabilization technology cannot stabilize the laser frequency of the semiconductor laser at any frequency. Numerical control feedback semiconductor laser frequency stabilization device includes He-Ne laser, semiconductor laser, temperature controller, vacuum cavity, vacuum pump, first photodetector, second photodetector, NI data acquisition card, high voltage amplifier, computer, and distribution pressure device; wherein, between the output end of the He-Ne laser and the first photodetector, there is a series connection between the first total reflection mirror, the second total reflection mirror and the confocal Fabry-Perot cavity. light path. The invention is applicable to the fields of optical communication, optical information reading and writing, laser spectrum and the like.

Description

Numerical control feedback semiconductor laser frequency stabilizing apparatus
Technical field
The present invention relates to the laser frequency stabilization technology, specifically is a kind of numerical control feedback semiconductor laser frequency stabilizing apparatus.
Background technology
Semiconductor laser is widely used in fields such as optical communication, optical information read-write and laser spectroscopy because it has advantages such as volume is little, in light weight, running is reliable, low in energy consumption.But the spectral line of semiconductor laser is wideer, stability is relatively poor.Therefore, compare with other laser (as the He-Ne laser), poor, the poor stability of laser coherence of semiconductor laser output has seriously restricted the application of semiconductor laser.In order to guarantee that semiconductor laser can extensive use, need the laser frequency of noise spectra of semiconductor lasers to stablize.Under the prior art condition, mainly be divided into the laser frequency stabilization technology of utilizing atom or molecule absorption line and the laser frequency stabilization technology of utilizing confocal Fabry-Perot-type cavity at the laser frequency stabilization technology of semiconductor laser.Wherein, the laser frequency stabilization technology of utilizing atom or molecule absorption line be with atom or molecule absorption line as the absolute frequency reference, so it can only be with the laser frequency stabilization of semiconductor laser on characteristic frequency.The laser frequency stabilization technology of utilizing confocal Fabry-Perot-type cavity has very high requirement to long-term stability and the fineness of confocal Fabry-Perot-type cavity, so it can only the laser frequency of noise spectra of semiconductor lasers be stablized in specific band scope (being generally tens nanometers).In sum, existing laser frequency stabilization technology since self principle limit, all can't be with the laser frequency stabilization of semiconductor laser on optional frequency.Based on this, be necessary to invent a kind of brand-new laser frequency stabilization device, can't be with the problem of laser frequency stabilization on optional frequency of semiconductor laser to solve existing laser frequency stabilization technology.
Summary of the invention
The present invention can't provide a kind of numerical control feedback semiconductor laser frequency stabilizing apparatus with the problem of laser frequency stabilization on optional frequency of semiconductor laser in order to solve existing laser frequency stabilization technology.
The present invention adopts following technical scheme to realize: numerical control feedback semiconductor laser frequency stabilizing apparatus comprises He-Ne laser, semiconductor laser, thermostat, vacuum cavity, vacuum pump, first photodetector, second photodetector, NI data collecting card, high-voltage amplifier, computer and voltage divider; Wherein, be provided with by first total reflective mirror, second total reflective mirror, confocal Fabry-Perot-type cavity between the exit end of He-Ne laser and first photodetector and be connected in series the light path that forms successively; Be provided with by the 3rd total reflective mirror, the 4th total reflective mirror, confocal Fabry-Perot-type cavity between the exit end of semiconductor laser and second photodetector and be connected in series the light path that forms successively; Be separately installed with semiconductor cooler, thermistor, piezoelectric ceramic on the cavity of confocal Fabry-Perot-type cavity; Confocal Fabry-Perot-type cavity, semiconductor cooler, thermistor, piezoelectric ceramic all are located in the vacuum cavity; Be connected with a BNC line between first photodetector and the NI data collecting card; Be connected with the 2nd BNC line between second photodetector and the NI data collecting card; Be connected with the 3rd BNC line between piezoelectric ceramic and the high-voltage amplifier; Be connected with the 4th BNC line between NI data collecting card and the high-voltage amplifier; Be connected with the 5th BNC line between NI data collecting card and the voltage divider; Be connected with the 6th BNC line between voltage divider and the semiconductor laser; Be connected with first lead between thermistor and the thermostat; Semiconductor cooler and thermostat are connected with second lead; Be communicated with vacuum line between vacuum pump and the vacuum cavity; NI data collecting card and computer are connected with the data card slot.
During work, the laser of the frequency stabilization of He-Ne laser output incides confocal Fabry-Perot-type cavity through first total reflective mirror, second total reflective mirror successively.When the frequency of laser satisfied the transmission condition of confocal Fabry-Perot-type cavity, first photodetector detected the laser of He-Ne laser output.The unsettled laser of frequency of semiconductor laser output incides confocal Fabry-Perot-type cavity through the 3rd total reflective mirror, the 4th total reflective mirror successively.When the frequency of laser satisfied the transmission condition of confocal Fabry-Perot-type cavity, second photodetector detected the laser of semiconductor laser output.The triangular signal of NI data collecting card output amplifies through high-voltage amplifier and is applied on the piezoelectric ceramic, to change the cavity length of confocal Fabry-Perot-type cavity.By regulating the triangular signal of NI data collecting card output, make the transmission peaks of twice adjacent He-Ne laser output laser and the transmission peaks of a semiconductor laser output laser in a scan period of triangular signal, to occur.The transmission peaks of laser exported the He-Ne laser that detects respectively by first photodetector and second photodetector and the transmission peaks of semiconductor laser output laser is input in the NI data collecting card.Be implanted into the control program that adopts Labview software to finish to computer, with control NI data collecting card.The NI data collecting card calculates the transmission peaks of twice He-Ne laser output laser in the triangular voltage sweep cycle and the peak-to-peak relative position relation of transmission of a semiconductor laser output laser, and the relative position relation that calculates and pre-set position relation compared, convert the difference that relatively obtains to magnitude of voltage then, then magnitude of voltage is fed back on the semiconductor laser through voltage divider, to regulate the laser frequency of semiconductor laser, thereby the laser frequency of noise spectra of semiconductor lasers is stablized, as shown in Figure 2.In this process, thermostat is gathered the temperature signal of confocal Fabry-Perot-type cavity by thermistor, and temperature signal is delivered on the semiconductor cooler, keep constant with the temperature of controlling confocal Fabry-Perot-type cavity, avoided thus changing rapidly because of the transmission peaks of the excessive He-Ne of the causing laser of the variations in temperature of confocal Fabry-Perot-type cavity output laser and the peak-to-peak relative position relation of transmission of semiconductor laser output laser, thereby further guaranteed laser frequency stable of semiconductor laser.Vacuum pump vacuumizes vacuum cavity by vacuum line, avoided thus because the flow transmission peaks cause He-Ne laser output laser and the peak-to-peak relative position relation of transmission of semiconductor laser output laser of environmental air changes rapidly, thereby further guaranteed laser frequency stable of semiconductor laser.Voltage divider is used for regulating the precision of feedback voltage value, thereby has improved the stablizing effect of the laser frequency of semiconductor laser.Based on said process, compare with existing laser frequency stabilization technology, numerical control feedback semiconductor laser frequency stabilizing apparatus of the present invention has been realized laser frequency stabilization with semiconductor laser on optional frequency, thereby has guaranteed that semiconductor laser can extensive use.
Further, on the cavity of confocal Fabry-Perot-type cavity manual piezoelectric ceramic is installed.During work, put on voltage on the manual piezoelectric ceramic by manual control, to change the cavity length of confocal Fabry-Perot-type cavity, export the transmission peaks of laser and the peak-to-peak suitable relative position relation of transmission of semiconductor laser output laser thereby obtain the He-Ne laser.
The present invention efficiently solves existing laser frequency stabilization technology can't be applicable to fields such as optical communication, optical information read-write and laser spectroscopy with the problem of laser frequency stabilization on optional frequency of semiconductor laser.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the frequency curve comparison diagram before and after the laser frequency of noise spectra of semiconductor lasers is stablized among the present invention.
Among the figure: 1-He-Ne laser, 2-semiconductor laser, 3-first total reflective mirror, 4-second total reflective mirror, 5-the 3rd total reflective mirror, 6-the 4th total reflective mirror, the confocal Fabry-Perot-type cavity of 7-, 8-semiconductor cooler, 9-thermistor, the 10-thermostat, 11-vacuum cavity, 12-vacuum pump, the 13-piezoelectric ceramic, 14-first photodetector, 15-second photodetector, the 16-NI data collecting card, 17-high-voltage amplifier, 18-computer, the 19-voltage divider, 20-the one BNC line, 21-the 2nd BNC line, 22-the 3rd BNC line, 23-the 4th BNC line, 24-the 5th BNC line, 25-the 6th BNC line, 26-first lead, 27-second lead, the 28-vacuum line, 29-data card slot, the manual piezoelectric ceramic of 30-.
Embodiment
Numerical control feedback semiconductor laser frequency stabilizing apparatus comprises He-Ne laser 1, semiconductor laser 2, thermostat 10, vacuum cavity 11, vacuum pump 12, first photodetector 14, second photodetector 15, NI data collecting card 16, high-voltage amplifier 17, computer 18 and voltage divider 19; Wherein, be provided with by first total reflective mirror 3, second total reflective mirror 4, confocal Fabry-Perot-type cavity 7 between the exit end of He-Ne laser 1 and first photodetector 14 and be connected in series the light path that forms successively; Be provided with by the 3rd total reflective mirror 5, the 4th total reflective mirror 6, confocal Fabry-Perot-type cavity 7 between the exit end of semiconductor laser 2 and second photodetector 15 and be connected in series the light path that forms successively; Be separately installed with semiconductor cooler 8, thermistor 9, piezoelectric ceramic 13 on the cavity of confocal Fabry-Perot-type cavity 7; Confocal Fabry-Perot-type cavity 7, semiconductor cooler 8, thermistor 9, piezoelectric ceramic 13 all are located in the vacuum cavity 11; Be connected with a BNC line 20 between first photodetector 14 and the NI data collecting card 16; Be connected with the 2nd BNC line 21 between second photodetector 15 and the NI data collecting card 16; Be connected with the 3rd BNC line 22 between piezoelectric ceramic 13 and the high-voltage amplifier 17; Be connected with the 4th BNC line 23 between NI data collecting card 16 and the high-voltage amplifier 17; Be connected with the 5th BNC line 24 between NI data collecting card 16 and the voltage divider 19; Be connected with the 6th BNC line 25 between voltage divider 19 and the semiconductor laser 2; Be connected with first lead 26 between thermistor 9 and the thermostat 10; Semiconductor cooler 8 is connected with second lead 27 with thermostat 10; Be communicated with vacuum line 28 between vacuum pump 12 and the vacuum cavity 11; NI data collecting card 16 is connected with data card slot 29 with computer 18;
Manual piezoelectric ceramic 30 is installed on the cavity of confocal Fabry-Perot-type cavity 7;
During concrete enforcement, He-Ne laser 1 adopts EL08-633 type He-Ne laser.Semiconductor laser 2 adopts DL100 780nm type semiconductor laser.First total reflective mirror 3, second total reflective mirror 4, the 3rd total reflective mirror 5, the 4th total reflective mirror 6 all adopt the total reflective mirror of plating 600-1000nm broadband high-reflecting film.The cavity length of confocal Fabry-Perot-type cavity 7 is 10cm.Thermostat 10 adopts TED4015 type thermostat.The size of vacuum cavity 11 is 200*80*80mm.Vacuum pump 12 adopts pascal 2005 type vacuum pumps.First photodetector 14 and second photodetector 15 all adopt Hamamatsu S3884 type photodetector.NI data collecting card 16 adopts PCI-6014 type data collecting card.High-voltage amplifier 17 adopts MDT694A type high-voltage amplifier.

Claims (2)

1.一种数控反馈半导体激光器频率稳定装置,其特征在于:包括He-Ne激光器(1)、半导体激光器(2)、控温器(10)、真空腔体(11)、真空泵(12)、第一光电探测器(14)、第二光电探测器(15)、NI数据采集卡(16)、高压放大器(17)、计算机(18)、以及分压器(19);其中,He-Ne激光器(1)的出射端与第一光电探测器(14)之间设有由第一全反镜(3)、第二全反镜(4)、共焦法布里-珀罗腔(7)依次串接而成的光路;半导体激光器(2)的出射端与第二光电探测器(15)之间设有由第三全反镜(5)、第四全反镜(6)、共焦法布里-珀罗腔(7)依次串接而成的光路;共焦法布里-珀罗腔(7)的腔体上分别安装有半导体制冷器(8)、热敏电阻(9)、压电陶瓷(13);共焦法布里-珀罗腔(7)、半导体制冷器(8)、热敏电阻(9)、压电陶瓷(13)均设于真空腔体(11)内;第一光电探测器(14)与NI数据采集卡(16)之间连接有第一BNC线(20);第二光电探测器(15)与NI数据采集卡(16)之间连接有第二BNC线(21);压电陶瓷(13)与高压放大器(17)之间连接有第三BNC线(22);NI数据采集卡(16)与高压放大器(17)之间连接有第四BNC线(23);NI数据采集卡(16)与分压器(19)之间连接有第五BNC线(24);分压器(19)与半导体激光器(2)之间连接有第六BNC线(25);热敏电阻(9)与控温器(10)之间连接有第一导线(26);半导体制冷器(8)与控温器(10)连接有第二导线(27);真空泵(12)与真空腔体(11)之间连通有真空管路(28);NI数据采集卡(16)与计算机(18)连接有数据卡插槽(29)。 1. A digitally controlled feedback semiconductor laser frequency stabilization device, characterized in that it includes a He-Ne laser (1), a semiconductor laser (2), a temperature controller (10), a vacuum cavity (11), a vacuum pump (12), The first photodetector (14), the second photodetector (15), the NI data acquisition card (16), the high-voltage amplifier (17), the computer (18), and the voltage divider (19); wherein, He-Ne Between the output end of the laser (1) and the first photodetector (14), there is a first total reflection mirror (3), a second total reflection mirror (4), a confocal Fabry-Perot cavity (7 ) are connected in series in sequence; a third total reflection mirror (5), a fourth total reflection mirror (6), a total An optical path composed of focal Fabry-Perot cavities (7) connected in series; semiconductor refrigerators (8), thermistors (9 ), piezoelectric ceramics (13); confocal Fabry-Perot cavity (7), semiconductor refrigerator (8), thermistor (9), piezoelectric ceramics (13) are all located in the vacuum cavity (11 ); the first BNC line (20) is connected between the first photodetector (14) and the NI data acquisition card (16); the connection between the second photodetector (15) and the NI data acquisition card (16) There is a second BNC line (21); a third BNC line (22) is connected between the piezoelectric ceramic (13) and the high-voltage amplifier (17); there is a connection between the NI data acquisition card (16) and the high-voltage amplifier (17) The fourth BNC line (23); the fifth BNC line (24) is connected between the NI data acquisition card (16) and the voltage divider (19); the voltage divider (19) is connected with the semiconductor laser (2) The sixth BNC line (25); the first wire (26) is connected between the thermistor (9) and the temperature controller (10); the second wire is connected between the semiconductor refrigerator (8) and the temperature controller (10) (27); a vacuum pipeline (28) is communicated between the vacuum pump (12) and the vacuum chamber (11); the NI data acquisition card (16) is connected to the computer (18) with a data card slot (29). 2.根据权利要求1所述的数控反馈半导体激光器频率稳定装置,其特征在于:共焦法布里-珀罗腔(7)的腔体上安装有手控压电陶瓷(30)。 2. The digitally controlled feedback semiconductor laser frequency stabilization device according to claim 1, characterized in that: the cavity of the confocal Fabry-Perot cavity (7) is equipped with a hand-controlled piezoelectric ceramic (30).
CN201310055201.7A 2013-02-21 2013-02-21 Numerical control feedback semiconductor laser frequency stabilizing apparatus Expired - Fee Related CN103187685B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310055201.7A CN103187685B (en) 2013-02-21 2013-02-21 Numerical control feedback semiconductor laser frequency stabilizing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310055201.7A CN103187685B (en) 2013-02-21 2013-02-21 Numerical control feedback semiconductor laser frequency stabilizing apparatus

Publications (2)

Publication Number Publication Date
CN103187685A true CN103187685A (en) 2013-07-03
CN103187685B CN103187685B (en) 2016-03-30

Family

ID=48678728

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310055201.7A Expired - Fee Related CN103187685B (en) 2013-02-21 2013-02-21 Numerical control feedback semiconductor laser frequency stabilizing apparatus

Country Status (1)

Country Link
CN (1) CN103187685B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409960A (en) * 2014-11-26 2015-03-11 山西大学 Automatic laser frequency stabilizing device and method
CN107171175A (en) * 2017-07-06 2017-09-15 中国科学院武汉物理与数学研究所 It is a kind of to carry out the Fabry Perot chamber device of multiple laser frequency stabilization simultaneously
CN111224310A (en) * 2018-11-27 2020-06-02 中国科学院大连化学物理研究所 A frequency locking system and method for a single longitudinal mode mid-infrared OPO laser
CN111555108A (en) * 2020-05-14 2020-08-18 山西大学 High-stability Fabry-Perot cavity device and laser output system applying same
CN111954961A (en) * 2018-04-16 2020-11-17 三菱电机株式会社 Optical module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006007756A2 (en) * 2004-12-16 2006-01-26 Vectronix Ag Not temperature stabilized pulsed laser diode and all fibre power amplifier
CN102508231A (en) * 2011-10-28 2012-06-20 清华大学 Fabry-Perot interference absolute distance measurement method based on femtosecond optical frequency comb and device thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006007756A2 (en) * 2004-12-16 2006-01-26 Vectronix Ag Not temperature stabilized pulsed laser diode and all fibre power amplifier
CN102508231A (en) * 2011-10-28 2012-06-20 清华大学 Fabry-Perot interference absolute distance measurement method based on femtosecond optical frequency comb and device thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
姬中华等: "数字伺服系统实现激光器频率长期锁定", 《中国激光》, vol. 36, no. 4, 30 April 2009 (2009-04-30), pages 804 - 808 *
孟腾飞: "铯分子饱和吸收谱的半导体激光器稳频", 《中国激光》, vol. 37, no. 5, 30 May 2010 (2010-05-30), pages 1182 - 1185 *
杨海菁等: "基于共焦法布里-珀罗腔的无调制激光频率锁定", 《中国激光》, vol. 33, no. 3, 31 March 2006 (2006-03-31), pages 316 - 320 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409960A (en) * 2014-11-26 2015-03-11 山西大学 Automatic laser frequency stabilizing device and method
CN104409960B (en) * 2014-11-26 2017-08-11 山西大学 A kind of automatic laser frequency regulator and method
CN107171175A (en) * 2017-07-06 2017-09-15 中国科学院武汉物理与数学研究所 It is a kind of to carry out the Fabry Perot chamber device of multiple laser frequency stabilization simultaneously
CN111954961A (en) * 2018-04-16 2020-11-17 三菱电机株式会社 Optical module
CN111224310A (en) * 2018-11-27 2020-06-02 中国科学院大连化学物理研究所 A frequency locking system and method for a single longitudinal mode mid-infrared OPO laser
CN111555108A (en) * 2020-05-14 2020-08-18 山西大学 High-stability Fabry-Perot cavity device and laser output system applying same

Also Published As

Publication number Publication date
CN103187685B (en) 2016-03-30

Similar Documents

Publication Publication Date Title
CN103187685A (en) Frequency stabilizing device for numerical control feedback semiconductor laser
CN101175352B (en) Numerical control driving method and device for superluminescent light emitting diode
CN103529869B (en) Pressure control device, volume control device, compress control method and flow control methods
CN101604815B (en) A Laser Frequency Stabilization Method for Controlling the Establishment Time of Pulsed Laser
CN103944061B (en) A kind of driving control circuit of semiconductor laser
CN101963818A (en) Method and device for controlling temperature of light source
CN103296568B (en) Pulse fiber laser acoustic optical modulator driving power source
CN104181953B (en) The temperature control system of laser instrument in laser on-line gas analysis instrument
US8800592B2 (en) Flow control device
CN103208738A (en) Semiconductor laser device driving device
Xiong et al. Performance of a flow control valve with pilot switching valve
CN109842290A (en) A kind of high pressure bleeder circuit, charge pump circuit and NOR FLASH
CN109412004A (en) A kind of Gaussian ASE light source
CN101272036B (en) A small digitally controlled multi-wavelength integrated laser
CN105843285A (en) Laser driver circuit having constant wavelength and power
CN103776465B (en) A kind of optic fiber gyroscope graduation factor fast and stable method
CN115268258A (en) A kind of semiconductor laser temperature control method, system, equipment and medium
CN203826767U (en) Drive and control circuit of semiconductor laser
CN104656706B (en) A kind of modified thermoelectric (al) cooler control method
CN109256674A (en) A kind of small-sized driving circuit of semiconductor laser of Information technical field application
CN105375330A (en) In-fiber whispering gallery filter-based ultra-narrow line width semiconductor laser device
CN109194326A (en) A kind of circuit improving linear stabilized power supply power supply rejection ratio
CN2569375Y (en) New thermal stable chamber
CN106370395B (en) Semiconductor laser light source body optimum temperature detection method
CN204140866U (en) A kind of seal arrangement based on cavity ring down spectroscopy technology

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160330

Termination date: 20210221

CF01 Termination of patent right due to non-payment of annual fee